[go: up one dir, main page]

JP2877761B2 - Semiconductor component fixing jig - Google Patents

Semiconductor component fixing jig

Info

Publication number
JP2877761B2
JP2877761B2 JP18218396A JP18218396A JP2877761B2 JP 2877761 B2 JP2877761 B2 JP 2877761B2 JP 18218396 A JP18218396 A JP 18218396A JP 18218396 A JP18218396 A JP 18218396A JP 2877761 B2 JP2877761 B2 JP 2877761B2
Authority
JP
Japan
Prior art keywords
coating layer
semiconductor component
jig
semiconductor
fixing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP18218396A
Other languages
Japanese (ja)
Other versions
JPH1027811A (en
Inventor
幸宏 武浪
久雄 矢部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP18218396A priority Critical patent/JP2877761B2/en
Priority to KR1019970709930A priority patent/KR100324857B1/en
Priority to PCT/JP1997/002335 priority patent/WO1998001902A1/en
Priority to TW086109779A priority patent/TW354414B/en
Publication of JPH1027811A publication Critical patent/JPH1027811A/en
Application granted granted Critical
Publication of JP2877761B2 publication Critical patent/JP2877761B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve the bonding strength and abrasion resistance of coating layers, to reduce the generation and adhesion of dusts and to make it possible to mass produce a semiconductor component of good quality at a high yield of manufacture by a method wherein the coating layers containing a chromium oxide as their main component are respectively formed on the surfaces of metal base materials. SOLUTION: A blasting treatment is previously performed and bottomed cylinder-shaped attracting plates 13b using a carbon steel for machine structure use, an alloy tool steel and a stainless steel as their metal base material are respectively prepared. A process for coating a chromic acid saturated aqueous solution on the side of the surface of each attracting plate 13b and a process for firing the plates 13b at a high temperature are repeated. In such a way, a coating layer 13a having a prescribed thickness is formed on the surface of each attracting plate 13b. Thereby, the bonding strength of the coating layer is high, the insulation properties and abrasion resistance of a fixing jig are good and dusts can be prevented from being produced and from adhering. Moreover, it becomes possible to mass produce a semiconductor component of good quality at a high yield of manufacture.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は半導体製造装置等に
使用される半導体部品固定治具に係り、特に絶縁性およ
び耐摩耗性が良好で粉塵の付着が少なく、良質な半導体
部品を量産することが可能な半導体部品固定治具に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a jig for fixing a semiconductor component used in a semiconductor manufacturing apparatus and the like, and more particularly to mass-producing a high-quality semiconductor component having good insulation and abrasion resistance and little dust. The present invention relates to a jig for fixing a semiconductor component, which can be used.

【０００２】[0002]

【従来の技術】ＬＳＩ、ＩＣ、トランジスタなどの半導
体部品の製造工程においては、例えば図３に示すような
ダイボンダ装置や図６に示すようなワイヤーボンディン
グ装置が使用される。このダイボンダ装置は、半導体素
子（ペレット）をリードフレーム上に接合する装置であ
り、透明なフィルム上に貼着したウエハをカッティング
して形成した多数の半導体ペレット１を保持するウエハ
カセットリング２と、各半導体ペレット１の位置および
形状をモニタして規格に対する合否を判断する図示しな
いＴＶカメラなどのモニタ装置と、ウエハカセットリン
グ２上にある規格合格品の半導体ペレット１のみを１個
ずつ吸着し、プリアライメント３に搬送するダイ吸着用
コレット４と、プリアライメント３によって位置決めさ
れた半導体ペレット１を吸着し、吸着した半導体ペレッ
ト１をリードフレーム５上の所定位置に押し付けるダイ
ボンディング用コレット６とを備えて構成される。2. Description of the Related Art In the process of manufacturing semiconductor components such as LSIs, ICs, transistors, etc., for example, a die bonder device as shown in FIG. 3 or a wire bonding device as shown in FIG. 6 is used. This die bonder device is a device for bonding a semiconductor element (pellet) onto a lead frame, and includes a wafer cassette ring 2 for holding a large number of semiconductor pellets 1 formed by cutting a wafer stuck on a transparent film; A monitor device such as a TV camera (not shown) that monitors the position and shape of each semiconductor pellet 1 to determine whether or not the semiconductor pellet 1 conforms to the standard, and only the semiconductor pellet 1 of a standard-compliant product on the wafer cassette ring 2 are sucked one by one. It includes a die suction collet 4 to be conveyed to the pre-alignment 3 and a die bonding collet 6 for sucking the semiconductor pellet 1 positioned by the pre-alignment 3 and pressing the sucked semiconductor pellet 1 to a predetermined position on the lead frame 5. It is composed.

【０００３】またウエハカセットリング２を挟み、ダイ
吸着用コレット４と対向するように吸着筒１３が配設さ
れる。この吸着筒１３は、図４および図５に拡大して示
すように、例えば機械構造用炭素鋼（Ｓ４５Ｃ）等の鋼
材を使用して円筒キャップ状に形成され、さらに半導体
ペレット１を貼着したペレット接着フィルム８に当接す
る表面に、厚さ２〜１５μｍ程度の黒色亜鉛めっきを施
して製造される。A suction cylinder 13 is disposed so as to face the die suction collet 4 with the wafer cassette ring 2 interposed therebetween. This adsorption cylinder 13 is formed in a cylindrical cap shape using a steel material such as carbon steel for machine structure (S45C), for example, as shown in FIGS. It is manufactured by applying black zinc plating with a thickness of about 2 to 15 μm on the surface that comes into contact with the pellet adhesive film 8.

【０００４】吸着筒１３の中央部には後述する突き上げ
ピン７を挿通するためのピン挿通孔１４が穿設され、さ
らにピン挿通孔１４の周辺には、フィルム８を真空吸着
するための吸引孔１５が多数穿設されている。この吸着
筒１３は、鋼材製のスリーブ１６に嵌め込まれて使用さ
れる。A pin insertion hole 14 for inserting a push-up pin 7 to be described later is formed in the center of the suction tube 13, and a suction hole for vacuum suction of the film 8 is provided around the pin insertion hole 14. 15 are drilled. The adsorption cylinder 13 is used by being fitted into a sleeve 16 made of steel.

【０００５】ここで吸着筒１３のフィルム８への当接面
に黒色亜鉛めっきを施工する理由は次の通りである。す
なわちフィルム８上に貼着した各半導体ペレット１の位
置や形状を上記モニタ装置でモニタする際に、比較的に
明るく撮影される半導体ペレット１の背景を暗くするこ
とによって、半導体ペレット１と背景になる吸着筒１３
とのコントラストを高め、半導体ペレット１の位置およ
び形状を判別し易くするためである。Here, the reason why black zinc plating is applied to the contact surface of the adsorption cylinder 13 with the film 8 is as follows. That is, when monitoring the position and shape of each semiconductor pellet 1 stuck on the film 8 with the above-described monitor device, the background of the semiconductor pellet 1 which is relatively brightly photographed is darkened, so that Adsorption cylinder 13
This is to enhance the contrast with the semiconductor device 1 and to easily determine the position and the shape of the semiconductor pellet 1.

【０００６】また図５に示すように、フィルム８を挟み
ダイ吸着用コレット４に対向して、軸方向に昇降自在に
突き上げピン７が配設される。この突き上げピン７は、
吸着筒１３の中心軸方向に昇降自在に配設されたマンド
レル１７上に植設され、複数の半導体ペレット１を貼着
したフィルム８の背面方向から吸着筒１３のピン挿通孔
１４を通り、フィルム８に突き刺さるように運動し、フ
ィルム８上面に貼着した半導体ペレット１を剥離せし
め、その半導体ペレット１をダイ吸着用コレット４の先
端部方向に移動させる機能を有する。As shown in FIG. 5, a push-up pin 7 is provided so as to be able to move up and down in the axial direction so as to face the die suction collet 4 with the film 8 interposed therebetween. This push-up pin 7
The film is planted on a mandrel 17 which can be moved up and down in the direction of the central axis of the suction tube 13, passes through the pin insertion hole 14 of the suction tube 13 from the back side of the film 8 to which the plurality of semiconductor pellets 1 are adhered, and 8, the semiconductor pellet 1 adhered to the upper surface of the film 8 is peeled off, and the semiconductor pellet 1 is moved in the direction of the tip end of the collet 4 for die suction.

【０００７】上記ダイボンディング用コレット６および
ダイ吸着用コレット４は、耐摩耗強度を確保するため
に、一般にタングステン（Ｗ）、コバルト（Ｃｏ）など
を含有した超硬合金で円筒状に形成され、その先端部に
半導体ペレット１を吸引してくわえ込むための四角錘台
状の凹陥部９を有する。また、この凹陥部９に連通し、
半導体ペレット１を真空源に接続して真空吸引するため
の吸引孔１０が設けてある。またダイ吸着用コレット４
に対向して配設された突き上げピン７も高速度でペレッ
ト１に繰り返して接触するため、耐摩耗性に優れた前述
の超硬合金によって円柱針状に形成される。The above-mentioned die-bonding collet 6 and die-adsorbing collet 4 are generally formed of a cemented carbide containing tungsten (W), cobalt (Co) or the like in a cylindrical shape in order to secure abrasion resistance. A truncated pyramid-shaped recess 9 for sucking and holding the semiconductor pellet 1 is provided at the tip thereof. In addition, it communicates with the recess 9,
A suction hole 10 for connecting the semiconductor pellet 1 to a vacuum source and sucking the vacuum is provided. Collet 4 for die suction
Since the push-up pin 7 disposed opposite to the metal plate 1 repeatedly contacts the pellet 1 at a high speed, the push-up pin 7 is formed in a cylindrical needle shape from the above-mentioned cemented carbide having excellent wear resistance.

【０００８】このような吸着筒１３、突き上げピン７、
ダイ吸着用コレット４およびダイボンディング用コレッ
ト６は、図示しないカム装置によって上下動するリンク
によって上下方向に昇降したり水平方向に旋回運動する
ように構成されている。The suction cylinder 13, the push-up pin 7,
The die-sucking collet 4 and the die-bonding collet 6 are configured to move up and down in the vertical direction and to pivot horizontally in a link by a link that moves up and down by a cam device (not shown).

【０００９】ダイ吸着操作を実行する際には、吸着筒１
３がフィルム８の背面に当接された状態で、モニタ装置
によって各半導体ペレット１の位置および形状がチェッ
クされる。吸着筒１３の表面には黒色亜鉛めっきが施工
されているので、半導体ペレット１と、その背景になる
吸着筒１３とのコントラストが高く、モニタ装置によっ
て半導体ペレット１の輪郭が明瞭に認識される。そして
欠けなどの欠陥や異常形状を有する半導体ペレットは不
合格品と判定され、ダイボンディングの対象から除外さ
れる。When the die suction operation is performed, the suction cylinder 1
While the film 3 is in contact with the back surface of the film 8, the position and shape of each semiconductor pellet 1 are checked by the monitor device. Since black zinc plating is applied to the surface of the adsorption cylinder 13, the contrast between the semiconductor pellet 1 and the adsorption cylinder 13 as the background is high, and the outline of the semiconductor pellet 1 is clearly recognized by the monitor device. A semiconductor pellet having a defect such as a chip or an abnormal shape is determined as a rejected product and is excluded from die bonding.

【００１０】ダイ吸着用コレット４および突き上げピン
７を内蔵した吸着筒１３は、ウエハカセットリング２上
のフィルム８上面に貼着された複数のペレット１，１…
のうち、検査合格品のみを光学的に検知して、それぞれ
その上下部に移動する。そしてフィルム８の背面に当接
した吸着筒１３の内部空間が真空源に接続され、フィル
ム８と吸着筒１３との間に滞留する空気が吸引孔１５を
通り除かれる。そのため、フィルム８は吸着筒１３の外
表面に吸着固定される。次に、突き上げピン７が吸着筒
１３のピン挿通孔１４を通り上昇してフィルム８を突き
破り、ピン先端に接触した半導体ペレット１を押し上げ
て、フィルム８上面から剥離せしめる。同時にダイ吸着
用コレット４の先端部（凹陥部）が当該半導体ペレット
１上に被着される。そしてダイ吸着用コレット４は半導
体ペレット１を１個ずつ凹陥部９内に真空吸着して、図
３に示すプリアライメント３に順次搬送する。The suction cylinder 13 containing the die suction collet 4 and the push-up pin 7 is provided with a plurality of pellets 1, 1.
Among them, only the products that pass the inspection are optically detected and moved to the upper and lower portions, respectively. Then, the internal space of the suction tube 13 in contact with the back surface of the film 8 is connected to a vacuum source, and the air staying between the film 8 and the suction tube 13 is removed through the suction hole 15. Therefore, the film 8 is fixed by suction to the outer surface of the suction tube 13. Next, the push-up pin 7 rises through the pin insertion hole 14 of the suction tube 13 and breaks through the film 8, pushing up the semiconductor pellet 1 in contact with the tip of the pin and peeling the semiconductor pellet 1 from the upper surface of the film 8. At the same time, the tip (recess) of the collet 4 for die suction is attached on the semiconductor pellet 1. Then, the die suction collet 4 vacuum-adsorbs the semiconductor pellets 1 one by one into the recessed portions 9 and sequentially transports the semiconductor pellets 1 to the pre-alignment 3 shown in FIG.

【００１１】プリアライメント３は搬送された半導体ペ
レット１の位置決めを行なう。位置決めされた半導体ペ
レット１はダイボンディング用コレット６の先端部に真
空吸着された状態で搬送され、リードフレーム５の所定
位置に載置される。そしてコレット６はスクラブモーシ
ョンを半導体ペレット１に付加するため、半導体ペレッ
ト１は強い押圧力を受ける。リードフレーム５の表面に
は予め接合用のハンダが塗布されているため、半導体ペ
レット１はリードフレーム５上に一体に接合される。The pre-alignment 3 positions the transported semiconductor pellet 1. The positioned semiconductor pellet 1 is conveyed while being vacuum-sucked to the tip of the die bonding collet 6, and is placed at a predetermined position on the lead frame 5. Since the collet 6 applies a scrub motion to the semiconductor pellet 1, the semiconductor pellet 1 receives a strong pressing force. Since the solder for joining is applied to the surface of the lead frame 5 in advance, the semiconductor pellet 1 is integrally joined on the lead frame 5.

【００１２】次に半導体ペレット１の各電極部とリード
フレーム５のリード５ａとを、図６に示すようなワイヤ
ーボンディング装置２０を使用して電気的にワイヤーで
接続する。このワイヤーボンディング装置２０は、金
（Ａｕ）やアルミニウム（Ａｌ）などの導電性材料から
成るボンディングワイヤー２１を挿通保持するワイヤー
ボンディングキャピラリ２２を備え、このキャピラリ２
２は、図示しないボンディングヘッドによりＸＹＺ方向
に移動自在となるように構成されている。またボンディ
ングヘッドには、放電電極２３がその放電部２３ａがキ
ャピラリ２２の直下に対して進退自在に付設される。ま
たリードフレーム５を押圧固定するための金属製のリー
ドフレーム押え２４が設けられ、このリードフレーム押
え２４は駆動手段２５によって昇降動するように構成さ
れる。このリードフレーム押え２４は、中央部に半導体
ペレット１およびリードフレーム５のリード５ａとを包
囲可能な開口部２６を有する平板状の導電部材であり、
下降時にヒータブロックなどのボンディングステージ２
７との間でリードフレーム５を挟持し所定位置に固定す
る。Next, the respective electrode portions of the semiconductor pellet 1 and the leads 5a of the lead frame 5 are electrically connected by wires using a wire bonding apparatus 20 as shown in FIG. The wire bonding apparatus 20 includes a wire bonding capillary 22 for inserting and holding a bonding wire 21 made of a conductive material such as gold (Au) or aluminum (Al).
Reference numeral 2 is configured to be movable in the XYZ directions by a bonding head (not shown). In the bonding head, a discharge electrode 23 is provided so that a discharge portion 23a thereof can move forward and backward directly below the capillary 22. Further, a metal lead frame retainer 24 for pressing and fixing the lead frame 5 is provided, and the lead frame retainer 24 is configured to be moved up and down by driving means 25. The lead frame retainer 24 is a flat plate-shaped conductive member having an opening 26 in the center portion capable of surrounding the semiconductor pellet 1 and the lead 5a of the lead frame 5,
Bonding stage 2 such as heater block when descending
7, the lead frame 5 is sandwiched and fixed at a predetermined position.

【００１３】上記ワイヤーボンディング装置２０は以下
のように動作する。すなわち、リードフレーム５がボン
ディングステージ２７に搬入されると、リードフレーム
押え２４が駆動手段２５によって下降し、リードフレー
ム５はリードフレーム押え２４とボンディングステージ
２７との間に挟持固定される。次に放電電極２３が移動
し、その放電部２３ａがキャピラリ２２の直下になるよ
うに位置決めされ、両者間での放電によりキャピラリ２
２から導出されているボンディングワイヤー２１の自由
端にボール（ネイルヘッド）２１ａが形成される。しか
る後に、図示しないボンディングヘッドによりキャピラ
リ２２が移動制御され、半導体ペレット１上の電極とリ
ード５ａとの間がボンディングワイヤー２１によって電
気的に接続される。そして搬送ライン上の１個の半導体
ペレット１についてのボンディング操作が完了すると、
リードフレーム押え２４は上昇し、リードフレーム５が
所定量搬送されて次の半導体ペレットについてのボンデ
ィング操作が同様に繰り返される。The wire bonding apparatus 20 operates as follows. That is, when the lead frame 5 is carried into the bonding stage 27, the lead frame presser 24 is lowered by the driving means 25, and the lead frame 5 is clamped and fixed between the lead frame presser 24 and the bonding stage 27. Next, the discharge electrode 23 moves, and the discharge portion 23a is positioned so as to be directly below the capillary 22, and the discharge between the two causes the capillary 2 to move.
A ball (nail head) 21a is formed at the free end of the bonding wire 21 led out from 2. Thereafter, the movement of the capillary 22 is controlled by a bonding head (not shown), and the electrode on the semiconductor pellet 1 and the lead 5 a are electrically connected by the bonding wire 21. When the bonding operation for one semiconductor pellet 1 on the transport line is completed,
The lead frame presser 24 is raised, the lead frame 5 is transported by a predetermined amount, and the bonding operation for the next semiconductor pellet is repeated in the same manner.

【００１４】[0014]

【発明が解決しようとする課題】しかしながら、従来の
機械構造用炭素鋼（Ｓ４５Ｃ）で形成し、表面に黒色亜
鉛めっきを施工した吸着筒などの半導体部品固定治具を
装着したダイボンダ装置においては、吸着筒の耐摩耗強
度が低いため、半導体ペレット接合体などの半導体部品
の製造歩留りが低下したり、製造装置の保守管理が煩雑
になる欠点があった。However, in a conventional die bonder device equipped with a semiconductor component fixing jig such as an adsorption cylinder formed of carbon steel for machine structural use (S45C) and coated with black zinc plating on the surface thereof, Since the abrasion resistance of the adsorption cylinder is low, there are disadvantages that the production yield of semiconductor parts such as a semiconductor pellet joint is reduced and that the maintenance management of the production apparatus becomes complicated.

【００１５】すなわち高速度でダイボンディング動作を
繰り返す毎にペレットを貼着したフィルムと吸着筒上面
とが摺動するため、吸着筒表面の黒色亜鉛めっきが摩耗
したり剥離し易く、モニタ時における黒色背景が得られ
なくなる。その結果、モニタ装置による半導体ペレット
の位置および形状確認に際し、認識ミスが発生し易くな
り、製品の不良率が急増するおそれがある。そのため短
い運転期間において、高い頻度で吸着筒を交換する必要
があった。このように吸着筒を交換するたびにダイボン
ダ装置を停止するために長期間に渡る連続運転が困難で
あり、装置の保守管理に要する労力も増大する問題点が
あった。That is, every time the die bonding operation is repeated at a high speed, the film on which the pellet is adhered slides on the upper surface of the adsorption cylinder, so that the black zinc plating on the adsorption cylinder surface is easily worn or peeled off, and the black color during monitoring is black. The background cannot be obtained. As a result, when the position and shape of the semiconductor pellet are confirmed by the monitor device, recognition errors are likely to occur, and the defective rate of the product may increase rapidly. Therefore, in a short operation period, it is necessary to replace the adsorption cylinder with high frequency. As described above, since the die bonder device is stopped every time the adsorption cylinder is replaced, continuous operation for a long period of time is difficult, and there is a problem that the labor required for maintenance and management of the device also increases.

【００１６】一方、従来のリードフレーム押えを固定治
具として使用したワイヤーボンディング装置において
は、リードフレーム押えが金属などの導電性材料で形成
されていたため、放電電極とリードフレーム押えとの間
に十分な絶縁距離が確保できない場合に、放電電極とワ
イヤーとの間で発生すべき放電が、放電電極とリードフ
レームとの間で生じてしまう現象が多発する問題点があ
った。このような現象が生じると、ボンディングワイヤ
ーの自由端に接合用のボールが形成されないため、ボン
ディング不良が生じ安定したボンディング作業が実施で
きない問題点があった。On the other hand, in a conventional wire bonding apparatus using a lead frame retainer as a fixing jig, the lead frame retainer is formed of a conductive material such as a metal, so that there is sufficient space between the discharge electrode and the lead frame retainer. When a sufficient insulation distance cannot be ensured, there is a problem that a phenomenon that a discharge to be generated between the discharge electrode and the wire frequently occurs between the discharge electrode and the lead frame. When such a phenomenon occurs, a bonding ball is not formed at the free end of the bonding wire, so that there is a problem that a bonding failure occurs and a stable bonding operation cannot be performed.

【００１７】上記のような不具合を低減する対策とし
て、例えば特開平７−７８８４３号公報に開示されるよ
うにリードフレーム押え本体表面にセラミックス，耐熱
性硬質ゴム，耐熱性プラスチック，カーボンから成る絶
縁性被膜を形成したリードフレーム押えが実用化されて
いる。しかしながら、これらの絶縁性被膜はいずれも粗
大な粒子から構成されており、耐摩耗強度および絶縁性
が不十分であるとともに、発塵性が高く、粉塵の付着に
よる半導体部品の劣化を招き易い問題点があった。As a countermeasure to reduce the above-mentioned inconveniences, for example, as disclosed in Japanese Patent Application Laid-Open No. 7-78843, the surface of a lead frame presser main body has an insulating material made of ceramics, heat-resistant hard rubber, heat-resistant plastic, and carbon. Lead frame retainers with a coating formed have been put to practical use. However, all of these insulating coatings are composed of coarse particles, have insufficient wear resistance and insulation properties, have high dusting properties, and are liable to cause deterioration of semiconductor components due to dust adhesion. There was a point.

【００１８】本発明は上記の問題点を解決するためにな
されたものであり、被覆層の接合強度および耐摩耗性が
良好であり、粉塵の発生付着を低減でき、良質な半導体
部品を高い製造歩留りで量産することが可能な半導体部
品固定治具を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has good bonding strength and abrasion resistance of a coating layer, can reduce generation and adhesion of dust, and can produce high quality semiconductor parts with high quality. An object of the present invention is to provide a semiconductor component fixing jig that can be mass-produced with a high yield.

【００１９】[0019]

【課題を解決するための手段】上記目的を達成するため
本発明に係る半導体部品固定治具は、金属母材表面にク
ロム酸化物を主成分とする被覆層が形成されていること
を特徴とする。In order to achieve the above object, a semiconductor component fixing jig according to the present invention is characterized in that a coating layer mainly composed of chromium oxide is formed on the surface of a metal base material. I do.

【００２０】またクロム酸化物が酸化第二クロム（Ｃｒ
2 Ｏ3 ）であることを特徴とする。さらにクロム酸化物
は、平均粒径が０．１〜０．５μｍの酸化第二クロム
（Ｃｒ2 Ｏ3 ）微粒子であることを特徴とする。またこ
のクム酸化物を主成分とする被覆層は深い暗緑色を呈し
ている。Chromium oxide is chromic oxide (Cr)
2 O 3 ). Furthermore chromium oxide, wherein the average particle size of chromic oxide of 0.1~0.5μm (Cr 2 O 3) is particulate. Further, the coating layer mainly composed of the kum oxide has a deep dark green color.

【００２１】さらに被覆層は、表面粗さが最大高さ（Ｒ
max ）基準で５μｍ以上である金属母材表面に形成する
ことが好ましい。具体的には、被覆層を形成する前に、
金属母材表面をブラスト処理等によりＲmax 基準で５μ
ｍ以上となるように粗くし、この後に被覆層を形成す
る。このように金属母材表面をＲmax 基準で５μｍ以上
と粗くすることにより、被覆層との接合強度を高めると
同時に、被覆層形成後の半導体部品固定治具の表面粗さ
をも粗くすることができる。但し、Ｒmax 基準での表面
粗さが１０μｍを超えると被覆層を均一に形成しにくく
なるため、１０μｍ以下であることが好ましい。Further, the coating layer has a maximum surface roughness (R
max) is preferably formed on the surface of a metal base material having a size of 5 μm or more on a standard basis. Specifically, before forming the coating layer,
The metal base material surface is 5μ based on Rmax by blasting etc.
m, and then a coating layer is formed. By thus roughening the surface of the metal base material to 5 μm or more based on Rmax, it is possible to increase the bonding strength with the coating layer and at the same time to roughen the surface roughness of the semiconductor component fixing jig after the formation of the coating layer. it can. However, if the surface roughness on the basis of Rmax exceeds 10 μm, it becomes difficult to form a coating layer uniformly, so that it is preferably 10 μm or less.

【００２２】ここで詳細には、金属母材が鉄系金属であ
る場合、金属母材とクロム酸化物を主成分とする被覆層
との間に、鉄化合物とクロム酸化物との反応層を形成す
ることが好ましい。この反応層の形成により、クロム酸
化物を主成分とする被覆層との接合強度をさらに強固な
ものとすることができる。なお、本発明での“金属母材
表面にクロム酸化物を主成分とする被覆層が形成されて
いる”とは、この反応層を介して形成されていても本発
明の範囲内であることは言うまでもない。また金属母材
表面には、界面が明確か否かは別として実質的には反応
層と、クロム酸化物を主成分とする被覆層との二層の被
覆層が形成されていることとなる。More specifically, when the metal base material is an iron-based metal, a reaction layer of an iron compound and chromium oxide is provided between the metal base material and the coating layer containing chromium oxide as a main component. Preferably, it is formed. By forming this reaction layer, the bonding strength with the coating layer containing chromium oxide as a main component can be further increased. In the present invention, "the coating layer mainly composed of chromium oxide is formed on the surface of the metal base material" means that even if the coating layer is formed via the reaction layer, it is within the scope of the present invention. Needless to say. In addition, apart from whether the interface is clear or not, a two-layer coating layer of a reaction layer and a coating layer mainly composed of chromium oxide is formed on the surface of the metal base material. .

【００２３】上記半導体部品固定治具は、半導体素子を
接合するリードフレームを押圧固定するためのリードフ
レーム押えや半導体素子を吸着により固定する吸着筒と
して好適である。The semiconductor component fixing jig is suitable as a lead frame holder for pressing and fixing a lead frame to which a semiconductor element is joined, or as a suction cylinder for fixing a semiconductor element by suction.

【００２４】ここで金属母材としては、特に限定され
ず、汎用の構造用鋼材やステンレス鋼などの耐食耐熱鋼
や各種鉄系合金，炭素鋼，チタン合金，アルミニウム合
金，インコネル等が使用できる。Here, the metal base material is not particularly limited, and general-purpose structural steel materials, corrosion-resistant heat-resistant steels such as stainless steel, various iron-based alloys, carbon steels, titanium alloys, aluminum alloys, Inconel and the like can be used.

【００２５】また、上記クロム酸化物を主成分とする被
覆層は、例えば以下のような手順で形成することができ
る。すなわち、クロム酸（ＣｒＯ3 ）水溶液またはスラ
リー（泥漿）を予め表面処理した鉄系金属等の金属母材
表面に塗布したり、浸漬したりすることによって金属母
材表面にクロム酸水溶液またはスラリーを付着させる。
次に４００〜６００℃程度の低温度で加熱焼成すること
により水分が蒸発すると同時に、酸化クロムと金属母材
の表層とが化学反応して生成した反応層と、平均粒径が
０．１〜０．５μｍの微粒子からなるクロム酸化物（酸
化第二クロム：Ｃｒ2 Ｏ3 ）を主成分とする被覆層が形
成される。The coating layer containing chromium oxide as a main component can be formed, for example, by the following procedure. In other words, a chromic acid (CrO 3 ) aqueous solution or slurry (slurry) is applied to a surface of a metal base material such as an iron-based metal that has been subjected to surface treatment in advance, or is immersed in the chromic acid aqueous solution or slurry. Attach.
Next, by heating and baking at a low temperature of about 400 to 600 ° C., moisture is evaporated, and at the same time, a reaction layer formed by a chemical reaction between chromium oxide and the surface layer of the metal base material has an average particle diameter of 0.1 to A coating layer mainly composed of chromium oxide (chromic oxide: Cr 2 O 3 ) composed of 0.5 μm fine particles is formed.

【００２６】これら被覆層の厚さは、反応層とクロム酸
化物を主成分とする被覆層とを合計して１〜５μｍが望
ましい。被覆層の厚さが１μｍ未満の場合は、固定治具
の絶縁性および耐摩耗性が低下する。反応層とクロム酸
化物を主成分とする被覆層とが、後述するようなセラミ
ックス微細粒子やフレークを添加・含有されていない場
合には、被覆層が５μｍを超えると、逆に被覆層厚の均
一性が損われ、密着性，接合強度も低下してしまう。同
様な理由によりさらに１〜３μｍの範囲が好ましい。The total thickness of these coating layers is preferably 1 to 5 μm in total for the reaction layer and the coating layer containing chromium oxide as a main component. If the thickness of the coating layer is less than 1 μm, the insulation and abrasion resistance of the fixing jig decrease. When the reaction layer and the coating layer mainly composed of chromium oxide do not contain or contain ceramic fine particles or flakes as described below, if the coating layer exceeds 5 μm, the coating layer thickness Uniformity is impaired, and adhesion and bonding strength are also reduced. For the same reason, the range of 1 to 3 μm is more preferable.

【００２７】一方、クロム酸（Ｃｒ2 Ｏ3 ）水溶液中に
アルミナ（Ａｌ2 Ｏ3 ），シリカ（ＳｉＯ2 ），ＺｎＯ
2 などのセラミックス微細粒子やフレークを添加するこ
とにより被覆層の特性（接合強度，表面硬さ）を一段と
向上させることができる。具体的には、金属母材表面に
形成される被覆層（反応層とクロム酸化物を主成分とす
る被覆層）が前記セラミックス微細粒子，フレークを３
０〜５０ｗｔ％含有することになるように添加量を調整
することが望ましい。但し、このようにＡｌ2Ｏ3 など
のセラミックス微細粒子，フレークを添加した場合に
は、被覆層の厚さは１５〜８０μｍの範囲が好ましい。On the other hand, in a chromic acid (Cr 2 O 3 ) aqueous solution, alumina (Al 2 O 3 ), silica (SiO 2 ), ZnO
By adding ceramic fine particles or flakes such as 2, the properties (bonding strength, surface hardness) of the coating layer can be further improved. Specifically, a coating layer (a reaction layer and a coating layer containing chromium oxide as a main component) formed on the surface of the metal base material is formed of the ceramic fine particles and flakes by 3%.
It is desirable to adjust the addition amount so as to contain 0 to 50 wt%. However, when ceramic fine particles such as Al 2 O 3 and flakes are added, the thickness of the coating layer is preferably in the range of 15 to 80 μm.

【００２８】上記被覆層の厚さが１５μｍ未満では、接
合強度を向上させる効果に乏しく、また逆に８０μｍを
超えるとクロム酸化物（およびセラミックス微細粒子，
フレーク）を主成分とする被覆層自身の強度が弱くなる
ため、最終的に密着強度，接合強度が低下することとな
るためである。同様の理由により、さらに２０〜６０μ
ｍの範囲が望ましい。If the thickness of the coating layer is less than 15 μm, the effect of improving the bonding strength is poor, and if it exceeds 80 μm, chromium oxide (and ceramic fine particles,
This is because the strength of the coating layer itself containing flakes as a main component is weakened, and the adhesion strength and the bonding strength are eventually reduced. For the same reason, another 20 to 60 μm
The range of m is desirable.

【００２９】このようにセラミックス微細粒子等を含有
する被覆層は、上記のほか以下のような製法によって形
成してもよい。すなわち、セラミックス微細粒子を含有
する水溶液またはスラリーを母材金属表面に塗布して温
度５００〜６００℃に加熱焼成して多孔質のセラミック
ス層を形成した後に、クロム酸（ＣｒＯ3 ）水溶液また
はスラリーをセラミックス層に含浸させて温度５００〜
６００℃で加熱焼結して形成してもよい。The coating layer containing the ceramic fine particles may be formed by the following method in addition to the above. That is, an aqueous solution or slurry containing fine ceramic particles is applied to the surface of a base metal, heated and fired at a temperature of 500 to 600 ° C. to form a porous ceramic layer, and then a chromic acid (CrO 3 ) aqueous solution or slurry is applied. Impregnated in ceramic layer, temperature 500 ~
It may be formed by sintering at 600 ° C.

【００３０】なお、上記原料液の塗布・含浸操作および
焼結操作が１回のみである場合には被覆層内に微小な気
孔が残存し易いため、通常は上記水溶液の塗布・含浸操
作および焼成操作を１０回程度繰り返すとよい。被覆層
の厚さは上記塗布・含浸操作および焼成操作の繰り返し
回数を制御することによって調整できる。In the case where the application / impregnation operation and the sintering operation of the raw material liquid are performed only once, fine pores are likely to remain in the coating layer. The operation may be repeated about 10 times. The thickness of the coating layer can be adjusted by controlling the number of repetitions of the application / impregnation operation and the baking operation.

【００３１】上記のように成形した被覆層は、金属母材
に対して高い接合強度を有し、高硬度，無気孔で耐摩耗
性，低摩擦性，耐熱性などに優れている。ちなみにステ
ンレス鋼を金属母材とした場合の表面硬さは、やや金属
母材の硬さの影響を受け５００〜６００Ｈｖ（０．１）
である一方、骨材を含有する厚い被覆層の表面硬さは１
５００〜２０００Ｈｖ（０．１）と高く、超硬合金と同
程度の硬度が得られる。The coating layer formed as described above has a high bonding strength to the metal base material, and is excellent in high hardness, no pores, abrasion resistance, low friction property, heat resistance and the like. Incidentally, the surface hardness when stainless steel is used as the metal base material is slightly affected by the hardness of the metal base material, and is 500 to 600 Hv (0.1).
On the other hand, the surface hardness of the thick coating layer containing the aggregate is 1
The hardness is as high as 500 to 2000 Hv (0.1), and the same hardness as a cemented carbide can be obtained.

【００３２】また特に鉄系の金属母材を使用した場合に
は、被覆層と金属母材との境界に、酸化クロムと金属
（鉄）とが化学反応して反応層が生成され、この反応層
の存在によって両者の接合強度が７００kgf/cm2 （６８
ＭＰａ）以上となる。In particular, when an iron-based metal base material is used, chromium oxide and metal (iron) undergo a chemical reaction at the boundary between the coating layer and the metal base material to form a reaction layer. Due to the presence of the layer, the joint strength between the two is 700 kgf / cm 2 (68 kgf / cm 2 ).
MPa) or more.

【００３３】さらに被覆層を構成するクロム酸化物（Ｃ
ｒ2 Ｏ3 ）微粒子の平均粒径が０．１〜０．５μｍ程度
と超微細であるため、固体潤滑剤としての作用が強い。
そのため、表面粗さ（Ｒmax ）は多少大きくても摩擦係
数が小さくなり摺動特性を高める効果も顕著である。特
に水溶液から析出させて被覆層を形成しているため、構
成粒子が超微細であり、従来の溶射法よって形成した多
孔質セラミックス被膜と異なり耐食性や耐摩耗性が不足
することはない。Further, the chromium oxide (C
Since the average particle size of r 2 O 3) fine particles are 0.1~0.5μm about and ultrafine, strong action as a solid lubricant.
Therefore, even if the surface roughness (Rmax) is somewhat large, the coefficient of friction becomes small, and the effect of improving the sliding characteristics is remarkable. In particular, since the coating layer is formed by precipitation from an aqueous solution, the constituent particles are ultrafine, and unlike a porous ceramic coating formed by a conventional thermal spraying method, corrosion resistance and wear resistance do not become insufficient.

【００３４】また被覆層の表面部が緻密に形成されるた
め耐熱性および耐熱衝撃性に優れ、繰り返しの熱サイク
ルが半導体部品固定治具に作用した場合においても、被
覆層の剥離を引き起こすことが少なく、剥離による発塵
も少ない。Further, since the surface portion of the coating layer is densely formed, the coating layer is excellent in heat resistance and thermal shock resistance. Even when a repeated heat cycle acts on the jig for fixing semiconductor parts, the coating layer may be peeled off. Less dusting due to peeling.

【００３５】さらに被覆層は、硫酸などの酸性溶液、ア
ンモニア水などの塩基性溶液およびアルコール，アセト
ン，ガソリンなどの有機溶剤に対しても優れた耐食性を
有しており、過酷な雰囲気下においても優れた耐久性を
有している。Furthermore, the coating layer has excellent corrosion resistance to acidic solutions such as sulfuric acid, basic solutions such as aqueous ammonia, and organic solvents such as alcohol, acetone and gasoline. Has excellent durability.

【００３６】このように被覆層を形成することにより、
金属母材の機能を大幅に高めることができ、特にダイボ
ンダ装置の吸着筒やワイヤーボンディング装置のリード
フレーム押え等の半導体部品固定治具の構成材として使
用した場合に優れた効果が発揮される。By forming the coating layer as described above,
The function of the metal base material can be greatly enhanced, and an excellent effect is exhibited particularly when the metal base material is used as a component of a jig for fixing a semiconductor component such as a suction tube of a die bonder device or a lead frame holder of a wire bonding device.

【００３７】また被覆層は暗緑色を呈しているため、半
導体部品固定治具を前記ダイボンダ装置の吸着筒として
使用した場合には、半導体素子と、その背景部となる吸
着筒とのコントラストが高くなり、ＴＶカメラなどのモ
ニタ装置によって半導体素子の形状および位置が明瞭に
認識される。したがって、モニタ装置による半導体素子
の認識ミスが減少し、半導体部品を高い精度で組み立て
ることができる。Further, since the coating layer has a dark green color, when the semiconductor component fixing jig is used as the suction tube of the die bonder, the contrast between the semiconductor element and the suction tube serving as the background thereof is high. That is, the shape and position of the semiconductor element are clearly recognized by a monitor device such as a TV camera. Therefore, the recognition error of the semiconductor element by the monitor device is reduced, and the semiconductor component can be assembled with high accuracy.

【００３８】ここで本発明に係る半導体部品固定治具の
金属母材自体に表面粗さを調整する処理をせずに被覆層
を形成すると、被覆層は超微細なクロム酸化物粒子から
緻密に構成されているため、固着治具の表面粗さも金属
母材の表面粗さと同様に、Ｒmax 基準で１〜２μｍ、と
平滑な表面となってしまう。Here, when the coating layer is formed on the metal base material itself of the semiconductor component fixing jig according to the present invention without performing a treatment for adjusting the surface roughness, the coating layer is formed from ultra-fine chromium oxide particles in a dense manner. Because of the configuration, the surface roughness of the fixing jig is as smooth as 1-2 μm on the basis of Rmax, similarly to the surface roughness of the metal base material.

【００３９】そこで、本発明の半導体部品固定治具は予
め金属母材自体にブラスト処理などの目荒し処理を行な
って金属母材自体の表面粗さ（Ｒmax ）を５．０μｍ以
上とした上で被覆層を形成することが望ましい。金属母
材の表面粗さを予め調整することにより、被覆層を形成
した本発明の半導体部品固定治具の表面粗さ（Ｒmax）
は３〜５μｍで、しかも均一な被覆層厚さとすることが
でき、接合強度の向上の他、使用時に半導体製造装置内
において発生した粉塵、埃等を、製品である半導体部品
側に付着させずに固定治具側に付着させることが可能と
なる。したがって、製品である半導体部品の粉塵等によ
る汚染を効果的に防止でき、高品質の半導体部品を高い
製造歩留りで量産することができる。Therefore, the jig for fixing a semiconductor component according to the present invention performs a roughening treatment such as a blast treatment on the metal base material itself in advance to make the surface roughness (Rmax) of the metal base material itself 5.0 μm or more. It is desirable to form a coating layer. By adjusting the surface roughness of the metal base material in advance, the surface roughness (Rmax) of the semiconductor component fixing jig of the present invention having the coating layer formed thereon
Can be 3 to 5 μm and can have a uniform coating layer thickness. In addition to improving the bonding strength, it also prevents dust and dirt generated in the semiconductor manufacturing equipment during use from adhering to the semiconductor component side as a product. Can be attached to the fixing jig side. Therefore, contamination of the product semiconductor component due to dust or the like can be effectively prevented, and high-quality semiconductor components can be mass-produced with a high production yield.

【００４０】上記構成に係る半導体部品固定治具によれ
ば、超微細なクロム酸化物粒子から成る被覆層が金属母
材表面に形成されているため、固定治具の絶縁性および
耐摩耗性が良好であり、かつ粉塵の発生・付着を防止す
ることができる。したがって、この固定治具をダイボン
ダ装置の吸着筒やワイヤーボンディング装置のリードフ
レーム押えとして使用した場合に不良が少なく良質な半
導体部品を高い製造歩留りで量産することが可能にな
る。According to the jig for fixing a semiconductor component according to the above configuration, since the coating layer composed of ultrafine chromium oxide particles is formed on the surface of the metal base material, the insulation and abrasion resistance of the jig are reduced. It is good and can prevent generation and adhesion of dust. Therefore, when this fixing jig is used as a suction cylinder of a die bonder device or a lead frame holder of a wire bonding device, it becomes possible to mass-produce high-quality semiconductor components with few defects with high production yield.

【００４１】[0041]

【発明の実施の形態】次に本発明の実施形態について添
付図面を参照して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the accompanying drawings.

【００４２】実施例１〜５ 表１および図１に示すように、予めブラスト処理を行な
い表面粗さ（Ｒmax ）を７〜８μｍとした機械構造用炭
素鋼（Ｓ４５Ｃ），合金工具鋼（ＳＫＤ）およびステン
レス鋼（ＳＵＳ３０４）を金属母材とする有底円筒状の
吸着プレート１３ｂをそれぞれ調製し、各吸着プレート
１３ｂ表面側にクロム酸（ＣｒＯ3 ）飽和水溶液（実施
例によりＳｉＯ2 等の微細粒子を添加）を塗布する工程
と、温度５００℃で焼成する工程とを繰り返すことによ
り、各吸着プレート１３ｂの表面に、表１に示す厚さを
有する被覆層１３ａを形成した。その結果、表１に示す
実施例１〜５に係る半導体部品固定治具としての吸着筒
１３Ａを調整した。各吸着筒１３ＡをＳ４５Ｃ製の円筒
状スリーブ１６Ａの上端開口部に嵌め込むことにより、
図４に示す形状を有する吸着筒が形成される。なお吸着
筒１３Ａと円筒状スリーブ１６Ａを予め一体に形成して
もよい。 Examples 1 to 5 As shown in Table 1 and FIG. 1, carbon steel for machine structural use (S45C) and alloy tool steel (SKD) which had been previously blasted and had a surface roughness (Rmax) of 7 to 8 μm. And stainless steel (SUS304) as a metal base material, respectively, to prepare a bottomed cylindrical adsorption plate 13b. A saturated aqueous solution of chromic acid (CrO 3 ) (fine particles such as SiO 2 according to the embodiment) is provided on the surface side of each adsorption plate 13b. Was repeated and the step of baking at a temperature of 500 ° C. was repeated to form a coating layer 13a having a thickness shown in Table 1 on the surface of each adsorption plate 13b. As a result, the suction cylinder 13A as a semiconductor component fixing jig according to Examples 1 to 5 shown in Table 1 was adjusted. By fitting each suction tube 13A into the upper end opening of the cylindrical sleeve 16A made of S45C,
An adsorption cylinder having the shape shown in FIG. 4 is formed. Note that the suction cylinder 13A and the cylindrical sleeve 16A may be integrally formed in advance.

【００４３】比較例１ 一方比較例１として、従来材料である機械構造用炭素鋼
（Ｓ４５Ｃ）を機械研削加工して実施例１と同一寸法を
有する円筒キャップ状の吸着筒素体を形成し、その素体
のフィルム当接側表面に厚さ１０μｍの亜鉛めっきを施
工してＳ４５Ｃ製の吸着筒を多数用意した。 Comparative Example 1 On the other hand, as Comparative Example 1, a carbon steel for machine structure (S45C), which is a conventional material, was mechanically ground to form a cylindrical cap-shaped adsorption cylinder body having the same dimensions as in Example 1. A large number of S45C adsorption cylinders were prepared by applying zinc plating with a thickness of 10 μm to the film contacting surface of the element body.

【００４４】そして実施例１〜５および比較例１におい
て調製した各吸着筒の被覆層の接合強度（ピール強度）
を測定すると共に、図１に示すダイボンダ装置の吸着筒
１３Ａとして装着し、１辺が０．３５mmのＳｉペレット
とリードフレームとの接合作業を連続的に１００万回実
施した後における各吸着筒のフィルム当接部の摺動によ
る平均摩耗量を測定し、下記表１に示す結果を得た。The bonding strength (peel strength) of the coating layer of each adsorption cylinder prepared in Examples 1 to 5 and Comparative Example 1
Was measured and attached as a suction tube 13A of the die bonder device shown in FIG. 1 to perform a joining operation between a lead frame and a Si pellet having a side of 0.35 mm continuously 1 million times. The average amount of abrasion caused by sliding of the film contact portion was measured, and the results shown in Table 1 below were obtained.

【００４５】[0045]

【表１】 [Table 1]

【００４６】表１に示す結果から明らかなように、実施
例１〜５に係る半導体部品固定治具としての吸着筒によ
れば、従来材を使用した比較例１の吸着筒と比較して接
合強度が高く、摩耗量も少なく、寿命が大幅に延伸され
る。また、モニタ装置における半導体ペレットの認識ミ
ス発生率も大幅に低減されるため、製品歩留りを大幅に
向上させることができる。As is evident from the results shown in Table 1, according to the suction tube as the semiconductor component fixing jig according to Examples 1 to 5, the bonding tube was compared with the suction tube of Comparative Example 1 using the conventional material. High strength, low wear and long life. In addition, the rate of occurrence of semiconductor pellet recognition errors in the monitor device is significantly reduced, so that the product yield can be significantly improved.

【００４７】また各吸着筒の耐摩耗性が優れ寿命が延伸
される結果、吸着筒を交換するためにダイボンダ装置を
高頻度で停止する必要がなくなり、長期間にわたって装
置を連続的に運転することが可能となり、装置の保守管
理を大幅に簡素化し、半導体等の製造効率を大幅に改善
することができる。In addition, as a result of the excellent wear resistance of each adsorption cylinder and the extension of the service life, it is not necessary to frequently stop the die bonder device for replacing the adsorption cylinder, and the apparatus can be operated continuously for a long period of time. This makes it possible to greatly simplify the maintenance and management of the apparatus and to greatly improve the efficiency of manufacturing semiconductors and the like.

【００４８】次に本発明に係る半導体部品固定治具をワ
イヤーボンディング装置のリードフレーム押えに適用し
た実施例について説明する。Next, an embodiment in which the semiconductor component fixing jig according to the present invention is applied to a lead frame holder of a wire bonding apparatus will be described.

【００４９】実施例６〜１０ 表２および図２に示すように、予めブラスト処理を行な
い表面粗さ（Ｒmax ）を７〜８μｍとした機械構造用炭
素鋼（Ｓ４５Ｃ），合金工具鋼（ＳＫＤ）およびステン
レス鋼（ＳＵＳ３０４）を金属母材２８とし、ワイヤー
ボンディング操作用の開口部２６を有するリードフレー
ム押え本体を調製した。次に、各リードフレーム押え本
体表面にクロム酸（ＣｒＯ3 ）飽和水溶液（実施例７〜
９においてはセラミックス粒子を含む。）を塗布する工
程と、温度５００℃で焼成する工程とを繰り返すことに
より、表２に示す厚さを有し、ＣｒＯ3 から成る被覆層
２９を形成した。その結果、図２に示すような実施例６
〜１０に係る半導体部品固定治具としてのリードフレー
ム押え２４ａをそれぞれ製造した。 Examples 6 to 10 As shown in Table 2 and FIG. 2, carbon steel for machine structural use (S45C) and alloy tool steel (SKD) which had been previously blasted and had a surface roughness (Rmax) of 7 to 8 μm. A lead frame press main body having an opening 26 for wire bonding operation was prepared using a metal base material 28 of stainless steel (SUS304). Next, a chromic acid (CrO 3 ) saturated aqueous solution (Examples 7 to 7)
9 includes ceramic particles. ) And the step of baking at a temperature of 500 ° C. were repeated to form a coating layer 29 having a thickness shown in Table 2 and made of CrO 3 . As a result, Example 6 as shown in FIG.
The lead frame holders 24a as the semiconductor component fixing jigs according to Nos. 10 to 10 were respectively manufactured.

【００５０】比較例２ Ｃｒ2 Ｏ3 から成る被覆層２９に代えて厚さ１０μｍの
亜鉛めっき層を被覆層として形成した以外は実施例６と
同一条件で処理して比較例２に係る半導体部品固定治具
としてのリードフレーム押えを製造した。The semiconductor component according to Comparative Example 2 Cr 2 a O 3 galvanized layer having a thickness of 10μm in place of the coating layer 29 made of except for forming a coating layer is treated under the same conditions as in Example 6 Comparative Example 2 A lead frame holder as a fixing jig was manufactured.

【００５１】そして、実施例６〜１０および比較例２に
おいて製造した各リードフレーム押えの被覆層の接合強
度（ピール強度）を測定すると共に、図６に示すワイヤ
ーボンディング装置のリードフレーム押えとして装着
し、各リードフレーム押えの耐摩耗性，粉塵の発生量等
の特性を測定し、比較評価して下記表２に示す結果を得
た。Then, the bonding strength (peel strength) of the coating layer of each lead frame retainer manufactured in Examples 6 to 10 and Comparative Example 2 was measured, and the lead frame retainer was mounted as a lead frame retainer of a wire bonding apparatus shown in FIG. The characteristics of each lead frame holder, such as abrasion resistance and the amount of generated dust, were measured and compared and evaluated to obtain the results shown in Table 2 below.

【００５２】[0052]

【表２】 [Table 2]

【００５３】上記表２に示す結果から明らかなように、
微細なＣｒＯ3 粒子から成り、緻密で高硬度の被覆層を
形成した各実施例に係るリードフレーム押えによれば、
従来材を使用した比較例２の押えと比較して被覆層との
接合強度が高く剥れを発生しない。また、リードフレー
ムとの擦れによる粉塵の発生量が大幅に減少するため、
半導体部品の製造歩留りを大幅に向上させることが可能
となった。As is clear from the results shown in Table 2 above,
According to the lead frame retainer according to each embodiment, which is formed of fine CrO 3 particles and has a dense and high hardness coating layer,
Compared with the presser of Comparative Example 2 using the conventional material, the bonding strength with the coating layer is higher and no peeling occurs. Also, since the amount of dust generated by rubbing with the lead frame is greatly reduced,
It has become possible to greatly improve the production yield of semiconductor components.

【００５４】[0054]

【発明の効果】以上説明の通り本発明に係る半導体部品
固定治具によれば、超微細なクロム酸化物粒子から成る
被覆層が金属母材表面に形成されているため、接合強度
が高く、固定治具の絶縁性および耐摩耗性が良好であ
り、かつ粉塵の発生・付着を防止することができる。し
たがって、この固定治具をダイボンダ装置の吸着筒やワ
イヤーボンディング装置のリードフレーム押えとして使
用した場合に不良が少なく良質な半導体部品を高い製造
歩留りで量産することが可能になる。As described above, according to the jig for fixing a semiconductor component of the present invention, since the coating layer made of ultrafine chromium oxide particles is formed on the surface of the metal base material, the bonding strength is high. The insulation and abrasion resistance of the fixing jig are good, and the generation and adhesion of dust can be prevented. Therefore, when this fixing jig is used as a suction cylinder of a die bonder device or a lead frame holder of a wire bonding device, it becomes possible to mass-produce high-quality semiconductor components with few defects with high production yield.

【００５５】さらに吸着筒やリードフレーム押えを交換
するためにダイボンダ装置やワイヤーボンディング装置
を高頻度で停止する必要がなくなり、長期間に渡って装
置を連続的に運転することが可能となり、装置の保守管
理が大幅に簡素化され、ひいては半導体部品の製造効率
を大幅に改善することができる。Further, it is not necessary to frequently stop the die bonder device and the wire bonding device in order to replace the suction cylinder and the lead frame holder, and the device can be operated continuously for a long period of time. Maintenance management is greatly simplified, and the manufacturing efficiency of semiconductor components can be greatly improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明に係る半導体部品固定治具としての吸着
筒を組み込んだダイボンダ装置の一実施例であり、要部
となるダイ吸着部のみを拡大して示す断面図。FIG. 1 is a cross-sectional view showing, in an enlarged manner, only a die suction portion, which is a main part, of a die bonder device incorporating a suction tube as a semiconductor component fixing jig according to the present invention.

【図２】本発明に係る半導体部品固定治具としてのリー
ドフレーム押えの一実施例を示す斜視断面図。FIG. 2 is a perspective sectional view showing one embodiment of a lead frame retainer as a semiconductor component fixing jig according to the present invention.

【図３】ダイボンダ装置の構成例を示す斜視図。FIG. 3 is a perspective view showing a configuration example of a die bonder device.

【図４】図３における吸着筒を拡大して示す斜視図。FIG. 4 is an enlarged perspective view showing the suction cylinder in FIG. 3;

【図５】従来のダイボンダ装置のダイ吸着部を拡大して
示す断面図。FIG. 5 is an enlarged sectional view showing a die suction portion of a conventional die bonder device.

【図６】ワイヤーボンディング装置の構成例を示す斜視
図。FIG. 6 is a perspective view showing a configuration example of a wire bonding apparatus.

【符号の説明】[Explanation of symbols]

１ 半導体ペレット ２ ウエハカセットリング ３ プリアライメント ４ ダイ吸着用コレット ５ リードフレーム ５ａ リード ６ ダイボンディング用コレット ７ 突き上げピン ８ フィルム ９ 凹陥部 １０ 吸引孔 １３，１３Ａ 吸着筒 １３ａ 被覆層 １３ｂ 金属母材（Ｓ４５Ｃ） １４ ピン挿入孔 １５ 吸引孔 １６，１６Ａ スリーブ １７ マンドレル ２０ ワイヤーボンディング装置 ２１ ボンディングワイヤー ２１ａ ボール（ネイルヘッド） ２２ ワイヤーボンディングキャピラリ ２３ 放電電極 ２３ａ 放電部 ２４，２４ａ リードフレーム押え ２５ 駆動手段 ２６ 開口部 ２７ ボンディングステージ（ヒータブロック） ２８ 金属母材 ２９ 被覆層 DESCRIPTION OF SYMBOLS 1 Semiconductor pellet 2 Wafer cassette ring 3 Pre-alignment 4 Die adsorption collet 5 Lead frame 5a Lead 6 Die bonding collet 7 Push-up pin 8 Film 9 Depression 10 Suction hole 13, 13A Suction cylinder 13a Coating layer 13b Metal base material (S45C) 14) Pin insertion hole 15 Suction hole 16, 16A sleeve 17 Mandrel 20 Wire bonding device 21 Bonding wire 21a Ball (nail head) 22 Wire bonding capillary 23 Discharge electrode 23a Discharge unit 24, 24a Lead frame retainer 25 Driving means 26 Opening 27 Bonding stage (heater block) 28 Metal base material 29 Coating layer

Claims (8)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 金属母材表面にクロム酸化物を主成分と
する被覆層が形成されていることを特徴とする半導体部
品固定治具。1. A jig for fixing a semiconductor component, wherein a coating layer containing chromium oxide as a main component is formed on the surface of a metal base material. 【請求項２】 クロム酸化物は酸化第二クロム（Ｃｒ2
Ｏ3 ）であることを特徴とする請求項１記載の半導体部
品固定治具。2. The chromium oxide is chromic oxide (Cr 2).
2. The jig for fixing a semiconductor component according to claim 1, wherein the jig is O 3 ). 【請求項３】 クロム酸化物は平均粒径が０．１〜０．
５μｍの酸化第二クロム（Ｃｒ2 Ｏ3 ）微粒子であるこ
とを特徴とする請求項１記載の半導体部品固定治具。3. The chromium oxide has an average particle diameter of 0.1 to 0.1.
Semiconductor component fixture according to claim 1, characterized in that a 5μm chromic oxide (Cr 2 O 3) microparticles. 【請求項４】 被覆層は暗緑色であることを特徴とする
請求項１記載の半導体部品固定治具。4. The jig for fixing a semiconductor component according to claim 1, wherein the coating layer is dark green. 【請求項５】 被覆層は、表面粗さが最大高さ（Ｒmax
）基準で５μｍ以上の金属母材表面に形成したもので
あることを特徴とする請求項１記載の半導体部品固定治
具。5. The coating layer has a maximum surface roughness (Rmax).
2. The jig for fixing a semiconductor component according to claim 1, wherein the jig is formed on a surface of a metal base material having a standard of 5 μm or more. 【請求項６】 金属母材と被覆層との間に、鉄化合物と
クロム酸化物との反応層が形成されていることを特徴と
する請求項１記載の半導体部品固定治具。6. The semiconductor component fixing jig according to claim 1, wherein a reaction layer of an iron compound and chromium oxide is formed between the metal base material and the coating layer. 【請求項７】 半導体部品固定治具が、半導体素子を接
合するリードフレームを押圧固定するためのリードフレ
ーム押えであることを特徴とする請求項１記載の半導体
部品固定治具。7. The semiconductor component fixing jig according to claim 1, wherein the semiconductor component fixing jig is a lead frame retainer for pressing and fixing a lead frame to which a semiconductor element is joined. 【請求項８】 半導体部品固定治具が、半導体素子を吸
着により固定する吸着筒であることを特徴とする請求項
１記載の半導体部品固定治具。8. The jig for fixing a semiconductor component according to claim 1, wherein the jig for fixing a semiconductor component is a suction tube for fixing a semiconductor element by suction.
JP18218396A 1996-07-08 1996-07-11 Semiconductor component fixing jig Expired - Fee Related JP2877761B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP18218396A JP2877761B2 (en) 1996-07-11 1996-07-11 Semiconductor component fixing jig
KR1019970709930A KR100324857B1 (en) 1996-07-08 1997-07-04 Supporting fixture and bonding device for semiconductor component fixing jig and semiconductor component
PCT/JP1997/002335 WO1998001902A1 (en) 1996-07-08 1997-07-04 Semiconductor component fixing jig, table for placement of semiconductor component and bonding apparatus
TW086109779A TW354414B (en) 1996-07-08 1997-07-08 A fixture of a semiconductor part, a platform for a semiconductor part and a joint device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18218396A JP2877761B2 (en) 1996-07-11 1996-07-11 Semiconductor component fixing jig

Publications (2)

Publication Number Publication Date
JPH1027811A JPH1027811A (en) 1998-01-27
JP2877761B2 true JP2877761B2 (en) 1999-03-31

Family

ID=16113798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18218396A Expired - Fee Related JP2877761B2 (en) 1996-07-08 1996-07-11 Semiconductor component fixing jig

Country Status (1)

Country Link
JP (1) JP2877761B2 (en)

Also Published As

Publication number Publication date
JPH1027811A (en) 1998-01-27

Similar Documents

Publication Publication Date Title
TW554507B (en) Bonding tool with polymer coating
US6475646B2 (en) Lead frame and method of manufacturing the lead frame
EP3136427B1 (en) Bonding wire for semiconductor device
KR102280653B1 (en) Electronic part mounting substrate and method for producing same
US20040079033A1 (en) Abrasive article and manufacturing method thereof
TW200701275A (en) Ceramic electronic component and manufacturing method thereof
US3939559A (en) Methods of solid-phase bonding mating members through an interposed pre-shaped compliant medium
US6878461B2 (en) Surface treatment structure, contact, sliding, fitting-in and ornamental members, and method for manufacturing the same
CN1780533B (en) Bonding apparatus using conductive material
JP2877761B2 (en) Semiconductor component fixing jig
CN104733589B (en) A kind of preparation method of LED encapsulation cover plates
US20020079349A1 (en) Wire bonding capillary
KR100324857B1 (en) Supporting fixture and bonding device for semiconductor component fixing jig and semiconductor component
JP2003168725A (en) Wafer support member and method of manufacturing the same
JPS5822663A (en) Electrodeposition type grinding stone and manufacture thereof
JP2883582B2 (en) Receiving pedestal and bonding device for mounting semiconductor components
Hang et al. Study on the adhesion between epoxy molding compound and nanocone-arrayed Pd preplated leadframes
JPH05121469A (en) Die bonder apparatus
KR102306289B1 (en) Coated electode for resistance welding and manufacturing method thereof
JPS61162284A (en) Insulating structure for spot gun electrode and its production
JPH0989930A (en) Contact for electronic equipment and its manufacture
JP2003100795A (en) Capillary for wire bonding
KR19990010033A (en) Capillary with Coated Tip
JP2010080915A (en) Vacuum suction nozzle assembly
JPH06262275A (en) Die for plastic working of metal

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees