JP3201473B2 - Optimal focus position measuring method and focus position measuring mask - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring an optimum focus position of a projection exposure apparatus used for semiconductor manufacturing and the like, and a focus position measuring mask used for measuring the optimum focus position.

[0002]

2. Description of the Related Art In a photolithography process of a semiconductor process, a resist pattern is formed by projecting and exposing a fine pattern formed on a reticle onto a wafer having a resist film formed on the surface. For the projection exposure at this time, a projection exposure apparatus such as a stepper exposure apparatus that transfers a reticle pattern several times the original size pattern onto a wafer by a reduction projection optical system is used.

FIG. 6 is a schematic configuration diagram of the stepper exposure apparatus. This stepper exposure apparatus includes an illumination system 100
Illuminates the reticle 102 via the condenser lens 101, and the reticle pattern image obtained by the illumination is reduced and projected onto the wafer 104 on the XY stage 105 via the reduction projection lens 103. It has become.

In the projection exposure apparatus as described above, it is necessary to arrange the wafer 104 such that the exposure surface is at the optimum focus position of the reduction projection lens 103. Therefore, before transferring the reticle pattern onto the wafer 104, it is necessary to find the optimum focus position of the reduction projection lens 103. The optimum focus position of the reduction projection lens can be obtained as follows.

The wafer 104 is moved stepwise at predetermined intervals along the optical axis direction near the focus position of the reduction projection lens 103, and is formed on a focus measurement reticle (focus measurement mask) for each movement. Is transferred to separate areas on the wafer by constant exposure.
Then, the resist pattern obtained by each exposure transfer is observed using an optical microscope or an SEM device. When exposure transfer is performed while moving the wafer, an accurate resist pattern with a small amount of dimensional variation as shown in FIG. 7A can be obtained at the optimum focus position, and as shown in FIG. 7B at the defocus position. A resist pattern in which such an edge portion is broken can be obtained. Therefore, FIG.
By finding the exposure position where an accurate resist pattern as shown in FIG. 9A is obtained, the optimum focus position of the reduction projection lens 103 can be known.

[0006]

However, in the above-mentioned conventional optimal focus position measuring method, since the observer visually determines whether or not the resist pattern is accurately formed, accurate measurement is difficult. And it was troublesome.

As a method that does not involve the visual judgment of the observer, there is a method of taking an image of a resist pattern and measuring the dimensional variation of the pattern based on the imaged data. However, in the case of such a method, it is necessary to take an image of each of the resist patterns exposed and transferred, and perform image processing such as extracting a pattern edge from the imaged data. was there.

An object of the present invention is to provide a method capable of simply and accurately measuring an optimum focus position without intervention of a visual judgment of an observer. Another object of the present invention is to provide a focus position measuring mask used for the optimum focus position measurement.

[0009]

In order to achieve the above object, a first optimum focus position measuring method according to the present invention is directed to a projection exposure apparatus for exposing and transferring a desired mask pattern onto a wafer by using a projection optical system. In the method of measuring an optimum focus position, a defocus position of the projection optical system
And second patterns having a pattern width that allows exposure transfer at
Are provided in parallel, between these patterns,
At the defocus position of the projection optical system, using a focus position measurement mask provided in parallel with an isolated pattern having a pattern width that is not exposed and transferred, the wafer is placed at predetermined intervals along the optical axis direction of the projection optical system. It is moved stepwise, and the pattern image of the focus position measuring mask is fixedly exposed and transferred to a separate area on the wafer for each movement, and for each of the resist patterns exposed and transferred for each movement, a laser is used. Irradiating light to detect diffracted light or scattered light from the pattern edge, and based on the light detection result, a resist pattern corresponding to the isolated pattern
In the wafer movement section where the pattern is formed,
Resist pattern corresponding to the turn and the first or
Between the resist pattern corresponding to the second pattern and the first
Of the resist corresponding to the isolated pattern
The wafer movement section where no pattern was formed.
A register corresponding to the first and second patterns.
Between the two patterns as the second interval,
Intermediate position of the wafer movement section from which the first interval was determined
Is the optimal focus position .

[0010]

A second optimum focus position measuring method according to the present invention is a method for measuring an optimum focus position of a projection exposure apparatus for exposing and transferring a desired mask pattern onto a wafer using a projection optical system. The first to third patterns having a pattern width capable of exposing and transferring at the defocus position and the isolated pattern having a pattern width not exposing and transferring at the defocus position of the projection optical system are formed. The second pattern and the third pattern are respectively provided at the same interval on both sides along the pattern, and the isolated pattern is the first or the second pattern between the first pattern and the second pattern. Second
Using a focus position measurement mask provided along the pattern, the wafer is moved stepwise at predetermined intervals along the optical axis direction of the projection optical system, and the focus position measurement The pattern image of the mask is fixedly exposed and transferred to separate areas on the wafer, and for each of the resist patterns that have been exposed and transferred for each of the movements,
Irradiating laser light to detect diffracted light or scattered light from the pattern edge, and based on the light detection result, from the edges on both sides of the resist pattern corresponding to the first pattern to the nearest resist pattern edge. An interval is obtained, a wafer movement section in which a resist pattern corresponding to the isolated pattern is formed is obtained based on a change in a difference between these intervals, and a middle position of the section is set as the optimum focus position.

A first focus position measuring mask according to the present invention is a focus position measuring mask for measuring an optimum focus position of a projection exposure apparatus for exposing and transferring a desired mask pattern onto a wafer by using a projection optical system. The exposure transfer at the defocus position of the projection optical system
The first and second patterns having a possible pattern width are flat.
And at least one isolated pattern having a pattern width that is not exposed and transferred at the defocus position of the projection optical system between these patterns .
Is formed in parallel with the above pattern .

In the second focus position measuring mask of the present invention, a desired mask pattern is projected onto a wafer by using a projection optical system.
Optimum focus position of the projection exposure apparatus that transfers exposure on the wafer
This is a focus position measurement mask for measuring the position.
Exposure transfer at the defocus position of the projection optical system
First to third patterns having a possible pattern width;
Exposure is not transferred at the defocus position of the projection optical system
At least one isolated pattern having a pattern width is formed
Along the first pattern on both sides thereof.
The second pattern and the third pattern have the same interval.
And the first pattern and the second pattern
Between the first and second patterns.
Characterized by being provided along the axis .

(Operation) In the present invention as described above, the pattern width of the isolated pattern formed on the focus position measuring mask is a pattern width that is not exposed and transferred at the defocus position of the projection optical system. When the mask pattern image is exposed and transferred, a resist pattern corresponding to an isolated pattern is formed only near the optimum focus position of the projection optical system, and a resist pattern corresponding to the isolated pattern is not formed at other defocus positions. Therefore, by detecting a section in which a resist pattern corresponding to an isolated pattern is formed, a section near the optimum focus position can be known, and by determining the middle of the section, the optimum focus position of the projection optical system can be determined. You can know.

Further, in the present invention, diffracted light or scattered light from a pattern edge is detected, and a wafer moving section in which a resist pattern corresponding to an isolated pattern is formed is obtained based on the light detection result. Therefore, the conventional visual judgment of the observer does not intervene. In addition, since there is no need to perform image processing such as extracting a pattern edge from the image data, there is no problem such as a long measurement time.

[0016]

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 shows an example of a pattern of a focus position measuring mask used in the optimum focus position measuring method of the present invention. The pattern of the focus position measuring mask includes a substantially rectangular inner frame 1, an outer frame 2 provided so as to surround the inner frame 1 along the outer periphery thereof, and an inner frame 1.
, An isolated line 3a having a predetermined width provided between
3b. The isolated lines 3a and 3b are provided in the vertical direction and the horizontal direction, respectively, along the outer periphery of the inner frame 1 (or the inner periphery of the outer frame 2). That is, the isolated lines 3a and 3b
Are arranged to intersect at substantially right angles in the longitudinal direction.

Hereinafter, a method of measuring the optimum focus position of the projection exposure apparatus as shown in FIG. 6 using the above-described focus position measuring mask will be described.

The above-mentioned mask for measuring the focus position is set in place of the reticle 102, and the wafer 104 coated with the resist on the surface is stepped at predetermined intervals along the optical axis direction near the focus position of the reduction projection lens 103. Then, the pattern formed on the focus position measuring mask for each movement is actually exposed to a constant area on a separate area on the wafer. After exposure, the wafer is developed to form a resist pattern.

Then, it is determined at which stage of the resist pattern that has been exposed and transferred as described above, the exposed pattern is at the optimum focus position. For the determination of the optimum focus position, the following device shown in FIG. 2 is used.

The apparatus used to determine the optimum focus position is a wafer 14 on which the resist pattern is formed.
Is fixed, a laser light source 11 that illuminates the wafer 14 at a predetermined angle, a photodetector 12 that detects diffracted or scattered light from a pattern edge of the wafer 14, and an XY stage 10 And a control / arithmetic processing unit 13 for measuring the pattern interval of each resist pattern exposed and transferred onto the wafer 14 based on the output of the light receiver 12 and determining the optimum focus position from the measurement result. Consists of

In the above-mentioned optimal focus position determining apparatus, the control / arithmetic processing unit 13 sets the laser spot on the wafer 14
The movement of the XY stage 10 is controlled so as to pass through each of the above resist patterns at a constant speed in a constant direction, and the interval between pattern edges in each resist pattern is measured based on the output of the light receiver 12.

FIG. 3A shows an example of the output of the light receiver 12 when the resist pattern exposed and transferred at the optimum focus position is measured, and the light receiver 12 when the resist pattern exposed and transferred at the defocus position is measured. FIG. 3B shows an output example of No. 12. At the optimum focus position, an isolated pattern is formed together with the inner and outer frame patterns.
, An edge of an isolated pattern as shown in FIG. On the other hand, at the defocus position, the portion where the isolated pattern has been exposed and transferred has a smaller pattern size as the focus deviates (see FIG. 7B), and finally disappears. Therefore, as shown in FIG. 3B, an edge of a clear isolated pattern as shown in FIG. 3A appears in the output of the light receiver 12 when the resist pattern transferred and exposed at the defocus position is measured. Absent.

The control / arithmetic processing unit 13 determines the optimum focus position based on the difference between the outputs of the light receiver 12 as described above. Specifically, the control / arithmetic processing unit 13 determines the optimum focus position as follows.

When the output result as shown in FIG. 3A is obtained, the interval b from the inner edge of the isolated pattern to the pattern edge of the inner frame (this corresponds to the interval B shown in FIG. 1). ) And an interval a from the inner frame pattern edge to the inner edge of the outer frame pattern (this corresponds to the interval A shown in FIG. 1), and the shift amount (ab) is calculated. On the other hand, when an output result that does not include the edge of the isolated pattern as shown in FIG. 3B is obtained, the interval b from the inner edge of the outer frame pattern to the pattern edge of the inner frame (this is shown in FIG. 1) and an interval a from the inner frame pattern edge to the inner edge of the outer frame pattern (this corresponds to the interval A shown in FIG. 1), and the deviation amount thereof ( a-b) is calculated. Here, the inside edge portion of the isolated pattern and the inside edge portion of the outer frame pattern are given by 50% slices.

FIG. 4 shows the relationship between the shift amount (ab) calculated for each exposure-transferred resist pattern and the focus position. In this characteristic curve, a state where the isolated pattern edge is not detected is changed from a state where the isolated pattern edge is detected to a state where the isolated pattern edge is detected at the focus position F1.
In this state, the isolated pattern edge is not detected again at the focus position F2. The control / arithmetic processing unit 13 calculates an intermediate position between the sections F1 and F2 of the graph where the isolated pattern edge is detected as the optimum focus position.

Based on the optimum focus position calculated by the control / arithmetic processing unit 13 as described above, the projection exposure apparatus is set so that the exposure surface of the wafer comes to the optimum focus position of the reduction projection lens.

In the above description, the optimum focus position is calculated based on the shift amount (ab).
The optimum focus position can also be calculated based on the difference between the intervals b in the state where the isolated pattern edge is detected. Alternatively, the optimum focus position can be calculated simply by detecting the section where the resist pattern corresponding to the isolated pattern is formed, and obtaining the middle of the section.

The focus position measuring mask is not limited to the pattern shown in FIG. For example, the patterns of the inner frame and the outer frame may have a pattern width that allows exposure and transfer at the defocus position of the projection optical system. It is sufficient if the pattern width is a width that can be detected by the above-mentioned method and the pattern width is not exposed and transferred at the defocus position of the projection optical system. . For example, the focus position measuring mask has at least one isolated pattern having a pattern width that is not exposed and transferred at the defocus position of the projection optical system.
If one is formed, the optimum focus position can be calculated by detecting the resist pattern corresponding to the isolated pattern. As an example of the focus position measuring mask, FIG. 5 shows a line-and-space pattern formed so as to surround the inner frame with a plurality of isolated patterns along the outer periphery thereof.

[0030]

As described above, according to the present invention,
Since the optimum focus position can be obtained without the intervention of the visual judgment of the observer, the measurement can be performed more accurately.

Further, according to the present invention, complicated processing such as extraction of an edge pattern from image data is not performed.
Since the resist pattern edge is detected by detecting the diffracted light or the scattered light from the resist pattern edge, the optimum focus position can be easily obtained.

[Brief description of the drawings]

FIG. 1 shows an example of a pattern of a focus position measuring mask used in an optimum focus position measuring method of the present invention.

FIG. 2 is a block diagram illustrating a configuration example of an optimum focus position determination device to which the optimum focus position measurement method of the present invention is applied.

3A and 3B are diagrams illustrating an example of an output of a light receiver of the optimum focus position determination device illustrated in FIG. 2; FIG. 3A illustrates an output example when a resist pattern exposed and transferred at an optimum focus position is measured; () Shows an output example when the resist pattern exposed and transferred at the defocus position is measured.

FIG. 4 is a diagram showing a relationship between a shift amount (ab) calculated with respect to a resist pattern subjected to exposure transfer and a focus position.

FIG. 5 is a view showing a focus position measuring mask of a line and space pattern.

FIG. 6 is a schematic configuration diagram of a general stepper exposure apparatus.

7A is a diagram illustrating a shape of a resist pattern exposed and transferred at an optimum focus position, and FIG. 7B is a diagram illustrating a shape of a resist pattern exposed and transferred at a defocus position.

[Explanation of symbols]

 1 inner frame 2 outer frame 3a, 3b isolated pattern

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 21/027 G03F 7/20

Claims (4)

(57) [Claims] 1. A method for measuring an optimum focus position of a projection exposure apparatus for exposing and transferring a desired mask pattern onto a wafer using a projection optical system, wherein exposure and transfer at a defocus position of the projection optical system are possible. Focus position measurement in which first and second patterns having a pattern width are provided in parallel, and an isolated pattern having a pattern width that is not exposed and transferred at the defocus position of the projection optical system is provided in parallel between the first and second patterns. Using a mask for, moving the wafer stepwise at predetermined intervals along the optical axis direction of the projection optical system, for each movement separate the pattern image of the focus position measurement mask on the wafer The resist pattern is transferred to the area by constant exposure, and the resist pattern exposed and transferred at each of the movements is irradiated with a laser beam to perform pattern etching. Based on the light detection result, a resist pattern corresponding to the isolated pattern is detected by detecting a diffracted light or a scattered light from the wafer. Alternatively, a distance between the resist pattern corresponding to the second pattern and the resist pattern corresponding to the second pattern are obtained as a first interval.
The distance between the resist patterns corresponding to the first and second patterns is determined as a second interval, and an intermediate position of the wafer moving section where the first interval is determined is set as the optimum focus position. Optimal focus position measurement method. 2. A method of measuring an optimum focus position of a projection exposure apparatus for exposing and transferring a desired mask pattern onto a wafer by using a projection optical system, wherein exposure and transfer are possible at a defocus position of the projection optical system. First to third patterns having a pattern width and an isolated pattern having a pattern width that is not exposed and transferred at the defocus position of the projection optical system are formed, and the second pattern is formed on both sides of the first pattern along the first pattern. And the third pattern are provided at the same interval, respectively, and the first pattern
Using a focus position measuring mask in which the isolated pattern is provided along the first or second pattern between the pattern and the second pattern, and moving the wafer in the optical axis direction of the projection optical system. A stepwise movement at predetermined intervals along the pattern, the pattern image of the focus position measurement mask is transferred to a separate area on the wafer by constant exposure transfer at each movement, and the resist transferred at each movement is exposed and transferred. For each of the patterns, a laser beam is irradiated to detect diffracted light or scattered light from the pattern edge, and based on the light detection result, each edge is closest to both edges of the resist pattern corresponding to the first pattern. An interval to the resist pattern edge is determined, and a resist pattern corresponding to the isolated pattern is formed based on a change in the difference between these intervals. Wafer seek movement section, the optimum focus position measurement method characterized by the intermediate position between the compartment and the optimum focus position was. 3. A focus position measuring mask for measuring an optimal focus position of a projection exposure apparatus for exposing and transferring a desired mask pattern onto a wafer using a projection optical system , wherein the defocus of the projection optical system is performed. Exposure transfer at position
1st and 2nd patterns with different pattern widths
A small pattern width between these patterns that is not exposed and transferred at the defocus position of the projection optical system.
At least one isolated pattern corresponds to the first and second patterns.
A focus position measuring mask formed parallel to the turn . 4. A projection optical system for projecting a desired mask pattern.
Of the projection exposure equipment that transfers and transfers the exposure on the wafer
Focus position measurement mass for measuring focus position
A click, can be exposed and transferred at a defocus position of the projection optical system
First to third patterns having different pattern widths;
The pattern that is not exposed and transferred at the defocus position of the shadow optical system
At least one isolated pattern having a width
Is, the isolated pattern between the said on both sides along the first pattern and the second pattern, the third pattern is provided at the same intervals respectively, the first pattern and the second pattern Is provided along the first or second pattern.