JP2990295B2 - X-ray image sensor - Google Patents
X-ray image sensorInfo
- Publication number
- JP2990295B2 JP2990295B2 JP2221832A JP22183290A JP2990295B2 JP 2990295 B2 JP2990295 B2 JP 2990295B2 JP 2221832 A JP2221832 A JP 2221832A JP 22183290 A JP22183290 A JP 22183290A JP 2990295 B2 JP2990295 B2 JP 2990295B2
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- ray image
- fluorescent film
- ray
- phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000835 fiber Substances 0.000 claims description 18
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 7
- 238000004040 coloring Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 231100000987 absorbed dose Toxicity 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measurement Of Radiation (AREA)
- Instruments For Viewing The Inside Of Hollow Bodies (AREA)
- Luminescent Compositions (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、産業用，医療用等に使われているＸ線イメ
ージセンサーに関するものである。Description: TECHNICAL FIELD The present invention relates to an X-ray image sensor used for industrial use, medical use, and the like.
本発明は、固体撮像素子上に、ファイバー部材を設
け、そのファイバー部材上に蛍光膜を形成させたＸ線イ
メージセンサーにおいて、蛍光膜の材料としてアルカリ
金属（Li,Na,K）と希土類（La,Gd,Y）とネオジムのタン
グステン酸塩を用いることにより、ファイバー部材の光
学系Ｘ線着色損傷の影響を防いだものである。The present invention relates to an X-ray image sensor in which a fiber member is provided on a solid-state imaging device and a fluorescent film is formed on the fiber member. In an X-ray image sensor, alkali metal (Li, Na, K) and rare earth (La) are used as the material of the fluorescent film. , Gd, Y) and tungstate of neodymium prevent the fiber member from being affected by X-ray coloring damage of the optical system.
従来、Ｘ線イメージセンサーは、固体撮像素子上にフ
ァイバー部材を設け、その上に可視領域で発光する硫化
亜鉛等の蛍光膜を形成したものであった。Conventionally, an X-ray image sensor has a structure in which a fiber member is provided on a solid-state imaging device, and a fluorescent film such as zinc sulfide which emits light in a visible region is formed thereon.
上記のような蛍光膜では、可視領域で発光するため、
第２図の斜線部に示すようにＸ線着色損傷をおこし、光
学的性質がかなり劣化するという欠点を有しており、こ
の解決に課題があった。In the above fluorescent film, since light is emitted in the visible region,
As shown by the shaded portion in FIG. 2, X-ray coloring damage is caused, and the optical properties are considerably deteriorated.
上記課題点を解決するために、本発明においては、固
体撮像素子とファイバー部材と蛍光膜とからなるＸ線イ
メージセンサーで、蛍光体をRx（NdyLn1-y）（MO4）ｚ
（Ｒ＝Li,Na,KLn＝La,Gd,Y Ｍ＝W,Mo ｘ＝１のときｚ
＝２またはｘ＝５のときｚ＝4,0.1≦ｙ≦1.0）とするこ
とにより、ファイバー部材のＸ線着色損傷の影響を防ぐ
ものとした。ここで、固体撮像素子はCCD,フォトダイオ
ード等のいかなる固体撮像素子でもよい。また、ファイ
バー部材として、ファイバープレート，イメージバンド
ル等がある。In order to solve the above problem points, in the present invention, the X-ray image sensor comprising a solid-state imaging device and the fiber member and the phosphor layer, R x (Nd y Ln 1 -y) (MO 4) a phosphor z
(R = Li, Na, KLn = La, Gd, Y M = W, Mox = 1 when z = 1
= 2 or x = 5, z = 4, 0.1 ≦ y ≦ 1.0) to prevent the fiber member from being affected by X-ray coloring damage. Here, the solid-state imaging device may be any solid-state imaging device such as a CCD or a photodiode. The fiber member includes a fiber plate, an image bundle, and the like.
上記のような構成によれば，用いられる蛍光膜が900n
mから1100nmで発光を有するものであるため、蛍光膜を
透過したＸ線によるファイバー部材の着色損傷の影響を
防ぐことができる。According to the above configuration, the fluorescent film used is 900 n
Since it emits light from m to 1100 nm, it is possible to prevent the influence of coloring damage of the fiber member due to X-rays transmitted through the fluorescent film.
以下に本発明の実施例を図面に基づいて説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
〔第１実施例〕 第１実施例は、蛍光体としてNa5Nd（WO4）４を用いた
例を説明する。First Embodiment In a first embodiment, an example in which Na 5 Nd (WO 4 ) 4 is used as a phosphor will be described.
第１図に本発明のＸ線イメージセンサーの実施例を示
す断面図である。この図を用いて構成を説明する。構成
は固体撮像素子の画像入力面４上にファイバープレート
２が光学接着剤３を使って密着している。更に前記ファ
イバープレート２上に蛍光膜１を形成した構成であり、
一体化したＸ線イメージセンサーを作成した。FIG. 1 is a sectional view showing an embodiment of the X-ray image sensor of the present invention. The configuration will be described with reference to FIG. The configuration is such that the fiber plate 2 is in close contact with the image input surface 4 of the solid-state imaging device using the optical adhesive 3. Further, a fluorescent film 1 is formed on the fiber plate 2,
An integrated X-ray image sensor was created.
蛍光膜１は、材料と合成樹脂を混合したものを、ファ
イバープレート２上に10〜50ミクロンの厚さに均一に塗
布した。The fluorescent film 1 was obtained by uniformly mixing a material and a synthetic resin on the fiber plate 2 to a thickness of 10 to 50 microns.
この蛍光膜１を用いたＸ線イメージセンサーにおいて
104R/hで10h、Ｘ線照射後の出力強度は、従来の可視光
領域の蛍光体を用いたＸ線イメージセンサーの出力強度
を100とした場合700であった。In an X-ray image sensor using the fluorescent film 1
The output intensity after X-ray irradiation at 10 4 R / h for 10 hours was 700 when the output intensity of the conventional X-ray image sensor using a phosphor in the visible light region was set to 100.
〔第２〜第12実施例〕 第２〜第12実施例では、表に示す蛍光体を用いて第１
実施例と同様な方法でＸ線イメージセンサーを作成し
た。その蛍光膜１を用いたＸ線イメージセンサーの出力
強度を、従来の可視領域の蛍光体を用いたＸ線イメージ
センサーにおいて104R/hで10h、Ｘ線照射後の出力強度
を100として表に相対的に示す。[Second to twelfth embodiments] In the second to twelfth embodiments, the first to twelfth embodiments are performed using
An X-ray image sensor was prepared in the same manner as in the example. The output intensity of the X-ray image sensor using the fluorescent film 1 is expressed as 10 4 R / h for a conventional X-ray image sensor using a phosphor in the visible region, 10 h, and the output intensity after X-ray irradiation is 100. Relative to
〔第13実施例〕 第13実施例は、本発明のＸ線イメージセンサーの他の
実施例を第３図に基づいて説明する。 Thirteenth Embodiment A thirteenth embodiment will describe another embodiment of the X-ray image sensor of the present invention with reference to FIG.
構成は、第１実施例とほぼ同様であるが、第１実施例
では、ファイバー部材としてファイバープレート２を用
いたが、第３実施例ではイメージバンドル８を用いた。The configuration is almost the same as that of the first embodiment. In the first embodiment, the fiber plate 2 is used as the fiber member, but in the third embodiment, the image bundle 8 is used.
蛍光膜として、Na5Nd（WO4）４と合成樹脂を混合しイ
メージバンドル８上に10〜50ミクロンの厚さに塗布した
ものを用いた。As the fluorescent film, a film obtained by mixing Na 5 Nd (WO 4 ) 4 and a synthetic resin and applying the mixture on the image bundle 8 to a thickness of 10 to 50 μm was used.
この蛍光膜１をもちいたＸ線イメージセンサーにおい
て104R/hで10h、Ｘ線照射後の出力強度は、従来の可視
領域の蛍光体を用いたＸ線イメージセンサーの出力強度
を100とした場合、700であった。In the X-ray image sensor using the fluorescent film 1, 10 4 R / h for 10 hours, and the output intensity after X-ray irradiation was set to 100 as the output intensity of the conventional X-ray image sensor using a phosphor in the visible region. In that case, it was 700.
実施例では、蛍光膜のファイバー部材上への形成方法
として、合成樹脂を用いて塗布する方法を挙げたが、こ
の他、蒸着法，スパッタ法,CVD法などの薄膜形成法を用
いて形成することも可能である。In the embodiment, as a method of forming the fluorescent film on the fiber member, a method of applying the synthetic film using a synthetic resin is described. In addition, the fluorescent film is formed by using a thin film forming method such as an evaporation method, a sputtering method, and a CVD method. It is also possible.
本発明によれば、発光域が900nmから1100nmである蛍
光体を用いることにより、光学系のＸ線着色損傷の影響
がなくなり、従来の可視領域の蛍光体を用いた場合、10
4レントゲンであった吸収線量が108レントゲンと１万倍
寿命が長くなるＸ線イメージセンサーの達成を可能にし
た。According to the present invention, by using a phosphor having an emission range of 900 nm to 1100 nm, the influence of X-ray coloring damage to the optical system is eliminated, and when a conventional phosphor in the visible region is used, 10
4 Roentgen in which was absorbed dose was it possible to achieve X-ray image sensor 10 8 roentgen and 10,000 times life is prolonged.
第１図は、本発明の実施例を示す断面図，第２図は、フ
ァイバーにおける波長と透過率の変化を示す図，第３図
は、本発明のＸ線イメージセンサーの他の実施例を示す
断面図である。 １……蛍光膜 ２……ファイバープレート ３……光学接着剤 ４……固体撮像素子 ５……リードフレーム ６……基板 ７……Ｘ線照射による劣化部 ８……イメージバンドルFIG. 1 is a cross-sectional view showing an embodiment of the present invention, FIG. 2 is a view showing changes in wavelength and transmittance in a fiber, and FIG. 3 is another embodiment of the X-ray image sensor of the present invention. FIG. DESCRIPTION OF SYMBOLS 1 ... Fluorescent film 2 ... Fiber plate 3 ... Optical adhesive 4 ... Solid-state imaging device 5 ... Lead frame 6 ... Substrate 7 ... Degraded part by X-ray irradiation 8 ... Image bundle
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０４Ｎ 5/32 Ｈ０４Ｎ 5/32 (58)調査した分野(Int.Cl.6，ＤＢ名) G01T 1/20 G01T 1/00 H04N 5/32 C09K 11/78 G02B 23/26 G02B 6/02 ──────────────────────────────────────────────────続 き Continuation of the front page (51) Int.Cl. 6 identification code FI H04N 5/32 H04N 5/32 (58) Field surveyed (Int.Cl. 6 , DB name) G01T 1/20 G01T 1/00 H04N 5/32 C09K 11/78 G02B 23/26 G02B 6/02
Claims (1)
け、その上にRx（NdyLn1-y）（MO4）ｚ（Ｒ＝Li,Na,K
Ln＝La,Gd,Y Ｍ＝W,Mox＝１のときｚ＝２またはｘ＝５
のときｚ＝4,0.1≦ｙ≦1.0）のいずれか一種の蛍光膜を
形成させたことを特徴とするＸ線イメージセンサー。To 1. A on the solid-state image pickup device, the fiber member is provided, R x (Nd y Ln 1 -y) (MO 4) thereon z (R = Li, Na, K
Ln = La, Gd, Y M = W, Mox = 1, z = 2 or x = 5
Wherein x = 4, 0.1 ≦ y ≦ 1.0).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2221832A JP2990295B2 (en) | 1990-08-23 | 1990-08-23 | X-ray image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2221832A JP2990295B2 (en) | 1990-08-23 | 1990-08-23 | X-ray image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04104145A JPH04104145A (en) | 1992-04-06 |
| JP2990295B2 true JP2990295B2 (en) | 1999-12-13 |
Family
ID=16772894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2221832A Expired - Fee Related JP2990295B2 (en) | 1990-08-23 | 1990-08-23 | X-ray image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2990295B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102703071A (en) * | 2012-05-31 | 2012-10-03 | 中南大学 | Method for preparing lithium-based double tungstate/molybdate red phosphor |
-
1990
- 1990-08-23 JP JP2221832A patent/JP2990295B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04104145A (en) | 1992-04-06 |
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