JP2742624B2 - Alumina sintered body having metallized metal layer - Google Patents
Alumina sintered body having metallized metal layerInfo
- Publication number
- JP2742624B2 JP2742624B2 JP2048979A JP4897990A JP2742624B2 JP 2742624 B2 JP2742624 B2 JP 2742624B2 JP 2048979 A JP2048979 A JP 2048979A JP 4897990 A JP4897990 A JP 4897990A JP 2742624 B2 JP2742624 B2 JP 2742624B2
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- alumina
- metallized metal
- sintered body
- metallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Non-Insulated Conductors (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明はアルミナ(Al2O3)含有量が92.0重量%以上
のアルミナ質焼結体にメタライズ金属層を接合させたメ
タライズ金属層を有するアルミナ質焼結体の改良に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial application field) The present invention has a metallized metal layer in which a metallized metal layer is bonded to an alumina-based sintered body having an alumina (Al 2 O 3 ) content of 92.0% by weight or more. The present invention relates to improvement of an alumina-based sintered body.
(従来の技術) 従来、アルミナ質焼結体は電気絶縁性、化学的安定性
等の特性に優れていることから半導体素子を収容する半
導体素子収納用パッケージや回路配線を有する回路基板
等の電子部品に多用されており、アルミナ質焼結体の表
面には回路配線導体として使用されるメタライズ金属層
が被着接合されている。(Prior Art) Conventionally, alumina-based sintered bodies have excellent properties such as electrical insulation and chemical stability. Therefore, electronic devices such as a semiconductor element housing package for housing a semiconductor element and a circuit board having circuit wiring are used. A metallized metal layer used as a circuit wiring conductor is adhered and bonded to the surface of an alumina sintered body, which is widely used for components.
かかるアルミナ質焼結体表面のメタライズ金属層は通
常、タングステン(W)、モリブデン(Mo)等の高融点
金属粉末に有機溶剤、溶媒を添加してペースト状と成し
たものを未焼成アルミナ質成形体表面にスクリーン印刷
等により被着させ、しかる後、前記未焼成アルミナ質成
形体を還元雰囲気中、約1500℃の温度で焼成し、アルミ
ナ質焼結体のアルミナ結晶間に介在するガラス成分の一
部を高融点金属の金属粒子間に移行させ、アルミナ結晶
と高融点金属とをガラス成分を介し接合させることによ
ってアルミナ質焼結体の表面に被着接合される。The metallized metal layer on the surface of such an alumina sintered body is usually formed by adding an organic solvent and a solvent to a high melting point metal powder such as tungsten (W) or molybdenum (Mo) into a paste to form a non-sintered alumina. It is applied to the body surface by screen printing or the like, and thereafter, the unfired alumina-based molded body is fired at a temperature of about 1500 ° C. in a reducing atmosphere, and a glass component interposed between alumina crystals of the alumina-based sintered body is formed. A part is transferred between the metal particles of the high melting point metal, and the alumina crystal and the high melting point metal are bonded to each other via a glass component to be adhered and bonded to the surface of the alumina-based sintered body.
また前記メタライズ金属層の外表面には外部リード端
子を強固にロウ付けするために、或いはメタライズ金属
層の酸化腐食を有効に防止するために通常、ニッケル
(Ni)、金(Au)等の良導電性で、且つ耐蝕性に優れた
金属がメッキにより被着される。In order to firmly braze the external lead terminals to the outer surface of the metallized metal layer, or to effectively prevent oxidative corrosion of the metallized metal layer, a metal such as nickel (Ni) or gold (Au) is usually used. A metal that is conductive and has excellent corrosion resistance is deposited by plating.
(発明が解決しようとする課題) しかし乍ら、この従来のタングステン(W)、モリブ
デン(Mo)等、高融点金属を使用したメタライズ金属層
はアルミナ質焼結体のアルミナ(Al2O3)含有量が90.0
重量%以下であればアルミナ質焼結体のアルミナ結晶間
に介在するガラス成分の量が多く、該ガラス成分の高融
点金属粒子間への移行もスムーズとしてメタライズ金属
層をアルミナ質焼結体の強固に接合させることができる
ものの、アルミナ質焼結体のアルミナ(Al2O3)含有量
が92.0重量%を超えた場合、アルミナ結晶間に介在する
ガラス成分の量が少なくなり、該ガラス成分の高融点金
属粒子間への移行も悪くなってメタライズ金属層をアル
ミナ質焼結体に強固に被着接合させることができないと
いう欠点を有していた。(Problems to be Solved by the Invention) However, this conventional metallized metal layer using a high melting point metal such as tungsten (W) or molybdenum (Mo) is made of alumina (Al 2 O 3 ) which is an alumina sintered body. Content 90.0
If the amount is less than 10% by weight, the amount of the glass component interposed between the alumina crystals of the alumina-based sintered body is large, and the transition of the glass component between the high-melting metal particles is made smooth so that the metallized metal layer is formed on the alumina-based sintered body. Although it can be strongly bonded, when the alumina (Al 2 O 3 ) content of the alumina-based sintered body exceeds 92.0% by weight, the amount of glass components interposed between alumina crystals decreases, and the glass components Transfer between the high melting point metal particles is also deteriorated, and the metallized metal layer cannot be firmly adhered and bonded to the alumina sintered body.
また上記欠点を解消するために高融点金属粉末からな
るペーストを被着させた未焼成アルミナ成形体を約1600
℃の高温で焼成し、アルミナ質焼結体のアルミナ結晶間
に介在するガラス成分の高融点金属粒子間への移行を促
進することが考えられる。In addition, in order to eliminate the above-mentioned drawbacks, unfired alumina molded body coated with a paste made of a high melting point metal powder is about 1600.
It is conceivable to bake at a high temperature of ℃ to promote the transfer of the glass component interposed between the alumina crystals of the alumina sintered body between the high melting point metal particles.
しかし乍ら、高融点金属粉末からなるペーストを高温
で焼成した場合、高融点金属粉末はその粒子間の反応が
大きく進み、粒成長が進み過ぎて、所謂、オーバーシン
ター状態となってしまい、その結果、高融点金属粒子間
の空隙が広いものとなり、毛管現象による空隙内へのア
ルミナ質焼結体のアルミナ結晶間に介在するガラス成分
の移行が不充分となって依然としてメタライズ金属層を
アルミナ質焼結体に強固に被着接合させることができな
いという欠点を有していた。However, when the paste composed of the high melting point metal powder is fired at a high temperature, the reaction between the particles of the high melting point metal powder proceeds greatly, and the grain growth proceeds too much, resulting in a so-called oversintering state. As a result, the gap between the high-melting metal particles becomes wide, and the transition of the glass component interposed between the alumina crystals of the alumina-based sintered body into the gap due to the capillary phenomenon becomes insufficient, so that the metallized metal layer is still formed of alumina. It has a disadvantage that it cannot be firmly adhered and bonded to a sintered body.
そこで上記諸欠点を解消するために本願出願人は先に
メタライズ金属層としてタングステン(W)、モリブデ
ン(Mo)の少なくとも1種にレニウム(Re)を0.5乃至3
0.0重量%含有させたものを提案した。Therefore, in order to solve the above-mentioned drawbacks, the applicant of the present application firstly added 0.5 to 3 of rhenium (Re) to at least one of tungsten (W) and molybdenum (Mo) as a metallized metal layer.
Those containing 0.0% by weight were proposed.
かかるメタライズ金属層によればレニウム(Re)がタ
ングステン(W)、モリブデン(Mo)の粒子間反応を抑
制し、タングステン(W)、モリブデン(Mo)の粒子間
に微細な空隙を数多く残存させて毛管現象による空隙内
へのガラス成分の移行を容易となし、これによってメタ
ライズ金属層をアルミナ質焼結体表面に強固に被着接合
させることができる。According to such a metallized metal layer, rhenium (Re) suppresses the reaction between tungsten (W) and molybdenum (Mo) particles, leaving many fine voids between tungsten (W) and molybdenum (Mo) particles. The transfer of the glass component into the voids by the capillary phenomenon is facilitated, whereby the metallized metal layer can be firmly bonded to the surface of the alumina sintered body.
しかし乍ら、、アルミナ(Al2O3)含有量が92.0重量
%以上のアルミナ質焼結体の場合、アルミナ粒子間に介
在するガラス成分の絶対量が少ないためガラス成分がタ
ングステン(W)、モリブデン(Mo)の粒子間間隙を完
全に埋めることができずメタライズ金属層はその表面に
多量の空隙を有したものとなってしまう。そのためこの
メタライズ金属層表面にニッケル(Ni)や金(Au)等を
メッキにより被着させた場合、メッキ液が前記メタライ
ズ金属層の空隙に入り込んで残留し、メタライズ金属層
を腐食して変色させたり、メタライズ金属層をアルミナ
質焼結体上に溶出させ隣接するメタライズ金属層間を短
絡させたりするという解決すべき課題を有していた。However, in the case of an alumina sintered body having an alumina (Al 2 O 3 ) content of 92.0% by weight or more, the glass component is tungsten (W) because the absolute amount of the glass component interposed between the alumina particles is small. The gap between molybdenum (Mo) particles cannot be completely filled, and the metallized metal layer has a large amount of voids on its surface. Therefore, when nickel (Ni), gold (Au), or the like is applied to the surface of the metallized metal layer by plating, the plating solution enters and remains in the voids of the metallized metal layer, causing the metallized metal layer to corrode and discolor. Also, there is a problem to be solved such that the metallized metal layer is eluted on the alumina sintered body to short-circuit the adjacent metallized metal layers.
(発明の目的) 本発明は上記緒欠点に鑑み案出されたもので、その目
的はアルミナ(Al2O3)含有量が92.0重量%以上のアル
ミナ質焼結体に、表面に変色等の原因となる空隙の形成
が殆どないメタライズ金属層を強固に被着接合させて成
るメタライズ金属層を有するアルミナ質焼結体を提供す
ることをその目的とするものである。(Object of the Invention) The present invention was devised in view of the above-mentioned drawbacks, and its object is to provide an alumina-based sintered body having an alumina (Al 2 O 3 ) content of 92.0% by weight or more, such as discoloration on the surface. It is an object of the present invention to provide an alumina-based sintered body having a metallized metal layer formed by firmly attaching and joining a metallized metal layer having almost no formation of voids that cause the metallized metal layer.
(課題を解決するための手段) 本発明のメタライズ金属層を有するアルミナ質焼結体
は、タングステン、モリブデンの少なくとも1種にレニ
ウムを0.5乃至30.0重量%、アルミナ、ジルコニアの少
なくとも1種を1.0乃至30.0重量%含有させて成るメタ
ライズ金属層をアルミナ含有量が92.0重量%以上のアル
ミナ質焼結体に接合させたことを特徴とするものであ
る。(Means for Solving the Problems) The alumina-based sintered body having a metallized metal layer according to the present invention is characterized in that at least one of tungsten and molybdenum contains 0.5 to 30.0% by weight of rhenium and at least one of alumina and zirconia has a content of 1.0 to 1.0. A metallized metal layer containing 30.0% by weight is bonded to an alumina sintered body having an alumina content of 92.0% by weight or more.
本発明のメタライズ金属層において含有されるレニウ
ム(Re)はタングステン(W)もしくはモリブデン(M
o)の粒子間反応を抑制するための成分であり、その含
有量が0.5重量%未満であると所望する前記性質は付与
されず、また30.0重量%を超えるとレニウム(Re)がタ
ングステン(W)、モリブデン(Mo)と金属間化合物を
生成し、メタライズ金属層の電気抵抗が大きなものにな
ってしまう。そのためレニウム(Re)はその含有量が0.
5乃至30.0重量%の範囲に特定される。Rhenium (Re) contained in the metallized metal layer of the present invention is tungsten (W) or molybdenum (M).
o) is a component for suppressing the interparticle reaction. If the content is less than 0.5% by weight, the above-mentioned desired properties are not imparted. If the content exceeds 30.0% by weight, rhenium (Re) becomes tungsten (W). ), An intermetallic compound is generated with molybdenum (Mo), and the electrical resistance of the metallized metal layer becomes large. Therefore, the content of rhenium (Re) is 0.
It is specified in the range of 5 to 30.0% by weight.
またアルミナ(Al2O3)、ジルコニア(ZrO2)はタン
グステン(W)、モリブデン(Mo)の粒子間に移行する
ガラス成分の絶対量の不足を補填するとともにガラス成
分がタングステン(W)、モリブデン(Mo)の全ての粒
子間を埋めるようガラス成分の移行を促進する成分であ
り、その含有量が1.0重量%未満であると前記性質は付
与されず、また30.0重量%を超えるとメタライズ金属層
の電気抵抗が大幅に増大し、半導体素子収納用パッケー
ジや配線基板等の回路配線導体として不向きになるため
アルミナ(Al2O3)、ジルコニア(ZrO2)の含有量は1.0
乃至30.0重量%の範囲に特定される。Alumina (Al 2 O 3 ) and zirconia (ZrO 2 ) compensate for the shortage of the absolute amount of the glass component transferred between the particles of tungsten (W) and molybdenum (Mo), and the glass component is tungsten (W) and molybdenum (Mo). (Mo) is a component that promotes the migration of the glass component so as to fill in all the particles. If the content is less than 1.0% by weight, the above properties are not provided. If the content exceeds 30.0% by weight, the metallized metal layer Greatly increases the electrical resistance of the material, making it unsuitable for circuit wiring conductors such as semiconductor element storage packages and wiring boards, so that the content of alumina (Al 2 O 3 ) and zirconia (ZrO 2 ) is 1.0
To 30.0% by weight.
尚、アルミナ(Al2O3)、ジルコニア(ZrO2)はその
粒径が1.0μmを越えるとメタライズ金属層表面にアル
ミナ(Al2O3)、ジルコニア(ZrO2)が露出してしま
い、メタライズ金属層表面にニッケル(Ni)、金(Au)
等をメッキする際、そのメッキ金属層の被着が疎らとな
りメタライズ金属層に外部リード端子等を強固にロウ付
けすることができなくなったり、外観不良を発生したり
するためアルミナ(Al2O3)、ジルコニア(ZrO2)はそ
の粒径を1.0μm以下としておくことが好ましい。When the particle size of alumina (Al 2 O 3 ) and zirconia (ZrO 2 ) exceeds 1.0 μm, alumina (Al 2 O 3 ) and zirconia (ZrO 2 ) are exposed on the surface of the metallized metal layer, and Nickel (Ni), gold (Au) on metal layer surface
When plating metal or the like, the adherence of the plated metal layer becomes sparse, and it becomes impossible to firmly braze the external lead terminals and the like to the metallized metal layer, or appearance defects occur, so that alumina (Al 2 O 3 ), And zirconia (ZrO 2 ) preferably have a particle size of 1.0 μm or less.
(実施例) 次に本発明を実施例に基づいて説明する。(Examples) Next, the present invention will be described based on examples.
実施例1 まず出発原料として粒径1乃至5μmのタングステン
(W)、モリブデン(Mo)、レニウム(Re)と粒径0.6
μmのアルミナ(Al2O3)、ジルコニア(ZrO2)を第1
表に示す値となるように秤量し、これに有機溶剤、溶媒
を添加すると共に混練機で10時間混練し、メタライズ金
属層用ペースト試料を得る。Example 1 First, tungsten (W), molybdenum (Mo), rhenium (Re) having a particle size of 1 to 5 μm as a starting material and a particle size of 0.6 were used.
μm alumina (Al 2 O 3 ) and zirconia (ZrO 2 )
An organic solvent and a solvent are added thereto, and the mixture is kneaded with a kneader for 10 hours to obtain a metallized metal layer paste sample.
尚、試料番号1、14、27は本発明品と比較するための
比較試料であり、従来一般に使用されているメタライズ
金属層用ペーストである。Sample Nos. 1, 14, and 27 are comparative samples for comparison with the product of the present invention, and are metallized metal layer pastes generally used conventionally.
かくして得られたメタライズ金属層用ペースト試料を
使用してアルミナ(Al2O3)の含有量が90.0重量%、92.
0重量%、95.0重量%である未焼成アルミナ質成形体の
夫々の外表面に長さ10.0mm、幅0.5mm、厚さ20μmのバ
ターン20個を0.3mmの間隔をおいてスクリーン印刷法に
より印刷し、次ぎにこれを還元雰囲気(窒素−水素雰囲
気)中、1550℃もしくは1600℃の温度で焼成しアルミナ
質焼結体の表面にメタライズ金属層を被着接合させる。
そして次ぎにメタライズ金属層の電気抵抗を抵抗測定機
で測定し、その平均値を各メタライズ金属層の電気抵抗
値として求めた。Using the metallized metal layer paste sample thus obtained, the content of alumina (Al 2 O 3 ) was 90.0% by weight and 92.0% by weight.
20 patterns of 10.0mm long, 0.5mm wide and 20μm thick are printed on the outer surface of each of the unfired alumina moldings of 0wt% and 95.0wt% by screen printing at intervals of 0.3mm. Then, this is fired at a temperature of 1550 ° C. or 1600 ° C. in a reducing atmosphere (nitrogen-hydrogen atmosphere), and a metallized metal layer is adhered and bonded to the surface of the alumina sintered body.
Then, the electric resistance of the metallized metal layer was measured by a resistance measuring instrument, and the average value was determined as the electric resistance value of each metallized metal layer.
また、上記各アルミナ質焼結体の表面に1.5mm角のメ
タライズ金属層を被着形成し、これに1.0mm角、長さ40.
0mmの42Alloy(Fe-Ni合金)から成る金属柱の一端面を
銀ロウ(Ag:72%、Cu:28%)を介してロウ付けし、しか
る後、金属柱のロウ付け部と反対の端を垂直方向に引っ
張り、メタライズ金属層がアルミナ質焼結体から剥がれ
た際の引っ張り強度を調べ、その平均値をメタライズ金
属層の接合強度として算出した。Also, a 1.5 mm square metallized metal layer was formed on the surface of each of the alumina sintered bodies, and a 1.0 mm square, 40.
One end of a 0mm 42Alloy (Fe-Ni alloy) metal pillar is brazed through silver brazing (Ag: 72%, Cu: 28%), and then the end opposite to the brazed part of the metal pillar Was pulled in the vertical direction, the tensile strength when the metallized metal layer was peeled off from the alumina sintered body was examined, and the average value was calculated as the bonding strength of the metallized metal layer.
尚、前記メタライズ金属層に金属柱をロウ付けする際
にはメタライズ金属層の外表面に厚さ1.5μmのNiメッ
キ層を被着させておいた。When a metal column was brazed to the metallized metal layer, a Ni plating layer having a thickness of 1.5 μm was applied to the outer surface of the metallized metal layer.
更に、上述と同様の方法によりアルミナ質焼結体表面
に長さ30.0mm、幅3.0mm、厚さ20μmのメタライズ金属
層を20個、被着接合させるとともに各メタライズ金属層
の表面に厚さ1.5μmのニッケル(Ni)メッキ層を被着
させ、これをMIL-STD-883-1004に規定の温湿度サイクル
試験を240時間(10サイクル)行うとともに各メタライ
ズ金属層の外表面を顕微鏡により観察し、変色している
ものの数を数えた。Further, 20 metallized metal layers having a length of 30.0 mm, a width of 3.0 mm and a thickness of 20 μm were adhered to and bonded to the surface of the alumina-based sintered body in the same manner as described above, and a thickness of 1.5 mm was applied to the surface of each metallized metal layer. A nickel (Ni) plating layer with a thickness of μm was deposited and subjected to a temperature and humidity cycle test specified in MIL-STD-883-1004 for 240 hours (10 cycles), and the outer surface of each metallized metal layer was observed with a microscope. The number of discolored things was counted.
上記の結果を第1表に示す。 The results are shown in Table 1.
実施例2 次ぎにタングステン(W)、モリブデン(Mo)、レニ
ウム(Re)の粒径を1μmとし、アルミナ(Al2O3)、
ジルコニア(ZrO2)の粒径を第2表に示す値として実施
例1と同様の方法によってアルミナ質焼結体の表面に1.
5mm角のメタライズ金属層を被着接合させ、次ぎに前記
メタライズ金属層に1.0mm角、長さ40.0mmの42Alloy(Fe
-Ni合金)から成る金属柱の一端面を銀ロウ(Ag:72%、
Cu:28%)を介してロウ付けし、しかる後、金属柱のロ
ウ付け部と反対の端を垂直方向に引っ張り、金属柱がメ
タライズ金属層より剥がれた際の引っ張り強度を調べ、
その平均値をメタライズ金属層と金属柱の接合強度とし
て算出した。 Example 2 Next, the particle diameter of tungsten (W), molybdenum (Mo), and rhenium (Re) was set to 1 μm, and alumina (Al 2 O 3 )
The particle diameter of zirconia (ZrO 2 ) was set to the value shown in Table 2 to be applied to the surface of the alumina-based sintered body in the same manner as in Example 1.
A 5 mm square metallized metal layer is adhered and bonded, and then a 1.0 mm square, 40.0 mm long 42Alloy (Fe
-Ni alloy) has one end face of a silver pillar (Ag: 72%,
(Cu: 28%) and then braided, and then pull the end opposite to the brazed part of the metal column vertically to check the tensile strength when the metal column was peeled off from the metallized metal layer,
The average value was calculated as the bonding strength between the metallized metal layer and the metal column.
尚、前記メタライズ金属層に金属柱をロウ付けする際
にはメタライズ金属層の外表面に厚さ1.5μmのNiメッ
キ層を被着させておいた。When a metal column was brazed to the metallized metal layer, a Ni plating layer having a thickness of 1.5 μm was applied to the outer surface of the metallized metal layer.
上記の結果を第2表に示す。 The results are shown in Table 2.
(発明の効果) 上記実験結果からも判るように、従来のメタライズ金
属層はアルミナ質焼結体のアルミナ(Al2O3)含有量が9
0.0重量%であり、焼成温度が1550℃の時には接合強度
が5.8kg/mm2と大きな値を示し、メタライズ金属層がア
ルミナ質焼結体に強固に被着接合するものの、アルミナ
質焼結体のアルミナ(Al2O3)含有量が92.0重量%を超
え、焼成温度が1600℃の時には接合強度が2.6kg/mm2以
下の値となり、メタライズ金属層の接合強度が大きく低
下してしまう。これに対し、本発明のメタライズ金属層
はアルミナ質焼結体のアルミナ(Al2O3)含有量が92.0
重量%以上、焼成温度が1600℃の高温であったとしても
メタライズ金属層の接合強度が4.3kg/mm2以上の値を示
し、メタライズ金属層がアルミナ質焼結体に極めて強固
に被着接合していることが判る。 (Effect of the Invention) As can be seen from the above experimental results, the conventional metallized metal layer has an alumina (Al 2 O 3 ) content of 9
When the firing temperature is 1550 ° C, the bonding strength shows a large value of 5.8 kg / mm 2. Although the metallized metal layer is firmly adhered to and bonded to the alumina sintered body, When the alumina (Al 2 O 3 ) content exceeds 92.0% by weight and the firing temperature is 1600 ° C., the bonding strength is 2.6 kg / mm 2 or less, and the bonding strength of the metallized metal layer is greatly reduced. On the other hand, the metallized metal layer of the present invention has an alumina (Al 2 O 3 ) content of 92.0
Even if the baking temperature is as high as 1600 ° C or more, the bonding strength of the metallized metal layer shows a value of 4.3 kg / mm 2 or more, and the metallized metal layer is extremely firmly bonded to the alumina sintered body. You can see that it is.
またアルミナ(Al2O3)、ジルコニア(ZrO2)の粒径
を1μm以下としておくと、アルミナ(Al2O3)、ジル
コニア(ZrO2)がメタライズ金属層表面に露出すること
はなく、メタライズ金属層に外部リード端子等を強固に
取着することも可能となることが判る。When the particle size of alumina (Al 2 O 3 ) and zirconia (ZrO 2 ) is set to 1 μm or less, alumina (Al 2 O 3 ) and zirconia (ZrO 2 ) are not exposed on the surface of the metallized metal layer, and are not metallized. It can be seen that it is also possible to firmly attach external lead terminals and the like to the metal layer.
更に、本発明のメタライズ金属層はその電気抵抗が30
m Ω/SQ以下の小さなものであり、半導体素子収納用パ
ッケージや配線基板等の回路配線導体としてその使用に
充分供することが可能となる。Further, the metallized metal layer of the present invention has an electric resistance of 30.
It is as small as mΩ / SQ or less, and can be sufficiently used as a circuit wiring conductor for a package for housing semiconductor elements, a wiring board, and the like.
また更に本発明のメタライズ金属層は温湿度サイクル
試験でも変色が殆ど発生せず、メタライズ金属層を構成
するタングステン(W)、モリブデン(Mo)の粒子間間
隙がアルミナ質焼結体のガラス成分により完全に埋めら
れていることも判る。Further, the metallized metal layer of the present invention hardly discolors even in a temperature / humidity cycle test, and the intergranular gap of tungsten (W) and molybdenum (Mo) constituting the metallized metal layer is determined by the glass component of the alumina-based sintered body. You can see that it is completely buried.
よって本発明のメタライズ金属層を有するアルミナ質
焼結体はメタライズ金属層の表面に空隙が形成されるこ
となくアルミナ質焼結体に強固に接合し、半導体素子を
収容する半導体素子収納用パッケージや回路配線導体を
有する回路基板等の電子部品に好適に使用される。Therefore, the alumina-based sintered body having the metallized metal layer of the present invention is firmly bonded to the alumina-based sintered body without forming a void on the surface of the metallized metal layer, and a semiconductor element housing package for housing a semiconductor element or the like. It is suitably used for electronic components such as circuit boards having circuit wiring conductors.
Claims (1)
種にレニウムを0.5乃至30.0重量%、アルミナ、ジルコ
ニアの少なくとも1種を1.0乃至30.0重量%含有させて
成るメタライズ金属層をアルミナ含有量が92.0重量%以
上のアルミナ質焼結体に接合させたことを特徴とするメ
タライズ金属層を有するアルミナ質焼結体。At least one of tungsten and molybdenum
A metallized metal layer containing 0.5 to 30.0% by weight of rhenium and 1.0 to 30.0% by weight of at least one of alumina and zirconia is bonded to an alumina-based sintered body having an alumina content of 92.0% by weight or more. An alumina-based sintered body having a metallized metal layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2048979A JP2742624B2 (en) | 1990-02-27 | 1990-02-27 | Alumina sintered body having metallized metal layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2048979A JP2742624B2 (en) | 1990-02-27 | 1990-02-27 | Alumina sintered body having metallized metal layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03252380A JPH03252380A (en) | 1991-11-11 |
JP2742624B2 true JP2742624B2 (en) | 1998-04-22 |
Family
ID=12818369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2048979A Expired - Fee Related JP2742624B2 (en) | 1990-02-27 | 1990-02-27 | Alumina sintered body having metallized metal layer |
Country Status (1)
Country | Link |
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JP (1) | JP2742624B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6068912A (en) | 1998-05-01 | 2000-05-30 | International Business Machines Corporation | Platible non-metallic filler material for metallurgical screening paste |
-
1990
- 1990-02-27 JP JP2048979A patent/JP2742624B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH03252380A (en) | 1991-11-11 |
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