JP2954412B2 - Epoxy resin composition - Google Patents
Epoxy resin compositionInfo
- Publication number
- JP2954412B2 JP2954412B2 JP33828291A JP33828291A JP2954412B2 JP 2954412 B2 JP2954412 B2 JP 2954412B2 JP 33828291 A JP33828291 A JP 33828291A JP 33828291 A JP33828291 A JP 33828291A JP 2954412 B2 JP2954412 B2 JP 2954412B2
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- curing agent
- resin composition
- weight
- phenolic resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003822 epoxy resin Substances 0.000 title claims description 38
- 229920000647 polyepoxide Polymers 0.000 title claims description 38
- 239000000203 mixture Substances 0.000 title claims description 18
- 239000003795 chemical substances by application Substances 0.000 claims description 21
- 239000005011 phenolic resin Substances 0.000 claims description 20
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 15
- 229920001568 phenolic resin Polymers 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 7
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 5
- 239000011256 inorganic filler Substances 0.000 claims description 5
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims 2
- -1 2,3-epoxypropoxy Chemical group 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 230000035882 stress Effects 0.000 description 18
- 229910000679 solder Inorganic materials 0.000 description 14
- 239000000843 powder Substances 0.000 description 12
- 229920003986 novolac Polymers 0.000 description 10
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 238000005476 soldering Methods 0.000 description 9
- 238000000465 moulding Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- MEVBAGCIOOTPLF-UHFFFAOYSA-N 2-[[5-(oxiran-2-ylmethoxy)naphthalen-2-yl]oxymethyl]oxirane Chemical compound C1OC1COC(C=C1C=CC=2)=CC=C1C=2OCC1CO1 MEVBAGCIOOTPLF-UHFFFAOYSA-N 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000011342 resin composition Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000005350 fused silica glass Substances 0.000 description 4
- 239000012778 molding material Substances 0.000 description 4
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000004203 carnauba wax Substances 0.000 description 2
- 235000013869 carnauba wax Nutrition 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- XYXBMCIMPXOBLB-UHFFFAOYSA-N 3,4,5-tris(dimethylamino)-2-methylphenol Chemical compound CN(C)C1=CC(O)=C(C)C(N(C)C)=C1N(C)C XYXBMCIMPXOBLB-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体デバイスの表面
実装時における耐半田ストレス性及び耐湿性に優れた半
導体封止用エポキシ樹脂組成物に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation which has excellent resistance to soldering stress and moisture during surface mounting of a semiconductor device.
【0002】[0002]
【従来の技術】従来、集積回路、トランジスタ、ダイオ
ード等の半導体デバイスを熱硬化性樹脂で封止している
が、特に集積回路では耐熱性、耐湿性に優れたオルソク
レゾールノボラックエポキシ樹脂をノボラック型フェノ
ール樹脂で硬化させたエポキシ樹脂組成物が用いられて
いる。2. Description of the Related Art Conventionally, semiconductor devices such as integrated circuits, transistors and diodes are sealed with a thermosetting resin. In particular, in the case of integrated circuits, ortho-cresol novolak epoxy resin having excellent heat resistance and moisture resistance is made of a novolak type. An epoxy resin composition cured with a phenol resin is used.
【0003】しかし、近年の半導体デバイスの高集積
化、多機能化、合理化に伴うチップの大型化、パッケー
ジの小型化・薄型化の傾向は著しく、また実装合理化が
進み、従来のDIPタイプから表面実装型のパッケージ
であるSOJ、SOP、QFP等の比率が高まってい
る。大型チップを小型で薄いパッケージへ封入した表面
実装型パッケージは、半田付けの工程において急激に2
50℃以上の高温にさらされ、大きな応力を受け、パッ
ケージが割れたり、チップと封止樹脂の界面が剥離する
といった現象が発生し、半導体デバイスの信頼性に致命
的な問題となっている。そのため、これらの表面実装型
パッケージを封止するのに適した信頼性の高い封止用組
成物の開発が急がれている。However, in recent years, there has been a remarkable tendency to increase the size of chips and reduce the size and thickness of packages due to the high integration, multifunctionality, and rationalization of semiconductor devices. The ratio of SOJ, SOP, QFP, and the like, which are mountable packages, is increasing. A surface mount type package in which a large chip is enclosed in a small and thin package has a sudden
When exposed to a high temperature of 50 ° C. or more, a large stress is applied to the package, and a phenomenon such as cracking of the package or separation of the interface between the chip and the sealing resin occurs, which is a serious problem in the reliability of the semiconductor device. Therefore, development of a highly reliable sealing composition suitable for sealing these surface mount packages is urgent.
【0004】これらの問題を解決するために半田付け時
の熱衝撃を緩和する目的で、熱可塑性オリゴマーの添加
(特開昭62−115849号公報)や各種シリコーン
化合物の添加(特開昭62−115850公報、62−
116654号公報、62−128162号公報)、さ
らにはシリコーン変性(特開昭62−136860号公
報)などの手法で対応しているがいずれも半田付け時に
パッケージにクラックが発生し信頼性の優れた半導体封
止用エポキシ樹脂組成物を得るまでには至らなかった。In order to solve these problems, addition of thermoplastic oligomers (Japanese Patent Application Laid-Open No. 62-15849) and addition of various silicone compounds (Japanese Patent Application Laid-Open No. 115850, 62-
Nos. 116654 and 62-128162) and silicone modification (Japanese Patent Application Laid-Open No. 62-136860). However, cracks occur in the package at the time of soldering, resulting in excellent reliability. It has not been possible to obtain an epoxy resin composition for semiconductor encapsulation.
【0005】一方、半田付け時の耐熱ストレス性つまり
耐半田ストレス性に優れた半導体封止用エポキシ樹脂組
成物を得るために、樹脂系としてビフェニル型エポキシ
樹脂の使用(特開昭64−65116号公報)等が、検
討されてきたがビフェニル型エポキシ樹脂の使用により
リードフレームとの密着性及び低吸水性が向上し、クラ
ック発生が低減するが、耐熱性が劣るため特に250℃
以上の高温では、まだ耐半田ストレス性が不十分であ
る。On the other hand, in order to obtain an epoxy resin composition for semiconductor encapsulation having excellent heat stress resistance during soldering, that is, excellent solder stress resistance, a biphenyl type epoxy resin is used as a resin system (Japanese Patent Application Laid-Open No. 64-65116). Publication) has been studied, but the use of a biphenyl-type epoxy resin improves the adhesion to the lead frame and low water absorption, and reduces the occurrence of cracks.
At the above high temperature, the solder stress resistance is still insufficient.
【0006】[0006]
【発明が解決しようとする課題】本発明は、このような
問題に対して信頼性を劣化させることなく耐半田ストレ
ス性に優れた半導体封止用樹脂組成物を提供するもので
ある。An object of the present invention is to provide a resin composition for semiconductor encapsulation which is excellent in soldering stress resistance without deteriorating reliability against such a problem.
【0007】[0007]
【課題を解決するための手段】本発明のエポキシ樹脂組
成物は、(A)エポキシ樹脂として、式(1)で示され
る1,6−ビス(2,3−エポキシプロポキシ)ナフタ
レンを総エポキシ量に対して30〜100重量%含むエ
ポキシ樹脂The epoxy resin composition of the present invention comprises, as an epoxy resin (A), 1,6-bis (2,3-epoxypropoxy) naphthalene represented by the formula (1), Epoxy resin containing 30 to 100% by weight with respect to
【0008】[0008]
【化3】 Embedded image
【0009】(B)フェノール樹脂硬化剤として、式
(2)で示される3官能フェノール樹脂硬化剤を総フェ
ノール樹脂硬化剤量に対して50〜100重量%含むフ
ェノール樹脂硬化剤(B) A phenolic resin curing agent containing a trifunctional phenolic resin curing agent represented by the formula (2) in an amount of 50 to 100% by weight based on the total amount of the phenolic resin curing agent.
【0010】[0010]
【化4】 Embedded image
【0011】(式中nの値は1〜4、R1 〜R7 は水
素、ハロゲン、低級アルキル基の中から選択される同一
もしくは異なる原子または基) (C)無機充填材及び (D)硬化促進剤 を必須成分とする半導体封止用樹脂組成物で、従来のエ
ポキシ樹脂に比べ、非常に優れた耐半田ストレス性を有
するものである。(Wherein the value of n is 1 to 4 and R 1 to R 7 are the same or different atoms or groups selected from hydrogen, halogen and lower alkyl group). (C) Inorganic filler and (D) It is a resin composition for semiconductor encapsulation containing a curing accelerator as an essential component and has extremely excellent solder stress resistance as compared with conventional epoxy resins.
【0012】本発明に用いる式(1)で示されるエポキ
シ樹脂は、1,6−ビス(2,3−エポキシプロポキ
シ)ナフタレンであり、常温で半固形の性状を示し、成
形温度(175℃)において非常に低粘度であることか
ら、充填材の添加量を大幅に増加させることが可能とな
る。このことより、低吸水性に優れ、樹脂の線膨張係数
が小さく、成形時の離型性に優れるという樹脂本体の特
徴に加え、充填材の高充填された樹脂組成物は、吸水率
及び線膨張係数がさらに小さく、かつ衝撃強度に優れる
という特徴を有し、半田付け時の耐半田ストレス性に良
好の結果を示す。この1,6−ビス(2,3−エポキシ
プロポキシ)ナフタレンの使用量は、これを調節するこ
とにより耐半田ストレス性を最大限に引き出すことがで
きる。The epoxy resin represented by the formula (1) used in the present invention is 1,6-bis (2,3-epoxypropoxy) naphthalene, which exhibits a semi-solid property at room temperature and a molding temperature (175 ° C.) In this case, the viscosity is very low, so that the amount of the filler added can be greatly increased. From this, in addition to the characteristics of the resin body that is excellent in low water absorption, the coefficient of linear expansion of the resin is small, and excellent in mold release property during molding, the resin composition highly filled with a filler has a water absorption rate and a linearity. It has the characteristic that the coefficient of expansion is smaller and the impact strength is excellent, and shows good results in the resistance to soldering stress during soldering. By adjusting the amount of the 1,6-bis (2,3-epoxypropoxy) naphthalene used, the solder stress resistance can be maximized.
【0013】耐半田ストレス性の効果をだすためには、
1,6−ビス(2,3−エポキシプロポキシ)ナフタレ
ンを総エポキシ樹脂の30重量%以上、好ましくは60
重量%以上の使用が望ましい。30重量%未満では、低
吸水性、低線熱膨張係数が十分に得られず、耐半田スト
レス性が不十分である。1,6−ビス(2,3−エポキ
シプロポキシ)ナフタレン以外のエポキシ樹脂を併用す
る場合、用いるエポキシ樹脂とは、エポキシ基を有する
ポリマー全般をいう。たとえばビスフェノール型エポキ
シ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェ
ニール型エポキシ樹脂、フェノールノボラック型エポキ
シ樹脂及びトリフェノールメタン型エポキシ樹脂、アル
キル変性トリフェノールメタン型エポキシ樹脂等の3官
能エポキシ樹脂、トリアジン核含有エポキシ樹脂等のこ
とをいう。In order to obtain the effect of solder stress resistance,
1,6-bis (2,3-epoxypropoxy) naphthalene is used in an amount of 30% by weight or more, preferably 60% by weight of the total epoxy resin.
It is desirable to use not less than weight%. If the content is less than 30% by weight, low water absorption and low coefficient of linear thermal expansion cannot be sufficiently obtained, and solder stress resistance is insufficient. When an epoxy resin other than 1,6-bis (2,3-epoxypropoxy) naphthalene is used in combination, the epoxy resin used refers to all polymers having an epoxy group. For example, trifunctional epoxy resins such as bisphenol type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin, phenol novolak type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, and triazine nucleus containing epoxy resin And so on.
【0014】式(2)で示される構造の3官能フェノー
ル樹脂硬化剤は一分子中に3個以上の水酸基を有するフ
ェノール樹脂硬化剤であり、式中nの値は1〜4、R1
〜R7 は水素、ハロゲン、低級アルキル基の中から選択
される同一もしくは異なる原子または基で、nが4を越
えると成形時の流動性が劣る。低級アルキル基の炭素の
数は1〜4で、4を越えると成形時の流動性が劣る。更
に式中のR1 、R3 、R5 〜R7 は水素原子、R2 、R
4 はメチル基が好ましい。その特徴はエポキシ樹脂との
反応硬化物の架橋密度が向上し、ガラス転移温度が向上
する。従って、最近の表面実装化に対する半田付け時で
の耐半田ストレスに好適である。The trifunctional phenolic resin curing agent having the structure represented by the formula (2) is a phenolic resin curing agent having three or more hydroxyl groups in one molecule, wherein the value of n is from 1 to 4, R 1
To R 7 are the same or different atoms or groups selected from hydrogen, halogen, and lower alkyl groups, and when n exceeds 4, the fluidity during molding is poor. The number of carbon atoms in the lower alkyl group is 1 to 4, and if it exceeds 4, the fluidity during molding is poor. Further, R 1 , R 3 , R 5 to R 7 in the formula are a hydrogen atom, R 2 , R
4 is preferably a methyl group. The feature is that the crosslink density of the reaction cured product with the epoxy resin is improved, and the glass transition temperature is improved. Therefore, it is suitable for soldering stress during soldering for recent surface mounting.
【0015】この3官能フェノール樹脂硬化剤の使用量
は、これを調節することにより耐半田ストレス性を最大
限に引き出すことができる。耐半田ストレス性の効果を
だすには式(2)で示される3官能フェノール樹脂硬化
剤を総フェノール樹脂硬化剤量の50重量%以上好まし
くは70重量%以上の使用が望ましい。50重量%未満
だと、架橋密度が上がらず、耐半田ストレス性が不十分
である。By adjusting the amount of the trifunctional phenolic resin curing agent used, solder stress resistance can be maximized. In order to achieve the effect of resistance to soldering stress, it is desirable to use the trifunctional phenolic resin curing agent represented by the formula (2) in an amount of 50% by weight or more, preferably 70% by weight or more of the total amount of the phenolic resin curing agent. If it is less than 50% by weight, the crosslinking density does not increase and the solder stress resistance is insufficient.
【0016】式(2)で示される3官能フェノール樹脂
硬化剤以外に他のフェノール樹脂硬化剤を併用する場
合、用いるフェノール樹脂硬化剤とはフェノール性水酸
基を有するポリマー全般をいう。たとえば、フェノール
ノボラック樹脂、クレゾールノボラック樹脂、ジシクロ
ペンタジエン変性フェノール樹脂、ジシクロペンタジエ
ン変性フェノール樹脂とフェノールノボラック及びクレ
ゾールノボラック樹脂との共縮合物、パラキシレン変性
フェノール樹脂等を用いることができる。When other phenolic resin curing agents are used in addition to the trifunctional phenolic resin curing agent represented by the formula (2), the phenolic resin curing agent used generally refers to any polymer having a phenolic hydroxyl group. For example, phenol novolak resins, cresol novolak resins, dicyclopentadiene-modified phenol resins, co-condensates of dicyclopentadiene-modified phenol resins with phenol novolak and cresol novolak resins, para-xylene-modified phenol resins, and the like can be used.
【0017】本発明に用いる無機充填材としては、溶融
シリカ粉末、球状シリカ粉末、結晶シリカ粉末、2次凝
集シリカ粉末、多孔質シリカ粉末、2次凝集シリカ粉末
または多孔質シリカ粉末を粉砕したシリカ粉末、アルミ
ナ等が挙げられ、特に溶融シリカ粉末、球状シリカ粉末
及び溶融シリカ粉末との混合物が好ましい。また無機充
填材の配合量としては、耐半田ストレス性と成形性のバ
ランスから、総樹脂組成物中に70〜90重量%含むも
のが望ましい。The inorganic filler used in the present invention includes fused silica powder, spherical silica powder, crystalline silica powder, secondary aggregated silica powder, porous silica powder, secondary aggregated silica powder or silica obtained by pulverizing porous silica powder. Examples thereof include powder, alumina, and the like, and particularly preferred is a mixture with fused silica powder, spherical silica powder, and fused silica powder. The amount of the inorganic filler is desirably 70 to 90% by weight in the total resin composition in view of the balance between solder stress resistance and moldability.
【0018】本発明に使用される硬化促進剤はエポキシ
樹脂とフェノール性水酸基との反応を促進させるもので
あれば良く、一般に封止用材料に使用されているものを
ひろく使用することができる。例えばトリフェニルホス
フィン(TPP)、トリブチルホスフィン、トリ(4−
メチルフェニル)ホスフィン等の有機ホスフィン化合
物、トリブチルアミン、トリエチルアミン、ベンジルジ
メチルアミン、トリスジメチルアミノメチルフェノー
ル、ジアザビシクロウンデセン(DBU)等の3級アミ
ン、2−メチルイミダゾール、2−フェニルイミダゾー
ル、2−エチル−4−メチルイミダゾール等のイミダゾ
ール化合物が挙げられる。これらを単独で用いても、あ
るいは2種以上を併用することも可能である。The curing accelerator used in the present invention may be any one which promotes the reaction between the epoxy resin and the phenolic hydroxyl group, and those generally used for sealing materials can be widely used. For example, triphenylphosphine (TPP), tributylphosphine, tri (4-
Organic phosphine compounds such as methylphenyl) phosphine, tertiary amines such as tributylamine, triethylamine, benzyldimethylamine, trisdimethylaminomethylphenol, diazabicycloundecene (DBU), 2-methylimidazole, 2-phenylimidazole, Imidazole compounds such as -ethyl-4-methylimidazole. These can be used alone or in combination of two or more.
【0019】本発明の封止用エポキシ樹脂組成物はエポ
キシ樹脂、硬化剤、無機充填材および硬化促進剤を必須
成分とするが、これ以外に必要に応じてカーボンブラッ
ク等の着色剤、カルナバワックス、合成ワックス等の離
型剤、ブロム化エポキシ、三酸化アンチモン等の難燃
剤、γ−グリシドキシブロピルトリメトキシシラン等の
カップリング剤、シリコーンゴム、ポリブタジエン等の
低応力剤などの種々の添加剤を適宜配合しても差し支え
ない。The epoxy resin composition for encapsulation of the present invention comprises an epoxy resin, a curing agent, an inorganic filler and a curing accelerator as essential components. In addition to this, a coloring agent such as carbon black, and carnauba wax are optionally used. , Release agents such as synthetic waxes, flame retardants such as brominated epoxy and antimony trioxide, coupling agents such as γ-glycidoxypropyl trimethoxysilane, silicone rubber, and low stress agents such as polybutadiene. Additives may be appropriately compounded.
【0020】又、本発明の封止用エポキシ樹脂組成物を
成形材料として製造するには、エポキシ樹脂、硬化剤、
硬化促進剤、充填剤、その他の添加剤をミキサー等によ
り十分に均一混合した後さらに熱ロールまたはニーダー
等で溶融混合し、冷却後粉砕して成形材料とすることが
できる。これらの成形材料は電子部品あるいは電気部品
の封止、被覆、絶縁等に適用することができる。In order to produce the encapsulating epoxy resin composition of the present invention as a molding material, an epoxy resin, a curing agent,
A curing accelerator, a filler, and other additives can be sufficiently homogeneously mixed by a mixer or the like, then further melt-mixed by a hot roll or a kneader, cooled, and pulverized to obtain a molding material. These molding materials can be applied to sealing, coating, insulating and the like of electronic parts or electric parts.
【0021】[0021]
【実施例】以下実施例で本発明を詳細に説明する。配合
割合は重量部とする。The present invention will be described in detail with reference to the following examples. The mixing ratio is by weight.
【0022】実施例1 1,6−ビス(2,3−エポキシプロポキシ)ナフタレン (エポキシ当量 150g/eq) 7.3 重量部 オルソクレゾールノボラックエポキシ樹脂 (エポキシ当量 200g/eq、軟化点65℃) 4.9 重量部 式(3)で示されるフェノール樹脂硬化剤 (水酸基当量 109g/eq、軟化点100℃) 5.5 重量部Example 1 1,6-bis (2,3-epoxypropoxy) naphthalene (epoxy equivalent 150 g / eq) 7.3 parts by weight orthocresol novolak epoxy resin (epoxy equivalent 200 g / eq, softening point 65 ° C.) 4 5.9 parts by weight Phenol resin curing agent represented by formula (3) (hydroxyl equivalent 109 g / eq, softening point 100 ° C.) 5.5 parts by weight
【0023】[0023]
【化5】 Embedded image
【0024】(R1 、R3 、R5 〜R7 が水素原子、R
2 、R4 がメチル基で、nの値が1〜3を示す混合物
で、その割合は、n=1,2,3が3:2:1であ
る。) フェノールノボラック樹脂硬化剤 (水酸基当量 104g/eq、軟化点95℃) 2.3 重量部 溶融シリカ粉末 79.0 重量部 トリフェニルホスフィン 0.2 重量部 カーボンブラック 0.3 重量部 カルナバワックス 0.5 重量部 を、ミキサーで常温で混合し、70〜100℃で2軸ロ
ールにより混練し、冷却後粉砕し、成形材料とした。こ
の組成物を低圧トランスファー成形機(成形条件:17
5℃、70kg/cm2 、120秒)を用いて成形し、得ら
れた成形品を175℃、8時間で後硬化し評価した。試
験結果を表1に示す。(R 1 , R 3 , R 5 -R 7 are hydrogen atoms, R
2, R 4 is a methyl group, a mixture the value of n represents 1-3, the ratio, n = 1, 2, 3 is 3: 2: 1. Phenol novolak resin curing agent (hydroxyl equivalent: 104 g / eq, softening point: 95 ° C) 2.3 parts by weight Fused silica powder 79.0 parts by weight Triphenylphosphine 0.2 parts by weight Carbon black 0.3 parts by weight Carnauba wax 0. 5 parts by weight were mixed at room temperature with a mixer, kneaded at 70 to 100 ° C. with a biaxial roll, cooled and pulverized to obtain a molding material. This composition was transferred to a low-pressure transfer molding machine (molding conditions: 17).
(5 ° C., 70 kg / cm 2 , 120 seconds), and the obtained molded article was post-cured at 175 ° C. for 8 hours and evaluated. Table 1 shows the test results.
【0025】評価方法 *1スパイラルフロー EMMI−I−66に準じたスパイラルフロー測定用金
型を用い、試料を15g、成形温度を175℃、成形圧
力70kg/cm2 、成形時間2分で成形したときの成形品
の長さ *2半田ストレス性試験 52pQFP(チップサイズ36mm2 、パッケージ厚2.
05mm)20個について85℃、85%RHの雰囲気中
で24時間及び72時間処理後、260℃の半田槽に1
0秒間浸漬し、クラックの発生した成形品の個数を示
す。 *3 半田耐湿性試験 A1模擬素子(チップサイズ3.0×3.5mm)を搭載した
16pSOP(パッケージサイズ7.2× 11.5×1.95
mmt )を85℃で、85%RHの雰囲気中で72時間処
理し、その後260℃の半田槽に10秒間浸漬後、プレ
ッシャークッカー試験(125℃、100%RH)をお
こない、回路のオープン不良数を測定した。Evaluation method * 1 Spiral flow Using a mold for measuring spiral flow according to EMMI-I-66, 15 g of a sample was molded at a molding temperature of 175 ° C., a molding pressure of 70 kg / cm 2 , and a molding time of 2 minutes. * 2 Solder stress test 52pQFP (chip size 36mm 2 , package thickness 2.
05mm) After treating 20 pieces for 24 hours and 72 hours in an atmosphere of 85 ° C. and 85% RH, 1 piece was placed in a solder bath at 260 ° C.
It shows the number of molded articles immersed for 0 seconds and having cracks. * 3 Solder moisture resistance test 16pSOP (package size 7.2 × 11.5 × 1.95) mounted with A1 simulation device (chip size 3.0 × 3.5mm)
mm t ) at 85 ° C. in an atmosphere of 85% RH for 72 hours, then immersed in a solder bath at 260 ° C. for 10 seconds, and then subjected to a pressure cooker test (125 ° C., 100% RH) to open the circuit. The number was measured.
【0026】実施例2〜5 表1に従って配合し、実施例1と同様にしてエポキシ樹
脂組成物を得た。この組成物を用いて、実施例1と同様
の試験を行った。結果を表1に示す。Examples 2 to 5 Compounded according to Table 1, and an epoxy resin composition was obtained in the same manner as in Example 1. The same test as in Example 1 was performed using this composition. Table 1 shows the results.
【0027】比較例1〜4 表1に従って配合し、実施例1と同様にしてエポキシ樹
脂組成物を得た。この組成物を用いて、実施例1と同様
の試験を行った。結果を表1に示す。Comparative Examples 1-4 Compounded according to Table 1, an epoxy resin composition was obtained in the same manner as in Example 1. The same test as in Example 1 was performed using this composition. Table 1 shows the results.
【0028】[0028]
【表1】 [Table 1]
【0029】[0029]
【発明の効果】本発明による半導体封止用エポキシ樹脂
組成物は、耐半田ストレス性および耐湿性に極めて優れ
ていることにより、表面実装パッケージ封止用樹脂組成
物として好適である。The epoxy resin composition for encapsulating a semiconductor according to the present invention is extremely excellent in solder stress resistance and moisture resistance, and thus is suitable as a resin composition for encapsulating a surface mount package.
Claims (1)
示される1,6−ビス(2,3−エポキシプロポキシ)
ナフタレンを総エポキシ樹脂量に対して30〜100重
量%含むエポキシ樹脂 【化1】 (B)フェノール樹脂硬化剤として、式(2)で示され
る3官能フェノール樹脂硬化剤を総フェノール樹脂硬化
剤量に対して50〜100重量%含むフェノール樹脂硬
化剤 【化2】 (式中nの値は1〜4、R1 〜R7 は水素、ハロゲン、
低級アルキル基の中から選択される同一もしくは異なる
原子または基) (C)無機充填材及び (D)硬化促進剤 を必須成分とする半導体封止用エポキシ樹脂組成物。(1) 1,6-bis (2,3-epoxypropoxy) represented by the formula (1) as an epoxy resin:
An epoxy resin containing naphthalene in an amount of 30 to 100% by weight based on the total amount of the epoxy resin. (B) A phenolic resin curing agent containing a trifunctional phenolic resin curing agent represented by the formula (2) as a phenolic resin curing agent in an amount of 50 to 100% by weight based on the total amount of the phenolic resin curing agent. (Wherein the value of n is 1-4, R 1 -R 7 are hydrogen, halogen,
The same or different atoms or groups selected from lower alkyl groups) An epoxy resin composition for semiconductor encapsulation comprising (C) an inorganic filler and (D) a curing accelerator as essential components.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33828291A JP2954412B2 (en) | 1991-12-20 | 1991-12-20 | Epoxy resin composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33828291A JP2954412B2 (en) | 1991-12-20 | 1991-12-20 | Epoxy resin composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05175366A JPH05175366A (en) | 1993-07-13 |
JP2954412B2 true JP2954412B2 (en) | 1999-09-27 |
Family
ID=18316659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP33828291A Expired - Fee Related JP2954412B2 (en) | 1991-12-20 | 1991-12-20 | Epoxy resin composition |
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Country | Link |
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JP (1) | JP2954412B2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08325357A (en) * | 1995-03-28 | 1996-12-10 | Toray Ind Inc | Epoxy resin composition for semiconductor sealing use and semiconductor device |
JP3598963B2 (en) * | 2000-09-26 | 2004-12-08 | 松下電工株式会社 | Resin composition for optical semiconductor device |
JP4986725B2 (en) * | 2007-06-13 | 2012-07-25 | 株式会社Adeka | Composite material |
KR101526001B1 (en) * | 2011-12-26 | 2015-06-04 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor device, and semiconductor apparatus using the same |
-
1991
- 1991-12-20 JP JP33828291A patent/JP2954412B2/en not_active Expired - Fee Related
Also Published As
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JPH05175366A (en) | 1993-07-13 |
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