JP3010327B2 - Information processing device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a large-capacity, high-density information processing apparatus having a recording density on the order of nm.

[0002]

2. Description of the Related Art In recent years, applications of memory materials have been at the core of the electronics industry such as computers and related equipment, video disks, digital audio disks, and the like, and the development of materials has been extremely active. The performance required for the memory material varies depending on the application, but in general, a material having a high density and a large recording capacity is required.

Conventionally, semiconductor memories and magnetic memories using a magnetic material or a semiconductor as a material have been mainly used. However, optical memories have been developed in recent years with the development of laser technology. Utilization has enabled high-density recording and reproduction on the order of μm.

As such a recording medium, a thin film of a metal or a metal compound, an organic dye thin film, or the like is used, and holes are formed by evaporation / melting using heat of a laser beam, or the reflectance is changed, thereby obtaining information. Have recorded.

[0005] Further, at present, the use of video information is rapidly progressing, and there is an increasing need for smaller and larger-capacity high-density memories.

[0006]

However, in the conventional optical memory, since recording and reproduction are performed by converging the laser beam by the optical system, it is difficult to narrow the beam diameter to a wavelength smaller than the light wavelength, and light having a shorter wavelength is used. However, there is a disadvantage that the recording unit is limited to the order of μm.

An object of the present invention is to achieve a large-capacity, high-density information processing capable of recording, reproducing, and erasing having a recording density on the order of nm, which has not been achieved by the conventional information processing apparatus using an optical memory. It is to provide a device.

[0008]

According to the information processing apparatus of the present invention, by applying a voltage between the probe electrode and the plane electrode, the light emitting state of the recording medium, which is directly or indirectly excited, is changed. Detecting and performing almost the same operation as that of the ordinary scanning tunneling microscope (hereinafter, referred to as “STM”) in the order of nm on the organic molecular surface, thereby achieving a large capacity with a recording density in the order of nm.・
High-density recording, reproduction, and erasing can be performed.

That is, a first aspect of the present invention is an information processing apparatus in which a probe electrode is disposed so as to face a plane electrode provided with a recording medium , wherein the recording medium includes an electroluminescent thin film;
Thin films containing ions that change the emission state of field emission thin films
It used a laminate of the door, and means for applying a voltage between the planar electrode and the probe electrode, thus being excited by applying a voltage between the planar electrode and the profile <br/> over blanking electrode Was
An information processing apparatus characterized by having a light detection means for detecting the emission state of the recording medium.

Furthermore the present invention the first information processing apparatus, a thin film containing ions which change the emission state of the electroluminescent thin film, preferably a thin film containing the activator of the electroluminescent thin film or the electric field, The information processing apparatus according to claim 1, wherein the thin film contains ions forming a mixed crystal with the components of the thin film for light emission. The thin film for electroluminescence further includes an ion for changing a light emitting state of the thin film for electroluminescence. The information processing apparatus, wherein a partition layer is provided between the thin film and the thin film for electroluminescence by applying a voltage between the flat electrode and the probe electrode. The information processing apparatus according to claim 1, wherein ions for changing a light emitting state are injected into the electroluminescent thin film.

According to a second aspect of the present invention, in the first information processing apparatus of the present invention, a noble metal electrode, preferably one of an Au electrode and an Ag electrode is used as the plane electrode. It is.

A third aspect of the present invention is the information processing apparatus according to the first or second information processing apparatus, wherein an optical fiber for information transfer is further connected to the light detecting means. Is an information processing apparatus wherein a plurality of the information processing apparatuses are connected using an optical fiber.

FIG. 1 shows a schematic configuration of an information processing apparatus according to the present invention.
1 will be described. In the figure, reference numeral 1 denotes a recording medium, 2 denotes a plane electrode provided with the recording medium 1, 3 denotes a substrate for forming a plane electrode, 6 denotes a probe electrode arranged opposite to the recording medium 1, and 11 denotes a probe electrode. A means for applying a voltage between 6 and the plane electrode 2, 19 is a tunnel current flowing between the probe electrode 6 and the plane electrode 2, and 5 is a light detecting means.

In the present apparatus, the light emission state 4 of the recording medium 1 excited directly or indirectly by the tunnel current 19 flowing by applying a voltage between the probe electrode 6 and the plane electrode 2 is detected by the light detection means 5. It is possible to detect and reproduce the recorded information.

In the figure, reference numeral 7 denotes a probe electrode 6 and a recording medium 1.
Are piezo-electric actuators movable in the Z direction, which are means for controlling the distance from the surface of the recording medium 1, and 8, 9 are X, Y, which are means for moving the probe electrode 6 along the surface of the recording medium 1. A piezo-electric actuator movable in a direction, 10 is a unit for detecting a tunnel current flowing between the probe electrode and the plane electrode, and 12 is mainly for removing a noise component of the tunnel current signal detected by the tunnel current detection unit 10. A low-pass filter 15 is a piezo piezoelectric actuator 7 movable in the Z direction.
Amplifier that adjusts the feedback gain to
Reference numeral 14 denotes a microcomputer that controls the entire memory device.

Further, in the present apparatus, a band-pass filter 1 for removing noise from the electric signal converted by the tunnel current detecting means 10 and effectively extracting information components.
3, the reproduction of the recorded information can be realized by the light detecting means 5, the tunnel current detecting means 10, or both means. By comparing the reproduced information by using both means simultaneously, the error at the time of the reproduction is detected. it can.

FIG . 2 is an example of a configuration diagram of the first information processing apparatus of the present invention. In the figure, reference numeral 33 denotes a thin film for electroluminescence,
Reference numeral 1 denotes a thin film containing ions that change the light emitting state of the electroluminescent thin film, 32 denotes a partition layer provided between the electroluminescent thin film 33 and the activator thin film 31, and 1 denotes a thin film 31 / partition layer. 32 / a recording medium having a configuration of an electroluminescent thin film 33.

In the figure, reference numeral 2 denotes a plane electrode on which the recording medium 1 is disposed, 3 denotes a substrate on which the plane electrode is disposed, 6 denotes a probe electrode disposed opposite to the recording medium 1, and 34 denotes a probe electrode. Reference numeral 7 denotes an arranged cantilever, 7 denotes a piezoelectric actuator capable of moving the cantilever in the Z direction perpendicular to the surface of the recording medium 4, 35 denotes a He-Ne laser light source, and 36 denotes light from a two-divided light detecting unit. It is a displacement detecting means.

Reference numeral 11 denotes a means for applying a voltage between the probe electrode 6 and the plane electrode 2, reference numeral 37 denotes an XYZ-direction driving device which is a piezoelectric element, and reference numeral 14 denotes a microcontroller for controlling the entire memory device. It is a computer.

Reference numeral 38 denotes a wavelength filter, and reference numeral 5 denotes light detecting means. In this apparatus, a ZnS: Cl thin film or a ZnS: Ag, Cl thin film can be used as the electroluminescent thin film 33 constituting the recording medium 1, and the electroluminescent thin film 31 is preferably used as the thin film 31. Thin film containing activator ions of, for example, copper palmitate LB
Film or a thin film containing ions that form a mixed crystal with the components of the electroluminescent thin film 33, for example, cadmium palmitate L
A B film or the like can be used, but these are not limited to the above-mentioned combinations, and may be any as long as they have the same action.

Further, the first information processing apparatus of the present invention is not limited to the above-mentioned configuration.

[0022]

Next, the present invention will be described in more detail with reference to examples.

[0023] One Reference Example Reference Example relates information processing apparatus shown in FIG.

[0024] First described manufacturing method of the present reference embodiment polyimide LB film 2,4,6 layers where an organic compound thin film having a switching memory characteristic used in the recording medium 1 in Example or eight layers.

The polyamic acid represented by the formula (1) is N, N-
After dissolving in a dimethylacetamide solvent (concentration in terms of monomer: 1 × 10 ⁻³ M), a separately prepared 1 × 10 ⁻³ M solution of N, N-dimethyloctadecylamine in the same solvent was mixed with 1: 2 (V / V) to prepare a polyamic acid octadecylamine salt solution represented by the formula (2).

This solution was developed on an aqueous phase composed of pure water at a water temperature of 20 ° C., and a monomolecular film was formed on the water surface. After removing the solvent, the surface pressure was increased to 25 mN / m. While keeping the surface pressure constant, the electrode substrate is moved at a speed of 5 m across the water surface.
After immersion gently at m / min, then 5 mm / min
And gently pulled up to produce a two-layer Y-type monomolecular cumulative film. This operation was further repeated to form 4, 6, 8 layers of a monomolecular cumulative film of polyamic acid octadecylamine salt.

Next, the substrate was subjected to a heat treatment at 300 ° C. for 10 minutes to imidize the polyamic acid octadecylamine salt (formula (3)) to obtain 2, 4, 6, or 8 polyimide LB films.

[0028]

Embedded image

The polyimide LB film prepared as described above is used for the recording medium 1, which is placed on the flat electrode 2 made of a noble metal electrode, and the probe electrode 6 is moved to a desired surface position. A bias of +100 mV is applied between the probe electrode 6 and the plane electrode 2 so that the potential on the second side is low, and the tunnel current flowing at this time is fixed to the distance between the probe electrode 6 and the recording medium 1 at which the tunnel current becomes 10 pA. By applying a triangular wave voltage of +3.0 V and a width of 0.5 sec, a recording bit corresponding to a writing state 17 having a diameter of about 5 to 10 nm and a resistance value lower than that of the surroundings was formed on the recording medium 1. Further, the probe electrode 6 is moved onto the recording bit, and +100 m between the probe electrode 6 and the plane electrode 2 so that the plane electrode side 2 has a high potential.
V is applied, and the tunnel current flowing at this time becomes 1
By fixing the distance between the probe electrode 6 and the recording medium 1 at 0 pA and applying a triangular wave voltage having a peak voltage of +5.0 V and a width of 0.5 sec, the resistance value of the recording bit is returned to a state substantially the same as the surroundings. The recording bit could be erased.

The probe electrode 6 is scanned by the piezoelectric actuators 8 and 9 along the surface of the recording medium 1 while applying a bias voltage of about 0.5 to 2.5 V between the probe electrode 6 and the plane electrode 2. By doing so, the difference in the light emission state corresponding to the difference between the write state 17 and the non-write state 18 of the recording medium 1 can be detected by the light detection unit 5.
And the recorded information could be reproduced.
However, as the light detection means, those having sensitivity in the visible region and those having sensitivity in the infrared region were prepared and switched according to the emission wavelength.

In this case, particularly, the feedback gain is weakened by the amplifier 15 so that
Although the distance is controlled, the scanning of the probe electrode 6 is performed in a so-called constant height (constant distance) mode that operates in a substantially constant distance mode with respect to the writing state 17 corresponding to the recording bit. When scanning over 17, the tunnel current increases as compared to when scanning over non-writing state 18 in response to the decrease in the resistance value of recording medium 1. Such a difference in the tunnel current is the main cause, which affects the intensity of the surface plasmon wave excited near the surface of the plane electrode 2, and converts the surface plasmon into light by means of converting the surface plasmon into light. It is presumed that the light is detected by the light detection means 5 as light emission states having different intensities, but the present invention is not limited to this mechanism.

FIG . 3 is a view for explaining the means for converting the surface plasmon into light . In FIG . 3 , reference numeral 41 denotes a grating pitch 1 which is a decoupling means for converting the surface plasmon into light. . In this embodiment, since the planar electrode 2 has a macro-shaped grating structure in the macro, there is an effect that the tracking operation can be performed using the edge of the grating. Here, the pitch of the grating was about 0.5 to 2.0 μm. As the decoupling means, a prism decoupler other than the grating can be used.

Embodiment 1 This embodiment relates to the first information processing apparatus of the present invention shown in FIG .

In this embodiment, as the electroluminescent thin film 33, a ZnS; Cl thin film, and as the activator thin film 31 containing activator ions that change the light emitting state of the electroluminescent thin film 33, copper palmitate (( A C ₁₆ H ₃₃ COO) ₂ Cu) thin film and a lipid LB monomolecular film were used as the partition layer 32.

First, a mica substrate is used as the substrate 3 for preparing a plane electrode, and a thin film of Au having a thickness of 1000 ° is epitaxially grown on the mica substrate by a vacuum evaporation method.
Used as Further, Z mixed with 0.01 mol of KCl is used.
A film of nS was formed to a thickness of 20 ° by a vacuum evaporation method to form a ZnS; Cl thin film which was the electroluminescent thin film 33. Further, a monomolecular film of stearyl acid (C ₁₈ H ₃₇ COOH) was formed on the ZnS; Cl thin film by the LB method to form a partition layer 32. Specifically, the electroluminescent thin film 3
2 × 10 ⁻³ mol after placing the substrate 3 on which the substrate 3 and the plane electrode 2 are arranged in pure water filled in the LB trough.
/ L of a chloroform solution of stearic acid in pure water to increase the surface pressure to 20 mN / m.
While maintaining the mN / m, the substrate 3 was pulled up vertically to the water surface at a rising speed of 4 mm / min and dried to produce a monomolecular film of stearic acid. Here, the thickness of the stearic acid monomolecular film is 25 °. Further, a bimolecular film of copper palmitate ((C ₁₆ H ₃₃ COO) ₂ Cu) was formed on the monomolecular film of stearic acid by an LB film to form an activator thin film 31 containing an activator. Specifically, 2 × 10 ⁻³ mol / l of a solution of palmitic acid in chloroform was added to 1 × 10 ⁻⁵ mol / l of a chloroform solution.
After being spread on an aqueous solution of CuSO ₄ and increasing the surface pressure to 20 mN / m, the substrate 3 is dried by reciprocating once in the vertical direction perpendicular to the water surface at a speed of 4 mm / min while maintaining the surface pressure at 20 mN / m. A bilayer film of copper palmitate was prepared. Here, the thickness of the bimolecular film of copper palmitate is 44 °
It is.

FIG . 5 is a diagram showing an emission spectrum of ZnS: Cu, Cl. As shown in FIG.
It is known that the emission spectrum of Cl changes depending on the Cu concentration (Literature: Sohachiro Hayakawa, Material and Light P1
52, Asakura Shoten). That is, ZnS: Cu, Cl is C
If there is no u ion, it emits blue light having a peak around 460 nm, and if there is an appropriate amount of Cu ion, it becomes 540 nm.
It emits green light with a peak near it.

FIG . 6 is an explanatory diagram of the writing process of the recording medium 1. FIG. 6A shows an initial state of the recording medium 1, and FIG. 6B shows a write state after voltage application.

The probe electrode 6 is moved to a desired position on the recording medium 1 by the XYZ direction driving device 37, and the probe electrode 6 is moved.
After the probe electrode 6 is brought closer to the surface of the recording medium 1 until the interatomic force acting on the tip of the probe electrode becomes about 10 ^-9 N, the voltage application means 11 sets the probe electrode 6 side to a positive potential and increases the voltage to +4.
When a triangular wave voltage of 0 V was applied for 0.5 sec, Cu ions 71 in the center of the copper palmitate bilayer film 31 in the initial state passed through the partition layer 32 composed of a monomolecular stearic acid film due to the effect of an electric field. ZnS; Cl film 3
3 and a recording state was obtained. However, the detection of the atomic force is based on He-
The displacement of the cantilever was obtained by detecting the displacement of the reflected light of the Ne laser light by the light displacement detecting means 36.

In reproducing the recorded state, the atomic force acting on the tip of the probe electrode 6 is applied while applying a triangular wave voltage of −3.0 V by the voltage applying means 11 so that the probe electrode 6 side has a negative potential. The cantilever is moved to the Z-direction movable piezo-electric actuator 7 so as to be constant.
XYZ driving device 37 while performing feedback control with
XY scanning of the surface of the recording medium 1 was performed. At this time, the voltage applied between the probe electrode 6 and the plane electrode 2 (−3.0
The light emitting state excited by V) was detected by the light detecting means 5 to reproduce the recorded information.

Here, as the wavelength filter 38, 5
A green wavelength pass filter having a peak at 40 nm was used.

When the surface of the recording medium 1 is scanned while applying a voltage of −3.0 V, blue light emission by ZnS is caused by the electroluminescence phenomenon where Cu ions are not implanted (no voltage is applied). Is recognized.

On the other hand, at the site where the Cu ions were implanted (voltage was applied), green light emission considered to be due to ZnS: Cu, Cl was observed at a voltage of -3.0 V. That is, by scanning the probe electrode 6 while applying a voltage of -3.0 V, green light emission is observed only at the voltage application site, blue light emission at other initial state sites, and after passing through the green wavelength filter 38. By detecting the light intensity with the light detecting means 5, the recorded state could be reproduced.

Here, the transition probability (W) of light emission is determined by the overlap of the wave functions of the donor (sensitizing center) and the acceptor (light emitting center), and if one of the donor and acceptor levels is shallow, W (r) = W _max exp (−2r / r _B ) if approximation similar to a hydrogen atom is allowed. Here, r _B is the Bohr radius, and r is the distance between the donor and the acceptor. That is, Cl
^It can be seen that the shorter the distance between the donor such as-and the acceptor that is Cu ⁺ , the higher the transition probability of green light emission and the greater the green light emission intensity.

The transition probability is exp (−2r / r _B )
Changes only when scanning near the acceptor.
Strong green light emission is obtained. As described above, the recording, reproducing, and erasing of information having a recording density on the order of nm can be performed by scanning the surface of the recording medium 1 with the probe electrode 6 in substantially the same manner as in the ordinary STM image observation operation.

In this embodiment, the activator ion is formed when the activator thin film 31 is formed by providing a monomolecular film of stearic acid as the partition layer 32 between the activator thin film 31 and the electroluminescent thin film 33. Is prevented from being injected into the electroluminescent thin film 33.

Further, by using a bimolecular film of copper palmitate as the activator thin film 31, the probe electrode 6 can be activated when scanning with a constant atomic force with the tip of the probe electrode 6. Disturbing the position of the ions is prevented by the part of the alkyl chain of palmitic acid.

Embodiment 2 This embodiment relates to the first information processing apparatus of the present invention shown in FIG. 2 and shows another mode of Embodiment 1 .

In this embodiment, the LB of manganese palmitate ((C ₁₆ H ₃₃ COO) ₂ Mn) is used as the thin film layer 31 containing ions for changing the light emitting state of the electroluminescent thin film 33.
It is almost the same as Example 1 except that a film was used.

FIG . 7 is a diagram showing an emission spectrum of ZnS: Mn, Cl. As shown in the figure, it is known that this emission spectrum is an orange emission having a peak near 585 nm (FIG . 7 ) . References: Osamu Harashima, Kazushi Uchida
Co-author, Electroluminescence-Its Application, P9, Nikkan Kogyo Shimbun).

Therefore, in the same manner as in the first embodiment, a triangular wave of +4.0 V is set to 0.
After the surface of the recording medium 1 is locally changed from ZnS: Cl to ZnS: Mn, Cl by applying 5 sec, a voltage of −3.0 V is applied so that the probe electrode 6 side has a negative potential. While scanning the probe electrode 6 along the surface of the recording medium 1, orange light was obtained at the writing portion, and blue light was emitted at other portions.

By detecting the difference in the light emission state by the light detecting means 5, the recording and reproduction could be performed. However, as the wavelength filter 38, one having a peak transmission wavelength near 585 nm was used.

In the same manner as in the first embodiment , recording, reproducing, and erasing of information having a recording density on the order of nm can be performed.

Embodiment 3 This embodiment relates to the first information processing apparatus of the present invention shown in FIG. 2 and shows another embodiment of Embodiments 1 and 2 .

In this embodiment, except that the thin film 31 containing ions that change the light emission state of the electroluminescent thin film 33 is a thin film containing ions that form a mixed crystal with the components of the electroluminescent thin film 33, This is almost the same as the first and second embodiments .

The electroluminescent thin film 33 is made of a zinc sulfide (ZnS:
(Ag, Cl) thin film was used. ZnS: Ag, Cl
As the thin film 31 containing ions forming mixed crystals with the components of the thin film 33, an LB film of cadmium palmitate ((C ₁₆ H ₃₃ COO) ₂ Cd) laminated in six layers was used.

FIG . 8 is a diagram showing an emission spectrum of a mixed crystal phosphor of ZnS and CdS. As shown in FIG.
It is known that when Cd is added to S: Ag, Cl, the emission spectrum shifts to longer wavelengths as the concentration increases (Literature: Osamu Harashima and Kazuzo Uchida, Electroluminescence- Application, P11, Nikkan Kogyo Shimbun).

In this embodiment, a pulse voltage of +4.0 V is applied to the voltage applying means 11 so that the probe electrode 6 has a positive potential.
When the pulse width is set in the range of 0.1 msec to 100 msec, the injection amount of cadmium ions into the ZnS: Ag, Cl thin film 33 can be controlled according to the pulse width.

Therefore, when the recording medium 1 is scanned while applying a voltage of -3.0 V by the voltage applying means 11 so that the probe electrode 6 has a negative potential, a portion where writing is performed with a longer pulse width emits light. A phenomenon in which the peak wavelength becomes longer was recognized, and a multi-valued recorded state could be reproduced by detecting the difference in the emission spectrum of each part on the recording medium 1 with the light detecting means 5. However, the light detecting means 5
Using a light spectrum detecting means composed of a grating and a light line sensor, a spectral spectrum during scanning of the probe electrode 6 was detected in real time to reproduce written information.

In the same manner as in the first embodiment , recording, reproducing, and erasing of information having a recording density on the order of nm can be performed.

Second Embodiment A third embodiment of the third information processing apparatus according to the present invention will be described. What
In this embodiment, the recording medium of Embodiment 1 is used.
However, the recording media of Examples 1 to 3 can be used in the same manner.
it can.

[0061] Figure 9 is a block diagram of an information processing device manufactured in this reference example, Reference <br/> embodiment except that transferring the record information corresponding to the light emission state of the recording medium using an optical fiber It is almost the same as 1.

In FIG . 9 , 101 and 102 are optical fibers, 103 is an optical amplifying unit, 104 is an information receiving unit, 105 is a light detecting means, and 106 is a slit which is an optical system component.

The lengths of the optical fibers 101 and 102 are arbitrary, and can be used as a part of an optical information communication system by using, for example, several tens of cm to several km.

[0064] In this reference example, while applying a bias voltage of about 0.5~2.5V between the probe electrode 6 and the plane electrode 2, the piezoelectric element actuator along the probe electrode 6 on the surface of the recording medium 1 The scanning state of the recording medium shown in FIG.
Or the light emitting state 4 corresponding to the difference of the non-writing state 18
Is input to the input optical fiber 101 through the slit 106, passes through the optical amplification unit 103 to amplify the intensity, and then is transmitted through the communication optical fiber 102, and the light detection provided in the information receiving unit 104 is performed. The difference in the light emission state of the recording medium 1 was detected by the means 105, and the recorded information was reproduced.

[0065] In the present reference example, the light emission phenomenon from the recording medium 1 surface in STM configuration, it is possible to light transmitted to a remote directly after construction is simple, after a conventional recording information once electrical information, the light Higher speed was achieved compared to the method of converting and transferring.

[0066] Reference Example 3 This reference example is an information processing apparatus of Reference Example 2 was coupled two by an optical fiber, it is obtained by the information processing apparatus capable of two-way communication. In the present embodiment, the following
Although the recording medium is used, the recording mediums of the first to third embodiments are similar.
Can be used.

[0067] Figure 10 is a main configuration diagram of the information processing apparatus of the present reference example, the optical information corresponding to the light emission state of the recording medium 1 of one, while irradiating the other of the recording medium 1b, the second The recorded information is reproduced by applying a voltage between the probe electrode 6b and the second plane electrode 2b.

In FIG . 10 , 111a and 111b are in a relation of a transmitter and a receiver, respectively, but the flow of information can be reversed by changing the operation. That is, 111a
And 111b are equivalent transceivers capable of two-way communication.

In the figure, reference numeral 1b denotes a second recording medium, 2b denotes a second plane electrode on which the recording medium 1b is arranged, 3b denotes a substrate for forming a second plane electrode, and 6b denotes a second recording electrode. A second probe electrode opposed to the medium 1b;
b is means for applying a voltage between the probe electrode 6b and the plane electrode 2b.

Reference numerals 112a, 112b and 113 are optical fibers, and reference numerals 114a and 114b are bidirectional optical amplification units.

[0071] In this reference example, while applying a bias voltage of about 0.5~2.5V between the probe electrode 6 and the plane electrode 2, the piezoelectric element actuator along the probe electrode 6 on the surface of the recording medium 1 By scanning with the recording mediums 8 and 9, the writing state 1 of the recording medium shown in FIG.
7 or the light emitting state 4 corresponding to the difference between the non-writing state 18 is made incident on the input / output optical fiber 112a, amplified by the bidirectional optical amplifying unit 114a, transmitted through the communication optical fiber 113, and received by the receiver 111b. The second probe electrode 6b is again amplified by the bidirectional optical amplification unit 114b in the inside, and is irradiated from the input / output optical fiber 112b to the second recording medium 1b.
The probe electrode 6b on the receiver 111b is scanned along the surface of the receiver 111b by scanning the probe electrode 6 on the receiver 111b side at a time when the probe electrode 6 on the transmitter 111a moves on the recording bit corresponding to the “0” or “1” state. The potential on the side of the plane electrode 2b where the threshold voltage is limited between the plane electrodes 2b is set to a low potential -2.9
By applying a voltage of V, information on the transmitter 111a side was transferred to the receiver 111b and recorded and reproduced.

In FIG . 10 , reference numeral 115 denotes an assist light including optical information corresponding to a light emitting state which is directly or indirectly excited by a tunnel current flowing between the probe electrode 6 and the plane electrode 2, and is recorded on the transmitter 111a side. If the bit is in the write state 17 corresponding to the state "1", the light is emitted as intense light. If the recording bit on the transmitter 111a side is the non-write state 18 corresponding to the state "0", the light is emitted as weak light. Therefore, the assist light 115 can record and reproduce information corresponding to the recording information of the transmitter 111a on the portion of the recording medium 1b to which the threshold voltage is applied. In this embodiment, the recording media 1 and 1b
An azo compound having a quinone group and a hydroquinone group in one molecule was used.

FIG. 11 shows a configuration diagram of the bidirectional optical amplification units 114a and 114b used in this embodiment. In the figure, 121a and 121b are infrared lasers having a wavelength of 1500 nm, for example, and 122a and 122b are 500 nm to
A photodetector that converts an optical signal containing recording information over infrared light into an electric signal and transmits it to 121a and 121b;
Reference numerals 3a and 123b denote photodetectors for converting an infrared light signal including the transferred recording information into an electric signal.
Reference numerals a and 124b denote light irradiation means having a peak wavelength at 400 nm, and 125a and 125b and 126a and 126b.
b is an optical distributor.

In the information transfer from the transmitter 111a to the receiver 111b, the distance between the probe electrode 6 and the plane electrode 2 is set to 0.1.
When the probe electrode 6 is scanned along the surface of the recording medium while applying a bias voltage of about 5 to 2.5 V, light emission from 500 nm to infrared light containing recording information as light emission intensity passes through the input / output fiber 112a. Optical distributor 12
5a, which is detected by the photodetector 122a, converted into an electric signal, and transmitted to the infrared laser 121a. The infrared laser 121a transmits information at a light intensity corresponding to the transmitted electric signal to both the receiver side. The light is sent to the light amplification unit 114b.

The optical information transmitted through the communication optical fiber 113 is distributed by the optical distributor 126b,
b and converted to an electric signal to 400 nm
The light is transmitted to the wavelength light irradiation means 124b. Where 400n
The m-wavelength light irradiating means 124b includes an incandescent lamp, an interference filter, and a liquid crystal light shutter, and emits light having a wavelength of 400 nm at a light intensity corresponding to the transmitted electric signal to the recording medium 1b.
Irradiate the surface of

[0076] Next, the principle of writing by the recording medium and the assist light used in the present reference example will be described.
As an example of a recording medium, an azo compound (quinone group and hydroquinone group having the structure shown in FIG.
(Including meta / patter positions). When this compound is irradiated with light having a wavelength of 400 nm via the light irradiation means 124a and 124b, if the light intensity is strong, trans-type to cis-type photoisomerization occurs in the azo group in the molecule, and FIG.
The structure shown in FIG. Further, while the light is being irradiated, the space between the plane electrode 2b and the probe electrode 6b is as shown in FIG.
When an electric field is applied in the direction shown in ( ¹ ), protons (H ⁺ ) move between the quinone group and the hydroquinone group, which have been in a hydrogen bond state, and the structure shown in FIG . Here, when the irradiation of light is stopped, cis-type to trans-type photoisomerization occurs again, and the structure shown in FIG. 12D is obtained. This structure is a state in which is written, occurs proton transfer between the structure of the initial state as compared the hydroquinone group and a quinone group shown in FIG. 12 (a), the intramolecular electron distribution state changes. Therefore, the structure (initial state) shown in FIG.
In the structure (write state) shown in FIG. 12D, the shape of the tunnel barrier between the plane electrode 2b and the probe electrode 6b changes, so that the plane electrode 2b-probe electrode 6
The value of the tunnel current flowing when a bias voltage is applied between b changes. By detecting this change, the state (initial state or writing state) of the molecule at the position accessed by the probe electrode 6b can be distinguished.

That is, if the recording bit on the transmitter 111a side is the writing state 17 corresponding to the state “1”, 4
The assist light 115 having a wavelength of 00 nm has a high light intensity. At this time, at the write position of the recording medium 1b on the receiver 111b side, the tunnel current is increased and transfer recording is performed.

[0078] As described above, in the present reference example, S
The information is transmitted using the light emission phenomenon from the surface of the recording medium 1 in the TM configuration, and at the same time, the information is received by irradiating the recording medium 1b in the voltage applied state with the STM configuration. An information processing device capable of optical communication has been realized.

[0079]

As described above, according to the present invention, large-capacity, high-density recording, reproduction, and erasing having a recording density on the order of nm, which has not been achieved by an information processing apparatus using a conventional optical memory, can be performed. In addition, an information processing apparatus capable of transferring information at a higher speed or two-way communication using an optical fiber has been realized.

[Brief description of the drawings]

FIG. 1 illustrates a schematic configuration of an information processing apparatus according to the present invention .
FIG .

FIG. 2 is an example of a configuration diagram of a first information processing apparatus of the present invention.

FIG. 3 is a diagram illustrating a decoupling unit that converts surface plasmons into light.

FIG. 4 illustrates a schematic configuration of an information processing apparatus according to the present invention .
FIG .

FIG. 5 is a diagram showing an emission spectrum of ZnS: Cu, Cl.

FIG. 6 is a diagram for explaining a process of writing information.

FIG. 7 is a diagram showing an emission spectrum of ZnS: Mn, Cl.

FIG. 8 is a diagram showing an emission spectrum of a mixed crystal phosphor of ZnS and CdS.

FIG. 9 is an example of a configuration diagram of a third information processing apparatus of the present invention.

FIG. 10 is a main configuration diagram showing another aspect of the third information processing apparatus of the present invention.

FIG. 11 is a configuration diagram of a bidirectional optical amplifier.

FIG. 12 is a diagram for explaining the principle of writing on a recording medium by assist light.

[Explanation of symbols]

Reference Signs List 1, 1b Recording medium 2, 2b Planar electrode 3, 3b Planar electrode forming substrate 4 Light emitting state 5, Light detecting means 6, 6b Probe electrode 7, 7b Z-direction movable piezoelectric piezoelectric actuator 8, 8b, 9, 9b X, Y Directionally movable piezo piezoelectric actuator 10, 10b Tunnel current detecting means 11, 11b Voltage applying means 12 Low pass filter 13 Band pass filter 14 Microcomputer 15 Amplifier 17 Write state 18 Non-write state 19 Tunnel current 31 Includes ions that change light emitting state Thin film 32 Partition layer 33 Electroluminescent thin film 34 Cantilever 35 Laser light source 36 Optical displacement detecting means 37 XYZ direction driving device 38 Wavelength filter 41 Grating pitch 71 Cu ion 101,102 Optical fiber 103 Optical amplification Unit 104 Information receiving unit 105 Light detecting means 106 Slit 111a Transmitter 111b Receiver 112a, 112b, 113 Optical fiber 114a, 114b Bidirectional optical amplifying unit 115 Assist light 121a, 121b Infrared laser 122a, 122b, 123a, 123b Photodetector 124a , 124b Light irradiation means 125a, 125b, 126a, 126b Light distributor

────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Etsuro Kishi 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-3-119536 (JP, A) JP-A-4 -1950 (JP, A) JP-A-3-100945 (JP, A) JP-A-63-63143 (JP, A) JP-A-2-98849 (JP, A) (58) Fields investigated (Int. . ^7, DB name) G11B 9/00 G11B 11/00

Claims (9)

(57) [Claims] To 1. A planar electrode having a recording medium, an information processing apparatus disposed facing the probe electrode, said recording medium
A thin film for electroluminescence, and light emission of the thin film for electroluminescence.
A stack of thin films containing ions that change the state
Used, means for applying a voltage between the planar electrode and the probe electrode, voltage is the result excitation that is applied between the planar electrodes and the probe electrodes, the light for detecting the light emission state of said recording medium An information processing apparatus comprising: a detection unit. 2. The information according to claim 1 , wherein ions that change the light emitting state of the electroluminescent thin film are injected into the electroluminescent thin film by applying a voltage between the plane electrode and the probe electrode. Processing equipment. As 3. A thin film containing an ion of changing the light emission state of the electric field light emitting thin film, according to claim 1 or 2 gall is characterized by using a thin film containing the active agent with the electric field light-emitting thin film
The information processing device according to any one of the preceding claims. 4. The method according to claim 1, wherein the ions that change the light emitting state of the electroluminescent thin film are ions that form a mixed crystal with the components of the electroluminescent thin film .
An information processing device according to claim 1. 5. A field emission thin film, any of claims 1 to 4, characterized in that a barrier layer between the thin film containing ions to change the light emission state of the electric field light-emitting thin film one
The information processing device according to item . 6. The information processing apparatus according to claim 1 , wherein a noble metal electrode is used as the plane electrode. 7. The information processing apparatus according to claim 6 , wherein one of an Au electrode and an Ag electrode is used as the noble metal electrode. 8. A light detecting means, according to claim 1 to 7, characterized by further connecting the information transfer optical fiber Neu
The information processing device according to any one of the preceding claims. 9. An information processing apparatus comprising a plurality of information processing apparatuses according to claim 1 connected by using an optical fiber.