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JP2724183B2 - Manufacturing method of information recording medium - Google Patents

Manufacturing method of information recording medium

Info

Publication number
JP2724183B2
JP2724183B2 JP63312935A JP31293588A JP2724183B2 JP 2724183 B2 JP2724183 B2 JP 2724183B2 JP 63312935 A JP63312935 A JP 63312935A JP 31293588 A JP31293588 A JP 31293588A JP 2724183 B2 JP2724183 B2 JP 2724183B2
Authority
JP
Japan
Prior art keywords
recording
film
recording medium
protective film
erasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63312935A
Other languages
Japanese (ja)
Other versions
JPH02158935A (en
Inventor
勲 森本
勝 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Original Assignee
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Kogyo KK filed Critical Asahi Kasei Kogyo KK
Priority to JP63312935A priority Critical patent/JP2724183B2/en
Publication of JPH02158935A publication Critical patent/JPH02158935A/en
Application granted granted Critical
Publication of JP2724183B2 publication Critical patent/JP2724183B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、光学的手段で情報を記録・再生・消去でき
る情報記録媒体の製造法に関するものであり、更に詳し
く言えば、記録・消去の繰り返し特性に優れた情報記録
媒体の製造法に関するものである。
Description: TECHNICAL FIELD The present invention relates to a method for manufacturing an information recording medium on which information can be recorded / reproduced / erased by optical means. More specifically, the present invention relates to a method for recording / erasing information. The present invention relates to a method for producing an information recording medium having excellent repetition characteristics.

(従来の技術) 近年、情報量の増大に伴ないレーザー光線を利用して
高密度な情報の記録・再生を行うことのできる光デイス
クの応用が盛んに行われている。光デイスクには、一度
のみ記録可能な追記型と記録した情報を消去し何度も使
用可能な書換え可能型がある。追記型光デイスクは、主
として文書や画像の永久保存ファイルとして既に用いら
れている。
(Prior Art) In recent years, an optical disk capable of recording and reproducing high-density information by using a laser beam accompanying an increase in the amount of information has been actively used. Optical discs include a write-once type, which can be written only once, and a rewritable type, which can erase recorded information and can be used many times. The write-once optical disk is already used mainly as a permanent storage file for documents and images.

しかし、永久保存が必要な用途以外では情報の書換え
を行なうことの出来る書換え可能型光デイスクが要望さ
れている。このような情報記録媒体において、書換え可
能な繰り返し回数は用途によって異なるが少なくとも10
0回以上は必要とされる。特にコンピューターの外部メ
モリに用いる場合は106回の繰り返し回数が必要とされ
ている。
However, there is a demand for a rewritable optical disk capable of rewriting information except for applications requiring permanent storage. In such an information recording medium, the number of rewritable repetitions depends on the application, but at least 10
Zero or more times are required. Especially when used in an external memory computer it is needed number of repetitions of 106 times.

書換え可能型光デイスクとしては、磁化方向によって
反射光の偏光面に差が生じることを利用して情報の再生
を行う光磁気方式と結晶構造の違いによって反射率や透
過率が異なることを利用して情報の再生を行う相変化方
式がある。
As a rewritable optical disk, the difference in reflectivity and transmittance due to the difference in crystal structure and the magneto-optical method in which information is reproduced using the difference in the polarization plane of reflected light depending on the magnetization direction is used. There is a phase change method for reproducing information by using a phase change method.

上記のいづれの方式においても、次に示す2つの共通
点がある。第1点は、情報の記録及び消去をレーザー光
による記録膜の加熱により行う、いわゆるヒートモード
記録であることである。光磁気方式の場合は、記録膜の
加熱と共に外部磁場を印加して記録膜の磁化方向を変化
させることにより情報の記録及び消去を行う。一方、相
変化方式の場合は、加熱時の最高到達温度と冷却時の冷
却速度によって結晶構造を変化させることにより情報の
記録及び消去を行う。いづれの場合も記録膜の加熱によ
り記録・消去を行うヒートモード記録であることに変り
はない。第2の共通点は、用いる記録媒体の構成に関す
るものである。すなわち、いづれの方式においても用い
る記録媒体は材質は異なるが、少なくとも基板、記録膜
及び誘電体からなる保護膜により構成され、保護膜は記
録膜に接して設けられているという点である。場合によ
っては反射層を設けることもある。代表的な層構成とし
ては、第1図に示すごとく基板1上に保護膜2、記録膜
3、保護膜4を順次積層したものをあげることが出来
る。ここで保護膜は、繰り返し記録・消去時における基
板の熱変形や記録膜の変形を防止すると共に、記録膜の
酸化等を防ぐ役割を果す。特に相変化方式の場合は、記
録または消去時に記録膜をいったん融点以上の高温に加
熱するために耐熱性の保護膜が要求される。
Both of the above methods have the following two common points. The first point is that the recording and erasing of information are performed by heating a recording film with a laser beam, that is, a so-called heat mode recording. In the case of the magneto-optical method, information is recorded and erased by changing the magnetization direction of the recording film by applying an external magnetic field while heating the recording film. On the other hand, in the case of the phase change method, recording and erasing of information are performed by changing the crystal structure according to the maximum temperature reached during heating and the cooling rate during cooling. In any case, there is no change to the heat mode recording in which recording / erasing is performed by heating the recording film. The second common point relates to the configuration of the recording medium used. In other words, the recording medium used in any of the methods is made of a different material, but is composed of at least a substrate, a recording film, and a protective film made of a dielectric, and the protective film is provided in contact with the recording film. In some cases, a reflective layer may be provided. As a typical layer structure, there can be mentioned a structure in which a protective film 2, a recording film 3, and a protective film 4 are sequentially laminated on a substrate 1 as shown in FIG. Here, the protective film serves to prevent thermal deformation of the substrate and deformation of the recording film at the time of repeated recording / erasing, and also to prevent oxidation of the recording film. In particular, in the case of the phase change method, a heat-resistant protective film is required in order to temporarily heat the recording film to a high temperature equal to or higher than the melting point during recording or erasing.

以上の2つの共通点から、いづれの方式においても用
いる保護膜としては少なくとも次のような特性が要求さ
れる。
From the above two common points, at least the following characteristics are required for the protective film used in any of the methods.

耐熱性 記録及び消去における加熱時に熱損傷を生じないこと 低熱伝導性 発熱した熱の放散が多く加熱に高いレーザーパワーを
要しないようにある程度熱伝導率が低いこと 耐熱サイクル性 記録と消去の繰り返しにおいて、熱物性、機械物性等
の変化が極力小さいこと 低透湿性 記録膜の腐食を防ぐために透湿性が低いこと 特に相変化方式の場合は、記録膜の加熱後の冷却速度
により出来る結晶構造が異なることと、記録または消去
時に記録膜をいったん融点以上の高温に加熱するために
耐熱性と共に耐熱サイクル性に優れた保護膜が要求され
る。
Heat resistance No thermal damage during heating during recording and erasing Low thermal conductivity Low heat conductivity to some extent so that heat generated is dissipated much and high laser power is not required for heating Heat cycle property In repeated recording and erasing Changes in thermal, mechanical, mechanical properties, etc. are as small as possible Low moisture permeability Low moisture permeability to prevent corrosion of the recording film Especially in the case of the phase change method, the crystal structure that can be formed depends on the cooling rate after heating the recording film In addition, since the recording film is once heated to a temperature higher than the melting point at the time of recording or erasing, a protective film having excellent heat resistance and heat cycle resistance is required.

上記特性のうち、及びは主に使う材料によって左
右されるが、及びは材料と共に成膜法に大きく依存
する。
Of the above characteristics, and depends mainly on the material used, and greatly depends on the film formation method together with the material.

(発明が解決しようとする問題点) 一般的に保護膜は蒸着法やスパッタ法等によって成膜
することが可能であるが、スパッタ法が量産に適してい
る。スパッタ法に用いる放電ガスとしてはスパッタ率や
コストの点でArガスが最もよく用いられる。
(Problems to be Solved by the Invention) Generally, a protective film can be formed by a vapor deposition method, a sputtering method, or the like, but the sputtering method is suitable for mass production. As a discharge gas used for the sputtering method, Ar gas is most often used in terms of sputtering rate and cost.

しかし従来のArガスを用いたスパッタ法で成膜した保
護膜を使った場合、記録・消去の繰り返しを多数回行う
と特性が劣化し実用に供し得ないという問題点があっ
た。特に相変化方式の記録媒体においては、繰り返しに
よる特性劣化は深刻な問題であった。具体的には、記録
・消去を繰り返していくと消去が不十分となり、前に記
録した信号の消し残りが大きくなってしまうという現象
が生じる。
However, in the case of using a protective film formed by a conventional sputtering method using Ar gas, there is a problem that if recording and erasing are repeated many times, the characteristics are deteriorated and cannot be put to practical use. In particular, in a phase change type recording medium, the characteristic deterioration due to repetition was a serious problem. More specifically, when recording and erasing are repeated, erasure becomes insufficient, and a phenomenon occurs in which a previously recorded signal has a large unerased residue.

本発明者らはこの原因を調べた結果、記録・消去を繰
り返していくと保護膜が一種の焼結作用により緻密にな
って熱物性が変化して行くものと推察した。特に繰り返
し回数の増加と共に緻密化に伴い熱伝導率が増加し、こ
れにより記録膜がその結晶化に必要な温度以上に保持さ
れる時間が短かくなり、その結果消去が不十分になると
考えられる。
The present inventors have investigated the cause, and inferred that as recording and erasing are repeated, the protective film becomes dense due to a kind of sintering action, and the thermal properties change. In particular, it is considered that the thermal conductivity increases with densification as the number of repetitions increases, thereby shortening the time that the recording film is kept at a temperature higher than the temperature required for its crystallization, resulting in insufficient erasing. .

また、上記の繰り返しによる特性劣化と共に、従来の
スパッタ法で成膜した保護膜は、成膜時にArや酸素等の
ガスが膜中に取り込まれるために空孔の多い膜となり、
その結果記録膜の腐食防止という点からも十分満足のい
くものではなかった。
Also, along with the characteristic deterioration due to the repetition of the above, the protective film formed by the conventional sputtering method becomes a film with many holes because a gas such as Ar or oxygen is taken into the film at the time of film formation,
As a result, it was not satisfactory in terms of preventing corrosion of the recording film.

(問題点を解決するための手段) 本発明は、かかる問題点を解決した情報記録媒体の製
造法に関するものであり、基板上に記録膜及び保護膜を
設けた情報記録媒体の製造法において、該保護膜をArと
H2の混合ガスを用いてスパッタリング法により膜形成を
行うことを特徴とする情報記録媒体の製造法である。
(Means for Solving the Problems) The present invention relates to a method for manufacturing an information recording medium which has solved the above problems, and a method for manufacturing an information recording medium having a recording film and a protective film provided on a substrate. Ar and the protective film
This is a method for producing an information recording medium, wherein a film is formed by a sputtering method using a mixed gas of H 2 .

Arガスに混合するH2の量としては5容量%から50容量
%が好ましい。
50 volume% to 5% by volume as the amount of H 2 is mixed in Ar gas is preferable.

スパッタガスとしては反応性スパッタを行う場合は、
ArとH2に更に酸素や窒素を添加することが出来る。すな
わち、金属または半金属のターゲットを用いて酸化物や
窒化物の保護膜を形成する場合は、酸素や窒素を添加し
て反応性スパッタを行う方が成膜速度が早く量産に適す
る。
When performing reactive sputtering as a sputtering gas,
It can further adding oxygen or nitrogen to Ar and H 2. That is, in the case of forming an oxide or nitride protective film using a metal or metalloid target, reactive sputtering with addition of oxygen or nitrogen is faster and more suitable for mass production.

保護膜に用いることの出来る材料としては、特に制限
はなく、SiO2、Si3N4、ZnS、MgF2等の金属や半金属の酸
化物、窒化物、硫化物及びフッ化物またはこれらの混合
物等が広く用いられる。
The material that can be used for the protective film is not particularly limited, and includes oxides, nitrides, sulfides, and fluorides of metals and metalloids such as SiO 2 , Si 3 N 4 , ZnS, and MgF 2 or a mixture thereof. Are widely used.

記録膜についても特に制限はなく、遷移金属と希土類
元素からなる光磁気用記録膜、TeやSeの合金からなる相
変化用記録膜または有機色素からなる記録膜等が用いら
れる。記録膜は蒸着法、スパッタ法または塗布法等によ
って形成されるが、保護膜と同一の真空槽内で成膜する
ことが好ましい。
The recording film is not particularly limited, and a magneto-optical recording film made of a transition metal and a rare earth element, a phase change recording film made of an alloy of Te or Se, a recording film made of an organic dye, and the like are used. The recording film is formed by a vapor deposition method, a sputtering method, a coating method, or the like, and is preferably formed in the same vacuum chamber as the protective film.

(作用) ArとH2の混合ガスを用いると、膜中における空孔が除
去され膜の密度が向上するために繰り返しによる熱物性
の変化が小さく、特性劣化を大巾に抑制出来る。また膜
が緻密なために水分や酸素の内部への浸入を防ぎ、記録
膜の腐食防止効果も大きい。更に副次的に膜の内部応力
も軽減でき下地との密着力も向上する。
(Operation) When a mixed gas of Ar and H 2 is used, vacancies in the film are removed and the density of the film is improved, so that the change in thermophysical properties due to repetition is small, and the characteristic deterioration can be largely suppressed. Further, since the film is dense, it is possible to prevent moisture and oxygen from entering the inside, and the effect of preventing corrosion of the recording film is great. Furthermore, the internal stress of the film can be reduced as a secondary effect, and the adhesion to the base can be improved.

実施例 外径130mm、厚さ1.2mmのポリカーボネート基板をスパ
ッタ槽にセットと、5×10-7Torrまで真空排気を行った
後、SiO2(100nm)、Ge-Te-Sb記録膜(80nm)、SiO2(1
00nm)の順にスパッタ法により順次膜形成を行った。各
層のスパッタ条件は第1表のごとくである。
EXAMPLE A polycarbonate substrate having an outer diameter of 130 mm and a thickness of 1.2 mm was set in a sputtering tank, and after evacuating to 5 × 10 −7 Torr, SiO 2 (100 nm), Ge-Te-Sb recording film (80 nm) , SiO 2 (1
(00 nm) in that order by sputtering. The sputtering conditions for each layer are as shown in Table 1.

比較例として、ArガスのみでSiO2をスパッタした以外
は実施例と全く同一のサンプルを作製した。
As a comparative example, a sample exactly the same as the example was prepared except that SiO 2 was sputtered only with Ar gas.

これらのデイスクを1800rpmで回転させ、ポリカーボ
ネート基板越しに半導体レーザーの光を集光させて照射
し、以下の評価を行った。
These disks were rotated at 1800 rpm, and the light of a semiconductor laser was condensed and irradiated over a polycarbonate substrate, and the following evaluation was performed.

先づデイスク上の直径60mmの所にレーザー光をデイス
ク一周分の間連続発光させて初期結晶化を行った。次に
2MHzのパルス信号を記録した後、C/N比を測定した。こ
の後、レーザー光をデイスク一周分の間連続発光させて
消去動作を行った後の、C/N比を測定した。以上の記録
と消去を繰り返し行った結果を第2図及び第3図に示
す。消去後のC/N比を消し残りとした。
First, a laser beam was continuously emitted at a position of 60 mm in diameter on the disk for one round of the disk to perform initial crystallization. next
After recording a 2 MHz pulse signal, the C / N ratio was measured. Thereafter, the C / N ratio was measured after an erasing operation was performed by continuously emitting laser light for one round of the disk. FIGS. 2 and 3 show the results of repeating the above recording and erasing. The C / N ratio after the erasure was left unerased.

第2図から、比較例では100回の繰り返し以後消し残
りが増加するが、第3図から実施例では104回後もC/N
比、消し残り共に初期と全く変っていないことがわか
る。
From Figure 2, but unerased 100 iterations after the comparative example increases after 10 four times in the embodiment of Figure 3 also C / N
It can be seen that both the ratio and the rest remain unchanged from the initial stage.

更にこれらのデイスクを温度80℃、湿度80%の環境下
に500時間放置した。比較例では、ピンホールが多数発
生しノイズの増加もみられたが、実施例ではピンホール
の発生はなく、ノイズの増加もみられなかった。
Further, these disks were left under an environment of a temperature of 80 ° C. and a humidity of 80% for 500 hours. In the comparative example, a large number of pinholes were generated and an increase in noise was observed, but in the example, no pinhole was generated and no increase in the noise was observed.

(発明の効果) 以上述べたように本発明によれば、密度の高い緻密な
保護膜を形成することができ、 (1) 繰り返しによる特性劣化が少ない (2) 耐腐食性が高い 信頼性の高い情報記録媒体を提供することが出来る。
(Effects of the Invention) As described above, according to the present invention, a dense protective film having a high density can be formed, and (1) the characteristic deterioration due to repetition is small (2) the corrosion resistance is high A high information recording medium can be provided.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明による情報記録媒体の構造の一態様を示
す断面図であり、第2図及び第3図はそれぞれ比較例及
び実施例のデイスクの記録・消去の繰り返し特性を示す
グラフである。 1……基板 2、4……保護膜 3……記録膜
FIG. 1 is a cross-sectional view showing one embodiment of the structure of an information recording medium according to the present invention, and FIGS. 2 and 3 are graphs showing the recording / erasing repetition characteristics of a disk of a comparative example and an example, respectively. . 1 ... substrate 2, 4 ... protective film 3 ... recording film

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】基板上に記録膜及び保護膜を設けた情報記
録媒体の製造法において、該保護膜をArとH2の混合ガス
を用いてスパッタリング法により膜形成を行うことを特
徴とする情報記録媒体の製造法
1. A method for manufacturing an information recording medium having a recording film and a protective film provided on a substrate, wherein the protective film is formed by a sputtering method using a mixed gas of Ar and H 2. Manufacturing method of information recording medium
【請求項2】ArとH2の混合ガスがArガスに5容量%から
50容量%のH2ガスを混合したものであることを特徴とす
る請求項1の情報記録媒体の製造法
2. A mixed gas of Ar and H 2 containing 5% by volume of Ar gas.
2. The method for producing an information recording medium according to claim 1, wherein the mixture is a mixture of 50% by volume of H 2 gas.
JP63312935A 1988-12-13 1988-12-13 Manufacturing method of information recording medium Expired - Lifetime JP2724183B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63312935A JP2724183B2 (en) 1988-12-13 1988-12-13 Manufacturing method of information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63312935A JP2724183B2 (en) 1988-12-13 1988-12-13 Manufacturing method of information recording medium

Publications (2)

Publication Number Publication Date
JPH02158935A JPH02158935A (en) 1990-06-19
JP2724183B2 true JP2724183B2 (en) 1998-03-09

Family

ID=18035244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63312935A Expired - Lifetime JP2724183B2 (en) 1988-12-13 1988-12-13 Manufacturing method of information recording medium

Country Status (1)

Country Link
JP (1) JP2724183B2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6453360A (en) * 1987-08-25 1989-03-01 Hitachi Maxell Optical recording medium and its production

Also Published As

Publication number Publication date
JPH02158935A (en) 1990-06-19

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