JP3068276B2 - Manufacturing method of non-single crystal tandem solar cell and manufacturing apparatus used therefor - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a non-single-crystal tandem solar cell centering on non-single-crystal silicon and a manufacturing apparatus used for the method.

[0002]

2. Description of the Related Art Non-single-crystal solar cells such as amorphous silicon solar cells are mostly doped with source gases such as silane, disilane, germane, and methane, and doped with diborane, phosphine, and arsine as necessary. Pi is decomposed in a plasma by high frequency power or the like together with gas and deposited on a desired substrate by a so-called glow discharge decomposition method.
It is formed by forming an n-junction. At that time, it is known that in order to obtain high performance, it is necessary to reduce the impurity concentration in the i-layer as much as possible. Since boron and phosphorus for forming the p-layer and the n-layer also deteriorate the performance, recently, a so-called separation formation method in which the p-layer, the i-layer, and the n-layer are formed in dedicated reaction chambers, respectively, is generally used. Has become. Although this separation and formation method can form a solar cell with high conversion efficiency, it also requires a multi-chamber separation type film forming apparatus having a system for transferring each substrate to another reaction chamber in a vacuum after forming each layer and manufacturing. The process is also complicated.

In recent years, however, attention has been paid to a tandem solar cell in which a plurality of pin layers, each of which is expected to have high conversion efficiency and reliability, are replaced with a junction solar cell having a single pin. In order to form this tandem type solar cell, the number of layers to be laminated is at least twice or more, so that if a separation forming method is adopted, there is a problem that an increasingly complicated and expensive apparatus is required (see FIG. 15). ).

[0004]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and is intended to provide a tandem-type solar cell having high conversion efficiency and reliability in a relatively simple process and at a low cost. An object of the present invention is to provide a method of manufacturing a non-single-crystal tandem solar cell manufactured by using the method and a manufacturing apparatus used therefor.

[0005]

The first aspect of the method for producing a non-single-crystal tandem solar cell of the present invention is to reduce the number of non -single-crystal layers.
Multiple pin junctions including at least one layer in series in the film thickness direction
It is a method of manufacturing connected non-single crystal tandem solar cells.
Therefore, at least one pin junction is formed by a single-chamber type film forming apparatus.
Film and at least one of the pin junctions different from the pin junction.
To form two i-layers in the i-chamber of the multi-chamber separable type
A method for producing a non-single-crystal tandem solar cell according to the present invention
The second mode is amorphous silicon or amorphous silicon
Only layers mainly containing alloys of germanium and carbon
The multiple pin junctions composed of
Of non-single-crystal tandem solar cells connected in series
Manufacturing method, wherein at least one of the plurality of pin junctions is
One pin junction is formed using a single-chamber type film forming apparatus
And at least one other pin junction
At least the i-layer can be formed using a multi-chamber separation type film forming apparatus.
Characterized in that the non-single-crystal tandem solar cell of the present invention
The third form of the manufacturing method is amorphous silicon or amorphous silicon.
Layer mainly composed of alloy of copper and germanium or carbon
Only three pin junctions consisting of
Non-single-crystal tandem solar cell connected in series in the thickness direction
A method of manufacturing a pond, wherein each of the pin junctions is
The first pi of the first pin junction and the second pin junction
Forming a layer adjacent to the n-junction using a single-chamber type film forming apparatus
And another layer of the second pin junction and the remaining one pi
The feature is that the n-junction is formed using a multi-chamber separation type film forming apparatus.
As a feature, the method of manufacturing the non-single-crystal tandem solar cell of the present invention
The fourth mode is to use amorphous silicon or amorphous silicon.
Is only the layer mainly composed of germanium or carbon alloy?
The three pin junctions composed of
Of non-single-crystal tandem solar cells connected in series
Wherein each of the pin junctions is placed first from the light incident direction.
Use a single-chamber type film forming apparatus for the pin junction and the second pin junction
And another pin junction is formed by a multi-chamber separation type film forming apparatus.
It is characterized by being formed using a device.

A first embodiment of a non-single-crystal tandem solar cell manufacturing apparatus according to the present invention includes a main controller, a source gas,
Supply device, gas flow control device, transfer device and substrate holding
A plurality of reaction chambers each having an apparatus and a reaction apparatus;
Non-single crystal tandem type consisting of a knot device and a gas discharge device
Solar cell manufacturing equipment, controlled by the main controller
In one reaction chamber, a pin junction is formed,
at least one i-layer of a pin junction different from the in junction
It is formed in a single reaction chamber separate from the reaction chamber.
Characterized in that the non-single-crystal tandem solar cell of the present invention
The second embodiment of the manufacturing apparatus includes a main controller, a source gas supply device,
Device, gas flow control device, transfer device and substrate holding device
A plurality of reaction chambers having a reaction device, and a gas pressure adjusting device
Non-single crystal tandem solar cell
Pond manufacturing equipment, less control by main controller
A pin / pin junction is formed in one reaction chamber
It is characterized in Rukoto such is. Non-single-crystal crystal of the present invention
In the apparatus for manufacturing an Ndem solar cell, the reaction apparatus
May be a glow discharge decomposition chemical vapor deposition apparatus,
Photodecomposition chemical vapor deposition equipment and glow discharge decomposition chemical vapor deposition equipment
It may be a combination of the devices.

[0007]

Functions and Examples A non-single-crystal semiconductor has a large absorption coefficient as compared with a crystalline semiconductor, but has a low ability to transport electrons and holes, which limits the photoelectric conversion efficiency of a solar cell. . Therefore, when the collection length of the carrier is reduced due to mixing of impurities into the i-layer, which causes deterioration of the film quality, the performance is greatly reduced. On the other hand, in a tandem solar cell, each pin layer is repeatedly formed so as to have a structure in which a plurality of junctions are connected in series. However, the i-layer close to the light incident side is a normal single-junction solar cell. In this case, the thickness of the film is designed to be considerably smaller than that of the film. This is because the electric currents generated at the respective junctions need to be substantially equal in order to electrically connect the respective junctions in series. I of the first junction
When the layer is thickened, light is absorbed at the first junction and the current generated at the second junction becomes too small. In a two-layer tandem solar cell using only amorphous silicon, when the i-layer thickness of the second junction from the incident side is 400 nm, the optimum thickness of the i-layer of the first junction is about 100 nm.

This tendency is basically the same in the case of a three-layer tandem type solar cell. Compared with the film thickness of the i-layer used for the third-stage junction, the i-layer of the first-stage and second-stage junctions It is necessary to reduce the thickness of the layer.

In this case, the internal electric field of the i-layer is larger than that of the single-junction solar cell due to its small thickness, and the film quality of the i-layer itself is also different from that of the i-layer or tandem junction of the single-junction solar cell. May not need to be as high in quality as the i-layer that makes up the junction furthest from the light incident side of the solar cell.

From such a viewpoint, a single-junction solar cell is formed by changing the thickness of the i-layer to form a single-chamber solar cell, a two-chamber solar cell and a three-chamber solar cell.
They were formed by three kinds of film forming methods of chamber film formation, and their conversion efficiencies were examined.

Film forming method 1 A glass substrate with SnO ₂ was placed in a parallel plate capacitively coupled glow discharge decomposition film forming chamber for forming a p-layer, and the heater temperature was 200 ° C.
In after _{heating, SiH 4 5sccm, CH 3 15sccm} , B 2 H 6 (1000p
pmH ₂ ) 15 sccm and H ₂ 50 sccm were introduced, and the reaction pressure was 1.0 torr
r, A p layer was formed to a thickness of 25 nm with an RF power of 50 mW / cm ² . Then, after exhausting the residual gas, the chamber was moved to an adjacent parallel-plate capacitively coupled glow discharge decomposition film formation chamber for forming an i-layer, and 10 sccm of SiH ₄ was introduced at a heater temperature of 200 ° C., and a reaction pressure of 0.3 torr.
r, an i layer was formed to a thickness of 500 nm with an RF power of 50 mW / cm ² .
After that, the residual gas was exhausted, and moved to an adjacent parallel-plate capacitively coupled glow discharge decomposition film forming chamber for forming an n-layer, at a heater temperature of 200 ° C., SiH ₄ 5 sccm, PH ₃ (1000 ppmH ₂ ) 100 sccm,
H ₂ 200sccm was introduced, reaction pressure 1.0torr, RF power 5
An n layer was formed to a thickness of 30 nm at 0 mW / cm ² . Thereafter, the sample was taken out of the film forming apparatus, and a 1 cm square Ag layer was formed by electron beam evaporation to obtain a solar cell.

Film forming method 2 A solar cell was formed in the same manner as in film forming method 1 except that the thickness of the i-layer was 100 nm.

Film-forming method 3 A glass substrate with SnO _{2 was} placed in a single-chamber parallel-plate capacitively-coupled glow discharge decomposition film-forming chamber, heated at a heater temperature of 200 ° C., and then SiH ₄ 5 sccm, CH ₃ 15 sccm, B ₂ H ₆ (1000ppmH ₂ )
15 sccm, H ₂ 50 sccm was introduced, reaction pressure 1.0 torr, RF
A 25 nm p-layer was formed at a power of 50 mW / cm ² . Subsequently, after evacuating the residual gas, SiH ₄ 10sccm at the same heater temperature.
At a reaction pressure of 0.3 torr and RF power of 50 mW / cm ²
A layer was formed to a thickness of 500 nm. Subsequently, after exhausting the residual gas, SiH ₄ 5sccm PH ₃ (1000 ppm
H ₂ ) 100 sccm, H ₂ 200 sccm were introduced, and the reaction pressure was 1.0 torr,
A 30 nm film was formed at an RF power of 50 mW / cm ² . Thereafter, the sample was taken out of the film forming apparatus, and a 1 cm square Ag layer was formed by electron beam evaporation to obtain a solar cell.

Film forming method 4 A solar cell was formed in the same manner as in film forming method 3 except that the thickness of the i-layer was 100 nm.

Film forming method 5 A glass substrate with SnO ₂ was placed in a parallel plate capacitively coupled glow discharge decomposition film forming chamber for forming a pn layer, and the heater temperature was 200 ° C.
In after _{heating, SiH 4 5sccm, CH 3 15sccm} , B 2 H 6 (1000p
pmH ₂ ) 15 sccm and H ₂ 50 sccm were introduced, and the reaction pressure was 1.0 torr
r, A p layer was formed to a thickness of 25 nm with an RF power of 50 mW / cm ² . Then, after exhausting the residual gas, the chamber was moved to an adjacent parallel-plate capacitively coupled glow discharge decomposition film formation chamber for forming an i-layer, and 10 sccm of SiH ₄ was introduced at a heater temperature of 200 ° C., and a reaction pressure of 0.3 torr.
r, an i layer was formed to a thickness of 500 nm with an RF power of 50 mW / cm ² .
After that, the residual gas was exhausted, and moved again to the parallel-plate capacitively coupled glow discharge decomposition film forming chamber for forming the pn layer, and at a heater temperature of 200 ° C., SiH ₄ 5 sccm, PH ₃ (1000 ppmH ₂ ) 100 sccm,
H ₂ 200sccm was introduced, reaction pressure 1.0torr, RF power 50
An n layer was formed to a thickness of 30 nm at mW / cm ² . Thereafter, the sample was taken out of the film forming apparatus, and a 1 cm square Ag layer was formed by electron beam evaporation to obtain a solar cell.

Film forming method 6 A solar cell was formed in the same manner as in film forming method 5, except that the thickness of the i-layer was changed to 100 nm.

The conversion efficiency of a single-junction solar cell formed by the above-described six types of film formation methods was AM-1, 100 mW / cm ²
Was measured under simulated sunlight. Table 1 shows the results.

[0018]

[Table 1]

As can be seen from Table 1, the i-layer thickness is 500 n
In the case of m, the film forming method 1 formed by the separation type film forming apparatus is superior to the film forming method 3 formed by the single chamber film forming apparatus, and the conversion efficiency of the obtained solar cell is high. On the other hand, an i-layer thickness of 100
In nm, there is no significant difference between the film forming method 2 formed by the separation type film forming apparatus and the film forming method 4 formed by the single chamber film forming apparatus, and the conversion efficiency of the obtained solar cell is almost the same.

The conversion efficiency of a tandem solar cell reflects the conversion efficiency of each junction when the current generated at each junction is substantially the same. Strictly, in the case of a single-junction solar cell having an i-layer thickness of 100 nm, the conversion efficiency is higher than that of the first junction of the tandem-type solar cell due to the reflection effect of the Ag layer. From these results, The junction near the light incident side of the tandem type solar cell does not use the separation type film forming device,
It can be seen that a junction having high conversion efficiency can be obtained even when formed by a single-chamber film forming apparatus, and other junctions can be formed by a separation forming apparatus.

Hereinafter, an example of a configuration concept of the manufacturing apparatus of the present invention will be described. First, for reference, FIG. 16 shows a conventional basic film-forming chamber arrangement for forming a two-layer tandem solar cell. In this apparatus, a film forming apparatus having six chambers is required to prevent intrusion of impurities between semiconductor layers. In contrast, in the case of a typical manufacturing apparatus according to the present invention (FIG. 1), i
Since the first junction with a thin layer is formed in one chamber, a solar cell having a conversion efficiency similar to that of the conventional one can be manufactured in a total of four chambers. Further, the manufacturing apparatus shown in FIG. 2 can be realized by utilizing the fact that the p layer and the n layer are less affected by impurities. In addition to the manufacturing method using these manufacturing devices, each junction is made independent by taking advantage of the small influence of the extraction after each junction is formed, unlike the extraction into the air during the formation of the junction. The manufacturing apparatus of FIG. 3 formed by the manufacturing apparatus can also be used to carry out the manufacturing method of the present invention.

As an improvement of the apparatus shown in FIG. 16, an apparatus is further provided with an intermediate chamber in order to prevent impurities from being mixed in a part or all between the film forming chambers. Although an apparatus formed in a film formation chamber may be used in some cases, the present invention is also applicable thereto.

The present invention can be similarly applied to a three-layer tandem solar cell. First, for reference, FIG. 17 shows a conventional basic film-forming chamber arrangement for forming a three-layer tandem solar cell. In this apparatus, a nine-chamber film forming apparatus is required for the purpose of preventing intrusion of impurities between semiconductor layers. On the other hand, in the case of the typical manufacturing apparatus according to the present invention (FIG. 4), since the first junction having the thin i-layer is formed in one chamber, the conversion efficiency in the seven chambers is almost the same as the conventional one. Can be manufactured. Further, as in the case of the two-layer tandem solar cell, the manufacturing apparatus shown in FIG. 7 can be realized by utilizing the small influence of impurities in the p-layer and the n-layer. Further, in the case where the second joint is also formed in a single chamber, FIG.
8 and FIG. 8, when the first and second junctions are formed in the same film forming chamber, the apparatus shown in FIGS. 6 and 9 can be used. In addition to the manufacturing method using these manufacturing equipment, unlike the case of the two-layer tandem solar cell, unlike the case of taking out into the air during the formation of the junction, the influence of the taking out after each junction is formed FIGS. 10 to 13 in which each junction is formed by an independent manufacturing apparatus by utilizing the small size can be used to implement the manufacturing method of the present invention.

As in the case of the two-layer tandem-type solar cell, as an improvement of the apparatus shown in FIG. 17, there is provided an apparatus in which an intermediate chamber is further provided in order to prevent impurities from being mixed in part or all between the film forming chambers. An apparatus in which a single or similar semiconductor layer is formed in a plurality of film formation chambers may be used, but the present invention can be applied to these cases.

Next, an embodiment of the manufacturing apparatus of the present invention will be described in detail with reference to the drawings.

FIG. 14 is a schematic view of one embodiment of the pin layer forming apparatus of the present invention. In the figure, 1 is a main controller, 2
Denotes a source gas supply device, 3 denotes a gas flow control device, 4 denotes a reaction chamber, 5 denotes a gas pressure control device, and 6 denotes a gas discharge device.

The main control unit 1 is a control panel, and includes a high-frequency power supply, a pressure / temperature display device, a mass flow controller display device, a mass flow controller control unit, a conductance control bubble control unit, a pump switch, a transport mechanism control unit, and the like. It has. As a result, main controller 1
Since the reaction conditions in the reaction chamber can be changed for a p-layer, an i-layer, and an n-layer, a function of forming a pin layer in one chamber is provided.

Each control unit in the main control unit 1
It may be configured using a microcomputer or the like, or may be configured using a wired logic circuit.

The raw material gas supply device 2 is composed of a gas cylinder, and is provided in an amount corresponding to the type of gas used.

The gas flow controller 3 is a mass flow controller, and is provided in an amount corresponding to the type of gas used.

The reaction chamber 4 includes a main body 41 and a substrate holding device 4.
2, a reaction device including a counter electrode 43, a frequency matching device 44, and a transfer device 45. Thereby, so-called glow discharge decomposition chemical vapor deposition can be performed in the reaction chamber 4.

The raw material gas supply device 2, gas flow control device 3, and reaction chamber 4 are connected to each other by piping. As a result, the source gas from the source gas supply device 2 can be supplied to the reaction chamber 4 via the gas flow control device 3.

Since the transfer device 45 and the substrate holding device 42 are the same as those conventionally used in the multi-chamber film forming method, a detailed description of their configurations will be omitted.

The reaction chamber 4 is further provided with a light CV as required.
A device D may be added. In the case of using an optical CVD apparatus, a window for irradiating reaction light is formed in the main body 41 instead of the counter electrode 43.

The reaction chamber 4 is connected to a gas pressure controller 5 via a pipe. This gas pressure adjusting device 5
Consists of a conductance control bubble.

The gas exhaust side of the gas pressure adjusting device 5
It is connected to a gas discharge device 6. This gas discharge device 6
Is composed of a combination of a rotary pump, a turbo molecular pump, a cryopump and a diffusion pump.

Since the pin layer forming apparatus of the present invention is configured as described above, the pin layer can be formed in one room. When a pin layer is formed in one chamber, it is necessary to sufficiently exhaust the inside of the reaction chamber 4 when forming each layer.

It should be noted that this pin layer forming apparatus adjusts the supply of the source gas so that the p layer,
As a single film forming device of i-layer and n-layer, or as pinp
It can also be used as a layer forming apparatus.

As a single film forming apparatus for the p-layer, the i-layer, and the n-layer, a conventional film-forming apparatus can be used.

Hereinafter, the effects of the present invention will be described in more detail based on more specific examples.

EXAMPLE A glass substrate with SnO _{2 was} placed in a single-chamber parallel-plate capacitively coupled glow discharge decomposition film-forming chamber, heated at a heater temperature of 200 ° C., and then SiH ₄ 5 sccm, CH ₃ 15 sccm, B ₂ H ₆ (1000ppmH ₂ )
15 sccm, H ₂ 50 sccm was introduced, reaction pressure 1.0 torr, RF
A 15 nm p-layer was formed with a power of 50 mW / cm ² . Subsequently, after evacuating the residual gas, SiH ₄ 10sccm at the same heater temperature.
At a reaction pressure of 0.3 torr and RF power of 50 mW / cm ²
A layer was formed to a thickness of 100 nm. Then, after exhausting the residual gas, SiH ₄ 5sccm, PH ₃ (1000p
pmH ₂ ) 100 sccm, H ₂ 200 sccm were introduced, and the reaction pressure was 1.0 torr
r, an n-layer having a thickness of 20 nm was formed at an RF power of 50 mW / cm ² to form a first junction. Thereafter, the sample was once taken out of the film forming apparatus, and then installed in a parallel-plate capacitively coupled glow discharge decomposition film forming chamber for forming a p-layer of the separation forming type film forming apparatus, and heated at a heater temperature of 200 ° C. SiH ₄ 5sccm, CH ₃ 15scc
m, B ₂ H ₆ (1000 ppm H ₂ ) 15 sccm, H ₂ 50 sccm are introduced, the reaction pressure is 1.0 torr, the RF power is 50 mW / cm ² , and the p layer is 15 nm.
A film was formed. Subsequently, after exhausting the residual gas, the adjacent i
Move to parallel plate capacitively coupled glow discharge decomposition film formation chamber for layer formation, introduce SiH ₄ 10sccm at heater temperature 200 ° C, react pressure 0.3 torr, RF power 50mW / cm ² , i-layer 400nm
A film was formed. Subsequently, after exhausting the residual gas, the adjacent n
Go for the layer forming a parallel plate capacitively coupled glow discharge decomposition deposition chamber, SiH ₄ 5sccm, PH ₃ at heater temperature 200 ° C. (1000 ppm
H ₂ ) 100 sccm and H ₂ 200 sccm were introduced, and the reaction pressure was 1.0 torr.
r, an n layer was formed to a thickness of 30 nm with an RF power of 50 mW / cm ² to form a second junction. Thereafter, the sample was taken out of the film forming apparatus, and a 1 cm square Ag layer was formed by electron beam evaporation to obtain a solar cell. The conversion efficiency of the two-layer tandem solar cell formed by this film forming method was measured under simulated sunlight of 100 mW / cm ² at AM-1. Table 2 shows the results.

Comparative Example 1 A glass substrate with SnO ₂ was placed in a parallel plate capacitively coupled glow discharge decomposition film forming chamber for forming a p-layer, and the heater temperature was 200 ° C.
In after _{heating, SiH 4 5sccm, CH 3 15sccm} , B 2 H 6 (1000p
pmH ₂ ) 15 sccm and H ₂ 50 sccm were introduced, and the reaction pressure was 1.0 torr
r, a 15 nm p-layer was formed at an RF power of 50 mW / cm ² . Subsequently, after the residual gas was exhausted, the film was moved to an adjacent parallel plate capacitively coupled glow discharge decomposition film formation chamber for forming an i-layer, and SiH _{4 10} sccm was introduced at a heater temperature of 200 ° C., and the reaction pressure was 0.3 torr.
r, an i-layer was formed to a thickness of 100 nm with an RF power of 50 mW / cm ² .
Subsequently, after exhausting the residual gas, the chamber was moved to an adjacent parallel-plate capacitively coupled glow discharge decomposition film forming chamber for forming an n-layer, and heated at a heater temperature of 200 ° C. at 5 sccm for SiH _{4 and} 100 scc for PH ₃ (1000 ppmH ₂ ).
m, 200 sccm of H ₂ were introduced, an n layer was formed to a thickness of 20 nm at a reaction pressure of 1.0 torr and an RF power of 50 mW / cm ² to form a first junction. After that, remove the sample from the film forming apparatus and again
After placing the sample in the same parallel-plate capacitively coupled glow discharge decomposition film formation chamber for p-layer formation and heating at a heater temperature of 200 ° C.,
A second junction was formed in the same manner as the first junction except that the thickness of the i-layer was 400 nm. afterwards,
The sample was taken out of the film forming apparatus, and 1
A solar cell was formed by forming a cm-square Ag layer. The conversion efficiency of the two-layer tandem solar cell formed by this film forming method was measured under simulated sunlight of 100 mW / cm ² at AM-1 in the same manner as in the example. Table 2 shows the results.

COMPARATIVE EXAMPLE 2 A glass substrate with SnO _{2 was} placed in a single-chamber parallel-plate capacitively coupled glow discharge decomposition film forming chamber, heated at a heater temperature of 200 ° C., and then SiH ₄ 5 sccm, CH ₃ 15 sccm, B ₂ H ₆ (1000ppmH ₂ )
15 sccm, H ₂ 50 sccm was introduced, reaction pressure 1.0 torr, RF
A 15 nm p-layer was formed with a power of 50 mW / cm ² . Then, after exhausting the residual gas, at the same heater temperature, SiH _{4 10} sccm
At a reaction pressure of 0.3 torr and RF power of 50 mW / cm ²
A layer was formed to a thickness of 100 nm. Then, after exhausting the residual gas, SiH ₄ 5sccm, PH ₃ (1000p
pmH ₂ ) 100 sccm, H ₂ 200 sccm were introduced, and the reaction pressure was 1.0 torr
r, an n-layer having a thickness of 20 nm was formed at an RF power of 50 mW / cm ² to form a first junction. Thereafter, the sample was once taken out of the film forming apparatus, and the sample was set again in the same film forming chamber, and the thickness of the i-layer was changed to 400 nm in the same manner as in the first bonding.
A second bond was formed. Thereafter, the sample was taken out of the film forming apparatus, and a 1 cm square Ag layer was formed by electron beam evaporation to form a solar cell in the same manner as in the example. The conversion efficiency of the two-layer tandem solar cell formed by this film formation method was AM-1, 1
The measurement was performed under simulated sunlight of 00 mW / cm ² . Table 2 shows the results.

[0043]

[Table 2]

As is clear from Table 2, the conversion efficiency of the embodiment in which the first junction was formed by a single-chamber film forming apparatus and the second junction was formed by a three-chamber separation type film forming apparatus was as follows. The values are almost the same as those of Comparative Example 1 formed by the separation type film forming apparatus. On the other hand, the conversion efficiency of Comparative Example 2 in which both junctions were formed by a single-chamber type film forming apparatus is lower than the conversion efficiency of Comparative Example 1 and Example by 10% or more.

[0045]

As described above, according to the manufacturing method of the present invention, a non-single-crystal tandem solar cell having high performance can be manufactured without forming all the semiconductor layers in a separate film forming chamber. Makes it possible to manufacture a non-single-crystal tandem solar cell at a much lower cost than a manufacturing apparatus according to the prior art in which all are separated and formed.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram of one embodiment of a four-chamber film forming method for a two-layer tandem solar cell.

FIG. 2 is a conceptual diagram of another embodiment of a four-chamber film forming method for a two-layer tandem solar cell.

FIG. 3 is a conceptual diagram of one embodiment of a three-chamber film forming method for a two-layer tandem solar cell.

FIG. 4 is a conceptual diagram of one embodiment of a seven-chamber film forming method for a three-layer tandem solar cell.

FIG. 5 is a conceptual view of one embodiment of a five-chamber film forming method for a three-layer tandem solar cell.

FIG. 6 is a conceptual diagram of one embodiment of a four-chamber film forming method for a three-layer tandem solar cell.

FIG. 7 is a conceptual diagram of one embodiment of a six-chamber film forming method for a three-layer tandem solar cell.

FIG. 8 is a conceptual diagram of one embodiment of a four-chamber film forming method for a three-layer tandem solar cell.

FIG. 9 is a conceptual diagram of an embodiment of a three-chamber film forming method for a three-layer tandem solar cell.

FIG. 10 is a conceptual diagram of another embodiment of a seven-chamber film forming method for a three-layer tandem solar cell.

FIG. 11 is a conceptual diagram of another embodiment of a five-chamber film forming method for a three-layer tandem solar cell.

FIG. 12 is a conceptual diagram of another embodiment of a four-chamber film forming method for a three-layer tandem solar cell.

FIG. 13 is a conceptual diagram of still another embodiment of a four-chamber film forming method for a three-layer tandem solar cell.

FIG. 14 is a schematic view of one embodiment of a pin layer forming apparatus of the present invention.

FIG. 15 is a schematic view of a conventional tandem solar cell manufacturing apparatus.

FIG. 16 is a conceptual diagram of a conventional film forming method for a two-layer tandem solar cell.

FIG. 17 is a conceptual diagram of a conventional film forming method for a three-layer tandem solar cell.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Main control device 2 Raw material gas supply device 3 Gas flow control device 4 Reaction chamber 5 Gas pressure control device 6 Gas discharge device

Continuation of the front page (56) References JP-A-59-61078 (JP, A) JP-A-59-214221 (JP, A) JP-A-4-242979 (JP, A) (58) Fields investigated (Int .Cl. ⁷ , DB name) H01L 31/04-31/078 H01L 21/205

Claims (8)

(57) [Claims] 1. A method of manufacturing a non-single-crystal tandem solar cell comprising a plurality of pin junctions including at least one non-single-crystal layer connected in series in a film thickness direction, wherein at least one
The pin junction was formed by single-chamber deposition apparatus, the pin junction
A method for producing a non-single-crystal tandem solar cell, characterized in that at least one i-layer having a different pin junction is formed in an i-room of a multi-chamber separated film-forming apparatus. 2. A plurality of pin junctions composed of only a layer mainly composed of amorphous silicon or an alloy of amorphous silicon and germanium or carbon are electrically connected in series in a film thickness direction. A method for producing a non-single-crystal tandem solar cell comprising the steps of:
One pin junction is formed using a single-chamber type film forming apparatus
And at least one other pin junction
A method for producing a non-single-crystal tandem solar cell, characterized in that at least the i-layer is formed using a multi-chamber separation type film forming apparatus. 3. A three- pin junction composed of only a layer mainly containing amorphous silicon or an amorphous silicon and an alloy of germanium or carbon is electrically connected in series in a film thickness direction. A method for producing a non-single-crystal tandem solar cell, comprising: forming a first pin junction of a first pin junction and a first pin junction of a second pin junction from a light incident direction;
In this case, adjacent layers are formed using a single-chamber film forming apparatus ,
A method for producing a non-single-crystal tandem solar cell, wherein another layer of the second pin junction and the remaining one pin junction are formed by using a multi-chamber separation type film forming apparatus. 4. A three- pin junction comprising only a layer mainly composed of amorphous silicon or amorphous silicon and an alloy of germanium or carbon is electrically connected in series in a film thickness direction. A non-single-crystal tandem solar cell manufacturing method, wherein each of the pin junctions is formed by using a single-chamber film forming apparatus to form a first pin junction and a second pin junction from a light incident direction. A method for producing a non-single-crystal tandem solar cell, wherein one pin junction is formed using a multi-chamber separated type film forming apparatus. 5. A main control unit, a source gas supply unit, a gas flow control unit, a plurality of reaction chambers having a transfer unit, a substrate holding unit, and a reaction unit, a gas pressure control unit, a gas discharge unit, A pin junction is formed in one reaction chamber under the control of a main controller , and is different from the pin junction.
At least one i-layer of the pin junction is
Another single non-single-crystal tandem solar cell manufacturing apparatus is formed, characterized in Rukoto such by at reaction chamber. 6. Main control unit, source gas supply unit, gas
Flow control device, transfer device, substrate holding device, and reaction device
A plurality of reaction chambers, a gas pressure regulator, and a gas
Manufacture of non-single-crystal tandem solar cell with discharge device
At least one device controlled by a main controller
No pin-pin junction was formed in the reaction chamber
Of non-single-crystal tandem solar cell
apparatus. 7. An apparatus for manufacturing a non-single-crystal tandem solar cell according to claim 5 , wherein said reaction apparatus is a glow discharge decomposition chemical vapor deposition apparatus. 8. The non-single-crystal tandem solar cell according to claim 5 , wherein the reaction device is a device obtained by combining a photolytic chemical vapor deposition device and a glow discharge chemical vapor deposition chemical vapor deposition device. manufacturing device.