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JP3067294B2 - Ferroelectric porcelain composition - Google Patents

Ferroelectric porcelain composition

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Publication number
JP3067294B2
JP3067294B2 JP3202510A JP20251091A JP3067294B2 JP 3067294 B2 JP3067294 B2 JP 3067294B2 JP 3202510 A JP3202510 A JP 3202510A JP 20251091 A JP20251091 A JP 20251091A JP 3067294 B2 JP3067294 B2 JP 3067294B2
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JP
Japan
Prior art keywords
ferroelectric
ratio
present
strain
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3202510A
Other languages
Japanese (ja)
Other versions
JPH05110158A (en
Inventor
潔 端山
正勝 清原
憲一 加藤
Original Assignee
東陶機器株式会社
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は圧電セラミックスに代表
される強誘電体磁器組成物の改良技術に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for improving a ferroelectric ceramic composition represented by piezoelectric ceramics.

【0002】[0002]

【従来の技術】強い電圧を印加した時に強誘電体が歪変
形する性質(逆電圧効果)を利用して微小位置決め装置
等の駆動部(アクチュエータ)に強誘電体磁器組成物
(以下、「強誘電体」と略す。)が採用されている。
2. Description of the Related Art A ferroelectric porcelain composition (hereinafter referred to as "ferroelectric material") is applied to a driving portion (actuator) of a fine positioning device or the like by utilizing the property (reverse voltage effect) that a ferroelectric material is deformed by strain when a strong voltage is applied. Abbreviated as “dielectric”).

【0003】[0003]

【発明が解決しようとする課題】上記強誘電体は、一般
に1V(ボルト)程度の電圧が印加された際の、特性が
最も良いとされている相境界の値をとって応用化されて
いる。
The above ferroelectric material is applied to a phase boundary which is generally considered to have the best characteristics when a voltage of about 1 V (volt) is applied. .

【0004】しかし、相境界付近の特性を基準に選定さ
れた強誘電体は、周囲温度の影響を受けやすく、適当な
温度補正を施す必要がある。
However, a ferroelectric selected based on characteristics near a phase boundary is easily affected by the ambient temperature, and it is necessary to perform appropriate temperature correction.

【0005】又、アクチュエータとしては、歪変位が大
きい程良く、その為に印加電圧を例えば1KVにアップ
したいが、従来のものはこのような高電圧を印加すると
へたってしまい実用に供さない。
Further, as the actuator, the larger the strain displacement, the better, and it is desirable to increase the applied voltage to, for example, 1 KV. However, the conventional actuator is too short to apply such a high voltage and is not practical.

【0006】そこで本発明の目的は、高電圧に堪える電
界特性と、耐久性と、良い温度特性とを兼ね備えた強誘
電体を提供することにある。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a ferroelectric material having electric field characteristics capable of withstanding a high voltage, durability and good temperature characteristics.

【0007】[0007]

【課題を解決するための手段及び作用】上記目的を達成
すべく本発明は、強誘電体磁器組成物をPb(Mg1/3
Nb2/3)O3−PbZrO3−PbTiO3系にBi
23、SnO2、ZnO、SrO等の添加物を加えたも
の若しくはPb(Mg1/3Nb2/3)O3−PbZrO3
PbTiO3系であって、その結晶系が正方晶系とさ
れ、Zr/(Zr+Ti)で表わされるZr比が相境界
のZr比より少なくとも0.5モルパーセント小さく設
定されたことを特徴とする。
In order to achieve the above object, the present invention provides a ferroelectric porcelain composition comprising Pb (Mg1 / 3
Nb2 / 3) O 3 -PbZrO 3 -PbTiO 3 system to Bi
Addition of additives such as 2 O 3 , SnO 2 , ZnO, SrO or Pb (Mg1 / 3Nb2 / 3) O 3 -PbZrO 3-
A PbTiO 3 system, wherein the crystal system is a tetragonal system, and the Zr ratio represented by Zr / (Zr + Ti) is set to be at least 0.5 mol% smaller than the Zr ratio at the phase boundary.

【0008】[0008]

【実施例】本発明者は、従来のPb(Mg1/3Nb2/3)
3−PbZrO3−PbTiO3系強誘電体の欠点を改
良すべく鋭意研究した結果、Pb(Mg1/3Nb2/3)O
3−PbZrO3−PbTiO3系強誘電体に微量のBi2
3、SnO2、ZnO、SrOを添加したもの若しくは
Pb(Mg1/3Nb2/3)O3−PbZrO3−PbTiO
3系で且つ正方晶系の強誘電体は、良好な電界特性及び
耐久性を有し、且つ環境の温度変化に影響され難いとい
う従来に見られない極めて特徴のある強誘電体磁器組成
物が得られることを見い出し本発明に到達したものであ
り、その詳しい内容は以下に述べる通りである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present inventor has proposed a conventional Pb (Mg1 / 3Nb2 / 3).
O 3 -PbZrO 3 -PbTiO 3 system ferroelectric intensive research as a result in order to improve the disadvantages of, Pb (Mg1 / 3Nb2 / 3 ) O
A trace amount of Bi 2 is added to the 3 -PbZrO 3 -PbTiO 3 ferroelectric.
O 3, SnO 2, ZnO, those that have been added SrO or Pb (Mg1 / 3Nb2 / 3) O 3 -PbZrO 3 -PbTiO
The three- system and tetragonal ferroelectrics have excellent electric field characteristics and durability, and have a very unique ferroelectric porcelain composition which is hardly affected by environmental temperature changes. The present invention has been found to be obtained, and the details thereof are as described below.

【0009】図1は本発明に係る強誘電体を含む強誘電
体のZr比と歪の関係を示す図であり、前記試料を厚さ
1mmに研削し、銀ペースト電極を焼き付けた後に70
0Vの電圧を印加し、非接触式レーザ変位計及び歪ゲー
ジを用いて歪を測定したものを示す。
FIG. 1 is a graph showing the relationship between the Zr ratio and the strain of a ferroelectric material including a ferroelectric material according to the present invention.
The figure shows the result of applying a voltage of 0 V and measuring the strain using a non-contact laser displacement meter and a strain gauge.

【0010】なお、上記Zr比はZr/(Zr+Ti)
で表わされ、組成物中に含まれるZrのモル分率を意味
する。表記上、これを100倍してモルパーセントで表
わす。
The above Zr ratio is Zr / (Zr + Ti)
And means the molar fraction of Zr contained in the composition. For notation, this is multiplied by 100 and expressed in mole percent.

【0011】図1によれば、Zr比が40.0の付近で
歪は最大となる。これは相境界付近の組成物が軟かくて
歪易い組成であると考えられる。そして、従来、相境界
付近の組成物が採用されていたのは、歪が大きいことに
起因している。
According to FIG. 1, the strain becomes maximum when the Zr ratio is around 40.0. This is considered to be a composition in which the composition near the phase boundary is soft and easily deformed. Conventionally, the composition in the vicinity of the phase boundary has been adopted because the strain is large.

【0012】図2〜図4は本発明に係る強誘電体を含む
強誘電体に電圧を掛けた時のd定数の変化を示す図であ
り、前記厚さ1mmに研削された試料に1200V/m
mまでの直流電圧を印加し、この際に発生した31方向
の歪に基づいて算出した圧電d定数(以下、「d定数」
と略す。)をプロットしたものである。
FIGS. 2 to 4 are diagrams showing the change in d constant when a voltage is applied to a ferroelectric material including the ferroelectric material according to the present invention. m
m, and a piezoelectric d constant (hereinafter, referred to as “d constant”) calculated based on the 31-direction distortion generated at this time.
Abbreviated. ) Is plotted.

【0013】図2はZr比が35.5〜39.0、即ち
正方晶系の試料におけるものであり、Zr比が大きい程
d定数が大きくなり、Zr比が38.0以下のものは電
界の大きさにd定数はほぼ正比例している。しかし、Z
r比が39.0については1000V/mm付近をピー
クに減少傾向にある。
FIG . 2 shows the results for a sample having a Zr ratio of 35.5 to 39.0, that is, a tetragonal system. As the Zr ratio increases, the d constant increases. The d constant is almost directly proportional to the magnitude of. But Z
When the r ratio is 39.0, it tends to decrease around 1000 V / mm as a peak.

【0014】図3はZr比が40.0、即ち相境界付近
の試料に対するもので、d定数は大きいものの、700
V/mm付近から減少傾向にある。
FIG . 3 shows a sample having a Zr ratio of 40.0, that is, a sample near the phase boundary.
It tends to decrease from around V / mm.

【0015】図4はZr比が41.5、43.0、即ち
菱面体晶系又は擬立方晶系の試料に対するもので、d定
数が小さいとともに電界の増加と比例関係にあるとは言
えない。
FIG . 4 is for a sample having a Zr ratio of 41.5 or 43.0, that is, a rhombohedral or pseudo-cubic system, and cannot be said to have a small d constant and a proportional relationship with an increase in the electric field. .

【0016】図2〜図4から分かるように比較的大きな
d定数が得られ、且つ電界の強さに比例したd定数を得
るためには、正方晶系で且つ、Zr比が38.5付近の
試料が好ましいと言える。
As can be seen from FIGS. 2 to 4 , in order to obtain a relatively large d constant and a d constant proportional to the strength of the electric field, it is necessary to use a tetragonal system and a Zr ratio of about 38.5. Can be said to be preferable.

【0017】図5は本発明に係る強誘電体を含む強誘電
体の温度影響性を示す図であり、縦軸は0℃を1.0と
したときの60℃における歪率であり、正方晶系では歪
率が約1.1であるのに対し、相境界付近から急増し菱
面体晶系又は疑立方晶系では1.2〜1.9倍又はそれ
以上に急増する。雰囲気温度の変化に対し、正方晶系の
試料が最も影響され難いことを示す。
FIG . 5 is a graph showing the temperature effect of the ferroelectric substance including the ferroelectric substance according to the present invention. The vertical axis represents the distortion factor at 60 ° C. when 0 ° C. is set to 1.0. In the case of the crystal system, the strain rate is about 1.1, while the strain increases sharply near the phase boundary, and in the rhombohedral system or the pseudo-cubic system, it rapidly increases 1.2 to 1.9 times or more. This shows that the tetragonal sample is least affected by changes in the ambient temperature.

【0018】図6は本発明に係る強誘電体を含む強誘電
体の電圧繰返し耐久試験による歪の変化率を示す図であ
り、1.2KV/mm、1HZの直流バイアスを1,0
00回、10,000回及び100,000回印加した
後の歪の変化率を示すもので、相境界では劣化が進み、
菱面体晶又は擬立方晶系も劣化が認められる。
FIG . 6 is a graph showing the rate of change in strain of a ferroelectric including the ferroelectric according to the present invention in a voltage repetition durability test.
It shows the rate of change of strain after the application of 00 times, 10,000 times and 100,000 times.
Deterioration is also observed in rhombohedral or pseudo-cubic systems.

【0019】一方、正方晶系では100,000回後で
も劣化の程度は微少であり、耐久性が大きい。
On the other hand, in the tetragonal system, the degree of deterioration is small even after 100,000 times, and the durability is large.

【0020】以上のことから、アクチュエータに好適な
強誘電体磁器組成物は正方晶系で且つ相境界のZr比か
ら少なくとも0.5モルパーセント小さなZr比に設定
したものが好適である。
From the above, it is preferable that the ferroelectric ceramic composition suitable for the actuator is a tetragonal system and has a Zr ratio smaller than the Zr ratio at the phase boundary by at least 0.5 mol%.

【0021】なお、Zr比の設定が相境界に近すぎると
各特性が不安定になりやすく、又、Zr比の設定が小さ
すぎると図1に示した通り発生歪が小さくなり実用に供
さないので、図2〜図4に示した実施例においてはZr
比は38.0〜38.5の範囲に設定されることが好ま
しい。
If the setting of the Zr ratio is too close to the phase boundary, each characteristic tends to be unstable. If the setting of the Zr ratio is too small, the generated distortion becomes small as shown in FIG. Therefore, in the embodiment shown in FIGS.
Preferably, the ratio is set in the range of 38.0-38.5.

【0022】なお、Pb(Mg1/3Nb2/3)O3−Pb
ZrO3−PbTiO3系の為の添加物はBi23、Sn
2、ZnO、SrOに限らずBaO、CaO、MnO2
等の酸化物としてもよい。又、本発明の強誘電体は圧電
セラミックスに限らず広義の強誘電体として使用され得
ることは勿論である。
Note that Pb (Mg1 / 3Nb2 / 3) O 3 -Pb
Additives for ZrO 3 -PbTiO 3 system Bi 2 O 3, Sn
Not limited to O 2 , ZnO, SrO, BaO, CaO, MnO 2
And the like. Further, the ferroelectric of the present invention is not limited to piezoelectric ceramics, and can be used as a ferroelectric in a broad sense.

【0023】[0023]

【発明の効果】以上に述べた通り本発明の強誘電体磁器
組成物は、正方晶系なので強電界に対し良好な比例関係
を保って大きな歪を生じ、雰囲気の温度変化にもあまり
影響されず、且つ、耐久性良好である。よって、本発明
によれば高出力で信頼性の高い強誘電体磁器組成物が提
供できる。
As described above, the ferroelectric porcelain composition of the present invention is tetragonal, and maintains a good proportional relationship with a strong electric field, generates a large strain, and is hardly affected by a change in the temperature of the atmosphere. And good durability. Therefore, according to the present invention, a high-output and highly reliable ferroelectric ceramic composition can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る強誘電体を含む強誘電体のZr比
と歪の関係を示す図
FIG. 1 is a diagram showing a relationship between a Zr ratio and a strain of a ferroelectric including a ferroelectric according to the present invention.

【図2】本発明に係る強誘電体を含む強誘電体に電圧を
掛けた時のd定数の変化を示す図
FIG. 2 is a diagram showing a change in d constant when a voltage is applied to a ferroelectric including a ferroelectric according to the present invention.

【図3】本発明に係る強誘電体を含む強誘電体に電圧を
掛けた時のd定数の変化を示す図
FIG. 3 is a diagram showing a change in d constant when a voltage is applied to a ferroelectric including a ferroelectric according to the present invention.

【図4】本発明に係る強誘電体を含む強誘電体に電圧を
掛けた時のd定数の変化を示す図
FIG. 4 is a diagram showing a change in d constant when a voltage is applied to a ferroelectric including a ferroelectric according to the present invention.

【図5】本発明に係る強誘電体を含む強誘電体の温度影
響性を示す図
FIG. 5 is a diagram showing the temperature influence of a ferroelectric including a ferroelectric according to the present invention.

【図6】本発明に係る強誘電体を含む強誘電体の電圧繰
返し耐久試験による歪の変化率を示す図
FIG. 6 is a diagram showing a rate of change in strain of a ferroelectric including a ferroelectric according to the present invention by a voltage repetition durability test;

フロントページの続き (56)参考文献 特開 平1−305856(JP,A) 特公 昭45−30151(JP,B1) (58)調査した分野(Int.Cl.7,DB名) H01L 41/187 C04B 35/49 Continuation of the front page (56) References JP-A-1-305856 (JP, A) JP-B-45-30151 (JP, B1) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 41 / 187 C04B 35/49

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 Pb(Mg1/3Nb2/3)O3−PbZr
3−PbTiO3系にBi23、SnO2、ZnO、S
rO等の添加物を加えたもの若しくはPb(Mg1/3N
b2/3)O3−PbZrO3−PbTiO3系であって、そ
の結晶系が正方晶系とされ、Zr/(Zr+Ti)で表
わされるZr比が相境界のZr比より少なくとも0.5
モルパーセント小さく設定されたことを特徴とする強誘
電体磁器組成物。
1. Pb (Mg1 / 3Nb2 / 3) O 3 -PbZr
O 3 -PbTiO 3 system Bi 2 O 3, SnO 2, ZnO, S
Rb or other additives or Pb (Mg1 / 3N
b2 / 3) O 3 —PbZrO 3 —PbTiO 3 system whose crystal system is tetragonal and the Zr ratio represented by Zr / (Zr + Ti) is at least 0.5
A ferroelectric porcelain composition characterized in that it is set to be smaller by mole percent.
JP3202510A 1991-07-17 1991-07-17 Ferroelectric porcelain composition Expired - Lifetime JP3067294B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3202510A JP3067294B2 (en) 1991-07-17 1991-07-17 Ferroelectric porcelain composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3202510A JP3067294B2 (en) 1991-07-17 1991-07-17 Ferroelectric porcelain composition

Publications (2)

Publication Number Publication Date
JPH05110158A JPH05110158A (en) 1993-04-30
JP3067294B2 true JP3067294B2 (en) 2000-07-17

Family

ID=16458680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3202510A Expired - Lifetime JP3067294B2 (en) 1991-07-17 1991-07-17 Ferroelectric porcelain composition

Country Status (1)

Country Link
JP (1) JP3067294B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6420742B1 (en) * 2000-06-16 2002-07-16 Micron Technology, Inc. Ferroelectric memory transistor with high-k gate insulator and method of fabrication
KR100977420B1 (en) * 2008-11-04 2010-08-24 한국전기연구원 Low Temperature Sintered Piezoelectric Ceramic Composition for High Displacement Stacked Piezoelectric Actuators

Also Published As

Publication number Publication date
JPH05110158A (en) 1993-04-30

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