JP2840185B2 - Phosphor thin film and thin film EL panel using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-film EL panel which is thin, has excellent display visibility, is most suitable as a terminal display of OA equipment, and can be applied to a multi-color display thin-film EL panel.
It relates thin film EL panel using the Re phosphor thin Toko Le.

[0002]

2. Description of the Related Art In recent years, as a base material of a phosphor thin film of a thin film EL element, II such as zinc sulfide, calcium sulfide, strontium sulfide, zinc selenide, strontium selenide and the like have been used.
Rare earth elements such as manganese, terbium, samarium, thulium, europium, and cerium are known as elements that become a luminescence center and are added to a group VI compound semiconductor and a base material. Multi-color display thin-film EL panels, especially
In order to manufacture an EL panel capable of full-color display, it is necessary to obtain three kinds of light emission of red, green, and blue with high luminance and high color purity from a phosphor thin film. Red light emission obtained by separating the red component of yellow-orange light from the ZnS: Mn phosphor thin film using a CdSSe or organic compound red filter, and the green component of yellow-orange light from the ZnS: Mn phosphor thin film The green light emission obtained by separating the light using a green filter made of an organic compound and the green light emission from a ZnS: Tb phosphor thin film are currently used in a multicolor display thin film EL panel. As blue light emission, SrS: C
High-luminance blue-green light emission obtained from an e-phosphor thin film is known. By combining with a blue filter, blue light emission with good color purity can be obtained.

[0003]

However, since the chemical or physical properties of the base material and the luminescent center material of the phosphor differ depending on each material, a high luminance depends on the type of the phosphor thin film. The method for producing a multicolor thin-film EL panel is
For reasons such as are required several types of film forming apparatus, there is more complex, the manufacturing cost of the panel is increased problem. For example, high brightness is obtained by forming the ZnS: Mn phosphor thin film by using a resistance heating evaporation method, an electron beam evaporation method, or an atomic layer epitaxial (ALE) method. High brightness is obtained by forming the ZnS: Tb phosphor thin film using a high frequency sputtering method and the SrS: Ce phosphor thin film using an electron beam evaporation method. In order to solve the above problems, it is possible to obtain high brightness using the same film forming method and film forming apparatus,
There has been a demand for a phosphor base material and a luminescent center material having similar chemical or physical properties.

The conventional phosphor thin film (ZnS: M
n, ZnS: Tb, SrS: Ce), when a multicolor thin-film EL panel is manufactured, a filter of CdSSe or an organic compound is often required in order to obtain red, green, and blue light emission. There has been a problem that the manufacturing process of the multicolor thin-film EL panel becomes more complicated, and a problem that the luminance of the panel is reduced to 10 to 60% of the luminance before transmission by passing through the filter, and the image of the panel becomes dark. In order to solve the above problem, there has been a demand for a phosphor thin film that can obtain red, green, and blue light emission with good color purity without using a filter.

An object of the present invention is to obtain a multicolor EL having a wide range from red to blue without requiring a filter. Another object of the present invention is to simplify the manufacturing process of a multicolor display thin film EL panel and reduce the manufacturing cost of the multicolor display thin film EL panel.

[0006]

[MEANS FOR SOLVING THE PROBLEMS] To achieve the above object
The phosphor thin film of the present invention has a structural formula of AB ₂ C ₄ : Re.
A of the phosphor thin film mainly composed of the compound represented by
g, Ca, Sr, Ba, Eu and Yb.
At least one element, B is In and A
a combination of Ga with at least one element selected from
So that C becomes S and Se
At least one selected element, and Re
Become a rare earth additive.

[0007]In addition, the phosphor thin film of the present invention has AB
_Two C _Four : Mainly a compound represented by the structural formula of Re
A phosphor thin film wherein A is Mg, Ca, Sr, Ba, E
Be at least one element selected from u and Yb
At least B is selected from In and Al
So that it is one element, C is selected from S and Se
At least one element, and Re is a rare earth
Kind of additives.

The rare earth additive is selected from Eu and Ce.
It is better to use at least one of the selected elements. In addition, red
A is Sr and B is I
Let n and C be S and Re be Eu. In addition, the phosphor thin film
The content of the rare earth element with respect to the above A is 0.1 to 10 atoms.
%.

Further, the thin-film EL panel of the present invention is characterized in that
B ₂ C ₄ : Mainly a compound represented by the structural formula of Re
It is configured using a phosphor thin film.

[0010]

According to the present invention, the phosphor thin film ranges from red to blue.
To emit light of a wide variety of colors
You. In particular, the SrIn ₂ S ₄ : Eu phosphor thin film has a pure color.
Red light emission of good degree is obtained by Sr (In, Ga) ₂ S ₄ : E
u phosphor thin film is excellent green luminescence color purity, BaAl ₂
S ₄ : Eu phosphor thin film or Sr (In, Ga) ₂ S ₄ : C
e-phosphor thin film emits blue light with good color purity
become.

It is to be noted that rare earths which are additives of the phosphor thin film
Is present as a rare earth ion in the compound,
Work as In this case, the unique properties of rare earth ions
The light emission of the affected color is shown. Furthermore, the present invention
According to the report, the thin-film EL panel covers a wide area from red to blue.
Emit light of various colors. Above all, S
Thin-film EL panel using rIn ₂ S ₄ : Eu phosphor thin film
, The thin-film EL panel is
It emits colored light.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a thin film EL to which the present invention can be applied.
It is sectional drawing of a panel . A transparent electrode 2 of indium oxide (ITO) to which tin is added and a lower insulating film 3 of silicon oxynitride (SiON) are sequentially deposited on a glass 1 by using a high frequency sputtering method to obtain a substrate 4 for an EL panel . . Substrate 4
The phosphor thin film 5 was formed thereon at 600 to 800 nm. On the phosphor thin film 5, barium tantalate (BaTa)
After depositing an upper insulating film 6 of ₂ O _x ; x about 6) by using a high frequency sputtering method, a back electrode 7 of aluminum (Al) was deposited by an electron beam evaporation method to obtain a thin film EL panel . . An AC voltage having a frequency of 1 kHz is applied between the transparent electrode 2 of ITO and the back electrode 7 of Al to form a thin film EL panel.
Driven flannel .

Hereinafter, a method of manufacturing the phosphor thin film of the first embodiment will be described. The phosphor thin film according to the first embodiment has Sr (In, Ga) in which the rare earth element serving as the emission center is Eu.
₂ S ₄ : Eu phosphor thin film. FIG. 2 is a conceptual diagram of a high-frequency sputtering apparatus which is an apparatus for manufacturing a phosphor thin film according to the first embodiment.

As the sputtering target 8, Sr (I
n, Ga) ₂ S _4: Eu is used phosphor powder. The addition amount of Eu, which is a rare earth additive serving as a luminescence center, was set to 5 atomic%, that is, x = 0.05. In: Ga ratio
Was set to 5:95. Ar + 5% H ₂ S mixed gas was used as sputtering gas 9. 10 is a gas introduction valve, 11 is a high frequency power supply, 12 is an insulator, 13 is a vacuum chamber, 14 is a main valve,
15 an oil diffusion pump, 16 is an oil rotary pump. A sputtering rate of about 10 nm / min was obtained under the sputtering conditions of a substrate temperature of 300 to 600 ° C., a gas pressure of 5 Pa, and a high frequency power density of 3.8 W / cm ² . Under the above sputtering conditions, a thin film made of Sr-Eu-In-Ga-S is manufactured on the substrate 4 and then heat-treated at 650 ° C. for 1 hour in a vacuum to show excellent EL characteristics. Sr (I
n, Ga) ₂ S _4: it was possible to produce the Eu phosphor thin film.

FIG. 3 is a view showing an X-ray diffraction pattern of the phosphor thin film. For comparison, an X-ray diffraction pattern of a thin film formed by using Ar as a sputtering gas is also shown in FIG. Instead of the conventional sputtering method in which the sputtering gas is Ar gas, in the first embodiment, an Ar + H ₂ S mixed gas containing 5% of H ₂ S, which is a hydride gas containing S, in the sputtering gas is used. By using the reactive sputtering method as a sputtering gas, several peaks could be recognized in the X-ray diffraction pattern. This is the first
Shows that a crystallized thin film can be obtained by the method for manufacturing a phosphor thin film of Example 1.
This indicates that a high performance phosphor thin film matrix could be manufactured by the reactive sputtering method using the r + H ₂ S mixed gas as a sputtering gas.

FIG. 4 shows the EL characteristics of the phosphor thin film. The change of the luminance with respect to the voltage is shown. For comparison, the same figure also shows the EL characteristics of a thin film formed using Ar as a sputtering gas as a conventional example. The EL characteristics of the second embodiment shown in FIG. 4 will be described later. Ar sputtering gas
Instead of the conventional sputtering method which is a gas, in the first embodiment, an Ar + H ₂ S mixed gas containing 5% of H ₂ S which is a hydride gas containing S in a sputtering gas is used as a sputtering gas. By using the reactive sputtering method,
High EL luminance could be obtained. This indicates that a high-performance phosphor thin film was manufactured by the method for manufacturing a phosphor thin film of the first embodiment. It is considered that H ₂ S in the sputtering gas plays a role in preventing the re-evaporation of the S component from the phosphor thin film during the growth of the phosphor thin film.

FIG. 5 shows an EL spectrum of the phosphor thin film.
FIG. The EL spectrum of the second embodiment will be described later.
You. The emission peak wavelength is about 526 nm,
The full width at half maximum was about 47 nm. This means that this
The phosphor produced by the method for producing a phosphor thin film of Example 1
Optical thin film emits green lightSr (In, Ga)
_Two S _Four : EuThis indicates that the film is a phosphor thin film.

As described above, Sr (In, Ga)
By forming a phosphor thin film represented by the structural formula of ₂ S ₄ : Eu by a reactive sputtering method containing H ₂ S gas, which is a hydride containing S, in a sputtering gas, high-performance Sr (In, Ga) ₂ S ₄ : Eu phosphor thin film could be manufactured, and a thin film EL with high luminance could be obtained.

In the first embodiment, the case where the phosphor thin film material is a green light emitting Sr (In, Ga) ₂ S ₄ : Eu phosphor has been described.
a, Ba, Eu, Yb, a rare earth element such as Ce or Pr in place of the Eu rare earth element, or A instead of Ga.
Sr (In, Ga) ₂ S ₄ : E
The thin film EL could be observed even with a phosphor thin film other than u . Among the rare earth additives, Eu and Ce exhibit high luminance, and in particular, high luminance EL in the case of a red light emitting SrIn ₂ S ₄ : Eu, green light emitting Sr (In, Ga) ₂ S ₄ : Eu phosphor thin film. Could be obtained. Also, Sr (I
_{n, Ga) 2 S 4:} Ce and BaAl ₂ S _4: in the case of Eu phosphor thin film, it was possible to obtain an excellent blue EL element color purity.

As described above, a thin film EL covering the entire visible region can be realized from a phosphor thin film mainly composed of the compound represented by the structural formula of AB ₂ C ₄ : Re. In a phosphor thin film mainly composed of a compound represented by the structural formula of AB ₂ C ₄ : Re, A, B, C, Re
Is not limited to a single element. For example,
_{(Sr 1-x Ca x)} (Ga 1-y In y) 2 (S 1-z Se
_{z) 4:} Eu, as Ce, A, B, C, may be a plurality of elements constituting the, it goes without saying that the rare earth elements may be added several types.

In this embodiment, a case was described in which a green light emitting Sr (In, Ga) ₂ S ₄ : Eu phosphor thin film was formed by a reactive sputtering method using an Ar + H ₂ S mixed gas as a sputtering gas. Is, for example, Sr (In,
Ga) ₂ Se ₄ : Eu phosphor thin film, Ar + H
The ₂ Se gas mixture and the sputtering gas, the sputtering target SrGa ₂ Se _4: by Eu phosphor powder and the reactive sputtering method, I was able film phosphor thin film showing a high luminance EL, Sr (In, Ga) _{2 (S 1-x Se x} ) 4: E
In the case of a u phosphor thin film, a mixed gas of Ar + H ₂ Se is used as a sputtering gas, and a sputtering target is SrGa.
_A film could be formed by a reactive sputtering method using ₂ S ₄ : Eu phosphor powder.

Further, in the first embodiment, green light is emitted.
The case where the Sr (In, Ga) ₂ S ₄ : Eu phosphor powder is used as the sputter target has been described. Even when a ceramic target is used instead of the powder target, the same excellent EL characteristics as in the case of the powder target are exhibited. A phosphor thin film was obtained. The ceramic target was able to form a phosphor thin film with higher reproducibility.

In the first embodiment, in a phosphor thin film mainly composed of a compound represented by the structural formula of AB ₂ C ₄ : Re, a hydride gas having an element constituting C is contained in a sputtering gas. The present invention is also characterized in that a phosphor thin film is formed by a reactive sputtering method. Therefore,
It is sufficient that a hydride gas having an element constituting C is contained in the sputtering gas, and there is no limitation on the form and shape of the sputtering target, the amount of mixed gas, and the type of gas. For example, in place of the Ar + H ₂ S gas mixture, it may be a mixed gas of several kinds of gases such as _{Ar + He + H 2 S +} H 2 Se gas mixture, the mixing amount of the gas of hydrides with elements constituting the C May not be 5%.

Second Embodiment Next, in a phosphor thin film mainly composed of a compound represented by the structural formula of AB ₂ C ₄ : Re, one kind of each element constituting A, B, C and Re is used. A plurality of steam gases having the above,
A method of manufacturing a phosphor thin film which is independently controlled and supplied to the substrate surface will be described. That is, in the second embodiment, the red light emission SrIn of the rare earth additive serving as the light emission center is Eu.
_A method for producing a ₂ S ₄ : Eu phosphor thin film will be described.

FIG. 6 is a conceptual diagram of an apparatus for manufacturing a phosphor thin film according to the second embodiment. A plurality of vapor gases having respective metal elements constituting A, B, C, and Re are respectively represented by Sr metal vapor gas, EuCl ₃ compound vapor gas which is a halide of Eu, In metal vapor gas, and H ₂ S gas. The phosphor thin film of the second embodiment is manufactured by the reactive evaporation method described above.

In FIG. 6, first, the substrate 4 placed in the high vacuum chamber 13 was heated to 600 ° C., and the high vacuum device was evacuated to 1 × 10 ⁻⁶ Pa or less. A predetermined amount of H ₂ is applied to the surface of the substrate 4.
In order to supply S, the gas introduction valve 10 is operated so that the pressure becomes 1 × 10 ^-2 Pa, and the H ₂ S gas cylinder 17 is supplied.
, H ₂ S gas was introduced into the high vacuum apparatus. Next, Sr metal 18, In metal 19, Eu placed in vacuum
The Cl ₃ compound powders 20 were individually heated and gasified, and supplied to the surface of the substrate 4. 500-600 ° C for Sr metal,
By keeping the In metal at 400 to 900 ° C. and the EuCl ₃ compound powder at 500 to 800 ° C., Sr—Eu—In
A thin film of -S was produced. After forming the thin film, 6
By performing the heat treatment at 50 ° C. for 1 hour, a red light-emitting SrIn ₂ S ₄ : Eu phosphor thin film exhibiting excellent EL characteristics could be manufactured.

FIG. 4 shows the EL characteristics of the SrIn ₂ S ₄ : Eu phosphor thin film of the second embodiment. Green light-emitting Sr (In, Ga) ₂ S of the first embodiment formed by reactive sputtering.
₄ : As shown in FIG. 4 for comparison with the case of the Eu phosphor thin film, it can be seen that high EL luminance can also be realized by this reactive vapor deposition method. FIG. 5 shows an EL spectrum of the phosphor thin film of the second embodiment. Green light-emitting Sr (In, Ga) ₂ S _{4 of} the first embodiment formed by the reactive sputtering method :
It is shown in FIG. 5 for comparison with the case of the Eu phosphor thin film. The peak wavelength of light emission was about 630 nm, and the half width of the spectrum was about 65 nm. This indicates that the phosphor thin film of the second embodiment manufactured by this method of manufacturing a phosphor thin film is a SrIn ₂ S ₄ : Eu phosphor thin film that emits red light.

As described above, SrIn ₂ S ₄ : E
The phosphor thin film represented by the structural formula of u is formed of Sr metal vapor gas, EuCl ₃ compound vapor gas, In metal vapor gas, H
By forming the phosphor thin film by controlling the ₂ S gas independently and supplying it to the substrate surface,
A high-performance SrIn ₂ S ₄ : Eu phosphor thin film could be manufactured, and a high-luminance thin film EL could be obtained.

In the second embodiment, A, B, C, Re
A plurality of vapor gases having one or more kinds of elements constituting the above are respectively described as Sr metal vapor gas, EuCl ₃ compound vapor gas, In metal vapor gas, and H ₂ S gas, which are supplied to the substrate surface. Even if solid sulfur is heated and gasified instead of H ₂ S gas is supplied, a phosphor thin film of excellent quality can be formed which is not different from the case of using hydrogen sulfide gas. Instead of the EuCl ₃ compound powder, the phosphor thin film could be formed by heating and gasifying the metal Eu. Also, instead of the Sr metal, the SrCl ₂ compound powder was heated and gasified to form a phosphor thin film.
Even when the InCl ₃ compound powder was heated and gasified instead of the metal, a phosphor thin film could be formed.

This means that A and B, which are individually gasified,
MBE method for supplying each metal vapor constituting C, Re and C to the surface of the substrate, or vaporizing individually vaporized halides of A, B and Re, and the elements constituting C A phosphor thin film is manufactured by a halogen transport CVD method in which a hydride gas is supplied to the substrate surface, and an ALE method (also called intermittent CVD method) in which a plurality of vapor gases are alternately supplied to the substrate surface. Indicates that you can do it.

In the second embodiment, A, B,
Red light-emitting SrIn ₂ S ₄ : a plurality of vapor gases having one or more kinds of elements constituting C and Re as Sr metal vapor gas, EuCl ₃ compound vapor gas, In metal vapor gas, and H ₂ S gas, respectively: The case where the Eu phosphor thin film is formed has been described. By supplying Ga metal vapor gas to the substrate surface in addition to In metal vapor gas, green light emission is achieved.
An Sr (In, Ga) ₂ S ₄ : Eu phosphor thin film was formed. Further, by controlling Sr metal vapor gas, CeCl ₃ compound vapor gas, In vapor gas, Ga metal vapor gas, and H ₂ S gas and supplying them to the substrate surface, blue light emission Sr is obtained.
A (In, Ga) ₂ S ₄ : Ce phosphor thin film was also formed.

The second embodiment shows that a wide variety of phosphor thin films of the present invention can be formed according to the method for producing a phosphor thin film, and the red, green, and blue phosphor thin films of the present invention can be formed. This shows that a single apparatus can be used to form a film, and that a low-cost multicolor display thin-film EL panel can be manufactured. The second embodiment is a method of manufacturing a phosphor thin film characterized in that a plurality of vapor gases having at least one of the elements constituting A, B, C, and Re are independently controlled and supplied to a substrate surface. It is about the method. Therefore, A, B, C,
A plurality of vapor gases having one or more kinds of elements constituting Re may be independently controlled and supplied to the substrate surface to produce a phosphor thin film, and the type of each vapor gas and the gas supply method may be used. There is no restriction. The atmospheric pressure when supplying the steam gas is not limited.

[0033] (Third Embodiment) Next, AB ₂ C _4: the phosphor thin film mainly composed of compounds represented by the structural formula Re, will be described a thin film EL panel having multiple types. As a third embodiment, red Sr
In ₂ S ₄ : Eu, green Sr (In, Ga) ₂ S ₄ : E
FIG. 7 shows a multicolor display thin film EL panel having a u, blue Sr (In, Ga) ₂ S ₄ : Ce phosphor thin film. In FIG. 7, a red phosphor thin film 21, a green phosphor thin film 22, and a blue phosphor thin film 23 processed in a stripe shape are arranged in parallel on a substrate 4.

Since the transparent electrode 2 and the lower insulating layer 3 were transparent, red, green and blue luminescence from the phosphor thin film could be directly observed through the glass 1. Because no filter was used, and because the phosphor thin film could be manufactured with the same manufacturing equipment, manufacturing equipment and manufacturing processes were simplified,
Panels could be manufactured. In this third embodiment, red, green,
The multicolor display thin-film EL panel in which three types of blue phosphor thin films are processed in a stripe shape and arranged in parallel has been described. However, a plurality of phosphor thin films are stacked, and an insulating film is formed above and below each phosphor thin film. The multi-color display thin film E may be provided by providing an electrode thin film and applying a separate voltage to the plurality of phosphor thin films.
L panels can be manufactured. Further, when three kinds of phosphor thin films of red, green and blue are sequentially stacked, a white display thin film EL panel can be manufactured.

[0035] The third embodiment relates to a thin film EL panel to have a said phosphor thin film of the present invention. Accordingly, the thin film EL panel, a phosphor thin film of the invention it is sufficient is free or does not the type and number of the phosphor thin film is limited. For example, conventional yellow-orange ZnS: and Mn phosphor thin film, may be combined fluorescent thin film of the present invention, green _{Sr (In, Ga) 2 S} 4: Eu and red Sr
Only two types of phosphor thin films of In ₂ S ₄ : Eu may be combined. Any number of phosphor thin films of the present invention may be combined . The emission color and combination of the phosphor thin films are not limited.

[0036]

According to the present invention, the structure of AB ₂ C ₄ : Re
Formula (where A is Mg, Ca, Sr, Ba, Eu and
Y is at least one element selected from Yb, and B is I
Ga and at least one element selected from n and Al
Is a composite element in which C is S and Se
Re is a rare earth element
Are shown. ) Fluorescence mainly of the compound represented by
Because it constitutes a body thin film, it covers a wide range from red to blue
Phosphor thin film exhibiting multicolor EL can be provided.

[0037]Further, according to the present invention, AB _Two C _Four : Re
(Where A is Mg, Ca, Sr, Ba, Eu, etc.)
And at least one element selected from Yb
Is at least one element selected from In and Al
And C is at least one selected from S and Se
Re is a rare earth additive. )
Since the phosphor thin film is mainly composed of
Phosphor thin showing a wide range of multicolor EL from blue to blue
A membrane can be provided. Above all, SrIn
_Two S _Four : Mainly a compound represented by the structural formula of Eu
Phosphor which shows red EL with high brightness
A thin film can be provided.

According to the present invention, the above AB ₂ C ₄ :
The structural formula of Re (where A is Mg, Ca, Sr, Ba, E
at least one element selected from u and Yb
B is at least one selected from In and Al
Composite element combining element and Ga, or In and
And at least one element selected from Al and Al
Is at least one element selected from S and Se
And Re indicates a rare earth additive. Compound represented by)
Thin-film EL panel using phosphor thin film mainly composed of
So that the color range from red to blue can be
To provide a thin-film EL panel showing multi-color EL over a range
be able to. In particular, the structure of SrIn ₂ S ₄ : Eu
Using a phosphor thin film mainly composed of the compound represented by the formula
When a film EL panel is constructed, a thin film showing a high-luminance red EL
A membrane EL panel can be provided.

[Brief description of the drawings]

FIG. 1 is a structural view of a thin film EL panel using a phosphor thin film according to a first embodiment of the present invention.

FIG. 2 is a conceptual diagram of an apparatus for manufacturing a phosphor thin film according to a first embodiment of the present invention.

FIG. 3 is an X-ray diffraction pattern of a phosphor thin film.

FIG. 4 shows EL characteristics of a phosphor thin film.

FIG. 5 is an EL spectrum of a phosphor thin film.

FIG. 6 is a conceptual diagram showing a phosphor thin film manufacturing apparatus according to a second embodiment of the present invention.

FIG. 7 is a sectional view of a thin-film EL panel according to a third embodiment of the present invention.

[Description of Signs] 1 Glass 2 Transparent electrode 3 Lower insulating film 4 Substrate 5 Phosphor thin film 6 Upper insulating film 7 Back electrode 8 Sputter target 9 Sputter gas 10 Gas introduction valve 11 High frequency power supply 12 Insulator 13 Vacuum tank 14 Main valve 15 Oil diffusion pump 16 Oil rotary pump 17 H ₂ S gas cylinder 18 Sr metal 19 In metal 20 EuCl ₃ compound powder 21 Red phosphor thin film 22 Green phosphor thin film 23 Blue phosphor thin film

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H05B 33/14 C09K 11/00 G09F 9/30 365

Claims (5)

(57) [Claims] 1. A phosphor thin film mainly comprising a compound represented by the structural formula of AB ₂ C ₄ : Re, wherein A is M
g is at least one element selected from g, Ca, Sr, Ba, Eu and Yb, wherein B is a combination of Ga and at least one element selected from In and Al.
A phosphor element , wherein C is at least one element selected from S and Se, and Re is a rare earth additive. _2. A phosphor thin film mainly comprising a compound represented by a structural formula of AB ₂ C ₄ : Re, wherein A is M
g, at least one element selected from Ca, Sr, Ba, Eu and Yb, B is at least one element selected from In and Al , and C is at least one selected from S and Se. A phosphor thin film, which is one of the elements, wherein the Re is a rare earth additive; 3. Re is a small amount selected from Eu and Ce.
3. The phosphor according to claim 1, which is at least one element.
Thin film. 4. A is Sr, B is In, and C is
4. The device according to claim 3, wherein S is S and Re is Eu.
The phosphor thin film according to the above. 5. A phosphor thin film according to claim 1
Thin film EL panel.