[go: up one dir, main page]

JP2871938B2 - Manufacturing method of liquid crystal display device - Google Patents

Manufacturing method of liquid crystal display device

Info

Publication number
JP2871938B2
JP2871938B2 JP6291392A JP6291392A JP2871938B2 JP 2871938 B2 JP2871938 B2 JP 2871938B2 JP 6291392 A JP6291392 A JP 6291392A JP 6291392 A JP6291392 A JP 6291392A JP 2871938 B2 JP2871938 B2 JP 2871938B2
Authority
JP
Japan
Prior art keywords
liquid crystal
ultrasonic
display device
crystal display
tft substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP6291392A
Other languages
Japanese (ja)
Other versions
JPH05267264A (en
Inventor
祐二 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAGOSHIMA NIPPON DENKI KK
Original Assignee
KAGOSHIMA NIPPON DENKI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KAGOSHIMA NIPPON DENKI KK filed Critical KAGOSHIMA NIPPON DENKI KK
Priority to JP6291392A priority Critical patent/JP2871938B2/en
Publication of JPH05267264A publication Critical patent/JPH05267264A/en
Application granted granted Critical
Publication of JP2871938B2 publication Critical patent/JP2871938B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Cleaning By Liquid Or Steam (AREA)
  • Thin Film Transistor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は液晶表示装置の製造方法
に関し、特にTFT基板の超音波洗浄工程を含む液晶表
示装置の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal display device, and more particularly to a method for manufacturing a liquid crystal display device including an ultrasonic cleaning step for a TFT substrate.

【0002】[0002]

【従来の技術】従来、TFT基板の洗浄は、図5に示す
よに、高い振動数を有する超音波(800〜1,200
kHz)振動子5が底面に設置された超音波洗浄槽4に
TFT基板1を収納したカセット2を入れ支持台3の上
に乗せて行われていた。この場合、TFT基板1は振動
子5に対し、垂直に設置されていた。洗浄装置の洗浄槽
は、複数槽並列に設置され、洗浄槽は、それぞれ水,ア
ルカリ,有機溶剤(フロン,IPA等)で満たされてい
る。
2. Description of the Related Art Conventionally, as shown in FIG. 5, cleaning of a TFT substrate is performed by using an ultrasonic wave having a high frequency (800 to 1,200).
(kHz) A cassette 5 accommodating a TFT substrate 1 is placed in an ultrasonic cleaning tank 4 provided with a vibrator 5 on the bottom surface, and placed on a support 3. In this case, the TFT substrate 1 was set perpendicular to the vibrator 5. A plurality of cleaning tanks of the cleaning device are installed in parallel, and each of the cleaning tanks is filled with water, an alkali, and an organic solvent (such as Freon and IPA).

【0003】超音洗浄は、超音波洗浄槽4の底面に設置
された振動子5より放射された超音波がTFT基板1上
へ達しTFT基板1上の粒子をゆり動かす事により除
去,洗浄される。超音波の周波数が800〜1,200
kHzと高いのは、低周波数(28〜40kHz)では
キャビテーションの発生によりTFT素子が破壊される
ためである。800〜1,200kHzの周波数ではキ
ャビテーションは、ほとんど発生せず、TFT素子は破
壊されない。
In ultrasonic cleaning, ultrasonic waves emitted from a vibrator 5 installed on the bottom of an ultrasonic cleaning tank 4 reach the TFT substrate 1 and are removed and cleaned by shaking particles on the TFT substrate 1. You. The frequency of the ultrasonic wave is 800-1,200
The reason why the frequency is as high as kHz is that at low frequencies (28 to 40 kHz), cavitation occurs and TFT elements are destroyed. At a frequency of 800 to 1200 kHz, cavitation hardly occurs and the TFT element is not destroyed.

【0004】[0004]

【発明が解決しようとする課題】超音波は周波数が高く
なるに従って指向性が強くなる。指向性を示す指向性半
減角は、28kHzで41度,800kHzで1.3
度,1,000kHzで1.0度となる。従って、図5
に示すように、洗浄しようとするTFT基板1を超音波
振動子5と垂直に設置したのでは、TFT素子6面に超
音波がうまく照射されず、したがって、洗浄効果が小さ
いという欠点がある。
The directivity of ultrasonic waves increases as the frequency increases. The directivity half angle indicating the directivity is 41 degrees at 28 kHz and 1.3 at 800 kHz.
The degree becomes 1.0 degree at 1,000 kHz. Therefore, FIG.
As shown in (1), if the TFT substrate 1 to be cleaned is installed perpendicular to the ultrasonic vibrator 5, the surface of the TFT element 6 is not irradiated with ultrasonic waves well, and therefore, there is a disadvantage that the cleaning effect is small.

【0005】本発明の目的は、洗浄効果の優れた洗浄工
程を含む液晶表示装置の製造方法を提供することにあ
る。
An object of the present invention is to provide a method of manufacturing a liquid crystal display device including a cleaning step having an excellent cleaning effect.

【0006】[0006]

【課題を解決するための手段】本発明は、800〜1,
200kHzの周波数の超音波にて超音波洗浄を行う工
程を含む液晶表示装置の製造方法において、たがいに所
定の間隔を有して厚さ方向に配列してカセットに収納さ
れた複数のTFT基板をそれぞれの前記TFT基板のT
FT素子表面が隣の前記TFT基板の前記超音波の影に
ならない角度に前記厚さ方向に超音波振動子側へ傾け超
音波洗浄を行う工程を含む。ここで、前記カセットが置
かれた支持台を、前記超音波の定在波のピッチ以上の距
離を上下動に揺動することができる。
SUMMARY OF THE INVENTION The present invention relates to
The method of manufacturing a liquid crystal display device comprising the step of performing ultrasonic cleaning with an ultrasonic frequency of 200kHz, each other Tokoro
A plurality of TFT substrates housed in a cassette arranged in the thickness direction at regular intervals are separated by the T
And performing ultrasonic cleaning by inclining the FT element surface toward the ultrasonic vibrator in the thickness direction at an angle such that the ultrasonic wave does not shadow the adjacent TFT substrate. Here, the cassette is placed
The supported support is moved a distance equal to or more than the pitch of the ultrasonic standing wave.
The separation can be swung up and down.

【0007】[0007]

【実施例】次に、本発明の実施例について図面を参照し
て説明する。
Next, embodiments of the present invention will be described with reference to the drawings.

【0008】図1は本発明の第1の実施例の超音波洗浄
槽の断面図、図2は図1のTFT基板の傾きを説明する
部分拡大断面図である。
FIG. 1 is a sectional view of an ultrasonic cleaning tank according to a first embodiment of the present invention, and FIG. 2 is a partially enlarged sectional view illustrating the inclination of the TFT substrate of FIG.

【0009】第1の実施例は、図1に示すように、TF
T基板1のTFT素子面6が超音波振動子5の方向に向
くようにTFT基板1をθ度傾けて設置する。具体的に
は、超音波洗浄槽4の支持台3をθ度傾ける。これによ
り、支持台3に乗せたカセット2及びカセット2に収納
されたTFT基板1も振動子5に対しθ度傾く事にな
る。
In the first embodiment, as shown in FIG.
The TFT substrate 1 is set to be inclined by θ degrees so that the TFT element surface 6 of the T substrate 1 faces the direction of the ultrasonic transducer 5. Specifically, the support 3 of the ultrasonic cleaning tank 4 is inclined by θ degrees. As a result, the cassette 2 placed on the support 3 and the TFT substrate 1 stored in the cassette 2 are also inclined by θ degrees with respect to the vibrator 5.

【0010】ここで、図2に示すように、傾き角θを大
きくするとTFT基板1aの上部が隣りのTFT基板1
bの影になり、超音波が照射されず、洗浄効果は逆に落
ちることになる。従って、TFT基板1aの長さをl,
TFT基板1a,1b間の距離をaとした場合、振動子
5よりの垂線がTFT基板1bの下端とTFT基板1a
の上端に接する時の角度θ=tan-1(a/l)前後が
適当となる。
Here, as shown in FIG. 2, when the inclination angle θ is increased, the upper part of the TFT substrate 1a is
As a result, the ultrasonic wave is not applied, and the cleaning effect is reduced. Therefore, the length of the TFT substrate 1a is l,
Assuming that the distance between the TFT substrates 1a and 1b is a, the vertical line from the vibrator 5 is connected to the lower end of the TFT substrate 1b and the TFT substrate 1a.
The angle θ = tan -1 (a / l) when it is in contact with the upper end of is suitable.

【0011】図3は本発明の第1の実施例の洗浄方法を
説明する洗浄装置の概略構成図である。
FIG. 3 is a schematic structural view of a cleaning apparatus for explaining a cleaning method according to a first embodiment of the present invention.

【0012】第1の実施例は、図3に示すように、TF
T基板1を収納したカセット2がローダ7より供給させ
ると、搬送ロボット13により、まず、アルカリ槽8へ
浸漬される。ここで有機汚れを除去したあと搬送ロボッ
ト13でリンス槽9へ移されTFT基板1に付着したア
ルカリが除去される。
In the first embodiment, as shown in FIG.
When the cassette 2 containing the T substrates 1 is supplied from the loader 7, the cassette 2 is first immersed in the alkali bath 8 by the transfer robot 13. Here, after removing the organic dirt, the transfer robot 13 transfers the organic dirt to the rinsing tank 9 to remove the alkali adhering to the TFT substrate 1.

【0013】次に、超音波洗浄槽4へ移され粒子状の汚
れを除去し、次いで、高速排水リンス槽10で洗浄さ
れ、最後に、温純水引き上げ乾燥槽11で乾燥されアン
ローダ12へ搬送される。リンス槽9,超音波洗浄槽
4,高速排水リンス槽10はすべて純水で満たされてい
る。
Next, the particles are transferred to an ultrasonic cleaning tank 4 to remove particulate dirt, then washed in a high-speed drain rinse tank 10, and finally dried in a hot pure water pull-drying tank 11 and conveyed to an unloader 12. . The rinsing tank 9, the ultrasonic cleaning tank 4, and the high-speed drain rinsing tank 10 are all filled with pure water.

【0014】このような構成を有する洗浄装置において
TFT基板1の洗浄を行なう。
In the cleaning apparatus having such a structure, the TFT substrate 1 is cleaned.

【0015】ここで、図2に示すl=350mm(幅3
00mm),a=7mm,θ=0度(従来例)及び1度
の条件で洗浄を行なった結果、3μm以上の粒子の除去
数は θ=0度で10個(従来例) θ=1度で62個 であり、TFT基板1を超音波振動子5の方へ傾ける事
により粒子(汚れ)が効率よく除去された。
Here, l = 350 mm (width 3) shown in FIG.
00 mm), a = 7 mm, θ = 0 degrees (conventional example), and 1 degree. As a result, the number of particles having a size of 3 μm or more removed is 10 at θ = 0 degrees (conventional example) θ = 1 degree. By tilting the TFT substrate 1 toward the ultrasonic vibrator 5, particles (dirt) were efficiently removed.

【0016】図4は本発明の第2の実施例を説明する超
音波洗浄槽の断面図である。
FIG. 4 is a sectional view of an ultrasonic cleaning tank for explaining a second embodiment of the present invention.

【0017】超音波洗浄においては定在波の発生により
洗浄むらが生じる(定在波のピッチλ/2は水中25℃
で800kHzの場合1mm,1,000kHzの場合
0.7mm)。第2の実施例は、この洗浄むらを防止す
るため、図4に示すように、揺動機構を付けた例であ
る。
In the ultrasonic cleaning, unevenness of cleaning occurs due to generation of a standing wave (the pitch λ / 2 of the standing wave is 25 ° C. in water).
1 mm for 800 kHz and 0.7 mm for 1,000 kHz). The second embodiment is an example in which a swinging mechanism is provided as shown in FIG. 4 in order to prevent the cleaning unevenness.

【0018】カセット2が置かれた支持台3は揺動用カ
ム14に接しており揺動用カム14の回転に伴い上下動
する。従ってTFT基板1も上下動する。ここで、上下
動の距離は、定在波のピッチλ/2以上にする。
The support 3 on which the cassette 2 is placed is in contact with the swing cam 14 and moves up and down with the rotation of the swing cam 14. Therefore, the TFT substrate 1 also moves up and down. Here, the distance of the vertical movement is equal to or more than the pitch λ / 2 of the standing wave.

【0019】この結果第1の実施例と同じ条件で粒子の
除去数は、 θ=1度で105個 となり、第1の実施例より効率よく除去されていること
が確認できた。
As a result, the number of particles to be removed was 105 at θ = 1 ° under the same conditions as in the first embodiment, and it was confirmed that the particles were removed more efficiently than in the first embodiment.

【0020】[0020]

【発明の効果】以上説明したように本発明は、TFT基
板1のTFTの素子面6を振動子5方向へ傾ける事によ
り、超音波がTFT素子面6に効率よく照射され、従っ
て、付着した粒子(汚れ)が効率よく除去され、清浄な
TFT素子面6が得られるという効果を有する。
As described above, according to the present invention, by inclining the TFT element surface 6 of the TFT substrate 1 in the direction of the vibrator 5, ultrasonic waves are efficiently radiated to the TFT element surface 6, and therefore, the ultrasonic wave is adhered. This has the effect that particles (dirt) are efficiently removed and a clean TFT element surface 6 is obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施例の超音波洗浄槽の断面図
である。
FIG. 1 is a sectional view of an ultrasonic cleaning tank according to a first embodiment of the present invention.

【図2】図1のTFT基板の傾きを説明する部分拡大断
面図である。
FIG. 2 is a partially enlarged cross-sectional view illustrating the inclination of the TFT substrate of FIG.

【図3】本発明の第1の実施例の洗浄方法を説明する洗
浄装置の概略構成図である。
FIG. 3 is a schematic configuration diagram of a cleaning apparatus illustrating a cleaning method according to a first embodiment of the present invention.

【図4】本発明の第2の実施例の超音波洗浄槽の断面図
である。
FIG. 4 is a sectional view of an ultrasonic cleaning tank according to a second embodiment of the present invention.

【図5】従来の超音波洗浄槽の一例の断面図である。FIG. 5 is a sectional view of an example of a conventional ultrasonic cleaning tank.

【符号の説明】[Explanation of symbols]

1,1a,1b TFT基板 2 カセット 3 支持台 4 超音波洗浄槽 5 振動子 6 TFT素子面 7 ローダ 8 アルカリ槽 9 リンス槽 10 高速排水リンス槽 11 温純水引き上げ乾燥槽 12 アンローダ 13 搬送ロボット 14 揺動用カム 1, 1a, 1b TFT substrate 2 Cassette 3 Support stand 4 Ultrasonic cleaning tank 5 Transducer 6 TFT element surface 7 Loader 8 Alkaline tank 9 Rinse tank 10 High-speed drainage rinsing tank 11 Hot pure water pulling and drying tank 12 Unloader 13 Transport robot 14 Oscillating cam

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) H01L 21/304 B08B 3/12 H01L 21/336 H01L 29/786 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/304 B08B 3/12 H01L 21/336 H01L 29/786

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 800〜1,200kHzの周波数の超
音波にて超音波洗浄を行う工程を含む液晶表示装置の製
造方法において、たがいに所定の間隔を有して厚さ方向
に配列してカセットに収納された複数のTFT基板をそ
れぞれの前記TFT基板のTFT素子表面が隣の前記T
FT基板の前記超音波の影にならない角度に前記厚さ方
向に超音波振動子側へ傾け超音波洗浄を行う工程を含む
ことを特徴とする液晶表示装置の製造方法。
1. A method for manufacturing a liquid crystal display device comprising a step of performing ultrasonic cleaning with ultrasonic waves having a frequency of 800 to 1,200 kHz , wherein a thickness direction of the liquid crystal display device is set at predetermined intervals.
The plurality of TFT substrates housed in a cassette arranged in
The thickness of the FT substrate is set so that the thickness of the
A method of performing ultrasonic cleaning by tilting the liquid crystal device toward the ultrasonic vibrator in the opposite direction .
【請求項2】(2) 前記カセットが置かれた支持台を、前記Place the support on which the cassette is placed
超音波の定在波のピッチ以上の距離を上下動に揺動するSwing up and down a distance greater than the pitch of the ultrasonic standing wave
ことを特徴とする請求項1記載の液晶表示装置の製造方A method for manufacturing a liquid crystal display device according to claim 1, wherein
法。Law.
JP6291392A 1992-03-19 1992-03-19 Manufacturing method of liquid crystal display device Expired - Fee Related JP2871938B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6291392A JP2871938B2 (en) 1992-03-19 1992-03-19 Manufacturing method of liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6291392A JP2871938B2 (en) 1992-03-19 1992-03-19 Manufacturing method of liquid crystal display device

Publications (2)

Publication Number Publication Date
JPH05267264A JPH05267264A (en) 1993-10-15
JP2871938B2 true JP2871938B2 (en) 1999-03-17

Family

ID=13213974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6291392A Expired - Fee Related JP2871938B2 (en) 1992-03-19 1992-03-19 Manufacturing method of liquid crystal display device

Country Status (1)

Country Link
JP (1) JP2871938B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6575177B1 (en) * 1999-04-27 2003-06-10 Applied Materials Inc. Semiconductor substrate cleaning system
JP2008046391A (en) * 2006-08-17 2008-02-28 Seiko Epson Corp Method for separating and recovering alloys
WO2012174732A1 (en) 2011-06-24 2012-12-27 Acm Research (Shanghai) Inc. Methods and apparatus for uniformly metallization on substrates
US20170162831A1 (en) * 2014-04-22 2017-06-08 Joled Inc. Method for manufacturing organic el display panel and system for manufacturing organic el display panel
JP6500581B2 (en) * 2015-04-30 2019-04-17 富士ゼロックス株式会社 Cleaning device and droplet discharge device
JP7232395B2 (en) * 2019-03-16 2023-03-03 株式会社不二越 Vacuum degreasing cleaning device and vacuum degreasing cleaning method using the same

Also Published As

Publication number Publication date
JPH05267264A (en) 1993-10-15

Similar Documents

Publication Publication Date Title
JP2696017B2 (en) Cleaning device and cleaning method
US5762084A (en) Megasonic bath
JP2001246331A (en) Cleaning equipment
US5540245A (en) Processing equipment of single substrate transfer type
JP2871938B2 (en) Manufacturing method of liquid crystal display device
JPH0855827A (en) Wafer cassette and cleaning equipment using it
US6209555B1 (en) Substrate cassette for ultrasonic cleaning
JPH07328573A (en) Washing method and apparatus
JP3377414B2 (en) Processing equipment
KR100952087B1 (en) Method and apparatus for megasonic cleaning of patterned substrate
JP3474495B2 (en) Substrate cleaning method and cleaning apparatus
JP3441717B2 (en) Cleaning equipment
US20020069895A1 (en) Megasonic bath
JP2000107710A (en) Ultrasonic substrate treatment apparatus
JPH11260779A (en) Equipment and method for spin cleaning
JPH05243203A (en) Ultrasonic washer
JP2005142309A (en) Substrate cleaning method, apparatus, and system
JP2003320323A (en) Substrate cleaning method
JP2767165B2 (en) Wafer cleaning tank
JP2000208466A (en) Method and apparatus for treating substrate
KR20100034091A (en) Wafer cleaning apparatus and method using megasonic
JP2001170584A (en) Ultrasonic treatment apparatus
JP2690975B2 (en) Method and apparatus for removing photoresist
JPH06112184A (en) Cleaning apparatus
CN211605107U (en) Wafer cleaning device

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 19981124

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080108

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090108

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100108

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110108

Year of fee payment: 12

LAPS Cancellation because of no payment of annual fees