JP2998870B2 - Thin film formation method and thin film growth apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for growing a thin film of ceramics and the like having a suction or filter electrode and effective for growing a thin film having excellent uniformity and coverage.

[0002]

2. Description of the Related Art In recent years, research and development for realizing new functions by growing a ceramic thin film has been advanced. For this type of thin film growth, sputtering, MOCVD
Method, the so-gel method, etc. have been mainly used, but from the viewpoint of excellent controllability of the stoichiometric composition of the film, fine particles having the composition of the thin film are adhered to the substrate and thinned after heat treatment. Attempts to do so have received attention. Conventionally, this type of growth apparatus generally has a configuration as shown in FIG.
In FIG. 2, reference numeral 1 denotes a atomization chamber, 2 denotes a growth chamber, 3 denotes a substrate, 4 denotes an ejection port, 5 denotes coarse particles, 6 denotes fine particles, 7 denotes an exhaust pump, and 8 denotes a carrier gas. Hereinafter, the configuration will be described with reference to the drawings.

[0003] As shown in the figure, the apparatus comprises a micronization chamber 1,
It comprises a growth chamber 2 for introducing a finely divided thin film source from a jet port 4 to grow a thin film on a substrate 3. The fine particles 6 introduced into the growth chamber 2 float in the growth chamber 2 and then adhere to and deposit on the substrate 3. After deposition to a predetermined thickness, the substrate 3
Is subjected to an annealing treatment at a high temperature and crystallized to form a ceramic thin film.

[0004]

In such a conventional thin film growth apparatus, the fine particles 6 reach the substrate 3 by utilizing only the kinetic energy when the fine particles 6 are jetted into the growth chamber 2, and the fine particles 6 reach the surface of the substrate 3. In order to adhere, the ejection port 4 is
It had to be installed nearby. As a result, as shown in FIG.
Is also likely to adhere to the substrate 3, and because it moves freely and adheres to the surface of the substrate 3, it is difficult to secure the coverage at the uneven portions 9 on the surface and to secure uniformity over the entire surface of the substrate 3. There were challenges.

An object of the present invention is to provide a thin film growth apparatus capable of obtaining a ceramic thin film having few defects in a film and having excellent coverage and uniformity of an uneven portion. It is.

[0006]

[MEANS FOR SOLVING THE PROBLEMS] To achieve the above object
In addition, the invention according to claim 1 of the present invention uses the raw material of the thin film.
Fine particles as they are, and charge the fine particles to form a thin film growth chamber
And provided near the substrate in the thin film growth chamber.
The grid-shaped electrode has the opposite polarity to the charge of the fine particles.
A polarity voltage is applied to suck the fine particles, and the
Particles passing through the electrode in the form of
And then heat-treat to form a thin film
It is characterized by the following. Further, according to claim 2 of the present invention.
The thin film forming method according to claim 1, wherein
And crystallized by the heat treatment to form a ceramic thin film.
It is characterized in that it is realized.
Also, the thin film growth apparatus according to claim 3 of the present invention provides a thin film growth apparatus.
Raw material is charged into fine particles and charged
A fine-graining chamber having a fine-particle spout and a thin-film growth chamber.
Reduce the number of grid-shaped electrodes provided near the substrate
It is characterized by having at least. Also book
The thin film growth apparatus according to the fourth aspect of the present invention provides the thin film growth apparatus according to the third aspect.
In the thin film growth apparatus, the ejection port of the charged fine particles is located at the front.
Direction deviated from substrate surface installed in thin film growth chamber
It is characterized by being suitable for.

[0007]

According to the present invention, since the fine particles are accelerated by the suction electric field and the kinetic energy is increased by the above-mentioned structure, the coverage on the uneven portion of the substrate is improved, and the fine particles are attracted to the vicinity of the substrate by the suction electric field. The fine particle ejection port can be separated from the substrate, and the adhesion of coarse particles that cause film defects can be avoided.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIG. In FIG. 1, the same parts as those in FIG. That is, the feature of the present invention is that the grid-shaped suction electrode 10 is arranged near the substrate 3, and the ejection port 4 is arranged so as to have an angle of 90 degrees with respect to the substrate 3.

In the growth, the fine particles 6 generated in the atomization chamber 1 are sucked and ejected into the decompressed growth chamber 2 through the ejection port 4. Most of the fine particles 6 are charged by collision mutual friction when the fine particles 6 are atomized and when the fine particles 6 exit from the ejection port 4. A voltage having a polarity opposite to the charge of the fine particles 6 is applied to the suction electrode 10, and the ejected fine particles 6 are sucked to the substrate 3. The polarity of the charged particles 6 can be determined based on whether the particles 6 are attracted or repelled by the suction electrode 10. The reason why a voltage is not directly applied to the substrate 3 using the suction electrode 10 is that when a thin film is grown on a semiconductor integrated circuit substrate, there is a risk that the integrated circuit may be damaged by applying a high voltage. The suction electrode 10 is used for the purpose of avoiding such danger.

[0010] The coarse particles 5 emerging from the ejection port 4
Does not face the substrate 3, it does not jump directly onto the substrate 3, and even when approaching the vicinity of the substrate 3 due to the attractive electric field, it falls due to its large weight and reaches the substrate 3. do not do. As a result, the occurrence of defects in the film due to the coarse particles 5 can be extremely suppressed.

Although a part of the sucked fine particles 6 is adsorbed to the suction electrode 10, most of the sucked fine particles 6 can reach the substrate 3 by making the shape of the grid 6.
The fine particles 6 have high kinetic energy because they are accelerated by the electric field, and diffuse on the surface even after adhering to the substrate 3,
It is possible to improve the coverage by wrapping around the uneven portion. Further, since the collision energy with the substrate 3 is large, there is an advantage that the adhesion to the substrate 3 is also rich.

As described above, according to the apparatus for growing a ceramic thin film of the embodiment of the present invention, it is possible to grow a ceramic thin film having a small number of defects and a high coverage of uneven portions by the action of an attractive electric field.

[0013]

As is apparent from the above embodiments, according to the present invention, a large kinetic energy can be given to fine particles by disposing a suction electrode and applying a fine particle suction voltage thereto. , It is possible to grow a film with good coverage and good uniformity with excellent adhesion to the substrate,
Further, since the attachment of coarse particles can be suppressed, a thin film growth method and a thin film growth apparatus capable of greatly reducing defects in a film can be provided.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a thin film growth apparatus according to one embodiment of the present invention.

FIG. 2 is a schematic configuration diagram of a conventional thin film growth apparatus.

FIG. 3 is a schematic view showing a process in which fine particles adhere to a substrate in FIG. 2;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Micronization chamber 2 Growth chamber (thin film growth chamber) 3 Substrate 4 Spout 5 Coarse particles 6 Fine particles 7 Exhaust pump 8 Carrier gas 10 Suction electrode (grid-shaped electrode)

──────────────────────────────────────────────────の Continuing from the front page (72) Inventor Yasuhiro Uemoto 1006 Kadoma Kadoma, Osaka Prefecture Inside Matsushita Denshi Kogyo Co., Ltd. In-company (72) Inventor Akihiro Matsuda 1006 Kazuma Kadoma, Kadoma City, Osaka Prefecture Inside Matsushita Electronics Corporation (56) References JP-A-2-22465 (JP, A) JP-A-3-75360 (JP, A (58) Field surveyed (Int. Cl. ⁷ , DB name) C23C 24/00

Claims (4)

(57) [Claims] 1. A directly atomized raw material of the thin film, the fine particles are charged by injected into the thin film growth chamber, contrary to the fine particles of the charge on the electrodes of the grid shape provided near the substrate of the thin film growth chamber of the polarity of the voltage applied to attract the fine particles, the fine particles that have passed through the electrodes of the grid shape is deposited on the substrate surface, a thin film forming method comprising forming a thin film by the subsequent heat treatment to Rukoto. 2. The method according to claim 1, wherein
2. The thin film according to claim 1, wherein a thin film is formed.
Forming method. 3. When the raw material of the thin film is finely divided as it is
A thin film growth apparatus having at least a micronization chamber having a spout of charged fine particles charged together, and a grid-shaped electrode provided near a substrate installation portion in the thin film growth chamber. 4. The discharge port of the charged fine particles is provided with the thin film forming member.
Facing away from the surface of the board installed in the long room
Thin film growth apparatus according to claim 3, wherein the are.