JP2795688B2 - Perpendicular magnetization film - Google Patents
Perpendicular magnetization filmInfo
- Publication number
- JP2795688B2 JP2795688B2 JP1188256A JP18825689A JP2795688B2 JP 2795688 B2 JP2795688 B2 JP 2795688B2 JP 1188256 A JP1188256 A JP 1188256A JP 18825689 A JP18825689 A JP 18825689A JP 2795688 B2 JP2795688 B2 JP 2795688B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- perpendicular magnetization
- substitution
- amount
- ferrite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、垂直磁化異方性を有し、垂直磁気記録、光
磁気記録媒体等に使用される酸化物垂直磁化膜に関す
る。The present invention relates to an oxide perpendicular magnetization film having perpendicular magnetization anisotropy and used for perpendicular magnetic recording, a magneto-optical recording medium and the like.
(従来の技術) 高密度記録の可能な新しい磁気記録方式として、垂直
磁気記録と光磁気記録が研究されている。これらの記録
方式に用いられる媒体は、膜の垂直方向に磁気異方性を
備えた垂直磁化膜を使用する必要がある。(Prior Art) Perpendicular magnetic recording and magneto-optical recording are being studied as new magnetic recording methods capable of high-density recording. It is necessary to use a perpendicular magnetization film having magnetic anisotropy in the direction perpendicular to the film as a medium used in these recording methods.
特開昭61−111511号公報において、コバルトフェライ
トのCoまたはFeの一部をMnやAl等の非磁性原子で置換す
ることにより、飽和磁化Msを小さくして垂直磁化膜とす
るものが開示されている。また、光磁気記録媒体の場
合、従来の希土類−遷移金属系とは異なり、耐酸性およ
び大きな磁気光学効果を有するコバルトフェライト系ス
ピネル薄膜等が報告されている。Japanese Patent Application Laid-Open No. 61-111511 discloses a perpendicular ferrite film in which the saturation magnetization Ms is reduced by replacing a part of Co or Fe of cobalt ferrite with a non-magnetic atom such as Mn or Al. ing. Further, in the case of a magneto-optical recording medium, a cobalt ferrite spinel thin film having acid resistance and a large magneto-optical effect, which is different from a conventional rare earth-transition metal system, has been reported.
(発明が解決しようとする課題) しかし、コバルトフェライトは本来等方的な材料であ
るため、Ku⊥≧2πMs2(Ku⊥は垂直異方性定数、Msは
飽和磁化)、あるいはHc⊥>Hc(Hc⊥は垂直方向の保
磁力、Hcは面内方向の保磁力)、SQ⊥>SQ(SQ⊥は
垂直方向の角形比=Br/Bm、SQは面内方向の角形比)
が得られにくく、垂直磁化膜となりにくいという問題点
があった。(Problems to be Solved by the Invention) However, since cobalt ferrite is originally an isotropic material, Ku⊥ ≧ 2πMs 2 (Ku⊥ is a perpendicular anisotropy constant, Ms is a saturation magnetization), or Hc⊥> Hc (Hc⊥ the vertical coercive force, Hc in-plane direction of the coercive force), SQ⊥> SQ (SQ⊥ the vertical squareness ratio = B r / B m, SQ is the in-plane direction squareness ratio)
And it is difficult to obtain a perpendicular magnetization film.
本発明は、上記従来技術の問題点に鑑み、良好な垂直
磁気異方性を有する垂直磁化膜を提供することを目的と
する。An object of the present invention is to provide a perpendicular magnetization film having good perpendicular magnetic anisotropy in view of the above-mentioned problems of the related art.
(課題を達成するための手段) 上記の目的を達成するため、本発明の垂直磁化膜は、
CoxFe3-x-yCuyO4で示され、かつx、yの値の範囲0.5≦
x≦2.0、0<y<0.4であることを特徴とする。(Means for Achieving the Object) In order to achieve the above object, the perpendicular magnetization film of the present invention comprises:
Co x Fe 3-xy Cu y O 4 and the range of values of x and y 0.5 ≦
It is characterized by x ≦ 2.0 and 0 <y <0.4.
(作用) 上述の組成とすることにより、すなわち、CoまたはFe
をCuで置換することにより、Hc⊥/Hc、SQ⊥/SQが向
上し、膜の垂直性が良くなる。(Action) By the above composition, that is, Co or Fe
Is replaced by Cu, Hc⊥ / Hc and SQ⊥ / SQ are improved, and the perpendicularity of the film is improved.
Cu置換量であるyの値は0.4未満でなければ、ファラ
デー回転角が小さくなる。また、Coの量であるxの量を
前述の範囲とした理由は、この範囲を外れると、やはり
ファラデー回転角が小さくなるためである。If the value of y as the Cu substitution amount is not less than 0.4, the Faraday rotation angle becomes small. The reason for setting the amount of x, which is the amount of Co, to the above-described range is that if the amount is out of this range, the Faraday rotation angle also becomes small.
(実施例) 実施例として、Co1.2Fe1.6Cu0.2O4で表わされるCu置
換Coフェライト垂直磁化膜に例をとって説明する。(Example) As an example, a Cu-substituted Co ferrite perpendicular magnetization film represented by Co 1.2 Fe 1.6 Cu 0.2 O 4 will be described as an example.
所望の組成となるように、CoO、Fe2O3、CuOの粉末を
調合し、ボールミルで20時間粉砕した後、800℃で3時
間、空気中で仮焼した。Powders of CoO, Fe 2 O 3 , and CuO were prepared so as to have a desired composition, pulverized by a ball mill for 20 hours, and then calcined at 800 ° C. for 3 hours in the air.
仮焼後、再びボールミルで20時間粉砕した後、乾燥さ
せ、バインダーとしてのポリビニルアルコールと混練
し、プレス成形した。After calcining, the mixture was ground again with a ball mill for 20 hours, dried, kneaded with polyvinyl alcohol as a binder, and press-molded.
成形後、1050℃で3時間、空気中で熱処理し、多結晶
状のCoフェライトで直径が約10cmの円盤状焼結体を得、
この焼結体をCuバッキングプレートにボンディング加工
し、ターゲットとした。After molding, heat treatment in air at 1050 ° C for 3 hours to obtain a disc-shaped sintered body of polycrystalline Co ferrite with a diameter of about 10cm.
This sintered body was bonded to a Cu backing plate to obtain a target.
高周波スパッタリング装置にコーニング社製ガラス基
板であるコーニング7059を取付け、装置内を6.5×10-5P
aまで排気した後、装置内にArガスを7Pa程度になるまで
導入した。Corning 7059, a glass substrate manufactured by Corning, was attached to the high frequency sputtering device, and the inside of the device was 6.5 × 10 -5 P
After evacuation to a, Ar gas was introduced into the apparatus until the pressure became about 7 Pa.
その後、基板とターゲットとの間に所定の高周波電圧
を印加してグロー放電を開始し、放電により生じたAr+
で前記ターゲット表面をスパッタし、基板上にCo1.2Fe
1.6Cu0.2O4膜を作成した。この時の基板温度は300℃と
し、投入電力は2.2W/cm2とし、また、膜厚が0.5μmと
なる所定の時間スパッタした。Thereafter, a predetermined high-frequency voltage is applied between the substrate and the target to start glow discharge, and the Ar +
Sputter the target surface with Co 1.2 Fe on the substrate
1.6 Cu 0.2 O 4 film was prepared. At this time, the substrate temperature was set to 300 ° C., the input power was set to 2.2 W / cm 2, and sputtering was performed for a predetermined time so that the film thickness became 0.5 μm.
この膜をガラス基板と共に600℃で3時間、空気中で
熱処理し、結晶化を進めた。This film was heat-treated together with a glass substrate at 600 ° C. for 3 hours in air to promote crystallization.
作成した膜の結晶性をX線回析で調べた結果、成膜後
も熱処理後も(311)方向のピークが強い多結晶であっ
た。As a result of examining the crystallinity of the formed film by X-ray diffraction, it was found that the polycrystal had a strong peak in the (311) direction both after film formation and after heat treatment.
膜面内()および膜垂直(⊥)方向の磁化特性を振
動式磁力計(VSM)で測定した結果、直直方向の力が保
磁力Hcおよび角形比SQが大きく、この膜が垂直磁化膜で
あることがわかる。As a result of measuring the magnetization characteristics in the in-plane () and perpendicular (⊥) directions with a vibrating magnetometer (VSM), the force in the perpendicular direction has a large coercive force Hc and a large squareness ratio SQ. It can be seen that it is.
第1図はこの膜のB−Hヒステリシスループであり、
⊥は垂直方向、は面内方向を示している。また、比較
のため、Cuで置換していないCoフェライトであるCo1.4F
e1.6O4のB−Hヒステリシスループを第2図に示す。第
1図から分かるように、Cuで一部置換したものは、垂直
方向の方が面内方向よりHc、SQともに大きく、ループの
角形性も良好であり、垂直磁化膜となっている。一方、
第2図のCuで置換したものは、垂直方向の面と面内方向
のHc、SQともほとんど同じであり、ループの角形性も悪
く、垂直磁化膜となっていない。FIG. 1 is a BH hysteresis loop of this film,
⊥ indicates a vertical direction, and indicates an in-plane direction. For comparison, Co 1.4 F, which is a Co ferrite not substituted with Cu, is used.
The BH hysteresis loop of e 1.6 O 4 is shown in FIG. As can be seen from FIG. 1, the one partially replaced by Cu has both Hc and SQ greater in the vertical direction than in the in-plane direction, has good loop squareness, and is a perpendicular magnetization film. on the other hand,
In FIG. 2, the material replaced with Cu has almost the same Hc and SQ in the vertical direction and the in-plane direction, has poor squareness of the loop, and is not a perpendicular magnetization film.
同様に前記組成のCuで一部置換したCoフェライトと、
Cuで置換していないCoフェライトの630nmの波長におけ
るファラデーループを測定した結果をそれぞれ第3図、
第4図に示す。第3図と第4図との対比から分かるよう
に、Cu置換したファラデーループの角形比(θFr/
θFS)が大きく、光磁気記録媒体として使用可能であ
る。Similarly, Co ferrite partially substituted by Cu of the above composition,
FIG. 3 shows the results of measuring the Faraday loop at a wavelength of 630 nm of Co ferrite not replaced by Cu, respectively.
As shown in FIG. As can be seen from the comparison between FIG. 3 and FIG. 4, the squareness ratio (θ Fr /
θ FS ) is large and can be used as a magneto-optical recording medium.
[Cu置換量と特性との関係] Co1.6Fe1.4O4を基準組成とし、このうち、Coの一部を
Cuで置換したCo1.6−xFe1.4CuxO4について、置換量x
を変えて垂直方向の保磁力Hc⊥、飽和磁化Ms、ファラデ
ー回転角θF、垂直方向と面内方向の保磁力の比Hc⊥/H
c、角形比SQ⊥/SQ、ファラデーループの角形比θFr
/θFSを測定、算出した。なおファラデー回転角は波長6
30nmで測定した。その結果を表1に示す。なお、表1
は、その最下段(試料No6)に、Coでなく、Feの一部をC
uで置換した例も示している。[Relationship between Cu substitution amount and properties] Co 1.6 Fe 1.4 O 4 is used as a reference composition, and a part of Co is
For Co 1.6-x Fe 1.4 Cu x O 4 substituted with Cu, the substitution amount x
By changing the coercive force Hc⊥ in the vertical direction, the saturation magnetization Ms, the Faraday rotation angle θ F , and the ratio Hc⊥ / H between the coercive force in the vertical direction and the in-plane direction.
c, Squareness ratio SQ⊥ / SQ, Faraday loop squareness ratio θ Fr
/ θ FS was measured and calculated. The Faraday rotation angle is wavelength 6
Measured at 30 nm. Table 1 shows the results. Table 1
In the bottom line (Sample No. 6), not Co but part of Fe
An example of substitution with u is also shown.
表1から分かるように、x=0.05〜0.35の範囲におい
て、Hc⊥/Hc、SQ⊥SQ、θFr/θFSがすべて向上し、
特にHc⊥/Hcの向上が顕著であることが分かる。FeにC
uを置換した場合も良好な値が得られている。As can be seen from Table 1, in the range of x = 0.05 to 0.35, Hc⊥ / Hc, SQ⊥SQ, θ Fr / θ FS are all improved,
In particular, it can be seen that the improvement of Hc⊥ / Hc is remarkable. Fe to C
Good values are also obtained when u is replaced.
Coの一部をMnで置換したCo1.6−xFe1.4MnxO4につい
て、置換量xを変えた場合の前記Hc⊥/Hc、SQ⊥/SQ
およびファラーデループの角形比θFr/θFSの変化を調
べ、その結果を前記Cuで置換した場合と対比してそれぞ
れ第5図、第6図および第7図に示す。第5図ないし第
7図から分かるように、Mn置換の場合、磁化方向が面内
方向で優位となっているのに比較し、Cu置換の場合に
は、わずかな置換量で垂直磁化特性を良好にする効果が
あり、また、第5図および第6図を参照すれば、置換量
xが0.2までの範囲において、置換量が多いほどHc⊥Hc
、SQ⊥/SQが向上し、0.2〜0.4の範囲でほぼ一定に
なることが分かる。また、第7図から分かるように、θ
Fr/θFSの値は、置換量xが0.2以上で0.9以上となり、
光磁気記録媒体への応用が可能となることが分かる。For Co 1.6-x Fe 1.4 Mn x O 4 in which part of Co was replaced with Mn, the Hc⊥ / Hc and SQ⊥ / SQ when the amount of substitution x was changed.
In addition, the change in the squareness ratio θ Fr / θ FS of the Faraday loop is examined, and the results are shown in FIGS. 5, 6 and 7, respectively, in comparison with the case where the Cu is substituted. As can be seen from FIGS. 5 to 7, in the case of Mn substitution, the magnetization direction is superior in the in-plane direction, whereas in the case of Cu substitution, the perpendicular magnetization characteristics can be improved with a small amount of substitution. 5 and 6, it can be seen from FIG. 5 and FIG. 6 that the larger the substitution amount is, the larger Hc⊥Hc in the range where the substitution amount x is up to 0.2.
, SQ⊥ / SQ is improved and becomes almost constant in the range of 0.2 to 0.4. Also, as can be seen from FIG.
The value of Fr / θ FS is 0.9 or more when the substitution amount x is 0.2 or more,
It can be seen that application to a magneto-optical recording medium becomes possible.
また、表2は、Co1.2Fe1.8O4の組成のものと、この組
成において、FeについてCu置換量を変えた場合(試料No
=7〜10)の前記各値を示し、また、Feの量を前記1.8
程度にしてCoについてCuの置換量を変えた場合(試料No
=11、12)の前記各値を示す。表2から分かるように、
Cu置換によりHc⊥/Hc、SQ⊥/SQ等が向上したが、試
料No10のように、Cu置換量が0.5になると、θFおよびS
Q⊥/SQが低下する傾向が見られる。Further, Table 2 shows that the composition of Co 1.2 Fe 1.8 O 4 and the case where the Cu substitution amount for Fe was changed in this composition (Sample No.
= 7 to 10), and the amount of Fe was adjusted to 1.8
When the substitution amount of Cu for Co was changed to about
= 11, 12). As can be seen from Table 2,
Hc⊥ / Hc, SQ⊥ / SQ, etc. were improved by the Cu substitution, but when the Cu substitution amount became 0.5 as in sample No. 10, θ F and S
Q⊥ / SQ tends to decrease.
また、表3は、Co1.7Fe1.3O4の組成のものと、この組
成において、FeについてCu置換量を変えた場合(試料No
=13〜16)の前記各値を示す。試料No14のように、Cu置
換量が0.05以上になると、Hc⊥/Hc、SQ⊥/SQが向上
する。Table 3 shows that the composition of Co 1.7 Fe 1.3 O 4 and the case where the Cu substitution amount of Fe was changed in this composition (Sample No.
= 13 to 16). As in the case of sample No. 14, when the Cu substitution amount is 0.05 or more, Hc⊥ / Hc and SQ⊥ / SQ are improved.
表4および表5は、本発明との比較のため、それぞれ
CoあるいはFeの代わりにMn、Alで置換した例を示すもの
で、いずれも、これらMnまたはAlの置換により、Hc⊥/H
c、SQ⊥/SQは横ばいかあるいは低下している。Tables 4 and 5 are shown for comparison with the present invention.
This shows an example in which Mn or Al is substituted for Co or Fe, and in each case, Hc⊥ / H
c, SQ⊥ / SQ is flat or decreasing.
なお、上記実施例は、スパッタ法により膜を形成した
が、真空蒸着法、イオンプレーティング法、プラズマCV
D法等の薄膜形成技術によっても同様の効果が得られ
る。 In the above embodiment, the film was formed by the sputtering method, but the vacuum evaporation method, the ion plating method, and the plasma CV method were used.
Similar effects can be obtained by a thin film forming technique such as the D method.
(発明の効果) 本発明によれば、保磁力の比Hc⊥/Hcおよび角形比S
Q⊥/SQが向上し、良好な垂直磁気異方性を有するコバ
ルトフェライト膜が得られる。(Effects of the Invention) According to the present invention, the coercive force ratio Hc⊥ / Hc and the squareness ratio S
Q⊥ / SQ is improved, and a cobalt ferrite film having good perpendicular magnetic anisotropy can be obtained.
【図面の簡単な説明】 第1図は本発明の一実施例の組成の膜のB−Hヒステリ
シスループ図、第2図は従来のフェライトのB−Hヒス
テリシスループ図、第3図は本発明の一実施例の組成の
膜のファラデーループ図、第4図は従来のフェライトの
ファラデーループ図、第5図、第6図および第7図はCu
置換量とMn置換量に対するそれぞれ保磁力の比Hc⊥/Hc
、角形比SQ⊥/SQおよびファラデーループの角形比
θFr/θFSの値の変化を示す図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a BH hysteresis loop diagram of a film having a composition according to one embodiment of the present invention, FIG. 2 is a BH hysteresis loop diagram of a conventional ferrite, and FIG. FIG. 4 is a Faraday loop diagram of a film of a conventional ferrite, and FIGS. 5, 6, and 7 are Cu diagrams.
Ratio of coercive force to substitution amount and Mn substitution amount Hc⊥ / Hc
Is a diagram illustrating a change in the value of the squareness ratio theta Fr / theta FS squareness ratio SQ⊥ / SQ and the Faraday loop.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平2−165447(JP,A) 特開 昭63−104313(JP,A) 特開 昭63−1010(JP,A) 特開 昭60−261051(JP,A) 特開 昭60−150248(JP,A) (58)調査した分野(Int.Cl.6,DB名) H01F 10/20──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-2-165447 (JP, A) JP-A-63-104313 (JP, A) JP-A-63-1010 (JP, A) JP-A-60-160 261051 (JP, A) JP-A-60-150248 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) H01F 10/20
Claims (1)
値の範囲が0.5≦x≦2.0、0<y<0.4であることを特
徴とする垂直磁化膜。1. A Co x Fe indicated by 3-xy Cu y O 4, and x, perpendicular magnetization film, wherein the range of values of y is 0.5 ≦ x ≦ 2.0,0 <y < 0.4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1188256A JP2795688B2 (en) | 1989-07-19 | 1989-07-19 | Perpendicular magnetization film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1188256A JP2795688B2 (en) | 1989-07-19 | 1989-07-19 | Perpendicular magnetization film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0350806A JPH0350806A (en) | 1991-03-05 |
JP2795688B2 true JP2795688B2 (en) | 1998-09-10 |
Family
ID=16220504
Family Applications (1)
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---|---|---|---|
JP1188256A Expired - Lifetime JP2795688B2 (en) | 1989-07-19 | 1989-07-19 | Perpendicular magnetization film |
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JP (1) | JP2795688B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5978186A (en) * | 1996-03-14 | 1999-11-02 | Matsushita Electric Industrial Co., Ltd. | Magnetic head and reproducing apparatus with head having central core with winding thereabout and wire therethrough |
CN102465265A (en) * | 2010-11-10 | 2012-05-23 | 光洋应用材料科技股份有限公司 | Target material and its recording layer material used in magnetic recording medium |
-
1989
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