JP2999941B2 - Manufacturing method of contact rubber - Google Patents
Manufacturing method of contact rubberInfo
- Publication number
- JP2999941B2 JP2999941B2 JP8222495A JP8222495A JP2999941B2 JP 2999941 B2 JP2999941 B2 JP 2999941B2 JP 8222495 A JP8222495 A JP 8222495A JP 8222495 A JP8222495 A JP 8222495A JP 2999941 B2 JP2999941 B2 JP 2999941B2
- Authority
- JP
- Japan
- Prior art keywords
- conductive
- rubber
- contact
- layer
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920001971 elastomer Polymers 0.000 title claims description 99
- 239000005060 rubber Substances 0.000 title claims description 99
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 229920002379 silicone rubber Polymers 0.000 claims description 23
- 239000004945 silicone rubber Substances 0.000 claims description 23
- 239000000853 adhesive Substances 0.000 claims description 13
- 230000001070 adhesive effect Effects 0.000 claims description 13
- 238000000465 moulding Methods 0.000 claims description 13
- 239000006229 carbon black Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 claims description 6
- 239000010956 nickel silver Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 23
- 238000004080 punching Methods 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 239000002994 raw material Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000003431 cross linking reagent Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
- Manufacture Of Switches (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は電話、計算機、AV機器等
の電子機器の入力用の接点ゴムとして用いられる接点ゴ
ムの製造方法に係るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a contact rubber used as an input contact rubber for an electronic device such as a telephone, a computer and an AV device.
【０００２】[0002]
【従来の技術】上記電子機器の入力装置として用いられ
ている接点ゴムａの一般的な形態は、図６に示すよう
に、上方に膨出するキートップ部ｂと、薄肉部ｃを介し
て底面周側方に延出するベース部ｄと、キートップ部ｂ
の底面中央部より下方に突出し、先端に導電接点部ｅを
有する可動凸部ｆとからなっている。操作者がキートッ
プ部ｂの天面を押圧すると、薄肉部ｃが屈従してキート
ップ部ｂを下方に押し下げ、可動凸部ｆ先端の導電接点
部ｅが、（図示しない）回路基板上に設けられた固定接
点部と接触し、回路が閉じる。操作者がキートップ部ｂ
の天面より指を離すと、薄肉部ｃが旧に復してキートッ
プ部ｂを押し上げ、導電接点部ｅが固定接点部と離れる
ため、回路が開く。2. Description of the Related Art As shown in FIG. 6, a general form of a contact rubber a used as an input device of the above-mentioned electronic equipment is a key top portion b which bulges upward and a thin portion c. A base part d extending to the side of the bottom surface and a key top part b
And a movable projection f having a conductive contact portion e at the tip. When the operator presses the top surface of the key top portion b, the thin portion c follows and pushes down the key top portion b, and the conductive contact portion e at the tip of the movable convex portion f is placed on a circuit board (not shown). The circuit comes into contact with the provided fixed contact portion, and the circuit is closed. The operator operates the key top b
When the finger is released from the top surface, the thin portion c is restored to the old one and pushes up the key top portion b, and the conductive contact portion e is separated from the fixed contact portion, so that the circuit is opened.
【０００３】一般に接点ゴム本体（接点ゴムａより導電
接点部ｅのみを除いたゴム状部分全体）は天然ゴムや各
種合成ゴムあるいは熱可塑性エラストマー等に代表され
る絶縁性のゴム状弾性体を原料とし、圧縮成形、射出成
形等の様々な方法で加工することにより製造される。ゴ
ム状弾性体の内では、電気絶縁性、耐寒性、耐熱性、精
密成形性、反ぱつ弾性等、接点ゴムに要求される好まし
い特性を有するシリコーンゴムの使用されることが多
い。接点ゴム本体への導電接点部ｅの形成方法には、
あらかじめ接点ゴム本体のみを製造しておき、導電接点
部ｅの形成部分に導電性インキを、スクリーン印刷法な
どの方法により配し、これを硬化させて設ける方法と、
金属板にゴム層を積層した積層体を所定形状に打ち抜
いて導電チップを製造した後、接点ゴム本体の形状に対
応した成形部を有する金型の導電チップ形成部分に、導
電チップを金属面が金型面に接するように装着し、シリ
コーンゴムを金型中に充填して、接点ゴム本体と導電チ
ップとを加熱硬化一体化させる方法（特開昭63-96822号
公報参照）とがある。しかし、上記の導電性インキの
印刷による方法では、導電接点部ｅを厚くできないこと
から、長期間の使用や低抵抗値対応の用途に適さない。
これに比べての導電チップを用いて接点部を形成する
方法は、導電接点部ｅを任意の厚さにできるほか片側が
金属面のため、低抵抗値対応の用途に適している。[0003] In general, the contact rubber body (the entire rubber-like portion excluding only the conductive contact portion e from the contact rubber a) is made of an insulating rubber-like elastic material represented by natural rubber, various synthetic rubbers or thermoplastic elastomers. It is manufactured by processing by various methods such as compression molding and injection molding. Among the rubber-like elastic bodies, silicone rubber having preferable characteristics required for contact rubber, such as electrical insulation, cold resistance, heat resistance, precision moldability, and resilience, is often used. The method of forming the conductive contact portion e on the contact rubber body includes:
A method in which only the contact rubber body is manufactured in advance, and a conductive ink is disposed on a portion where the conductive contact portion e is to be formed by a method such as a screen printing method, and this is cured and provided.
After punching a laminate obtained by laminating a rubber layer on a metal plate into a predetermined shape to produce a conductive chip, a conductive chip is formed on a conductive chip forming portion of a mold having a molded portion corresponding to the shape of the contact rubber body. There is a method of mounting the contact rubber body in contact with the mold surface, filling the mold with silicone rubber, and heat-curing and integrating the contact rubber body and the conductive chip (see JP-A-63-96822). However, the method using the printing of the conductive ink described above is not suitable for a long-term use or a use corresponding to a low resistance value because the conductive contact portion e cannot be thickened.
On the other hand, the method of forming a contact portion by using a conductive chip is suitable for a low resistance value application because the conductive contact portion e can have an arbitrary thickness and one side is a metal surface.
【０００４】[0004]
【発明が解決しようとする課題】従来の接点ゴムの製造
に用いられる導電チップの部分拡大縦断面図を図７に示
す。この導電チップｇは洋白ｈにニッケルメッキ層ｉと
金メッキ層ｊとを順次設けてなる導電層ｋと絶縁ゴム層
ｍとから構成されていて、導電層ｋ側表面も絶縁ゴム層
ｍ側表面も共にほぼ平滑になっている。この導電チップ
ｇを同様の構成からなるシート状積層体ｎから得る過程
を図８（ａ）〜（ｆ）により工程順に示す。シート状積
層体ｎからの導電チップｇの打抜きには、導電チップｇ
とほぼ同じ外形、大きさの筒状の刃ｐを備えた打抜き治
具または装置が用いられる。ところが、この打抜き加工
を連続して行うと、図８（ｃ）、（ｄ）に示すように、
先に打抜いた導電チップｇの絶縁ゴム層ｍ側表面に、続
いて打抜いた導電チップｇの導電層ｋ側表面が貼着し、
次々と図８（ｅ）に示す状態に積重していって、図８
（ｆ）に示すようなブロック体ｑを形成する。FIG. 7 is a partially enlarged longitudinal sectional view of a conductive chip used for manufacturing a conventional contact rubber. The conductive chip g is composed of a conductive layer k in which a nickel plating layer i and a gold plating layer j are sequentially provided on a nickel silver h and an insulating rubber layer m. The surface of the conductive layer k is also the surface of the insulating rubber layer m. Both are almost smooth. The process of obtaining the conductive chip g from the sheet laminate n having the same configuration is shown in the order of steps with reference to FIGS. The punching of the conductive chips g from the sheet laminate n is performed by using the conductive chips g.
A punching jig or device having a cylindrical blade p having substantially the same outer shape and size as that of the above is used. However, when this punching process is performed continuously, as shown in FIGS. 8 (c) and 8 (d),
The surface of the conductive chip g that was punched earlier is adhered to the surface of the insulating rubber layer m that was previously punched, and the surface of the conductive chip g that was subsequently punched is the conductive layer k.
8 (e).
A block body q as shown in FIG.
【０００５】このため、この導電チップｇを成形金型の
接点部形成用掘り込み部に装着して接点ゴムａを製造す
る際に、本来ならば１個の導電チップｇだけが上記掘り
込み部ｒに装着されるところを、図９（ａ）、（ｂ）に
示すように、複数の導電チップｇの積重されたブロック
体ｑが装着されることになり、これが未加硫ゴムと一体
化する際に、その一部が樹脂の流れで分離して、本来は
絶縁性でなければならない部分を導電性にしてしまった
り、接点ゴム形成後に、ブロック体ｑを形成する導電チ
ップｇの一部が脱落し、設計通りのストロークの接点ゴ
ムａが得られなくなる。そこで、このような不利を発生
させないために、上記掘り込み部ｒに導電チップｇを装
填する際に、ブロック体ｑを分解する作業を行うと、金
型温度が下がって半加硫状態の接点ゴムができたり、加
工時間が長くなったりした。したがって、本発明の目的
は、導電チップを成形金型の接点部形成用掘り込み部に
装着して接点ゴムを製造する際に、導電チップが常に１
個づつ上記掘り込み部に装着できるようにした接点ゴム
の製造方法を提供するにある。For this reason, when this conductive chip g is mounted on the contact portion forming recess of the molding die to produce the contact rubber a, normally only one conductive tip g is originally formed by the above-described recess. 9 (a) and 9 (b), a block q in which a plurality of conductive chips g are stacked is mounted, and this is integrated with the unvulcanized rubber. At the time of formation, a part of the conductive chip g that forms the block body q after the contact rubber is formed is separated by the flow of the resin to make the part that should be originally insulative conductive. As a result, the contact rubber a having the designed stroke cannot be obtained. Therefore, in order to avoid such disadvantages, when the block body q is disassembled when the conductive chip g is loaded into the dug portion r, the mold temperature is lowered and the contact in the semi-vulcanized state is reduced. Rubber was formed and processing time was lengthened. Accordingly, an object of the present invention is to provide a method for manufacturing a contact rubber by mounting a conductive chip on a contact portion forming dug portion of a molding die.
An object of the present invention is to provide a method of manufacturing a contact rubber which can be individually mounted on the dug portion.
【０００６】[0006]
【課題を解決するための手段】本発明による接点ゴムの
製造方法は、表面に非粘着処理の施された絶縁ゴム層が
表面に非粘着処理の施されていない面で導電層に積層さ
れているシート状積層体を、所定形状に打抜いて導電チ
ップとし、この導電チップをその導電層が金型面に接す
るように成形金型に装入し、未加硫ゴムを成形金型の導
電チップ上に充填し、一体成形することを特徴とするも
のである。また、本発明による製造方法では、絶縁ゴム
層がシリコーンゴムからなり、導電層が、カーボンブラ
ックを30〜75重量％含むシリコーンゴムか、洋白にニッ
ケルメッキおよび金メッキを順次施したものか、のいず
れかからなるものであること、絶縁ゴム層は、その表面
に 184.9nmと 253.7nmの波長の紫外線が積算光量 200〜
20,000mj/cm2の範囲で、放射照度 150mW/cm2未満で照射
するか、その表面に複数の凸を設けるかのいずれか、ま
たは両者を兼ねることにより、非粘着処理を施すことを
好適とする。According to a method of manufacturing a contact rubber according to the present invention, an insulating rubber layer having a surface subjected to a non-adhesive treatment is laminated on a conductive layer on a surface not subjected to the non-adhesive treatment. The sheet-like laminate is punched into a predetermined shape to form a conductive chip, and the conductive chip is inserted into a molding die such that the conductive layer is in contact with the mold surface, and the unvulcanized rubber is transferred to the conductive mold. It is characterized by being filled on a chip and integrally molded. Further, in the manufacturing method according to the present invention, whether the insulating rubber layer is made of silicone rubber and the conductive layer is silicone rubber containing 30 to 75% by weight of carbon black, or nickel white and gold plated sequentially on nickel silver The insulating rubber layer has an ultraviolet light with a wavelength of 184.9 nm and 253.7 nm on its surface.
In the range of 20,000mj / cm 2, or irradiated below irradiance 150 mW / cm 2, either providing a plurality of projections on its surface, or by serving as a both a suitably be subjected to non-adhesive treatment I do.
【０００７】以下、本発明を詳細に説明する。本発明に
よる接点ゴムの製造方法において、最初に準備するシー
ト状積層体は表面に非粘着処理の施された絶縁ゴム層が
導電層に積層されているものである。このシート状積層
体は、絶縁ゴム層がシリコーンゴムからなり、導電層
が、カーボンブラックを30〜75重量％含むシリコーンゴ
ムか、洋白にニッケルメッキおよび金メッキを順次施し
たものか、のいずれかからなるものであることが好まし
い。導電層はまた、銀粉やニッケル粉をシリコーンゴム
内に配合したものでもよい。シリコーンゴムへのカーボ
ンブラックの配合量は、導通機能を満たすために30重量
％を超えることが望ましく、また75重量％を超えると均
一にシリコーンゴム中に配合することが難しくなるた
め、30〜75重量％とするのがよい。シート状積層体の全
体の厚みは、得ようとする導電チップの厚みと等しけれ
ばよいことから、 0.3〜２mmの範囲であればよい。絶縁
ゴム層と導電層の厚さの比率には特に規定はないが、導
電層の厚みが厚いほど抵抗値が低く設定できるため、そ
の点に留意すればよい。Hereinafter, the present invention will be described in detail. In the method for manufacturing a contact rubber according to the present invention, the sheet-like laminate prepared first has an insulating rubber layer having a surface subjected to a non-adhesive treatment laminated on a conductive layer. In this sheet-like laminate, the insulating rubber layer is made of silicone rubber, and the conductive layer is made of silicone rubber containing 30 to 75% by weight of carbon black, or nickel white and gold plated sequentially on nickel silver. It is preferred that it consists of The conductive layer may be a mixture of silver powder and nickel powder in silicone rubber. The compounding amount of carbon black to the silicone rubber is desirably more than 30% by weight in order to satisfy the conduction function, and if it exceeds 75% by weight, it becomes difficult to uniformly blend the same in the silicone rubber. % By weight. The entire thickness of the sheet-shaped laminate may be equal to the thickness of the conductive chip to be obtained, and may be in the range of 0.3 to 2 mm. There is no particular limitation on the ratio of the thickness of the insulating rubber layer to the thickness of the conductive layer, but the thicker the conductive layer, the lower the resistance can be set.
【０００８】絶縁ゴム層の表面における非粘着処理は、
シート状積層体より導電チップを続けて打抜く際に、導
電チップの絶縁ゴム層面に、他の導電チップの導電層面
が接触して、両者が粘着一体化するのを防ぐためのもの
で、その時期は絶縁ゴム層と導電層との積層前、積層後
のいずれでも差し支えない。非粘着処理は、特には絶縁
性ゴム層がシリコーンゴムである場合に、 184.9nmと 2
53.7nmの波長の紫外線を、積算光量 200〜20,000mj/cm2
の範囲で、放射照度150mW/cm2未満で照射するか、その
表面に複数の凸を設けるかのいずれか、または両者を兼
ねることで行われる。非粘着処理方法を選択する場合の
留意点としては、導電層の導電機能や耐久性を失うよう
な処理を避けることである。一般に紫外線とは、広義に
は 100から 380nm（狭義には 200から 280nm）の範囲の
波長の光をいい、この照射により油分などの有機物質が
付着したガラス板や金属、セラミック板を洗浄できるこ
とはよく知られているが、本発明者らは上記の条件の紫
外線を、好ましくは酸素ガスの存在下で照射すると、シ
ート状積層体の絶縁ゴム層表面を劣化させることなく非
粘着性に改質できることを見出した。[0008] The non-adhesive treatment on the surface of the insulating rubber layer is as follows.
When continuously punching the conductive chip from the sheet-like laminate, to prevent the conductive rubber layer surface of the conductive chip is in contact with the conductive layer surface of the other conductive chip, and both are adhered and integrated. The timing may be before or after lamination of the insulating rubber layer and the conductive layer. Non-adhesive treatment is particularly effective when the insulating rubber layer is made of silicone rubber.
53.7nm wavelength ultraviolet light, integrated light amount 200 ~ 20,000mj / cm 2
Irradiation is performed at an irradiance of less than 150 mW / cm 2 , a plurality of projections are provided on the surface, or both are used. A point to keep in mind when selecting a non-adhesive treatment method is to avoid a treatment that loses the conductive function and durability of the conductive layer. Generally, ultraviolet light refers to light having a wavelength in the range of 100 to 380 nm in a broad sense (200 to 280 nm in a narrow sense). It is not possible to clean glass, metal, or ceramic plates to which organic substances such as oil have adhered by this irradiation. It is well known that the inventors of the present invention irradiate the ultraviolet light under the above conditions, preferably in the presence of oxygen gas, to a non-adhesive property without deteriorating the surface of the insulating rubber layer of the sheet laminate. I found what I could do.
【０００９】184.9nmと 253.7nmの波長の紫外線を単独
で時間をずらして照射しもよいが、作業環境と生産性を
考慮すると、同時に２種類の波長の紫外線を照射するの
が好ましい。これは波長 184.9nmの紫外線の吸収によ
り、空気中または酸素（Ｏ2 ）リッチな雰囲気または酸
素（Ｏ2 ）置換された雰囲気で、酸素（Ｏ2 ）が次のよ
うに反応し、オゾン（Ｏ3 ）を発生する。 Ｏ2 →Ｏ＋
Ｏ、 Ｏ＋Ｏ2 →Ｏ3これに対し、波長 253.7nmの紫外
線はその吸収によりオゾン（Ｏ3 ）が分解する。一般に
オゾン（Ｏ3 ）は極めて強力な酸化力を有し、人体に大
量に取り込まれると健康を害することもある。それ故、
空気中のオゾン濃度を必要以上に高めないために、波長
253.7nmの紫外線の照射は、波長 184.9nmの紫外線照射
とほぼ同時に、または波長 184.9nmの紫外線照射の後に
行うことが重要である。ここで発生するオゾン（Ｏ3 ）
の強力な酸化力が積層体の絶縁性ゴム層表面を改質する
と推定される。つまり、物理的には表面が粗くなって静
摩擦係数が小さくなり、化学的には炭素原子（Ｃ）が減
少して酸素原子（Ｏ）が増加する。なお、市販の低圧水
銀灯の場合は、波長 253.7nmの紫外線が90％、波長 18
4.9nmの紫外線が数％放射されるので、これを用いても
よい。Although the ultraviolet rays having the wavelengths of 184.9 nm and 253.7 nm may be independently irradiated at different times, it is preferable to simultaneously irradiate the ultraviolet rays having two wavelengths in consideration of the working environment and the productivity. This is because oxygen (O 2 ) reacts as follows in the air or an oxygen (O 2 ) rich atmosphere or an oxygen (O 2 ) substituted atmosphere due to absorption of ultraviolet light having a wavelength of 184.9 nm, and ozone (O 2 ) 3 ) Generate. O 2 → O +
O, O + O 2 → O 3 On the contrary, ozone (O 3 ) is decomposed by the absorption of ultraviolet light having a wavelength of 253.7 nm. In general, ozone (O 3 ) has an extremely strong oxidizing power, and may be harmful to human health if taken in large quantities by the human body. Therefore,
In order not to raise the ozone concentration in the air more than necessary,
It is important that the irradiation of the ultraviolet light of 253.7 nm is performed almost simultaneously with the irradiation of the ultraviolet light of 184.9 nm or after the irradiation of the ultraviolet light of 184.9 nm. Ozone generated here (O 3 )
It is presumed that the strong oxidizing power of this product modifies the surface of the insulating rubber layer of the laminate. That is, physically, the surface becomes rough and the coefficient of static friction decreases, and chemically, carbon atoms (C) decrease and oxygen atoms (O) increase. In the case of a commercially available low-pressure mercury lamp, 90% of ultraviolet light with a wavelength of
Since 4.9 nm ultraviolet light is emitted by several percent, it may be used.
【００１０】異なる２種類の波長の紫外線は絶縁性ゴム
層の表面に対して積算光量 200〜20,000mj/cm2の範囲で
照射するのが好ましい。これが 200mj/cm2未満では処理
効果が充分でなく、20,000mj/cm2を超えるとシート状積
層体が劣化してしまう。また、積算光量が 200〜20,000
mj/cm2の範囲であっても、放射照度が 150mW/cm2未満で
ないと適正でない。言い換えると、短時間で表面改質を
しようとしても、紫外線発光ランプとシート状積層体の
絶縁ゴム層の表面との距離が極めて小さいと、放射照度
が大きすぎて絶縁性ゴム層表面が劣化してしまう。放射
照度の下限値は実用面での処理時間、装置の許容サイズ
を考慮すると、10mW/cm2以上とすることが好ましい。紫
外線照射はバッチ処理用の炉タイプのものであってもよ
いし、コンベア方式の炉であってもよいが、紫外線がシ
ート状積層体の一部のみに集中照射されないように、シ
ート状積層体自体または紫外線発光ランプが一定速度で
移動できるような仕組みを持つものが望ましい。It is preferable to irradiate the surface of the insulating rubber layer with ultraviolet light having two different wavelengths in an integrated light amount range of 200 to 20,000 mj / cm 2 . If this is less than 200 mj / cm 2 , the treatment effect will not be sufficient, and if it exceeds 20,000 mj / cm 2 , the sheet-like laminate will deteriorate. In addition, the accumulated light amount is 200 to 20,000
Even in the range of mj / cm 2 , it is not appropriate unless the irradiance is less than 150 mW / cm 2 . In other words, even if the surface modification is performed in a short time, if the distance between the ultraviolet light-emitting lamp and the surface of the insulating rubber layer of the sheet-like laminate is extremely small, the irradiance is too large and the surface of the insulating rubber layer deteriorates. Would. The lower limit of the irradiance is preferably 10 mW / cm 2 or more in consideration of the practical processing time and the allowable size of the apparatus. The ultraviolet irradiation may be of a furnace type for batch processing, or may be of a conveyor type. However, the sheet-like laminate may be used so that the ultraviolet rays are not radiated to only a part of the sheet-like laminate. It is desirable to have a mechanism that allows the lamp itself or the ultraviolet light emitting lamp to move at a constant speed.
【００１１】このようにして得られたシート状積層体
は、次に所定形状に打抜いて導電チップとされるが、こ
の打抜き方法については特に制約はなく、従来通りの打
抜き装置、打抜き治具を用いればよい。その打抜き方向
については、導電層が金属メッキ層からなる場合に金属
メッキ面より打抜き刃が入るように打抜くと、絶縁性ゴ
ム層が打抜き後に広がるため、ここがいわばシールの役
割を果たし、接点部形成用掘り込み部と導電チップとの
間にすき間が生じないので、未加硫ゴムの流入を防止で
きる。得られる導電チップは一般的には円柱状のものを
主流とし、そのサイズは、径をφ２〜10mm、厚みを 0.3
〜２mmとするのが好ましい。図１（ａ）はこのようにし
て得られた導電チップ１の部分拡大縦断面図である。こ
の導電チップ１では導電層２として洋白３にニッケルメ
ッキ層４、金メッキ層５の順で積層したものを示してい
るが、この導電層２はカーボンブラック、銀などの導電
性粒子を混入させたものでもよい。また６は絶縁ゴム層
で、７はその紫外線照射面である。The sheet laminate thus obtained is then punched into a predetermined shape to form a conductive chip. There is no particular limitation on the method of punching, and a conventional punching apparatus and punching jig are used. May be used. Regarding the punching direction, if the conductive layer is made of a metal plating layer and punched so that the punching blade enters from the metal plating surface, the insulating rubber layer spreads after punching, so it plays a role as a seal, so to speak. Since there is no gap between the portion forming dug portion and the conductive chip, the inflow of unvulcanized rubber can be prevented. The obtained conductive chip is generally a columnar one, and its size is φ2 to 10 mm in diameter and 0.3 in thickness.
It is preferable to set it to 2 mm. FIG. 1A is a partially enlarged longitudinal sectional view of the conductive chip 1 thus obtained. In this conductive chip 1, a conductive layer 2 in which nickel plating layer 4 and gold plating layer 5 are laminated in this order on nickel silver 3 is shown. This conductive layer 2 is made by mixing conductive particles such as carbon black and silver. May be used. Reference numeral 6 denotes an insulating rubber layer, and reference numeral 7 denotes an ultraviolet irradiation surface.
【００１２】導電チップの絶縁ゴム層の表面を非粘着性
とする他の方法は、絶縁ゴム層表面に複数の凸を設ける
ことである。図１（ｂ）はこのようにして得られた導電
チップ11の部分拡大縦断面図で、絶縁ゴム層６の表面に
複数の凸８が設けられているほかは、図１（ａ）と同じ
構成である。凸のサイズと配置密度は、連続打抜き作業
の際に、先に打抜かれた導電チップの絶縁ゴム層面と、
続いて打抜かれた導電チップの導電層面とが、打抜きの
際の圧力で瞬間的に密着しても圧力開放状態では粘着し
ないように設定するのが望ましい。したがって、打抜き
圧力や導電層を構成する材質、作業場温度、作業場湿度
により、やや異なる。例えば、打抜き圧力が 100kg/c
m2、作業場温度が28℃、作業場湿度が60％RHの場合、絶
縁ゴム層がシリコーンゴムで導電層が金メッキ層からな
る導電チップに、高さ0.01〜１mmで直径が0.01〜 0.5mm
の円柱状の凸を、50〜 100個/cm2の配置密度で設けたと
ころ、効果が認められた。また、導電層表面がカーボン
ブラックを40重量％配合したシリコーンゴムの場合、高
さが0.05〜 1.5mmで直径が0.03〜0.8mmの円柱状の外形
を有する凸を、50〜 100個/cm2の配置密度で設けたとこ
ろ、導電チップ同士の粘着は見られなかった。Another method of making the surface of the insulating rubber layer of the conductive chip non-adhesive is to provide a plurality of protrusions on the surface of the insulating rubber layer. FIG. 1B is a partially enlarged longitudinal sectional view of the conductive chip 11 obtained as described above, and is the same as FIG. 1A except that a plurality of protrusions 8 are provided on the surface of the insulating rubber layer 6. Configuration. During the continuous punching operation, the size and arrangement density of the protrusions are determined by the insulating rubber layer surface of the conductive chip punched first,
Subsequently, it is desirable that the conductive layer surface of the punched conductive chip be set so that it does not stick in the pressure released state even if it comes into close contact with the conductive layer surface instantaneously with the pressure at the time of punching. Therefore, it differs slightly depending on the punching pressure, the material constituting the conductive layer, the workplace temperature, and the workplace humidity. For example, the punching pressure is 100kg / c
m 2 , when the workplace temperature is 28 ° C and the workplace humidity is 60% RH, a conductive chip consisting of an insulating rubber layer made of silicone rubber and a conductive layer made of a gold-plated layer has a height of 0.01 to 1 mm and a diameter of 0.01 to 0.5 mm
When the columnar projections were provided at an arrangement density of 50 to 100 / cm 2 , the effect was recognized. When the surface of the conductive layer is a silicone rubber containing 40% by weight of carbon black, 50 to 100 protrusions / cm 2 having a cylindrical outer shape with a height of 0.05 to 1.5 mm and a diameter of 0.03 to 0.8 mm are formed. When the conductive chips were provided at the arrangement density, no sticking between the conductive chips was observed.
【００１３】導電チップの絶縁ゴム層の表面に凸を設け
る方法の一例を、図２（ａ）〜（ｃ）により工程順に示
す。シート状積層体製造用金型21の絶縁ゴム層形成用金
型22面にあらかじめ凸に対応する形状の掘り込み23を設
けておき、導電部材装填用金型24面に導電部材25を装填
し［図２（ａ）］、次に未加硫の絶縁ゴム原料26を充填
し［図２（ｂ）］、加熱硬化して一体化すると、シート
状積層体27が得られる［図２（ｃ）］。掘り込み23の形
成は放電加工で行ってもよいし、均一に処理することに
留意すればブラスト加工等によってもよい。図３（ａ）
〜（ｆ）は絶縁ゴム層表面に凸を設けたシート状積層体
27から、従来と同様の筒状の刃28を用いた連続打抜き作
業により、多数の導電チップ29を得る過程を工程順に示
した縦断面図である。本発明の方法では従来法と異な
り、導電チップが積重してブロック体を形成することは
ない。なお、絶縁ゴム層の表面に凸を設けたものに、さ
らに前述の条件で紫外線照射を併用することもできる。An example of a method for forming a projection on the surface of the insulating rubber layer of the conductive chip will be described in the order of steps with reference to FIGS. A dug 23 having a shape corresponding to the convexity is provided in advance on the surface of the insulating rubber layer forming mold 22 of the sheet-shaped laminate manufacturing die 21, and the conductive member 25 is loaded on the conductive member loading die 24. [FIG. 2 (a)], and then the unvulcanized insulating rubber raw material 26 is filled [FIG. 2 (b)], and then cured by heating to obtain a sheet-like laminate 27 [FIG. 2 (c)]. )]. The formation of the digging 23 may be performed by electric discharge machining, or may be performed by blasting or the like if attention is paid to uniform processing. FIG. 3 (a)
(F) is a sheet-like laminate having a convex surface on the surface of the insulating rubber layer
27 is a longitudinal sectional view showing a process of obtaining a large number of conductive chips 29 from 27 in a continuous punching operation using a cylindrical blade 28 similar to the conventional one in the order of steps. In the method of the present invention, unlike the conventional method, the conductive chips are not stacked to form a block. It is to be noted that ultraviolet light irradiation can also be used in combination with the insulating rubber layer having a convex surface on the surface under the above-described conditions.
【００１４】非粘着処理を施した導電チップ29を、図４
（ａ）、（ｂ）の斜視図に示すように、接点ゴム製造用
金型（図示せず）の接点部形成用掘り込み部30に装填す
ると、導電チップ29は確実に一つづつ、所定の場所に装
填できる。図５（ａ）〜（ｃ）は、上記導電チップ29を
接点ゴム製造用金型に装入し、未加硫ゴムを成形金型の
導電チップ上に充填し、一体成形するまでの過程を、工
程順に縦断面図で示したものである。導電チップ29はそ
の導電層側が接点ゴム製造用金型31の接点部形成用掘り
込み部30面に接するように装入し［図５（ａ）］、次に
接点ゴム製造用金型31とキートップ部形成用金型32との
空隙33に未加硫のシリコーンゴム34を充填し［図５
（ｂ）］、加熱硬化すると、本発明による接点ゴム35が
得られる［図５（ｃ）］。The conductive chip 29 subjected to the non-adhesive treatment is
As shown in the perspective views of (a) and (b), when the contact tip is formed in the contact part forming digging part 30 of the contact rubber manufacturing mold (not shown), the conductive chips 29 are surely placed one by one. Can be loaded at FIGS. 5 (a) to 5 (c) show the process from loading the conductive chip 29 into a contact rubber manufacturing mold, filling unvulcanized rubber on the conductive chip of the forming mold, and integrally molding the same. , Are shown in longitudinal sectional views in the order of steps. The conductive chip 29 is inserted so that the conductive layer side is in contact with the contact portion forming digging portion 30 of the contact rubber manufacturing mold 31 [FIG. 5 (a)]. An unvulcanized silicone rubber 34 is filled in the gap 33 between the metal mold 32 for forming the key top and the mold [FIG.
(B)], when cured by heating, a contact rubber 35 according to the present invention is obtained [FIG. 5 (c)].
【００１５】[0015]
【作用】本発明の接点ゴムは導電チップの絶縁ゴム層表
面に非粘着処理が施されているため、連続打抜き加工を
しても、先に打抜いた導電チップと次に打抜いた導電チ
ップとが粘着することがない。Since the contact rubber of the present invention has a non-adhesive treatment on the surface of the insulating rubber layer of the conductive chip, even if the continuous punching process is performed, the conductive chip punched first and the conductive chip punched next. And does not stick.
【００１６】[0016]
実施例１ シート状積層体形成用金型の絶縁ゴム層形成側金型面に
ブラスト加工により、深さ0.05mm、直径 0.5mmの掘り込
みを形成した。このシート状積層体形成用金型を 175℃
に加熱しておき、洋白…JIS ２級（50μｍ）にニッケル
メッキ層（0.5 μｍ）を設け、さらに、そのニッケルメ
ッキ層の上に金メッキ層（10μｍ）を設けた導電部材
を、シート状積層体形成用金型の導電層形成用掘り込み
部に装填し、シリコーンゴムコンパウンド KE-941U（信
越化学工業社製、商品名） 100重量部に架橋剤 C-8（同
前）２重量部を配合してなる未加硫シリコーンゴム原料
を前記導電部材上に載置し、金型を閉じて加熱加圧し、
導電層と絶縁ゴム層とからなる厚さ0.55mmのシート状積
層体を得た。このシート状積層体を、その金メッキ層表
面から打抜き治具により打抜き、φ3.8mmの導電チップ
を得た。接点ゴム形成用金型をあらかじめ 175℃に加熱
しておき、金型の接点部形成用掘り込み部に、導電チッ
プを金メッキ面が金型に接するように装填し、シリコー
ンゴムコンパウンド KE-951U（同前）100 重量部に架橋
剤 C-8（同前）２重量部を配合してなる未加硫シリコー
ンゴム原料を、接点ゴム本体部形成用掘り込み部に充填
し、金型を閉じて加熱硬化し（硬化時間：３分）、導電
性接点部を有する接点ゴムを得た。この方法で 500ショ
ットの成形を行ったが、導電チップ同士が粘着している
ことがなかったため、導電性接点部形成に係る不具合は
生じなかった。なお、 500ショットの総合成形時間は
2,500分であった。Example 1 A digging having a depth of 0.05 mm and a diameter of 0.5 mm was formed by blasting on the surface of the mold for forming an insulating rubber layer of the mold for forming a sheet-like laminate. 175 ° C
A nickel-plated layer (0.5 μm) is provided on JIS Class 2 (50 μm), and a gold-plated layer (10 μm) is further provided on the nickel-plated layer. It is charged into the dug part for forming the conductive layer of the body forming mold, and 100 parts by weight of silicone rubber compound KE-941U (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.) and 2 parts by weight of the crosslinking agent C-8 (the same as above) The unvulcanized silicone rubber raw material thus compounded is placed on the conductive member, the mold is closed and heated and pressed,
A sheet-like laminate having a thickness of 0.55 mm and comprising a conductive layer and an insulating rubber layer was obtained. This sheet-like laminate was punched out from the surface of the gold plating layer by a punching jig to obtain a conductive chip having a diameter of 3.8 mm. The contact rubber forming die is heated to 175 ° C in advance, and a conductive chip is loaded into the dug portion for forming the contact portion of the die so that the gold-plated surface is in contact with the die, and a silicone rubber compound KE-951U ( Same as above) 100 parts by weight of cross-linking agent C-8 (same as above) and 2 parts by weight of uncured silicone rubber raw material are charged into the dug portion for forming the contact rubber main body, and the mold is closed. It was cured by heating (curing time: 3 minutes) to obtain a contact rubber having a conductive contact portion. 500 shots were formed by this method. However, since the conductive chips did not stick to each other, no problem related to the formation of the conductive contact portion occurred. The total molding time for 500 shots is
2,500 minutes.
【００１７】比較例１ 絶縁ゴム層形成部が平滑面であるシート状積層体形成用
金型を 175℃に加熱しておき、実施例１で用いた導電部
材とシリコーンゴム原料とを加熱硬化してシート状積層
体とした。このシート状積層体を実施例１と同様の方法
で打抜き加工し、導電チップを得た。次に、実施例１の
接点ゴム形成用金型を用い、実施例１と同様の作業を試
みたところ、導電チップ同士が２〜７個粘着したブロッ
ク体が多数生じた。これを手作業で可能な限り分離し、
所定の接点部形成用掘り込み部に装填し、未加硫ゴムと
一体成形を行った。この方法で 500ショット成形作業を
行ったが、良品率は70％で、不良品の内、10％は所定の
部位以外に導電部が形成されものであり、12％は接点ゴ
ムに導電チップが複数個重なって設けられ、その一部が
金型から離型後に分離してストローク不良となったもの
であった。また、残りの８％は接点ゴムの一部が未加硫
であったり発泡を生じたりしたものであった。 500ショ
ットの総成形時間は 3、540分であった。COMPARATIVE EXAMPLE 1 A mold for forming a sheet-like laminate having a smooth surface on which an insulating rubber layer was formed was heated to 175 ° C., and the conductive member used in Example 1 and a silicone rubber raw material were cured by heating. To form a sheet-like laminate. This sheet-like laminate was punched in the same manner as in Example 1 to obtain a conductive chip. Next, when the same operation as in Example 1 was attempted using the mold for forming a contact rubber of Example 1, a large number of block bodies having 2 to 7 conductive chips adhered to each other were generated. Separate this as much as possible by hand,
It was charged in a predetermined contact portion forming dug portion, and was integrally molded with unvulcanized rubber. A 500 shot molding operation was performed using this method, but the non-defective product rate was 70%. Of the defective products, 10% had a conductive part formed in a part other than the predetermined part, and 12% had a conductive chip in the contact rubber. A plurality of them were provided in an overlapping manner, and some of them were separated after releasing from the mold, resulting in poor stroke. In the remaining 8%, a part of the contact rubber was unvulcanized or foamed. The total molding time for 500 shots was 3,540 minutes.
【００１８】実施例２、比較例２、比較例３および比較
例４ シリコーンゴムコンパウンドKE-9510U（同前） 100重量
部、シリコーン生ゴムKE-78VBS（同前） 100重量部、架
橋剤C-8 （同前）２重量部およびカーボンブラック40重
量部を配合してなる導電性シリコーンゴムの未加硫原料
を用いてロールキュア装置により厚さ0.25mmの導電シー
トを製造した。この導電シートを比較例１で用いた 175
℃に加熱されたシート状積層体成形用金型の導電部材装
填用掘り込み部に装填後、KE-9710U（同前） 100重量部
とC-8２重量部とからなる未加硫のゴム原料を充填し、
加熱硬化してシート状積層体とした。これを複数個成形
した。次に、得られた複数個のシート状積層体につい
て、絶縁ゴム層表面に条件を種々変えて紫外線照射を行
なった。Example 2, Comparative Example 2, Comparative Example 3 and Comparative Example 4 100 parts by weight of silicone rubber compound KE-9510U (same as above), 100 parts by weight of silicone raw rubber KE-78VBS (same as before), crosslinking agent C-8 (Same as above) A conductive sheet having a thickness of 0.25 mm was produced by a roll curing apparatus using an unvulcanized raw material of a conductive silicone rubber obtained by mixing 2 parts by weight and 40 parts by weight of carbon black. This conductive sheet was used in Comparative Example 1 175
An unvulcanized rubber raw material consisting of 100 parts by weight of KE-9710U (same as above) and C-82 parts by weight, after being loaded into the dug portion for loading the conductive member of the sheet-like laminate molding die heated to 100 ° C. Filling,
It was cured by heating to obtain a sheet-like laminate. A plurality of these were molded. Next, with respect to the plurality of sheet laminates obtained, the surface of the insulating rubber layer was irradiated with ultraviolet rays under various conditions.
【００１９】これらシート状積層体を実施例１および比
較例１の方法と同じ条件で連続打抜きし、それぞれ絶縁
ゴム層の表面状態が異なる導電チップを得た。得られた
各導電チップを用いて、実施例１および比較例１と同じ
接点ゴム形成用金型で、同じ未加硫ゴム原料、同じ成形
条件にて、各500 ショットづつ成形したところ、積算光
量が 200〜20,000mj/cm2の範囲で、放射照度 150mW/cm2
未満で照射したシート状積層体を用いて導電接点部を設
けた接点ゴムは、良品率、生産性共に良好であったのに
対し、紫外線照射処理を施さなかったり、施しても積算
光量が 200mj/cm2未満であったシート状積層体を用いた
場合は、導電チップがブロック体を形成し易く、良品
率、生産性共に低かった。また、紫外線照射処理を施し
ても積算光量が20,000mj/cm2を超えたシート状積層体で
は、それ自体が劣化していたため、これを用いた接点ゴ
ムは製造できなかった。These sheet-like laminates were continuously punched under the same conditions as in Example 1 and Comparative Example 1 to obtain conductive chips having different surface states of the insulating rubber layer. Using each of the obtained conductive chips, using the same contact rubber forming mold as in Example 1 and Comparative Example 1, under the same unvulcanized rubber raw material and the same molding conditions, molding was performed for each 500 shots. Is in the range of 200 to 20,000 mj / cm 2 and the irradiance is 150 mW / cm 2
The contact rubber provided with the conductive contact portion using the sheet-like laminate irradiated with less than 100% was good in both the yield rate and the productivity, but it was not subjected to the UV irradiation treatment, or the integrated light amount was 200 mJ When a sheet-like laminate having a ratio of less than / cm 2 was used, the conductive chip was easy to form a block, and both the yield rate and the productivity were low. Further, in the case of a sheet-like laminate in which the integrated light amount exceeded 20,000 mj / cm 2 even after the ultraviolet irradiation treatment, the contact rubber using the laminate could not be produced because the laminate itself was deteriorated.
【００２０】[0020]
【表１】 [Table 1]
【００２１】[0021]
【発明の効果】本発明によれば低抵抗の導電性接点部を
有する接点ゴムを高い良品率で作業性よく製造できる。According to the present invention, a contact rubber having a low-resistance conductive contact portion can be manufactured at a high yield rate with good workability.
【図１】（ａ）、（ｂ）はいずれも本発明の接点ゴムの
製造方法で用いられる導電チップの一例についての部分
拡大縦断面図である。FIGS. 1A and 1B are partially enlarged longitudinal sectional views of an example of a conductive chip used in a method of manufacturing a contact rubber according to the present invention.
【図２】（ａ）〜（ｃ）はいずれも本発明で用いられる
シート状積層体の製造方法を工程順に示した縦断面図で
ある。FIGS. 2A to 2C are longitudinal sectional views showing a method of manufacturing a sheet-like laminate used in the present invention in the order of steps.
【図３】（ａ）〜（ｆ）はそれぞれ本発明で用いられる
導電チップについて、同様の構成のシート状積層体から
得る過程の一例を工程順に示した縦断面図である。FIGS. 3A to 3F are longitudinal sectional views showing, in the order of steps, an example of a process of obtaining a conductive chip used in the present invention from a sheet laminate having a similar configuration.
【図４】（ａ）および（ｂ）はそれぞれ本発明で用いら
れる導電チップの、接点ゴム形成用掘り込み部への装填
前後の状態を示す斜視図である。FIGS. 4A and 4B are perspective views respectively showing states before and after loading of a conductive chip used in the present invention into a contact rubber forming dug portion.
【図５】（ａ）〜（ｃ）はそれぞれ本発明で用いられる
導電チップと接点ゴム本体との一体化作業を工程順に示
す縦断面図である。5 (a) to 5 (c) are longitudinal sectional views showing the steps of integrating the conductive chip and the contact rubber body used in the present invention in the order of steps.
【図６】従来の接点ゴムの縦断面図である。FIG. 6 is a longitudinal sectional view of a conventional contact rubber.
【図７】従来の接点ゴムの製造に用いられる導電チップ
の部分拡大縦断面図である。FIG. 7 is a partially enlarged longitudinal sectional view of a conductive chip used for manufacturing a conventional contact rubber.
【図８】（ａ）〜（ｆ）はそれぞれ従来法で用いられる
導電チップについて、同様の構成のシート状積層体から
得る過程を工程順に示した縦断面図である。FIGS. 8A to 8F are longitudinal sectional views showing a process of obtaining a conductive chip used in a conventional method from a sheet laminate having a similar configuration in the order of steps.
【図９】（ａ）および（ｂ）はそれぞれ従来の導電チッ
プの、接点ゴム形成用掘り込み部への装填前後の状態を
示す斜視図である。9 (a) and 9 (b) are perspective views showing states of a conventional conductive chip before and after loading into a contact rubber forming dug portion, respectively.
１、11‥導電チップ、 ２‥導電層、
３‥洋白、 ４‥ニッケルメッ
キ層、５‥金メッキ層、 ６‥絶縁ゴ
ム層、７‥紫外線照射面、 ８‥凸、21
‥シート状積層体製造用金型、 22‥絶縁ゴム層形成
用金型、23‥掘り込み、 24‥導電
部材装填用金型、25‥導電部材、
26‥絶縁ゴム原料、27‥シート状積層体、
28‥筒状の刃、29‥導電チップ、
30‥接点部形成用掘り込み部、31‥接点ゴム製造用金
型、 32‥キートップ部形成用金型、33‥空
隙、 34‥未加硫のシリコーン
ゴム、35‥接点ゴム。1, 11 ‥ conductive chip, 2 ‥ conductive layer,
3 ‥ white, 4 ‥ nickel plated layer, 5 ‥ gold plated layer, 6 ‥ insulating rubber layer, 7 ‥ ultraviolet irradiation surface, 8 ‥ convex, 21
‥ Mold for manufacturing sheet laminate, 22 ‥ Mould for forming insulating rubber layer, 23 ‥ Dug, 24 ‥ Mold for loading conductive member, 25 ‥ Conductor member,
26 ‥ insulating rubber raw material, 27 ‥ sheet laminate,
28 ‥ cylindrical blade, 29 ‥ conductive tip,
30 ‥ dug part for forming contact part, 31 ‥ die for making contact rubber, 32 ‥ die for forming key top part, 33 ‥ void, 34 ‥ unvulcanized silicone rubber, 35 ‥ contact rubber.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) B29C 33/12 - 33/18 H01H 11/04 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) B29C 33/12-33/18 H01H 11/04
Claims (3)
表面に非粘着処理の施されていない面で導電層に積層さ
れているシート状積層体を、所定形状に打抜いて導電チ
ップとし、この導電チップをその導電層側が金型面に接
するように成形金型に装入し、未加硫ゴムを成形金型の
導電チップ上に充填し、一体成形することを特徴とする
接点ゴムの製造方法。1. A sheet-like laminate in which an insulating rubber layer having a surface subjected to a non-adhesive treatment is laminated on a conductive layer on a surface where the surface is not subjected to the non-adhesive treatment is punched into a predetermined shape to form a conductive material. A chip, and loading the conductive chip into a molding die such that the conductive layer side is in contact with the mold surface, filling the unvulcanized rubber on the conductive chip of the molding die, and integrally molding. Manufacturing method of contact rubber.
電層が、カーボンブラックを30〜75重量％含むシリコー
ンゴムか、洋白にニッケルメッキおよび金メッキを順次
施したものか、のいずれかからなる、請求項１記載の接
点ゴムの製造方法。2. The insulating rubber layer is made of silicone rubber, and the conductive layer is made of either silicone rubber containing 30 to 75% by weight of carbon black, or nickel silver and gold plated sequentially on nickel silver. A method for producing a contact rubber according to claim 1.
53.7nmの波長の紫外線が積算光量 200〜20,000mj/cm2の
範囲で、放射照度 150mW/cm2未満で照射されるか、複数
の凸が設けられるかのいずれか、または両者を兼ねるこ
とにより、非粘着処理が施される、請求項１または２の
いずれかに記載の接点ゴムの製造方法。3. The insulating rubber layer has a surface of 184.9 nm and a thickness of 24.9 nm.
Range ultraviolet light of the integrated light quantity 200~20,000mj / cm 2 at a wavelength of 53.7Nm, or is irradiated less than irradiance 150 mW / cm 2, either a plurality of convex are provided, or by serving as a both The method for producing a contact rubber according to claim 1, wherein a non-adhesive treatment is performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8222495A JP2999941B2 (en) | 1995-04-07 | 1995-04-07 | Manufacturing method of contact rubber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8222495A JP2999941B2 (en) | 1995-04-07 | 1995-04-07 | Manufacturing method of contact rubber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08276435A JPH08276435A (en) | 1996-10-22 |
| JP2999941B2 true JP2999941B2 (en) | 2000-01-17 |
Family
ID=13768445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8222495A Expired - Fee Related JP2999941B2 (en) | 1995-04-07 | 1995-04-07 | Manufacturing method of contact rubber |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2999941B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11238423A (en) | 1998-02-20 | 1999-08-31 | Porimatec Kk | Contact key switch and its manufacture |
| CN102376484B (en) * | 2011-07-18 | 2014-02-12 | 健雄职业技术学院 | A kind of membrane basis point electrode and preparation method thereof |
| GB201506589D0 (en) | 2015-04-16 | 2015-06-03 | Dow Corning | Surface modifications of silicones |
| DE112017005099T5 (en) * | 2016-10-07 | 2019-08-29 | Shin-Etsu Polymer Co., Ltd. | Contact element; Method for producing a contact element and push-button switch element with a contact element |
-
1995
- 1995-04-07 JP JP8222495A patent/JP2999941B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08276435A (en) | 1996-10-22 |
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