JP2780129B2 - Composite sintered body and its manufacturing method and application - Google Patents
Composite sintered body and its manufacturing method and applicationInfo
- Publication number
- JP2780129B2 JP2780129B2 JP2141316A JP14131690A JP2780129B2 JP 2780129 B2 JP2780129 B2 JP 2780129B2 JP 2141316 A JP2141316 A JP 2141316A JP 14131690 A JP14131690 A JP 14131690A JP 2780129 B2 JP2780129 B2 JP 2780129B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- sintered body
- pipe
- pattern
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002131 composite material Substances 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 102
- 239000002184 metal Substances 0.000 claims description 101
- 238000005245 sintering Methods 0.000 claims description 45
- 238000002844 melting Methods 0.000 claims description 40
- 239000000919 ceramic Substances 0.000 claims description 39
- 230000008018 melting Effects 0.000 claims description 35
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 29
- 229910052721 tungsten Inorganic materials 0.000 claims description 29
- 239000010937 tungsten Substances 0.000 claims description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 239000000843 powder Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 239000011230 binding agent Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 238000000465 moulding Methods 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 3
- 229910002482 Cu–Ni Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 239000011575 calcium Substances 0.000 claims 1
- 239000002270 dispersing agent Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 238000004898 kneading Methods 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 20
- 239000011148 porous material Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 229910052863 mullite Inorganic materials 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000007791 liquid phase Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000005470 impregnation Methods 0.000 description 5
- 239000003870 refractory metal Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 229950011008 tetrachloroethylene Drugs 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、セラミックス中に金属パイプを所定のパタ
ーンで有する複合焼結体とその製造法及び該焼結体の用
途に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite sintered body having a metal pipe in a predetermined pattern in ceramics, a method for producing the same, and uses of the sintered body.
近年、LSI等の集積回路の高速化、高密度化を図るた
めに、アルミナ、ムライト、窒化アルミニウム、ガラス
／セラミックス複合材等から成る基板が使用されてい
る。2. Description of the Related Art In recent years, substrates made of alumina, mullite, aluminum nitride, glass / ceramic composites, and the like have been used in order to increase the speed and density of integrated circuits such as LSIs.
しかし、これらの材料を用いた基板は、常圧焼結ある
いはガラス溶融焼結により作成されるために、焼結時に
15〜20％の線収縮が起り、反り等の変形も生じ易い。そ
のために、基板寸法が設計値通りのものが得られなかっ
たり、歩留りよく製造できない等の問題があった。However, since substrates made of these materials are made by normal pressure sintering or glass melt sintering,
Linear shrinkage of 15 to 20% occurs, and deformation such as warpage is likely to occur. For this reason, there have been problems such that the substrate dimensions cannot be obtained as designed, or the production cannot be performed with good yield.
上記の問題を改善するために、アルミナ粉末、硼硅酸
ガラス粉末およびアルミニウム粉末からなるグリーンシ
ートに高導電性金属ペーストを用いて配線を形成し、窒
素雰囲気中で焼成して焼成時の収縮率が比較的一定な半
導体実装用焼結基板を作成する方法（特開昭60−245152
号公報）が提案されている。In order to improve the above problem, wiring was formed using a highly conductive metal paste on a green sheet composed of alumina powder, borosilicate glass powder, and aluminum powder, and baked in a nitrogen atmosphere. For producing a sintered substrate for semiconductor mounting having a relatively constant thickness (Japanese Patent Laid-Open No.
Publication).
また、ムライト（3Al2O3・2SiO2）のグリーンシート
にスルーホールを形成し、該スルーホールの内面及びグ
リーンシートの表面に第１の高融点金属（例えばタング
ステン）ペーストを印刷して乾燥後、その上に焼結後の
ボイドが第１の高融点金属よりも多い第２の高融点金属
ペーストを重ねて印刷し、該グリーンシートを焼結後、
該焼結体の表面に露出した前記第２の高融点金属のボイ
ド中に、銅を溶融含浸する印刷配線方法（特開昭63−28
0492号公報）が提案されている。Also, a through hole is formed in a green sheet of mullite (3Al 2 O 3 .2SiO 2 ), and a first refractory metal (for example, tungsten) paste is printed on the inner surface of the through hole and the surface of the green sheet and dried. A second refractory metal paste having a void after sintering more than the first refractory metal is printed thereon, and the green sheet is sintered.
A printed wiring method for melting and impregnating copper into voids of the second refractory metal exposed on the surface of the sintered body (Japanese Patent Laid-Open No. 63-28)
No. 0492) has been proposed.
前記従来技術において、前者はアルミニウムが窒素と
反応して窒化アルミニウムとなることにより体積が増加
し、焼結時の収縮を抑制する作用があるが、硼硅酸ガラ
スを20〜70重量％（好ましくは40〜60重量％）含むため
に、焼結体全体としての線収縮率は約10％にもなり、高
密度、高精度な実装基板用として用いるには問題があ
る。In the prior art, the former has an effect of increasing the volume by reacting aluminum with nitrogen to form aluminum nitride and suppressing shrinkage at the time of sintering. ), The linear shrinkage of the sintered body as a whole is about 10%, and there is a problem in using it for a high-density, high-precision mounting substrate.
また、後者のムライトを用いる印刷配線方法は、ムラ
イトが液相焼結であるために、焼結時に該液相が多孔質
のタングステンパターン（第２の高融点金属層：多孔質
層）に滲み出して抵抗を高くするのを防止するため、前
記第１の高融点金属層（緻密質層）を、ムライト焼結体
と第２の高融点金属層（多孔質層）との間に形成しなけ
ればならないと云う問題があった。In the latter method of printing wiring using mullite, since mullite is liquid phase sintering, the liquid phase bleeds into a porous tungsten pattern (second refractory metal layer: porous layer) during sintering. The first high melting point metal layer (dense layer) is formed between the mullite sintered body and the second high melting point metal layer (porous layer) in order to prevent the resistance from increasing due to the high temperature. There was a problem that it had to be done.
このようにタングステンパターンを緻密質層と多孔質
層の２層構造にしなければならないと云うことは、製造
工程が複雑化する上に、該パターン層が厚くなり、多層
基板としては制約を受けることになるので好ましくな
い。The fact that the tungsten pattern must have a two-layer structure of a dense layer and a porous layer in this way complicates the manufacturing process and increases the thickness of the pattern layer, which restricts the multilayer substrate. Is not preferred.
また、ムライト自体の焼結を促進するために焼結助剤
の添加が必要であり、該焼結助剤により液相が生成し、
これが金属導体へ混入して導電性を低下させるという問
題も考えられる。Further, it is necessary to add a sintering aid to promote sintering of mullite itself, and a liquid phase is generated by the sintering aid,
It is also conceivable that this is mixed into the metal conductor to lower the conductivity.
前記タングステンパターンの導電性を改善するために
多孔質層に銅などの導電性物質を含浸させる場合、前記
ムライトの焼結による液相の滲出を防止するために設け
た緻密質層が、逆に多孔質層内の空気の透過を阻害する
ので、銅含浸がしにくいなどの問題がある。When impregnating the porous layer with a conductive material such as copper to improve the conductivity of the tungsten pattern, the dense layer provided to prevent the liquid phase from leaching due to sintering of the mullite, Since this impedes the permeation of air in the porous layer, there is a problem that copper impregnation is difficult.
本発明の目的は、セラミックス焼結体の表面及び／又
は内部に、高融点金属パイプ状パターンを有し、前記金
属パターン中に銅などの導電性の低融点金属の含浸が容
易にできる複合焼結体及びその製造法を提供することに
ある。An object of the present invention is to provide a composite sintered body having a high-melting metal pipe-shaped pattern on the surface and / or inside of a ceramic sintered body, wherein the metal pattern can be easily impregnated with a conductive low-melting metal such as copper. An object of the present invention is to provide a body and a method for producing the same.
また、焼結による寸法変化率が極めて小さい高密度、
高精度な記録一体型回路基板を提供することにある。In addition, the dimensional change rate due to sintering is extremely small,
An object of the present invention is to provide a high-precision recording integrated circuit board.
上記目的を達成するために、本発明では、セラミック
ス焼結体の表面及び／又は内部の少なくとも一部に、金
属パターンが形成された複合焼結体において、前記金属
パターンは前記セラミックスの焼結温度以上の融点の金
属パイプからなることを特徴とする複合焼結体としたも
のであり、また、本発明では、通気性で気孔率５〜50vo
l％のセラミックス反応焼結体の表面及び／又は内部の
少なくとも一部に、金属パターンが形成された複合焼結
体において、前記金属パターンは高融点金属と、該金属
よりも低融点の導電性金属とが一体化して形成されてお
り、該高融点金属は前記セラミックスの焼結温度以上の
融点の金属パイプからなることを特徴とする複合焼結体
としたものである。また、上記他の目的を達成するため
に、本発明では、金属及び／又は金属被覆の粉末の成形
体を作成し、該成形体の表面及び／又は内部の少なくと
も一部に、該金属及び／又は金属被覆の粉末と反応性ガ
スとの反応温度で反応しにくい金属パイプでパターンを
形成し、次いで該成形体を反応性ガス中で反応焼結する
工程を含むことを特徴とする複合焼結体の製造法とした
ものであり、更に本発明は、金属及び／又は金属被覆の
粉末の成形体を作成し、該成形体の表面及び／又は内部
の少なくとも一部に、前記金属及び／又は金属被覆の粉
末と反応性ガスとの反応温度で反応しにくい金属パイプ
でパターンを形成し、次いで該成形体を反応性ガス中で
反応焼結した後、前記金属パイプ中に該金属よりも低融
点の金属を含浸させる工程を含むことを特徴とする複合
焼結体の製造法としたものである。In order to achieve the above object, according to the present invention, in a composite sintered body in which a metal pattern is formed on at least a part of the surface and / or inside of the ceramic sintered body, the metal pattern is a sintering temperature of the ceramic. It is a composite sintered body characterized by comprising a metal pipe having the above melting point, and in the present invention, has a porosity of 5 to 50 vo
In a composite sintered body in which a metal pattern is formed on at least a part of the surface and / or inside of a ceramic reaction sintered body of 1%, the metal pattern is composed of a high melting point metal and a conductive material having a lower melting point than the metal. The high-melting-point metal is formed integrally with the metal, and the high-melting-point metal is made of a metal pipe having a melting point higher than the sintering temperature of the ceramics. In order to achieve the above and other objects, according to the present invention, a metal and / or metal-coated powder compact is prepared, and the metal and / or metal is coated on at least a part of the surface and / or inside of the compact. Or forming a pattern with a metal pipe that does not easily react at the reaction temperature between the powder of the metal coating and the reactive gas, and then subjecting the compact to reactive sintering in a reactive gas. The present invention further provides a method for producing a metal and / or metal-coated powder molded body, and forming the metal and / or metal on at least a part of the surface and / or inside of the molded body. After forming a pattern with a metal pipe that is difficult to react at the reaction temperature between the powder of the metal coating and the reactive gas, and then sintering the molded body in a reactive gas, the molded product is lower in the metal pipe than the metal. Including a step of impregnating a metal with a melting point Is obtained by the production method of the composite sintered body, characterized.
次に、本発明を詳細に説明する。 Next, the present invention will be described in detail.
本発明の複合焼結体は、常圧焼結体、HIP焼結体でも
可能であるが、特に通気性の多孔質反応焼結体（気孔率
にして５〜50％）からなり、焼結による寸法変化率は線
変化率で±５％好ましくは±３％以内の焼結体であるこ
とが好ましい。The composite sintered body of the present invention can be a normal pressure sintered body or a HIP sintered body, but is particularly preferably made of a porous reaction sintered body having a porosity of 5 to 50%. It is preferable that the sintered body has a dimensional change rate of ± 5%, preferably ± 3% or less as a linear change rate.
前記気孔は、複合焼結体の誘電率を小さくする作用が
あるので、特に信号の伝播速度が問題となる半導体実装
用回路基板として好適である。Since the pores have an effect of reducing the dielectric constant of the composite sintered body, the pores are particularly suitable as a circuit board for mounting a semiconductor in which the signal propagation speed is a problem.
ここで前記焼結体の気孔率が５％未満では、焼結体の
寸法変化率を小さくすることができない欠点が有り、50
％を超えると焼結体の機械的強度に影響を及ぼす問題が
有る。If the porosity of the sintered body is less than 5%, there is a disadvantage that the dimensional change rate of the sintered body cannot be reduced.
%, There is a problem that the mechanical strength of the sintered body is affected.
また、目的に応じ前記気孔に、金属、ガラス、樹脂、
潤滑材、触媒等を含浸することもできる。Further, depending on the purpose, the pores, metal, glass, resin,
Lubricants, catalysts and the like can also be impregnated.
本発明のセラミックス焼結体は、ムライト、窒化アル
ミ、アルミナ、あるいは周期率表第III族から第VIII族
に属する金属元素の窒化物が互いに結合したセラミック
スで、Ti,Zr,V,Nb,Ta,Cr,Ce,Co,Mn,Hf,Al,Si,Pr,Nd,Sm,
Eu,Gd,Tb,Dy,Ho,Yb,Lu,Th,Co,Niの少なくとも一種以上
の金属窒化物からなるセラミックスが好ましい。The ceramic sintered body of the present invention is a ceramic in which nitrides of metal elements belonging to mullite, aluminum nitride, alumina, or group III to group VIII of the periodic table are bonded to each other, and Ti, Zr, V, Nb, Ta , Cr, Ce, Co, Mn, Hf, Al, Si, Pr, Nd, Sm,
Ceramics composed of at least one metal nitride of Eu, Gd, Tb, Dy, Ho, Yb, Lu, Th, Co, Ni are preferred.
また、周期律表第III族から第VIII族に属する金属の
窒化物、炭化物、硼化物、硅化物、酸化物、炭窒化物、
酸窒化物の少なくとも一種からなる粒子、繊維（ファイ
バー、ホイスカ）等の表面に前記金属が被覆されたもの
も使用することができる。In addition, nitrides, carbides, borides, silicides, oxides, carbonitrides of metals belonging to Groups III to VIII of the Periodic Table,
Particles made of at least one kind of oxynitride, fibers (fibers, whiskers), and the like, the surfaces of which are coated with the metal can also be used.
特に、Al及び／又はSiの窒化物、酸窒化物、酸化物、
炭化物の少なくとも一種からなり、特に窒化物を主成分
とするのが好ましい。これらのなかでも、AlNを主成分
とするセラミックスが熱伝導、誘電率の点で特に好まし
い。In particular, nitrides, oxynitrides, oxides of Al and / or Si,
It is preferably made of at least one kind of carbide, and particularly preferably contains nitride as a main component. Among them, ceramics containing AlN as a main component are particularly preferable in terms of thermal conductivity and dielectric constant.
前記反応焼結体の焼結方法は、前記原料粉末に成形用
バインダを加えて成形した成形体を、窒化性ガス雰囲気
中で約1000℃以上に加熱し反応焼結法により焼結するこ
のが好ましい。The method of sintering the reaction sintered body is such that a molded body formed by adding a molding binder to the raw material powder is heated to about 1000 ° C. or more in a nitriding gas atmosphere and sintered by a reaction sintering method. preferable.
前記窒化性ガスとしては、窒素及び／又はアンモニア
に、必要に応じて水素、アルゴン、ヘリウム、一酸化炭
素を加えたものが好ましい。As the nitriding gas, a gas obtained by adding hydrogen, argon, helium, and carbon monoxide to nitrogen and / or ammonia as needed is preferable.
前記以外の焼結法によるときは、高融点金属物質であ
る金属パイプ中に、セラミックスの液相が介在しない条
件で焼結することが大切である。該液相が介在すると金
属パイプ中への銅等の含浸を妨げるので好ましくない。When a sintering method other than the above is used, it is important to perform sintering under the condition that a liquid phase of ceramics does not intervene in a metal pipe that is a high melting point metal material. The presence of the liquid phase is not preferable because it impedes the impregnation of the metal pipe with copper or the like.
前記グリーンシート等の成形用バインダは、ポリビニ
ルブチラールやポリエチレンなどの高分子材料、シリコ
ーン系化合物やポリシラン系化合物など一般にセラミッ
クス成形用のバインダとして用いられているものを使用
することができる。これらのバインダの脱脂方法は特に
限定しないが、焼結時の昇温速度を制御することによっ
て脱脂することができる。As the molding binder such as the green sheet, a material generally used as a ceramic molding binder such as a polymer material such as polyvinyl butyral or polyethylene, a silicone compound or a polysilane compound can be used. The method for degreasing these binders is not particularly limited, but the binder can be degreased by controlling the rate of temperature rise during sintering.
また、前記グリーンシート等の成形体の成形方法は、
射出成形、プレス成形、鋳込み成形、ラバープレス成
形、押出し成形、金型粉末成形など、成形体の形状と焼
結体に要求される特性等に応じて選択する。Further, a method for forming a green body such as the green sheet,
Injection molding, press molding, casting molding, rubber press molding, extrusion molding, mold powder molding, etc. are selected according to the shape of the molded body and the characteristics required for the sintered body.
本発明において、セラミックス焼結体の表面及び／又
は内部の少なくとも一部に形成する高融点金属パイプの
パターンとしては、前記成形体の焼結温度において、反
応しない金属パイプが使用される。In the present invention, a metal pipe that does not react at the sintering temperature of the molded body is used as a pattern of the high melting point metal pipe formed on at least a part of the surface and / or the inside of the ceramic sintered body.
このように、配線に金属パイプを用いることにより、
配線抵抗を大幅に下げることができる。これは、金属パ
イプ中に高導電性のガラスを含浸した場合に特に効果が
著しい。Thus, by using a metal pipe for wiring,
Wiring resistance can be greatly reduced. This is particularly effective when a highly conductive glass is impregnated in a metal pipe.
また、金属パイプから成る配線の強度が大きいため、
これえのピンなどの接続がしやすく、抵抗が小さく高強
度のピン付き基板が実現できる。Also, because the strength of the wiring made of metal pipes is large,
It is easy to connect such pins and the like, and a low-resistance, high-strength substrate with pins can be realized.
前記高融点の金属パイプの具体例としては、タングス
テン、モリブデン、クロム、マンガン、鉄、コバルト、
ニッケル、イリジウム又はこれらの元素を主成分とする
合金があり、２次元、３次元構造のパイプを目的に応じ
て用いることができる。該パイプの製造法は、既存の加
工やCVDなどのプロセスにより作製できる。特に、CVD法
は配線パターンの作製に有効である。その製造法をタン
グステンパイプを例にとって簡単に説明する。銅線で１
次元から３次元の配線を形成し、CVD法により銅線表面
にタングステンを被覆したのち、銅を除去することによ
り、連続したタングステンパイプの配線パターンを形成
することが出来る。これにより、内径0.1μｍから20mm
程度のパイプが製造可能である。Specific examples of the high melting point metal pipe include tungsten, molybdenum, chromium, manganese, iron, cobalt,
There are nickel, iridium, and alloys containing these elements as main components, and a pipe having a two-dimensional or three-dimensional structure can be used according to the purpose. The pipe can be manufactured by a known process or a process such as CVD. In particular, the CVD method is effective for producing a wiring pattern. The manufacturing method will be described briefly using a tungsten pipe as an example. 1 with copper wire
By forming a three-dimensional wiring from two dimensions and coating the copper wire surface with tungsten by the CVD method, the copper is removed, whereby a continuous tungsten pipe wiring pattern can be formed. This allows the inner diameter from 0.1 μm to 20 mm
Pipes of the order can be manufactured.
これらはバインダを加えたペースト状にしたものを、
前記グリーンシート等の成形体に配置し、該成形体を焼
結することによって形成される。特に、２次元、３次元
のタングステンパイプから成る配線パターンは、該配線
パターンにセラミックス粉末を流し込み、鋳込み成形法
が有効である。These are pastes with a binder added,
It is formed by arranging on a green body such as the green sheet and sintering the green body. Particularly, for a wiring pattern composed of a two-dimensional or three-dimensional tungsten pipe, a casting method is effective in which ceramic powder is poured into the wiring pattern.
さらにまた、焼結後の上記高融点金属パターンに含浸
して導電性を改善する低融点金属としては、Mg,Al,Ca,C
u,Ag,Cd,Sn,Auまたはこれらの元素を主成分とする合金
がある。Furthermore, as the low melting point metal for improving conductivity by impregnating the high melting point metal pattern after sintering, Mg, Al, Ca, C
There are u, Ag, Cd, Sn, Au or alloys containing these elements as main components.
該低融点金属の含浸は、該低融点金属が加熱溶融され
た中に、前記高融点金属パイプから成るパターンを形成
した焼結体の端部に露出した前記パターンの一部を浸漬
するか、または露出パターン部に前記低融点金属を乗
せ、加熱溶融することによって行なうことができる。Impregnation of the low melting point metal, while the low melting point metal is heated and melted, or by immersing a part of the pattern exposed at the end of the sintered body formed with the pattern consisting of the high melting point metal pipe, Alternatively, it can be carried out by placing the low melting point metal on the exposed pattern portion and melting it by heating.
本発明の焼結体は、毛細管現象と両者の漏れ性とによ
って、容易に内部まで含浸することができる。なお、前
記低融点金属が含浸途中で凝固しないよう、焼結体を該
低融点金属の溶融温度以上に保持することが大切であ
る。The sintered body of the present invention can be easily impregnated into the inside by the capillary phenomenon and the leakiness of both. It is important to keep the sintered body at a temperature equal to or higher than the melting temperature of the low melting point metal so that the low melting point metal does not solidify during the impregnation.
一例として、前記低融点金属である銅（Cu）の、高融
点金属であるタングステン（Ｗ）に対する漏れ性（接触
角）と、含浸後の金属パターンの欠陥発生率との関係を
第１表に示す。As an example, Table 1 shows the relationship between the leakage (contact angle) of the low melting point metal, copper (Cu), to the high melting point metal, tungsten (W), and the defect occurrence rate of the metal pattern after impregnation. Show.
第１表から明らかなように、接触角が90度を超えると
金属パターンに発生する欠陥が多くなり、好ましくな
い。なお、上記接触角の調製は、加熱温度および銅への
亜鉛の添加量を調整して行なった。 As is clear from Table 1, when the contact angle exceeds 90 degrees, the number of defects generated in the metal pattern increases, which is not preferable. The contact angle was adjusted by adjusting the heating temperature and the amount of zinc added to copper.
以上の結果より、本発明の低融点金属は漏れ形態から
分類して、高融点金属に対して接触角90度以下の拡張漏
れまたは浸漬漏れが生じるものを指す。Based on the above results, the low-melting point metal of the present invention is classified according to the type of leakage, and indicates a type in which an extended leak or a immersion leak having a contact angle of 90 ° or less occurs with the high-melting point metal.
また、第２表に示すように、前記低融点金属が銅の場
合、銅中の溶存酸素濃度が20ppmを超えると金属パター
ンに欠陥が発生する。Further, as shown in Table 2, when the low melting point metal is copper, a defect occurs in the metal pattern when the dissolved oxygen concentration in the copper exceeds 20 ppm.
これは、銅中の酸素濃度が高くなると、拡張漏れの範
囲内で漏れ性に差が生ずることを示している。This indicates that as the oxygen concentration in the copper increases, there is a difference in leakage within the range of extended leakage.
なお、漏れ性のほかに、高融点金属のパターンがパイ
プ状で形成されているために毛細管現象により短時間で
含浸される。 In addition to the leakiness, since the pattern of the high melting point metal is formed in a pipe shape, it is impregnated in a short time by a capillary phenomenon.
前記セラミックス粉末の配合比によっても焼結時の寸
法変化率に差が生ずるが、実装基板用としては線収縮率
で±３％以内に調製することが好ましい。Although the dimensional change ratio during sintering varies depending on the compounding ratio of the ceramic powder, it is preferable to adjust the linear shrinkage within ± 3% for a mounting substrate.
前記実装基板において、スルーホールの形成は従来と
同様にして形成することができる。またスルーホールと
同じ形状のプラスチック中子を成形体中に埋設し、焼結
時にプラスチックを熱分解することにより形成すること
ができる。In the mounting substrate, the through holes can be formed in the same manner as in the related art. Further, it can be formed by embedding a plastic core having the same shape as the through hole in the molded body and thermally decomposing the plastic during sintering.
また、前記スルーホールと同形状のプラスチック中子
中に高融点金属パイプを含ませたものを用いることによ
り、スルーホール中に高融点金属を残存させ、３次元配
線パターンを容易に形成することができる。さらに、成
形時に３次元配線パターンを金属パイプで形成させるこ
とにより、３次元配線パターンを容易に形成することが
できる。Further, by using a plastic core having the same shape as the through-hole and including a high-melting-point metal pipe in the plastic core, the high-melting-point metal remains in the through-hole, and a three-dimensional wiring pattern can be easily formed. it can. Furthermore, by forming a three-dimensional wiring pattern with a metal pipe during molding, the three-dimensional wiring pattern can be easily formed.
また、焼結時の寸法変化率が小さいために、スルーホ
ールの位置を精度よく合わせることができる。Further, since the dimensional change rate during sintering is small, the positions of the through holes can be accurately adjusted.
本発明の反応焼結体は、焼結時の寸法変化率が極めて
少ないので、複雑形状のものでも、特に、２次加工する
ことなく作成でき、金型内面の形状を転写した表面を有
する焼結体を得ることができる。Since the reaction sintered body of the present invention has a very small dimensional change rate during sintering, it can be made even if it has a complicated shape, in particular, without secondary processing, and has a surface having a surface onto which the shape of the mold inner surface has been transferred. You can get union.
また、焼結体表面の気孔を樹脂、ガラス、酸化被膜等
でオーバコートすることによって気密化することができ
る。これにより湿気を防止した複合焼結体を得ることが
できる。もちろん内部の気孔を残すこともできるので、
誘電率の小さいものが要求される実装基板用として好適
である。逆にチタン酸鉛、チタン酸バリウム等を含浸す
ることによって高誘電率化することもできる。In addition, airtightness can be achieved by overcoating pores on the surface of the sintered body with resin, glass, an oxide film, or the like. Thereby, a composite sintered body in which moisture is prevented can be obtained. Of course, you can also leave internal pores,
It is suitable for a mounting substrate requiring a small dielectric constant. Conversely, the dielectric constant can be increased by impregnating lead titanate, barium titanate, or the like.
強度が必要な場合には、焼結体内部に樹脂やガラスを
含浸することによって補強することもできる。If strength is required, it can be reinforced by impregnating the inside of the sintered body with resin or glass.
また、金属パイプ中に光ファイバーを通すことによ
り、耐食性に優れる光スァイバーケーブルを得ることも
できる。In addition, by passing an optical fiber through a metal pipe, an optical fiber cable having excellent corrosion resistance can be obtained.
本発明の複合焼結体の焼結による寸法変化率が小さい
のは、反応焼結による体積増加に基づくものであるが、
該焼結体中の気孔の効果にもよる。The small dimensional change due to sintering of the composite sintered body of the present invention is based on the volume increase due to reaction sintering,
It also depends on the effect of pores in the sintered body.
また、熱歪等によるクラックが発生しにくいのは、ク
ラックが発生しても、気孔部がクラックの進展を止める
ためである。The reason that cracks due to thermal strain or the like are less likely to occur is that even if cracks occur, the pores stop the progress of the cracks.
本発明の複合焼結体は、パイプ状の金属でパターンが
形成されているので焼結時に生成したガラス相が該金属
パイプ中に侵入することがなく、金属パイプに悪影響を
及ぼさない。In the composite sintered body of the present invention, since the pattern is formed by the pipe-shaped metal, the glass phase generated at the time of sintering does not enter into the metal pipe, and does not adversely affect the metal pipe.
上記金属パターンに銅等の低融点金属の含浸が容易な
のは、前記ガラス相等の滲出がないためである。The reason why the metal pattern is easily impregnated with a low melting point metal such as copper is that there is no oozing of the glass phase or the like.
次に、本発明を実施例を示した具体的に説明するが、
本発明はこれらに限定されない。Next, the present invention will be described specifically with reference to Examples.
The present invention is not limited to these.
実施例１ 配線基板用のセラミックス原料として、平均粒径５μ
ｍのAl粉末50重量部と、平均粒径１μｍのAlN粉末50重
量部に、ポリビニルブチラール６重量部、トリクロロエ
チレン24重量部、テトラクロロエチレン32重量部、ｎ−
ブチルアルコール44重量部、ブチルフタリルグリコール
酸ブチル２重量部からなるバインダ108重量部を加え、
ボールミルで24時間混合し、スラリーとする。Example 1 As a ceramic raw material for a wiring board, an average particle size of 5 μm was used.
50 parts by weight of Al powder of m and 50 parts by weight of AlN powder having an average particle diameter of 1 μm, 6 parts by weight of polyvinyl butyral, 24 parts by weight of trichloroethylene, 32 parts by weight of tetrachloroethylene, n-
108 parts by weight of a binder consisting of 44 parts by weight of butyl alcohol and 2 parts by weight of butyl butylphthalylglycolate were added,
Mix with a ball mill for 24 hours to form a slurry.
該スラリーを真空脱気して気泡を発生し、次いでドク
ターブレードを用いてポリエステルフィルム上に厚さ0.
2mmtに形成し、アルゴン雰囲気中で100℃、10時間乾燥
して、グリーンシートを作成した。The slurry was degassed under vacuum to generate air bubbles, and then a thickness of 0.
A green sheet was formed at a thickness of 2 mm and dried at 100 ° C. for 10 hours in an argon atmosphere.
該グリーンシートを150mm角に切断し、スルーホール
を必要個所に形成後、該スルーホール内と所定の配線パ
ターン部にタングステンパイプの導体回路を形成した。
該グリーンシートを30層積層した後、熱間プレス（150
℃,1時間）により圧着し、グリーン成形体を得た。The green sheet was cut into a 150 mm square, and a through hole was formed at a necessary portion. Then, a conductor circuit of a tungsten pipe was formed in the through hole and a predetermined wiring pattern portion.
After laminating 30 layers of the green sheets, hot pressing (150
C., 1 hour) to obtain a green molded body.
上記グリーン成形体を、窒素ガス雰囲気の炉中で、昇
温速度10℃/hで1000℃まで加熱し、炉中で放冷して焼結
体を得た。なお、前記バインダ等の脱脂は、昇温過程で
行われる。The green compact was heated to 1000 ° C. at a rate of 10 ° C./h in a furnace in a nitrogen gas atmosphere, and allowed to cool in the furnace to obtain a sintered body. The degreasing of the binder and the like is performed in the process of raising the temperature.
該焼結体の焼結による寸法変化率（線変化率）は0.5
％であり、極めて寸法安定性がよいことが分かる。The dimensional change (linear change) due to sintering of the sintered body is 0.5
%, Which indicates that the dimensional stability is extremely good.
また、該焼結体は、反応焼結体であり、気孔を有して
いる。本実施例においては、40vol％の気孔率（連通気
孔:28vol％，独立気孔:12vol％）を有するものが得られ
た。The sintered body is a reaction sintered body and has pores. In this example, a material having a porosity of 40 vol% (open pores: 28 vol%, independent pores: 12 vol%) was obtained.
次に、真空溶解炉中で溶解した溶融銅（酸素濃度10pp
m以下）に、前記焼結体の端部を浸漬し、タングステン
パイプにより形成された回路パターンに銅を含浸させ
た。Next, the molten copper (oxygen concentration 10pp
m or less), the end of the sintered body was immersed, and a circuit pattern formed by a tungsten pipe was impregnated with copper.
上記において、溶融銅中に焼結体の端部に露出したタ
ングステンパイプの一端を浸すだけで、漏れ性がよいタ
ングステンを用いていること、及び焼結体が通気性の気
孔を有していることにより、溶融銅が毛細管現象により
タングステンパイプで形成された回路部に、容易に含浸
することができる。In the above, simply immersing one end of the tungsten pipe exposed at the end of the sintered body in the molten copper, using tungsten with good leakage, and the sintered body has air-permeable pores Thereby, the molten copper can easily impregnate the circuit portion formed of the tungsten pipe by the capillary phenomenon.
また、本発明においては反応焼結によって焼結される
ために、前記タングステンパイプ内外にガラス等の液相
の滲出がなく、回路の電気抵抗率の低いものが得られ
る。なお、上記実装基板の誘電率は5.2である。Further, in the present invention, since the sintering is carried out by the reaction sintering, a liquid phase such as glass does not seep into and out of the inside and outside of the tungsten pipe, and a circuit having a low electric resistivity can be obtained. Note that the permittivity of the mounting board is 5.2.
また、本実施例によって得られた実装基板は、Ｘ線回
折によりAlN焼結体であることを確認した。Further, it was confirmed by X-ray diffraction that the mounting substrate obtained in this example was an AlN sintered body.
更にまた、該実装基板の表面をガラス、レジン等を用
いてオーバコートすることにより気密性を持たせること
ができる。本実施例においてはエポキシ系レジンを用い
てオーバコートした。Furthermore, the surface of the mounting substrate can be made airtight by overcoating the surface using glass, resin, or the like. In this embodiment, overcoating was performed using an epoxy resin.
上記により内部配線を有するシール型の実装基板を得
ることができる。As described above, a sealed mounting substrate having internal wiring can be obtained.
本実施例によって得られた前記実装基板の断面図を第
１図に示す。反応焼結体によって作成した気孔６を有す
る基板１に、導体配線２が形成された多層回路板には、
チップ３、接続用ピン４および半田接続部５を形成され
る。前記チップ３、接続用ピン４および半田接続部５
は、従来のろう付け方法によって接続することができ
る。FIG. 1 shows a cross-sectional view of the mounting board obtained according to this embodiment. A multilayer circuit board in which conductor wiring 2 is formed on a substrate 1 having pores 6 made of a reaction sintered body includes:
The chip 3, the connection pins 4 and the solder connection portions 5 are formed. The chip 3, the connection pins 4, and the solder connection portions 5
Can be connected by a conventional brazing method.
なお、該実装基板は無機フィラを配合したエポキシ系
熱硬化性樹脂をオーバコートし、シールした。The mounting substrate was overcoated with an epoxy-based thermosetting resin containing an inorganic filler and sealed.
比較例１ セラミックス原料をムライト粉末、パターン材として
タングステンファイバーを用い、実施例１と同様にして
焼結体を作成した。但し、焼結温度は1600℃まで昇温し
た。Comparative Example 1 A sintered body was prepared in the same manner as in Example 1, except that mullite powder was used as the ceramic raw material and tungsten fiber was used as the pattern material. However, the sintering temperature was raised to 1600 ° C.
得られた焼結体の寸法変化率は、線変化率で−15.2％
と大きく、また、タングステンファイバのパターンに、
ムライト焼結時に生成した液相物質が滲出し、そのため
に銅が十分に含浸されず、配線パターンに欠陥発生率で
50％以上の欠陥部が発生した。The dimensional change rate of the obtained sintered body is -15.2% in linear change rate.
And large, also to the tungsten fiber pattern,
The liquid phase material generated during mullite sintering oozes out, which causes the copper to not be sufficiently impregnated and the wiring pattern has a low defect rate.
More than 50% of defective parts occurred.
実施例２〜10 実施例１と同様にして、グリーンシートを作成し、こ
れを積層して成形体を形成し、窒化性ガス雰囲気中で焼
結して本発明の焼結体を得た。Examples 2 to 10 In the same manner as in Example 1, green sheets were formed, and laminated to form a molded body, which was sintered in a nitriding gas atmosphere to obtain a sintered body of the present invention.
前記成形体の原料粉末、高融点金属回路の材料、焼結
条件、並びに該焼結体の組成、焼結による寸法変化率、
気孔率等を第３表、第４表に示す。Raw material powder of the compact, material of the high-melting metal circuit, sintering conditions, and the composition of the sintered body, dimensional change rate by sintering,
Tables 3 and 4 show the porosity and the like.
第３表及び第４表から明らかなように、各実施例の基
板は、いずれも焼結によってガラス相がパイプ中に侵入
することなく、高精密配線基板として用いることができ
る。As is clear from Tables 3 and 4, each of the substrates of the examples can be used as a high-precision wiring substrate without a glass phase entering the pipe by sintering.
実施例11 第２図及び第３図にピングリドアレイ型パッケージの
応用例を示す。 Embodiment 11 FIGS. 2 and 3 show an application example of a pin lid array type package.
実施例１と同様にしてチップ３搭載した多層回路基板
11を作成し、キャップ12により封止する。Multilayer circuit board on which chip 3 is mounted in the same manner as in the first embodiment
11 is created and sealed with a cap 12.
多層回路基板11とキャップ12との封止は、予め形成し
た銅含浸タングステン層13,13′を半田付けにより封止
した。高寸法精度で多層回路基板と同一特性のキャップ
により封止できるので信頼性の高いパッケージを得るこ
とができる。To seal the multilayer circuit board 11 and the cap 12, the copper-impregnated tungsten layers 13, 13 'formed in advance were sealed by soldering. Since it can be sealed with a cap having the same characteristics as the multilayer circuit board with high dimensional accuracy, a highly reliable package can be obtained.
実施例12 第４図は本発明のコンミテータへの応用例を示し、第
４−ａ図は正面図、第４−ｂ図は側面図である。Embodiment 12 FIG. 4 shows an example of application of the present invention to a commutator. FIG. 4-a is a front view, and FIG. 4-b is a side view.
絶縁性の反応焼結した絶縁性セラミックス21からな
り、導体部22はタングステンパイプで形成したものに銅
を含浸して形成されている。これによって耐熱性に優れ
たコンミテータが得られる。The conductor portion 22 is made of a tungsten pipe formed by impregnating copper with an insulating reaction-sintered insulating ceramic 21. Thus, a commutator having excellent heat resistance can be obtained.
実施例13 第５図は埋め込み型ヒータの応用例を示す。Embodiment 13 FIG. 5 shows an application example of an embedded heater.
ヒータ回路部23は絶縁性セラミックスの間にタングス
テンパイプで導体部を形成し、Cu−Ni合金を含浸するこ
とにより、埋め込み型ヒータが得られる。In the heater circuit section 23, an embedded heater is obtained by forming a conductor section between insulating ceramics with a tungsten pipe and impregnating with a Cu-Ni alloy.
実施例14 第６図は冷却構造体の応用例を示す。Embodiment 14 FIG. 6 shows an application example of the cooling structure.
セラミックス中の通気孔に冷却用空気を通すことによ
り、セラミックス全体あるいは該セラミックスに付設す
る電子部品類を冷却することができる。By passing the cooling air through the vents in the ceramic, the entire ceramic or electronic components attached to the ceramic can be cooled.
実施例15 第７図は通信機器シャーシの配線の応用例を示す。Embodiment 15 FIG. 7 shows an application example of wiring of a communication equipment chassis.
これは、絶縁性セラミックスにタングステンパイプに
より３次元に導電配線２を組み、該タングステンパイプ
中に銅を含浸することにより、平面回路だけではなく、
垂直方向にも同時に回路を形成することができる。This is because not only a planar circuit but also a three-dimensional conductive wiring 2 is assembled with an insulating ceramic by a tungsten pipe, and the tungsten pipe is impregnated with copper.
A circuit can be formed simultaneously in the vertical direction.
実施例16 第８図は圧電センサーの応用例を示す。Embodiment 16 FIG. 8 shows an application example of a piezoelectric sensor.
本発明のセラミックスで圧電材を挟むことにより、セ
ンサーを得ることができる。そして、銅を含浸してリー
ド線を接続することができる。A sensor can be obtained by sandwiching a piezoelectric material between the ceramics of the present invention. Then, lead wires can be connected by impregnating with copper.
実施例17 第９図に示すような磁気センサーに応用した。Example 17 This was applied to a magnetic sensor as shown in FIG.
磁性材料をセラミックス中に分散させることにより、
磁気センサーに応用できる。そして、銅を含浸した部分
でリード線を接続することができる。By dispersing magnetic materials in ceramics,
Applicable to magnetic sensors. Then, a lead wire can be connected at a portion impregnated with copper.
前記各実施例と同様な方法により、高熱伝熱材、固体
電解質材、電子放射線材の担体として応用できる。It can be applied as a carrier for a high heat transfer material, a solid electrolyte material, and an electron radiation material by the same method as in the above embodiments.
さらに各種センサー、磁気シールド、リード線接続端
子、接続部品、各種電極などの部材として応用すること
ができる。Further, it can be applied as a member for various sensors, magnetic shields, lead wire connection terminals, connection parts, various electrodes, and the like.
本発明の複合焼結体は、１次元、２次元、３次元形状
の金属パイプで回路をセラミックス中に形成することが
できるために、従来にない用途に応用できる。INDUSTRIAL APPLICABILITY The composite sintered body of the present invention can be applied to unprecedented applications because a circuit can be formed in ceramics with a one-dimensional, two-dimensional, or three-dimensional metal pipe.
本発明の複合焼結体は、焼結時の寸法変化率が小さい
ので、高精度な配線一体型のセラミックス実装基板を得
ることができる。Since the composite sintered body of the present invention has a small dimensional change rate during sintering, a highly accurate wiring-integrated ceramic mounting substrate can be obtained.
また、本発明の複合焼結体は、多孔質セラミックスで
あるから低誘電率セラミックス基板としても有用であ
る。Further, since the composite sintered body of the present invention is a porous ceramic, it is also useful as a low dielectric constant ceramic substrate.
第１図は本発明によって得られた多層実装基板の断面
図、第２図はピングリドアレイ型パッケージの断面図、
第３図は第２図の接合部の部分断面図、第４−ａ図及び
第４−ｂ図はコンミテータの断面図で第４−ａ図は正面
図、第４−ｂ図は側面図、第５図は埋め込み型ヒータの
断面図、第６図は冷却構造体の断面図、第７図は通信機
器シャーシの断面図、第８図は圧電センサーの断面図、
第９図は磁気センサーの断面図である。 １……セラミックス基板、２……導体配線、３……チッ
プ、４……接続用ピン、５……半田接続部、６……気
孔、７……オーバコート、11……多層回路基板、12……
キャップ、13,13′……銅含浸タングステン層、16……
通気孔、21……絶縁性セラミックス、22……導体部、23
……ヒータ回路部、24……セラミックス粒子、25……圧
電材、26……磁性粉、27……リード線。FIG. 1 is a cross-sectional view of a multilayer mounting board obtained by the present invention, FIG. 2 is a cross-sectional view of a pin lid array type package,
FIG. 3 is a partial sectional view of the joint shown in FIG. 2, FIG. 4-a and FIG. 4-b are sectional views of the commutator, FIG. 4-a is a front view, FIG. 4-b is a side view, FIG. 5 is a sectional view of an embedded heater, FIG. 6 is a sectional view of a cooling structure, FIG. 7 is a sectional view of a communication device chassis, FIG. 8 is a sectional view of a piezoelectric sensor,
FIG. 9 is a sectional view of the magnetic sensor. DESCRIPTION OF SYMBOLS 1 ... Ceramic substrate 2, ... Conductor wiring, 3 ... Chip, 4 ... Connection pin, 5 ... Solder connection part, 6 ... Pores, 7 ... Overcoat, 11 ... Multilayer circuit board, 12 ......
Cap, 13,13 '…… Cu-impregnated tungsten layer, 16 ……
Vent hole, 21 ... insulating ceramics, 22 ... conductor, 23
... heater circuit part, 24 ... ceramic particles, 25 ... piezoelectric material, 26 ... magnetic powder, 27 ... lead wire.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０５Ｋ 3/46 Ｈ０５Ｋ 3/46 Ｈ (72)発明者 井上 広一 茨城県日立市久慈町4026番地 株式会社 日立製作所日立研究所内 (56)参考文献 特開 平３−112880（ＪＰ，Ａ) 特開 昭61−230204（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) C04B 41/88──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H05K 3/46 H05K 3/46 H (72) Inventor Koichi Inoue 4026 Kuji-cho, Hitachi City, Ibaraki Prefecture Within Hitachi Research Laboratory, Hitachi, Ltd. 56) References JP-A-3-112880 (JP, A) JP-A-61-230204 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) C04B 41/88
Claims (10)
の少なくとも一部に、金属パターンが形成された複合焼
結体において、前記金属パターンは前記セラミックスの
焼結温度以上の融点の金属パイプからなることを特徴と
する複合焼結体。1. A composite sintered body in which a metal pattern is formed on at least a part of the surface and / or inside of a ceramic sintered body, wherein the metal pattern is formed from a metal pipe having a melting point equal to or higher than the sintering temperature of the ceramic. A composite sintered body characterized in that:
ス反応焼結体の表面及び／又は内部の少なくとも一部に
金属パターンが形成された複合焼結体において、前記金
属パターンは、高融点金属と、該金属よりも低融点の導
電性金属とが一体化して形成されており、該高融点金属
は前記セラミックスの焼結温度以上の融点の金属パイプ
からなることを特徴とする複合焼結体。2. A composite sintered body in which a metal pattern is formed on at least a part of the surface and / or inside of a ceramics reaction sintered body having a porosity of 5 to 50 vol%, wherein the metal pattern has a high melting point. The composite sintering is characterized in that a metal and a conductive metal having a lower melting point than the metal are integrally formed, and the high melting point metal is a metal pipe having a melting point higher than the sintering temperature of the ceramic. body.
デン、クロム、マンガン、鉄、コバルト、ニッケル、イ
リジウム又はこれらの元素を主成分とする合金の少なく
とも一種からなることを特徴とする請求項１又は２記載
の複合焼結体。3. The metal pipe according to claim 1, wherein said metal pipe is made of at least one of tungsten, molybdenum, chromium, manganese, iron, cobalt, nickel, iridium and an alloy containing these elements as main components. The composite sintered body according to the above.
ブデン、クロム、マンガン、鉄、コバルト、ニッケル、
イリジウム又はこれらの元素を主成分とする合金の少な
くとも一種からなる金属パイプと、該金属パイプと良好
な漏れ性を有し、かつ該金属パイプよりも低融点の導電
性金属とが一体化していることを特徴とする請求項１又
は２記載の複合焼結体。4. The method according to claim 1, wherein the metal pattern is tungsten, molybdenum, chromium, manganese, iron, cobalt, nickel,
A metal pipe made of at least one of iridium or an alloy containing these elements as a main component, and a conductive metal having a good leaking property with the metal pipe and having a lower melting point than the metal pipe are integrated. The composite sintered body according to claim 1, wherein:
及び／又はけい素の窒化物、酸窒化物、炭化物の少なく
とも一種からなることを特徴とする請求項１〜４のいず
れか１項記載の複合焼結体。5. The composite according to claim 1, wherein said ceramic sintered body is made of at least one of nitride, oxynitride and carbide of aluminum and / or silicon. Sintered body.
ルミニウム、カルシウム、銅、銀、カドミウム、錫、金
又はこれらの元素を主成分とする合金の少なくとも一種
からなることを特徴とする請求項４記載の複合焼結体。6. The low melting point conductive metal is made of at least one of magnesium, aluminum, calcium, copper, silver, cadmium, tin, gold and an alloy containing these elements as main components. 5. The composite sintered body according to 4.
作成し、該成形体の表面及び／又は内部の少なくとも一
部に、該金属及び／又は金属被覆の粉末と反応性ガスと
の反応温度で反応しにくい金属パイプでパターンを形成
し、次いで該成形体を反応性ガス中で反応焼結する工程
を含むことを特徴とする複合焼結体の製造法。7. A molded body of powder of metal and / or metal coating is prepared, and at least a part of the surface and / or inside of the molded body is coated with the powder of metal and / or metal coating and a reactive gas. A method for producing a composite sintered body, comprising a step of forming a pattern with a metal pipe that is difficult to react at a reaction temperature and then subjecting the molded body to reaction sintering in a reactive gas.
末、AlN粉末、Al2O3粉末の少なくとも一種をバインダと
混練しグリーンシートを形成する工程、 （ｂ） 前記グリーンシートにタングステン、モリブデ
ン、クロム、マンガン、鉄、コバルト、ニッケル、イリ
ジウムまたはこれらの元素を主成分とする合金の少なく
とも一種からなるパイプを用いて配線パターンを形成す
る工程、 （ｃ） 前記グリーンシートを積層して成形し、該成形
体を反応性ガス中で反応焼結する工程、 （ｄ） 前記焼結体の前記金属により形成された配線パ
ターン部に導電性金属を溶融含浸する工程、 を含むことを特徴とする複合焼結体から成る回路基板の
製造法。8. A step of kneading at least one of Al powder or Al powder and AlC powder, AlN powder, and Al 2 O 3 powder with a binder to form a green sheet, and (b) tungsten and molybdenum on the green sheet. Forming a wiring pattern using a pipe made of at least one of chromium, manganese, iron, cobalt, nickel, iridium or an alloy containing these elements as a main component. (C) laminating and molding the green sheets A step of reacting and sintering the molded body in a reactive gas; and (d) a step of melting and impregnating a wiring pattern portion formed of the metal of the sintered body with a conductive metal. A method for manufacturing a circuit board made of a composite sintered body.
ム、マンガン、鉄、コバルト、ニッケル、イリジウムま
たはこれらの元素を主成分とする合金の少なくとも一種
からなるパイプを用いて配線パターンを形成する工程、 （ｂ） 前記配線パターンに、セラミックス粉末とバイ
ンダーと分散剤を混合し鋳込み成形法により成形体を形
成する工程、 （ｃ） 前記成形体を焼結する工程、 （ｄ） 前記焼結体の前記金属パイプにより形成された
配線パターン部に導電性金属を溶融含浸する工程、 を含むことを特徴とする複合焼結体から成る回路基板の
製造法。9. A step of forming a wiring pattern using a pipe made of at least one of tungsten, molybdenum, chromium, manganese, iron, cobalt, nickel, iridium or an alloy containing these elements as a main component. b) mixing a ceramic powder, a binder, and a dispersant into the wiring pattern to form a compact by a casting method; (c) sintering the compact; and (d) the metal of the sintered compact. A method of melting and impregnating a conductive pattern into a wiring pattern portion formed by a pipe.
属パターンとして、タングステンパイプにCu−Ni合金を
含浸させて、成形してなる埋め込み型ヒータ。10. The embedded heater according to claim 4, wherein a tungsten pipe is impregnated with a Cu—Ni alloy as a metal pattern and molded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2141316A JP2780129B2 (en) | 1990-06-01 | 1990-06-01 | Composite sintered body and its manufacturing method and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2141316A JP2780129B2 (en) | 1990-06-01 | 1990-06-01 | Composite sintered body and its manufacturing method and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0437677A JPH0437677A (en) | 1992-02-07 |
| JP2780129B2 true JP2780129B2 (en) | 1998-07-30 |
Family
ID=15289075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2141316A Expired - Lifetime JP2780129B2 (en) | 1990-06-01 | 1990-06-01 | Composite sintered body and its manufacturing method and application |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2780129B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7378210B2 (en) * | 2019-01-17 | 2023-11-13 | 新光電気工業株式会社 | Ceramic component manufacturing method |
-
1990
- 1990-06-01 JP JP2141316A patent/JP2780129B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0437677A (en) | 1992-02-07 |
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