JP2942138B2 - Plasma processing apparatus and plasma processing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for forming a thin film on a surface of a sample using plasma and etching the surface of the sample.

[0002]

2. Description of the Related Art FIG. 48 shows, for example, Japanese Unexamined Patent Publication No. 51-88182.
FIG. 1 is a cross-sectional view illustrating a structure of a conventional plasma processing apparatus described in Japanese Patent Application Laid-Open Publication No. H10-15095.

The processing chamber 51 is evacuated by a diffusion pump 53 and an auxiliary rotary pump 54 via a main valve 52 (hereinafter, the diffusion pump 53 and the auxiliary rotary pump 54 may be collectively referred to as an exhaust system). ).

A plasma generating chamber 55 is provided above the processing chamber 51.
Is provided in the plasma generation chamber 55.
7, 58 are arranged. The counter electrode 57 is provided with a plurality of holes 9, thereby partitioning the processing chamber 51 from the plasma generation chamber 55. A source gas cylinder 513 is connected to the gas introduction pipe 60 via a valve 511.

Next, the operation will be described. Gas inlet pipe 6
While the etching gas is introduced from 0 into the plasma generation chamber 55, the etching gas is exhausted from the plasma generation chamber 55 through the processing chamber 51 by the exhaust system. At this time, due to the conductance of the hole 9 provided between the plasma generation chamber 55 and the processing chamber 51, the plasma generation chamber 55 and the processing chamber 5
There is a pressure difference between the two.

For example, as a specific numerical value, the diameter is 0.1
7 holes 9 of .about.0.8 mm are provided, the effective exhaust speed of the exhaust system is 1000 L / sec, and the raw material gas flow rate is 50-100 c.
Under the condition of c / min, the pressure of the plasma generation chamber 55 is 1
The pressure in the processing chamber 51 is 1 × to 5 × 10 -1 (Torr).
10-3 (Torr) or less.

[0007] When RF power is supplied to the opposing electrodes 57 and 58, plasma is generated in the plasma generation chamber 55. The plasma etches the sample 16 placed in the processing chamber 51 through the hole 9.

[0008]

Since the conventional plasma processing apparatus is configured as described above, in order to process a large-diameter sample having a size of 8 inches or 10 inches in recent years, the sample is transported to the processing chamber 51. It is necessary to increase the area of the plasma.

To cope with this, it is conceivable to increase the diameter of the holes 9 or to provide a large number of holes 9 over a wide range. However, in any case, the plasma generation chamber 5
In order to maintain the pressure difference between the processing chamber 5 and the processing chamber 51, it is indispensable to greatly increase the exhaust system, and there is a problem that the apparatus becomes large. This is the first problem.

Further, discharge occurs concentratedly between the opposing electrodes 57 and 58, and the DC potential difference between the plasma and the electrodes also increases. Therefore, the surfaces of the counter electrodes 57 and 58 are easily sputtered. Due to the structure in which the plasma chamber 2 and the processing chamber 1 are separated from each other, most of the electrode material generated by this sputtering is transported to the sample 16 in the processing chamber 1 as a plasma flow, and adheres to the sample to remove metal contamination. There was a problem of causing. This is the second problem.

The present invention has been made to solve the first problem, and has a plasma chamber for generating plasma,
It is an object of the present invention to provide a technique for uniformly processing a large-diameter sample by large-area plasma while maintaining a pressure difference between the sample and a processing chamber in which the sample is processed.

The present invention has been made to solve the second problem, and has as its object to treat a sample without metal contamination.

[0013]

According to the first aspect of the present invention, there is provided (a) a plasma chamber in which a plasma is generated by an excitation source using a gas, and (b) a sample. A processing chamber, (c) a partition plate provided between the plasma chamber and the processing chamber and having a hole communicating with the processing chamber from the plasma chamber, and (d) vacuum exhaust means for exhausting the processing chamber. (E) a gas supply means for supplying the gas in a pulsed manner to the plasma chamber.

According to a second aspect of the present invention, there is provided the plasma processing apparatus according to the first aspect, wherein the gas supply means has a vacuum seal portion having a non-contact structure.

According to a third aspect of the present invention, the gas supply means includes (e-1) one end and the other end having a conical surface, and the gas supply means is provided between the one end and the other end. (E-2) a needle including a cone that reciprocates between the one end and the other end, and that is fitted with a gap with the conical surface at the other end; 3. The plasma processing apparatus according to claim 2, further comprising: a stopper configured to limit an area of the reciprocation of the needle to adjust the gap.

According to a fourth aspect of the present invention, in the plasma processing apparatus according to the fourth aspect, the gas supply means further includes (e-4) an electromagnetic induction means for controlling the reciprocating movement of the needle. Device.

According to a fifth aspect of the present invention, the plasma processing apparatus further comprises (f) a coil for applying a magnetic field to the plasma chamber, and the gas supply means (e-1) 2. The plasma processing apparatus according to claim 1, further comprising: an electromagnetic induction unit that controls an operation of the gas supply unit by electromagnetic induction; and (e-2) a magnetic shield that covers the electromagnetic induction unit. 3.

According to a sixth aspect of the present invention, the plasma processing apparatus further comprises (f) a coil for applying a first magnetic field to the plasma chamber, and the gas supply means comprises (e- 1) There is provided electromagnetic induction means for controlling the operation of the gas supply means by electromagnetic induction, and the gas supply means is arranged so that a second magnetic field generated by the electromagnetic induction means and the first magnetic field are orthogonal to each other. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is disposed.

According to a seventh aspect of the present invention, there is provided (f) a plurality of gas inlets interposed between the gas supply means and the plasma chamber, surrounding the plasma chamber, and introducing the gas. The plasma processing apparatus according to claim 1, further comprising an air storage tank having a hole.

According to the present invention, (f) detecting a back pressure of the gas supply means, and supplying the gas having a pressure controlled based on the back pressure to the gas supply means. The plasma processing apparatus according to claim 1, further comprising an adjusting unit.

According to a ninth aspect of the present invention, the regulator includes: (f-1) a pressure detector for detecting a back pressure of the gas supply means; and (f-2) a pressure of the gas. The plasma processing apparatus according to claim 8, further comprising: (f-3) a pressure controller that controls an operation of the pressure regulator based on an output of the pressure detector.

According to a tenth aspect of the present invention, there is provided (f) an air storage provided on a side opposite to the plasma chamber with respect to the gas supply means, wherein the gas is temporarily stored before entering the gas supply means. The plasma processing apparatus according to claim 1, further comprising a chamber.

According to the eleventh aspect of the present invention, in the plasma processing apparatus according to the tenth aspect, the gas storage chamber has a volume about 100 times as large as the gas flowing in a pulsed manner in the gas supply means. It is.

According to a twelfth aspect of the present invention, the excitation source is a microwave, (f) a waveguide for guiding the microwave to the plasma chamber, and (g) the waveguide. The plasma processing apparatus according to claim 1, further comprising an introduction surface interposed between the tube and the plasma chamber, the introduction surface being smaller than a cross-sectional area of the waveguide.

According to a thirteenth aspect of the present invention, the excitation source is a microwave, and the plasma chamber is surrounded by (a-1) a metal wall and (a-2) the wall. 2. The plasma processing apparatus according to claim 1, further comprising: a bell jar formed of a material that transmits the microwave. 3.

According to a fourteenth aspect of the present invention, the partition plate has (c-1) a gas introduction path connected to the gas supply means and for flowing the gas, and the gas is supplied to the partition wall. The plasma processing apparatus according to claim 13, wherein the plasma processing apparatus is supplied to a space surrounded by a plate and the bell jar.

According to a fifteenth aspect of the present invention, the excitation source is a microwave, (f) a waveguide for guiding the microwave, and (g) a waveguide for guiding the microwave. 2. The plasma processing apparatus according to claim 1, further comprising: a plate-shaped dielectric coupled from a tube to the plasma chamber.

According to the present invention, the microwave is coupled to the plasma chamber with an electric field component in a thickness direction of the plate-shaped dielectric. It is a plasma processing apparatus.

According to a seventeenth aspect of the present invention, there is provided (h) a magnetic field generating means which is formed near the plate-shaped dielectric and forms a magnetic field having a component orthogonal to the electric field direction of the microwave. 17. The plasma processing apparatus according to claim 16, further comprising:

In the invention according to claim 18, the excitation source is a microwave, (f) a waveguide that guides the microwave, and (g) a waveguide that penetrates the waveguide. ,
2. The plasma processing apparatus according to claim 1, further comprising a microwave-permeable gas transport pipe provided between said gas supply means and said plasma chamber.

According to a nineteenth aspect of the present invention, the excitation source is a microwave, and (f) a magnetic field intensity which is arranged around the plasma chamber and satisfies an electron cyclotron resonance condition in the plasma chamber. 2. The plasma processing apparatus according to claim 1, further comprising a magnetic field generating unit that forms an area, wherein the lines of magnetic force directed to the partition plate and the microwaves generate electron cyclotron resonance plasma in the plasma chamber. 3.

According to a twentieth aspect of the present invention, there is provided the plasma processing apparatus according to the nineteenth aspect, wherein the magnetic field intensity region is formed near the partition plate.

According to a twenty-first aspect of the present invention, there is provided the plasma processing apparatus according to the ninth or twentieth aspect, wherein the magnetic field intensity region is formed substantially parallel to the partition plate.

According to a twenty-second aspect of the present invention, there is provided the plasma processing apparatus according to any one of the nineteenth to twenty-first aspects, wherein the position of the magnetic field intensity region changes with time.

According to a twenty-third aspect of the present invention, the excitation source is RF power, and (f) an RF application electrode provided in the plasma chamber; and (g) a surface of the RF application electrode. The plasma processing apparatus according to claim 1, further comprising a covering dielectric film, wherein the RF power is applied between the RF application electrode and the partition plate.

According to a twenty-fourth aspect of the present invention, the excitation source is RF power, the plasma chamber has a side wall made of (a-1) dielectric, and the plasma processing apparatus is The plasma according to claim 1, further comprising: (f) an RF coil disposed around the side wall; and (g) a conductive material covering a surface of the RF coil, wherein the RF power is supplied by the RF coil. Processing device.

According to a twenty-fifth aspect of the present invention, the thickness of the conductive material is smaller than a skin thickness determined by the conductivity of the conductive material and the frequency of the RF power. Is a plasma processing apparatus.

According to a twenty-sixth aspect of the present invention, the excitation source is light, and the plasma chamber is (a-
1) The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus has at least one window that transmits the light.

According to a twenty-seventh aspect of the present invention, there is provided the plasma processing apparatus according to the twenty-fourth aspect, wherein the plasma chamber further comprises (a-2) an insulating film covering an inner wall of the plasma chamber.

According to a twenty-eighth aspect of the present invention, the excitation source is a laser beam, and the plasma processing apparatus further comprises (f) a convex mirror for expanding the laser beam.
A plasma processing apparatus according to claim 27.

According to a twenty-ninth aspect of the present invention, the excitation source is heat, and the plasma processing apparatus is (f) interposed between the gas supply means and the plasma chamber. Further comprising a heating device for supplying
The plasma chamber is (a-2) an insulating film covering an inner wall of the plasma chamber.
Further that having a a plasma processing apparatus according to claim 1.

[0042]

According to a thirty -first aspect of the present invention, the plasma chamber includes (a-1) Si, Al, O,
2. The plasma processing apparatus according to claim 1, further comprising an inner wall made of a compound containing 99% or more of any one of N and N or a plurality of elements. 3.

According to a thirty-first aspect of the present invention, there is provided the plasma processing apparatus according to the first aspect, wherein a plurality of the holes are provided, and the holes have the same diameter.

[0045] Of the present invention, such as is in claim 32, wherein the hole is provided with a plurality, their diameter is a plasma processing apparatus according to claim 1, wherein there are a plurality of kinds.

According to a thirty-third aspect of the present invention, the diameter of the hole present at the center of the partition plate is smaller than the diameter of the hole present at the periphery of the partition plate. Item 30. A plasma processing apparatus according to item 25.

According to a thirty-fourth aspect of the present invention, the hole has a cylindrical first hole element having a first diameter on the plasma chamber side and a second diameter element on the processing chamber side. 2. The plasma processing apparatus according to claim 1, further comprising: a second hole element having a cylindrical shape, the first diameter being larger than the second diameter. 3.

According to a thirty-fifth aspect of the present invention, there is provided the plasma processing apparatus according to the first aspect, wherein at least the surface of the partition plate is made of quartz glass.

According to a thirty- sixth aspect of the present invention, in the plasma processing according to the first aspect, the partition plate is made of an insulator, and a DC voltage is applied between the partition plate and the plasma chamber. Device.

According to a thirty-seventh aspect of the present invention, in the plasma processing apparatus according to the thirteenth aspect, the partition plate is made of an insulator, and an RF voltage is applied between the partition plate and the plasma chamber. Device.

According to a thirty- eighth aspect of the present invention, there is provided the plasma processing apparatus according to the first aspect, wherein a magnetic field is formed in the processing chamber.

A plasma processing apparatus according to a thirty-ninth aspect of the present invention is the plasma processing apparatus according to the thirty- eighth aspect, further comprising (f) a magnetic field coil for a processing chamber formed around the processing chamber.

A plasma processing apparatus according to claim 40 of the present invention is the plasma processing apparatus according to claim 38 , further comprising (f) a permanent magnet formed around the processing chamber.

[0054] The plasma processing apparatus according to claim 41 is the plasma processing apparatus according to claim 1, wherein a DC voltage is applied between the sample and the processing chamber.

[0055] Of the present invention, is that according to claim 42, a plasma processing apparatus according to claim 1, wherein applying RF power between the process chamber and the sample.

[0056] Of the present invention, is that according to claim 43, the magnitude of the DC voltage varies with a positive correlation with respect to the temporal change of the pressure of the gas in the processing chamber, according to claim 41 Is a plasma processing apparatus.

[0057] Of the present invention, is that according to claim 44, the magnitude of the DC voltage changes with a negative correlation with respect to the temporal change of the pressure of the gas in the processing chamber, according to claim 41 Is a plasma processing apparatus.

According to a forty- fifth aspect of the present invention, the magnitude of the amplitude of the RF power applied to the sample is temporally changed corresponding to the temporal change of the gas pressure in the processing chamber. A plasma processing apparatus according to claim 1.

[0059] Of the present invention, is that according to claim 46, a plasma processing apparatus according to claim 1, further comprising a bypass for communicating with the processing chamber and (f) the plasma chamber.

[0060] Of the present invention, is that according to claim 47, wherein the bypass has a conductance valve for controlling the conductance of the (f-1) the bypass, a plasma processing apparatus according to claim 46.

According to a 48th aspect of the present invention, the plasma processing apparatus according to the 1st aspect, further comprising (f) second vacuum exhaust means for exhausting the plasma chamber independently of the processing chamber. is there.

According to a 49th aspect of the present invention, the excitation source comprises: an excitation energy supply unit for supplying excitation energy for exciting the plasma; and an excitation energy supply unit for controlling the excitation energy supply unit to supply the excitation energy. 2. The plasma processing apparatus according to claim 1, further comprising: an excitation energy control unit that changes with time.

According to a fifty aspect of the present invention, the excitation energy turns on when the pressure of the gas in the processing chamber is relatively high, and turns off when the pressure of the gas in the processing chamber is relatively low. 50. A plasma processing apparatus according to item 49 .

According to a fifty-first aspect of the present invention, the excitation energy turns on when the pressure of the gas in the processing chamber is relatively low and turns off when the pressure of the gas in the processing chamber is relatively high. 50. A plasma processing apparatus according to item 49 .

[0065] Of the present invention, is that according to claim 52, wherein the gas supply means is a plasma processing apparatus according to claim 1 which is plurality.

The plasma processing apparatus according to claim 53 is the plasma processing apparatus according to claim 52 , wherein at least one of the plurality of gas supply means introduces a deposition gas.

The plasma processing apparatus according to claim 54 is the plasma processing apparatus according to claim 52 , wherein at least one of the plurality of gas supply means introduces a rare gas.

The plasma processing apparatus according to claim 55 , further comprising: (f) second gas supply means for supplying a second gas to the processing chamber in a pulsed manner. It is.

According to a 56th aspect of the present invention, the second gas supply means is configured to set the processing chamber near the timing at which the temporal change in the pressure of the gas in the processing chamber takes a maximum value. supplying a second gas to claim 5
6. The plasma processing apparatus according to 5 .

[0070] Of the present invention, is that according to claim 57, wherein the gas is intended to generate a non-reactive plasma, said second gas is to produce a reactive plasma claim 55, wherein 59. A plasma processing apparatus according to item 56 .

According to a fifty- eighth aspect of the present invention, there is provided a plasma processing method for performing plasma processing on a sample placed in a processing chamber by using plasma generated in a plasma chamber. A step of introducing a gas having a varying pressure into the plasma chamber; and (b) a step of introducing plasma from the plasma chamber to the processing chamber via a selective path.

[0072] Of the present invention, is that according to claim 59, wherein in the step (b), the period in which the pressure of the plasma chamber becomes equal to or higher than 1.9 times the pressure of the processing chamber is present, according to claim 58 It is a plasma processing method described.

[0073] Of the present invention, is that according to claim 60, wherein the plasma is excited by light, according to claim 58
It is a plasma processing method described.

[0074]

[0075] The invention according to claim 61 is the plasma processing method according to claim 58 , wherein a magnetic field is formed in the processing chamber.

[0076] Of the present invention, is that according to claim 62, a plasma processing method according to claim 58, wherein a DC voltage is applied between the processing chamber and the sample.

[0077] The invention according to claim 63 is the plasma processing method according to claim 58 , wherein RF power is applied between the sample and the processing chamber.

[0078] Of the present invention, is that according to claim 64, the magnitude of the DC voltage varies with a positive correlation with respect to the temporal change of the pressure of the gas in the processing chamber, according to claim 62, wherein Is a plasma processing method.

[0079] Of the present invention, which according to claim 65, the size of the DC voltage changes with a negative correlation with respect to the temporal change of the pressure of the gas in the processing chamber, according to claim 62, wherein Is a plasma processing method.

[0080] Of the present invention, it is that according to claim 66, corresponding to time course of the pressure of the gas in the processing chamber, thereby temporally changing the magnitude of the amplitude of the RF power applied to the sample A plasma processing method according to claim 58 .

According to a 67th aspect of the present invention, there is provided the plasma processing method according to the 58th aspect , wherein the excitation energy given from the excitation source changes with time.

In the invention according to claim 68 , the excitation energy is turned on when the pressure of the gas in the processing chamber is relatively high, and is turned off when the pressure of the gas in the processing chamber is relatively low, and changes. 68. A plasma processing method according to item 67 .

In the invention according to claim 69 , the excitation energy turns on when the pressure of the gas in the processing chamber is relatively low, and turns off when the pressure of the gas in the processing chamber is relatively high. 68. A plasma processing method according to item 67 .

According to a seventy aspect of the present invention, there is provided the plasma processing method according to the fifty- eighth aspect, wherein a plurality of the gases are introduced into the plasma chamber.

[0085] The invention according to claim 71 is the plasma processing method according to claim 70 , wherein at least one of the gases is a deposition gas.

[0086] Of the present invention, is that according to claim 72, wherein at least one of the gas is a noble gas, claim
70. A plasma processing method according to 70 .

[0087] Of the present invention, is that according to claim 73, which is (c) according to claim 58, wherein the plasma processing method further comprising a pulse to feeding step the second gas into the processing chamber.

According to a seventy- fourth aspect of the present invention, the second gas is supplied to the processing chamber near a timing at which a temporal change in the pressure of the gas in the processing chamber takes a maximum value. A plasma processing method according to claim 58 .

[0089] Of the present invention, it is that according to claim 75, wherein the gas is intended to generate a non-reactive plasma, said second gas claim 73 or claim is intended to produce a reactive plasma Item 74 is a plasma processing method according to Item 74 .

[0090]

In the plasma processing apparatus according to the first aspect of the present invention, the gas is pulsed into the plasma chamber by the pulse gas supply means.

In the plasma processing apparatus according to claim 2 of the present invention, the vacuum seal portion of the pulse gas supply means is not in contact, and generation of impurities is suppressed.

In the plasma processing apparatus according to claim 3 of the present invention, the conical needle is movable with a slight gap from the gas introducing cylinder by the stopper.

In the plasma processing apparatus according to the fourth aspect of the present invention, the needle reciprocates by the electromagnetic induction means.

In the plasma processing apparatus according to claim 5 of the present invention, the magnetic shield prevents the magnetic field from affecting the electromagnetic induction means for controlling the operation of the needle.

In the plasma processing apparatus according to claim 6 of the present invention, since the first magnetic field and the second magnetic field are orthogonal to each other, the influence of the second magnetic field on the first magnetic field can be suppressed.

In the plasma processing apparatus according to claim 7 of the present invention, the gas supplied to the gas supply means temporarily enters the gas storage tank, and enters the plasma chamber from the plurality of gas introduction holes provided in the gas storage tank. be introduced.

In the plasma processing apparatus according to claim 8 of the present invention, the pressure of the gas is adjusted by detecting the back pressure of the gas supply means.

In the plasma processing apparatus according to the ninth aspect of the present invention, while the pressure detector detects the back pressure, the pressure of the gas is adjusted via the pressure adjuster by the pressure controller.

In the plasma processing apparatus according to the tenth aspect of the present invention, the supplied gas is temporarily stored in the gas storage chamber and then supplied to the plasma chamber via the gas supply means.

In the plasma processing apparatus according to the eleventh aspect of the present invention, the capacity of the storage chamber is sufficiently larger than the flow rate of the gas flowing in a pulsed manner.

In the plasma processing apparatus according to the twelfth aspect of the present invention, since the introduction surface is smaller than the planarity of the waveguide, a higher-order mode is generated in the vicinity thereof, and a high electric field is generated.

In the plasma processing apparatus according to the thirteenth aspect of the present invention, the bell jar transmits microwaves, and the metallic wall has a microwave resonance structure.
Discharge is caused by microwaves transmitted through the bell jar.

In the plasma processing apparatus according to claim 14 of the present invention, the gas is supplied to the space surrounded by the partition plate and the bell jar, so that discharge is performed in that space.

In the plasma processing apparatus according to the present invention, the microwave introduced from the plate-like dielectric generates a strong electric field in the plasma chamber.

According to the plasma processing apparatus of the present invention, the plasma is generated by the microwave having the electric field component in the thickness direction of the plate-shaped dielectric.

In the plasma processing apparatus according to the seventeenth aspect of the present invention, a magnetic field orthogonal to the microwave electric field near the plate-shaped dielectric causes electron cyclotron resonance.

In the plasma processing apparatus according to the eighteenth aspect of the present invention, microwaves are applied to the gas via the gas transport pipe.

In the plasma processing apparatus according to the nineteenth aspect of the present invention, since a magnetic field intensity region satisfying the ECR resonance condition is formed in the plasma chamber, the ECR resonance between the lines of magnetic force directed toward the partition plate and the microwaves. A plasma is generated, and the transport of the plasma is assisted by the magnetic field lines.

In the plasma processing apparatus according to the twentieth aspect of the present invention, since the magnetic field intensity region satisfying the ECR resonance condition is formed near the partition plate, the plasma can be transported efficiently.

In the plasma processing apparatus according to the twenty-first aspect of the present invention, plasma is generated in a magnetic field intensity region formed substantially parallel to the partition plate and satisfying the ECR resonance condition.

In the plasma processing apparatus according to claim 22 of the present invention, the plasma is generated corresponding to the position of the magnetic field intensity region satisfying the time-varying ECR resonance condition.

[0112] In the plasma processing apparatus according to claim 23 of the present invention, RF power is applied through a dielectric film covering the RF application electrode to discharge the gas.

In the plasma processing apparatus according to claim 24 of the present invention, since RF power is supplied using the RF coil, there is no RF applying electrode.

[0114] In the plasma processing apparatus according to claim 25 of the present invention, the RF coil is electrostatically shielded by a conductive material in terms of direct current, so that no DC electric field is generated in the plasma. On the other hand, the RF coil is inductively coupled to generate a discharge from the side wall and combine with the plasma.

In the plasma processing apparatus according to claim 26 of the present invention, the plasma is excited by light introduced from at least one window.

In the plasma processing apparatus according to claim 27 of the present invention, since the inner wall of the plasma chamber is covered with the insulating film, clean plasma is transported to the processing chamber.

In the plasma processing apparatus according to claim 28 of the present invention, the laser light is expanded by the convex mirror, and the plasma is excited by the laser light.

In the plasma processing apparatus according to claim 29 of the present invention, the plasma is excited by heat ,
Since the inner wall of the plasma chamber is covered with an insulating film,
Plasma is transported to the processing chamber.

[0119]

[0120] In the plasma processing apparatus according to claim 30 of the present invention, since the inner wall of the plasma chamber is covered with quartz or the like, clean plasma is transported to the processing chamber.

In the plasma processing apparatus according to the thirty-first aspect of the present invention, plasma is transported from the holes having the same diameter to the processing chamber.

In the plasma processing apparatus according to claim 32 of the present invention, the plasma is transported from the holes having different diameters to the processing chamber.

In the plasma processing apparatus according to claim 33 of the present invention, since the diameter of the hole is smaller toward the center of the partition plate, uniform plasma can be transported to the processing chamber when the plasma density is high near the center. Can be.

In the plasma processing apparatus according to claim 34 of the present invention, the holes are provided in a spot facing shape.

In the plasma processing apparatus according to claim 35 of the present invention, since at least the surface of the partition plate is made of quartz glass, the plasma is prevented from containing heavy metals even when sputtered.

In the plasma processing apparatus according to claim 36 of the present invention, since a DC voltage is applied between the partition plate and the plasma chamber, the energy of charged particles is controlled, and the ratio of ions to radicals is controlled. it can.

In the plasma processing apparatus according to claim 37 of the present invention, the distance between the partition wall plate and the plasma chamber is reduced.
Since the F voltage is applied, the energy of the charged particles can be controlled, and the ratio between ions and radicals can be controlled.

In the plasma processing apparatus according to claim 38 of the present invention, since a magnetic field is formed in the processing chamber, the density of the plasma to be transported can be increased.

In the plasma processing apparatus according to claim 39 of the present invention, the processing chamber magnetic field coil applies a variable magnetic field to the processing chamber.

[0130] In the plasma processing apparatus according to claim 40 of the present invention, the permanent magnet applies a magnetic field to the processing chamber.

In the plasma processing apparatus according to claim 41 of the present invention, it is possible to control the amount of plasma incident on the sample by applying a DC voltage between the sample and the processing chamber.

In the plasma processing apparatus according to claim 42 of the present invention, the RF voltage is applied between the sample and the processing chamber to prevent plasma diffusion.

In the plasma processing apparatus according to claim 43 of the present invention, the magnitude of the DC voltage is increased when the gas pressure is high, and plasma having a large radical / ion ratio is generated.

In the plasma processing apparatus according to claim 44 of the present invention, the magnitude of the DC voltage is increased when the gas pressure is low, and plasma having a small radical / ion ratio is generated.

In the plasma processing apparatus according to claim 45 of the present invention, the radical / ion ratio is controlled by making the amplitude of the RF power dependent on the change in gas pressure.

In the plasma processing apparatus according to claim 46 of the present invention, since a bypass is provided between the plasma chamber and the processing chamber, the pressure region of both chambers can be expanded.

In the plasma processing apparatus according to claim 47 of the present invention, since the conductance valve is provided in the bypass, the conductance in the bypass can be adjusted.

In the plasma processing apparatus according to claim 48 of the present invention, the processing chamber and the plasma chamber can be separately evacuated to freely control the pressure in both chambers.

In the plasma processing apparatus according to claim 49 of the present invention, since the energy for exciting the plasma is changed with time, it is possible to control various amounts of the plasma over a wide range.

In the plasma processing apparatus according to claim 50 of the present invention, when the gas pressure is high, the excitation energy is increased to generate plasma having a large radical / ion ratio.

In the plasma processing apparatus according to claim 51 of the present invention, when the gas pressure is low, the excitation energy is increased to generate plasma having a small radical / ion ratio.

In the plasma processing apparatus according to claim 52 of the present invention, by providing a plurality of gas supply means, different types of gases can be introduced into the plasma chamber under different conditions.

In the plasma processing apparatus according to claim 53 of the present invention, since at least one of the gas supply means introduces the deposition gas, the etching of the sample in the parallel direction is suppressed.

In the plasma processing apparatus according to claim 54 of the present invention, since at least one of the gas supply means introduces a rare gas, the temperature of the plasma can be reduced.

In the plasma processing apparatus according to claim 55 of the present invention, since the second gas supply means supplies the second gas to the processing chamber, various plasma amounts can be controlled.

In the plasma processing apparatus according to claim 56 of the present invention, since the second gas is introduced when the gas pressure in the processing chamber is high, it is possible to efficiently generate plasma.

In the plasma processing apparatus according to claim 57 of the present invention, since the non-reactive gas is introduced into the plasma chamber and the reactive gas is introduced into the processing chamber, the walls of the processing chamber may be etched. Absent.

In the plasma processing method according to claim 58 of the present invention, the gas is pulsed into the plasma chamber by the pulse gas supply means.

In the plasma processing method according to claim 59 of the present invention, the pressure of the plasma chamber is set to 1.9 times or more of the pressure of the processing chamber to make the plasma a supersonic flow.

[0150] In the plasma processing method according to claim 60 of the present invention, plasma is Ru is excited by light
Than, contribute electric field to the sputtering does not occur.

[0151]

In the plasma processing method according to claim 61 of the present invention, a magnetic field is formed in the processing chamber to assist in transporting the plasma to the processing chamber.

In the plasma processing method according to claim 62 of the present invention, a DC voltage is applied between the sample and the processing chamber to control various amounts of plasma incident on the sample.

In the plasma processing method according to claim 63 of the present invention, an RF voltage is applied between the sample and the processing chamber to control various amounts of plasma incident on the sample.

In the plasma processing method according to claim 64 of the present invention, the magnitude of the DC voltage is increased when the gas pressure is high, and plasma having a large radical / ion ratio is generated.

In the plasma processing method according to claim 65 of the present invention, the magnitude of the DC voltage is increased when the gas pressure is low, and plasma having a small radical / ion ratio is generated.

In the plasma processing method according to claim 66 of the present invention, the radical / ion ratio is controlled by making the amplitude of the RF power dependent on the change in gas pressure.

In the plasma processing method according to claim 67 of the present invention, since the energy for exciting the plasma is changed with time, various amounts of the plasma are controlled.

In the plasma processing method according to claim 68 of the present invention, when the gas pressure is high, the excitation energy is increased to generate plasma having a large radical / ion ratio.

In the plasma processing method according to claim 69 of the present invention, when the gas pressure is low, the excitation energy is increased to generate plasma having a small radical / ion ratio.

In the plasma processing method according to claim 70 of the present invention, a plurality of types of gases are introduced into the plasma chamber to control the amount of plasma in a wide range.

In the plasma processing method according to claim 71 of the present invention, since at least one of the gases is a deposition gas, etching of the sample in the parallel direction is suppressed.

In the plasma processing method according to claim 72 of the present invention, since at least one of the gases is a rare gas, the temperature of the plasma can be reduced.

In the plasma processing method according to claim 73 of the present invention, since the second gas supplies the second gas to the processing chamber, it is possible to control various amounts of plasma in a wide range.

In the plasma processing method according to claim 74 of the present invention, since the second gas is introduced when the gas pressure in the processing chamber is high, plasma can be generated efficiently.

In the plasma processing method according to claim 75 of the present invention, since the non-reactive gas is introduced into the plasma chamber and the reactive gas is introduced into the processing chamber, the walls of the processing chamber may be etched. Absent.

[0167]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments according to the present invention are roughly classified into eight types. Hereinafter, a basic embodiment will be described first, and then the embodiment will be sequentially described in eight types.

(0) Basic Embodiment: (0-1) First Embodiment Here, the first embodiment of the plasma processing apparatus according to the present invention is described with respect to a dry etching apparatus using electron cyclotron resonance plasma. explain.

FIG. 1 is a sectional view schematically showing the configuration of a dry etching apparatus to which the present invention is applied. The processing chamber 1 has a stage 6 on which a sample 7 is placed. The plasma chamber 2 is installed above the processing chamber 1 and has a waveguide 11.
Microwaves are introduced from through the microwave introduction window 12.

An etching gas is supplied to the plasma chamber 2 via a gas introduction pipe 10 and a pulse gas valve 8.
The pulse gas valve 8 is controlled by a driving device 9 and supplies an etching gas to the plasma chamber 2 in a pulsed manner.

The partition plate 3 separates the plasma chamber 2 from the processing chamber 1 and has a hole 4. The exhaust port 5 is connected to an exhaust system (not shown), and evacuates the processing chamber 1.
A magnetic field coil 13 for applying a magnetic field to the plasma chamber 2 is provided near the plasma chamber 2.

In the dry etching apparatus configured as described above, the plasma chamber 2 is connected to the pulse gas valve 8.
Is passed through the processing chamber 1 from the hole 4 of the partition plate 3 and is exhausted from the exhaust port 5.

At this time, a microwave of 2.45 GHz was introduced into the plasma chamber 2 and the magnetic field coil 13 was used.
When an 875 Gauss magnetic field is created within, an electron cyclotron resonance plasma is created. The generated plasma is transported from the hole 4 of the partition plate 3 to the processing chamber 1 and etches the sample.

The pulse gas valve 8 is turned on and off by a signal from the drive unit 9. Pulse gas valve 8 is O
During the opening in the N state, an etching gas is introduced and O
While closed in the FF state, the supply of the etching gas is stopped.

If the evacuation capacity of the evacuation system is constant, the pressures of the plasma chamber 2 and the processing chamber 1 change with time as the pulse gas valve 8 operates. When the pulse gas valve 8 is turned on and the etching gas is introduced, the pressure in the plasma chamber 2 temporarily rises, and a state in which the pressure difference from the processing chamber 1 becomes large is realized.

Therefore, even in the case where the large number of holes 4 in the partition plate 3 and a large number of holes 4 are provided in a wide range in order to guide a large-area plasma to the processing chamber 1 corresponding to a large-diameter sample, the conventional technique was used. As compared with the steady gas supply, the pressure difference between the plasma chamber 2 and the processing chamber 1 can be kept large.

FIG. 2 is a graph showing pressure characteristics when an etching gas is supplied in pulses. Hereinafter, a dry etching apparatus capable of etching an 8-inch sample will be described with reference to FIG.

The graph of FIG. 2 shows the result of calculating the pressure change of the plasma chamber 2 and the processing chamber 1 by the pulsed etching gas under the ideal gas, isentropy, and one-dimensional flow. Here, the supply etching gas is chlorine gas, the supply gas temperature is normal temperature, the supply gas pressure is 1 atm, the gas supply hole diameter of the pulse gas valve 8 is 0.5 mm,
The volume of the plasma chamber 2 is 10 liters, the volume of the processing chamber 1 is 50 liters, and the effective evacuation speed is 1000 liters /
The area of the hole 4 of the partition plate 3 is about 7.0 cm @ 2, the operating conditions of the pulse gas valve are ON time 2 msec, and repetition time 500 msec.

As shown in FIG. 2, the pressure in the plasma chamber 2 is kept in a range of 1 × 10 −3 (Torr) or more at which electron cyclotron resonance plasma can be stably generated. On the other hand, the pressure in the processing chamber 1 is 1 × 10 −4 (T
(or) high vacuum and the plasma chamber 2
The pressure difference between the pressure and the processing chamber 1 is about one digit.

The area 7.0 cm 2 of the hole 4 of the partition plate 3 used in the calculation corresponds to the total area in which about 200 holes having a diameter of 2 mm are provided. In other words, if the holes of 2 mm are arranged at an appropriate interval in a range of 20 cm in diameter, the plasma can be uniformly transported to an 8-inch size sample. In addition, since the degree of vacuum in the processing chamber 1 is not deteriorated, vertical etching by plasma having a direction component perpendicular to the sample surface,
Fine processing with a small microloading effect becomes possible. Therefore, a large-diameter sample can be uniformly etched while having the features described in the conventional example.

In the above description, the etching apparatus has been described. However, the same effects can be obtained by applying the present invention to a film forming apparatus such as a plasma CVD apparatus or a plasma sputtering apparatus. For example, when silane-based SiH4 is introduced as a CVD gas, SiH4 is decomposed by electric discharge and a silicon deposition film can be formed on a sample.

As the pulse gas valve 8, an electromagnetic coil type or a piezoelectric element type pulse gas valve can be used.

(0-2) Second Embodiment: This embodiment is intended to perform the etching perpendicular to the sample surface by lowering the plasma temperature, in addition to the effects of the first embodiment. .

In the case where the gas introduced into the plasma chamber 2 is a diatomic molecule, the pressure in the plasma chamber 2 is 1.
When it is set to be 9 times or more, the gas introduced into the plasma chamber 2 from the hole 4 of the partition plate 3 becomes a supersonic flow, and the temperature of the plasma decreases due to adiabatic expansion.

Since the plasma temperature can be reduced in this manner, when performing an etching process, etching perpendicular to the sample surface can be performed.

The region where the supersonic flow is formed becomes wider as the pressure difference between the plasma chamber 2 and the processing chamber 1 increases. Therefore, when the gas supply to the processing chamber 1 is performed in a pulsed manner as shown in the first embodiment, the pressure difference can be increased,
Since a supersonic flow is formed in a wide area, a sample having a larger area can be processed.

Of course, in the second embodiment, similar to the first embodiment, the same effects can be obtained when applied to a film forming apparatus such as a plasma CVD apparatus and a plasma sputtering apparatus.

(1) Embodiment relating to gas introduction technology: (1-1) Third embodiment: FIG. 3 shows the structure of a valve 8a which can be used as the pulse gas valve 8 in the first and second embodiments described above. FIG. 1 is a schematic sectional view illustrating a fuel injector, and is generally called a fuel injector. The valve 8a is an electromagnetic coil type pulse valve.

When a current is supplied to the electromagnetic coil 104 in a state where gas is supplied from the gas inlet 106 (ON state), the needle 102 moves in the direction of the solid line arrow and the needle 102 moves.
And the body 101 is opened, the gas flows, and the gas is discharged from the gas outlet 105. On the other hand, if no current is supplied (OFF state), the needle 102 moves in the direction of the dashed arrow due to the repulsive force of the spring 103, and the body 101
And vacuum sealed. Therefore, the gas is supplied to the gas outlet 1
Not released from 05. Therefore, by making the current flowing through the electromagnetic coil 104 into a pulse, the gas can be discharged from the gas outlet 105 in a pulse.

However, in this case, the vacuum seal is
Since this is performed by mechanical contact between the needle 01 and the needle 102, fine metal powder is released together with the gas. A pulse gas valve using a piezo element called a molecular beam valve (for example, MODEL203B manufactured by Laser Technics)
Is commercially available), the problem of metal powder is avoided because it is vacuum-sealed by an O-ring, but impurities are mixed into the gas by a highly reactive etching gas generally used as an etching gas. . These powders,
Impurities have a problem that they adhere to the sample as foreign matter when they are subjected to microfabrication on the order of μm or less.

In the third embodiment, an improvement of the pulse gas valve for solving the above problem will be described.

FIG. 4 is a schematic sectional view showing the structure of a pulse gas valve 8b according to the third embodiment. The pulse gas valve 8b has a configuration in which a stopper 107 is provided inside the body 101 of the pulse gas valve 8a, and the needle 102 is replaced with a needle 112.

The operation of the pulse gas valve 8b is the same as that of the pulse gas valve 8a, and a pulse-like current is supplied to the electromagnetic coil 104 with the gas supplied from the gas inlet 106. Then, in response to the ON / OFF of the current, the needle 11 is moved by the electromagnetic force and the repulsive force of the spring 103.
2 moves in the directions of the solid arrow and the broken arrow, respectively.

However, in the pulse gas valve 8b, since the stopper 107 adjusts the moving position of the needle 112 due to the repulsive force of the spring 1033, the needle 112 does not contact the inside of the body 101 even in the OFF state. That is, the needle 112 and the body 101 have a slight gap that is adjusted by the stopper 107 and is small enough to prevent mechanical contact.

In this state, the gas cannot be completely sealed, but the gas flow becomes very small due to the large conductance generated in the small gap, and the gas supply can be substantially stopped. In addition, since the vacuum sealing is performed in a non-contact manner, generation of metal powder due to collision between the needle 112 and the body 101 is also avoided.

During the period when the current flowing through the electromagnetic coil 104 is in the ON state, the needle 1 is turned on similarly to the pulse gas valve 8a.
The gap between 12 and the body 101 is opened, the conductance is reduced, and gas is discharged from the gas outlet 105 in a pulsed manner.

In order to increase the conductance in a small gap, it is desirable to set the area of the gap as large as possible. Therefore, for example, the needle 112
Is desirably formed in a cone shape.

(1-2) Fourth Embodiment: When the pulse gas valve 8 is of an electromagnetic coil type, for example, when the pulse gas valve 8b described in the third embodiment is used, the generation of the electromagnetic coil 104 of the pulse gas valve 8b is generated. In addition to the generated magnetic field lines, the magnetic field lines generated by the magnetic field coil 13 may affect the operation of the needle 112 in some cases.
This leads to instability of the pulse operation. The fourth embodiment provides an improvement to avoid such a problem.

FIG. 5 shows the etching apparatus shown in FIG.
It is an outline sectional view showing the composition at the time of applying an example.
The magnetic field coil 13 applies a magnetic field 121 of 875 GAUSS to the plasma chamber 2 to generate an electron cyclotron resonance plasma. In the fourth embodiment, the pulse gas valve 8 made of a magnetic material is covered with a magnetic shield 122 in order to avoid this effect.

Therefore, even if the direction of the magnetic field 121 is parallel to the direction of the magnetic field generated by the electromagnetic induction means (for example, the electromagnetic coil 104 in the case of the pulse gas valve 8b) of the pulse gas valve 8, the magnetic shield made of a magnetic material is used. 12
2, the influence of the magnetic field 121 can be reduced and the operation of the pulse gas valve 8 can be kept normal.

(1-3) Fifth Embodiment: FIG. 6 is a schematic sectional view showing a configuration in a case where the fifth embodiment is applied to the etching apparatus shown in FIG. According to the fifth embodiment, similarly to the fourth embodiment, the influence of the magnetic field 121 on the pulse gas valve 8 can be reduced.

In the fifth embodiment, the pulse gas valve 8 is arranged such that the direction of the magnetic field generated by the electromagnetic induction means for controlling the operation of the pulse gas valve 8 is orthogonal to the direction of the magnetic field 121. Therefore, the influence of the magnetic field 121 is reduced, and the operation of the pulse gas valve 8 can be kept normal.

(1-4) Sixth Embodiment: In the plasma processing apparatus shown in FIG. 1, the uniformity of the plasma generated in the plasma chamber 2 depends on the uniformity of the etching gas introduced into the plasma chamber 2. Dependent. Therefore,
Making the distribution of plasma generated in the plasma chamber 2 uniform,
In order to transport the plasma having a uniform distribution to the processing chamber 1 and make the in-plane processing speed of the sample uniform, it is desirable to increase the uniformity of the etching gas introduced into the plasma chamber 2. The sixth embodiment presents a technique for improving the uniformity of the etching gas.

FIG. 7 shows the etching apparatus shown in FIG.
It is an outline sectional view showing the composition at the time of applying an example.
The storage tank 131 surrounds the plasma chamber, and the pulse gas valve 8
Is introduced into the plasma chamber 2.

FIG. 8 is a partially sectional perspective view showing the structure of the air storage tank 131. The storage tank 131 has a plurality of holes 135 communicating with the plasma chamber 2.

The etching gas introduced from the gas introduction pipe 10 is pulsed from the pulse gas valve 8 to the gas storage tank 13.
1 is supplied. The gas introduced into the gas storage tank 131 is supplied to the plasma chamber in a pulsed manner from a plurality of holes 135 provided in the gas storage tank 131. Since the gas storage tank 131 surrounds the plasma chamber, the etching gas is uniformly supplied from around the plasma chamber.

Accordingly, the uniformity of the etching gas introduced into the plasma chamber 2 can be improved, and the in-plane processing speed of the sample can be made uniform.

(1-5) Seventh Embodiment: In the plasma processing apparatus shown in FIG. 1, the amount of gas introduced from the pulse gas valve 8 into the plasma chamber 2 is the back pressure of the pulse gas valve 8, that is, the gas introduction pipe 10. Varies depending on the internal pressure.

For example, if the back pressure of the pulse gas valve 8 rises for some reason, the amount of gas introduced from the pulse gas valve 8 into the plasma chamber 2 increases, and as a result, the pressure of the plasma chamber 2 becomes higher than a predetermined value. Become. In addition, since the gas is supplied in a pulsed manner, the gas flow rate fluctuates greatly in a short period of time on the order of seconds or less.

In such a case, it is desirable in plasma processing to maintain predetermined set conditions by keeping the back pressure constant and stabilizing the gas supply amount. The seventh embodiment presents a technique in which the back pressure of the pulse gas valve 8 is kept constant and the gas is supplied stably in a pulsed manner.

FIG. 9 shows the etching apparatus shown in FIG.
It is an outline sectional view showing the composition at the time of applying an example.
The gas introduction pipe 141 supplies a gas from a gas cylinder (not shown) (for example, a source gas cylinder 513 in FIG. 48) to the pulse gas valve 8. A pressure detector 142 and a pressure regulator 144 are connected in the middle of the gas introduction pipe 141. The pressure controller 143 operates the pressure regulator 144 based on the signal of the pressure detector 142.

The gas introduced from the gas introduction pipe 141 is
It is supplied to the pulse gas valve 8 and is introduced into the plasma chamber 2 in a pulsed manner. In this case, the pressure in the gas introduction pipe 141 is sequentially detected by the pressure detector 142 and fed back to the pressure control device 143. Pressure control device 143
Controls the pressure regulator 144 so that the pressure in the gas introduction pipe 141 maintains a predetermined value.

Accordingly, even if the back pressure of the pulse gas valve 8 fluctuates, the flow rate of the etching gas introduced into the plasma chamber 2 can be maintained at a predetermined condition, and the pressure of the plasma chamber 2 is maintained at a predetermined condition. You can do it.

(1-6) Eighth Embodiment FIG. 10 is a schematic sectional view showing a configuration in a case where the eighth embodiment is applied to the etching apparatus shown in FIG. According to the eighth embodiment, similarly to the seventh embodiment, the flow rate of the etching gas introduced into the plasma chamber 2 can be maintained at a predetermined condition.

In the eighth embodiment, an air storage chamber 152 is provided between a gas introduction pipe 151 for supplying a gas from a gas cylinder (not shown, for example, a source gas cylinder 513 in FIG. 48) and the pulse gas valve 8.

The gas introduced from the gas introduction pipe 151 is
Once stored in the air storage chamber 152, the pulse gas valve 8
And introduced into the plasma chamber 2 in a pulsed manner. By setting the volume of the air storage chamber 152 to be larger than the gas flow rate, the change in the back pressure of the pulse gas valve 8 due to the flow rate change is suppressed to a small amount.

For example, the volume of the gas storage chamber 152 is set to about 100 times the flow rate of the used gas. For example, since several tens to 100 (cc) of gas flows from the pulse gas valve 8 in a pulsed manner, the volume of the air storage chamber 152 is set to about several liters.

Accordingly, even if the back pressure of the pulse gas valve 8 fluctuates, the flow rate of the etching gas introduced into the plasma chamber 2 can be maintained at a predetermined condition, and the pressure of the plasma chamber 2 is maintained at a predetermined condition. You can do it.

(2) Embodiment relating to plasma excitation technique: (2-1) Ninth Embodiment: In the first embodiment, the plasma generation method is EC.
The case where the R discharge is used has been described. However, depending on the process conditions, for example, when the pressure of the plasma chamber 2 is in the range of 0.1 to 0.01 Torr, the expensive and heavy magnetic field coil 1 is used.
3, the plasma can be generated only by the microwave discharge without using the ECR discharge.

However, when the pressure in the plasma chamber 2 fluctuates as shown in FIG. 2, it is impossible to generate plasma stably only by microwave discharge. In such a case, it is desirable to generate plasma by microwave discharge so that the discharge can be performed stably.

FIG. 11 is a schematic sectional view showing a configuration in the case where the ninth embodiment is applied to the etching apparatus shown in FIG. Instead of the magnetic field coil 13 being provided, the waveguide 1
An iris 211 is provided between 1 and the microwave introduction window 12. The frequency of the microwave is, for example, 2.45 G
Hz.

When microwaves are introduced, since the iris 211 is inserted between the waveguide 11 and the microwave introduction window 12, the microwave is disturbed by the iris 211 and the fundamental mode in the waveguide 11 is changed. Other higher modes occur. A high electric field is generated near the iris 211 by the higher mode. Iris 211 is microwave introduction window 1
2, the high electric field leaks into the plasma chamber 2 and discharge easily occurs. Meanwhile, Iris 211
Has also a role as an impedance element.

Therefore, even when the pressure of the plasma chamber 2 is set to change from 0.1 to 0.01 Torr by the pulse gas valve 8, impedance matching becomes easy and microwave discharge becomes stable.

FIG. 12 is a plan view showing the structure of an iris 211a which is an example of the iris 211 described above. One or both of the height 212 and the width 213 of the iris 211a are made smaller than the dimensions of a normal rectangular waveguide. In FIG. 12, the height 212 is reduced.

FIG. 13 is a plan view showing the structure of an iris 211b which is an example of the iris 211 described above. This figure shows a shape in which a part of a normal circular waveguide is closed by an arc.

(2-2) Tenth Embodiment: When the plasma chamber 2 is made of metal in the ninth embodiment, the distribution of the microwave electromagnetic field formed in the plasma chamber 2 depends on the shape of the plasma chamber 2. Is closely related to
Therefore, the electric field strength at which discharge can be started,
In order to obtain a uniform electric field distribution inside and stably perform microwave discharge, there are cases where the volume and shape of the plasma chamber are restricted.

The tenth embodiment presents a technique which has a high degree of freedom in the volume and shape of a region for generating plasma and is capable of performing stable microwave discharge.

FIG. 14 is a schematic sectional view showing a configuration in the case where the tenth embodiment is applied to the etching apparatus shown in FIG. The difference from the etching apparatus shown in FIG. 1 is that the partition plate 3 is replaced with the partition plate 223, the pulse gas valve 8 is connected to the partition plate 223, and the bell jar 2
21 is installed in the metallic plasma chamber 2.

The partition plate 223 not only has a plurality of holes 4 like the partition plate 3 but also has a gas introduction passage 224 connected to the pulse gas valve 8. The etching gas is supplied into the bell jar 221 through the gas introduction pipe 10, the pulse gas valve 8, and the gas introduction path 224 in this order.

The bell jar 221 transmits microwaves,
Further, it is formed of any of Si, Al, O, N, such as quartz, silicon nitride, and aluminum oxide, which are free from metal contamination, or a compound containing 99% or more of a plurality of elements. For example, it can be formed using quartz glass.

The microwave is transmitted from the waveguide 11 to the plasma chamber 2.
And the bell jar 221 transmits microwaves, so that plasma is generated in a space 222 formed by the partition plate 223 and the bell jar 221.

In the space 222, in order to obtain an electric field intensity at which discharge can be started and a uniform electric field distribution, the plasma chamber 2
Is set to a cavity structure in which microwaves resonate. For example, when the plasma chamber 2 is a cylinder, the TE11 mode of the fundamental wave is excited, and the size of the peak of the excitation wavelength, that is, the size in which at least one portion having high microwave electric field strength is formed in the space 222 is selected. .

On the other hand, the volume shape of the bell jar 221 can be arbitrarily set based on the device configuration and pressure characteristics. The microwave introduced into the plasma chamber 2 from the waveguide 11 generates a strong microwave electric field in the space 222 and easily discharges the gas. As a result, stable plasma can be generated in the space 222 even when the pressure of the plasma chamber is converted by the pulsed introduction of the etching gas.

As described above, in the tenth embodiment, the plasma chamber 2
Since the microwave is resonated in the above, the space 222 for holding the gas is separately provided, so that the volume of the region for generating the plasma and the degree of freedom of the shape can be increased.

(2-3) Eleventh Embodiment: In the eleventh embodiment, similarly to the ninth embodiment, even when the pressure of the plasma chamber 2 fluctuates, the plasma is stably generated only by the microwave discharge. Presenting techniques that can be generated.

FIG. 15 is a schematic sectional view showing a structure in the case where the eleventh embodiment is applied to the etching apparatus shown in FIG. The difference from the etching apparatus shown in FIG. 1 is that the pulse gas valve 8 has the plasma chamber 2 as shown in FIG. 6 in the fifth embodiment, and the magnetic field coil 13 is omitted. And a microwave introducing means 230 is provided instead of the waveguide 11 and the microwave introducing window 12.

The microwave introducing means 230 is a rectangular waveguide 2
31, a tapered waveguide 232 in which the E surface of the rectangular waveguide 231 is tapered, a thin waveguide 233 connected to the tapered waveguide 232, and a thin waveguide 233 installed on the microwave transmitting side. End plate 234 and microwave introduction window 235
And

The terminal plate 234 is movable. A coupling hole is formed on one surface of the thin waveguide 233, and a microwave introduction window 235 is provided to be exposed to the coupling hole. The microwave introduction window 235 is vacuum-sealed with the plasma chamber 2. The microwave introduction window 235 is formed of a plate-shaped dielectric, and can be formed using, for example, a quartz glass plate.

The microwave is guided to the plasma chamber 2 as follows. 2.45G from rectangular waveguide 231
When microwaves of Hz are introduced, the microwaves are applied to the electric field E by the tapered waveguide 232 (the direction is indicated by an arrow in the figure).
Is gradually strengthened, and is coupled into the microwave introduction window 235 from the end of the microwave introduction window 235. Then, during transmission through the microwave introduction window 235, the microwave is gradually coupled into the plasma chamber 2 and forms a strong microwave electric field in the plasma chamber 2.

As a result, discharge easily occurs. Even when the pressure of the plasma chamber is set to change from 0.1 to 0.01 Torr by the pulse gas valve 8, stable plasma is generated only by microwave discharge. Becomes possible.

By setting the direction of the electric field of the microwave to the thickness direction of the microwave introduction window 235, the microwave propagates efficiently from the end face of the microwave introduction window 235. (2-4) Twelfth Embodiment: Electron cyclotron resonance discharge can be performed for the microwave waveguide shown in the eleventh embodiment.

FIG. 16 is a schematic sectional view showing a configuration in the case where the twelfth embodiment is applied to the etching apparatus shown in FIG. The difference from the etching apparatus shown in FIG. 15 is that the magnetic field generating means 236 is provided on the surface of the thin waveguide 233 opposite to the plasma generation chamber 2. As the magnetic field generating means 236, for example, three bar magnets can be used. The magnetic field generating means 236 is installed so that the magnetic field 237 generated by the magnet 236 has a component orthogonal to the electric field direction of the microwave having the electric field component in the thickness direction of the microwave introduction window 235.

Since the electron cyclotron resonance discharge can be performed with a simple configuration using the small bar magnet 236, the discharge is easily generated, and stable plasma can be generated.

(2-5) Thirteenth Embodiment: In the thirteenth embodiment, similarly to the ninth embodiment, even when the pressure of the plasma chamber 2 fluctuates, the plasma is stably generated only by the microwave discharge. Presenting techniques that can be generated.

FIG. 17 is a schematic sectional view showing a configuration in the case where the eleventh embodiment is applied to the etching apparatus shown in FIG. The difference from the etching apparatus shown in FIG. 1 is that the magnetic field coil 13 is omitted, and that the microwave introduction means 240 is provided instead of the waveguide 11 and the microwave introduction window 12. The microwave introducing means 240 is interposed between the pulse gas valve 8 and the plasma chamber 2.

[0246] The microwave introduction means 240 is
And one end thereof is connected to the pulse gas valve 8, and the other end is vacuum-sealed to the plasma chamber 2 by an O-ring 242. Therefore, the etching gas is supplied to the plasma chamber 2 through the gas introduction pipe 10, the pulse gas valve 8, and the transport pipe 241 in this order. The transport tube 241 is formed of a microwave-permeable material, and can be formed using, for example, quartz glass.

The microwave introducing means 240 is a rectangular waveguide 2
43, and the transport tube 241 is a rectangular waveguide 24.
3 and is connected to the plasma chamber 2. In order to prevent the microwave from leaking from the rectangular waveguide 243, a metallic protective tube 2 is provided around the transport tube 241.
44 are provided.

A terminal plate 245 is provided on the microwave transmitting side of the rectangular waveguide 243 and is movable.

The microwave is guided to the plasma chamber 2 as follows. The microwave (for example, the frequency is selected to be 2.45 GHz) introduced from the rectangular waveguide 243 discharges the etching gas in the transport tube 241. At this time, the end plate 245 is moved to
The mountain of microwave standing wave formed in 43
When the position is adjusted to 1, the strong microwave electric field enables reliable discharge.

Therefore, even when the pressure of the plasma chamber is set to change from 0.1 to 0.01 Torr by the pulse gas valve 8, stable plasma is generated only by the microwave discharge.

(2-6) Fourteenth Embodiment: In the first embodiment, the distribution and strength of the magnetic field formed in the plasma chamber 2 by the magnetic field coil 13 are improved so that the magnetic field is transported to the processing chamber 1. The plasma can be made denser and more uniform.

The fourteenth embodiment has a high density and good uniformity.
In addition, a technique for generating a stable electron cyclotron resonance (ECR) plasma, transporting the generated plasma to the processing chamber 1, and performing a processing with high speed and uniformity on the sample 7 is presented.

FIG. 18 is a schematic sectional view showing a structure in the case where the fourteenth embodiment is applied to the etching apparatus shown in FIG. The difference from the etching apparatus shown in FIG. 1 is that the magnetic field coil 13 is replaced with first and second magnetic field coils 251, 252. First and second magnetic field coils 25
Reference numerals 1 and 252 are arranged around the plasma chamber 2, and generate a magnetic field 253 in a direction toward the partition plate 3 by a current from a control power supply (not shown).

A gas is introduced from the pulse gas valve 8 into the plasma chamber 2, a microwave of 2.45 GHz is introduced through the waveguide 11, and a magnetic field of 875 Gauss is generated in the plasma chamber 2 by the magnetic field coils 251 and 252. , E
A CR region 254 is formed where the high density EC
An R plasma is generated.

Since the magnetic field 253 is formed in the direction toward the partition plate 3, the generated ECR plasma is transported from the hole 4 of the partition plate 3 to the processing chamber 1 according to the magnetic field 253. Therefore, the plasma flow is transported not only by the pressure difference between the plasma chamber 2 and the processing chamber 1 but also by the magnetic field 253, so that the plasma can be efficiently guided to the processing chamber 1 and the sample 7.

(2-7) Fifteenth Embodiment: In the fourteenth embodiment, the first and second magnetic field coils 251 and 251 are used.
Adjusting the intensity of the magnetic field 252 to adjust the distribution of the magnetic field in the plasma chamber 2 is more desirable for enhancing the effect of the fourteenth embodiment.

FIG. 19 is a graph showing the distribution of the magnetic field strength according to the fifteenth embodiment. FIG. 19 shows the magnetic field strength at the center of the plasma chamber 2 as a distance z from the microwave introduction window 12.
Is shown. The magnetic field strength is measured by the microwave introduction window 1
Attenuated away from 2 and 8 near the partition plate 3.
75 Gauss. At this position, an ECR region 254 causing electron cyclotron resonance is formed.

Since the ECR region 254 is formed near the partition plate 3, ECR plasma is generated near the partition plate 3, and the generated plasma is efficiently transported from the holes 4 to the processing chamber 1.

In the propagation of microwaves along the magnetic field lines in the plasma, the propagation mode changes at the ECR region 254, so that the ECR region 25 must be transmitted from the stronger magnetic field.
4, the microwave is difficult to propagate. However, by forming the magnetic field distribution as shown in FIG. 19, the microwave can easily propagate to the ECR region 254.

Therefore, even when the ECR region 254 is formed far away from the microwave introduction window 12 and near the partition plate 3, ECR plasma can be stably generated.

(2-8) Sixteenth Embodiment In the fourteenth and fifteenth embodiments, when the ECR region 254 is formed so as to be substantially parallel to the partition plate 3, ECR plasma is also generated substantially in parallel with the partition plate 3. Is done. As a result, ECR plasma having substantially the same characteristics is generated from any position in the surface of the partition plate 3 and transported from the holes 4 to the processing chamber 1 with the same diffusion length.

Therefore, a large number of holes 4 are provided in the partition plate 3,
When transporting large-area plasma to the processing chamber 1, uniform plasma is transported to the processing chamber 1, so that a uniform sample can be processed.

In order to make the radial shape of the ECR region 254 substantially parallel to the partition plate 3 as described above, the magnetic field coil type 2
It can be achieved by adjusting the size, shape, and coil current of 51 and 252.

(2-9) Seventeenth Embodiment: In the fourteenth, fifteenth, and sixteenth embodiments, the pulse gas valve 8 changes the gas pressure of the plasma chamber 2 with time to reduce the microwave power. Is
ECR discharge may not be stably maintained.

On the other hand, the ECR region 254 is
When it is temporally changed in a direction away from the partition plate 3 within
Accordingly, the ECR plasma region also varies with time.

Therefore, when the ECR plasma region is changed in accordance with the gas pressure fluctuation, the coupling between the microwave generating the ECR discharge and the magnetic field is assured, and the stable ECR plasma is generated.
A CR plasma is generated.

(2-10) Eighteenth Embodiment: The eighteenth embodiment provides a technique for solving the second problem as well. FIG. 20 is a schematic sectional view showing the configuration of the dry etching apparatus according to the eighteenth embodiment. The fifth embodiment has the same configuration as that of the etching apparatus shown in FIG. 6, but the waveguide 11, the microwave introduction window 12, and the magnetic field coil 13 are omitted, and a dielectric material is provided in the plasma chamber 2. Membrane 264
The electrode 263 covered with is provided. Dielectric film 26
4 can be formed using, for example, quartz glass.

[0268] RF power is applied from the RF power supply 261 to the electrode 263 in the plasma generation chamber via the transmission path 262. On the other hand, the etching gas is supplied to the plasma chamber 2 from the gas introduction pipe 10 via the pulse gas valve 8 operated by the driving device 9.

The frequency of the applied RF power is f, and the electrode 2
Assuming that the effective area of S 63 is S and the thickness and permittivity of the dielectric film 264 are d and ε, respectively, the impedance of the dielectric film 264 is Z = 1 / (2πfC) = d / (2πfεS)
Becomes

Therefore, by adjusting the frequency f, the thickness d, and the dielectric constant ε, the impedance of the dielectric film 264 can be reduced, and even if the electrode 263 is covered with the dielectric 264, the electrode 263 and the partition plate 3 RF power can be applied in between.

As an example, the frequency f is set to 1 MHZ,
3 has an effective area S of 706 cm 2 (corresponding to an electrode having a diameter of 30 cm) and the dielectric film 264 is made of quartz glass (relative dielectric constant of 3.
In the case of 8), if the thickness of the dielectric film 264 is set to 1.4 mm or less, the impedance can be set to 100Ω or less.

Therefore, RF power is efficiently applied between the electrode 263 and the partition plate 3, and a discharge occurs between them. In this case, since the electrode 263 is covered with the dielectric 264, the metal part of the electrode is not exposed, and sputtering by plasma particles does not occur.

For this reason, according to the eighteenth embodiment, the plasma transported from the hole 4 of the partition plate 3 to the processing chamber 1 can be kept clean. Therefore, the sample 7 can be processed without metal contamination.

(2-11) Nineteenth Embodiment: The nineteenth embodiment also provides a technique for solving the second problem. FIG. 21 is a schematic sectional view showing the configuration of the dry etching apparatus according to the nineteenth embodiment. The first embodiment has the same configuration as that of the etching apparatus shown in FIG. 1, but the waveguide 11, the microwave introduction window 12, and the magnetic field coil 13 are omitted, and the RF power application means 270 is provided. ing. The side wall 271 of the plasma chamber 2 is formed of a dielectric such as quartz glass.

The RF power applying means 270 is provided for the RF coil 27.
2 is provided with a plasma RF power supply 277 for applying RF power. The RF coil 272 is arranged around the side wall 271. The RF coil 272 is formed of a conductor 273 and a first insulator 274 that covers the conductor. RF
The periphery of the coil 272 is further provided with a conductive material 275 of a metal thin film.
, And a second insulator 276 is provided therearound.

When an etching gas is introduced into the plasma chamber 2 from the pulse gas valve 8 and RF power is applied to the RF coil 272, plasma is generated in the plasma chamber 2. In this case, when the thickness of the conductive material 275 is set to be smaller than the skin thickness D represented by the following equation, the plasma in the plasma chamber 2 and the RF coil 272 can be coupled with each other in terms of RF, but the DC is not conductive. It cannot be combined because it is shielded by the substance 275. Here, the skin thickness is expressed as D = (2πfμσ) −1/2, where f is the frequency of the RF power, μ is the magnetic permeability in vacuum, and σ is the conductivity of the metal thin film.

[0277]

In this case, discharge starts from the surface of the side wall 271 of the plasma chamber 2 by induction coupling, and is coupled with the generated plasma. On the other hand, since the RF coil 272 is shielded, a DC electric field caused by a DC potential difference generated at both ends of the RF coil 272 is suppressed. As a result, the sputtering of the wall of the plasma chamber 2 is suppressed. Moreover, since no electrodes are present in the plasma chamber, a clean plasma free of metal contamination is generated.

For this reason, according to the nineteenth embodiment, the plasma transported from the hole 4 of the partition plate 3 to the processing chamber 1 can be kept clean. Therefore, the sample 7 can be processed without metal contamination.

(2-12) Twentieth Embodiment: The twentieth embodiment also provides a technique for solving the second problem. FIG. 22 is a schematic sectional view showing the configuration of the dry etching apparatus according to the twentieth embodiment. The eighteenth embodiment has the same configuration as the etching apparatus shown in FIG. 20 except that an RF power source 261 for applying RF power and a transmission line 26
2. The electrodes 263 and the like are omitted. Instead, a high-pressure mercury lamp as the light source 282 and a concave mirror 283 for reflecting the light from the light source 282 and guiding the light into the plasma chamber are respectively provided above the plasma chamber 2. A quartz glass 284 is arranged on the wall surface of the plasma chamber 2 so that the metal is not exposed. Further, a window 281 for light transmission is provided in an upper part of the plasma chamber 2.

An etching gas is supplied from a gas introduction pipe 10 through a pulse gas valve 8 operated by a driving device 9.
It is supplied to the plasma generation chamber 2. At this time, light from the light source 282 is irradiated into the plasma chamber 2 via the concave mirror 283 and the window 281. The light excites, dissociates, or ionizes the etching gas to generate plasma.

In the twentieth embodiment, an electric field contributing to sputtering is not generated because plasma is generated by light. In addition, since there is no exposed metal part in the plasma chamber 2,
Clean plasma is transported to the processing chamber 1. Therefore, the sample can be processed without metal contamination.

(2-13) Twenty-First Embodiment In the twentieth embodiment, a case has been described in which a high-pressure mercury lamp is used as the light source 282, but a laser light source may be used.

FIG. 23 is a schematic sectional view showing the structure of the dry etching apparatus according to the twenty-first embodiment. The twentieth embodiment has a configuration similar to that of the etching apparatus shown in FIG. 22 except that the light source 282 and the concave mirror 283 are replaced with a laser light source 285 and a convex mirror 286, respectively.

[0285] Laser light from the laser light source 285 is introduced into the plasma chamber through the light transmission window 281. In addition, by expanding the laser light with the convex mirror 286, plasma can be generated in a large area.

The same effect can be obtained by using an SR light source or an ultraviolet light source as the light source.

(2-14) Twenty-second Embodiment: The twenty-second embodiment also provides a technique for solving the second problem. FIG. 24 is a schematic sectional view showing the configuration of the dry etching apparatus according to the twenty-second embodiment. The twentieth embodiment has the same configuration as that of the etching apparatus shown in FIG. 22, but does not include the window 281, the light source 282, and the concave mirror 283. Instead, a heating means 290 is provided.

The heating means 290 includes a heating vessel 291, a heater 292, and a temperature controller 293. The etching gas is supplied from the gas introduction pipe 10 to the plasma chamber 2 from the pulse gas valve 8 via the heating vessel 291. A heater 292 is installed around the heating vessel 291 as a heat source for heating the gas, and the temperature is controlled by a temperature controller 293.

When the etching gas is introduced into the plasma chamber 2 from the pulse gas valve 8, the heating vessel 291 is heated by the partition wall heater 292, and the etching gas passing therethrough is thermally excited or dissociated or ionized. Then, plasma is generated in the plasma chamber 2. The generated plasma is transported from the hole 4 of the partition plate 3 to the processing chamber 1 and etches the sample.

In the twenty-second embodiment, since plasma is generated by heat, no electric field contributing to sputtering is generated. In addition, since there is no exposed metal part in the plasma chamber 2,
Clean plasma is transported to the processing chamber 1.

[0291] Even if the heater 292 is not connected to the periphery of the heating vessel 291 to heat the etching gas, the same effect can be obtained by directly heating the plasma instead of the heating vessel 291.

Further, instead of connecting the heater 292 to the periphery of the heating container 291, the heater 291 may be embedded in the heating container 291, or a current may be directly supplied to the heating container 291 or heating may be performed by infrared light. Effects can be obtained.

(3) Embodiment Regarding Plasma Chamber 2: (3-1) Twenty-third Embodiment: The twenty-third embodiment also provides a technique for solving the second problem. FIG. 25 is a schematic sectional view showing the configuration of the dry etching apparatus according to the twenty-third embodiment. The twenty-second embodiment has a configuration similar to that of the etching apparatus shown in FIG. 24, but does not include the heating means 290. Instead, a waveguide 11 and a microwave introduction window 12 are provided. The quartz glass 284 is provided on the wall of the plasma chamber 2.
, An inner wall 311 is provided. Inner wall 311
Is made of, for example, quartz.

A hole 312 for introducing gas is provided in the inner wall 311.
Holes 313 for introducing microwaves are provided, and are provided at positions corresponding to the injection ports of the pulse gas valve 8 and positions corresponding to the microwave introduction windows 12, respectively.

With such a structure, even if plasma is generated in the plasma chamber 2 using microwaves, since metal parts are not exposed in the plasma chamber 2, sputtering is generated by plasma particles. No metallic substance is mixed. The plasma generated in this way is transported from the hole 4 of the partition plate 3 to the processing chamber 1 and etches the sample 7 without metal contamination.

The inner wall 311 is made of quartz, silicon nitride,
Si, such as aluminum oxide, Al, O, one had <br/> either the of N, or a plurality of elements of may be formed by compounds containing more than 99%.

(4) Embodiment Regarding Partition Wall 3 (4-1) Twenty-fourth Embodiment: In order to increase the area of plasma transported to the processing chamber 1, the diameter of the hole 4 may be increased. When the diameter of the hole 4 is increased, the pressure difference between the plasma chamber 2 and the processing chamber 1 cannot be maintained.

Therefore, the twenty-fourth embodiment presents an improved technique of the partition plate 3. FIG. 26 is a schematic sectional view showing a configuration of a partition plate 421 that can be used for the partition plate 3 of FIG. The partition plate 421 has a plurality of holes 422 having the same diameter.

The plasma generated in the plasma chamber 2 is transported to the processing chamber 1 from the plurality of holes 422 of the partition plate 421 having the same diameter, and etches the sample 7. Therefore, even large-diameter samples can be processed uniformly. In this case, a plurality of holes 422
Is set so that the pressures in the plasma chamber 2 and the processing chamber 1 satisfy predetermined conditions.

(4-2) Twenty-Fifth Embodiment The twenty-fifth embodiment also shows an improved technique of the partition plate 3. FIG. 27 is a schematic sectional view showing the configuration of a partition plate 423 that can be used for the partition plate 3 of FIG. Partition plate 423
Has a plurality of holes 424 having different diameters.

A partition plate 423 having holes 424 of different diameters
In the above, even if non-uniform plasma is generated in the plasma chamber 2, the plasma transported to the processing chamber 1 is
Therefore, a large-diameter sample can be uniformly processed.

For example, if the plasma density generated in the plasma chamber 2 is uneven in the radial direction, the plasma density is high near the center, and the plasma density is low near the periphery,
The plasma can be transported to the processing chamber 1 uniformly by increasing the diameter of the partition 24 near the periphery of the partition plate 423.

Therefore, according to the twenty-fifth embodiment, even a large-diameter sample can be uniformly processed.

(4-3) Twenty-Sixth Embodiment In order to prevent deformation and destruction of the partition plate 3 due to a pressure difference between the plasma chamber 2 and the processing chamber 1, it is desirable to increase the thickness of the partition plate 3. On the other hand, when the diameter of the hole 4 is substantially equal to or smaller than the thickness of the partition plate 3, the conductance increases, and a predetermined pressure difference cannot be obtained.

FIG. 28 is a schematic sectional view showing the structure of a partition plate 431 that can be used for the partition plate 3 of FIG. The partition plate 431 is provided between the plasma chamber 2 and the processing chamber 1,
It has a tapered hole 432.

The strength against mechanical stress due to the pressure difference between the plasma chamber 2 and the processing chamber 1 can be maintained by the thickness of the partition plate 431 other than the holes. Further, since the shape of the hole 432 is tapered, the conductance can be reduced as compared with the cylindrical hole.

Therefore, according to the twenty-sixth embodiment, the partition plate 43
1, the pressure difference between the plasma chamber 2 and the processing chamber 1 can be maintained at a predetermined pressure difference.

(4-4) Twenty-seventh Embodiment In the twenty-sixth embodiment, the shape of the hole 432 is tapered. However, the hole 432 is formed of a small-thickness hole like a countersunk hole 433 shown in FIG. Even so, the same effect is achieved.

(4-5) Twenty-eighth Embodiment: The twenty-eighth embodiment solves the second problem by improving the material of the partition plate.

FIG. 30 is a schematic sectional view showing the structure of a partition plate 441 that can be used for the partition plate 3 of FIG. The partition plate 441 is made of quartz and has a plasma chamber 2 and a processing chamber 1.
And a hole 442.

Since the partition plate 441 is made of quartz that does not contain heavy metals, even if the partition plate 441 is sputtered by plasma, particles containing heavy metals are not emitted into the plasma. Therefore, heavy metal does not adhere to the sample, so that heavy metal contamination can be prevented.

(4-6) Twenty-ninth Embodiment In the twenty-eighth embodiment, the partition plate 441 is entirely made of quartz glass. However, quartz is formed on the surface of the metal partition plate by a method such as thermal spraying. It may be configured to cover.

(4-7) 30th Embodiment: In order to obtain a desired processed shape corresponding to various samples,
It is desirable to control the energy of charged particles incident on the sample and the ratio of ions to neutral active particles. The thirtieth embodiment presents a technique for controlling the energy of charged particles incident on a sample and the ratio of ions to neutral active particles to obtain a desired processed shape corresponding to various samples.

FIG. 31 is a schematic sectional view showing the structure of the dry etching apparatus according to the thirtieth embodiment. In the first embodiment, the configuration is the same as that of the etching apparatus shown in FIG. 1, but the partition plate 3 is replaced with an insulating partition plate 450.

The partition plate 450 has a hole 451, and is electrically floating from the plasma chamber 2 and the processing chamber 1. The DC power supply 452 applies a DC voltage between the plasma chamber 2 and the partition plate 450.

Since an electrostatic voltage is applied to the partition plate 450,
Charged particles passing through the holes 451 of the partition plate 450 are affected by the electrostatic voltage. Therefore, only charged particles having a predetermined energy can pass through the hole 451,
Other charged particles cannot enter the processing chamber 1.

Therefore, according to the thirtieth embodiment, the energy of the charged particles incident on the sample 7 can be controlled, and the ratio of the incident ions to the neutral active species can be controlled. A desired processing shape is obtained.

(4-8) 31st Embodiment FIG. 32 is a schematic sectional view showing the structure of a dry etching apparatus according to a 31st embodiment. In the thirtieth embodiment, the DC power supply 452 applies DC power between the plasma chamber 2 and the partition plate 450. However, in the thirty-first embodiment, the RF power supply 453 applies an RF power between the plasma chamber 2 and the partition plate 450. Apply voltage.

[0319] Since an RF voltage is applied to the partition plate 450, charged particles having predetermined energy can be accelerated by RF. This is RF in research such as nuclear fusion
Also known as plugging. Charged particles that try to pass through the hole 451 of the partition plate 450 are affected by RF, and only charged particles having a predetermined energy are
, And other charged particles cannot enter the processing chamber 1.

Therefore, according to the thirty-first embodiment, the energy of the charged particles incident on the sample 7 can be controlled, and the ratio of the incident ions to the neutral active species can be controlled. A desired processing shape is obtained.

(5) Embodiment relating to the processing chamber 1: (5-1) 32nd embodiment: The density of the plasma transported to the processing chamber 1 by the pressure difference between the plasma chamber 2 and the processing chamber 1 depends on the discharge conditions and the partition. It depends on the conductance of the plate 3. The thirty-second embodiment shows a technique for increasing the plasma density in the processing chamber 1.

FIG. 33 is a schematic sectional view showing the structure of the dry etching apparatus according to the 32nd embodiment. The first embodiment has the same configuration as that of the etching apparatus shown in FIG.
1 is provided.

[0332] The magnetic field coil 13
When a magnetic field of 75 Gauss is formed, an electron cyclotron resonance plasma is generated. The generated plasma is transported from the hole 4 of the partition plate 3 to the processing chamber 1 and etches the sample. At this time, the plasma in the plasma chamber 2 is transported not only along the pressure difference between the plasma chamber 2 and the processing chamber 1 but also along the lines of magnetic force generated by the processing chamber magnetic field coil 511.
The plasma density in the processing chamber 1 can be increased.

The density of the plasma transported into the processing chamber 1 can be varied by changing the intensity of the magnetic field generated by the processing chamber magnetic field coil 511.

(5-2) Thirty-third Embodiment In the plasma transported to the processing chamber 1 due to the pressure difference between the plasma chamber 2 and the processing chamber 1, the charged particles may disappear on the walls of the processing chamber 1, Its density may decrease. Therefore, it is desirable to increase the plasma density in order to obtain a sufficient plasma density for processing the sample 7.

FIG. 34 is a schematic sectional view showing the structure of the dry etching apparatus according to the 33rd embodiment. Although the first embodiment has the same configuration as the etching apparatus shown in FIG. 1, a plurality of permanent magnets 521 are arranged on the outer wall of the processing chamber 1.

[0327] The plasma transported to the processing chamber 1 is generated by a plurality of permanent magnets 521 provided on the outer wall of the processing chamber 1.
It does not disappear on the wall of the processing chamber 1. Therefore, according to the thirty-third embodiment, the sample 7 can be efficiently etched.

(6) Embodiment Regarding Stage 6 (6-1) 34th Embodiment: In the plasma processing apparatus according to the first embodiment shown in FIG. 1, various amounts of plasma generated in the plasma chamber 2 are as follows. When the shape, size, exhaust capacity, etc. of the plasma processing apparatus are determined, it is almost determined by the pulse conditions of the pulse gas valve 8. On the other hand, when it is desired to change various plasma amounts in accordance with the processing conditions of the sample 7, it is desirable to change the plasma various amounts over a wide range. The thirty-fourth embodiment presents a technique that enables control of a wide range of plasma quantities.

FIG. 35 is a schematic sectional view showing the structure of the dry etching apparatus according to the thirty-fourth embodiment. In the first embodiment, the configuration is the same as that of the etching apparatus shown in FIG. 1, but the stage 6 is replaced by a stage 611.

The sample 7 is mounted on the stage 611, and at least the sample mounting surface is electrically insulated from the processing chamber 1. A DC power supply 61 is connected between the sample mounting surface of the stage 611 and the processing chamber 1 via a power supply line 613.
2, a DC voltage is applied. For this reason, a DC voltage is applied to the sample 7 to the processing chamber 1.

[0331] Electron cyclotron resonance plasma is generated in the plasma chamber 2, and when the generated plasma is transported to the processing chamber 1, when a DC voltage is applied from the DC power supply 612 to the stage 611, the plasma corresponds to the magnitude of the voltage. Thus, various amounts of plasma incident on the sample 7 can be controlled. Therefore, according to the thirty-fourth embodiment, etching corresponding to the processing conditions of the sample 7 can be performed.

(6-2) 35th Embodiment: FIG. 36 is a schematic sectional view showing the structure of a dry etching apparatus according to the 35th embodiment. In the thirty-fourth embodiment, the DC power supply 612 applies a DC voltage to the sample 7;
In the embodiment, the RF power supply 614 applies an RF voltage to the sample 7.

When RF is applied to the sample 7 from the RF power source 614, the plasma transported from the plasma chamber 2 can be transported to the sample 7 without spreading to the entire processing chamber 1 and efficiently incident on the sample. Becomes possible.

In this case, when the stage 611 is brought close to the partition plate 3 and the distance is appropriately set, a parallel plate-like uniform RF electric field is formed between the stage 611 and the partition plate 3 in the radial direction of the stage 611. . Therefore, according to the thirty-fifth embodiment, processing with good in-plane uniformity of the sample 7 can be performed.

(6-3) 36th Embodiment In the 34th embodiment, the magnitude of the voltage applied from the DC power supply 612 to the sample 7 can be changed with time.

FIG. 37 is a graph for explaining the 36th embodiment. The upper part of the graph shows the temporal change of the DC voltage applied between the sample 7 and the processing chamber 1, and the lower part of the graph shows the temporal change of the pressure of the processing chamber 1.

The DC voltage shows a case where a positive voltage of 0 V is applied in a pulsed manner. When the positive DC voltage is turned on when the pressure in the processing chamber 1 is high and the DC voltage is turned off when the pressure in the processing chamber 1 is low, ions in the plasma transported from the plasma chamber 2 are generated by the positive electric field. Is suppressed. As a result, the sample 7 is irradiated with plasma having a large radical / ion ratio.

Since the plasma generated in the thirty-sixth embodiment has a large amount of radicals, it is effective when the surface of the sample 7 having irregularities is isotropically etched.

(6-4) 37th Embodiment Contrary to the 36th embodiment, the magnitude of the voltage applied to the sample 7 can be increased when the pressure in the processing chamber 1 is low.

FIG. 38 is a graph for explaining the 37th embodiment. The upper part of the graph shows the temporal change of the DC voltage applied between the sample 7 and the processing chamber 1, and the lower part of the graph shows the temporal change of the pressure of the processing chamber 1.

The DC voltage shows a case where a negative voltage of 0 V is applied in a pulsed manner. When a negative DC voltage is turned on at the time when the pressure in the processing chamber 1 is low, ions in the plasma transported from the plasma chamber 2 are accelerated by the negative electric field. As a result, the sample 7 is irradiated with a plasma having a small radical / ion ratio.

Since the plasma generated in the thirty-seventh embodiment has a large amount of ions, it is effective when the surface of the sample 7 having irregularities is etched in the vertical direction.

(6-5) 38th Embodiment: In the 35th embodiment, the magnitude of the RF power applied to the sample 7 from the RF power supply 614 can be changed with time. Generally, when RF power is applied to the sample 7, a negative bias voltage is applied to the sample 7 in a DC manner corresponding to the RF power, so that the amount of plasma ions incident on the sample 7 can be controlled.

FIG. 39 is a graph for explaining the 38th embodiment. The upper part of the graph shows the temporal change of the RF power applied between the sample 7 and the processing chamber 1, and the lower part of the graph shows the temporal change of the pressure of the processing chamber 1.

If the timing of applying the RF power is selected at any time from when the pressure change in the sample chamber 1 is high to when it is low, the radical / ion ratio can be largely controlled by the timing. Therefore, according to the thirty-eighth embodiment, various plasma amounts can be controlled in accordance with the processing conditions of the sample 7.

(7) Embodiment relating to the exhaust method: (7-1) 39th embodiment: In the plasma processing apparatus shown in FIG. 1, the pressure in the plasma chamber 2 and the pressure in the processing chamber 1 are in a correspondence relationship. If the exhaust capacity is constant, it is determined by the diameter of the hole 4 of the partition plate 3. On the other hand, even when it is desired to greatly change the pressure in the processing chamber 1 to control the processing conditions of the sample 7, it is desirable to maintain the pressure in the plasma chamber 2 at a predetermined value in order to generate plasma. The thirty-ninth embodiment presents a technique for increasing the degree of freedom in controlling the pressure in the processing chamber 1 without greatly changing the pressure in the plasma chamber 2.

FIG. 40 is a schematic sectional view showing the structure of the dry etching apparatus according to the thirty-ninth embodiment. The first embodiment has the same configuration as the etching apparatus shown in FIG. 1, but is provided with a bypass 711 that connects the processing chamber 1 and the plasma chamber 2.

The etching gas introduced from the pulse gas valve 8 into the plasma chamber 2 is exhausted from the exhaust port 5 through the hole 4 of the partition plate 3 and the bypass 7111. At this time, a microwave of 2.45 GHz is introduced into the plasma chamber 2,
When a magnetic field of 875 Gauss is formed in the plasma chamber 2 by the magnetic field coil 13, an electron cyclotron resonance plasma is generated.

Of the generated plasma, the plasma transported from the hole 4 of the partition plate 3 to the processing chamber 1 etches the sample, and the plasma transported to the processing chamber 1 via the bypass 711 collides with the bypass pipe wall. Disappears. Therefore, only the plasma transported from the hole 4 of the partition plate 3 to the processing chamber 1 contributes to the etching.

Therefore, according to the thirty-ninth embodiment, the partition plate 3
The pressure region between the plasma chamber 2 and the processing chamber 1 can be expanded by the bypass 711 without replacing the gas chamber or increasing the exhaust capacity.

(7-2) Forty Embodiment: In the thirty-ninth embodiment, the pressure in the processing chamber 1 and the plasma chamber 2
It is desirable to make the conductance of the bypass 711 variable in order to control the pressure.

FIG. 41 is a schematic sectional view showing the structure of the dry etching apparatus according to the fortieth embodiment. The thirty-ninth embodiment has the same configuration as the etching apparatus shown in FIG. 40, except that a conductance valve 713 is added to the bypass 711.

Therefore, according to the fortieth embodiment, the pressure in the plasma chamber 2 and the pressure in the processing chamber 1 are reduced by the conductance valve 713.
Can be set in a wider range.

(7-3) Forty-First Embodiment FIG. 42 is a schematic sectional view showing the structure of a dry etching apparatus according to a forty-first embodiment. The first embodiment has the same configuration as that of the etching apparatus shown in FIG. 1 except that an exhaust port 714 for exhausting the plasma chamber 2 is added.

The exhaust port 714 evacuates the plasma chamber 2 by a vacuum pump (not shown). On the other hand, the exhaust port 5 evacuates the processing chamber 1 as described in the first embodiment.

Therefore, according to the forty-first embodiment, since the plasma chamber 2 and the processing chamber 1 can be evacuated independently, the pressure can be set over a wider range and the process margin can be increased.

(8) Embodiment relating to operating conditions: (8-1) Forty-second embodiment: In the plasma processing apparatus according to the first embodiment shown in FIG. When the shape, size, exhaust capacity, etc. of the plasma processing apparatus are determined, it is almost determined by the pulse conditions of the pulse gas valve 8. On the other hand, when it is desired to change various plasma amounts in accordance with the processing conditions of the sample 7, it is desirable to change the plasma various amounts over a wide range. The forty-second embodiment presents a technique that enables control of a wide range of plasma quantities.

FIG. 43 is a schematic sectional view showing the structure of the dry etching apparatus according to the forty-second embodiment. The first embodiment has the same configuration as the etching apparatus shown in FIG. 1 except that a pulsed microwave generator 801 connected to the waveguide 11 and a pulse controller 802 for controlling the same are additionally provided. I have. Then, the temporal change of the energy of the microwave as the excitation source becomes pulse-like.

An etching gas is introduced from the pulse gas valve 8 into the plasma chamber 2, and is introduced into the plasma chamber 2 through the waveguide 11 and the microwave introduction window 12.
A pulsed microwave is introduced from 1. Then, when a magnetic field of 875 Gauss is formed in the plasma chamber 2 by the magnetic field coil 13, electron cyclotron resonance plasma is generated.

Here, when the conditions of the generated pulsed microwaves, that is, the power value, width, and cycle of the pulsed microwaves are varied by the pulse controller 802, the amount of generated plasma changes. This is because when pulse discharge is performed, plasma that exists for a certain period of time even after the pulse disappears, that is, what is generally called afterglow plasma is generated.

Since the after-glow plasma changes greatly depending on the pulse conditions, according to the forty-second embodiment, various amounts of plasma generated in the plasma chamber can be controlled over a wide range.

(8-2) Forty-third Embodiment: In the forty-second embodiment, when the timing of introducing the pulsed microwave is changed in accordance with the change in the pressure of the plasma chamber 2, various plasmas generated in the plasma chamber are obtained. The amount can be controlled in more detail.

FIG. 44 is a graph for explaining the operation of the forty-third embodiment. The upper part of the graph shows the temporal change of the microwave power supplied to the plasma chamber 2, and the lower part of the graph shows the processing chamber 1
Over time, respectively, are shown.

Generally, as the gas pressure increases, the amount of radicals in the generated plasma increases. Accordingly, as shown by the solid line, when the pulsed microwave is applied at a time when the pressure in the plasma chamber 2 is high, plasma having a large ratio between the radical amount and the ion amount is generated. The generated plasma is transported from the hole 4 of the partition plate 3 to the processing chamber 1 and etches the sample 7.

Since the plasma generated in the forty-third embodiment has a large amount of radicals, it is effective for isotropically etching the surface of the sample 7 having irregularities.

(8-3) Forty-fourth Embodiment: Regarding the forty-second embodiment, contrary to the forty-third embodiment, FIG.
As shown by a dotted line in FIG. 5, when a pulsed microwave is applied at a time when the pressure of the plasma chamber 2 is low, plasma having a large ratio between the amount of radicals and the amount of ions is generated. The generated plasma is transported from the hole 4 of the partition plate 3 to the processing chamber 1 and etches the sample 7.

Since the plasma generated in the forty-fourth embodiment has a small amount of radicals, it is effective when the surface of the sample 7 having irregularities is etched in the vertical direction.

In the forty-second to forty-fourth embodiments, the case where a microwave is used as an excitation source has been described.
The same effect can be obtained even if energy such as F power, DC power, or laser light is introduced into the plasma chamber 2 in a pulsed manner.

(8-4) Forty-Fifth Embodiment: The forty-fifth embodiment also presents a technique capable of controlling a wide range of plasma quantities. FIG. 45 is a schematic sectional view showing the configuration of the dry etching apparatus according to the forty-fifth embodiment. The first embodiment has the same configuration as that of the etching apparatus shown in FIG. 1 except that first and second pulse gas valves 831 and 832 are provided instead of the single pulse gas valve 8. Also supplies gas to the plasma chamber 2. The first and second pulse gas valves 831 and 832 are controlled and operated by first and second driving devices 833 and 834, respectively.

An etching gas is introduced into the plasma chamber 2 from the first and second pulse gas valves 831 and 832, and is exhausted from the hole 4 of the partition plate 3, the processing chamber 1, and the exhaust port 5. As in the first embodiment, a microwave of 2.45 GHz is introduced into the plasma chamber 2 and a magnetic field of 875 Gauss is formed in the plasma chamber 2 to generate electron cyclotron resonance plasma. However, since two pulse gas valves are provided, different types of gases can be introduced from each under different conditions.

For example, the operation of the forty-fifth embodiment will be described for the case where the sample 7 is made of aluminum and is etched in a direction perpendicular to the surface of the sample 7. When etching is performed by plasma generated by introducing only chlorine gas as an etching gas, reactivity is high, and etching is also performed in a direction parallel to the surface of the sample 7. Therefore, a desired etching shape cannot be obtained.

However, when chlorine gas was used as an etching gas in the first pulse gas valve 831 and BCI ₃ gas was used as a deposition gas in the second pulse gas valve 832 to introduce the plasma into the plasma chamber 2, plasma was generated.
The etching in the direction parallel to the surface is suppressed, and a vertical processed shape can be obtained.

Note that the first pulse gas valve 831 and
The operation timing of the second pulse gas valve 832 may be performed simultaneously or alternately.

Therefore, according to the forty-fifth embodiment, it is possible to control a wide range of plasma amounts. In particular, an etching gas is introduced from the first pulse gas valve 831, and a deposition gas is introduced from the second pulse gas valve 832. By doing so, it is possible to control the etching direction.

(8-5) Forty-sixth Embodiment: In the forty-fifth embodiment, the first pulse gas valve 831
From the second pulse gas valve 832 using a rare gas.
To generate plasma.

In this case, the temperature of the plasma is reduced as compared with the case where the plasma is generated only with the chlorine gas, so that the etching can be performed more perpendicularly to the surface of the sample 7.

(8-6) Forty-Seventh Embodiment The forty-seventh embodiment presents a technique for solving the second problem as well. FIG. 46 is a schematic sectional view showing the configuration of the dry etching apparatus according to the 47th embodiment. The first embodiment has the same configuration as the etching apparatus shown in FIG. 1 except that a single pulse gas valve 8 is used instead of the first and second etching apparatuses.
Pulse gas valves 841 and 842 are provided.

The first pulse gas valve 841 is connected to the plasma chamber 2 and the second pulse gas valve 842 is connected to the processing chamber 1. The first and second pulse gas valves 841 and 842 operate by being controlled by first and second driving devices 843 and 844, respectively. Then, the first pulse gas valve 841 supplies gas to the plasma chamber 2, while the second pulse gas valve 842 supplies gas to the processing chamber 1.

For example, argon is introduced into the plasma chamber 2 from the first pulse gas valve 841 as a rare gas.
An etching gas is supplied from the second pulse gas valve 842.
Chlorine is introduced into the processing chamber 1 as scan.

Therefore, the plasma generated in the plasma chamber 2 is an argon plasma which is generated from argon gas and is not reactive. Therefore, the wall surface of the plasma chamber 2 is not etched.

The argon plasma is transported from the plasma chamber 2 to the processing chamber 1. On the other hand, since chlorine gas is introduced into the processing chamber 1, it is turned into plasma by the argon plasma transported from the plasma chamber 2 to generate reactive plasma. This reactive plasma etches the sample 7.

The reactive plasma in the processing chamber 1 is mainly generated only in a region where the plasma transported from the plasma chamber 2 forms in the processing chamber. Therefore, the diffusion to the wall surface of the processing chamber 1 and the etching of the wall surface are less likely.

As described above, according to the forty-sixth embodiment, the etching product hardly adheres to the sample 7 as foreign matter.

(8-7) Forty-eighth Embodiment The first pulse gas valve 841 connected to the plasma chamber 2 and the second pulse gas valve 841 connected to the processing chamber 1 in the forty-seventh embodiment.
The operation timing of the pulse gas valve 842 can be controlled in accordance with the pressure of the processing chamber 1.

FIG. 47 is a graph showing the operation of the forty-eighth embodiment. The upper part of the graph shows the temporal change of the operation of the second pulse gas valve 842, and the lower part of the graph shows the temporal change of the pressure of the processing chamber 1.

If the timing at which the second pulse gas valve 842 is turned on is adjusted to the time when the plasma is transported from the plasma chamber 2 to the processing chamber 1, that is, the time when the pressure in the processing chamber 1 is high, plasma can be generated efficiently.

Therefore, according to the forty-eighth embodiment, the sample 7 can be processed efficiently.

[0388]

In the plasma processing apparatus according to the first aspect of the present invention, since the gas is introduced into the plasma chamber in a pulsed manner, a large area can be maintained while maintaining a predetermined pressure difference between the plasma chamber and the processing chamber. Can be transported to the processing chamber.

In the plasma processing apparatus according to claim 2 of the present invention, a gas with less foreign matter such as impurities can be supplied, so that foreign matter is prevented from adhering to the sample.

In the plasma processing apparatus according to claim 3 of the present invention, the supply of gas can be substantially stopped by leaving a slight gap, but the generation of impurities due to the collision between the two is avoided. Is suppressed.

In the plasma processing apparatus according to claim 4 of the present invention, the needle reciprocates to turn on / off the gas supply.

In the plasma processing apparatus according to claim 5 of the present invention, the electromagnetic induction means can reliably supply the pulse gas without being affected by the magnetic field.

In the plasma processing apparatus according to claim 6 of the present invention, the supply of the pulse gas can be ensured without the second magnetic field being affected by the first magnetic field.

In the plasma processing apparatus according to claim 7 of the present invention, since gas is introduced from around the plasma chamber, uniform plasma is generated in the plasma chamber, and uniform in-plane processing of the sample becomes possible. .

In the plasma processing apparatus according to the eighth and ninth aspects of the present invention, since the back pressure of the gas supply means is controlled to be constant, stable supply of the pulse gas to the plasma chamber is performed and stable. The generated plasma can be generated.

In the plasma processing apparatus according to the tenth aspect of the present invention, the gas is temporarily stored in the gas storage chamber, so that the back pressure of the gas supply means is constant, and the stable supply of the pulse gas to the plasma chamber is performed. Will be

In the plasma processing apparatus according to the eleventh aspect of the present invention, the capacity of the air storage chamber is sufficiently large, so that the back pressure is effectively stabilized.

In the plasma processing apparatus according to the twelfth aspect of the present invention, since the electric field strength of the microwave in the plasma chamber is increased, stable plasma can be generated only by the microwave discharge. It becomes unnecessary.

In the plasma processing apparatus according to the thirteenth aspect of the present invention, the degree of freedom in designing the shape and volume of the region for generating plasma is large.

In the plasma processing apparatus according to the fourteenth aspect of the present invention, a plasma is generated in a predetermined space, and discharge can be easily performed even if a gas is introduced in a pulsed manner.

In the plasma processing apparatus according to claim 15 of the present invention, since a strong microwave electric field is formed in the plasma chamber, the discharge is stably performed.

In the plasma processing apparatus according to the sixteenth aspect of the present invention, the microwave having the electric field component in the thickness direction of the plate-like dielectric is efficiently coupled into the dielectric from the end face of the dielectric, and the plasma chamber is formed. Since a strong microwave electric field is formed, the discharge is stable.

In the plasma processing apparatus according to the seventeenth aspect of the present invention, since the electron cyclotron resonance discharge can be performed by the magnetic field generating means near the plate-shaped dielectric, stable plasma can be easily generated.

In the plasma processing apparatus according to the eighteenth aspect of the present invention, since the gas is configured to be subjected to microwave discharge in the gas transport pipe, stable plasma can be generated, and stable sample processing can be performed. .

In the plasma processing apparatus according to the nineteenth aspect of the present invention, the transport of the plasma is assisted by the magnetic field generated by the magnetic field generating means, so that the plasma can be efficiently transported to the processing chamber.

In the plasma processing apparatus according to the present invention, the generated ECR plasma can be efficiently transported from the hole in the partition plate to the processing chamber.

In the plasma processing apparatus according to the twenty-first aspect of the present invention, since the plasma is formed so as to be substantially parallel to the partition plate, uniform plasma is transported to the processing chamber, and uniform sample processing is performed. It becomes possible.

According to the plasma processing apparatus of the present invention, since the position of the magnetic field intensity region satisfying the ECR resonance condition changes with time, a stable ECR can be performed even when the gas pressure in the plasma chamber changes. Plasma can be generated, and stable sample processing can be performed.

In the plasma processing apparatus according to the twenty-third aspect of the present invention, the sample can be processed without exposing the RF application electrode and contaminating the metal.

[0410] In the plasma processing apparatus according to the twenty-fourth aspect of the present invention, no RF application electrode is present, and the sample can be processed without metal contamination.

[0411] In the plasma processing apparatus according to claim 25 of the present invention, since the DC electric field is suppressed, the sputtering of the plasma chamber wall is suppressed, and the sample can be processed without metal contamination.

[0412] In the plasma processing apparatus according to the twenty-sixth aspect of the present invention, excitation, dissociation, or ionization plasma is generated by light, and thus no electric field contributing to sputtering is generated. Therefore, a sample without metal contamination can be processed.

[0413] In the plasma processing apparatus according to claim 27 of the present invention, since clean plasma is transported to the processing chamber, the sample can be processed without metal contamination.

[0414] In the plasma processing apparatus according to claim 28 of the present invention, the laser light is enlarged by the convex mirror, so that plasma can be generated in a large area.

[0415] In the plasma processing apparatus according to claim 29 of the present invention, since excitation, dissociation and ionization plasma generation are performed by heat, an electric field contributing to sputtering is not generated. Therefore, a sample without metal contamination can be processed. Also, clean plasma is transported to the processing chamber.
Therefore, the sample can be processed without metal contamination.

[0416]

[0417] In the plasma processing apparatus according to claim 30 of the present invention, since clean plasma is transported to the processing chamber, the sample can be processed without metal contamination.

[0418] In the plasma processing apparatus according to claim 31 of the present invention, a large-diameter sample can be uniformly processed while maintaining the pressure difference between the plasma chamber and the processing chamber.

[0419] In the plasma processing apparatus according to claim 32, 33 of the present invention, since it is uniformly transported to the processing chamber at unevenly generated plasma, it is possible to process samples of a large diameter uniformly.

[0420] In the plasma processing apparatus according to claim 34 of the present invention, since the holes are provided in a counterbore shape, the conductance of the partition plate is controlled while maintaining the mechanical strength of the partition plate, and the plasma chamber is controlled. Pressure difference between the pressure chamber and the processing chamber can be maintained at a predetermined pressure difference.

In the plasma processing apparatus according to claim 35 of the present invention, the sample can be processed while preventing heavy metal contamination.

In the plasma processing apparatus according to claims 36 and 37 of the present invention, the energy of charged particles incident on the sample and the ratio of ions to radicals can be controlled. A desired processed shape can be obtained.

In the plasma processing apparatus according to claim 38 of the present invention, since the plasma density in the processing chamber can be increased, the processing speed is improved.

[0424] In the plasma processing apparatus according to claim 39 of the present invention, since the magnetic field of the processing chamber is variable, the density of plasma transported to the processing chamber can be controlled.

[0425] In the plasma processing apparatus according to claim 40 of the present invention, the plasma is not extinguished on the wall of the processing chamber, and the sample can be processed efficiently.

In the plasma processing apparatus according to claim 41 of the present invention, various amounts of plasma incident on the sample can be controlled, so that etching according to the processing conditions of the sample can be performed.

In the plasma processing apparatus according to claim 42 of the present invention, since the diffusion of plasma is prevented, the sample can be processed efficiently.

In the plasma processing apparatus according to claim 43 of the present invention, since plasma having a large radical / ion ratio is generated, it is effective when isotropically etching the surface of a sample having irregularities. is there.

In the plasma processing apparatus according to claim 44 of the present invention, since a plasma having a small radical / ion ratio is generated, it is effective when the surface of a sample having irregularities is vertically etched.

In the plasma processing apparatus according to claim 45 of the present invention, since various amounts of plasma incident on the sample can be controlled, etching according to the processing conditions of the sample can be performed.

[0431] In the plasma processing apparatus according to claim 46 of the present invention, since the pressure regions of both chambers are expanded, the degree of freedom in controlling the pressure of the processing chamber can be increased.

In the plasma processing apparatus according to claim 47 of the present invention, since the conductance of the bypass can be controlled, the degree of freedom in controlling the pressure of the processing chamber can be increased.

In the plasma processing apparatus according to claim 48 of the present invention, the pressure in both chambers can be freely controlled, so that the process margin can be increased.

In the plasma processing apparatus according to claim 49 of the present invention, since various amounts of plasma incident on the sample can be controlled, etching according to the processing conditions of the sample can be performed.

In the plasma processing apparatus according to claim 50 of the present invention, since a plasma having a large radical / ion ratio is generated, it is effective when isotropically etching the surface of a sample having irregularities. is there.

In the plasma processing apparatus according to the fifty-first aspect of the present invention, a plasma having a small radical / ion ratio is generated, which is effective when the surface of a sample having irregularities is vertically etched.

In the plasma processing apparatus according to claim 52 of the present invention, since different types of gases can be introduced under different conditions, it is possible to control a wide variety of plasma quantities.

In the plasma processing apparatus according to claim 53 of the present invention, since the etching of the sample in the parallel direction is suppressed, a vertical processed shape can be obtained.

In the plasma processing apparatus according to the fifty- fourth aspect of the present invention, the temperature of the plasma can be lowered, so that the sample can be further etched in the vertical direction.

In the plasma processing apparatus according to claim 55 of the present invention, since the amount of plasma incident on the sample can be controlled, it is possible to perform etching according to the processing conditions of the sample.

[0441] In the plasma processing apparatus according to claim 56 of the present invention, since plasma can be generated efficiently, the sample can be processed efficiently.

In the plasma processing apparatus according to the fifty-seventh aspect of the present invention, since the wall of the processing chamber is not etched, foreign matter hardly adheres to the sample.

In the plasma processing method according to claim 58 of the present invention, since the gas is introduced into the plasma chamber in a pulsed manner, a large-area plasma is maintained while maintaining a predetermined pressure difference between the plasma chamber and the processing chamber. Can be transported to a processing chamber.

[0444] In the plasma processing method according to claim 59 of the present invention, since the temperature of the plasma can be reduced by making the plasma a supersonic flow, etching perpendicular to the sample surface can be performed.

In the plasma processing method according to claim 60 of the present invention, since the plasma is excited by light, no electric field contributing to sputtering is generated. Therefore, clean plasma can be transported to the processing chamber.

[0446]

In the plasma processing method according to claim 61 of the present invention, since the transport of plasma is assisted by the magnetic field, the processing speed of the sample is improved.

In the plasma processing method according to claims 62 and 63 of the present invention, since various amounts of plasma incident on the sample can be controlled, etching according to the processing conditions of the sample can be performed.

In the plasma processing method according to claim 64 of the present invention, since a plasma having a large radical / ion ratio is generated, it is effective when isotropically etching the surface of a sample having irregularities. is there.

In the plasma processing method according to claim 65 of the present invention, since a plasma having a large radical / ion ratio is generated, it is effective when the sample surface having irregularities is etched vertically.

In the plasma processing method according to claim 66 of the present invention, since the conductance of the bypass can be controlled, the degree of freedom in controlling the pressure of the processing chamber can be increased.

In the plasma processing method according to claim 67 of the present invention, since various amounts of plasma incident on the sample can be controlled, etching according to the processing conditions of the sample can be performed.

In the plasma processing method according to claim 68 of the present invention, since a plasma having a large radical / ion ratio is generated, it is effective when isotropically etching the surface of a sample having irregularities. is there.

In the plasma processing method according to claim 69 of the present invention, since a plasma having a small radical / ion ratio is generated, it is effective when the sample surface having irregularities is etched vertically.

In the plasma processing method according to claim 70 of the present invention, since various amounts of plasma incident on the sample can be controlled, etching according to the processing conditions of the sample can be performed.

In the plasma processing method according to claim 71 of the present invention, since the etching of the sample in the parallel direction is suppressed, a vertical processed shape can be obtained.

In the plasma processing method according to claim 72 of the present invention, since the temperature of the plasma can be lowered, the sample can be further etched in the vertical direction.

In the plasma processing method according to claim 73 of the present invention, since various amounts of plasma incident on the sample can be controlled, etching according to the processing conditions of the sample can be performed.

In the plasma processing method according to claim 74 of the present invention, the plasma can be generated efficiently, so that the sample can be processed efficiently.

In the plasma processing method according to claim 75 of the present invention, since the walls of the processing chamber are not etched, foreign matter hardly adheres to the sample.

[Brief description of the drawings]

FIG. 1 is a sectional view schematically showing a configuration of a dry etching apparatus to which the present invention is applied.

FIG. 2 is a graph showing pressure characteristics when an etching gas is supplied in pulses.

FIG. 3 is a schematic sectional view illustrating the structure of a valve 8a that can be used as the pulse gas valve 8 in the first and second embodiments.

FIG. 4 is a schematic sectional view showing a configuration of a third embodiment.

FIG. 5 is a schematic sectional view showing a configuration of a fourth embodiment.

FIG. 6 is a schematic sectional view showing the configuration of a fifth embodiment.

FIG. 7 is a schematic sectional view showing a configuration of a sixth embodiment.

FIG. 8 is a partially sectional perspective view showing the structure of an air storage tank 131.

FIG. 9 is a schematic sectional view showing a configuration of a seventh embodiment.

FIG. 10 is a schematic sectional view showing a configuration of an eighth embodiment.

FIG. 11 is a schematic sectional view showing a configuration of a ninth embodiment.

FIG. 12 is a plan view showing the structure of an iris 211a.

FIG. 13 is a plan view showing a structure of an iris 211b.

FIG. 14 is a schematic sectional view showing the configuration of the tenth embodiment.

FIG. 15 is a schematic sectional view showing the configuration of the eleventh embodiment.

FIG. 16 is a schematic sectional view showing the configuration of a twelfth embodiment.

FIG. 17 is a schematic sectional view showing the configuration of the eleventh embodiment.

FIG. 18 is a schematic sectional view showing the configuration of a fourteenth embodiment.

FIG. 19 is a graph showing a magnetic field intensity distribution according to the fifteenth embodiment.

FIG. 20 is a schematic sectional view showing the configuration of the eighteenth embodiment.

FIG. 21 is a schematic sectional view showing the configuration of a nineteenth embodiment.

FIG. 22 is a schematic sectional view showing a configuration of a twentieth embodiment.

FIG. 23 is a schematic sectional view showing a configuration of a twenty-first embodiment.

FIG. 24 is a schematic sectional view showing the configuration of a twenty-second embodiment.

FIG. 25 is a schematic sectional view showing the configuration of the twenty-third embodiment.

FIG. 26 is a schematic sectional view showing the configuration of the twenty-fourth embodiment.

FIG. 27 is a schematic sectional view showing the configuration of the twenty-fifth embodiment.

FIG. 28 is a schematic sectional view showing the configuration of the twenty-sixth embodiment.

FIG. 29 is a schematic sectional view showing a configuration of a twenty-seventh embodiment.

FIG. 30 is a schematic sectional view showing the configuration of a twenty-eighth embodiment.

FIG. 31 is a schematic sectional view showing a configuration of a thirtieth embodiment.

FIG. 32 is a schematic sectional view showing a configuration of a thirty-first embodiment.

FIG. 33 is a schematic sectional view showing the structure of a 32nd embodiment.

FIG. 34 is a schematic sectional view showing the configuration of a thirty-third embodiment.

FIG. 35 is a schematic sectional view showing the structure of a thirty-fourth embodiment.

FIG. 36 is a schematic sectional view showing a configuration of a thirty-fifth embodiment.

FIG. 37 is a graph illustrating a 36th embodiment.

FIG. 38 is a graph illustrating a 37th embodiment.

FIG. 39 is a graph for explaining a 38th embodiment;

FIG. 40 is a schematic sectional view showing the structure of a thirty-ninth embodiment.

FIG. 41 is a schematic sectional view showing the structure of a fortieth embodiment.

FIG. 42 is a schematic sectional view showing a configuration of a forty-first embodiment.

FIG. 43 is a schematic sectional view showing the structure of a forty-second embodiment.

FIG. 44 is a graph illustrating the operation of the forty-third embodiment.

FIG. 45 is a schematic sectional view showing a configuration of a forty-fifth embodiment.

FIG. 46 is a schematic sectional view showing the structure of the 47th embodiment.

FIG. 47 is a graph showing the operation of the forty-eighth embodiment.

FIG. 48 is a cross-sectional view showing a structure of a conventional plasma processing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Processing chamber 2 Plasma chamber 3,421,423,431,441,450 Partition plate 4,135,422,424,432,433 Hole 5 Exhaust port 6,611 stage 7 Sample 8,8b Pulse gas valve 9 Driver 10 Gas Induction tube 11 Waveguide 12, 235 Microwave introduction window 13 Magnetic field coil 101 Body 112 Needle 104 Electromagnetic coil 105 Gas outlet 106 Gas introduction port 107 Stopper 122 Magnetic shield 131 Gas storage tank 141 Gas introduction pipe 142 Pressure detector 143 Pressure control Device 144 Pressure regulator 151 Gas introduction pipe 152 Gas storage chamber 211 Iris 221 Bell jar 222 Space 223 Partition plate 224 Gas introduction path 231 Rectangular waveguide 232 Tapered waveguide 233 Thin waveguide 236 Bar magnet 241 Transport pipe 251 First Magnetic field of Il 252 Second magnetic field coil 263 Electrode 264 Dielectric film 271 Side wall 272 RF coil 273 Conductor 275 Conductive substance 281 Window 282 Light source 284 Quartz glass 285 Laser light source 286 Convex mirror 292 Heater 311 Inner wall 452,612 DC power supply 453,614 RF 511 Processing room magnetic field coil 521 Permanent magnet 711 Bypass 713 Conductance valve 714 Exhaust port 801 Microwave generator 802 Controller 831,841 First pulse gas valve 833,842 Second pulse gas valve

Continuation of the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/31 H01L 21/302 B (72) Inventor Hiroki Odera 8-1-1 Honcho Tsukaguchi, Amagasaki City, Hyogo Prefecture Mitsubishi Electric Corporation Basic Semiconductor Research In-house (72) Ax Takaichi 8-1-1, Tsukaguchi-Honmachi, Amagasaki-shi, Hyogo Mitsubishi Electric Corporation Semiconductor Basic Research Laboratory (72) Inventor, Toshihiro Ueda 8-1-1, Tsukaguchi-Honmachi, Amagasaki-shi, Hyogo Mitsubishi (56) References JP-A-60-50923 (JP, A) JP-A-59-66719 (JP, A) JP-A-5-290995 (JP, A) JP-A-4- 343421 (JP, A) JP-A-4-335528 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01L 21/205 C23C 16/50 C23F 4/00 H01L 21/3065 H01L 21/31

Claims (75)

(57) [Claims] (A) a plasma chamber in which a plasma is generated by an excitation source using a gas; (b) a processing chamber in which a sample is disposed; and (c) a space between the plasma chamber and the processing chamber. Provided in
A partition plate having a hole communicating from the plasma chamber to the processing chamber; (d) vacuum exhaust means for exhausting the processing chamber; and (e) gas supply means for supplying the gas in a pulsed manner to the plasma chamber. Equipped with a plasma processing apparatus. 2. The plasma processing apparatus according to claim 1, wherein said gas supply means has a vacuum seal portion having a non-contact structure. 3. The gas supply means includes: (e-1) a gas introduction cylinder including one end and another end having a conical surface, wherein the gas flows between the one end and the other end; 2) a needle including a cone that reciprocates between the one end and the other end and that is fitted with a gap with the cone surface at the other end; and (e-3) a region of the reciprocation of the needle. The plasma processing apparatus according to claim 2, further comprising: a stopper that restricts the gap to adjust the gap. 4. The plasma processing apparatus according to claim 3, wherein said gas supply means further comprises: (e-4) an electromagnetic induction means for controlling said reciprocating movement of said needle. 5. The plasma processing apparatus further comprises: (f) a coil for applying a magnetic field to the plasma chamber, wherein the gas supply unit controls: (e-1) an operation of the gas supply unit by electromagnetic induction. The plasma processing apparatus according to claim 1, further comprising: (e-2) a magnetic shield covering the electromagnetic induction means. 6. The plasma processing apparatus further comprises: (f) a coil for applying a first magnetic field to the plasma chamber, wherein the gas supply means comprises: (e-1) electromagnetically controlling the operation of the gas supply means. The gas supply means is controlled by the electromagnetic induction means.
The plasma processing apparatus according to claim 1, wherein the magnetic field of the first direction and the first magnetic field are arranged in a direction orthogonal to each other. 7. (f) further comprising an air storage tank interposed between the gas supply means and the plasma chamber, surrounding the plasma chamber, and having a plurality of gas introduction holes for introducing the gas. Item 2. A plasma processing apparatus according to item 1. 8. The apparatus according to claim 1, further comprising: (f) a regulator for detecting a back pressure of the gas supply means and supplying the gas having a pressure controlled based on the back pressure to the gas supply means. Plasma processing equipment. 9. The pressure regulator, wherein: (f-1) a pressure detector for detecting a back pressure of the gas supply means; (f-2) a pressure regulator for adjusting the pressure of the gas; The plasma processing apparatus according to claim 8, further comprising: 3) a pressure control device that controls an operation of the pressure regulator based on an output of the pressure detector. (F) further comprising an air storage chamber provided on a side opposite to the plasma chamber with respect to the gas supply means, wherein the gas is temporarily stored before the gas enters the gas supply means.
The plasma processing apparatus according to claim 1. 11. The plasma processing apparatus according to claim 10, wherein said gas storage chamber has a volume that is about 100 times as large as said gas flowing in a pulsed manner in said gas supply means. 12. The excitation source is a microwave, (f) a waveguide for guiding the microwave to the plasma chamber, and (g) an interposition between the waveguide and the plasma chamber. And
The plasma processing apparatus according to claim 1, further comprising an introduction surface smaller than a cross-sectional area of the waveguide. 13. The excitation source is a microwave, and the plasma chamber is provided so as to be surrounded by (a-1) a metal wall and (a-2) the wall, and transmits the microwave. The plasma processing apparatus according to claim 1, further comprising a bell jar formed of a material. 14. The partition plate has: (c-1) a gas introduction passage connected to the gas supply means and flowing the gas, wherein the gas is supplied to a space surrounded by the partition plate and the bell jar. The plasma processing apparatus according to claim 13, which is supplied. 15. The excitation source is a microwave; (f) a waveguide that guides the microwave; and (g) a plate-like waveguide that couples the microwave from the waveguide to the plasma chamber. The plasma processing apparatus according to claim 1, further comprising: a dielectric. 16. The plasma processing apparatus according to claim 15, wherein the microwave has an electric field component in a thickness direction of the plate-like dielectric and is coupled to the plasma chamber. 17. The plasma processing apparatus according to claim 16, further comprising: (h) a magnetic field generating means formed near the plate-like dielectric and configured to generate a magnetic field having a component orthogonal to an electric field direction of the microwave. 18. The excitation source is a microwave, and (f) a waveguide for guiding the microwave; and (g) a waveguide that penetrates the waveguide and is connected to the gas supply unit and the plasma chamber. The plasma processing apparatus according to claim 1, further comprising a microwave-transmissive gas transport pipe provided therebetween. 19. The apparatus according to claim 19, wherein the excitation source is a microwave, and further comprising: (f) a magnetic field generating means disposed around the plasma chamber and forming a magnetic field intensity region satisfying an electron cyclotron resonance condition in the plasma chamber; 2. The magnetic field lines heading for the partition plate and the microwaves generate electron cyclotron resonance plasma in the plasma chamber.
The plasma processing apparatus as described in the above. 20. The plasma processing apparatus according to claim 19, wherein the magnetic field intensity region is formed near the partition plate. 21. The plasma processing apparatus according to claim 19, wherein the magnetic field intensity region is formed substantially parallel to the partition plate. 22. The plasma processing apparatus according to claim 19, wherein the position of the magnetic field intensity region changes with time. 23. The excitation source is RF power, further comprising: (f) an RF application electrode provided in the plasma chamber; and (g) a dielectric film covering a surface of the RF application electrode. The plasma processing apparatus according to claim 1, wherein the power is applied between the RF application electrode and the partition plate. 24. The excitation source is RF power, the plasma chamber has (a-1) a side wall made of a dielectric, and the plasma processing apparatus is (f) disposed around the side wall. The plasma processing apparatus according to claim 1, further comprising: an RF coil; and (g) a conductive material covering a surface of the RF coil, wherein the RF power is supplied by the RF coil. 25. The plasma processing apparatus according to claim 24, wherein a thickness of the conductive material is smaller than a skin thickness determined by a conductivity of the conductive material and a frequency of the RF power. 26. The plasma processing apparatus according to claim 1, wherein the excitation source is light, and the plasma chamber has (a-1) at least one window that transmits the light. 27. The plasma processing apparatus according to claim 24, wherein the plasma chamber further comprises: (a-2) an insulating film covering an inner wall of the plasma chamber. 28. The plasma processing apparatus according to claim 27, wherein the excitation source is laser light, and the plasma processing apparatus further comprises: (f) a convex mirror for expanding the laser light. 29. The excitation source is heat, the plasma processing device is interposed between the plasma chamber and (f) the gas supply means, further comprising a heating device for supplying the heat, the plasma The chamber further comprises (a-2) an insulating film covering an inner wall of the plasma chamber.
To that, the plasma processing apparatus according to claim 1. 30. The plasma chamber, any one of (a-1) Si, Al , O, N,
The plasma processing apparatus according to claim 1, further comprising an inner wall made of a compound containing 99% or more of a plurality of elements. 31. A plurality of said holes, each having a different diameter.
2. The plasma processing apparatus according to claim 1, wherein: 32. A plurality of holes, each having a diameter
2. The plasma processing apparatus according to claim 1, wherein there are a plurality of types . 33. The hole in the center of the partition plate.
The diameter of the hole present in the peripheral portion of the partition plate is
The plasma processing apparatus according to claim 25 , wherein the plasma processing apparatus is smaller than the diameter . 34. The plasma processing apparatus according to claim 34, wherein the hole is provided on the side of the plasma chamber.
A first cylindrical element having a first diameter, the processing chamber;
And a cylindrical second hole element having a second diameter on the side.
Wherein said first diameter is greater than said second diameter.
Item 2. A plasma processing apparatus according to item 1 . 35. The partition plate having at least a surface formed of stone.
2. The plasma processing apparatus according to claim 1, wherein the apparatus is made of British glass . 36. The partition plate is made of an insulating material.
Applying a DC voltage between the partition plate and the plasma chamber,
The plasma processing apparatus according to claim 1 . 37. The partition plate is made of an insulating material.
Applying an RF voltage between the partition plate and the plasma chamber;
The plasma processing apparatus according to claim 1 . 38. A magnetic field is formed in the processing chamber.
Item 2. A plasma processing apparatus according to item 1 . 39. (f) Formed around the processing chamber
39. The plasma processing apparatus according to claim 38, further comprising a processing chamber magnetic field coil . 40. (f) Formed around the processing chamber
39. The plasma processing apparatus according to claim 38, further comprising a permanent magnet . 41. A DC power supply is provided between the sample and the processing chamber.
The plasma processing apparatus according to claim 1, wherein a pressure is applied . 42. An RF power source is provided between the sample and the processing chamber.
The plasma processing apparatus according to claim 1, wherein a force is applied . 43. The magnitude of the DC voltage is set in the processing chamber.
Positive correlation with time variation of the gas pressure
The plasma processing apparatus according to claim 41 , wherein the plasma processing apparatus changes with the following . 44. The magnitude of the DC voltage is set in the processing chamber.
Negative correlation with time change of gas pressure
The plasma processing apparatus according to claim 41 , wherein the plasma processing apparatus changes with the following . 45. The pressure of the gas in the processing chamber
RF power applied to the sample in response to temporal changes
2. The plasma processing apparatus according to claim 1, wherein the width is changed with time . 46. (f) The plasma chamber and the processing chamber
The plasma processing apparatus according to claim 1, further comprising a bypass that communicates with the plasma processing apparatus. 47. The bypass may further comprise : (f-1) a controller for controlling the conductance of the bypass.
The plasma processing apparatus according to claim 46, further comprising a conductance valve . 48. (f) independent of the processing chamber,
Further comprising second evacuation means for evacuating the vacuum chamber.
Item 2. A plasma processing apparatus according to item 1 . 49. The excitation source excites the plasma.
Energy supply means for supplying excitation energy
And controlling the excitation energy supply means to control the excitation energy.
Excitation energy control means for changing energy with time
The plasma processing apparatus according to claim 1, comprising: 50. The excitation energy is applied to the processing chamber.
ON when the gas pressure is relatively high
And change off at a relatively low point in time
Item 50. The plasma processing apparatus according to item 49 . 51. The excitation energy is applied to the processing chamber.
ON when the gas pressure is relatively low
And change off at relatively high points in time
Item 50. The plasma processing apparatus according to item 49 . 52. A gas supply means comprising a plurality of gas supply means.
The plasma processing apparatus according to claim 1 . 53. A method according to claim 53 , wherein :
53. The plasma processing apparatus according to claim 52, wherein at least one introduces a deposition gas . 54. A method according to claim 54 , wherein :
53. The plasma processing apparatus according to claim 52, wherein at least one introduces a rare gas . 55. (f) A second gas is charged into the processing chamber.
Further comprising second gas supply means for supplying the gas in a gaseous manner.
2. The plasma processing apparatus according to 1 . 56. The processing apparatus according to claim 56, wherein said second gas supply means is provided for said processing.
The temporal change of the pressure of the gas in the chamber has a maximum value
A second gas is supplied to the processing chamber near the timing.
56. The plasma processing apparatus according to claim 55, wherein 57. The gas produces a non-reactive plasma.
Wherein the second gas produces a reactive plasma.
57. The plasma processing apparatus according to claim 55 or claim 56, wherein: 58. Plasma generated in a plasma chamber
Plasma processing of the sample placed in the processing chamber
A plasma processing method, comprising: (a) introducing a gas having a periodically fluctuating pressure into the plasma chamber;
A step of introducing, the selective route to the processing chamber from (b) the plasma chamber
And a step of introducing plasma. 59. In the step (b), the plasma
Period when the pressure in the processing chamber becomes 1.9 times or more of the pressure in the processing chamber
The plasma processing method according to claim 58, wherein an interval exists . 60. The plasma is excited by light.
The plasma processing method according to claim 58, wherein 61. A magnetic field is formed in the processing chamber.
Item 58. The plasma processing method according to Item 58 . 62. A DC power supply is provided between the sample and the processing chamber.
The plasma processing method according to claim 58, wherein a pressure is applied . 63. An RF power source between the sample and the processing chamber.
The plasma processing method according to claim 58, wherein a force is applied . 64. The magnitude of the DC voltage is set in the processing chamber.
Positive correlation with time variation of the gas pressure
63. The plasma processing method according to claim 62, wherein the method is changed by: 65. The magnitude of the DC voltage is set in the processing chamber.
Negative correlation with time change of gas pressure
63. The plasma processing method according to claim 62, wherein the method is changed by: 66. The pressure of the gas in the processing chamber
RF power applied to the sample in response to temporal changes
59. The plasma processing method according to claim 58, wherein the width is changed with time . 67. Excitation energy provided from said excitation source
The plasma processing method according to claim 58, wherein the energy varies with time . 68. The excitation energy is applied to the processing chamber.
ON when the gas pressure is relatively high
And change off at a relatively low point in time
Item 68. The plasma processing method according to Item 67 . 69. The excitation energy is applied to the processing chamber.
ON when the gas pressure is relatively low
And change off at relatively high points in time
Item 68. The plasma processing method according to Item 67 . 70. A gas comprising a plurality of gases,
59. The plasma processing method according to claim 58, wherein the gas having a periodically varying pressure is introduced into the plasma chamber. 71. At least one of said gases is a deposition gas.
71. The plasma processing method according to claim 70, wherein 72. At least one of said gases is a noble gas
71. The plasma processing method according to claim 70 . 73. (c) A second gas is injected into the processing chamber
59. The plasma processing method according to claim 58, further comprising the step of : 74. The pressure of the gas in the processing chamber
In the vicinity of the timing when the temporal change has a maximum value,
59. The plasma processing method according to claim 58, wherein the second gas is supplied to the science room . 75. The gas produces a non-reactive plasma.
Wherein the second gas produces a reactive plasma.
75. The plasma processing method according to claim 73 or claim 74 .