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JP2946399B2 - Mirror contamination detector - Google Patents

Mirror contamination detector

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Publication number
JP2946399B2
JP2946399B2 JP7097048A JP9704895A JP2946399B2 JP 2946399 B2 JP2946399 B2 JP 2946399B2 JP 7097048 A JP7097048 A JP 7097048A JP 9704895 A JP9704895 A JP 9704895A JP 2946399 B2 JP2946399 B2 JP 2946399B2
Authority
JP
Japan
Prior art keywords
mirror
main component
light
contaminant
diffraction grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP7097048A
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Japanese (ja)
Other versions
JPH08292157A (en
Inventor
隆典 加藤
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Sumitomo Heavy Industries Ltd
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Sumitomo Heavy Industries Ltd
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Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Priority to JP7097048A priority Critical patent/JP2946399B2/en
Publication of JPH08292157A publication Critical patent/JPH08292157A/en
Application granted granted Critical
Publication of JP2946399B2 publication Critical patent/JP2946399B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/702Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Particle Accelerators (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、シンクロトロン放射光
をミラーを経由して被加工物に導いてテフロン材等のア
ブレーション加工を行う加工装置に適したミラー汚染検
出装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mirror contamination detecting apparatus suitable for a processing apparatus for conducting synchrotron radiation to a workpiece through a mirror and performing ablation processing of Teflon material or the like.

【0002】[0002]

【従来の技術】従来、シンクロトロン放射光発生装置
(以後、SR光発生装置と呼ぶ)からのシンクロトロン
放射光(以後、SR光と呼ぶ)を偏向装置を通して、被
加工物に導いてテフロン材等を加工することが提案され
ている。図3を参照して、これを簡単に説明する。図3
において、SR光発生装置11から放射されたSR光1
2を、図中破線でその一部を示す真空ダクト13(途中
省略)により加工容器14へ導く。SR光12は、垂直
面内では一定の厚さを有し、断面長方形のビームを形成
する。真空ダクト13内の光路上には、SR光12を反
射してその光路を上下方向に偏向するように、平坦な反
射面を持つミラー15が配置されている。ミラー15
は、回転軸16の周りに所定の角度範囲内で回動するよ
うに配置されている。ミラー15の回動は、回転軸16
に結合されたアクチュエータ17により行われる。アク
チュエータ17には、速度制御器18が接続されてお
り、ミラー15の回動速度をその回転角度位置に応じて
変化するように制御する。真空ダクト13は、加工容器
14に連なっている。
2. Description of the Related Art Conventionally, a synchrotron radiation light (hereinafter, referred to as SR light) from a synchrotron radiation light generator (hereinafter, referred to as SR light generation device) is guided to a workpiece through a deflecting device, and then to a Teflon material. It has been proposed to process etc. This will be described briefly with reference to FIG. FIG.
, The SR light 1 radiated from the SR light generator 11
2 is guided to the processing vessel 14 by a vacuum duct 13 (not shown in the middle), a part of which is indicated by a broken line in the figure. The SR light 12 has a constant thickness in a vertical plane and forms a beam having a rectangular cross section. A mirror 15 having a flat reflecting surface is arranged on the optical path in the vacuum duct 13 so as to reflect the SR light 12 and deflect the optical path in the vertical direction. Mirror 15
Are arranged so as to rotate around the rotation axis 16 within a predetermined angle range. The rotation of the mirror 15 is
This is performed by an actuator 17 coupled to. A speed controller 18 is connected to the actuator 17 and controls the rotation speed of the mirror 15 so as to change according to the rotation angle position. The vacuum duct 13 is connected to the processing container 14.

【0003】[0003]

【発明が解決しようとする課題】ところで、この種の加
工装置はミラーを有する構造であるため、装置の使用に
伴い、SR光による蒸着作用や電子衝突脱離作用等によ
り、ミラーの反射面、特に、SR光が実際にあたる部分
に物質が付着して汚染される。汚染物質は、真空ダクト
内に残留するガスや、加工対象物のテフロン等に因るの
で、ハイドロカーボン系の化合物、即ち、カーボンを主
成分とする化合物が多い。そして、ミラーが汚染される
と、ミラー本来の反射率が低下するので、偏向したSR
光出力の強度が低下するという問題点がある。悪い場合
には、加工に必要とされるSR光強度が得られなくな
る。特に、汚染源としての加工対象物からのフラグメン
トは真空ダクト内の残留物質に比べて非常に多量であ
り、ミラーの汚染の度合いが高く問題である。
By the way, since this type of processing apparatus has a structure having a mirror, the reflection surface of the mirror, the electron collision desorption operation, etc., due to the SR light and the like due to the use of the apparatus, In particular, a substance adheres to and contaminates a portion to which SR light is actually applied. The contaminants are caused by gas remaining in the vacuum duct, Teflon of the object to be processed, and the like, and therefore, there are many hydrocarbon-based compounds, that is, compounds mainly containing carbon. When the mirror is contaminated, the original reflectance of the mirror decreases, and the deflected SR
There is a problem that the intensity of light output is reduced. If not, the SR light intensity required for processing cannot be obtained. In particular, the amount of fragments from the workpiece as a contamination source is much larger than the residual material in the vacuum duct, and the degree of contamination of the mirror is high, which is a problem.

【0004】よって、ミラーの汚染を検出し、汚染が所
定量だけ生じた場合にはミラーを洗浄する等のメインテ
ナンスが要求されている。特に、ミラー汚染の検出につ
いては、偏向装置の通常動作に支障を来すことがなく、
また、清浄作業の要不要がわかる前にわざわざ装置を分
解する必要がないことが要求される。さらに、検出結果
が正確であること、検出のための構造が簡素であること
なども要求される。
Accordingly, there is a demand for maintenance such as detecting the contamination of the mirror and cleaning the mirror when a predetermined amount of the contamination occurs. In particular, the detection of mirror contamination does not hinder the normal operation of the deflecting device.
In addition, it is required that the device need not be disassembled before the necessity of the cleaning operation is recognized. Further, it is required that the detection result is accurate and that the structure for detection is simple.

【0005】本発明の課題は、偏向装置、加工装置の通
常動作に支障を来すことがなく、また、装置を分解する
ことなくミラーの汚染を検出できるミラー汚染検出装置
を提供することである。
[0005] An object of the present invention is to provide a mirror contamination detecting device capable of detecting the contamination of a mirror without disturbing the normal operation of the deflecting device and the processing device and without disassembling the device. .

【0006】本発明の他の課題は、簡素な構成で、ミラ
ーの汚染を正確に検出できるミラー汚染検出装置を提供
することである。
Another object of the present invention is to provide a mirror contamination detecting device capable of accurately detecting mirror contamination with a simple configuration.

【0007】[0007]

【課題を解決するための手段】本発明によれば、シンク
ロトロン放射光発生装置からのシンクロトロン放射光を
ミラーを介して被加工物に導いて加工を行う加工装置に
適用され、前記ミラーによる反射光の光路範囲内にて該
反射光のうちから該ミラーに付着する汚染物質の主成分
の元素の吸収端にかかわる光子エネルギ近傍の分光を抽
出可能な抽出角度でもって配置される回折格子と、前記
回折格子を前記反射光の光路範囲内外に移動する回折格
子駆動部と、前記汚染物質の主成分と同じ主成分から成
り、前記回折格子からの前記分光を受光可能な分光受光
領域に配置され、該分光の光電流を検出するワイヤとを
有し、前記ワイヤにて検出した前記光電流に基づいて前
記汚染物質の付着量を検出することを特徴とするミラー
汚染検出装置が得られる。
According to the present invention, the present invention is applied to a processing apparatus for performing processing by guiding synchrotron radiation from a synchrotron radiation generator to a workpiece through a mirror. A diffraction grating disposed at an extraction angle capable of extracting a spectrum near a photon energy related to an absorption edge of an element of a main component of a contaminant attached to the mirror from the reflected light within an optical path range of the reflected light; A diffraction grating driving unit that moves the diffraction grating into and out of the optical path range of the reflected light; and a spectral light receiving region that is made of the same main component as the main component of the contaminant and that can receive the spectral light from the diffraction grating. And a wire for detecting the photocurrent of the spectroscopy, and detecting the amount of the contaminant attached based on the photocurrent detected by the wire. It is.

【0008】本発明によればまた、前記ワイヤを前記分
光受光領域のうちの前記分光が最大強度である位置に移
動調整するワイヤ駆動部を有する前記ミラー汚染検出装
置が得られる。
According to the present invention, there is also provided the mirror contamination detecting device having a wire driving unit for moving and adjusting the wire to a position in the spectral light receiving area where the spectral intensity is the maximum.

【0009】本発明によればさらに、前記汚染物質の主
成分が複数種類の主成分候補のうちのいずれかである場
合に対応する前記ミラー汚染検出装置であって、前記回
折格子は、検出すべき前記汚染物質の主成分に応じて前
記抽出角度を調整可能であり、前記ワイヤは、前記主成
分候補に対応するように主成分が異なる複数種類のもの
が用意され、かつ用意されたうちから検出すべき前記汚
染物質の主成分に応じて選択的に前記分光受光領域に移
動されるミラー汚染検出装置が得られる。
According to the present invention, there is further provided the mirror contamination detecting device corresponding to the case where the main component of the contaminant is one of a plurality of types of main component candidates, wherein the diffraction grating detects the main component. The extraction angle can be adjusted according to the main component of the contaminant to be formed, and the wire is prepared in a plurality of types having different main components so as to correspond to the main component candidates, and from among the prepared wires. There is obtained a mirror contamination detection device which is selectively moved to the spectral light receiving region according to a main component of the contaminant to be detected.

【0010】[0010]

【作用】一般に、SR光発生装置が発生するSR光は、
その光子束が光子エネルギに応じた分布を呈している。
このため、偏向装置におけるミラーの反射光も、その光
子束が光子エネルギに応じた分布を呈するが、その光子
束の大きさはミラー反射面のSR光に対する反射率(吸
収率)に基づく。そして、ミラーのSR光に対する吸収
率は、ミラー反射面の汚染の度合いに基づく。よって、
本発明では、ミラーの汚染の度合いを、ミラー反射光の
光子束を検出することで検出する。
Generally, the SR light generated by the SR light generator is
The photon flux has a distribution according to the photon energy.
Therefore, the reflected light of the mirror in the deflecting device also exhibits a distribution of the photon flux according to the photon energy, and the size of the photon flux is based on the reflectance (absorbance) of the mirror reflection surface for SR light. Then, the absorptance of the mirror for SR light is based on the degree of contamination of the mirror reflection surface. Therefore,
In the present invention, the degree of contamination of the mirror is detected by detecting the photon flux of the mirror reflected light.

【0011】[0011]

【実施例】本発明による実施例を説明する前に、ミラー
の汚染の度合いと光子束との関係について説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Before describing an embodiment according to the present invention, the relationship between the degree of mirror contamination and the photon flux will be described.

【0012】発明者等は、SR光発生装置および偏向装
置を用いて、ミラーの汚染の度合いと光子束の分布との
関係を測定する実験を行った。尚、ミラーとしては、清
浄化されたミラー、ならびに疑似的に汚染させたミラー
を用いた。ここでの汚染物質は、後述するように、実際
の汚染物質の代表的な主成分としてのカーボンとした。
The inventors conducted an experiment to measure the relationship between the degree of contamination of the mirror and the distribution of the photon flux using the SR light generating device and the deflecting device. As the mirror, a cleaned mirror and a mirror that was artificially contaminated were used. The contaminant here was carbon as a typical main component of the actual contaminant, as described later.

【0013】図2は、偏向装置の各種ミラーによって反
射した各SR光の光子エネルギと光子束の関係を示す図
である。図2において、細い実線aは、清浄化されたミ
ラーによる反射光であり、これは、SR光発生装置の図
示しない発生光にほぼ等しい。太い実線bは、清浄化さ
れたミラーにカーボンを10nmの厚さに付着した場合
である。この場合、光子束が実線aに比べて、光子エネ
ルギが約100eV以下の範囲全域にて低いと共に、2
84.2eVにて鋭く低くかつこれ以上数百eV以下の
範囲にても低い。破線cは、清浄化されたミラーにカー
ボンを100nmの厚さに付着した場合である。この場
合、光子束が実線aに比べて、光子エネルギが284.
2eV以下の範囲全域にて低いと共に、284.2eV
にて鋭く顕著に低くかつこれ以上数百eV以下の範囲に
ても低い。ここで、実線bおよび破線cにおいて、光子
エネルギが284.2eVでの光子束が鋭く低いのは、
ミラーの汚染物質としてのカーボン元素の吸収端(所謂
カーボンのKエッジ)が光子エネルギ284.2eVに
あるためである。
FIG. 2 is a diagram showing the relationship between the photon energy and the photon flux of each SR light reflected by various mirrors of the deflecting device. In FIG. 2, the thin solid line a is the reflected light from the cleaned mirror, which is substantially equal to the light (not shown) generated by the SR light generator. The thick solid line b indicates the case where carbon was attached to the cleaned mirror to a thickness of 10 nm. In this case, the photon flux is lower over the entire range of about 100 eV or less than the solid line a, and
It is sharply low at 84.2 eV and is low even in the range of more than several hundred eV. The broken line c shows the case where carbon was attached to the cleaned mirror to a thickness of 100 nm. In this case, the photon flux is 284.
It is low over the entire range of 2 eV or less and 284.2 eV.
, Sharply and remarkably low, and even in the range of several hundred eV or less. Here, in the solid line b and the dashed line c, the photon flux at a photon energy of 284.2 eV is sharply low.
This is because the absorption edge of the carbon element as a contaminant of the mirror (so-called K edge of carbon) is at a photon energy of 284.2 eV.

【0014】以上の実験結果から、汚染物質を光子束の
検出により検出するのであれば、光子エネルギが約10
0eV以下の光子束か、あるいは汚染物質の主成分元素
の吸収端にかかわる光子エネルギ(カーボン元素では2
84.2eV)近傍の光子束を検出すればよいことが分
かる。ただし、テフロン材の加工にSR光収束偏向装置
に要求される光子エネルギの実用範囲はおよそ数十eV
以上の範囲であるという実情がある。よって、本発明で
は、ミラーによって反射されるSR光のうちの、ミラー
に付着する汚染物質の主成分元素の吸収端にかかわる光
子エネルギ(カーボン元素では284.2eV)近傍光
を検出することで、汚染物質の付着量を検出し、ミラー
の汚染の度合いを検出する。
From the above experimental results, if the contaminant is detected by detecting the photon flux, the photon energy is about 10
A photon flux of 0 eV or less, or a photon energy related to the absorption edge of the main component element of the contaminant (2
It is understood that the photon flux near 84.2 eV) may be detected. However, the practical range of the photon energy required for the SR light focusing / deflecting device for processing the Teflon material is approximately several tens eV.
There is a fact that the range is above. Therefore, in the present invention, by detecting near-photon energy (284.2 eV for the carbon element) of the SR light reflected by the mirror related to the absorption edge of the main component element of the contaminant attached to the mirror, The amount of contaminants attached is detected, and the degree of mirror contamination is detected.

【0015】尚、汚染物質としては、真空ダクト内に残
留するハイドロカーボン系化合物がイオン化して付着す
るものが考えられる。特に、アブレーション加工装置と
して利用する場合には、加工対象物が例えばテフロンで
あるならばC、CF、CF2等がイオン化して付着す
る。尚、上記テフロンの化学式は、下記の化学式1によ
り表される。
As the contaminants, it is considered that hydrocarbon compounds remaining in the vacuum duct are ionized and adhered. In particular, when used as ablation processing apparatus, if the object is, for example Teflon C, CF, CF 2 or the like is attached ionized. The chemical formula of the above Teflon is represented by the following chemical formula 1.

【0016】[0016]

【化1】 このように、汚染物質は、一般に、カーボンを主成分と
することが多いため、上記実験ならびに以下の実施例で
は、汚染物質の主成分がカーボンの場合に対する構成と
している。
Embedded image As described above, since the contaminants generally contain carbon as the main component, the above experiment and the following examples are configured for the case where the main component of the contaminants is carbon.

【0017】以下、図1を参照して、本発明の一実施例
によるミラー汚染検出装置を説明する。
Hereinafter, a mirror contamination detecting apparatus according to an embodiment of the present invention will be described with reference to FIG.

【0018】図1は、SR光の偏向装置を示す図であ
る。図1において、真空ダクト1内には、所定の範囲内
にて姿勢変化するミラー2が配置され、図示しないSR
光発生装置(図中左側)からのSR光100をミラー2
を用いて偏向する。
FIG. 1 is a diagram showing an SR light deflecting device. In FIG. 1, a mirror 2 whose posture is changed within a predetermined range is arranged in a vacuum duct 1, and an SR (not shown) is provided.
The SR light 100 from the light generation device (left side in the figure) is mirrored by 2
To deflect.

【0019】さて、本実施例によるミラー汚染検出手段
は、ミラー2によるSR光100の反射光100′の光
路内にて、反射光100′のうちから、ミラー2に付着
する汚染物質の主成分(本例では、カーボン)元素の吸
収端(Kエッジ)にかかわる光子エネルギ(284.2
eV)近傍の分光100′′を抽出可能な抽出角度でも
って配置される回折格子3(例えば、ラインのピッチが
600本/mmの平面回折格子)と、回折格子3を反射
光100′の光路範囲内外に(図中上下方向に)移動す
るリニアモータ等により構成される回折格子駆動部4
と、汚染物質の主成分元素と同じ主成分であるカーボン
から成り、回折格子3からの分光100′′を受光可能
な分光受光領域に配置され、分光100′′の光電流を
検出するカーボンワイヤ5と、カーボンワイヤ5を分光
受光領域のうちの分光100′′の最大強度である位置
(後述する)に移動調整するための図示しないワイヤ駆
動部とを有している。ミラー汚染検出手段は、上記構成
により、カーボンワイヤ5により検出される光電流の値
に基づいて、汚染物質であるカーボンの付着量を検出す
る。
The mirror contamination detecting means according to the present embodiment includes a main component of the contaminant adhering to the mirror 2 in the reflected light 100 'in the optical path of the reflected light 100' of the SR light 100 from the mirror 2. The photon energy (284.2) related to the absorption edge (K edge) of the (carbon in this example) element
eV) A diffraction grating 3 (for example, a plane diffraction grating having a line pitch of 600 lines / mm) arranged at an extraction angle capable of extracting the nearby spectral component 100 '', and an optical path of the reflected light 100 ' Diffraction grating driving unit 4 composed of a linear motor or the like that moves in and out of the range (in the vertical direction in the figure)
And a carbon wire made of carbon, which is the same main component as the main component of the contaminant, and arranged in a spectral light receiving region capable of receiving the spectrum 100 ″ from the diffraction grating 3 and detecting the photocurrent of the spectrum 100 ″ 5 and a wire driving unit (not shown) for moving and adjusting the carbon wire 5 to a position (described later) having the maximum intensity of the spectrum 100 ″ in the spectral light receiving area. With the above configuration, the mirror contamination detection means detects the amount of carbon as a contaminant based on the value of the photocurrent detected by the carbon wire 5.

【0020】カーボンワイヤ5の分光受光領域とは、分
光100′′の幅、即ち、回折格子3に入射および反射
される幅に基づく。ここで、分光100′′が強度分布
を呈することは勿論である。よって、分光受光領域のう
ちの分光100′′の最大強度である位置にカーボンワ
イヤ5をワイヤ駆動部により移動調整し、光電流を検出
することが、正確な検出を実現するために好ましい。
The spectral light receiving area of the carbon wire 5 is based on the width of the spectrum 100 ″, that is, the width of light incident on and reflected from the diffraction grating 3. Here, it is a matter of course that the spectrum 100 ″ exhibits an intensity distribution. Therefore, it is preferable to detect the photocurrent by moving and adjusting the carbon wire 5 by the wire driving unit to the position where the spectral intensity is 100 '' in the spectral light receiving area, to realize accurate detection.

【0021】尚、ミラー2の反射光100′を、回折格
子3を通さずに直接、カーボンワイヤ5に照射すること
でミラー汚染による反射率の低下を見積もることは可能
ではあるが、SR光100のKエッジによる284.2
eVの成分が他の成分に比べて少ないときには、回折格
子3によって分光することにより、高感度の検出が可能
である。つまり、ミラーの汚染物質の主成分が特定され
る場合には、その主成分元素の吸収作用を利用して汚染
を検出する方が効率がよい。
It is possible to estimate a decrease in reflectance due to mirror contamination by directly irradiating the carbon wire 5 with the reflected light 100 ′ from the mirror 2 without passing through the diffraction grating 3. 284.2 by K edge of
When the component of eV is small compared to the other components, high-sensitivity detection is possible by separating light with the diffraction grating 3. That is, when the main component of the contaminant of the mirror is specified, it is more efficient to detect the contamination using the absorption action of the main component.

【0022】一方、予め、清浄化されたミラー2、ある
いは装置動作に実質的支障が生ずる前の汚染度合いをも
ったミラー2で同様の検出を行って、そのときの光電流
値を基準値として記憶しておき、この基準値と検出値と
を比較することで、ミラー2の汚染の度合いについて、
清浄作業を要するか否かを判定するようにする。
On the other hand, the same detection is performed in advance by the mirror 2 which has been cleaned or the mirror 2 having a degree of contamination before the operation of the apparatus is substantially hindered, and the photocurrent value at that time is used as a reference value. By storing the reference value and the detected value, the degree of contamination of the mirror 2 can be determined.
It is determined whether or not cleaning work is required.

【0023】尚、反射光100′の光路範囲とは、ミラ
ー2の姿勢変化に基づく反射光100′の光路変化の範
囲をいう。したがって、本実施例においては、回折格子
駆動部4により、汚染の度合いを検出する時には回折格
子3を分光100′′を抽出できるように光路範囲内に
移動する一方、本SR光収束偏向装置の通常動作時には
その弊害とならないように回折格子3を光路範囲外に待
避させる。
Incidentally, the optical path range of the reflected light 100 'means the range of the optical path change of the reflected light 100' based on the change of the attitude of the mirror 2. Therefore, in the present embodiment, when the degree of contamination is detected by the diffraction grating driving unit 4, the diffraction grating 3 is moved into the optical path range so as to extract the spectrum 100 '', while the SR light converging / deflecting device of the present SR light is used. During normal operation, the diffraction grating 3 is retracted out of the optical path range so as not to adversely affect the operation.

【0024】また、回折格子3により、汚染物質の主成
分元素の吸収端にかかわる光子エネルギ近傍の分光10
0′′を抽出するためには、回折光子3からの出射角を
所定の角度にする必要がある。例えば、カーボン元素の
Kエッジにかかわる光子エネルギ284.2eV近傍を
分光するためには、回折光子3からの出射角を85゜
に、入射角を86゜にすることが好ましい。したがっ
て、本実施例における回折格子3の抽出角度は、ミラー
2からの反射光100′について入射角が86゜、出射
角が85゜となる角度である。尚、本実施例では、回折
格子3を図中上下方向に移動する構造であるので、回折
格子3は回折格子駆動部4の軸に対して上記抽出角度と
なるように予め固定しておき、以後角度調整する必要は
ない。
Further, the diffraction grating 3 allows the spectroscopy 10 near the photon energy related to the absorption edge of the main component element of the contaminant.
In order to extract 0 ″, the exit angle from the diffracted photon 3 needs to be a predetermined angle. For example, in order to split the wavelength around 284.2 eV of the photon energy related to the K edge of the carbon element, it is preferable to set the exit angle from the diffracted photon 3 to 85 ° and the incident angle to 86 °. Therefore, the extraction angle of the diffraction grating 3 in this embodiment is an angle at which the incident angle of the reflected light 100 ′ from the mirror 2 is 86 ° and the emission angle is 85 °. In this embodiment, since the diffraction grating 3 is configured to move vertically in the drawing, the diffraction grating 3 is fixed in advance at the above-mentioned extraction angle with respect to the axis of the diffraction grating driving unit 4. Thereafter, there is no need to adjust the angle.

【0025】以上説明したミラー汚染検出装置は、その
各駆動部による動作、ならびに光電流値の基準値の記憶
および検出値と基準値との比較等をマイクロコンピュー
タ等により構成される制御部によって制御することが可
能である。
In the mirror contamination detection apparatus described above, the operation of each drive unit, the storage of the reference value of the photocurrent value, the comparison of the detected value with the reference value, and the like are controlled by a control unit including a microcomputer or the like. It is possible to

【0026】以上説明した実施例は、汚染物質の主成分
元素がカーボンである場合のみに対応する構成である。
しかし、汚染物質の主成分が異なる複数種類の主成分候
補がある場合には、回折格子の抽出角度を検出すべき汚
染物質の主成分に応じて調整可能として各主成分元素の
吸収端にかかわる光子エネルギ近傍の分光を抽出するよ
うに回折光子からの出射角を各吸収端に応じた角度とす
ると共に、ワイヤとして主成分候補に対応するように主
成分が異なる複数種類のものを用意し、かつ用意したう
ちから検出すべき汚染物質の主成分に応じて選択的に分
光受光領域に移動する、即ち、汚染物質と同じ主成分か
ら成るワイヤを選択的に分光受光領域に移動する構成と
する。この場合にも、前述の制御部により、回折格子の
抽出角度の調整、ならびにワイヤの選択移動を制御する
ようにしてもよい。
The embodiment described above has a configuration corresponding only to the case where the main component element of the pollutant is carbon.
However, when there are a plurality of types of main component candidates having different main components of the contaminants, the extraction angle of the diffraction grating can be adjusted according to the main components of the contaminants to be detected, so that the extraction angle is related to the absorption edge of each main component. The extraction angle from the diffracted photon is set to an angle corresponding to each absorption edge so as to extract the spectrum near the photon energy, and a plurality of types of different main components are prepared as wires corresponding to the main component candidates, In addition, it is configured to selectively move to the spectral light receiving region according to the main component of the contaminant to be detected from the prepared, that is, to selectively move the wire composed of the same main component as the contaminant to the spectral light receiving region. . Also in this case, the control unit may control the adjustment of the extraction angle of the diffraction grating and the selective movement of the wire.

【0027】尚、本発明では、ミラー汚染検出装置によ
ってミラーの清浄が必要であるとわかった場合に、装置
を分解することなく、自動的にミラーを清浄する手段を
具備させることも可能である。
In the present invention, it is possible to provide a means for automatically cleaning the mirror without disassembling the apparatus when the mirror contamination detection apparatus determines that the mirror needs to be cleaned. .

【0028】また、本発明は、単に光路を変化させるよ
うなミラーの汚染を検出する場合にも、適用できる。
The present invention can also be applied to the case of detecting mirror contamination that simply changes the optical path.

【0029】[0029]

【発明の効果】本発明によるミラー汚染検出装置は、シ
ンクロトロン放射光発生装置からのシンクロトロン放射
光をミラーを介して被加工物に導いて加工を行う加工装
置に適用され、ミラーによる反射光の光路範囲内にて反
射光のうちからミラーに付着する汚染物質の主成分の元
素の吸収端にかかわる光子エネルギ近傍の分光を抽出可
能な抽出角度でもって配置される回折格子と、回折格子
を反射光の光路範囲内外に移動する回折格子駆動部と、
汚染物質の主成分と同じ主成分から成り、回折格子から
の分光を受光可能な分光受光領域に配置され、分光の光
電流を検出するワイヤとを有し、ワイヤにて検出した光
電流に基づいて汚染物質の付着量を検出するため、装置
の通常動作に支障を来すことがなく、また、装置を分解
することなくミラーの汚染を検出でき、工業的利用価値
は高い。
The mirror contamination detection apparatus according to the present invention is applied to a processing apparatus for performing processing by guiding synchrotron radiation light from a synchrotron radiation light generation apparatus to a workpiece through a mirror, and reflects light reflected by the mirror. A diffraction grating arranged at an extraction angle capable of extracting the spectrum near the photon energy related to the absorption edge of the element of the main component of the contaminant adhering to the mirror from the reflected light within the optical path range; A diffraction grating driving unit that moves inside and outside the optical path range of the reflected light;
A wire that is composed of the same main component as the main component of the contaminant, is disposed in a spectral light receiving region capable of receiving the spectrum from the diffraction grating, and has a wire for detecting the photocurrent of the spectrum, and based on the photocurrent detected by the wire. Since the amount of the contaminants attached is detected by the method, the normal operation of the apparatus is not hindered, and the contamination of the mirror can be detected without disassembling the apparatus.

【0030】また、簡素な構成ではあるものの、ミラー
の汚染を正確に検出できる。
Further, although the configuration is simple, the contamination of the mirror can be accurately detected.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例によるミラー汚染検出装置の
要部を示す図である。
FIG. 1 is a diagram showing a main part of a mirror contamination detection device according to an embodiment of the present invention.

【図2】カーボン付着量が異なる各種ミラーによる反射
光の光子エネルギと光子束の関係を示す図である。
FIG. 2 is a diagram showing the relationship between photon energy and photon flux of light reflected by various mirrors having different amounts of carbon deposition.

【図3】従来のシンクロトロン放射光による加工装置を
示す概念的な斜視図である。
FIG. 3 is a conceptual perspective view showing a conventional processing apparatus using synchrotron radiation.

【符号の説明】[Explanation of symbols]

1、13 真空ダクト 2 ミラー 3 回折格子 4 回折格子駆動部 5 カーボンワイヤ 11 シンクロトロン放射光発生装置 12 シンクロトロン放射光(SR光) 14 加工容器 16 ミラー 100 シンクロトロン放射光(SR光) 100′ 反射光 100′′ 分光 DESCRIPTION OF SYMBOLS 1, 13 Vacuum duct 2 Mirror 3 Diffraction grating 4 Diffraction grating driving part 5 Carbon wire 11 Synchrotron radiation light generator 12 Synchrotron radiation (SR light) 14 Processing container 16 Mirror 100 Synchrotron radiation (SR light) 100 ' Reflected light 100 '' spectral

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 シンクロトロン放射光発生装置からのシ
ンクロトロン放射光をミラーを介して被加工物に導いて
加工を行う加工装置に適用され、前記ミラーによる反射
光の光路範囲内にて該反射光のうちから該ミラーに付着
する汚染物質の主成分の元素の吸収端にかかわる光子エ
ネルギ近傍の分光を抽出可能な抽出角度でもって配置さ
れる回折格子と、前記回折格子を前記反射光の光路範囲
内外に移動する回折格子駆動部と、前記汚染物質の主成
分と同じ主成分から成り、前記回折格子からの前記分光
を受光可能な分光受光領域に配置され、該分光の光電流
を検出するワイヤとを有し、前記ワイヤにて検出した前
記光電流に基づいて前記汚染物質の付着量を検出するこ
とを特徴とするミラー汚染検出装置。
The present invention is applied to a processing apparatus for performing processing by guiding synchrotron radiation light from a synchrotron radiation light generation device to a workpiece via a mirror, and performing the reflection within the optical path range of the light reflected by the mirror. A diffraction grating arranged at an extraction angle capable of extracting a spectrum in the vicinity of photon energy relating to an absorption edge of an element of a main component of a contaminant attached to the mirror from light; and an optical path of the reflected light. A diffraction grating driving unit that moves in and out of the range, which is composed of the same main component as the main component of the contaminant, is disposed in a spectral light receiving region capable of receiving the spectrum from the diffraction grating, and detects a photocurrent of the spectrum. A mirror contamination detection device, comprising: a wire; and detecting an attached amount of the contaminant based on the photocurrent detected by the wire.
【請求項2】 前記ワイヤを前記分光受光領域のうちの
前記分光が最大強度である位置に移動調整するワイヤ駆
動部を有する請求項1記載のミラー汚染検出装置。
2. The mirror contamination detection device according to claim 1, further comprising a wire driving unit configured to move and adjust the wire to a position in the spectral light receiving area where the spectral power has the maximum intensity.
【請求項3】 前記汚染物質の主成分が複数種類の主成
分候補のうちのいずれかである場合に対応する請求項1
または2記載のミラー汚染検出装置であって、前記回折
格子は、検出すべき前記汚染物質の主成分に応じて前記
抽出角度を調整可能であり、前記ワイヤは、前記主成分
候補に対応するように主成分が異なる複数種類のものが
用意され、かつ用意されたうちから検出すべき前記汚染
物質の主成分に応じて選択的に前記分光受光領域に移動
されるミラー汚染検出装置。
3. The method according to claim 1, wherein the main component of the contaminant is one of a plurality of types of main component candidates.
Or the mirror contamination detection device according to 2, wherein the diffraction grating is capable of adjusting the extraction angle according to a main component of the contaminant to be detected, and the wire corresponds to the main component candidate. A mirror contamination detection device, wherein a plurality of types having different main components are prepared, and the prepared components are selectively moved to the spectral light receiving area according to the main components of the contaminants to be detected from the prepared main components.
JP7097048A 1995-04-21 1995-04-21 Mirror contamination detector Expired - Fee Related JP2946399B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7097048A JP2946399B2 (en) 1995-04-21 1995-04-21 Mirror contamination detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7097048A JP2946399B2 (en) 1995-04-21 1995-04-21 Mirror contamination detector

Publications (2)

Publication Number Publication Date
JPH08292157A JPH08292157A (en) 1996-11-05
JP2946399B2 true JP2946399B2 (en) 1999-09-06

Family

ID=14181782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7097048A Expired - Fee Related JP2946399B2 (en) 1995-04-21 1995-04-21 Mirror contamination detector

Country Status (1)

Country Link
JP (1) JP2946399B2 (en)

Also Published As

Publication number Publication date
JPH08292157A (en) 1996-11-05

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