JP2948053B2 - Plasma processing method - Google Patents
Plasma processing methodInfo
- Publication number
- JP2948053B2 JP2948053B2 JP5118161A JP11816193A JP2948053B2 JP 2948053 B2 JP2948053 B2 JP 2948053B2 JP 5118161 A JP5118161 A JP 5118161A JP 11816193 A JP11816193 A JP 11816193A JP 2948053 B2 JP2948053 B2 JP 2948053B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- etching
- gas
- plasma
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003672 processing method Methods 0.000 title claims description 6
- 238000005530 etching Methods 0.000 claims description 40
- 239000007789 gas Substances 0.000 claims description 35
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- 239000007795 chemical reaction product Substances 0.000 claims description 7
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000001179 sorption measurement Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 36
- 238000004140 cleaning Methods 0.000 description 12
- 230000002411 adverse Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明はプラズマ処理方法に係
り、特にウエハを電極上に静電吸着させて保持し、臭化
水素（ＨＢｒ）をエッチングガスに用いてエッチング処
理する場合に好適なプラズマ処理方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing method, and more particularly to a plasma processing method suitable for performing an etching process using hydrogen bromide (HBr) as an etching gas while holding a wafer electrostatically adsorbed on an electrode. It relates to a processing method.
【０００２】[0002]
【従来の技術】臭化水素（ＨＢｒ）を用いたエッチング
処理では、例えば、第５３回応用物理学会学術講演会講
演予稿集１６ａ−ＳＫ−７に記載のように、レジストマ
スク付きポリシリコン膜をＨＢｒガスを用いてエッチン
グすると、反応生成物がチャンバー内に堆積し易いこと
が知られている。このため、従来、チャンバー内の堆積
物を除去するクリーニング処理として、六弗化硫黄（Ｓ
Ｆ6）、三弗化窒素（ＮＦ3）、フロン１４（ＣＦ4）、
フロン２３（ＣＨＦ3）を単独、又はこれらに酸素
（Ｏ2）を混合したガスを用いてプラズマを発生させ、
チャンバー内をプラズマクリーニングしていた。2. Description of the Related Art In an etching process using hydrogen bromide (HBr), for example, as described in the Proceedings of the 53rd Annual Meeting of the Japan Society of Applied Physics, 16a-SK-7, a polysilicon film with a resist mask is formed. It is known that when etching is performed using HBr gas, a reaction product is easily deposited in a chamber. Therefore, conventionally, as a cleaning process for removing deposits in a chamber, sulfur hexafluoride (S
F 6 ), nitrogen trifluoride (NF 3 ), Freon 14 (CF 4 ),
Plasma is generated by using Freon 23 (CHF 3 ) alone or a gas obtained by mixing oxygen (O 2 ) with them.
Plasma cleaning was performed inside the chamber.
【０００３】[0003]
【発明が解決しようとする課題】上記従来技術は、プラ
ズマ処理時間すなわちスループットの点について配慮さ
れていなかった。すなわち、従来のように弗素系ガスや
これらにＯ2ガスを混合したガスを使用してクリーニン
グを行った場合、電極上にエッチング処理後のウエハを
載置したまま行なうと加工形状に悪影響を与えることに
なり、また電極上にウエハを載置していなければ電極を
エッチングしてしまうため、電極上にダミーウエハを載
置する必要があった。このため反応生成物除去のクリー
ニングをウエハ毎に実施するためには、その都度ダミー
ウエハの載置が必要であり、ウエハ交換の時間がかかり
製品処理枚数の低下を招いていた。しかも、ウエハと電
極との間に静電吸着を利用している装置の場合には、ウ
エハを交換するたびにウエハ内の電荷を逃すための除電
シーケンスが必要であるため、更に時間が必要となって
しまう。The prior art described above does not consider the plasma processing time, that is, the throughput. That is, when cleaning is performed using a fluorine-based gas or a gas obtained by mixing these gases with O 2 gas as in the related art, if the cleaning is performed with the etched wafer placed on the electrode, the processed shape is adversely affected. That is, if the wafer is not mounted on the electrode, the electrode is etched, so that it is necessary to mount the dummy wafer on the electrode. For this reason, in order to carry out cleaning for removing reaction products for each wafer, it is necessary to place a dummy wafer each time, and it takes time to exchange wafers, resulting in a decrease in the number of processed products. In addition, in the case of an apparatus that utilizes electrostatic attraction between the wafer and the electrode, an additional charge elimination sequence is required to release the electric charge in the wafer each time the wafer is replaced, which requires more time. turn into.
【０００４】本発明の目的は、製品に悪影響を与えるこ
となく、スループットの高いクリーニングを実施するこ
とのできるプラズマ処理方法を提供することにある。An object of the present invention is to provide a plasma processing method capable of performing high-throughput cleaning without adversely affecting a product.
【０００５】[0005]
【課題を解決するための手段】上記目的は、真空室内に
臭化水素をエッチングガスとしたプラズマを発生させ、
フォトレジストをマスクとして用い真空室内に設けた電
極に静電吸着されたウエハをプラズマによってエッチン
グ処理し、エッチング処理終了後のウエハ毎に、真空室
内のエッチングガスに替えてＯ 2 ガスを供給し、ウエハ
を電極に配置したままＯ 2 ガスをプラズマ化し、エッチ
ング処理によって真空室内に付着したエッチングガスと
フォトレジストとの反応生成物を除去するとともに、静
電吸着用電源をオフしてウエハに帯電した電荷を逃がす
ことにより、達成される。An object of the present invention is to provide a vacuum chamber.
Generates plasma using hydrogen bromide as an etching gas,
An electrode provided in a vacuum chamber using photoresist as a mask
Etching the wafer electrostatically attracted to the poles by plasma
Vacuum processing, and a vacuum chamber
Supply O 2 gas instead of etching gas inside
The O 2 gas while located in the electrode and plasma, etch
Etching gas adhering to the vacuum chamber
Remove the reaction products with the photoresist and
Turn off the power for electroadsorption to release the charge on the wafer
This is achieved by:
【０００６】[0006]
【作用】ＨＢｒをエッチングガスとして用いたプラズマ
処理の場合、被エッチング材のマスク材料であるフォト
レジストの主成分である炭素（Ｃ）とＨＢｒガス中の水
素（Ｈ）の重合物がエッチング処理室内に付着する。そ
こで、一枚のウエハをエッチング終了後、静電吸着によ
り保持されていたウエハを電極上に残したまま、エッチ
ングの処理ガスに替えてＯ2ガスをチャンバー内に供給
し、Ｏ2ガスのプラズマを発生させる。これにより静電
吸着によるウエハ内の滞電の除電を行うことができると
ともに、チャンバー内に付着した反応生成物の主成分で
あるＣやＨをＯ2と反応させてチャンバー内のクリーニ
ングを同時に行うことができ、製品に悪影響を与えるこ
となく、スループットの高いクリーニングを実施するこ
とができる。In the case of plasma processing using HBr as an etching gas, a polymer of carbon (C), which is a main component of a photoresist which is a mask material of a material to be etched, and hydrogen (H) in the HBr gas is formed in an etching chamber. Adheres to Therefore, after the etching of one wafer, O 2 gas is supplied into the chamber in place of the etching processing gas while the wafer held by the electrostatic chuck is left on the electrode, and the O 2 gas plasma is removed. Generate. Thus, static electricity in the wafer can be eliminated by electrostatic adsorption, and C and H, which are the main components of the reaction products attached in the chamber, react with O 2 to simultaneously clean the inside of the chamber. Thus, high-throughput cleaning can be performed without adversely affecting the product.
【０００７】[0007]
【実施例】本発明の一実施例を図１及び図２により説明
する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to FIGS.
【０００８】図２は、本発明を実施するためのプラズマ
処理装置の一例で、マイクロ波プラズマエッチング装置
を示す。エッチングチャンバー１１が気密に取り付けら
れた真空室１２は、あらかじめ高真空排気ポンプ１３及
び補助ポンプ１４で構成される排気系により高真空排気
されており、その後、エッチング用ガスが流量制御器１
５を介してエッチングチャンバー１１内に導入される。
真空室１２内が一定のガス圧力に保持されると、マグネ
トロン１６によって発振したマイクロ波が導波管１７を
介してエッチングチャンバー１１内に導入され、磁場コ
イル１８によって形成された磁場との相乗作用によりエ
ッチングチャンバー１１内の放電部にプラズマが発生す
る。ここで、ウエハ２０を配置した電極２１に接続され
た高周波電源１９によって、プラズマ中のイオンをウエ
ハ２０に引き込み、引き込まれた活性イオンとウエハ２
０の被処理面とを反応させ、エッチング処理を行う。ま
た、電極２１に接続された静電吸着用電源２２によっ
て、ウエハ２０と電極２１との間に静電吸着を与え、ウ
エハ２０と電極２１との間の密着性を向上させて、冷却
効率を高められるようにしてある。エッチング処理が終
了しウエハ２０を搬出する際に、ウエハ２０の残留吸着
力を除去するために、エッチングチャンバー１１内にプ
ラズマを発生させてウエハに帯電した電荷をプラズマ中
に放出させる（この工程を静電吸着除電シ−ケンスと呼
ぶ。）ようになっている。FIG. 2 shows a microwave plasma etching apparatus as an example of a plasma processing apparatus for carrying out the present invention. The vacuum chamber 12 in which the etching chamber 11 is airtightly mounted is evacuated to a high vacuum by an exhaust system including a high vacuum exhaust pump 13 and an auxiliary pump 14 in advance.
5 is introduced into the etching chamber 11.
When the inside of the vacuum chamber 12 is maintained at a constant gas pressure, the microwave oscillated by the magnetron 16 is introduced into the etching chamber 11 via the waveguide 17, and acts synergistically with the magnetic field formed by the magnetic field coil 18. As a result, plasma is generated in a discharge portion in the etching chamber 11. Here, ions in the plasma are drawn into the wafer 20 by the high-frequency power supply 19 connected to the electrode 21 on which the wafer 20 is arranged, and the drawn active ions and the wafer 2
The etching process is performed by reacting the surface with 0 to be processed. In addition, the electrostatic attraction power supply 22 connected to the electrode 21 applies electrostatic attraction between the wafer 20 and the electrode 21 to improve the adhesion between the wafer 20 and the electrode 21 to improve the cooling efficiency. It is designed to be enhanced. When the etching process is completed and the wafer 20 is carried out, in order to remove the residual suction force of the wafer 20, plasma is generated in the etching chamber 11 and electric charges charged on the wafer are released into the plasma (this process is referred to as “plasma”). This is called an electrostatic adsorption / discharge sequence.)
【０００９】上記のように構成された装置において、図
１に示すようにエッチングチャンバー１１内にエッチン
グガスとしてＨＢｒをガス流量制御器１５を介して供給
し、所定圧力に保持した後、マグネトロン１６からマイ
クロ波を発振しエッチングチャンバー１１内にプラズマ
を発生させる。このとき、既に磁場コイル１８により磁
場が形成されている。プラズマが発生すると、ウエハ２
０のエッチング処理が開始されるとともに、静電吸着用
電源２２によって電極２１上のウエハ２０が静電吸着さ
れて、エッチング処理が進行する。このエッチング処理
によって、被エッチング材のマスク材料であるフォトレ
ジストの主成分である炭素（Ｃ）とＨＢｒガス中の水素
（Ｈ）の重合物がエッチングチャンバー１１内に付着す
る。In the apparatus configured as described above, as shown in FIG. 1, HBr is supplied as an etching gas into the etching chamber 11 through a gas flow controller 15 and maintained at a predetermined pressure. Microwaves are oscillated to generate plasma in the etching chamber 11. At this time, a magnetic field has already been formed by the magnetic field coil 18. When plasma is generated, the wafer 2
0 is started, and the wafer 20 on the electrode 21 is electrostatically attracted by the electrostatic attraction power supply 22, and the etching process proceeds. By this etching process, a polymer of carbon (C), which is a main component of the photoresist as a mask material of the material to be etched, and hydrogen (H) in the HBr gas adheres into the etching chamber 11.
【００１０】ウエハ２０のエッチング終了後、静電吸着
により保持されていたウエハ２０を電極２１上に残した
まま、エッチングのプロセスガスに替えて除電ガスのＯ
2ガスをエッチングチャンバー１１内に供給し、Ｏ2ガス
のプラズマを発生させる。このプラズマを通してウエハ
２０に残留した電荷がアースに逃げ、ウエハ２０内の電
荷が無くなり、除電が行われる。また、Ｏ2プラズマを
発生させることにより、チャンバー内に堆積した反応生
成物の主成分であるＣやＨがＯと反応し、ＣＯｘ，Ｈ2
Ｏとなって除去され、チャンバー内がクリーニングされ
る。これによって、従来のように製品に悪影響を与える
ことなく、スループットの高いクリーニングを実施する
ことができる。After the etching of the wafer 20 is completed, the wafer 20 held by the electrostatic attraction is left on the electrode 21 while the process gas for the etching is replaced with the O 2 of the charge removing gas.
Two gases are supplied into the etching chamber 11 to generate O 2 gas plasma. The electric charge remaining on the wafer 20 escapes to the ground through this plasma, and the electric charge in the wafer 20 disappears, so that the charge is removed. Also, by generating O 2 plasma, C and H, which are the main components of the reaction products deposited in the chamber, react with O, and COx, H 2
O is removed and the inside of the chamber is cleaned. This makes it possible to perform high-throughput cleaning without adversely affecting the product unlike the related art.
【００１１】なお、本実施例では静電吸着除電シーケン
スを利用してウエハ毎のクリーニングが実施でき、エッ
チングチャンバー１１内をクリーンな状態に維持したま
ま、次のウエハのエッチング処理が可能となるが、静電
吸着を使用しない場合は、エッチングステップにクリー
ニングステップを加えることで同様にエッチングチャン
バー１１内をクリーンな状態に維持したまま、次のウエ
ハのエッチング処理を実行できる。In this embodiment, the cleaning of each wafer can be performed by utilizing the electrostatic attraction / discharge sequence, and the next wafer can be etched while the inside of the etching chamber 11 is kept clean. When the electrostatic chuck is not used, by adding a cleaning step to the etching step, the next wafer can be etched while maintaining the inside of the etching chamber 11 in a clean state.
【００１２】[0012]
【発明の効果】本発明によれば、一枚のウエハをエッチ
ング終了後、静電吸着により保持されていたウエハを電
極上に残したまま、エッチングの処理ガスに替えてＯ2
ガスをチャンバー内に供給し、Ｏ2ガスのプラズマを発
生させることにより、静電吸着によるウエハ内の滞電の
除電を行うことができるとともに、チャンバー内に付着
した反応生成物の主成分であるＣやＨをＯ2と反応させ
てチャンバー内のクリーニングを同時に行うことがで
き、製品に悪影響を与えることなく、スループットの高
いクリーニングを実施することができるという効果があ
る。According to the present invention, after one wafer has been etched, the wafer held by the electrostatic attraction is left on the electrode and replaced with O 2 gas instead of the etching process gas.
By supplying gas into the chamber and generating O 2 gas plasma, static electricity in the wafer can be eliminated by electrostatic adsorption, and is the main component of the reaction products attached to the chamber. The cleaning of the chamber can be performed at the same time by reacting C and H with O 2, and there is an effect that cleaning with high throughput can be performed without adversely affecting the product.
【図１】本発明のプラズマ処理の一実施例を示すタイム
チャートである。FIG. 1 is a time chart showing one embodiment of the plasma processing of the present invention.
【図２】本発明を実施するための装置の一例を示す概略
図である。FIG. 2 is a schematic diagram showing an example of an apparatus for carrying out the present invention.
１１…エッチングチャンバー、１２…真空室、１３…高
真空排気ポンプ、１４…補助ポンプ、１５…ガス流量制
御器、１６…マグネトロン、１７…導波管、１８…磁場
コイル、１９…高周波電源、２０…ウエハ、２１…電
極、２２…静電吸着用電源。11 etching chamber, 12 vacuum chamber, 13 high vacuum pump, 14 auxiliary pump, 15 gas flow controller, 16 magnetron, 17 waveguide, 18 magnetic field coil, 19 high frequency power supply, 20 ... wafer, 21 ... electrode, 22 ... power supply for electrostatic attraction.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平４−9473（ＪＰ，Ａ) 特開 平４−44320（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-4-9473 (JP, A) JP-A-4-44320 (JP, A)
Claims (1)
たプラズマを発生させ、フォトレジストをマスクとして
用い前記真空室内に設けた電極に静電吸着されたウエハ
を前記プラズマによってエッチング処理し、前記エッチ
ング処理終了後のウエハ毎に、前記真空室内の前記エッ
チングガスに替えてＯ 2 ガスを供給し、前記ウエハを前
記電極に配置したまま前記Ｏ 2 ガスをプラズマ化し、前
記エッチング処理によって前記真空室内に付着した前記
エッチングガスと前記フォトレジストとの反応生成物を
除去するとともに、前記静電吸着用電源をオフして前記
ウエハに帯電した電荷を逃がすことを特徴とするプラズ
マ処理方法。In a vacuum chamber, hydrogen bromide is used as an etching gas.
Generated plasma, using photoresist as a mask
A wafer electrostatically attracted to an electrode provided in the vacuum chamber
Is etched by the plasma, and the etching is performed.
For each wafer after the etching process, the etching in the vacuum chamber is performed.
O 2 gas is supplied in place of the etching gas, and the wafer is
The O 2 gas is turned into plasma while being placed on the electrode, and
The above-described etching process adheres to the vacuum chamber.
The reaction product of the etching gas and the photoresist is
While removing, the power supply for electrostatic adsorption is turned off and the
A plasma processing method characterized by discharging charges charged on a wafer .
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5118161A JP2948053B2 (en) | 1993-05-20 | 1993-05-20 | Plasma processing method |
| EP99102733A EP0938134A3 (en) | 1993-05-20 | 1994-05-20 | Plasma processing method |
| TW083104587A TW255839B (en) | 1993-05-20 | 1994-05-20 | |
| EP94915274A EP0709877A4 (en) | 1993-05-20 | 1994-05-20 | PLASMA TREATMENT PROCESS |
| PCT/JP1994/000812 WO1994028578A1 (en) | 1993-05-20 | 1994-05-20 | Plasma processing method |
| KR1019950705168A KR100363340B1 (en) | 1993-05-20 | 1994-05-20 | Plasma processing method |
| US08/553,435 US5681424A (en) | 1993-05-20 | 1994-05-20 | Plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5118161A JP2948053B2 (en) | 1993-05-20 | 1993-05-20 | Plasma processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08279486A JPH08279486A (en) | 1996-10-22 |
| JP2948053B2 true JP2948053B2 (en) | 1999-09-13 |
Family
ID=14729618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5118161A Expired - Fee Related JP2948053B2 (en) | 1993-05-20 | 1993-05-20 | Plasma processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2948053B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006270030A (en) * | 2005-02-28 | 2006-10-05 | Tokyo Electron Ltd | Plasma treatment method and post-treatment method |
| KR101194020B1 (en) * | 2005-07-08 | 2012-10-24 | 매그나칩 반도체 유한회사 | Method for manufacturing semiconductor device |
| JP5179219B2 (en) * | 2008-02-20 | 2013-04-10 | 東京エレクトロン株式会社 | Deposit removal method and substrate processing method |
| JP6516125B2 (en) * | 2015-09-07 | 2019-05-22 | パナソニックＩｐマネジメント株式会社 | Plasma processing method and method of manufacturing electronic component |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH049473A (en) * | 1990-04-27 | 1992-01-14 | Sony Corp | Base plate treatment apparatus |
| JPH0444320A (en) * | 1990-06-12 | 1992-02-14 | Matsushita Electric Ind Co Ltd | Dry etching |
-
1993
- 1993-05-20 JP JP5118161A patent/JP2948053B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08279486A (en) | 1996-10-22 |
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