JP2692671B2 - Resonator type organic thin film EL device - Google Patents
Resonator type organic thin film EL deviceInfo
- Publication number
- JP2692671B2 JP2692671B2 JP7354362A JP35436295A JP2692671B2 JP 2692671 B2 JP2692671 B2 JP 2692671B2 JP 7354362 A JP7354362 A JP 7354362A JP 35436295 A JP35436295 A JP 35436295A JP 2692671 B2 JP2692671 B2 JP 2692671B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- organic thin
- type organic
- light
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 56
- 239000000758 substrate Substances 0.000 claims description 36
- 238000000605 extraction Methods 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000005342 ion exchange Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 50
- 239000011521 glass Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 13
- 230000005525 hole transport Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- -1 8- Hydroxyquinolinol aluminum Chemical compound 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 150000004866 oxadiazoles Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- ZXZKYYHTWHJHFT-UHFFFAOYSA-N quinoline-2,8-diol Chemical compound C1=CC(=O)NC2=C1C=CC=C2O ZXZKYYHTWHJHFT-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical class C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- MVWPVABZQQJTPL-UHFFFAOYSA-N 2,3-diphenylcyclohexa-2,5-diene-1,4-dione Chemical class O=C1C=CC(=O)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 MVWPVABZQQJTPL-UHFFFAOYSA-N 0.000 description 1
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910000542 Sc alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 125000000641 acridinyl group Chemical class C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- LUKDNTKUBVKBMZ-UHFFFAOYSA-N aluminum scandium Chemical compound [Al].[Sc] LUKDNTKUBVKBMZ-UHFFFAOYSA-N 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 150000001893 coumarin derivatives Chemical class 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical class C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229940097275 indigo Drugs 0.000 description 1
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 150000004033 porphyrin derivatives Chemical class 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
Landscapes
- Electroluminescent Light Sources (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、自発光型で、例え
ば薄型平面上の高精細な表示手段として用いられる有機
EL(エレクトロルミネッセンス)素子に関し、特に共
振器型の有機薄膜EL素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic EL (electroluminescence) device which is a self-luminous type and is used as a high-definition display means on a thin flat surface, and more particularly to a resonator type organic thin film EL device.
【0002】[0002]
【従来の技術】タング(Tang)らによって報告され
た新しいタイプの有機薄膜EL素子は、アプライド・フ
ィジックス・レターズ(Applied Physic
s Letters)、51巻、913ページ、198
7年に開示されており、フラット基板、陽極、正孔輸送
層、発光層、陰極によって構成されている。陽極として
は、フラットなガラス基板に形成された酸化インジウム
錫合金(ITO)、正孔輸送層1,1′−ビス(4−
N,N′−ジトリルアミノフェニル)シクロヘキサン
(以下、DTAPと略記する)、発光層はトリス(8−
ヒドロキシキノリノールアルミニウム)(以下、Alq
と略記する)及び陰極はマグネシウム−銀合金から形成
されている。2. Description of the Related Art A new type of organic thin film EL device reported by Tang et al. Is an Applied Physics Letters.
s Letters), 51, 913 pages, 198
It has been disclosed in 7 years, and is composed of a flat substrate, an anode, a hole transport layer, a light emitting layer, and a cathode. As the anode, an indium tin oxide alloy (ITO) formed on a flat glass substrate, a hole transport layer 1,1′-bis (4-
N, N′-ditolylaminophenyl) cyclohexane (hereinafter abbreviated as DTAP), the light emitting layer is tris (8-
Hydroxyquinolinol aluminum) (hereinafter Alq
And a cathode are formed of a magnesium-silver alloy.
【0003】タングらの有機薄膜EL素子の発光動作原
理は、大略以下のように考えられている。陽極から正孔
輸送層に注入された正孔は発光層界面に向かって移動す
る。陰極からは電子が発光層に注入され、発光層内を移
動する。正孔は正孔輸送層を経て発光層内に注入される
が、電子は正孔輸送層でブロックされるため、発光層の
正孔輸送層との界面近傍で電子と正孔とが再結合する。
このとき中性の安定な励起子が生成され、そのうち一重
項励起子は自然放出、すなわち発光を伴って基底準位へ
と自発遷移する。The light emitting operation principle of the organic thin film EL element of Tang et al. Is generally considered as follows. The holes injected from the anode into the hole transport layer move toward the light emitting layer interface. Electrons are injected into the light emitting layer from the cathode and move in the light emitting layer. Although holes are injected into the light-emitting layer through the hole-transporting layer, electrons are blocked by the hole-transporting layer, so that the electrons and holes recombine near the interface between the light-emitting layer and the hole-transporting layer. To do.
At this time, neutral stable excitons are generated, and the singlet excitons spontaneously emit, that is, spontaneously transition to the ground level with emission.
【0004】現在開発されている有機薄膜EL素子は、
基本的には、タングらの報告した素子構成及び材料の概
念を基に、素子構成の改良をはじめ有機材料や電極等の
改良が加えられ進展している。The organic thin film EL device currently being developed is
Basically, based on the concept of device structure and materials reported by Tung et al., Progress has been made by improving the device structure as well as organic materials and electrodes.
【0005】ドダバラプア(Dodabalapur)
らはこのような有機薄膜EL素子に共振器構造を導入し
た(米国特許5405710号)。従来の共振器型有機
薄膜EL素子の概念図を図5に示す。図5を参照して、
従来の共振器型有機薄膜EL素子は、ガラス基板1上に
誘電体多層膜からなる半透明反射鏡である多層膜反射鏡
2及びSiN膜3を形成し、その上にITO電極4(陽
極)、トリウェニルジアミン誘導体(以下、TADと略
記する)正孔輸送層5、Alq発光層6、Al電極7
(陰極)を形成してなる。電源8は、TAD正孔輸送層
5とAl電極7との間に接続されている。Dodaba lapur
Et al. Introduced a resonator structure into such an organic thin film EL element (US Pat. No. 5,405,710). A conceptual view of a conventional resonator type organic thin film EL element is shown in FIG. Referring to FIG.
In a conventional resonator type organic thin film EL element, a multilayer film reflecting mirror 2 and a SiN film 3 which are semi-transparent reflecting mirrors made of a dielectric multilayer film are formed on a glass substrate 1, and an ITO electrode 4 (anode) is formed thereon. , Triwenyldiamine derivative (hereinafter abbreviated as TAD) hole transport layer 5, Alq light emitting layer 6, Al electrode 7
(Cathode) is formed. The power supply 8 is connected between the TAD hole transport layer 5 and the Al electrode 7.
【0006】このような層構造を有する有機薄膜EL素
子においては、多層膜反射鏡2及びAl電極7により共
振器が構成されることになり、SiN膜3の厚さで決ま
る共振器の実効共振器長に応じた波長で伝搬する波動の
重ね合わせが生じ、単位角度、単位スペクトルでみた場
合にEL発光の増大が観測されることになる。In the organic thin film EL element having such a layer structure, a resonator is constituted by the multilayer film reflecting mirror 2 and the Al electrode 7, and the effective resonance of the resonator determined by the thickness of the SiN film 3 is formed. Superposition of waves propagating at wavelengths according to the length of the vessel occurs, and an increase in EL emission is observed when viewed at a unit angle and unit spectrum.
【0007】[0007]
【発明が解決しようとする課題】タングらの構造に類似
する有機薄膜EL素子は低電圧で高輝度の発光が得られ
る反面、電流駆動型の素子であるために、高輝度を得る
ためには電流密度を大きくしなければならない。電流密
度が大きくなるほど消費電力が大きくなり、且つ前述し
たように輝度の低下速度が著しくなる。このような現象
の原因としては、注入された電子と正孔が有効に発光に
結びつかないこと、すなわちELの量子効率が小さいこ
との他に、有機薄膜内で発生、放射される光を有効に外
部に取り出していないこと、すなわち光の取り出し効率
が低いことが考えられる。そこで、光の取り出し効率を
上げ、効率を現状の1.5倍以上向上させることが有機
薄膜EL素子の実用上の課題である。An organic thin film EL element similar to the structure of Tung et al. Can obtain high-luminance light emission at a low voltage, but on the other hand, since it is a current-driven element, it is necessary to obtain high luminance. The current density must be increased. As the current density increases, the power consumption increases, and as described above, the rate of decrease in brightness becomes remarkable. The cause of such a phenomenon is that the injected electrons and holes do not effectively lead to light emission, that is, the quantum efficiency of EL is small, and the light generated and emitted in the organic thin film is effectively used. It is considered that the light is not extracted to the outside, that is, the light extraction efficiency is low. Therefore, it is a practical problem of the organic thin film EL element to increase the light extraction efficiency and improve the efficiency by 1.5 times or more as compared with the current situation.
【0008】光の取り出し効率が低い原因としては、次
のようなことが挙げられる。基板としてフラット基板を
用いた場合、等方発光源である有機薄膜層からの光は光
取り出し側の基板や透明電極表面への入射角が臨界角を
越えると全反射されるため、外部に取り出すことができ
ない。そのため、光の取り出し効率はおおよそ25%に
留まってしまい、このことは自発光型の発光素子におい
ては原理的な問題である。The causes of the low light extraction efficiency are as follows. When a flat substrate is used as the substrate, the light from the organic thin film layer, which is the isotropic emission source, is totally reflected when the incident angle to the substrate on the light extraction side or the transparent electrode surface exceeds the critical angle, so it is extracted to the outside. I can't. Therefore, the light extraction efficiency is limited to about 25%, which is a theoretical problem in a self-luminous light emitting element.
【0009】この問題を回避する方法の一例に共振器構
造の導入が挙げられる。共振器の導入により出射光に指
向性を持たせることが可能であり、有機薄膜からの発光
を有効にガラス基板外部に取り出すことができる。例え
ば、高田らは、アプライド・フィジックス・レターズ
(Applied Physics Letter
s)、63巻、2032ページ、1993年、におい
て、ガラス基板上にITO陽極、TAD正孔輸送層、ナ
フソスチリルアミン(NSD)発光層、オキサジアノー
ル誘導体(OXD)電子輸送層、MgAg陰極をそれぞ
れ積層した構造の共振器型有機薄膜EL素子を用いた実
験で、出射光の広がり角が半角でおよそ30°となった
ことを報告している。前述したガラス−空気界面での可
視光の全反射臨界角はおよそ40°であるので、有機薄
膜からの発光を有効に基板外部に取り出すことができて
いることになる。An example of a method for avoiding this problem is the introduction of a resonator structure. The introduction of the resonator allows the emitted light to have directivity, and the light emitted from the organic thin film can be effectively extracted to the outside of the glass substrate. For example, Takada et al. Applied Physics Letters (Applied Physics Letter)
s), Vol. 63, p. 2032, 1993, ITO anode, TAD hole transport layer, naphthostyrylamine (NSD) light emitting layer, oxadianol derivative (OXD) electron transport layer, MgAg cathode on a glass substrate. In an experiment using a resonator type organic thin film EL element having a laminated structure, it is reported that the divergence angle of emitted light is about 30 ° in half angle. Since the critical angle of total reflection of visible light at the above-mentioned glass-air interface is about 40 °, it means that the light emission from the organic thin film can be effectively extracted to the outside of the substrate.
【0010】しかし、一方で、共振器型の有機薄膜EL
素子における出射光の指向性は、同時に視野角の縮小を
もたらす。すなわち、図6に示すように、従来の共振器
型有機薄膜EL素子においては出射光の指向性が高く、
半角でおよそ30°の範囲内に出射される。ガラス基板
−空気の可視光領域での全反射の臨界角は半角で約40
°なので、共振器型有機薄膜発光層からの発光は基板−
空気界面で全反射されることなく有効に基板外部に取り
出すことができることになる。しかし、同時にこのよう
な構造の有機薄膜EL素子においては視野角も半角で3
0°ということになってしまい、例えばディスプレイ等
への応用を考えると十分ではない。このことから、共振
器型有機薄膜EL素子においては、高い光取り出し効率
を維持したまま視野角を拡大することが課題である。On the other hand, however, the resonator type organic thin film EL
The directivity of the emitted light in the device simultaneously reduces the viewing angle. That is, as shown in FIG. 6, in the conventional resonator type organic thin film EL element, the directivity of emitted light is high,
The light is emitted within a range of about 30 ° in half angle. Glass substrate-The critical angle of total reflection in the visible light range of air is about 40
Therefore, the light emitted from the resonator type organic thin film light emitting layer is
It can be effectively taken out of the substrate without being totally reflected at the air interface. However, at the same time, in the organic thin film EL element having such a structure, the viewing angle is 3
This is 0 °, which is not sufficient when considering application to, for example, a display. From this, in the resonator type organic thin film EL element, it is a problem to widen the viewing angle while maintaining high light extraction efficiency.
【0011】[0011]
【課題を解決するための手段】本発明によれば、透明部
材による基板上に凹部を形成し、この凹部に、共振器構
造の発光部を形成したことを特徴とする共振器型有機薄
膜EL素子が得られる。According to the present invention, a concave portion is formed on a substrate made of a transparent member, and a light emitting portion of a resonator structure is formed in the concave portion. The device is obtained.
【0012】本発明によればまた、透明部材による基板
の一面側に共振器構造の発光部を形成した共振器型有機
薄膜EL素子において、前記基板の他面側における光取
り出し部に光屈折部を形成したことを特徴とする共振器
型有機薄膜EL素子が得られる。Further, according to the present invention, in a resonator type organic thin film EL element in which a light emitting part having a resonator structure is formed on one surface side of a substrate by a transparent member, a light refracting part is provided on a light extraction part on the other surface side of the substrate. A resonator type organic thin film EL element characterized by being formed is obtained.
【0013】なお、前記光屈折部は、高屈折率イオンを
含む基板にパターニングを施し、低屈折率イオン溶融塩
中に浸漬させることによる選択的イオン交換で形成され
ることが好ましい。The photorefractive part is preferably formed by selective ion exchange by patterning a substrate containing high refractive index ions and immersing the substrate in a low refractive index ion molten salt.
【0014】本発明によれば更に、透明部材による基板
の一面側に共振器構造の発光部を形成した共振器型有機
薄膜EL素子において、前記基板の他面側に光拡散部を
形成したことを特徴とする共振器型有機薄膜EL素子が
得られる。According to the present invention, further, in the resonator type organic thin film EL element in which the light emitting portion of the resonator structure is formed on one surface side of the substrate by the transparent member, the light diffusion portion is formed on the other surface side of the substrate. A resonator type organic thin film EL element having the following features is obtained.
【0015】なお、前記光拡散部は、前記基板の他面に
素子の波長オーダーの表面粗さを与えることにより形成
されることが好ましい。The light diffusing section is preferably formed by providing the other surface of the substrate with a surface roughness of the order of wavelength of the device.
【0016】[0016]
【発明の実施の形態】図1は本発明の第一の実施の形態
である湾曲構造を有する共振器型有機薄膜EL素子を示
す概念図である。この第一の実施の形態においては、ガ
ラス基板1上に凹部を形成すると共に、この凹部側全域
に誘電体多層膜からなる半透明反射鏡である多層膜反射
鏡2及びSiN膜3を形成し、その上にITO電極4
(陽極)を形成する。更に、凹部にはTAD正孔輸送層
5、Alq発光層6、Al電極7(陰極)を形成するこ
とにより、発光部を凹面構造としていることを特徴とし
ている。ガラス基板1の凹部は、ガラス基板1を射出成
型やプレス成型で形成したり、ガラス基板1に対してエ
ッチング等の処理を施すことにより得られる。1 is a conceptual diagram showing a resonator type organic thin film EL element having a curved structure which is a first embodiment of the present invention. In the first embodiment, a concave portion is formed on the glass substrate 1, and a multilayer film reflecting mirror 2 and a SiN film 3 which are semitransparent reflecting mirrors made of a dielectric multilayer film are formed on the entire concave portion side. , ITO electrode 4 on it
(Anode) is formed. Furthermore, the TAD hole transport layer 5, the Alq light emitting layer 6, and the Al electrode 7 (cathode) are formed in the concave portion, so that the light emitting portion has a concave structure. The concave portion of the glass substrate 1 is obtained by forming the glass substrate 1 by injection molding or press molding, or by subjecting the glass substrate 1 to a treatment such as etching.
【0017】このような層構造を有する有機薄膜EL素
子においては、多層膜反射鏡2及びAl電極7により共
振器が構成されることになり、SiN膜3の厚さで決ま
る共振器の実公共振器長に応じた波長で伝播する波動の
重ね合わせが生じ、単位角度、単位スペクトルでみた場
合にEL発光の増大が観測されることになる。In the organic thin film EL device having such a layer structure, the resonator is constituted by the multilayer-film reflective mirror 2 and the Al electrode 7, and the resonator is determined by the thickness of the SiN film 3. Superposition of waves propagating at wavelengths according to the shaker length occurs, and an increase in EL emission is observed when viewed at a unit angle and a unit spectrum.
【0018】図4(a)に第一の実施の形態の光路の概
略図を示す。この図4(a)から明らかなように、本発
明の第一の実施の形態においては、発光部が凹面をなし
ているため、単位面積からの発光の広がりは30°であ
っても、全体として全反射臨界角である40°まで拡大
することができる。このような凹面構造によれば、凹部
の曲率半径や発光層の面積等の最適化により所望の出射
光広がりを与えることができる。FIG. 4 (a) shows a schematic view of the optical path of the first embodiment. As is apparent from FIG. 4A, in the first embodiment of the present invention, since the light emitting portion has a concave surface, even if the spread of light emission from the unit area is 30 °, As a result, the total reflection critical angle can be expanded to 40 °. With such a concave surface structure, a desired outgoing light spread can be provided by optimizing the radius of curvature of the concave portion and the area of the light emitting layer.
【0019】図2は本発明の第二の実施の形態である光
屈折部を有する共振器型有機薄膜EL素子を表す概念図
である。この第二の実施の形態においては、従来の共振
器型有機薄膜EL素子の構造に加えて、ガラス基板1の
光取り出し側に低屈折率イオン拡散部9による光屈折部
を有していることを特徴としている。このような光屈折
部としては、高屈折率イオンを含む平板基板ガラスにパ
ターニングを施し、低屈折率イオン溶融塩中に浸漬させ
ることによる選択的イオン交換で形成する埋め込み型3
次元分布屈折率レンズ等があるがこの限りではない。FIG. 2 is a conceptual view showing a resonator type organic thin film EL element having a photorefractive portion which is a second embodiment of the present invention. In the second embodiment, in addition to the structure of the conventional resonator-type organic thin film EL element, the glass substrate 1 has a light refraction portion by the low refractive index ion diffusion portion 9 on the light extraction side. Is characterized by. Such a light refraction part is formed by a selective ion exchange by patterning a flat substrate glass containing high refractive index ions and immersing it in a low refractive index ion molten salt.
There is a dimensional distribution refractive index lens or the like, but the present invention is not limited thereto.
【0020】図4(b)にこの第二の実施の形態の光路
の概略図を示す。この場合は有機薄膜発光層からの発光
は30°の広がりしか持たないが、低屈折率イオン拡散
部9によって光が屈折し、ガラス基板1外部で広がる例
である。この場合も出射光が基板−空気界面で全反射さ
れることがないので高い光取り出し効率を実現すること
ができる。また、低屈折率イオンの分布により、やはり
所望の出射光広がりを得ることができる。FIG. 4 (b) shows a schematic view of the optical path of the second embodiment. In this case, the light emitted from the organic thin film light emitting layer has a spread of only 30 °, but this is an example in which the light is refracted by the low refractive index ion diffusion portion 9 and spread outside the glass substrate 1. Also in this case, the emitted light is not totally reflected at the substrate-air interface, so that high light extraction efficiency can be realized. In addition, the desired distribution of emitted light can be obtained by the distribution of low refractive index ions.
【0021】図3は本発明の第三の実施の形態である光
拡散部を有する共振器型有機薄膜EL素子を表す概念図
である。この第三の実施の形態においては、従来の共振
器型有機薄膜EL素子の構造に加えて、ガラス基板1の
光取り出し側に光拡散部10を形成したことを特徴とし
ている。この種の光拡散部10は、ガラス基板1の表面
に波長オーダーの表面粗さを与えることにより形成する
ことができる。FIG. 3 is a conceptual diagram showing a resonator type organic thin film EL element having a light diffusing portion which is a third embodiment of the present invention. The third embodiment is characterized in that a light diffusing section 10 is formed on the light extraction side of the glass substrate 1 in addition to the structure of the conventional resonator type organic thin film EL element. This kind of light diffusing section 10 can be formed by giving the surface of the glass substrate 1 a surface roughness of a wavelength order.
【0022】図4(c)に第三の実施の形態の光路の概
略図を示す。第二の実施の形態と同様に、この場合もガ
ラス基板1の裏面で出射光を広げる構造であるため、高
い光取り出し効率を実現することができる。また、この
場合は拡散を利用しているため視野角は半角で90°と
なることを特徴としている。FIG. 4 (c) shows a schematic view of the optical path of the third embodiment. Similar to the second embodiment, in this case as well, since the emitted light is spread on the back surface of the glass substrate 1, high light extraction efficiency can be realized. Further, in this case, since the diffusion is utilized, the viewing angle is 90 ° in half angle.
【0023】以上、本発明を好ましい3つの実施の形態
について説明したが、本発明に適用され得る有機薄膜E
L素子の有機薄膜層は特に限定されず、発光層だけの単
層構造のものや正孔輸送帯層、電子輸送帯層、陽極界面
層、陰極界面層などを有するもの等あらゆる薄膜構造が
適用可能である。また、発光層以外を形成する薄膜層と
しては、有機物質に限らず無機物質を用いた薄膜や有機
物質と金属の混合体などの薄膜であっても有効である。
また、有機薄膜層は、真空蒸着法、分子線蒸着法(MB
E法)あるいは溶媒に溶かした溶液のディッピング法、
スピンコーティング法、キャスティング法、バーコート
法、ロールコート法等の塗布法による公知の方法で形成
することができる。Although the present invention has been described above with reference to three preferred embodiments, the organic thin film E applicable to the present invention is described.
The organic thin film layer of the L element is not particularly limited, and any thin film structure such as a single layer structure having only a light emitting layer, a hole transport band layer, an electron transport band layer, an anode interface layer, a cathode interface layer, or the like is applied. It is possible. Further, the thin film layer other than the light emitting layer is not limited to an organic substance, but is effective even if it is a thin film using an inorganic substance or a thin film of a mixture of an organic substance and a metal.
In addition, the organic thin film layer is formed by vacuum vapor deposition or molecular beam vapor deposition (MB
E method) or a dipping method of a solution dissolved in a solvent,
It can be formed by a known method such as a spin coating method, a casting method, a bar coating method, or a roll coating method.
【0024】本発明における正孔輸送帯層の材料として
は、特に限定されないが、例えばトリフェニルジアミン
誘導体、オキサジアゾール誘導体、ポルフィリン誘導
体、スチルベン誘導体、アリールアミン誘導体などを用
いることができる。更に、正孔輸送化合物を既知の高分
子を媒体として、これに分散した層として用いることも
できる。前記高分子としては、正孔輸送性を極度に阻害
しないものが望ましく、例えば、ポリ−(N−ビニルカ
ルバゾール)、ポリカーボネート、ポリメチルアクリレ
ート、ポリメチルメタクリレート、ポリスチレン系重合
体、ポリシリレン系重合体、ポリチオフェン、ポリアニ
リン、ポリフェニレンビニレンなどが適用できる。The material of the hole transporting zone layer in the present invention is not particularly limited, but for example, a triphenyldiamine derivative, an oxadiazole derivative, a porphyrin derivative, a stilbene derivative, an arylamine derivative and the like can be used. Further, the hole transport compound can be used as a layer in which a known polymer is used as a medium and dispersed therein. The polymer is preferably one that does not extremely hinder the hole transporting property, and examples thereof include poly- (N-vinylcarbazole), polycarbonate, polymethyl acrylate, polymethyl methacrylate, polystyrene-based polymer, polysilylene-based polymer, Polythiophene, polyaniline, polyphenylene vinylene, etc. can be applied.
【0025】陽極界面層は安定な正孔注入を達成すべく
導入するものであるが、有機薄膜層と陽極の密着性を保
持する役目を担う必要がある。不必要に膜厚を大きくす
ることは、発光の駆動電圧を大きくしたり、薄膜表面に
不均一発光を招く凹凸をもたらす可能性があり、前記陽
極界面層は30nm以下の膜厚が望ましい。本発明にお
いて適用できる陽極界面層は例えば“色素ハンドブッ
ク:講談社 '86年”に記載されているスピロ化合物、
アゾ化合物、キノン化合物、インジゴ化合物、ジフェニ
ルメタン化合物、キナクリドン化合物、ポリメチン化合
物、アクリジン化合物、ポルフィリン化合物等の縮合多
環系の色素が適用できる。また、芳香族アミン等の“オ
ーガニック セミコンダクターズ:フェルラック ケミ
エ社 (ORGANIC SEMICONDUCTOR
S:VERLAG CHEMIE)´74年”に記載さ
れている低分子有機P型半導体も適用できる。The anode interface layer is introduced in order to achieve stable hole injection, but it must play a role of maintaining the adhesiveness between the organic thin film layer and the anode. Unnecessarily increasing the film thickness may increase the driving voltage for light emission and may cause unevenness on the surface of the thin film, which causes uneven light emission. The film thickness of the anode interface layer is preferably 30 nm or less. The anode interface layer applicable in the present invention is, for example, a spiro compound described in "Dye Handbook: Kodansha '86",
Fused polycyclic dyes such as azo compounds, quinone compounds, indigo compounds, diphenylmethane compounds, quinacridone compounds, polymethine compounds, acridine compounds and porphyrin compounds can be applied. In addition, "organic semiconductors such as aromatic amines: Ferlac Chemie (ORGANIC SEMICONDUCTOR
S: VERLAG CHEMIE) '74 ”is also applicable.
【0026】有機薄膜EL素子の発光層材料は特に限定
されず、公知の発光材料を適用できる。例えば、8−ヒ
ドロキシキノリノール及びその誘導体の金属錯体、テト
ラフェニルブタジエン誘導体、ジスチリルアリール誘導
体、クマリン系誘導体、キナクリドン誘導体、ペリレン
系誘導体、ポリメチン系誘導体、アントラセン誘導体、
ポリビニルカルバゾールなどが挙げられる。発光層は単
一成分でも他の発光材料をドーピングする系でも良い。The light emitting layer material of the organic thin film EL element is not particularly limited, and known light emitting materials can be applied. For example, metal complexes of 8-hydroxyquinolinol and its derivatives, tetraphenylbutadiene derivatives, distyrylaryl derivatives, coumarin derivatives, quinacridone derivatives, perylene derivatives, polymethine derivatives, anthracene derivatives,
Examples thereof include polyvinylcarbazole. The light emitting layer may be a single component or a system doped with another light emitting material.
【0027】本発明においては必要に応じて電子輸送帯
を発光層と陰極の間に設けても良い。電子輸送材料は特
に限定されるものではないが、8−ヒドロキシキノリノ
ール及びその誘導体、オキサジアゾール誘導体、ジフェ
ニルキノン誘導体などの適用が可能である。In the present invention, an electron transport band may be provided between the light emitting layer and the cathode, if necessary. The electron transport material is not particularly limited, but 8-hydroxyquinolinol and its derivatives, oxadiazole derivatives, diphenylquinone derivatives and the like can be applied.
【0028】有機薄膜EL素子の陽極は、正孔を正孔輸
送帯層に注入する役割を担うものであり、4.5eV以
上の仕事関係を有することが効果的である。陽極材料の
具体例としては、酸化インジウム錫合金(ITO)、酸
化錫(NESA)、金、銀、白金、銅等が適用できる。
陰極としては、電子輸送帯又は発光層に電子を注入する
目的で、仕事関係の小さい材料が好ましく、特に限定さ
れないが、具体的にはインジウム、アルミニウム、マグ
ネシウム、マグネシウム−インジウム合金、マグネシウ
ム−アルミニウム合金、アルミニウム−リチウム合金、
アルミニウム−スカンジウム合金等を主成分とする金属
が使用できる。なお、素子を酸素や湿気から守る目的
で、金属酸化物、金属硫化物、金属沸化物、有機化合物
から成る公知の封止材料等から形成される封止層を設け
ることも有効である。The anode of the organic thin film EL element plays a role of injecting holes into the hole transport zone layer, and it is effective that it has a work relationship of 4.5 eV or more. Specific examples of the anode material include indium tin oxide alloy (ITO), tin oxide (NESA), gold, silver, platinum, and copper.
The cathode is preferably a material having a small work relationship for the purpose of injecting electrons into the electron transport band or the light emitting layer, and is not particularly limited, but specifically, indium, aluminum, magnesium, magnesium-indium alloy, magnesium-aluminum alloy. , Aluminum-lithium alloy,
A metal containing aluminum-scandium alloy or the like as a main component can be used. In order to protect the device from oxygen and moisture, it is also effective to provide a sealing layer formed of a known sealing material such as a metal oxide, a metal sulfide, a metal fluoride or an organic compound.
【0029】[0029]
【発明の効果】以上、複数の実施の形態をあげて説明し
たように、本発明における共振器型有機薄膜EL素子に
おいては、きわめて簡単な構造で、共振器型有機薄膜E
L素子の特徴である高い光取り出し効率を維持した上
で、同時に視野角の拡大を図ることができる。従って、
マトリクス型の有機薄膜ELディスプレイ等の発光装置
への適用にも適しており、低消費電力の高精細デバイス
の作成が可能となる。As described above with reference to a plurality of embodiments, in the resonator type organic thin film EL element of the present invention, the resonator type organic thin film E has a very simple structure.
While maintaining the high light extraction efficiency, which is a characteristic of the L element, it is possible to simultaneously increase the viewing angle. Therefore,
It is also suitable for application to a light emitting device such as a matrix type organic thin film EL display, and enables the production of a high-definition device with low power consumption.
【図1】本発明の第一の実施の形態である湾曲構造を有
する共振器型有機EL素子を示す概念図である。FIG. 1 is a conceptual diagram showing a resonator type organic EL element having a curved structure which is a first embodiment of the present invention.
【図2】本発明の第二の実施の形態である光屈折部位を
有する共振器型有機EL素子を示す概念図である。FIG. 2 is a conceptual diagram showing a resonator type organic EL element having a photorefractive portion which is a second embodiment of the present invention.
【図3】本発明の第三の実施の形態である光拡散部位を
有する共振器型有機EL素子を示す概念図である。FIG. 3 is a conceptual diagram showing a resonator type organic EL element having a light diffusing portion, which is a third embodiment of the present invention.
【図4】本発明の第一〜第三の実施の形態の共振器型有
機EL素子の光路を示す概念図である。FIG. 4 is a conceptual diagram showing an optical path of a resonator type organic EL element according to first to third embodiments of the present invention.
【図5】従来の共振器型有機薄膜EL素子を表す概念図
である。FIG. 5 is a conceptual diagram showing a conventional resonator type organic thin film EL element.
【図6】従来の共振器型有機EL素子の光路を示す概念
図である。FIG. 6 is a conceptual diagram showing an optical path of a conventional resonator type organic EL element.
1 ガラス基板 2 多層膜反射鏡 3 SiN膜 4 ITO電極 5 TAD正孔輸送層 6 Alq発光層 7 Al電極 8 電源 9 低屈折率イオン拡散部 10 光拡散部 1 Glass Substrate 2 Multilayer Reflector 3 SiN Film 4 ITO Electrode 5 TAD Hole Transport Layer 6 Alq Light Emitting Layer 7 Al Electrode 8 Power Supply 9 Low Refractive Index Ion Diffuser 10 Light Diffuser
Claims (5)
この凹部に、共振器構造の発光部を形成したことを特徴
とする共振器型有機薄膜EL素子。1. A recess is formed on a substrate made of a transparent member,
A resonator-type organic thin film EL element characterized in that a light emitting portion having a resonator structure is formed in this recess.
造の発光部を形成した共振器型有機薄膜EL素子におい
て、前記基板の他面側における光取り出し部に光屈折部
を形成したことを特徴とする共振器型有機薄膜EL素
子。2. In a resonator type organic thin film EL element in which a light emitting part of a resonator structure is formed on one surface side of a substrate by a transparent member, a light refraction part is formed on a light extraction part on the other surface side of the substrate. Characteristic resonator type organic thin film EL element.
子において、前記光屈折部は、高屈折率イオンを含む基
板にパターニングを施し、低屈折率イオン溶融塩中に浸
漬させることによる選択的イオン交換で形成されること
を特徴とする共振器型有機薄膜EL素子。3. The resonator type organic thin film EL element according to claim 2, wherein the photorefractive part is selected by patterning a substrate containing high refractive index ions and immersing it in a low refractive index ion molten salt. Resonator type organic thin film EL device characterized by being formed by selective ion exchange.
造の発光部を形成した共振器型有機薄膜EL素子におい
て、前記基板の他面側に光拡散部を形成したことを特徴
とする共振器型有機薄膜EL素子。4. A resonator-type organic thin film EL device in which a light emitting portion having a resonator structure is formed on one surface side of a substrate made of a transparent member, wherein a light diffusion portion is formed on the other surface side of the substrate. Organic thin film EL device.
子において、前記光拡散部は、前記基板の他面に素子の
波長オーダーの表面粗さを与えることにより形成される
ことを特徴とする共振器型有機薄膜EL素子。5. The resonator type organic thin film EL element according to claim 4, wherein the light diffusing portion is formed by providing the other surface of the substrate with a surface roughness in the order of wavelength of the element. Resonator type organic thin film EL device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7354362A JP2692671B2 (en) | 1995-12-29 | 1995-12-29 | Resonator type organic thin film EL device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7354362A JP2692671B2 (en) | 1995-12-29 | 1995-12-29 | Resonator type organic thin film EL device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09190883A JPH09190883A (en) | 1997-07-22 |
JP2692671B2 true JP2692671B2 (en) | 1997-12-17 |
Family
ID=18437049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7354362A Expired - Lifetime JP2692671B2 (en) | 1995-12-29 | 1995-12-29 | Resonator type organic thin film EL device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2692671B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6787976B2 (en) | 2000-10-18 | 2004-09-07 | Sharp Kabushiki Kaisha | Luminous display element including an optical member for reflecting light in a direction opposite to an incident direction |
KR100462858B1 (en) * | 2001-03-01 | 2004-12-17 | 삼성에스디아이 주식회사 | Organic light-emitting device |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002198167A (en) * | 2000-12-25 | 2002-07-12 | Seiko Epson Corp | Illumination device and manufacturing method thereof, display device, and electronic device |
JP4009817B2 (en) | 2001-10-24 | 2007-11-21 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
JP2004327634A (en) | 2003-04-23 | 2004-11-18 | Semiconductor Energy Lab Co Ltd | Laser oscillator |
JP4731861B2 (en) * | 2003-09-12 | 2011-07-27 | 株式会社半導体エネルギー研究所 | Laser oscillator manufacturing method |
US7502392B2 (en) | 2003-09-12 | 2009-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Laser oscillator |
US7449724B2 (en) * | 2003-09-12 | 2008-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP4831950B2 (en) * | 2003-09-12 | 2011-12-07 | 株式会社半導体エネルギー研究所 | Light emitting device, laser pointer |
JP4954457B2 (en) * | 2003-09-26 | 2012-06-13 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
TWI315162B (en) * | 2003-12-08 | 2009-09-21 | Chi Mei Optoelectronics Corporatio | Organic electroluminescent device |
US7903055B2 (en) | 2004-04-30 | 2011-03-08 | Sanyo Electric Co., Ltd. | Light-emitting display |
KR100776907B1 (en) * | 2004-04-30 | 2007-11-19 | 산요덴키가부시키가이샤 | Luminous display |
WO2007004106A1 (en) * | 2005-06-30 | 2007-01-11 | Koninklijke Philips Electronics N.V. | Light-emitting device |
JP4645587B2 (en) | 2006-02-03 | 2011-03-09 | ソニー株式会社 | Display element and display device |
JP2008084638A (en) * | 2006-09-27 | 2008-04-10 | Furukawa Electric Co Ltd:The | Light emitter |
JP4450051B2 (en) * | 2007-11-13 | 2010-04-14 | ソニー株式会社 | Display device |
US8735875B2 (en) | 2009-07-21 | 2014-05-27 | Showa Denko K.K. | Light emitting element, method for manufacturing light emitting element, image display device, and illuminating device |
JP5053412B2 (en) * | 2010-05-10 | 2012-10-17 | 古河電気工業株式会社 | Glass substrate and organic electroluminescence device |
WO2018011902A1 (en) | 2016-07-12 | 2018-01-18 | パイオニア株式会社 | Light-emitting system and moving body |
WO2018012335A1 (en) | 2016-07-12 | 2018-01-18 | パイオニア株式会社 | Light-emitting device |
WO2018011903A1 (en) | 2016-07-12 | 2018-01-18 | パイオニア株式会社 | Light-emitting system |
-
1995
- 1995-12-29 JP JP7354362A patent/JP2692671B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6787976B2 (en) | 2000-10-18 | 2004-09-07 | Sharp Kabushiki Kaisha | Luminous display element including an optical member for reflecting light in a direction opposite to an incident direction |
US6898018B2 (en) | 2000-10-18 | 2005-05-24 | Sharp Kabushiki Kaisha | Luminous display element |
KR100462858B1 (en) * | 2001-03-01 | 2004-12-17 | 삼성에스디아이 주식회사 | Organic light-emitting device |
Also Published As
Publication number | Publication date |
---|---|
JPH09190883A (en) | 1997-07-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2692671B2 (en) | Resonator type organic thin film EL device | |
US7342246B2 (en) | Light-emitting element and display device and lighting device using same | |
US6396208B1 (en) | Organic electroluminescent device and its manufacturing process | |
JP6290996B2 (en) | Lighting device | |
JP2991183B2 (en) | Organic electroluminescence device | |
JP3852509B2 (en) | Electroluminescent device and manufacturing method thereof | |
US6806491B2 (en) | Organic light-emitting devices | |
JP4263415B2 (en) | ORGANIC LIGHT EMITTING ELEMENT AND DISPLAY DEVICE USING THE ELEMENT | |
US8026662B2 (en) | Organic light-emitting element, image display device and production method thereof | |
US7737630B2 (en) | Electroluminescence element and a light emitting device using the same | |
JP4302914B2 (en) | LIGHT EMITTING ELEMENT AND DISPLAY DEVICE | |
US8390549B2 (en) | Organic luminescent display device | |
KR100435203B1 (en) | White light-emitting organic electroluminescent device for back light and liquid crystal display device using itself | |
JP2003115377A (en) | Light emitting device, method of manufacturing the same, and display device using the same | |
JP2001035660A (en) | Organic electroluminescence element | |
JP2947250B2 (en) | Organic electroluminescence device and method of manufacturing the same | |
JP2001217078A (en) | Organic light emitting device and method of manufacturing the same | |
JPH09171892A (en) | Organic thin film EL device | |
JP3967946B2 (en) | Organic electroluminescence device | |
JP2002299062A (en) | Organic electroluminescent device | |
JP4104339B2 (en) | LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE | |
JP4210872B2 (en) | Electroluminescent device and manufacturing method thereof | |
JP2006019251A (en) | Lighting system | |
KR100542996B1 (en) | Transparent organic electroluminescent display | |
JP2004146121A (en) | Organic electroluminescent element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19970805 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080905 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080905 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090905 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090905 Year of fee payment: 12 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090905 Year of fee payment: 12 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090905 Year of fee payment: 12 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090905 Year of fee payment: 12 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100905 Year of fee payment: 13 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100905 Year of fee payment: 13 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110905 Year of fee payment: 14 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120905 Year of fee payment: 15 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130905 Year of fee payment: 16 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130905 Year of fee payment: 16 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130905 Year of fee payment: 16 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |