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JP3109919B2 - Method for manufacturing resin-encapsulated semiconductor device and mold - Google Patents

Method for manufacturing resin-encapsulated semiconductor device and mold

Info

Publication number
JP3109919B2
JP3109919B2 JP04248753A JP24875392A JP3109919B2 JP 3109919 B2 JP3109919 B2 JP 3109919B2 JP 04248753 A JP04248753 A JP 04248753A JP 24875392 A JP24875392 A JP 24875392A JP 3109919 B2 JP3109919 B2 JP 3109919B2
Authority
JP
Japan
Prior art keywords
resin
mold
semiconductor device
lead frame
external lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP04248753A
Other languages
Japanese (ja)
Other versions
JPH0677269A (en
Inventor
広治 古里
高弘 大西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP04248753A priority Critical patent/JP3109919B2/en
Publication of JPH0677269A publication Critical patent/JPH0677269A/en
Application granted granted Critical
Publication of JP3109919B2 publication Critical patent/JP3109919B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、樹脂モ−ルド金型によ
り半導体組立体を封止する樹脂封止型半導体装置の製造
方法及びその金型に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a resin-encapsulated semiconductor device for encapsulating a semiconductor assembly with a resin-molded die, and a die thereof.

【0002】[0002]

【従来の技術】従来、整流ダイオ−ド、トランジスタ、
サイリスタ、IC等の半導体チップ(2)を金属支持板
に載置し、接続子、その他の部品と共に、半導体組立体
を構成し、その半導体組立体をエポキシ樹脂等で封止
し、外部に複数のリ−ド片を導出するようにした樹脂封
止型半導体装置が知られている。
2. Description of the Related Art Conventionally, rectifier diodes, transistors,
A semiconductor chip (2) such as a thyristor or an IC is placed on a metal support plate, and a semiconductor assembly is formed together with connectors and other components. The semiconductor assembly is sealed with an epoxy resin or the like, and a plurality of semiconductor assemblies are externally mounted. There is known a resin-sealed semiconductor device in which a lead piece is led out.

【0003】又、それらを複数個、多量に製造する手段
として、外部リ−ド片、内部リ−ド片、金属支持板等を
フレ−ムに結合したリ−ドフレ−ムにより半導体組立体
及び外部リ−ドを構成し、又、樹脂モ−ルド金型を用い
て、トランスファモ−ルド方式等により樹脂封止し、そ
の後、個々の半導体装置に分離するごとく、リ−ドフレ
−ムの不要部分を切除する製造方法が知られている。
As means for mass-producing a plurality of such components, a semiconductor assembly and a semiconductor assembly using a lead frame in which an external lead piece, an internal lead piece, a metal support plate and the like are connected to a frame. An external lead is formed, and resin molding is performed by a transfer mold method or the like using a resin mold, and thereafter, no separate lead frame is required as if the individual semiconductor devices were separated. Manufacturing methods for cutting parts are known.

【0004】図1は、従来のリ−ドフレ−ムによる樹脂
封止型半導体装置の組立構造図で、(a)はシングルイ
ンライン型、(b)はデュアルインライン型である。1
はリ−ドフレ−ム、2は外部リ−ド片、3はタイバ−、
4はフレ−ム、5は封止樹脂である。封止樹脂5の内部
には、図示しないが、リ−ドフレ−ム1の金属支持板や
接続子等により半導体組立体が構成され、収容されてい
る。図1(a)(b)共に、樹脂モ−ルド直後の半導体
装置1個分を示し、通常、多数個がリ−ドフレ−ム1に連
結されている。
FIGS. 1A and 1B are assembly structure diagrams of a conventional resin-encapsulated semiconductor device using a lead frame, wherein FIG. 1A shows a single-in-line type and FIG. 1B shows a dual-in-line type. 1
Is a lead frame, 2 is an external lead piece, 3 is a tie bar,
4 is a frame, and 5 is a sealing resin. Although not shown, a semiconductor assembly is formed and accommodated in the sealing resin 5 by a metal support plate, a connector and the like of the lead frame 1. 1 (a) and 1 (b) each show one semiconductor device immediately after resin molding, and usually a large number of semiconductor devices are connected to the lead frame 1. FIG.

【0005】タイバ−3は、外部リ−ド片2の根元、即
ち、封止樹脂5の近傍に設けられ、樹脂注入時の樹脂流出
を防止する役割をする。しかし、樹脂封止後において、タ
イバ−3は不必要部分であり、切断し、除去される。
The tie bar 3 is provided at the base of the external lead piece 2, that is, in the vicinity of the sealing resin 5, and serves to prevent the resin from flowing out when the resin is injected. However, after resin sealing, tie bar-3 is an unnecessary part, and is cut and removed.

【0006】図2は、リ−ドフレ−ム1のタイバ−3及
びフレ−ム4を除去した後の構造図で、図1と同一符号
は同等部分をあらわす。タイバ−3は封止樹脂5の近傍
で切断するため、封止樹脂5に機械的ストレスがかか
り、クラック等のダメ−ジを残す可能性がある。
FIG. 2 is a structural view of the lead frame 1 after the tie bar 3 and the frame 4 have been removed. The same reference numerals as those in FIG. 1 denote the same parts. Since the tie bar 3 is cut in the vicinity of the sealing resin 5, a mechanical stress is applied to the sealing resin 5, and damage such as cracks may be left.

【0007】又、図3は、外部リ−ド片のタイバ−切断
部の拡大図であり、切断部に若干(3)の段差を発生す
ることは避けられない。なお、図3のように、タイバ−
切断部が外部リ−ド片に対し、凸部をなすもの以外に、
凹部をなす段差もある。
FIG. 3 is an enlarged view of a tie-cut portion of the external lead piece, and it is inevitable that a slight (3) step is generated in the cut portion. In addition, as shown in FIG.
In addition to the one where the cut part is a convex part to the external lead piece,
There are also steps forming concave portions.

【0008】[0008]

【発明が解決しようとする課題】タイバ−の切断時に、
封止樹脂にクラック等のダメ−ジを残す可能性のあるこ
と、及び、外部リ−ド片を直線状に切断できず、段差を
生じることが解決すべき問題点である。
When the tie bar is cut,
Problems to be solved are that damage such as cracks may be left in the sealing resin, and that the external lead piece cannot be cut linearly and a step occurs.

【0009】[0009]

【課題を解決するための手段】本発明は、(1)板状、
もしくは棒状の速硬化型熱硬化性樹脂材を樹脂モ−ルド
金型の外部リ−ド片導出部の空所近傍となるように上型
又は下型に設けた凹部に装着し、樹脂注入前に、加熱さ
れた上型及び下型の結合により、速硬化型熱硬化性樹脂
材が各外部リ−ド片を包囲して、樹脂注入時の樹脂の流
出を防止する製造方法。(2)前記(1)項において、
上型又は下型に設けた凹部への速硬化型熱硬化性樹脂材
の装着を、金型へのリ−ドフレ−ムのセット時に行うこ
と。(3)前記(1)項又は(2)項の製造方法に用い
る金型。これらにより、問題点の原因をなすタイバ−の
ないリ−ドフレ−ムにより製造することができ、信頼性
が高く、外観の良好な樹脂封止型半導体装置を得る。
Means for Solving the Problems The present invention provides (1) a plate shape,
Alternatively, a rod-shaped fast-curing thermosetting resin material is mounted in a recess provided in the upper or lower die so as to be in the vicinity of a space of the external lead piece lead-out portion of the resin mold and before the resin injection. In addition, a manufacturing method in which a fast-curing thermosetting resin material surrounds each external lead piece by bonding the heated upper mold and lower mold to prevent the resin from flowing out during resin injection. (2) In the above item (1),
The mounting of the quick-curing thermosetting resin material into the concave portion provided in the upper mold or the lower mold at the time of setting the lead frame to the mold. (3) A mold used in the production method according to the above (1) or (2). As a result, a resin-encapsulated semiconductor device having high reliability and good appearance can be manufactured by using a lead frame having no tie which causes a problem.

【0010】[0010]

【実施例】図4は、本発明の実施例による樹脂封止型半
導体装置の組立構造図で(a)はシングルインライン
型、(b)はデュアルインライン型である。図1と同一
符号は同等部分を示し、図1と同様に、樹脂モ−ルド直
後、リ−ドフレ−ム1切断前の半導体装置1個分を図示
している。図4では図1のように、タイバ−3が存在し
ないことに特徴がある。
4A and 4B show an assembly structure of a resin-sealed semiconductor device according to an embodiment of the present invention. FIG. 4A shows a single-in-line type and FIG. 4B shows a dual-in-line type. The same reference numerals as those in FIG. 1 indicate the same parts, and similarly to FIG. 1, one semiconductor device immediately after resin molding and before cutting the lead frame 1 is illustrated. FIG. 4 is characterized in that tie bar-3 does not exist as shown in FIG.

【0011】図5は、本発明の製造方法を説明する要部
工程図であり、(a)は上型と下(4)型の結合前の工
程図、(b)は(a)のA−A′断面図、(c)は上型
と下型の結合時の工程図、(d)は(c)のA−A′断
面図である。図において、6は半導体チップ、7は接続
子、8は樹脂モ−ルド金型の上型、9は下型、10は速
硬化型熱硬化性樹脂材、11は金型の空所、12は金型
の外部リ−ド片導出部、13は下型9の凹部である。
FIGS. 5A and 5B are main process charts for explaining the manufacturing method of the present invention. FIG. 5A is a process chart before the upper mold and the lower mold (4) are joined, and FIG. FIG. 4C is a cross-sectional view taken along the line A-A ′, FIG. 4C is a process diagram when the upper die and the lower die are joined, and FIG. In the figure, 6 is a semiconductor chip, 7 is a connector, 8 is an upper mold of a resin mold, 9 is a lower mold, 10 is a thermosetting thermosetting resin material, 11 is a space in the mold, 12 Is an external lead piece lead-out portion of the die, and 13 is a concave portion of the lower die 9.

【0012】本発明の樹脂モ−ルド金型は、上型8及び
下型9から成り、又、上型8又は下型9には、速硬化型
熱硬化性樹脂材を装着するため、空所11近傍の外部リ
−ド片導出部12に凹部13を設ける。つまり、従来の
タイバ−の存在するはずの位置近傍の外部リ−ド片導出
部12にまたがって凹部13を形成する。
The resin mold according to the present invention comprises an upper die 8 and a lower die 9. The upper die 8 or the lower die 9 is provided with a quick-curing thermosetting resin material, so that the upper die 8 or the lower die 9 is empty. A recess 13 is provided in the external lead piece lead-out portion 12 near the place 11. That is, the concave portion 13 is formed over the external lead piece lead-out portion 12 near the position where the conventional tie bar should exist.

【0013】速硬化型熱硬化性樹脂材10は、例えば、
エポキシ系、シリコン系、テフロン系等の樹脂の配合や
硬化剤の調整により得るもので、板状、もしくは棒状を
形成する。又、例えば、170℃程度の加熱により急速
に硬化する材料が好ましく、さらに、他の封止樹脂材や
外部リ−ド片との接着性が低く、剥離性が大なることが
望ましい。
The quick-curing thermosetting resin material 10 is, for example,
It is obtained by blending an epoxy-based, silicon-based, or Teflon-based resin or adjusting a curing agent, and forms a plate or a rod. Further, for example, a material which is rapidly cured by heating at about 170 ° C. is preferable, and further, it is desirable that the adhesiveness to other sealing resin materials and external lead pieces is low and the releasability is high.

【0014】図5(a)(b)のように、半導体チップ6、接
続子7等の組立体を構成したリードフレーム1を空所1
1にセットするとき、同時に、速硬化型熱硬化性樹脂材
10を凹部13にセットする。凹部13への樹脂材10
のセットは、リードフレーム1のセットに先立って行
う。
As shown in FIGS. 5 (a) and 5 (b), the lead frame 1 forming an assembly of the semiconductor chip 6, the connector 7, etc.
At the same time, the quick-curing thermosetting resin material 10 is set in the recess 13. Resin material 10 into recess 13
Is performed prior to the setting of the lead frame 1.

【0015】次いで、図5(c)(d)のように、加熱
された上型8及び下型9を結合し、空所11内に図示し
ないゲ−ト口から封止樹脂を注入する。この場合、速硬
化型熱硬化性樹脂材10は、一たん、溶融状態となり、
図5(d)のように、(5)外部リ−ド片2を包囲する
と共に、急速に硬化して、注入樹脂の流出を防止する。
Next, as shown in FIGS. 5 (c) and 5 (d), the heated upper die 8 and lower die 9 are joined, and a sealing resin is injected into the space 11 from a gate opening (not shown). In this case, the quick-curing thermosetting resin material 10 is in a molten state for a moment,
As shown in FIG. 5 (d), (5) the outer lead piece 2 is surrounded and hardened rapidly to prevent the resin from flowing out.

【0016】次いで、封止樹脂の成形後、半導体装置を
金型から取り出す。このとき、外部リ−ド片2に付着し
た樹脂材10を加圧により除去する。なお、付着した樹
脂材10を凹部13側に残すように除去してもよいが、
その場合は、次の成形工程前に除去する工程を必要とす
る。
Next, after molding the sealing resin, the semiconductor device is taken out of the mold. At this time, the resin material 10 attached to the external lead pieces 2 is removed by pressing. Although the attached resin material 10 may be removed so as to remain on the concave portion 13 side,
In that case, a step of removing before the next molding step is required.

【0017】本発明によれば、従来のタイバ−を不要と
するが、切断時に封止樹脂への悪影響を及ぼさない程度
に封止樹脂から離した位置に外部リ−ド片を連結する線
条を設け、製造上、取扱上の便を図るようにするリ−ド
フレ−ムを用いても本発明を実施し得るのは当然であ
る。
According to the present invention, the conventional tie bar is not required, but a wire for connecting the external lead piece to a position separated from the sealing resin so as not to adversely affect the sealing resin at the time of cutting. It is obvious that the present invention can be practiced by using a lead frame for providing convenience in manufacturing and handling.

【0018】本発明の製造方法及び金型によって、タイ
バ−を設けないリ−ドフレ−ムを用いて、外部リ−ド片
部分から注入樹脂の流出がなく、個々の半導体装置への
分離において、封止樹脂への機械的ストレスが小さく、
かつ外部リ−ド片を直線状に形成し得る。
According to the manufacturing method and the mold of the present invention, the lead frame without the tie bar is used to prevent the injected resin from flowing out of the external lead piece portion and to separate the semiconductor devices into individual semiconductor devices. Low mechanical stress on the sealing resin,
In addition, the outer lead piece can be formed linearly.

【0019】樹脂材10の装着は実施例のごとく下型9
の凹部13に限定するものではなく、上型8に凹部を設
けて装着してもよい。又、凹部13は樹脂材10の装着
時に必要とする凹部であり、他の目的のための凹部を凹
部13と対向する側の上型又は下型に設けても本願の範
囲である。さらに、本発明の実施例は本発明の要旨の範
囲で、種々に変形、変換、付加等の変更をなし得るもの
である。
The resin material 10 is mounted on the lower mold 9 as in the embodiment.
The upper die 8 is not limited to the concave portion 13 and may be provided with a concave portion. The concave portion 13 is a concave portion required when the resin material 10 is mounted, and it is within the scope of the present invention to provide a concave portion for another purpose in the upper die or the lower die on the side facing the concave portion 13. Furthermore, the embodiments of the present invention can be variously modified, changed, added, and so forth within the scope of the present invention.

【0020】[0020]

【発明の効果】以上説明のように、信頼性が高く、外観
が良好で、かつ、経済的な樹脂封止型半導体装置の製造
方法及び金型を提供するので、各種個別素子、集積回路
(6)等の半導体装置に利用して、その産業上の効果、
極めて、大なるものである。
As described above, the present invention provides a method of manufacturing a resin-encapsulated semiconductor device having high reliability, good appearance, and economical efficiency, and a die. 6) and the like, and its industrial effects,
Extremely large.

【図面の簡単な説明】[Brief description of the drawings]

【図1】従来のリ−ドフレ−ムによる樹脂封止型半導体
装置の組立構造図で、(a)はシングルインライン型、
(b)はデュアルライン型である。
FIG. 1 is an assembly structure diagram of a conventional resin-encapsulated semiconductor device using a lead frame, wherein FIG.
(B) is a dual line type.

【図2】リ−ドフレ−ムのタイバ−とフレ−ムを除去し
た後の構造図である。
FIG. 2 is a structural view of a lead frame after the tie bar and the frame are removed.

【図3】タイバ−切断部の拡大図である。FIG. 3 is an enlarged view of a tie bar cutting portion.

【図4】本発明の実施例による組立構造図で、(a)は
シングルインライン型、(b)はデュアルインライン型
である。
FIG. 4 is an assembly structure diagram according to an embodiment of the present invention, in which (a) is a single-in-line type and (b) is a dual-in-line type.

【図5】本発明の製造方法を説明する要部工程図で、
(a)は上型と下型の結合前の工程図、(b)は(a)
のA−A′断面図、(c)は上型と下型の結合時の工程
図、(d)は(c)のA−A′断面図である。
FIG. 5 is a main part process drawing explaining the manufacturing method of the present invention,
(A) is a process diagram before joining the upper mold and the lower mold, and (b) is (a)
7A is a sectional view taken along the line AA ′, FIG. 7C is a process diagram when the upper mold and the lower mold are joined, and FIG. 7D is a sectional view taken along the line AA ′ of FIG.

【符号の説明】[Explanation of symbols]

1 リ−ドフレ−ム 2 外部リ−ド片 3 タイバ− 4 フレ−ム 5 封止樹脂 6 半導体チップ 7 接続子 8 樹脂モ−ルド金型の上型 9 樹脂モ−ルド金型の下型 10 速硬化型熱硬化性樹脂材 11 金型の空所 (7) 12 金型の外部リ−ド片導出部 13 金型の凹部 REFERENCE SIGNS LIST 1 lead frame 2 external lead piece 3 tie bar 4 frame 5 sealing resin 6 semiconductor chip 7 connector 8 upper mold of resin mold 9 lower mold of resin mold 10 Fast-curing thermosetting resin material 11 Mold cavity (7) 12 External lead piece lead-out section 13 Mold recess

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 リードフレームに半導体チップを搭載
し、リードフレームと半導体チップは接続子で接続さ
れ、樹脂封止の為の空所を有する上型及び下型から成る
樹脂モールド金型により樹脂封止する樹脂封止型半導体
装置の製造方法において、板状、もしくは棒状の速硬化
型熱効果性樹脂を樹脂モールド金型の外部リード片の空
所近傍となるように上型又は下型の一方又は両方に設け
られた凹部に装着し、樹脂注入時に、加熱された上型及
び下型を結合させて、速硬化型熱硬化性樹脂材が各外部
リード片を包囲した状態で硬化することにより、樹脂注
入時の樹脂の流出を防止するようにしたことを特徴とす
る樹脂封止型半導体装置の製造方法。
1. A semiconductor chip is mounted on a lead frame.
The lead frame and the semiconductor chip are connected by connectors.
Consisting of an upper mold and a lower mold with a space for resin sealing
In a method of manufacturing a resin-encapsulated semiconductor device in which resin is encapsulated by a resin mold , a plate-shaped or rod-shaped fast-curing thermo-effective resin is placed near an empty space of an external lead piece of the resin mold. Provided on one or both of upper and lower molds
Is mounted in the recess, when the resin injection, by by coupling the heated upper and lower molds, fast curing type thermosetting resin material is cured in a state of surrounding each external lead pieces, during resin injection A method for manufacturing a resin-encapsulated semiconductor device, characterized in that the resin is prevented from flowing out.
JP04248753A 1992-08-25 1992-08-25 Method for manufacturing resin-encapsulated semiconductor device and mold Expired - Lifetime JP3109919B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04248753A JP3109919B2 (en) 1992-08-25 1992-08-25 Method for manufacturing resin-encapsulated semiconductor device and mold

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04248753A JP3109919B2 (en) 1992-08-25 1992-08-25 Method for manufacturing resin-encapsulated semiconductor device and mold

Publications (2)

Publication Number Publication Date
JPH0677269A JPH0677269A (en) 1994-03-18
JP3109919B2 true JP3109919B2 (en) 2000-11-20

Family

ID=17182866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04248753A Expired - Lifetime JP3109919B2 (en) 1992-08-25 1992-08-25 Method for manufacturing resin-encapsulated semiconductor device and mold

Country Status (1)

Country Link
JP (1) JP3109919B2 (en)

Also Published As

Publication number Publication date
JPH0677269A (en) 1994-03-18

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