JP2979558B2 - Method of forming multilayer wiring interlayer insulating film of semiconductor device - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a multilayer wiring interlayer insulating film of a semiconductor device, and more particularly, to a method of forming a multilayer wiring insulating film of a semiconductor device using a fluorine resin film as an interlayer insulating film. About the method.

[Conventional technology]

Conventionally, a wiring structure using a fluorine resin film as this kind of multilayer wiring interlayer insulating film is disclosed in, for example, Japanese Patent Application Laid-Open No. 62-196443.
As disclosed in Japanese Patent Application Laid-Open Publication No. H11-207, a wiring structure is formed by forming a fluorine resin film on a PSG film by a plasma vapor deposition method and then forming an aluminum wiring.

[Problems to be solved by the invention]

However, the above-described conventional interlayer insulating film structure has the following disadvantages.

That is, generally, since the fluorine resin film has a low adhesive strength to an inorganic insulating film such as a glass film, it is necessary to use an adhesive in order to bond them. Therefore, also in the above-described conventional technology, the fluorine resin film and the PS
It has the disadvantage that the adhesive strength with the G film is small and it is easily peeled off.

An object of the present invention is to provide a method for forming a multilayer wiring interlayer insulating film of a semiconductor device which has high adhesion strength to an inorganic insulating film such as a glass film and does not peel off.

[Means for solving the problem]

The method of forming a multilayer wiring interlayer insulating film of a semiconductor device according to the present invention comprises the steps of: forming an aromatic tetracarboxylic dianhydride represented by the following formula (1); a diamine represented by the formula (2); A solution comprising a polyamic acid silicon type intermediate formed by mixing and reacting with the amino silicon compound represented is coated on a substrate,
Forming a silicon-containing polyimide film by heat-treating at a temperature of ~ 200 ° C, subsequently forming a fluororesin film, and subsequently heat-treating at a temperature of 300-400 ° C. Features.

(In the formulas (1) to (3), R ¹ represents a tetravalent carbocyclic aromatic group, and R ² represents an aromatic group having 6 to 30 carbon atoms, or an aromatic group having 6 to 30 carbon atoms. The carbocyclic aromatic group, R ³ and R ⁴ are each independently an alkyl group having 1 to 6 carbon atoms or a phenyl group, and K is an integer of 1 ≦ K ≦ 3.) The resin film is made of polytetrafluoroethylene (chemical formula CF _{2 m} , m: a positive integer) and a tetrafluoroethylene-perfluoroalkylvinyl ether copolymer (chemical formula CF _{2 m} CFOR _n , m, n: a positive integer, R:
Alkyl group) and tetrafluoroethylene-hexafluoropropylene copolymer (chemical formula CF _{2 m} CF-CF
_{3 n, m, n:} positive integer) and tetrafluoroethylene - ethylene copolymer (Formula _{CF 2 m CH 2 n, m} , n: positive integer) and polyvinylidene fluoride (Formula CF ₂ -C
H _{2 m} , m: a positive integer) and a dispersion obtained by dispersing at least one type of fine particles of a fluorine compound in pure water or an organic solvent such as toluene or methanol. And heat-treated.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

In the following examples, a coating solution formed by mixing and reacting benzophenonetetracarboxylic dianhydride, diaminodiphenyl ether and P-aminophenyltrimethoxysilane was used as a coating solution for forming a silicon-containing polyimide film. In addition, dimethylacetamide was used as a solvent. Solid content concentration is 10% by weight, solution viscosity is 5cm-Poi
se.

The fluororesin film has a diameter of about 0.1 of a tetrafluoroethylene-perfluoroalkylvinyl ether copolymer.
A dispersion in which fine particles of about 0.5 μm were dispersed in pure water at a concentration of about 30% by weight was formed by spin coating and heat treatment.

FIG. 1 is a flowchart showing a method for forming an interlayer insulating film according to a first embodiment of the present invention.

In the first embodiment, first, a coating solution for forming a silicon-containing polyimide film is applied per minute on a substrate in which an aluminum film, a silicon oxide film, and a silicon nitride film having a thickness of about 1 μm are formed on a P-type silicon substrate. After spin coating at 4,000 rpm for 30 seconds, heat treatment is performed at 150 ° C. for 30 minutes in an oven in a nitrogen gas atmosphere to form a silicon-containing polyimide film having a thickness of about 0.2 μm.

Then, apply the above dispersion at 4,000 rpm for 30 minutes.
Spin coating for 80 seconds, 80 ° C, 1 in oven in nitrogen gas atmosphere
After heat treatment for 0 minutes to remove water, heat treatment is performed at 380 ° C. for 10 minutes in an electric furnace in a nitrogen gas atmosphere to melt and form a film.

When the adhesion of the fluororesin film formed as described above to the substrate was examined by a peeling test, no peeling was observed for all substrates.

In the second embodiment, the heat treatment temperature for forming the silicon-containing polyimide film was set to 100, 150, and 200 ° C., and after forming the fluorine resin film under the same conditions as in the first embodiment, the peeling test was performed for the adhesive strength with each substrate. Investigated by.

FIG. 2 is a characteristic diagram showing the peeling frequency of the fluorine resin film when the heat treatment temperature during the formation of the silicon-containing polyimide film according to the second embodiment of the present invention is changed.

As shown in FIG. 2, in the heat treatment at 100 to 200 ° C., the peeling frequency was 0%.

〔The invention's effect〕

As described above, the present invention provides a fluorine resin film and an inorganic insulating film or a metal wiring by interposing a silicon-containing polyimide film between the fluorine resin film and the surface of the inorganic insulating film or metal wiring. This has the effect of increasing the adhesive strength between them. Therefore, there is no peeling of the fluorine resin film in the manufacturing process of the semiconductor device, and the yield is improved.

Further, since the relative dielectric constant of the fluorine resin film is as small as 2.0 to 2.1, the signal delay time of the semiconductor device can be reduced, and therefore, the effect that the signal processing speed can be increased can be obtained.

[Brief description of the drawings]

FIG. 1 is a flow chart showing a method of forming an interlayer insulating film according to a first embodiment of the present invention, and FIG. 2 is a graph showing a heat treatment temperature during the formation of a silicon-containing polyimide film according to the second embodiment of the present invention. FIG. 7 is a characteristic diagram showing the frequency of peeling of the fluorine resin film at the time.

Claims (2)

(57) [Claims] A compound formed by reacting an aromatic tetracarboxylic dianhydride represented by the following formula (1) with a diamine represented by the formula (2) and an aminosilicon compound represented by the formula (3). A solution comprising a polyamic acid silicon type intermediate to be applied is applied on a substrate, and 10
Forming a silicon-containing polyimide film by heat-treating at a temperature of 0 to 200 ° C., subsequently forming a fluororesin film, and subsequently performing a heat treatment at a temperature of 300 to 400 ° C. A method for forming a multi-layer wiring interlayer insulating film of a semiconductor device, characterized by comprising: (In the formulas (1) to (3), R ¹ represents a tetravalent carbocyclic aromatic group, and R ² represents an aromatic group having 6 to 30 carbon atoms, or an aromatic group having 6 to 30 carbon atoms. The carbocyclic aromatic group, R ³ and R ⁴ are each independently an alkyl group having 1 to 6 carbon atoms or a phenyl group, and K is an integer of 1 ≦ K ≦ 3.) 2. The fluororesin film according to claim 1, wherein the polytetrafluoroethylene (chemical formula CF _{2 m} , m: a positive integer) and a tetrafluoroethylene-perfluoroalkylvinyl ether copolymer (chemical formula CF _{2 m} CFOR _n) , M, n: positive integers, R: alkyl group) and a tetrafluoroethylene-hexafluoropropylene copolymer (chemical formula CF _{2 m} C
_{F-CF 3 n, m,} n: positive integer) and tetrafluoroethylene - ethylene copolymer (Formula _{CF 2 m CH 2 n, m} , n:
Positive integer) and polyvinylidene fluoride (chemical formula CF
_2- CH _{2 m} , m: a positive integer) and a dispersion obtained by dispersing at least one type of fluorine compound fine particles in pure water or an organic solvent such as toluene or methanol. A method for forming a multi-layer wiring interlayer insulating film of a semiconductor device, wherein the method is formed by applying by a method or the like and performing heat treatment.