JP2830520B2 - Method of manufacturing bonding wire for semiconductor device - Google Patents
Method of manufacturing bonding wire for semiconductor deviceInfo
- Publication number
- JP2830520B2 JP2830520B2 JP3179986A JP17998691A JP2830520B2 JP 2830520 B2 JP2830520 B2 JP 2830520B2 JP 3179986 A JP3179986 A JP 3179986A JP 17998691 A JP17998691 A JP 17998691A JP 2830520 B2 JP2830520 B2 JP 2830520B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding wire
- bonding
- semiconductor device
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/4851—Morphology of the connecting portion, e.g. grain size distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＩＣ，ＬＳＩ等の半導
体素子のチップ電極と外部リードとを接続するために用
いられる半導体装置用ボンディングワイヤの製造方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a bonding wire for a semiconductor device used for connecting a chip electrode of a semiconductor element such as an IC or an LSI to an external lead.
【０００２】[0002]
【従来の技術】従来、ＩＣ，ＬＳＩ等の半導体素子（チ
ップ）が組み込まれた半導体装置の組立工程において、
半導体素子と外部リードとを接続する場合、一般に金属
細線（ボンディングワイヤ）を半導体素子と外部リード
とにボンディングする方法が用いられている。2. Description of the Related Art Conventionally, in the process of assembling a semiconductor device in which a semiconductor element (chip) such as an IC or LSI is incorporated,
When connecting a semiconductor element and an external lead, a method of bonding a thin metal wire (bonding wire) to the semiconductor element and the external lead is generally used.
【０００３】上記のボンディングワイヤとしては、通
常、金線、金合金線、アルミニウム線等の細線が好適に
用いられており、一部ではあるが銅細線が用いられるこ
ともある。As the above-mentioned bonding wires, fine wires such as gold wires, gold alloy wires, aluminum wires and the like are usually suitably used, and in some cases, copper thin wires may be used.
【０００４】特に、金細線または金合金細線からなるボ
ンディングワイヤは、ボンディングする場合に、該ボン
ディングワイヤの硬度があまり高くなく、またこのボン
ディングワイヤの先端部に形成されるボールが容易に真
球状になるために、半導体素子やこの素子上のチップ電
極を損傷することがなく確実に接続することができ、ま
た、マイグレーションの恐れがなく、耐食性、安定性に
極めて優れているために信頼性が非常に高く、半導体装
置用としてのボンディングワイヤの使用量の大部分を占
めている。[0004] In particular, a bonding wire made of a fine gold wire or a fine gold alloy wire does not have a very high hardness when bonding, and the ball formed at the tip of the bonding wire can easily be formed into a true spherical shape. Therefore, the semiconductor element and the chip electrode on the element can be securely connected without being damaged. In addition, there is no danger of migration, and the reliability is extremely high because of extremely excellent corrosion resistance and stability. And the majority of the amount of bonding wires used for semiconductor devices.
【０００５】上記のボンディングワイヤにおいては、先
端部のボール直上のネック部分である熱影響部の強度が
十分でないために、自動ボンダ装置を用いてボンディン
グする際に断線し易く、また、断線しない場合でも樹脂
封止時に断線したりあるいはワイヤー流れによりショー
トを引き起こしたり等の問題があり、金細線または金合
金細線に微量の元素を添加して破断強度、破断伸び、耐
熱性等を向上させたボンディングワイヤが提案され実用
に供されている。[0005] In the above-mentioned bonding wire, the strength of the heat-affected zone, which is the neck portion directly above the ball at the tip end portion, is insufficient, so that the wire is easily broken when bonding using an automatic bonder device. However, there are problems such as disconnection during resin encapsulation or short-circuits caused by wire flow. Bonding that improves the breaking strength, breaking elongation, heat resistance, etc. by adding a trace element to a fine gold wire or gold alloy wire Wires have been proposed and put into practical use.
【０００６】例えば、破断伸びは、ボンディングワイヤ
として用いられる金または金合金細線の場合では、２〜
１０％の範囲のものが一般的である。このボンディング
ワイヤにおいては、熱影響部の強度が確保でき、断線等
の不具合も低減することができる。[0006] For example, the breaking elongation is 2 to 2 in the case of gold or gold alloy thin wire used as a bonding wire.
Those in the range of 10% are common. In this bonding wire, the strength of the heat-affected zone can be secured, and defects such as disconnection can be reduced.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記の
ボンディングワイヤであっても、現在の半導体の集積
化、多ピン化、狭ピッチ化の進歩に追随するには不十分
であった。However, even the above-mentioned bonding wires are not sufficient to keep up with the current progress of semiconductor integration, multi-pin structure, and narrow pitch.
【０００８】例えば、従来では１００μｍ程度まで許容
されていたボンディングワイヤの曲がりも最近では５０
μｍ以下に押える様要求されているが、金細線または金
合金細線に微量の元素を添加するだけでは、近年の高速
ボンダに対する追随性が悪く、ボンディングの際にボン
ディングワイヤがたれたり湾曲したり等の不具合が発生
することとなり、ひいては半導体素子やリードフレーム
との接続不良の一因となる。また、ボンディングワイヤ
同士の接触による不具合もあり、半導体装置の歩留まり
を低下させる主要因になっていた。For example, the bending of a bonding wire, which was conventionally allowed up to about 100 μm, has recently been reduced to 50 μm.
Although it is required to keep the thickness to less than μm, simply adding a small amount of element to a fine gold wire or gold alloy wire is not good enough to follow recent high-speed bonders, and the bonding wire may sag or bend during bonding. This causes a failure in connection with a semiconductor element or a lead frame. In addition, there is a problem due to contact between bonding wires, which has been a main factor in lowering the yield of semiconductor devices.
【０００９】本発明は、上記の事情に鑑みてなされたも
のであり、以上の問題点を有効に解決することができる
半導体装置用ボンディングワイヤの製造方法を提供する
ことを目的とするものである。 [0009] The present invention has been made in view of the above circumstances, it is an object to provide a method of manufacturing a bonding wire for semiconductor device capable of effectively solving the above problems .
【００１０】[0010]
【課題を解決するための手段】上記課題を解決するため
に、この発明は次の様な半導体装置用ボンディングワイ
ヤの製造方法を採用した。 In order to solve the above problems, the present invention provides a bonding wire for a semiconductor device as described below.
YA manufacturing method was adopted.
【００１１】[0011]
【００１２】本発明に係る請求項１記載の半導体装置用
ボンディングワイヤの製造方法は、金細線または金合金
細線の原料を溶融・鋳造し、その後圧延、伸線加工、焼
鈍する半導体装置用ボンディングワイヤの製造方法にお
いて、前記伸線加工は１０℃以下の水浴中にて行うこと
に特徴がある。According to a first aspect of the present invention, there is provided a method of manufacturing a bonding wire for a semiconductor device, comprising melting and casting a raw material of a fine gold wire or a fine gold alloy wire, and thereafter rolling, drawing and annealing. Is characterized in that the wire drawing is performed in a water bath at 10 ° C. or lower.
【００１３】[0013]
【００１４】また、請求項２記載の半導体装置用ボンデ
ィングワイヤの製造方法は、金細線または金合金細線の
原料を溶融・鋳造し、その後圧延、伸線加工、焼鈍する
半導体装置用ボンディングワイヤの製造方法において、
前記伸線加工は１０℃以下の水浴中にて行い、前記焼鈍
は連続焼鈍とすることに特徴がある。According to a second aspect of the present invention, there is provided a method of manufacturing a bonding wire for a semiconductor device, comprising melting and casting a raw material of a fine gold wire or a gold alloy wire, and thereafter rolling, drawing and annealing. In the method,
The wire drawing is performed in a water bath of 10 ° C. or less, and the annealing is characterized by continuous annealing.
【００１５】[0015]
【作用】本発明の発明者らは、前記の課題を解決するた
めに金細線または金合金細線からなるボンディングワイ
ヤの諸特性に関し鋭意研究を重ねた結果、次のような知
見を得た。The inventors of the present invention have conducted intensive studies on various characteristics of a bonding wire made of a fine gold wire or a fine gold alloy wire in order to solve the above-mentioned problems, and have obtained the following findings.
【００１６】２５μｍ径のボンディングワイヤを用いた
場合、該ボンディングワイヤの常温（２５℃）における
破断強度が５００ｋｇ／ｃｍ2未満（破断加重に換算す
ると１０ｇ未満）では、高速ボンダに対する追随性が悪
く、ボンディングワイヤの断線の発生率が高くなる。し
たがって、前記ボンディングワイヤの常温（２５℃）に
おける破断強度は５００ｋｇ／ｃｍ2以上（破断加重に
換算すると１０ｇ以上）とすることが望ましい。When a bonding wire having a diameter of 25 μm is used, if the breaking strength of the bonding wire at room temperature (25 ° C.) is less than 500 kg / cm 2 (less than 10 g in terms of breaking load), the ability to follow a high-speed bonder is poor. The occurrence rate of disconnection of the bonding wire increases. Therefore, the breaking strength of the bonding wire at room temperature (25 ° C.) is desirably 500 kg / cm 2 or more (10 g or more in terms of breaking load).
【００１７】また、前記ボンディングワイヤの高温（２
５０℃）における破断強度が４００ｋｇ／ｃｍ2未満
（破断加重に換算すると８ｇ未満）では、ボンディング
時に断線しない場合でも樹脂封止時にワイヤー流れを起
こしショートの発生率が高くなる。したがって、前記ボ
ンディングワイヤの高温（２５０℃）における破断強度
は４００ｋｇ／ｃｍ2以上（破断加重に換算すると８ｇ
以上）とすることが望ましい。Also, the high temperature (2
When the breaking strength at 50 ° C.) is less than 400 kg / cm 2 (less than 8 g in terms of breaking load), even if the wire is not broken during bonding, a wire flows at the time of resin sealing, and the occurrence rate of short circuit increases. Therefore, the breaking strength of the bonding wire at a high temperature (250 ° C.) is 400 kg / cm 2 or more (8 g in terms of breaking load).
Above).
【００１８】また、前記ボンディングワイヤの常温（２
５℃）における破断伸びが７％未満では十分に曲がりの
発生を抑制することができず、また、１０％を越えると
曲がりやたれの発生率が大幅に増加する。したがって、
前記ボンディングワイヤの常温（２５℃）における破断
伸びは７％以上１０％以下とすることが望ましい。Further, the bonding wire is at room temperature (2.
If the elongation at break at 5 ° C.) is less than 7%, the occurrence of bending cannot be sufficiently suppressed, and if it exceeds 10%, the rate of occurrence of bending and sagging increases significantly. Therefore,
The elongation at break of the bonding wire at normal temperature (25 ° C.) is desirably 7% or more and 10% or less.
【００１９】また、前記ボンディングワイヤの結晶粒の
大きさが１０μｍ以上では、該ボンディングワイヤを用
いて高速ボンディングする際に、該ボンディングワイヤ
をスパークすることにより先端部に生じるボールの直上
のネック部分である熱影響部の断線の発生率が高くな
る。したがって、前記ボンディングワイヤの結晶粒の大
きさは１０μｍ以下とすることが望ましい。When the size of the crystal grains of the bonding wire is 10 μm or more, when the bonding wire is used for high-speed bonding, the neck portion immediately above the ball generated at the tip by sparking the bonding wire is formed. The occurrence rate of disconnection of a certain heat-affected zone increases. Therefore, it is desirable that the crystal grains of the bonding wire have a size of 10 μm or less.
【００２０】[0020]
【００２１】請求項１記載の半導体装置用ボンディング
ワイヤの製造方法では、金細線または金合金細線の原料
を溶融・鋳造し、その後圧延、伸線加工、焼鈍する半導
体装置用ボンディングワイヤの製造方法において、前記
伸線加工を１０℃以下の水浴中にて行うことにより、金
または金合金よりなる細線をスパークしてボール形成し
た時の、ネック直上から５０μｍ以内の平均結晶粒の大
きさを１０μｍ以下に制御する。According to a first aspect of the present invention, there is provided a method for manufacturing a bonding wire for a semiconductor device, comprising melting and casting a raw material of a fine gold wire or a fine gold alloy wire, and thereafter rolling, drawing and annealing. By performing the wire drawing in a water bath of 10 ° C. or less, when sparking a fine wire made of gold or a gold alloy to form a ball, the average crystal grain size within 50 μm immediately above the neck is reduced to 10 μm or less. To control.
【００２２】[0022]
【００２３】[0023]
【００２４】また、請求項２記載の半導体装置用ボンデ
ィングワイヤの製造方法では、金細線または金合金細線
の原料を溶融・鋳造し、その後圧延、伸線加工、焼鈍す
る半導体装置用ボンディングワイヤの製造方法におい
て、前記伸線加工を１０℃以下の水浴中にて行うことに
より、金または金合金よりなる細線をスパークしてボー
ル形成した時の、ネック直上から５０μｍ以内の平均結
晶粒の大きさを１０μｍ以下に制御する。According to a second aspect of the present invention, there is provided a method of manufacturing a bonding wire for a semiconductor device, comprising melting and casting a raw material of a fine gold wire or a fine gold alloy wire, and thereafter rolling, drawing and annealing. In the method, the wire drawing is performed in a water bath of 10 ° C. or less, so that when a fine wire made of gold or a gold alloy is sparked to form a ball, the average crystal grain size within 50 μm immediately above the neck is reduced. Control to 10 μm or less.
【００２５】また、前記焼鈍を連続焼鈍とすることによ
り、前記細線の２５℃における破断伸びを７％以上１０
％以下に制御する。Further, by making the annealing a continuous annealing, the elongation at break of the fine wire at 25 ° C. is 7% or more and 10% or more.
%.
【００２６】[0026]
【実施例】以下、本発明の一実施例について説明する。An embodiment of the present invention will be described below.
【００２７】本実施例のボンディングワイヤは、下記の
方法により製造した。The bonding wire of this embodiment was manufactured by the following method.
【００２８】まず、表１に示す組成となるようにボンデ
ィングワイヤの原料を所定量秤量し、これらの原料を溶
解法により溶融したのちに鋳造し、Ａｕ合金とした。First, a predetermined amount of a bonding wire material was weighed so as to have a composition shown in Table 1, and the material was melted by a melting method and then cast to obtain an Au alloy.
【００２９】[0029]
【表１】 [Table 1]
【００３０】次に、これらのＡｕ合金を圧延し、その後
１０℃以下の水浴中において所定の線径（ここでは２５
μｍ）に伸線加工した。ここでは、線径３０μｍの金合
金細線を線径２５μｍまで伸線加工する際の減面率を２
％以下とした。Next, these Au alloys are rolled, and then, in a water bath of 10 ° C. or lower, a predetermined wire diameter (here, 25 ° C.).
μm). Here, the area reduction rate when a gold alloy thin wire having a wire diameter of 30 μm is drawn to a wire diameter of 25 μm is 2%.
% Or less.
【００３１】その後、所定の雰囲気中（ここでは不活性
雰囲気中）において所定の温度（ここでは６００℃）で
連続焼鈍して破断伸びが７〜１０％の金合金細線とし
た。最後に、この焼鈍された金合金細線をボンディング
スプ−ルに巻取り、ボンディングワイヤとした。Thereafter, continuous annealing was performed at a predetermined temperature (here, 600 ° C.) in a predetermined atmosphere (here, in an inert atmosphere) to obtain a gold alloy thin wire having a breaking elongation of 7 to 10%. Finally, the annealed gold alloy thin wire was wound around a bonding spool to form a bonding wire.
【００３２】表２は、上記実施例のボンディングワイヤ
の特性（実施例）と、従来のボンディングワイヤの特性
（比較例）とを、比較したものである。Table 2 compares the characteristics of the bonding wire of the above embodiment (Example) with the characteristics of a conventional bonding wire (Comparative Example).
【００３３】[0033]
【表２】 [Table 2]
【００３４】表２から明らかな様に、この発明のボンデ
ィングワイヤでは、５０μｍ以上の曲がりの発生が全く
なく、また、ボンディング時のワイヤの断線や樹脂封止
後のショートの発生もなく、比較例と比べて特性が大幅
に改善されていることが明白である。As is clear from Table 2, the bonding wire of the present invention did not have any bending of 50 μm or more, did not break the wire at the time of bonding, and did not generate a short circuit after resin sealing. It is evident that the properties are greatly improved compared to.
【００３５】以上説明した様に、上記実施例のボンディ
ングワイヤによれば、２５℃における破断強度が５００
ｋｇ／ｃｍ2以上（破断加重に換算すると１０ｇ以
上）、かつ、２５０℃における破断強度が４００ｋｇ／
ｃｍ2以上（破断加重に換算すると８ｇ以上）であるこ
ととしたので、前記ボンディングワイヤの断線を無くす
ことができ、高速ボンダに対する追随性が改善される。
また、樹脂封止時にワイヤー流れを起こすこともなくな
り、ショート等の発生も無くなる。As described above, according to the bonding wire of the above embodiment, the breaking strength at 25 ° C. is 500
kg / cm 2 or more (10 g or more in terms of breaking load) and a breaking strength at 250 ° C. of 400 kg / cm 2.
cm 2 or more (8 g or more in terms of breaking load), the breaking of the bonding wire can be eliminated, and the followability to a high-speed bonder is improved.
In addition, wire flow does not occur at the time of resin sealing, and occurrence of short circuit and the like is also eliminated.
【００３６】また、前記ボンディングワイヤの２５℃に
おける破断伸びが７％以上１０％以下であることとした
ので、前記ボンディングワイヤにおける曲がりやたれの
発生率を大幅に低下させることができる。Further, since the breaking elongation at 25 ° C. of the bonding wire is 7% or more and 10% or less, the occurrence rate of bending and sagging in the bonding wire can be greatly reduced.
【００３７】また、前記ボンディングワイヤの結晶粒の
大きさが１０μｍ以下であることとしたので、前記ボン
ディングワイヤの熱影響部の断線を防止することができ
る。Since the size of the crystal grains of the bonding wire is 10 μm or less, disconnection of the heat-affected zone of the bonding wire can be prevented.
【００３８】以上により、断線やショート等の不具合が
なく、また高速ボンダに対する追随性が改善され、ボン
ディング時に曲がりやたれ等の不具合が生じない等の特
徴を有するボンディングワイヤを提供することが可能に
なる。As described above, it is possible to provide a bonding wire having characteristics such as no break such as disconnection or short circuit, improved followability to a high-speed bonder, and no problems such as bending or sagging during bonding. Become.
【００３９】[0039]
【００４０】[0040]
【発明の効果】以上説明したように、本発明の請求項１
記載の半導体装置用ボンディングワイヤの製造方法によ
れば、金細線または金合金細線の原料を溶融・鋳造し、
その後圧延、伸線加工、焼鈍する半導体装置用ボンディ
ングワイヤの製造方法において、前記伸線加工は１０℃
以下の水浴中にて行うこととしたので、前記細線をスパ
ークしてボール形成した時の、ネック直上から５０μｍ
以内の平均結晶粒の大きさを１０μｍ以下に制御するこ
とができる。As described above, according to the first aspect of the present invention,
According to the manufacturing method of the semiconductor device bonding wire according to melt-cast material of thin gold wires or gold alloy fine wire,
In a method of manufacturing a bonding wire for a semiconductor device which is subsequently rolled, drawn, and annealed, the drawing is performed at 10 ° C.
Since it was performed in the following water bath, when the fine wire was sparked to form a ball, 50 μm from directly above the neck
The average crystal grain size within the range can be controlled to 10 μm or less.
【００４１】[0041]
【００４２】[0042]
【００４３】また、請求項２記載の半導体装置用ボンデ
ィングワイヤの製造方法によれば、金細線または金合金
細線の原料を溶融・鋳造し、その後圧延、伸線加工、焼
鈍する半導体装置用ボンディングワイヤの製造方法にお
いて、前記伸線加工は１０℃以下の水浴中にて行うこと
としたので、前記細線をスパークしてボール形成した時
の、ネック直上から５０μｍ以内の平均結晶粒の大きさ
を１０μｍ以下に制御することができる。また、前記焼
鈍は連続焼鈍とすることとしたので、前記細線の２５℃
における破断伸びを７％以上１０％以下に制御すること
ができる。[0043] Further, according to the manufacturing method of the semiconductor device bonding wire according to claim 2, melting and casting the raw materials of the thin gold wires or gold alloy fine wire, then rolling, wire drawing, the bonding wire for a semiconductor device to anneal In the manufacturing method of the above, since the wire drawing is performed in a water bath of 10 ° C. or less, when the fine wire is sparked to form a ball, the average crystal grain size within 50 μm immediately above the neck is reduced to 10 μm. The following can be controlled. Further, since the annealing was performed by continuous annealing, the temperature of the fine wire was 25 ° C.
Can be controlled to 7% or more and 10% or less.
【００４４】[0044]
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭54−98174（ＪＰ，Ａ) 特開 平４−115542（ＪＰ，Ａ) 特開 平３−257837（ＪＰ，Ａ) 特開 平４−15930（ＪＰ，Ａ) 特開 昭62−290835（ＪＰ，Ａ) 特開 昭64−4441（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/60 301 B21C 1/00 B21C 9/00──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-54-98174 (JP, A) JP-A-4-115542 (JP, A) JP-A-3-257837 (JP, A) JP-A-4- 15930 (JP, A) JP-A-62-290835 (JP, A) JP-A-64-4441 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) H01L 21/60 301 B21C 1/00 B21C 9/00
Claims (2)
鋳造し、その後圧延、伸線加工、焼鈍する半導体装置用
ボンディングワイヤの製造方法において、 前記伸線加工は１０℃以下の水浴中にて行うことを特徴
とする半導体装置用ボンディングワイヤの製造方法。 1. A method for melting a raw material of a gold fine wire or a gold alloy fine wire.
A method for producing a bonding wire for a semiconductor device, which is cast, then rolled, drawn, and annealed, wherein the drawing is performed in a water bath at 10 ° C. or lower.
鋳造し、その後圧延、伸線加工、焼鈍する半導体装置用
ボンディングワイヤの製造方法において、 前記伸線加工は１０℃以下の水浴中にて行い、前記焼鈍
は連続焼鈍とすることを特徴とする半導体装置用ボンデ
ィングワイヤの製造方法。 2. A method for melting a raw material of a gold fine wire or a gold alloy fine wire.
In a method for manufacturing a bonding wire for a semiconductor device, which is cast, then rolled, drawn, and annealed, the drawing is performed in a water bath of 10 ° C. or less, and the annealing is continuous annealing. A method for manufacturing a bonding wire for a device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3179986A JP2830520B2 (en) | 1991-07-19 | 1991-07-19 | Method of manufacturing bonding wire for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3179986A JP2830520B2 (en) | 1991-07-19 | 1991-07-19 | Method of manufacturing bonding wire for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0582576A JPH0582576A (en) | 1993-04-02 |
| JP2830520B2 true JP2830520B2 (en) | 1998-12-02 |
Family
ID=16075461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3179986A Expired - Fee Related JP2830520B2 (en) | 1991-07-19 | 1991-07-19 | Method of manufacturing bonding wire for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2830520B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005268771A (en) * | 2004-02-20 | 2005-09-29 | Nippon Steel Corp | Gold bonding wire for semiconductor device and connection method thereof |
| JP2006324553A (en) | 2005-05-20 | 2006-11-30 | Renesas Technology Corp | Semiconductor device and method of manufacturing same |
| EP3890010A1 (en) * | 2020-04-02 | 2021-10-06 | Mitsubishi Electric R & D Centre Europe B.V. | Method and device for increasing the reliability of a power module |
-
1991
- 1991-07-19 JP JP3179986A patent/JP2830520B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0582576A (en) | 1993-04-02 |
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