JP2892455B2 - TAB tape - Google Patents
TAB tapeInfo
- Publication number
- JP2892455B2 JP2892455B2 JP20018390A JP20018390A JP2892455B2 JP 2892455 B2 JP2892455 B2 JP 2892455B2 JP 20018390 A JP20018390 A JP 20018390A JP 20018390 A JP20018390 A JP 20018390A JP 2892455 B2 JP2892455 B2 JP 2892455B2
- Authority
- JP
- Japan
- Prior art keywords
- plating film
- tin
- tab tape
- nickel
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007747 plating Methods 0.000 claims description 85
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910000679 solder Inorganic materials 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 14
- 229910000531 Co alloy Inorganic materials 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 239000010948 rhodium Substances 0.000 claims description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- WDHWFGNRFMPTQS-UHFFFAOYSA-N cobalt tin Chemical compound [Co].[Sn] WDHWFGNRFMPTQS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- KVCNTPMIAMJSNS-UHFFFAOYSA-N [Co][Ni][Sn] Chemical compound [Co][Ni][Sn] KVCNTPMIAMJSNS-UHFFFAOYSA-N 0.000 claims description 3
- 239000011889 copper foil Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 4
- 239000006023 eutectic alloy Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はTAB（Tape Automated Bonding）テープに関
する。Description: TECHNICAL FIELD The present invention relates to a TAB (Tape Automated Bonding) tape.
（従来の技術） TABテープは半導体素子と外部接続用リード等の外部
導体回路とを電気的に接続するもので、銅箔を用いて微
細なパターンに形成しうることから、ワイヤを用いて接
続するよりも多ピンの接続が可能となる。(Prior art) TAB tape is used to electrically connect semiconductor elements and external conductor circuits such as external connection leads. Since it can be formed into a fine pattern using copper foil, it is connected using wires. It is possible to connect more pins than before.
TABテープのインナーリードと半導体素子との接合
は、半導体素子に形成した金等のバンプとの間で金−錫
共晶合金による場合が多く、そのためにTABテープは銅
箔で形成されたリードパターン上に錫めっき皮膜を形成
したものが用いられる。またTABテープの外部接続用の
アウターリードと外部導体回路との間は、通常錫めっき
皮膜を利用してはんだ付けにより接合されている。The bonding between the inner lead of the TAB tape and the semiconductor element is often made of a gold-tin eutectic alloy between bumps such as gold formed on the semiconductor element, so the TAB tape is a lead pattern formed of copper foil. What formed the tin plating film on it is used. Further, the outer lead for external connection of the TAB tape and the outer conductor circuit are usually joined by soldering using a tin plating film.
（発明が解決しようとする課題） しかしながら上記のTABテープには次のような問題点
がある。(Problems to be solved by the invention) However, the above TAB tape has the following problems.
すなわち、半導体素子とTABテープのインナーリード
とを金−錫共晶合金によって接合する際には400℃〜500
℃の高温のボンディング条件が必要となる。このインナ
ーリードに加わる熱は直ちにTABテープのアウターリー
ドに伝わってアウターリードが加熱され、このため、ア
ウターリード素材の銅が錫めっき皮膜中に拡散するとい
う問題が生じる。銅が錫めっき皮膜中に拡散すると、結
果的に錫めっきを行わなかったのと等しくなり、アウタ
ーリードと外部導体回路とのはんだ付け性が阻害される
という問題が生じる。また一時的にアウターリードと外
部導体回路との接合がなされても、もともと銅は錫中へ
拡散しやすい性質を有するため、経時的に銅の錫めっき
皮膜中への拡散が生じるため、はんだ付け強度が次第に
劣化し、剥離が生じるという本質的な欠陥がある。That is, when the semiconductor element and the inner lead of the TAB tape are joined by a gold-tin eutectic alloy, 400 ° C. to 500 ° C.
High temperature bonding conditions of ℃ are required. The heat applied to the inner leads is immediately transmitted to the outer leads of the TAB tape, and the outer leads are heated, which causes a problem that copper of the outer lead material diffuses into the tin plating film. When the copper diffuses into the tin plating film, the result is the same as when tin plating is not performed, and the problem that the solderability between the outer lead and the external conductor circuit is hindered arises. Also, even if the outer lead and the outer conductor circuit are temporarily joined, copper originally diffuses easily into tin, so copper diffuses into the tin plating film over time, so soldering There is an essential defect that the strength gradually deteriorates and peeling occurs.
錫めっき皮膜を厚くすれば、上記の問題点もある程度
解消しうるが、厚付けすると、半導体素子とインナーリ
ードとの金−錫共晶合金による接合の際、錫分が余り、
この余分な錫分が流れ出してインナーリード間を短絡さ
せるおそれがある。このため錫めっき皮膜の厚さは0.5
μｍ程度と極めて薄いのが現状である。If the tin plating film is thickened, the above-mentioned problems can be solved to some extent.However, when the thickness is increased, when the semiconductor element and the inner lead are joined by a gold-tin eutectic alloy, the tin content is excessive,
The excess tin may flow out and short-circuit the inner leads. Therefore, the thickness of the tin plating film is 0.5
At present, the thickness is as thin as about μm.
また一方、インナーリードを半導体素子に接合する際
には、ボンディングツールによりインナーリードを外方
から押圧して半導体素子に圧着せしめるため、溶融した
錫等がボンディングツールに付着し、このためひんぱん
にボンディングツールのクリーニングを行うことを余儀
なくされ、ひどい場合にはボンディングが不可能となる
問題点もある。On the other hand, when the inner lead is bonded to the semiconductor element, molten tin or the like adheres to the bonding tool because the inner lead is pressed from the outside by a bonding tool and pressed against the semiconductor element. There is also a problem that the tool must be cleaned, and in severe cases, bonding cannot be performed.
本発明は上記の問題点を解消すべくなされたものであ
り、その目的とするところは、銅の錫めっき皮膜中への
拡散を防止して、外部接続用のアウターリードと外部導
体回路とのはんだ付け性が良好となり、またボンディン
グツールへの錫等の付着が防止できるTABテープを提供
するにある。The present invention has been made in order to solve the above-mentioned problems, and an object of the present invention is to prevent the diffusion of copper into a tin plating film, thereby forming an outer lead for external connection and an external conductor circuit. An object of the present invention is to provide a TAB tape which has good solderability and can prevent adhesion of tin or the like to a bonding tool.
（課題を解決するための手段） 上記目的による本発明に係るTABテープでは、銅また
は銅合金により接続用回路パターンが形成され、インナ
ーリードおよびアウターリード上に錫めっき皮膜または
はんだめっき皮膜が形成されているTABテープにおい
て、少なくともアウターリード上に錫めっき皮膜または
はんだめっき皮膜の下地として、ニッケル、コバルト、
錫−ニッケル合金、錫−コバルト合金、ニッケル−コバ
ルト合金、錫−ニッケル−コバルト合金から選ばれる金
属による第１のめっき皮膜と、この第１のめっき皮膜上
に形成される、金、銀、白金、パラジウム、ロジウムか
ら選ばれる金属による第２のめっき皮膜とが形成されて
いることを特徴としている。(Means for Solving the Problems) In the TAB tape according to the present invention for the purpose described above, a connection circuit pattern is formed by copper or a copper alloy, and a tin plating film or a solder plating film is formed on inner leads and outer leads. TAB tape, nickel, cobalt, as a base of tin plating film or solder plating film on at least the outer leads
A first plating film made of a metal selected from a tin-nickel alloy, a tin-cobalt alloy, a nickel-cobalt alloy, and a tin-nickel-cobalt alloy; and gold, silver, and platinum formed on the first plating film. , Palladium, and a second plating film made of a metal selected from rhodium.
インナーリードに形成する錫めっき皮膜またははんだ
めっき皮膜は半導体素子と接合する側の片側にのみ形成
すると好適である。It is preferable that the tin plating film or the solder plating film formed on the inner lead is formed only on one side of the side joined to the semiconductor element.
第１図はTABテープの断面図を示し、ポリイミド等の
耐熱性を有する支持フィルム10上に形成されている銅箔
をエッチングして接続回路パターンが形成されている。
12はそのインナーリード、13はアウターリードである。
なお銅箔は銅材もしくは銅合金材からなる。FIG. 1 is a sectional view of a TAB tape, in which a copper foil formed on a heat-resistant support film 10 such as polyimide is etched to form a connection circuit pattern.
12 is the inner lead and 13 is the outer lead.
The copper foil is made of a copper material or a copper alloy material.
本発明の第１の発明に係るTABテープでは、接続回路
パターンの銅箔上に、第２図に示されるように、第１の
めっき皮膜18、第２のめっき皮膜20を介して電解めっき
による錫めっき皮膜22を形成する。In the TAB tape according to the first invention of the present invention, as shown in FIG. 2, electrolytic plating is performed on the copper foil of the connection circuit pattern via the first plating film 18 and the second plating film 20. A tin plating film 22 is formed.
第１のめっき皮膜18は、半導体素子とインナーリード
12との接合の際加わる、400℃〜500℃の高温下にあって
も、素材の銅が当該第１のめっき皮膜18中に拡散しにく
い金属皮膜とする。このような第１のめっき皮膜18は、
ニッケル、コバルト、錫−ニッケル合金、錫−コバルト
合金、ニッケル−コバルト合金、および錫−ニッケル−
コバルト合金のめっき皮膜中より選択される。The first plating film 18 includes a semiconductor element and an inner lead.
A metal film in which copper as a material is hardly diffused into the first plating film 18 even at a high temperature of 400 ° C. to 500 ° C., which is added at the time of joining with the substrate 12. Such a first plating film 18 is
Nickel, cobalt, tin-nickel alloy, tin-cobalt alloy, nickel-cobalt alloy, and tin-nickel
It is selected from plating films of cobalt alloys.
上記の第１のめっき皮膜18と錫めっき皮膜22の合金化
を防止するため、第１のめっき皮膜18と錫めっき皮膜22
との間に第２のめっき皮膜20を介在させる。この第２の
めっき皮膜20は、前記の高温条件下にあっても、下層の
第１のめっき皮膜18、上層の錫めっき皮膜20の各々と合
金化しない金属皮膜もしくは合金化によりはんだ付け性
を低下させない金属皮膜から選択される。このような金
属皮膜は、金、銀、白金、パラジウム、ロジウムの貴金
属皮膜である。In order to prevent alloying between the first plating film 18 and the tin plating film 22, the first plating film 18 and the tin plating film 22 are formed.
And the second plating film 20 is interposed therebetween. The second plating film 20, even under the above-mentioned high-temperature conditions, has a solderability by a metal film that does not alloy with each of the lower first plating film 18 and the upper tin plating film 20, or by alloying. It is selected from metal films that do not lower. Such a metal film is a noble metal film of gold, silver, platinum, palladium, and rhodium.
錫めっき皮膜22の下地としての上記第１のめっき皮膜
18および第２のめっき皮膜20は少なくともアウターリー
ドに形成すればよい。またインナーリード側の錫めっき
皮膜22は半導体素子と接合する側の片面にのみ形成する
と好適である。The first plating film as a base for the tin plating film 22
The 18 and the second plating film 20 may be formed at least on the outer leads. Further, it is preferable that the tin plating film 22 on the inner lead side is formed only on one surface on the side to be joined to the semiconductor element.
錫めっき皮膜16および22は従来のように銅箔上に直接
にめっきする場合は無電解めっきによって形成できる
が、上記のように下地が貴金属皮膜のときは無電解めっ
きでは形成できないので電解めっきによって形成する。Tin plating films 16 and 22 can be formed by electroless plating when plating directly on copper foil as in the past, but cannot be formed by electroless plating when the base is a noble metal film as described above. Form.
なお、錫めっき皮膜16および22の代りに、はんだめっ
き皮膜を形成してもよい。この場合にも、素材の銅のは
んだめっき皮膜への拡散の防止と、良好なはんだ付け性
を得ることができる。Note that a solder plating film may be formed instead of the tin plating films 16 and 22. Also in this case, it is possible to prevent copper from diffusing into the solder plating film and obtain good solderability.
各層のめっき厚は特に限定されないが、第２図の第１
のめっき皮膜18は0.1μｍ〜1.5μｍ、第２のめっき皮膜
20は0.01μｍ〜1.0μｍ程度が良好である。また錫めっ
き皮膜16、22あるいははんだめっき皮膜は、半導体素子
付時の流れ出しを防止するため１μｍ以下が好ましい。The plating thickness of each layer is not particularly limited.
The plating film 18 is 0.1 μm to 1.5 μm, and the second plating film
20 is preferably about 0.01 μm to 1.0 μm. Further, the thickness of the tin plating films 16 and 22 or the solder plating film is preferably 1 μm or less in order to prevent outflow when the semiconductor element is mounted.
（実施例） 以下に具体的実施例を示す。(Examples) Specific examples will be described below.
実施例１ 銅箔上に直接錫めっき皮膜を0.5μｍ形成した比較例
１と、銅箔上に第１のめっき皮膜としてニッケルめっき
皮膜を0.5μｍ形成し、その上に第２のめっき皮膜とし
てパラジウムめっき皮膜を0.1μｍ形成し、さらにその
上に錫めっき皮膜を0.5μｍ形成した実施例１の各々のT
ABテープを500℃で２秒間加熱した後、250℃のはんだ中
に浸漬した。その際のはんだ付け性をソルダーチェッカ
ーで比較したデータを表１に示す。Example 1 Comparative Example 1 in which a tin plating film was directly formed on a copper foil by 0.5 μm, and a nickel plating film was formed in a thickness of 0.5 μm as a first plating film on a copper foil, and palladium was formed thereon as a second plating film. Each T of Example 1 in which a plating film was formed at 0.1 μm and a tin plating film was further formed thereon at 0.5 μm
After the AB tape was heated at 500 ° C. for 2 seconds, it was immersed in solder at 250 ° C. Table 1 shows data obtained by comparing the solderability at that time with a solder checker.
表１から明らかなように、比較例１に比して実施例１
の方がはんだ付け性が良好であった。 As is clear from Table 1, Example 1 was compared with Comparative Example 1.
Had better solderability.
実施例１で、第１のめっき皮膜をコバルトめっき皮膜
にした場合、また第２のめっき皮膜を金、銀、白金、或
いはロジウムの各めっき皮膜にしても上記と同様の良好
な結果を得た。In Example 1, when the first plating film was a cobalt plating film, and when the second plating film was a gold, silver, platinum, or rhodium plating film, the same good results as described above were obtained. .
実施例２ 銅箔上に直接錫めっき皮膜を0.5μｍ形成した比較例
２と、銅箔上に第１のめっき皮膜として錫−ニッケル合
金皮膜を0.5μｍ形成し、その上に第２のめっき皮膜と
して金めっき皮膜を0.1μｍ形成し、さらにその上に錫
めっき皮膜を0.5μｍ形成した実施例２の各々のTABテー
プを220℃で１時間加熱した後、250℃のはんだ中に浸漬
した。その際のはんだ付け性を実施例１と同様にソルダ
ーチェッカーで比較したデータを表２に示す。Example 2 Comparative Example 2 in which a tin plating film was directly formed on a copper foil by 0.5 μm, and a tin-nickel alloy film was formed in a thickness of 0.5 μm as a first plating film on a copper foil, and a second plating film was formed thereon. Each of the TAB tapes of Example 2 in which a gold plating film was formed to a thickness of 0.1 μm and a tin plating film was formed thereon to a thickness of 0.5 μm was heated at 220 ° C. for 1 hour and then immersed in solder at 250 ° C. Table 2 shows data obtained by comparing the solderability at that time with a solder checker as in Example 1.
表２から明らかなように、比較例２に比して実施例２
の方が良好なはんだ付け性が得られている。 As is clear from Table 2, Example 2 was compared with Comparative Example 2.
Has better solderability.
また実施例２で、第１のめっき皮膜を錫−コバルト合
金、ニッケル−コバルト合金、錫−ニッケル−コバルト
合金の各めっき皮膜にした場合、および第２のめっき皮
膜を銀、白金、パラジウム、ロジウムにした場合も良好
なはんだ付け性が得られた。In Example 2, the first plating film was a tin-cobalt alloy, a nickel-cobalt alloy, or a tin-nickel-cobalt alloy plating film, and the second plating film was silver, platinum, palladium, or rhodium. In this case, good solderability was obtained.
また上記各実施例において、錫めっき皮膜の代りには
んだめっき皮膜にしても良好なはんだ付け性が得られ
た。In each of the above examples, good solderability was obtained even when a solder plating film was used instead of the tin plating film.
さらに上記各実施例において、インナーリードに錫め
っき皮膜を半導体素子と接合する側の片面にのみ形成
し、ボンディングツール側には形成しなかったところ、
ボンディングツールに錫あるいは金−錫が付着せず、良
好にインナーリードのボンディングが行えた。Furthermore, in each of the above examples, the tin plating film was formed on the inner lead only on one side on the side joined to the semiconductor element, and was not formed on the bonding tool side.
Tin or gold-tin did not adhere to the bonding tool, and the inner lead was successfully bonded.
以上、本発明につき好適な実施例を挙げて種々説明し
たが、本発明はこの実施例に限定されるものではなく、
発明の精神を逸脱しない範囲内で多くの改変を施し得る
のはもちろんのことである。As described above, the present invention has been described in various ways with reference to preferred embodiments. However, the present invention is not limited to these embodiments.
Of course, many modifications can be made without departing from the spirit of the invention.
（発明の効果） 以上のように本発明によれば、銅または銅合金よりな
る接続用回路パターンと錫めっき皮膜もしくははんだめ
っき皮膜の間に上記しためっき皮膜を介在させることに
よって、400℃〜500℃程度の高温条件が加わっても、良
好なはんだ付け性が得られる。(Effects of the Invention) As described above, according to the present invention, the above-mentioned plating film is interposed between a connection circuit pattern made of copper or a copper alloy and a tin plating film or a solder plating film, whereby 400 ° C to 500 ° C. Even if a high temperature condition of about ° C is applied, good solderability can be obtained.
またインナーリードに半導体素子と接合する側の片面
にのみ錫めっき皮膜あるいははんだめっき皮膜を形成す
ることによって、ボンディングツールにこれら金属が付
着せず、インナーリードのボンディングが良好に行なえ
る。Also, by forming a tin plating film or a solder plating film only on one side of the inner lead that is to be bonded to the semiconductor element, these metals do not adhere to the bonding tool, and the inner lead can be bonded well.
第１図はTABテープの断面説明図、第２図は接続回路パ
ターンの断面図を示す。 10……支持フィルム、12……インナーリード、13……ア
ウターリード、14……めっき被膜、18……第１のめっき
皮膜、20……第２のめっき皮膜、16、22……錫めっき皮
膜。FIG. 1 is a sectional explanatory view of a TAB tape, and FIG. 2 is a sectional view of a connection circuit pattern. 10 ... Support film, 12 ... Inner lead, 13 ... Outer lead, 14 ... Plating film, 18 ... First plating film, 20 ... Second plating film, 16, 22 ... Tin plating film .
───────────────────────────────────────────────────── フロントページの続き (72)発明者 若林 信一 長野県長野市大字栗田字舎利田711番地 新光電気工業株式会社内 (56)参考文献 特開 昭63−296347（ＪＰ，Ａ) 特開 昭63−65633（ＪＰ，Ａ) 特開 昭50−139671（ＪＰ，Ａ) 特開 昭59−159553（ＪＰ，Ａ) 特開 昭54−121670（ＪＰ，Ａ) 特開 平３−93245（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/60 311 H01L 23/50 ──────────────────────────────────────────────────続 き Continuation of front page (72) Inventor Shinichi Wakabayashi 711, Toshida, Kurita-sha, Nagano-shi, Nagano Pref. Shinko Electric Industries Co., Ltd. (56) References JP-A-63-65633 (JP, A) JP-A-50-139671 (JP, A) JP-A-59-159553 (JP, A) JP-A-54-121670 (JP, A) JP-A-3-93245 (JP) , A) (58) Field surveyed (Int. Cl. 6 , DB name) H01L 21/60 311 H01L 23/50
Claims (2)
が形成され、インナーリードおよびアウターリード上に
錫めっき皮膜またははんだめっき皮膜が形成されている
TABテープにおいて、 少なくともアウターリード上に、錫めっき皮膜またはは
んだめっき皮膜の下地として、ニッケル、コバルト、錫
−ニッケル合金、錫−コバルト合金、ニッケル−コバル
ト合金、錫−ニッケル−コバルト合金から選ばれる金属
による第１のめっき皮膜と、この第１のめっき皮膜上に
形成される、金、銀、白金、パラジウム、ロジウムから
選ばれる金属による第２のめっき皮膜とが形成されてい
ることを特徴とするTABテープ。A connection circuit pattern is formed of copper or a copper alloy, and a tin plating film or a solder plating film is formed on inner leads and outer leads.
In a TAB tape, a metal selected from nickel, cobalt, a tin-nickel alloy, a tin-cobalt alloy, a nickel-cobalt alloy, and a tin-nickel-cobalt alloy as a tin plating film or a solder plating film base on at least an outer lead. And a second plating film formed of a metal selected from gold, silver, platinum, palladium, and rhodium formed on the first plating film. TAB tape.
皮膜またははんだめっき皮膜が、インナーリードの半導
体素子と接合する側の片側にのみ形成されていることを
特徴とする請求項１記載のTABテープ。2. The TAB tape according to claim 1, wherein the tin plating film or the solder plating film formed on the inner lead is formed only on one side of the inner lead which is to be joined to the semiconductor element. .
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910012686A KR950008697B1 (en) | 1990-07-27 | 1991-07-24 | TAB tape |
| EP19910306787 EP0468787A3 (en) | 1990-07-27 | 1991-07-25 | Tape automated bonding in semiconductor technique |
| US08/166,620 US5384204A (en) | 1990-07-27 | 1993-12-14 | Tape automated bonding in semiconductor technique |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1-327987 | 1989-12-18 | ||
| JP32798789 | 1989-12-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03237735A JPH03237735A (en) | 1991-10-23 |
| JP2892455B2 true JP2892455B2 (en) | 1999-05-17 |
Family
ID=18205236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20018390A Expired - Fee Related JP2892455B2 (en) | 1989-12-18 | 1990-07-27 | TAB tape |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2892455B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05327187A (en) * | 1992-05-18 | 1993-12-10 | Ishihara Chem Co Ltd | Printed wiring board and manufacturing method thereof |
| JPH06350227A (en) * | 1993-06-08 | 1994-12-22 | Nec Corp | Surface treating method for printed wiring board |
| JPH0878472A (en) * | 1994-09-05 | 1996-03-22 | Hitachi Cable Ltd | Semiconductor device substrate and semiconductor device |
| JP2005264261A (en) * | 2004-03-19 | 2005-09-29 | Oriental Mekki Kk | Electronic component material |
-
1990
- 1990-07-27 JP JP20018390A patent/JP2892455B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03237735A (en) | 1991-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3300839B2 (en) | Semiconductor device and method of manufacturing and using same | |
| US5384204A (en) | Tape automated bonding in semiconductor technique | |
| JP2528617B2 (en) | Multilayer interconnect metal structure and method of forming same | |
| JP3201957B2 (en) | Metal bump, method for manufacturing metal bump, connection structure | |
| US4463059A (en) | Layered metal film structures for LSI chip carriers adapted for solder bonding and wire bonding | |
| JP3296400B2 (en) | Semiconductor device, manufacturing method thereof, and Cu lead | |
| US6444562B1 (en) | Nickel alloy films for reduced intermetallic formation in solder | |
| EP0082271A2 (en) | Methods of brazing adjoining surfaces of elements, brazing alloys, and structures comprising brazed joints | |
| JP2892455B2 (en) | TAB tape | |
| JPH11111909A (en) | Lead frame for semiconductor device | |
| JPH01257356A (en) | Lead frame for semiconductor | |
| EP0468787A2 (en) | Tape automated bonding in semiconductor technique | |
| JPH0146228B2 (en) | ||
| JP2858197B2 (en) | Lead frame for semiconductor device | |
| JPH0616522B2 (en) | Copper alloy foil for tape carrier | |
| KR950008697B1 (en) | TAB tape | |
| JP3193100B2 (en) | Semiconductor device | |
| JP2894172B2 (en) | Semiconductor device | |
| JP3072926B2 (en) | Tape carrier | |
| JPH0158863B2 (en) | ||
| JPH06260577A (en) | Coating structure of wiring electrode | |
| JPS6244545Y2 (en) | ||
| JP3110671B2 (en) | Semiconductor device | |
| JPH0529396A (en) | Tab tape | |
| JPS60143636A (en) | electronic components |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |