JP2692644B2 - Fullerene thin film manufacturing method - Google Patents
Fullerene thin film manufacturing methodInfo
- Publication number
- JP2692644B2 JP2692644B2 JP7101978A JP10197895A JP2692644B2 JP 2692644 B2 JP2692644 B2 JP 2692644B2 JP 7101978 A JP7101978 A JP 7101978A JP 10197895 A JP10197895 A JP 10197895A JP 2692644 B2 JP2692644 B2 JP 2692644B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- fullerene
- substrate
- photopolymerization
- fullerene thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 74
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 title claims description 53
- 229910003472 fullerene Inorganic materials 0.000 title claims description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 13
- 239000002052 molecular layer Substances 0.000 claims description 9
- 230000000379 polymerizing effect Effects 0.000 claims 2
- 239000010408 film Substances 0.000 description 20
- 238000000151 deposition Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000003795 desorption Methods 0.000 description 5
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Carbon And Carbon Compounds (AREA)
- Physical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、炭素原子が籠状に結合
したフラーレンの薄膜製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a fullerene thin film having carbon atoms bonded in a cage shape.
【０００２】[0002]
【従来の技術】１９９０年にクレッチマー等（Ｎａｔｕ
ｒｅ，３４７，３５４（１９９０））によって大量合成
法が発見されたＣ60やＣ70などのフラーレンは、その
後、ハドン等（Ｎａｔｕｒｅ，３５０，３２０（１９９
１））によってＣ60結晶中のＣ60分子間にアルカリ金属
やアルカリ土類金属を導入する事により超伝導などの物
性を示す事が発見された。これは分子超伝導体としては
非常に高い超伝導転移温度を有し、デバイスなどへの応
用が期待される。それに伴いフラーレンの薄膜化が重要
視され、各種薄膜製造法により、フラーレンの薄膜化の
研究が進められている。2. Description of the Related Art Kletschmer et al.
Re, 347, 354 (1990)), fullerene such as C 60 and C 70 for which a large-scale synthesis method was discovered was later described by Haddon et al. (Nature, 350, 320 (199)).
It was discovered by 1)) that by introducing an alkali metal or an alkaline earth metal between C 60 molecules in a C 60 crystal, physical properties such as superconductivity are exhibited. It has a very high superconducting transition temperature as a molecular superconductor and is expected to be applied to devices and the like. Along with this, it is important to reduce the thickness of fullerenes, and researches for reducing the thickness of fullerenes are being conducted by various thin film manufacturing methods.
【０００３】[0003]
【発明が解決しようとする課題】これまでのフラーレン
の薄膜製造法には有機分子線蒸着法、真空蒸着法、Ｌａ
ｎｇｍｕｉｒｅ−Ｂｒｏｄｇｅｔｔ法などの薄膜製造法
が用いられていた。しかし、これらの方法によって作ら
れた薄膜は、Ｃ60などのフラーレンがファンデアワール
ス力という、物質の結合では非常に弱い力で結合してい
るために、基板からの再離脱やフラーレンが基板上で動
き回り構造が乱れるなどの問題があった。本発明は、こ
のような課題を解決し、フラーレン間の結合力を強め、
フラーレン類が基板から離脱したり基板上で動き回るこ
とのないように固定する事を目的としたものである。The conventional fullerene thin film manufacturing methods include organic molecular beam deposition, vacuum deposition, and La.
A thin film manufacturing method such as the ngmuire-Brodgett method has been used. However, in the thin films produced by these methods, fullerenes such as C 60 are bound by the van der Waals force, which is a very weak force in the binding of substances. There was a problem such as moving around and disturbing the structure. The present invention solves such problems, strengthens the bonding force between fullerenes,
The purpose is to fix fullerenes so that they do not separate from the substrate or move around on the substrate.
【０００４】[0004]
【課題を解決するための手段】本発明の特徴とするとこ
ろは、有機分子線蒸着法など従来の方法により、基板上
にＣ60やＣ70などのフラーレンの薄膜を形成し、形成さ
れたフラーレン薄膜に光エネルギーを与え、フラーレン
分子間に化学反応を起こし、フラーレン分子同志を重合
させることにある。The feature of the present invention resides in that a fullerene thin film such as C 60 or C 70 is formed on a substrate by a conventional method such as an organic molecular beam deposition method, and the formed fullerene is formed. Light energy is applied to the thin film to cause a chemical reaction between the fullerene molecules to polymerize the fullerene molecules.
【０００５】本発明の第１の発明は、基板上にフラーレ
ン薄膜を形成する工程と、前記フラーレン薄膜に光エネ
ルギーを与え、フラーレン薄膜中のフラーレンを重合す
る工程を有することを特徴とするフラーレン薄膜製造方
法である。A first invention of the present invention comprises a step of forming a fullerene thin film on a substrate and a step of applying light energy to the fullerene thin film to polymerize the fullerene in the fullerene thin film. It is a manufacturing method.
【０００６】第２の発明は、前記フラーレン薄膜形成工
程と前記光重合工程を交互に行うことを特徴とする第１
の発明に記載のフラーレン薄膜製造方法である。A second invention is characterized in that the fullerene thin film forming step and the photopolymerization step are alternately carried out.
The method for producing a fullerene thin film according to the invention.
【０００７】第３の発明は、基板上にｎ分子層（ｎは１
以上の整数）のフラーレン薄膜を形成した後に、前記フ
ラーレン薄膜に光エネルギーを与え、フラーレン薄膜中
のフラーレンを重合することを特徴とする第１の発明に
記載のフラーレン薄膜製造方法である。A third aspect of the present invention is an n-molecular layer (n is 1) on a substrate.
The fullerene thin film according to the first aspect of the present invention is characterized in that after the fullerene thin film having the above integer) is formed, light energy is applied to the fullerene thin film to polymerize the fullerene in the fullerene thin film.
【０００８】第４の発明は、前記光重合工程において、
薄膜成長基板を加熱することを特徴とする第１の発明ま
たは第２の発明または第３の発明に記載のフラーレン薄
膜製造方法である。A fourth invention is the photopolymerization step, wherein
The fullerene thin film manufacturing method according to the first invention, the second invention, or the third invention is characterized in that the thin film growth substrate is heated.
【０００９】[0009]
【作用】フラーレンは、炭素が籠状に結合し、炭素間の
一重結合と二重結合からなる。フラーレンに３００ｎｍ
程度の波長の光を照射すると光エネルギーによって二重
結合が一部切れ、フラーレン同士が結合（重合）する。
これにより、いくつものフラーレン間が網の目のように
なり、フラーレンが基板から離脱したり基板上で動き回
ることなく固定される。Function: Fullerenes are composed of carbon-like cage bonds, and are composed of single and double bonds between carbon atoms. 300nm for fullerene
When light of a certain wavelength is irradiated, some double bonds are broken by light energy, and fullerenes are bonded (polymerized) to each other.
As a result, a number of fullerenes become a mesh, and the fullerenes are fixed without separating from the substrate or moving around on the substrate.
【００１０】[0010]
【実施例】本発明の一実施例を図面を参照して以下に示
す。図１は本発明に使用する装置の一実施例である。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows an embodiment of the apparatus used in the present invention.
【００１１】（実施例１）２００℃に保持した二硫化モ
リブデン（００１）面基板２上に、４×１０-7Ｐａの真
空下で、蒸着セル１から１分子層（８オングストロー
ム）のＣ60を蒸着した後、シャッター３を閉じ、ビュー
イングポート４を透して紫外線ランプ５から３００ｎｍ
の波長の紫外線を１分間照射した。Ｃ60を１分子層蒸着
しては光を照射する作業を１００回繰り返して１００分
子層（８００オングストローム）のＣ60薄膜を作製し
た。(Example 1) On a molybdenum disulfide (001) plane substrate 2 kept at 200 ° C., under a vacuum of 4 × 10 -7 Pa, one molecule layer (8 angstroms) of C 60 was deposited from the deposition cell 1. After the vapor deposition, the shutter 3 is closed and the viewing port 4 is transmitted through the UV lamp 5 to 300 nm.
Ultraviolet rays having the wavelength of 1 minute were irradiated for 1 minute. The operation of vapor-depositing one molecular layer of C 60 and irradiating with light was repeated 100 times to form a C 60 thin film having 100 molecular layers (800 Å).
【００１２】作製されたＣ60重合薄膜と、光重合を行わ
ずに蒸着した従来のＣ60薄膜の膜厚を正確に測定した
後、薄膜を４×１０-7Ｐａ真空中でＣ60が蒸発する温度
である４００℃に加熱し、１２時間保持した後、膜厚を
測定したところ、光重合を行わずに蒸着した薄膜の膜厚
は３００オングストロームであったが、光重合工程を含
む薄膜の膜厚は６７０オングストロームであった。本発
明による光重合薄膜では、加熱によるＣ60分子の基板か
らの再離脱が非常に小さい事が確認された。After accurately measuring the film thickness of the prepared C 60 polymerized thin film and the conventional C 60 thin film deposited without photopolymerization, the C 60 was evaporated in a vacuum of 4 × 10 -7 Pa. After the temperature was raised to 400 ° C. and kept for 12 hours, the film thickness was measured and the film thickness of the thin film deposited without photopolymerization was 300 angstroms. The film thickness was 670 Å. It was confirmed that in the photopolymerized thin film according to the present invention, re-desorption of C 60 molecules from the substrate due to heating was very small.
【００１３】また、Ｃ60薄膜を接触原子間力顕微鏡（以
後ＡＦＭと記述する）で１０μｍ×１０μｍの領域を連
続観察したところ、光重合プロセスを用いず１００分子
層蒸着したＣ60薄膜では、僅か数回の走査で像が乱れて
くるのに対し、光重合プロセスを用いたＣ60薄膜では５
０回の走査を行っても像に変化が見られなかった。従来
のように光重合を行わずにフラーレンを蒸着し積層して
いくと、膜厚が厚くなるにつれ、結晶性が乱れアモルフ
ァス状態へと変化してゆくが、本発明によれば、フラー
レン同志が重合し、強固に結び付いているため、膜厚の
厚い部分でも、１層目と分子間隔にほとんど変化の無い
膜が得られることがわかる。なお、光重合を行う際に基
板温度を１５０℃程度で加熱しておくとより強固な膜が
得られた。Further, when the region of 10 [mu] m × 10 [mu] m was continuously observed with C 60 thin film contact atomic force microscope (hereinafter referred to as AFM), in C 60 films was deposited 100 molecular layers without using a photopolymerization process, just The image is disturbed by several scans, whereas it is 5 in the C 60 thin film using the photopolymerization process.
No change was observed in the image even when 0 scans were performed. When fullerene is vapor-deposited and laminated without performing photopolymerization as in the conventional case, as the film thickness increases, the crystallinity becomes disordered and the state changes to an amorphous state. It can be seen that, since they are polymerized and tightly bound to each other, a film having almost no change in the molecular spacing from the first layer can be obtained even in a thick film portion. A stronger film was obtained by heating the substrate at a temperature of about 150 ° C. during the photopolymerization.
【００１４】（実施例２）１００℃に保持した石英ガラ
ス基板２上に、４×１０-7Ｐａの真空下で蒸着セル１か
ら１分子層（８オングストローム）のＣ60を蒸着した
後、シャッター３を閉じ、ビューイングポート４を透し
て紫外線ランプ５から３００ｎｍの波長の紫外線を１分
間照射した。Ｃ60を１分子層蒸着しては光を照射する作
業を１００回繰り返し、１００分子層（８００オングス
トローム）のＣ60薄膜を作製した。作製されたＣ60重合
薄膜と光重合を行わずに蒸着したＣ60薄膜の膜厚を正確
に測定した後、薄膜を４×１０-7Ｐａ真空中でＣ60が蒸
発する温度である４００℃に加熱し、１２時間保持した
後、膜厚を測定したところ、光重合を行わずに蒸着した
薄膜の膜厚は４３０オングストロームであったが、光重
合工程を含む薄膜の膜厚は７２０オングストロームであ
り、光重合薄膜では加熱によるＣ60分子の基板からの再
離脱が非常に小さい事が確認された。また、Ｃ60薄膜を
接触型ＡＦＭで１０μｍ×１０μｍの領域を連続観察し
たところ、光重合プロセスを用いず１００分子層蒸着し
たＣ60薄膜では、僅か数回の走査で像が乱れてくるのに
対し、光重合プロセスを用いたＣ60薄膜では５０回の走
査を行っても像に変化が見られなかった。これらの事か
らＣ60薄膜中のＣ60同士が強固に結び付いている事が分
かった。なお、光重合を行う際に基板温度を１５０℃程
度で加熱しておくとより強固な膜が得られた。(Embodiment 2) One molecule layer (8 angstrom) of C 60 was vapor-deposited from the vapor deposition cell 1 on the quartz glass substrate 2 kept at 100 ° C. under a vacuum of 4 × 10 −7 Pa, and then the shutter was released. 3 was closed, and an ultraviolet ray having a wavelength of 300 nm was irradiated from the ultraviolet ray lamp 5 through the viewing port 4 for 1 minute. The operation of depositing one molecular layer of C 60 and then irradiating with light was repeated 100 times to prepare a C 60 thin film having 100 molecular layers (800 angstrom). After accurately measuring the film thickness of the prepared C 60 polymerized thin film and the C 60 thin film deposited without photopolymerization, the temperature of the thin film is 400 ° C., which is the temperature at which C 60 is evaporated in a vacuum of 4 × 10 −7 Pa. After heating for 12 hours and holding for 12 hours, the thickness of the thin film deposited without photopolymerization was 430 Å, but the thickness of the thin film including the photopolymerization step was 720 Å. However, it was confirmed that in the photopolymerized thin film, re-desorption of C 60 molecules from the substrate due to heating was very small. In addition, when a 10 μm × 10 μm region of the C 60 thin film was continuously observed by a contact type AFM, an image was distorted after only a few scans with the C 60 thin film deposited by 100 molecular layers without using a photopolymerization process. On the other hand, no change was observed in the image of the C 60 thin film using the photopolymerization process even after 50 scans. From these facts, it was found that the C 60 's in the C 60 thin film were tightly bound to each other. A stronger film was obtained by heating the substrate at a temperature of about 150 ° C. during the photopolymerization.
【００１５】（実施例３）２００℃に保持したグラファ
イト（００１）面基板２上に、４×１０-7Ｐａの真空下
で蒸着セル１から１分子層（８オングストローム）のＣ
60を蒸着した後、シャッター３を閉じ、ビューイングポ
ート４を透して紫外線ランプ５から３００ｎｍの波長の
紫外線を１分間照射した。Ｃ60を１分子層蒸着しては光
を照射する作業を１００回繰り返して１００分子層（８
００オングストローム）のＣ60薄膜を作製した。作製さ
れたＣ60重合薄膜と光重合を行わずに蒸着したＣ60薄膜
の膜厚を正確に測定した後、薄膜を４×１０-7Ｐａ真空
中でＣ60が蒸発する温度である４００℃に加熱し、１２
時間保持した後、膜厚を測定したところ、光重合を行わ
ずに蒸着した薄膜の膜厚は３００オングストロームであ
ったが、光重合工程を含む薄膜の膜厚は６７０オングス
トロームであり、光重合薄膜は加熱によるＣ60分子の基
板からの再離脱が非常に小さい事が確認された。また、
Ｃ60薄膜を接触型ＡＦＭで１０μｍ×１０μｍの領域を
連続観察したところ、光重合プロセスを用いず１００分
子層蒸着したＣ60薄膜では、僅か数回の走査で像が乱れ
てくるのに対し、光重合プロセスを用いたＣ60薄膜では
５０回の走査を行っても像に変化が見られなかった。こ
れらの事からＣ60薄膜中のＣ60同士が強固に結び付いて
いる事が分かった。なお、光重合を行う際に基板温度を
１５０℃程度で加熱しておくとより強固な膜が得られ
た。(Example 3) On a graphite (001) plane substrate 2 kept at 200 ° C., one molecule layer (8 angstrom) of C was deposited from a deposition cell 1 under a vacuum of 4 × 10 -7 Pa.
After depositing 60 , the shutter 3 was closed, and the ultraviolet ray having a wavelength of 300 nm was irradiated from the ultraviolet lamp 5 through the viewing port 4 for 1 minute. The process of vapor-depositing one molecular layer of C 60 and irradiating with light was repeated 100 times to obtain 100 molecular layers (8
A C 60 thin film having a thickness of 00 angstrom) was prepared. After accurately measuring the film thickness of the prepared C 60 polymerized thin film and the C 60 thin film deposited without photopolymerization, the temperature of the thin film is 400 ° C., which is the temperature at which C 60 is evaporated in a vacuum of 4 × 10 −7 Pa. Heated to 12
When the film thickness was measured after holding for a period of time, the film thickness of the thin film deposited without photopolymerization was 300 angstroms, but the film thickness of the thin film including the photopolymerization step was 670 angstroms. It was confirmed that the re-desorption of C 60 molecules from the substrate due to heating was very small. Also,
When a 10 μm × 10 μm region of the C 60 thin film was continuously observed by a contact type AFM, the image was disturbed by only a few scans with the C 60 thin film having 100 molecular layers deposited without using a photopolymerization process. No change was observed in the image of the C 60 thin film using the photopolymerization process even after 50 scans. From these facts, it was found that the C 60 's in the C 60 thin film were tightly bound to each other. A stronger film was obtained by heating the substrate at a temperature of about 150 ° C. during the photopolymerization.
【００１６】（実施例４）２００℃に保持した二硫化モ
リブデン（００１）面基板２上に、４×１０-7Ｐａの真
空下で蒸着セル１から１分子層（９オングストローム）
のＣ70を蒸着した後、シャッター３を閉じ、ビューイン
グポート４を透して紫外線ランプ５から３００ｎｍの波
長の紫外線を１分間照射した。Ｃ70を１分子層蒸着して
は光を照射する作業を１００回繰り返して１００分子層
（９００オングストローム）のＣ70薄膜を作製した。作
製されたＣ70重合薄膜と光重合を行わずに蒸着したＣ70
薄膜の膜厚を正確に測定した後、薄膜を４×１０-7Ｐａ
真空中でＣ70が蒸発する温度である４５０℃に加熱し、
１２時間保持した後、膜厚を測定したところ光重合を行
わずに蒸着した薄膜の膜厚は３００オングストロームで
あったが、光重合工程を含む薄膜の膜厚は６７０オング
ストロームであり、光重合薄膜は加熱によるＣ70分子の
基板からの再離脱が非常に小さい事が確認された。ま
た、Ｃ70薄膜を接触型ＡＦＭで１０μｍ×１０μｍの領
域を連続観察したところ、光重合プロセスを用いずに１
００分子層蒸着したＣ70薄膜では、僅か数回の走査で像
が乱れてくるのに対し、光重合プロセスを用いたＣ70薄
膜では５０回の走査を行っても像に変化が見られなかっ
た。これらの事からＣ70薄膜中のＣ60同士が強固に結び
付いている事が分かった。なお、光重合を行う際に基板
温度を１５０℃程度で加熱しておくとより強固な膜が得
られた。Example 4 On a molybdenum disulfide (001) plane substrate 2 kept at 200 ° C., one molecular layer (9 angstroms) from a deposition cell 1 under vacuum of 4 × 10 −7 Pa.
After vapor-depositing C 70 , the shutter 3 was closed, the ultraviolet ray having a wavelength of 300 nm was irradiated from the ultraviolet lamp 5 through the viewing port 4 for 1 minute. The operation of depositing one molecular layer of C 70 and irradiating with light was repeated 100 times to form a C 70 thin film having 100 molecular layers (900 Å). The prepared C 70 polymerized thin film and C 70 deposited without photopolymerization
Accurately measure the thickness of the thin film, and then measure the thin film at 4 × 10 -7 Pa
In vacuum, heat to 450 ° C, which is the temperature at which C 70 evaporates,
When the film thickness was measured after holding for 12 hours, the film thickness of the thin film deposited without photopolymerization was 300 angstroms, but the film thickness of the thin film including the photopolymerization step was 670 angstroms. It was confirmed that the re-desorption of C 70 molecules from the substrate due to heating was very small. In addition, when a 10 μm × 10 μm region of the C 70 thin film was continuously observed by a contact type AFM, it was found to be 1 without using a photopolymerization process.
In the C 70 thin film deposited by 100 molecular layers, the image is disturbed by only a few scans, whereas in the C 70 thin film using the photopolymerization process, there is no change in the image even after 50 scans. It was From these facts, it was found that the C 60 's in the C 70 thin film were tightly bound to each other. A stronger film was obtained by heating the substrate at a temperature of about 150 ° C. during the photopolymerization.
【００１７】以上の実施例では、フラーレンを１分子層
蒸着しては光を照射するというように、薄膜形成工程と
光重合工程とを交互に行ったが、フラーレンをｎ分子層
（ｎは１以上の整数）蒸着した後に、光エネルギーを加
え重合させてもよい。In the above embodiments, the thin film forming step and the photopolymerization step were alternately carried out, such as vapor deposition of one molecular layer of fullerene and irradiation with light. However, fullerene was n molecular layer (n is 1). (Integer above) After vapor deposition, light energy may be added to polymerize.
【００１８】この場合にも、実施例１〜４と同様に、加
熱によるフラーレンの基板からの再離脱が非常に小さ
く、また、ＡＦＭ観察によっても像に変化は見られなか
った。Also in this case, similar to Examples 1 to 4, the re-desorption of fullerene from the substrate due to heating was very small, and no change was observed in the image by AFM observation.
【００１９】[0019]
【発明の効果】以上述べたように、本発明の方法を用い
れば、基板からのフラーレンの再離脱や、フラーレンが
基板上で動き回り構造が乱れることなどのない強固なフ
ラーレン薄膜を得る事が出来る。工業的に応用する場
合、高品質で強固な薄膜を作る事は非常に重要である。As described above, the use of the method of the present invention makes it possible to obtain a strong fullerene thin film which does not re-disengage fullerenes from the substrate or cause the fullerenes to move around on the substrate and disturb the structure. . For industrial application, it is very important to make a high quality and strong thin film.
【図１】本発明に用いる装置の一実施例で、装置の構成
を示す図である。FIG. 1 is a diagram showing a configuration of an apparatus according to an embodiment of the apparatus used in the present invention.
１ 蒸着セル ２ 蒸着基板 ３ シャッター ４ ビューイングポート ５ 紫外線ランプ 1 vapor deposition cell 2 vapor deposition substrate 3 shutter 4 viewing port 5 ultraviolet lamp
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 ＣＨＥＭＩＣＡＬ ＰＨＹＳＩＣＳ ＬＥＴＴＥＲＳ 211 〜４，５！ （1993） Ｐ．333−336 ＣＨＥＭＩＣＡＬ ＰＨＹＳＩＣＳ ＬＥＴＴＥＲＳ 227 〜６！ （1994) Ｐ．572−578 ＣＨＥＭＩＣＡＬ ＰＨＹＳＩＣＳ ＬＥＴＴＥＲＳ 224〜１，２！ （1994） Ｐ．106−112 ＰＨＹＳ．ＲＥＶ．Ｂ：ＣＯＮＤＥＮ Ｓ．ＭＡＴＴＥＲ，51〜７！ （1995) Ｐ．4547−4556 ＳＩＥＮＣＥ，259〜5097！ （1993) Ｐ．955−957 ─────────────────────────────────────────────────── ─── Continued Front Page (56) References CHEMICAL PHYSICS LETTERS 211〜4,5! (1993) P.A. 333-336 CHEMICAL PHYSICS LETTERS 227-6! (1994) P. 572-578 CHEMICAL PHYSICS LETTERS 224-1, 2! (1994) P. 106-112 PHYS. REV. B: CONDEN S.M. MATTER, 51-7! (1995) p. 4547-4556 SIENCE, 259-5097! (1993) P. 955-957
Claims (3)
と、前記フラーレン薄膜に光エネルギーを与え、前記フ
ラーレン薄膜中のフラーレンを重合する工程を有するフ
ラーレン薄膜製造方法において、フラーレン薄膜製造工
程と光重合工程を交互に行うことを特徴とするフラーレ
ン薄膜製造方法。1. A process of forming a fullerene thin film on a substrate.
And applying light energy to the fullerene thin film,
Fullerene having a step of polymerizing fullerenes in a thin film
A method for producing a fullerene thin film, which comprises alternately performing a fullerene thin film producing step and a photopolymerization step.
のフラーレン薄膜を形成した後に、前記フラーレン薄膜
に光エネルギーを与え、前記フラーレン薄膜中のフラー
レンを重合することを特徴とするフラーレン薄膜製造方
法。2. An n-molecular layer (n is an integer of 1 or more) on a substrate
After forming the fullerene thin film, the fullerene thin film is provided with light energy to polymerize the fullerene in the fullerene thin film.
Law .
と、前記フラーレン薄膜に光エネルギーを与え、前記フ
ラーレン薄膜中のフラーレンを重合する工程を有するフ
ラーレン薄膜製造方法において、前記光重合工程におい
て、薄膜成長基板を加熱することを特徴とするフラーレ
ン薄膜製造方法。3. A step of forming a fullerene thin film on a substrate
And applying light energy to the fullerene thin film,
Fullerene having a step of polymerizing fullerenes in a thin film
In the method for producing a fullerene thin film, the thin film growth substrate is heated in the photopolymerization step, and the method for producing a fullerene thin film.
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Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7101978A JP2692644B2 (en) | 1995-04-26 | 1995-04-26 | Fullerene thin film manufacturing method |
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| Publication Number | Publication Date |
|---|---|
| JPH08295505A JPH08295505A (en) | 1996-11-12 |
| JP2692644B2 true JP2692644B2 (en) | 1997-12-17 |
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| JP2001007366A (en) * | 1999-06-25 | 2001-01-12 | Sony Corp | Charge transfer heterojunction structure and method of manufacturing the same |
| CA2312140A1 (en) | 1999-06-25 | 2000-12-25 | Matthias Ramm | Charge separation type heterojunction structure and manufacturing method therefor |
| JP5032019B2 (en) * | 2005-11-24 | 2012-09-26 | 学校法人日本大学 | Method for producing fullerene polymer |
| KR100825443B1 (en) * | 2006-05-30 | 2008-04-28 | 경희대학교 산학협력단 | Fullerene multimer having white light emission characteristics and its manufacturing method |
| KR101675650B1 (en) * | 2014-12-24 | 2016-11-14 | 동양물산기업 주식회사 | Device for maintaining mulching vynil for onion transplanter |
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Non-Patent Citations (5)
| Title |
|---|
| ＣＨＥＭＩＣＡＬ ＰＨＹＳＩＣＳ ＬＥＴＴＥＲＳ ２１１ 〜４，５！ （１９９３） Ｐ．３３３−３３６ |
| ＣＨＥＭＩＣＡＬ ＰＨＹＳＩＣＳ ＬＥＴＴＥＲＳ ２２４〜１，２！ （１９９４） Ｐ．１０６−１１２ |
| ＣＨＥＭＩＣＡＬ ＰＨＹＳＩＣＳ ＬＥＴＴＥＲＳ ２２７ 〜６！ （１９９４） Ｐ．５７２−５７８ |
| ＰＨＹＳ．ＲＥＶ．Ｂ：ＣＯＮＤＥＮＳ．ＭＡＴＴＥＲ，５１〜７！ （１９９５） Ｐ．４５４７−４５５６ |
| ＳＩＥＮＣＥ，２５９〜５０９７！ （１９９３） Ｐ．９５５−９５７ |
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|---|---|
| JPH08295505A (en) | 1996-11-12 |
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