JP2755129B2 - Electron beam exposure apparatus and electron beam deflection method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure apparatus and an electron beam deflection method, and more particularly, to an electron beam exposure apparatus and an electron beam deflection method used for lithography for a super LSI.

[0002]

2. Description of the Related Art An electron beam exposure for irradiating a resist coated on a mask substrate or a wafer with a high-speed electron beam of 5 to 50 KeV to obtain a desired pattern by utilizing a chemical reaction of an irradiated portion of the resist is performed by: Beam diameter 0.1
Large-scale, high-integration, and high-definition due to the high resolution of less than μm and the ability to easily deflect by a magnetic field or electric field, so that the deflection scanning signal can be generated with high precision by computer control. This is positioned as an indispensable technology for lithography for ultra-large scale LSIs requiring more than several million patterns (a process of forming a resist film having a desired pattern on a semiconductor substrate).

Depending on the shape of the electron beam to be used, the electron beam exposure apparatus includes a device using a Gaussian beam and a device using a shaped beam. A method using a shaped beam is to irradiate a hole (aperture) having a required shape with a beam obtained by processing a cross-sectional shape of a focused beam into a desired shape, and to reduce an image of the aperture by using an electron beam. draw. Devices using this shaped beam include those using a fixed shape beam having a fixed cross-sectional area of the shaped beam,
There is a type in which two apertures are superimposed electro-optically and a variable-shaped beam in which the cross-sectional area of a shaped beam is variable is used. Here, for lithography for VLSI,
A variable shape beam type electron beam exposure apparatus widely used because of its inherently high accuracy and high speed will be described.

In this type of conventional electron beam exposure apparatus, both a magnetic deflector using a magnetic field and an electrostatic deflector using an electric field are used as deflection lenses for directing a beam to a predetermined position on a semiconductor substrate. As is well known, an electrostatic deflector requires less energy and has excellent frequency characteristics. However, in this type of electron beam exposure apparatus having a high acceleration voltage, the deflection voltage becomes extremely high, and it becomes difficult to maintain the dielectric strength of the elements constituting the deflection circuit and to generate a required deflection waveform. On the other hand, the electromagnetic deflector only needs to supply a current having a required deflection waveform to an external deflection coil, and the technical easiness of the deflection circuit is far superior. Also, magnetic field deflection is much more advantageous for spot defocus and scanning distortion due to electron beam deflection. Therefore, an electromagnetic deflector is widely used as a main deflector of an electron beam exposure apparatus, and an electrostatic deflector is used as a sub deflector for correcting errors, aberrations, and the like.

In an electron beam exposure apparatus, it is necessary to set a beam irradiation position at high speed and with high accuracy. However, it is well known that errors occur in electromagnetic deflectors due to the transient characteristics between the drive amplifier side and the magnetic field generation side of the electromagnetic deflector, which is an inductive load, and the time delay or settling time caused by the eddy current effect. I have.

Referring to FIG. 5, which shows a first example of a conventional electron beam exposure apparatus, the first conventional electron beam exposure apparatus includes an electron gun 10 for supplying an electron beam 11 and an address A for a memory. C that controls the entire device such as generation
PU1, a memory 2 for temporarily storing deflection data D corresponding to a desired pattern corresponding to a predetermined irradiation position of the electron beam 11 on a target 12, which is a semiconductor substrate, and data for transmission of data D read from the memory 2. Bus 3
And a digital / analog converter and an amplifier (DA) for the electromagnetic deflector 7 for converting the data D into an analog signal and amplifying the analog signal to generate a main deflection signal a.
C amplifier) 4 and an electrostatic deflector 8 in response to the supply of the signal D
DAC amplifiers 5 and 6 for generating deflection signals b and c, respectively, and a step-like pattern for each sub-deflection area, which is an area obtained by dividing the main deflection area by a preset number in response to the supply of the deflection signal a. Electromagnetic deflector 7 which is a main deflector for deflecting light into
And an electrostatic deflector 8 which is a sub-deflector for deflecting the sub-deflection area in a step-like manner in each sub-sub deflection area in response to the supply of the deflection signal b, and responding to the supply of the deflection signal c. And an electrostatic deflector 9 serving as a sub-sub-deflector for deflecting the electron beam 11 at an arbitrary shot position in the sub-sub-deflection region.

Referring to FIG. 6A showing an example of a deflection area corresponding to a beam setting position on the target 12 by this type of electron beam exposure apparatus, a main deflection area 101 has 25 rows and 5 columns. It is composed of a sub-deflection area Smn (m and n are integers of 1 to 5). With further reference to FIG. 6B, each of the sub-deflection regions Smn also includes 25 sub-sub deflection regions Qop (o and p are integers of 1 to 5) each having 5 rows and 5 columns. First, the electron beam 11 is set by the electromagnetic deflector 7 so as to irradiate the center of the first sub deflection area S11. Next, the electron beam 11 is moved by the electrostatic deflector 8 to the first sub-sub deflection area Q11 of the sub deflection area S11.
Is set so as to irradiate the predetermined position. Next, a desired pattern is drawn by the electron beam 11, that is, one-shot exposure is performed by the deflection operation of the electrostatic deflector 9. Next, the electron beam 11 is set in the adjacent sub-sub deflection area Q12 by the electrostatic deflector 8, and one-shot exposure is performed in the same manner. When the exposure of the sub-sub deflection area Q15 is completed, the sub-sub deflection area Q25 is moved in the column direction to expose the sub-sub deflection area Q25. In this way, when the exposure up to the last sub-deflection area Q55 is completed, the electron beam 11 is set by the electromagnetic deflector 7 so as to irradiate the center of the next sub-deflection area S12,
Similarly, sub-deflection areas Q11 to Q11 in sub-deflection area S12
The exposure of each shot of Q55 is performed. When the exposure of the shot corresponding to each sub-deflection area of the sub-deflection area S15 is completed, the exposure apparatus moves in the column direction and performs exposure on the sub-deflection area S25 in the same process. Thus, the last sub deflection area S
Perform up to 55 exposures.

In operation, the electron beam 11 from the electron gun 10 is applied to the electromagnetic deflector 7, the electrostatic deflectors 8, 9
Is irradiated on the target 12 via. The CPU 1 supplies an address A corresponding to the deflection data D to the memory 2. The memory 2 supplies the deflection data D read in response to the supply of the address A to the DAC amplifiers 4, 5 and 6 in parallel via the data bus 3. First, CPU
1 and the deflection data D corresponding to the sub deflection area S11 are supplied to the DAC amplifier 4, and the DAC amplifier 4
In response to the supply of the deflection data D, the deflection data D is subjected to digital-to-analog conversion, and further subjected to necessary amplification to generate a main deflection signal a which is a drive current for the electromagnetic deflector 7, and supplies the main deflection signal a to the electromagnetic deflector 7. . As a result, the electron beam 11 is deflected so as to irradiate a substantially central portion of the sub deflection area S11. Next, the control signal IB of the CPU 1 and the sub-sub deflection area Q1
The deflection data D corresponding to 1 is supplied to the DAC amplifier 5.
The DAC amplifier 5 generates a sub-deflection signal “b” to generate an electrostatic deflector 8.
To supply. As a result, the electron beam 11 is deflected so as to irradiate a substantially central portion of the sub-sub deflection region Q11. Next, a control signal IC of the CPU 1 and deflection data D corresponding to a predetermined pattern are supplied to the DAC amplifier 6. The DAC amplifier 6 generates a deflection signal c corresponding to a predetermined pattern in response to the supply of the signals IC and D, and supplies the deflection signal c to the electrostatic deflector 9.
As a result, the electron beam 11 is shifted to one of the sub-sub deflection regions Q11.
The shot is exposed. Hereinafter, as described above, exposure is performed for each shot corresponding to the sub-deflection regions Q12 to Q55 of the sub-deflection region S11, and exposure is similarly performed for the sub-deflection regions S12 to S55.

Here, in the main deflection operation by the electromagnetic deflector 7, the current value I1 corresponding to the desired deflection amount becomes larger as the deflection amount per one becomes larger due to the time delay caused by the eddy current effect and the transient phenomenon of the circuit operation. The time to reach is longer. That is, in order to obtain a large deflection amount, it is necessary to apply a large input voltage to the electromagnetic deflector 7 as the main deflection signal a. Since the electromagnetic deflector 7 is formed by an electromagnetic coil, the inductance component L of the coil Because of the time constant (τ = L / R) due to the resistance component R of the coil and the wiring, it takes a long time for the current i flowing through the coil to reach the current value I1 that gives a desired deflection amount. As a result, since the electron beam 11 gradually reaches a desired target position, an error occurs in a shot position corresponding to exposure. Of these factors,
The eddy current effect can be reduced to a negligible level by selecting materials such as coils and devising the structure.

FIG. 2A showing an example of the above transient phenomenon waveform.
Referring to the above, the transient phenomenon is caused by the time constant τ of the electromagnetic deflector 7.
Therefore, a certain time, that is, a settling time ts is required until the current reaches the steady state. Therefore, assuming that the distance of the electron beam 11 to a desired target position is y, the relationship between the distance y and the time t is predicted as in the following equation.

Y = Aexp (−t / τ)......
... (1) Here, A is a constant and is the amount of deflection by the electromagnetic deflector 7 per time, that is, the size of the sub deflection area Smn in this case.

If the time from when the deflection signal a is supplied to the electromagnetic deflector 7 and the deflection operation is started until the exposure is started, that is, the waiting time tw is insufficient compared with the settling time ts, the set position of the electron beam 11 is changed. Exposure is started in a completely unstable state, and as shown in FIG. 7A, for example, an error Δy occurs in the first exposure corresponding to the sub-sub deflection area Q11. Second
If the drive current i of the electromagnetic deflector 7 reaches the steady state I1 after the settling time ts after the third exposure correspondence times t2, t3,..., The error Δy is kept as it is. The exposure position accuracy is lower than the original connection accuracy level of the electron beam exposure apparatus. Therefore, the above-described exposure is normally started after the set position of the electron beam 11 is stabilized. In practice, the electron beam 11 is blanked by a blanker (not shown) so as not to reach the target 11 until it is stabilized.

However, the settling time ts of the electromagnetic deflector 7 is much slower than the electrostatic deflectors 8 and 9 because of the time delay caused by the above-mentioned transient phenomenon, and it is necessary to take a sufficient waiting time tw.
This is one of the factors that lower the throughput. On the other hand, if exposure is started before the set position of the electron beam 11 is stabilized, an error occurs in the shot position and the LSI
This may cause a lack of wiring due to breakage of a circuit pattern of a chip, a shift of a circuit element or wiring from a predetermined position, or the like, resulting in a decrease in yield. Referring to FIG. 7, which shows an example of the rising characteristics of the current i of the electromagnetic deflector 7 flowing in response to the supply of the main deflection signal a, the current value I1 starts from the supply time t / τ = 0 of the signal a.
It takes 9t / τ to reach.

As described above, an error is caused by a transient characteristic between the drive amplifier side and the magnetic field generation side of the electromagnetic deflector, which is an inductive load, and a time delay caused by an eddy current effect, that is, a settling time.

A second example of this type of conventional electron beam exposure apparatus for shortening the settling time is disclosed in Journal of Vacuum Science and Technology published in the United States.
Technology (Journal of Vacuum S
science and Technology) B1
0, No. 6, November / December 1992, No. 2794-
Takahashi et al., Pp. 2798, Electron Beam Lithography System with New Collection Techniques (Y. Takahashi, e.)
t. al. "Electronon Beam Lith
ographySystem with New Co
As described in “Reaction Techniques”), the time derivative of the current flowing through the electromagnetic deflector, which is the main deflector, is obtained by a differentiator, and the value is fed back to a deflection control system. To shorten the time.

Referring to FIG. 8, the second conventional electron beam exposure apparatus shown in FIG. 8 includes the components 1 to 12 of the first electron beam exposure apparatus shown in FIG. and a current detection circuit 13 for detecting the current i in response to the supply of the clock CP and the current i supplied from the CPU 1.
A differentiator 14 that supplies the time derivative of
Signal B in response to the supply of deflection data D and correction signal e
And a deflection control system 15 that supplies the signal D to the DAC amplifier 5 instead of the signal D.

The operation will be described with reference to FIG. 7 as well. In response to generation of an electron beam and supply of deflection data D, a main deflection signal a which is a drive current of the electromagnetic deflector 7 is generated. 7 is the same as the operation described in the first section.
This is the same as the electron beam exposure apparatus described above. Current detection circuit 13
Detects the current value i of the main deflection signal a, and this current value i is supplied to the differentiator 14. The differentiator 14 calculates the time derivative di / dt of the current value i and supplies a corresponding signal e to the deflection control system 15. The deflection control system 15 receives the control signal IB of the CPU 1, the deflection data D corresponding to the sub-sub deflection area Q11 and the supply of the signal e, generates the signal B in response to the supply of the signals IB, D and e, and generates a DAC. Supply to amplifier 5. The DAC amplifier 5 generates a sub-deflection signal b in response to the supply of the signal B and supplies it to the electrostatic deflector 8 as in the first example.

As a result, a signal e corresponding to the time differential value of the current value i flowing through the coil of the electromagnetic deflector 7 is obtained, and the current i, that is, the center of the sub deflection area S11 corresponding to the desired target position of the electron beam 11, is obtained from the value. By knowing the state of reaching the unit and supplying the insufficient deflection amount at that time to the electrostatic deflector 8, it is possible to perform correction at a time before the desired position is reached.

In the third conventional electron beam exposure apparatus described in Japanese Patent Application Laid-Open No. 64-27150, the amount of one-time deflection of the electromagnetic deflector is limited irrespective of the presence / absence of pattern data. By shortening each settling time,
The time required for stabilizing the position of the electron beam is reduced.

[0020]

In the above-mentioned conventional electron beam exposure apparatus and electron beam deflection method, in the first conventional electron beam exposure apparatus, the driving amplifier side of the electromagnetic deflector, which is an inductive load, and the magnetic field generation are used. There is a disadvantage that an error occurs due to a time delay caused by a transient characteristic between the side and the eddy current effect, that is, a settling time.

In the conventional second electron beam exposure apparatus in which the settling time is shortened, the drawing time is increased due to the method of obtaining the derivative of the driving current of the electromagnetic deflector, which requires hardware or software processing time. There is a disadvantage of doing so.

Further, the stabilization time is shortened by limiting the amount of deflection per one operation of the electromagnetic deflector to reduce the stabilization time for each deflection irrespective of the presence or absence of pattern data. The electron beam exposure apparatus 3 has a drawback that not only is it not possible to expect such a large reduction in beam settling time, but also in particular, in the case of drawing data having a low pattern density, a useless scanning time is required.

[0023]

According to the present invention, there is provided an electron beam exposure apparatus comprising: an electron gun for supplying an electron beam; and a magnetic field for deflecting the electron beam so as to irradiate a desired position on the surface of a semiconductor substrate to be exposed. , An electrostatic deflector using an electric field, a memory storing deflection data corresponding to a desired pattern, and a CPU for generating a read address of the deflection data from the memory and controlling the entire apparatus
And first and second deflection circuits for generating first and second deflection signals corresponding to the electromagnetic deflector and the electric field deflector in response to the supply of the deflection data, respectively. In the electron beam exposure apparatus provided with , settling time of the electromagnetic deflector
Configured with a deflection error detecting means for detecting the deflection position error caused, the correction data generation means for generating correction data for correcting the said deflected position erroneous difference whether we second deflection signal.

[0024]

Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows an embodiment of the electron beam exposure apparatus according to the present invention, in which constituent elements common to those in FIG. 5 are indicated by blocks with common reference numerals. The electron beam exposure apparatus according to this embodiment shown in FIG. An electron gun 10 for supplying an electron beam 11 for irradiating a target 12 similar to a conventional one;
, Memory 2, data bus 3, DAC amplifiers 4 to 6
A deflection error detector 17 for detecting a deflection error E caused by the deflector 7 from the test pattern 16 drawn on the target 12 in addition to the electromagnetic deflector 7 and the electrostatic deflectors 8 and 9.
A correction data generating unit 18 that calculates correction data F from the deflection error E and supplies the correction data F to the CPU 1; and a deflection control system 15A that generates a signal FB by calculating the correction data F to be superimposed on the deflection data D.

For convenience of explanation, the deflection area corresponding to the beam setting position on the target 12 and the deflection operation of the electron beam 11 by the electron beam exposure apparatus of the present embodiment are the same as those in FIG. . That is, the main deflection area 101 has 25 sub-deflection areas Smn of 5 rows and 5 columns.
(M and n are integers from 1 to 5), and the sub-deflection region Smn
Are similarly composed of 25 sub-sub deflection areas Qop (o and p are integers of 1 to 5) each having 5 rows and 5 columns. The electron beam 11 is converted by the electromagnetic deflector 7 into the first sub deflection area S
From 11 to the last S55, the irradiation position is moved stepwise, and the sub-sub deflection area Qo is
The deflection operation and the exposure operation (shot) are performed by the electrostatic deflectors 8 and 9 corresponding to each of the p shots.

The operation will be described with reference to FIGS. 1 and 2 and FIG. 3 showing an example of operation waveforms of this embodiment. As in the conventional case, CPU 1 designates address A of memory 2 and Of the deflection data D of the DAC amplifiers 4 to
6 through the data bus 3 and a predetermined deflection signal a,
b and c are generated and the electromagnetic deflector 7 and the electrostatic deflectors 8 and 9 are generated.
To deflect the electron beam 11 in a desired manner.

As described in the conventional example, in the drawing (exposure), the electrostatic deflector 9 operates for each shot in accordance with the pattern data, and first, the exposure is executed in the sub-sub deflection area Q11. When the exposure in Q11 is completed, the electrostatic deflector 8 turns the sub-deflection areas Q11, Q12... Q15, Q25.
The exposure is continued by sequentially deflecting in the next direction to Q55. When all the exposures in one sub-deflection area, for example, S11 are completed, the electromagnetic deflector 7 deflects the electron beam 11 to the adjacent sub-deflection area S12, and the exposure is similarly continued.

As described in the background art, the deflection operation by the electromagnetic deflector 7 requires a long settling time ts due to a time delay due to the transient phenomenon shown in the equation (1) and FIG. Referring to FIG. 2B showing the operation of the present embodiment, in order to shorten the settling time ts and achieve a desired waiting time tw, insufficient deflection between the waiting time tw and the settling time ts. The electrostatic deflector includes the correction signal f shown in the expression (2) for performing the deflection operation in the opposite phase to the expression (1) started from the waiting time tw for the correction of the amount and included in the original sub deflection signal b. 8

F = −Aexp (−t / τ)....
…………………… (2) where tw ≦ t ≦ ts.

The correction data generating means 18 calculates a correction signal f based on a test pattern 16 described later for detecting the equation (1) and error data Δy supplied from the error detecting means 17.
The corresponding correction data F is generated, and the correction data F is supplied to the deflection control system 15A via the CPU 1. Deflection control system 1
5A calculates the correction data F to be superimposed on the deflection data D, generates corrected sub-deflection data FB, and supplies it to the DAC amplifier 5. The DAC amplifier 5 receives the sub deflection data FB
To generate the deflection signal b and drive the electrostatic deflector 8.

Referring to FIG. 3 showing an example of the test pattern 16, this test pattern 16
It has an error detection pattern Pop formed around a rectangular exposure area corresponding to each of the ops. For convenience of description, the sub-sub deflection areas Q52 and Q53 adjacent in the left-right direction and the sub-sub deflection area Q4 vertically adjacent to the sub-sub deflection area Q52.
2, the error detection patterns P52 arranged around the sub-sub deflection area Q52 each have a center line k52, l52 formed slightly longer than the other lines to indicate the center. The error detection patterns P53, P corresponding to the sub-sub deflection areas Q53, Q42 are composed of a space pattern K52 and a line / space pattern L52 in the left-right direction.
Reference numeral 42 denotes a vertical / horizontal line / space pattern K53 of a slightly larger pitch p having a predetermined relationship with the pitch s.
K42 and L53, L42. These mutually adjacent line / spacing patterns K52, K53 and L5
Each combination of L2 and L53 has a well-known main scale / vernier relation.

As is well known, the vernier scale is an auxiliary scale for further subdividing the scale and reading it, and has a scale obtained by equally dividing the length of the main scale u-1 or u + 1 scale by u. The length l of the vernier scale is expressed by the following equation, where s is the interval between the main scales and 1 is the interval between the subscales.

1 = upp = (ru ± 1) s Here, r is a small integer and is generally 1 or 2.

S and p correspond to the pitches s and p of the present embodiment. The pitch s is 1.00 μm and the pitch p is 1.02 μm.
And set each. Accordingly, the number u of main scale graduations corresponding to the pitch s is 50, and the length 1 of the sub scale is 50 of the pitch P.
51 μm. As a result, the readable resolution is 1/50 of the pitch s, that is, 0.02 μm.

The electron beam deflecting method of the present embodiment will be described with reference to FIGS. 1 and 2 and FIG. 4 showing a flowchart of the present embodiment. First, a desired waiting time tw is set (step S1). In this waiting time tw, the target 12
A test pattern 16 is formed on the upper surface by a plurality of shots of the electron beam 11 (step S2). For convenience of explanation, the sub-deflection region S22 is described here. Next, the test pattern 16 is observed with an optical microscope which forms a part of the error detecting means 17, and the value of y in the waiting time tw, that is, the first exposure target immediately after deflection to the sub deflection area S22 by the electromagnetic deflector 7 is determined. In order to determine the amount of deviation Δy in the left-right direction of the sub-sub deflection area Q11, the vertical line / space pattern K11 of the sub-sub deflection area Q11 and the vertical direction of the sub-sub deflection area Q51 of the sub deflection area S12 vertically adjacent to each other are obtained. A matching line in which the two lines coincide with each other is extracted from the line / interval pattern K51, and the value from the center line 111 is recorded (step S3). In this example, since the third line l113 to the left from the center line l11 coincides, -3 is recorded. The deviation amount Δy from the product of this value −3 and the above resolution 0.02 μm
Is determined as −0.06 μm. As in this case, if the deviation amount Δy is not within the required accuracy (for example, 0.04 μm), the value is supplied to the correction data generating means 18 to generate correction data F (step S4), and then to the CPU 1. The CPU 1 performs necessary processing such as calculation, supplies the correction data F to the deflection control system 15A, and repeats steps S2 and S3 again. When the deviation amount Δy satisfies the required accuracy, the main exposure is performed.

Here, the sub-deflection area Q51 of the sub-deflection area S12 has a sufficient time after the deflection settling time ts by the electromagnetic deflector 7 and is drawn in a stable state. Does not include the error due to the delay of the coil transient. Therefore, the amount of the shift is detected only by the error in the sub-sub deflection area Q11.

In this embodiment, the correction data is supplied to the CPU to perform necessary arithmetic processing. However, if the deflection control system has a sub CPU, the correction data is directly supplied to the deflection control system. It can also be configured. If the settling time ts corresponding to the deflection amount is substantially stable, the CPU
Alternatively, the deflection control system may be provided with a correction data map that covers the expected required range of the correction data, and correction may be performed by the electrostatic deflector according to the correction data map.

Since the read value of the shift amount Δy includes the connection accuracy and read error inherent to the electron beam exposure apparatus, the shift amounts for not only one time but also a plurality of times at t1, t2,. The correction accuracy can be further improved by using the shift amount corresponding to the times as the correction data or using the average value thereof as the correction data.

As a result, the settling time ts is reduced to the waiting time tw, and exposure without error is performed. Alternatively, the exposure time can be reduced by further reducing the waiting time tw and repeating the processing steps S1 to S4 described above. At this time, if the shift amount Δy is smaller than the sub-sub deflection area Qop, the waiting time tw can be further reduced.

In this embodiment, the amount of deviation from the target position is obtained by using a test pattern. However, the amount of deviation can be obtained by automatic measurement or the like.

[0041]

As described above, the electron beam exposure apparatus and the electron beam deflecting method of the present invention provide a deflection error detecting means for detecting a deflection error of an electromagnetic deflector, and a deflection signal of an electrostatic deflector based on the deflection error. And the correction data generating means of (1) is provided, and the stabilization time can be shortened.

Further, since correction data for obtaining a correction amount is supplied to the deflection control circuit in advance, processing time on hardware and software is not required as compared with a method of providing feedback during drawing, so that high-speed correction can be obtained. There is an effect that it can be.

[Brief description of the drawings]

FIG. 1 is a block diagram showing an embodiment of an electron beam exposure apparatus according to the present invention.

FIG. 2 is a characteristic diagram illustrating the operation of the present embodiment.

FIG. 3 is a diagram illustrating an example of a test pattern according to the present embodiment.

FIG. 4 is a flowchart illustrating an electron beam deflection method according to the present embodiment.

FIG. 5 is a block diagram showing a first example of a conventional electron beam exposure apparatus.

FIG. 6 is a diagram showing an example of main, sub and sub deflection areas of the electron beam exposure apparatus.

FIG. 7 is a characteristic diagram showing a time-current characteristic from supply of a deflection signal of the electromagnetic deflector.

FIG. 8 is a block diagram showing a second example of a conventional electron beam exposure apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 CPU 2 Memory 3 Data bus 4-6 DAC amplifier 7 Electromagnetic deflector 8, 9 Electrostatic deflector 10 Electron gun 11 Electron beam 12 Target 13 Current detection circuit 14 Differentiator 15, 15A Deflection control system 16 Test pattern 17 Error detection Means 18 Correction data generating means 101 Main deflection area 17 Sub deflection area K11 to K15, K21 to K25, K31 to K35, K
41 to K45, K51 to K55, L11 to L15, L2
1 to L25, L31 to L35, L41 to L45, L51
To L55 line / interval pattern P11 to P15, P21 to P25, P31 to P35, P
41 to P45, P51 to P55 Error detection patterns Q11 to Q15, Q21 to Q25, Q31 to Q35, Q
41 to Q45, Q51 to Q55 Sub-sub deflection areas S11 to S15, S21 to S25, S31 to S35, S
41 to S45, S51 to S55 Sub deflection area

Continuation of front page (56) References JP-A-62-162340 (JP, A) JP-A-7-142352 (JP, A) JP-A-61-59727 (JP, A) JP-A-61-214342 (JP) JP-A-62-31118 (JP, A) JP-A-62-277724 (JP, A) JP-A-1-27150 (JP, A) JP-A-1-59749 (JP, A) 6-232034 (JP, A) JP-A-5-62890 (JP, A) US Patent 5,530,250 (US, A) US Patent 5,134,300 (US, A) (58) Fields investigated (Int. Cl. ⁶ , DB name ) H01L 21/027 H01J 37/305 H01J 37/147

Claims (6)

(57) [Claims] An electron gun for supplying an electron beam, an electromagnetic deflector and an electric field by a magnetic field for deflecting the electron beam to irradiate a desired position on the surface of a semiconductor substrate to be exposed.
C to perform the electrostatic deflector by a memory for storing a desired pattern corresponding deflection data, controls the entire apparatus to generate a read address of the deflection data from the memory
PU and the electromagnetic deflection in response to the supply of the deflection data
An electron beam exposure apparatus comprising: first and second deflection circuits for generating first and second deflection signals respectively corresponding to an electron deflector and an electric field deflector; a deflection position caused by a settling time of the electromagnetic deflector; a deflection error detection means for detecting an error, an electron beam exposure apparatus characterized by obtaining Bei the correction data generation means for generating correction data for correcting the deflection erroneous difference whether we said second deflection signal. Wherein said correcting data generating means, advance said polarized
Providing the correction data table storing values of the correction data corresponding to the direction position erroneous difference electron beam exposure apparatus according to claim 1, wherein. Wherein the deflection error detection means includes error amount reading means for reading the error amount of the deflection position error from the test pattern including a predetermined error detection pattern drawn on the surface of the semiconductor substrate, said test pattern but and a third shot pattern adjacent to the second and vertically adjacent to the left-right direction as the first shot pattern is a square pattern of a predetermined magnitude to the first shot pattern, the error detection pattern, the outer periphery of the first shot pattern first line / interval pattern and the second and third shot pattern in the vertical and lateral direction of the outer peripheral portion of the short lines having a predetermined width are arranged at a first pitch A second line / space pattern in which the short lines are arranged at a slightly different second pitch from the first pitch in the vertical and horizontal directions of the portion, respectively. Electron beam exposure apparatus according to claim 1, wherein the form has. Wherein said first and second pitch, the electron beam exposure apparatus of one another to claim 3, wherein a relation that main scale / vernier. 5. The electron beam drawing apparatus according to claim 3, wherein <br/> having a centerline which is slightly longer line than the previous Kitansen the center of the first and second line / interval pattern . 6. An electron gun for supplying an electron beam, an electromagnetic deflector and an electric field by a magnetic field for deflecting the electron beam so as to irradiate a desired position on the surface of a semiconductor substrate to be exposed.
C to perform the electrostatic deflector by a memory for storing a desired pattern corresponding deflection data, controls the entire apparatus to generate a read address of the deflection data from the memory
PU and the electromagnetic deflection in response to the supply of the deflection data
Beam deflection method for an electron beam exposure apparatus comprising first and second deflection circuits for generating first and second deflection signals respectively corresponding to each of a device and an electric field deflector. A first shot pattern, which is a square pattern of a predetermined size, a second shot pattern adjacent to the first shot pattern in the left-right direction, a third shot pattern adjacent to the first shot pattern in the vertical direction, and an outer periphery of the first shot pattern Short lines of a predetermined width are arranged at a first pitch in the vertical and horizontal directions of the portion, and a first line / spacing pattern having a center line slightly longer than the short line at the center thereof, and outer peripheries of the second and third shot patterns The short line is vertically aligned with the first pitch in the vertical and horizontal directions of the
And a test pattern was drawn including the error detection pattern formed and a second line / interval patterns arranged in a second pitch that a relationship of vernier having a center line, said first and second A matching line in which the positions of the short lines of each of the line / interval patterns coincide with each other is determined by an ordinal value from the center line, and the ordinal value is determined by the first and second pitches. From the relationship, the actual size of the shift between the first, second and third shot patterns is detected as a deflection error amount generated by the first deflector, and the second deflection signal of the second deflection signal is detected from the deflection error amount. An electron beam deflecting method characterized by generating correction data for correction.