JP2665383B2 - Dicing die-bonding film - Google Patents
Dicing die-bonding filmInfo
- Publication number
- JP2665383B2 JP2665383B2 JP29163989A JP29163989A JP2665383B2 JP 2665383 B2 JP2665383 B2 JP 2665383B2 JP 29163989 A JP29163989 A JP 29163989A JP 29163989 A JP29163989 A JP 29163989A JP 2665383 B2 JP2665383 B2 JP 2665383B2
- Authority
- JP
- Japan
- Prior art keywords
- adhesive layer
- adhesive
- film
- dicing
- thermoplastic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/8388—Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Dicing (AREA)
Description
【発明の詳細な説明】 ＜産業上の利用分野＞ 本発明は半導体ウエハのダイシングおよびダイシング
後の半導体素子の接着が容易かつ高精度に行ない得るダ
イシング・ダイボンドフィルムに関し、詳しくは半導体
素子をリードフレームや基板などの被取付体に固着する
ための接着剤を、ダイシング前の半導体ウエハに予め付
設した状態で取り扱いができるようにし、製造工程の簡
略化を行なうフィルムに関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dicing die-bonding film in which dicing of a semiconductor wafer and bonding of semiconductor elements after dicing can be performed easily and with high precision. The present invention relates to a film which allows an adhesive to be fixed to an object to be mounted such as a substrate or a substrate to be handled while being attached to a semiconductor wafer before dicing in advance, thereby simplifying a manufacturing process.
＜従来の技術＞ 回路パターンが形成された半導体ウエハは、必要に応
じて裏面研摩して厚さ調整した後、ダイシング工程で素
子小片に分断される。形成された半導体素子は、マウン
ト工程において接着剤を介し、被取付体に固着された
後、ボンディング工程に移行される。なお、ダイシング
に際しては切断層の除去などのため超純水にて適度な液
圧（通常、2kg/cm2程度）洗浄するとが通例である。<Prior Art> A semiconductor wafer on which a circuit pattern is formed is polished on the back surface as necessary to adjust the thickness, and then cut into element pieces in a dicing process. The semiconductor element thus formed is fixed to an object to be mounted via an adhesive in a mounting step, and then is transferred to a bonding step. In addition, at the time of dicing, it is customary to wash with ultrapure water at an appropriate liquid pressure (generally, about 2 kg / cm 2 ) in order to remove a cut layer.
前記において、被取付体に接着剤を付設し、この接着
剤を介して半導体素子を固着するという従来の方法で
は、接着剤層の厚さを均一にすることが困難であった
り、接着剤の付設に特殊な装置を要したり、また付設に
長時間を要したりするために、半導体素子にダイシング
する前の半導体ウエハに、予め固着用の接着剤を設ける
方法が試みられている。In the above method, it is difficult to make the thickness of the adhesive layer uniform by the conventional method of attaching an adhesive to the body to be attached and fixing the semiconductor element via the adhesive. In order to require a special device for the attachment or a long time for the attachment, a method of providing an adhesive for fixing in advance to a semiconductor wafer before dicing into a semiconductor element has been attempted.
前記の方法として、支持基材の上に導電性接着剤層を
剥離可能に付設してなるウエハ固着部材を用い、その接
着剤層に半導体ウエハを接着保持させ、該接着剤層と共
に半導体ウエハを素子小片にダイシングする。次に、支
持基材を延伸し、個々に分割形成された半導体素子を接
着剤層と共にピックアップしつつ、導電性接着剤層を介
して被取付体に固着する方法が提案されている（特開昭
60−57642号公報参照）。As the above method, a wafer fixing member in which a conductive adhesive layer is releasably provided on a supporting base material, a semiconductor wafer is bonded and held on the adhesive layer, and the semiconductor wafer is bonded together with the adhesive layer. Dicing into element pieces. Next, there has been proposed a method in which a supporting base material is stretched, and a semiconductor element which is separately formed is picked up together with an adhesive layer, and is fixed to an object to be mounted via a conductive adhesive layer (Japanese Patent Application Laid-Open No. H10-163873). Akira
No. 60-57642).
この方法では固着部材がダイシング工程において半導
体ウエハを接着保持する役割も兼ねており、工程が簡略
となる利点を有している。In this method, the fixing member also has a role of bonding and holding the semiconductor wafer in the dicing process, and has an advantage that the process is simplified.
しかしながら、支持基材と導電性接着剤層との接着力
を調整することが困難である。すなわち、半導体ウエハ
を素子小片に分断する点からは、ダイシング時に支持基
材と導電性接着剤層とが層間剥離してダイシング不能や
分断寸法ミスなどの事態が生じないように、その剥離力
に耐えうる強い保持力が要求される。一方、形成された
半導体素子を導電性接着剤層と共に支持基材から剥離す
る点からは、弱い接着力であることも要求される。その
ために、これらの背反する要求がバランスを保つよう
に、支持基材と導電性接着剤層との接着力を調整する必
要があるが、その調整は極めて困難である。特に、半導
体ウエハを回転丸刃などでダイシングする場合には、大
きい負荷がかかり高い保持力が要求される。However, it is difficult to adjust the adhesive strength between the supporting substrate and the conductive adhesive layer. In other words, from the point of dividing the semiconductor wafer into element pieces, the peeling force is set so that the supporting base material and the conductive adhesive layer are delaminated at the time of dicing so that a situation such as inability to dice or an error in the cut dimensions does not occur. A strong holding force that can withstand is required. On the other hand, in order to peel the formed semiconductor element together with the conductive adhesive layer from the supporting substrate, it is also required that the semiconductor element has a weak adhesive force. Therefore, it is necessary to adjust the adhesive force between the support base material and the conductive adhesive layer so as to maintain a balance between these contradictory requirements, but the adjustment is extremely difficult. In particular, when dicing a semiconductor wafer with a rotary round blade or the like, a large load is applied and a high holding force is required.
そこで本発明者らは、上記従来技術の欠点を解決する
ものとして、支持基材に設けた粘着層の上に、半導体ウ
エハおよび素子固着用接着を有し、その粘着層と固着用
接着層とを剥離可能に形成してなるダイシング・ダイボ
ンド用フィルムを提案した。しかし、上記欠点は解決さ
れるものの粘着層と固着用接着層の剥離性および被取付
体と固着用接着層の高温接着強度などに未だ問題が残っ
ている。Therefore, the present inventors have proposed to solve the above-mentioned drawbacks of the prior art, have a semiconductor wafer and an element fixing adhesive on the adhesive layer provided on the support substrate, and the adhesive layer and the fixing adhesive layer We have proposed a dicing / die-bonding film that is formed to be peelable. However, although the above-mentioned drawbacks are solved, problems still remain in the releasability of the pressure-sensitive adhesive layer and the fixing adhesive layer and the high-temperature adhesive strength between the adherend and the fixing adhesive layer.
＜発明が解決しようとする課題＞ 従って、本発明はダイシング時における粘着層と固着
用接着層の剥離性と接着性のバランスを保ち、ダイボン
ド時の被取付体と固着用接着層との間の接着強度、特に
高温接着強度に優れるダイシング・ダイボンドフィルム
を提供することを目的とする。<Problems to be Solved by the Invention> Accordingly, the present invention maintains the balance between the releasability and the adhesiveness of the adhesive layer and the fixing adhesive layer at the time of dicing, and maintains the balance between the adherend and the fixing adhesive layer at the time of die bonding. An object of the present invention is to provide a dicing die-bonding film having excellent bonding strength, particularly high-temperature bonding strength.
＜課題を解決するための手段＞ 本発明者らは上記目的を達成するために、さらに検討
を重ねた結果、粘着層を介した半導体素子の保持方式と
して、上記粘着層と固着用接着剤層の間に熱可塑性接着
フィルムを介在させることにより、高温接着強度が向上
し、さらにダイシング後のピックアップ時における剥離
性にも優れることを見い出したものである。また、接着
層の吸水・吸湿が低減して信頼性が向上し、かつ、ダイ
ボンド加熱時間が短縮され合理化されることを見い出
し、本発明を完成するに至った。<Means for Solving the Problems> The present inventors have further studied to achieve the above object, and as a result, as a method of holding the semiconductor element via the adhesive layer, the adhesive layer and the adhesive layer for fixing are used. It has been found that, by interposing a thermoplastic adhesive film between them, the high-temperature adhesive strength is improved and the peelability at the time of pickup after dicing is also excellent. In addition, they have found that the water absorption and moisture absorption of the adhesive layer are reduced, the reliability is improved, and the die bonding heating time is shortened and rationalized, and the present invention has been completed.
すなわち、本発明は支持基材上に粘着層、熱可塑性接
着フィルムおよびウエハ固定用接着層を順次積層してな
り、前記粘着層と熱可塑性接着フィルムが剥離可能に積
層されてなるダイシング・ダイボンドフィルムを提供す
るものである。That is, the present invention is a dicing die-bonding film in which an adhesive layer, a thermoplastic adhesive film, and an adhesive layer for fixing a wafer are sequentially laminated on a supporting substrate, and the adhesive layer and the thermoplastic adhesive film are laminated so as to be peelable. Is provided.
本発明で用いる支持基材は、半導体ウエハを固定用接
着層に固定してダイシングした後、ダイボンドするまで
の間半導体ウエハを支持するものであり、一般にポリプ
ロピレン、ポリエチレン、ポリエステル、ポリカーボネ
ート、エチレン・酢酸ビニル共重合体、エチレン・プロ
ピレン共重合体、エチレン・エチルアクリレート共集合
体、ポリ塩化ビニルの如きプラスチックからなるフィル
ムや、金属箔などが用いられる。帯電防止能を有するプ
ラスチック系の支持基材は、導電性物質、例えば金属、
合金、その酸化物などからなる厚さ30〜500Åの蒸着層
を有するフィルムや、このフィルムのラミネート体など
として得ることができる。支持基材の厚さは５〜200μ
ｍ、就中10〜100μｍが一般的である。The support base material used in the present invention is used to support the semiconductor wafer until the semiconductor wafer is fixed to the fixing adhesive layer and diced, and then die-bonded, and is generally polypropylene, polyethylene, polyester, polycarbonate, ethylene / acetic acid. A film made of a plastic such as a vinyl copolymer, an ethylene-propylene copolymer, an ethylene-ethyl acrylate copolymer, polyvinyl chloride, or a metal foil is used. Plastic-based support base material having antistatic ability is a conductive material, for example, metal,
It can be obtained as a film having a 30 to 500 mm thick vapor-deposited layer made of an alloy, an oxide thereof, or the like, or a laminate of this film. Support substrate thickness is 5-200μ
m, especially 10 to 100 μm.
本発明において支持基材上には、後述する熱可塑性接
着フィルムと剥離可能に設けられた粘着層が積層されて
いる。In the present invention, a thermoplastic adhesive film to be described later and a pressure-sensitive adhesive layer releasably provided are laminated on the support base material.
この粘着層はダイシングした後、半導体素子をピック
アップする際に、熱可塑性接着フィルムと容易に剥離で
きるものであり、その材質は特に限定されない。This adhesive layer can be easily peeled off from the thermoplastic adhesive film when the semiconductor element is picked up after dicing, and its material is not particularly limited.
本発明のフィルムにおいて上記粘着層と熱可塑性接着
フィルムとの接着力は、180度ピール値（常温、引張速
度300mm/分）に基づき、半導体ウエハの分断時において
200g/20mm以上、形成された半導体チップの剥離時にお
いて150g/20mm以下となるように粘着層ないし熱可塑性
接着フィルムを調製したものが、分断時の保持力、剥離
時の剥離容易性などの点から好ましい。In the film of the present invention, the adhesive force between the pressure-sensitive adhesive layer and the thermoplastic adhesive film is based on a 180-degree peel value (normal temperature, a tensile speed of 300 mm / min).
200 g / 20 mm or more, when the formed semiconductor chip is peeled, the adhesive layer or the thermoplastic adhesive film is prepared to be 150 g / 20 mm or less, but the holding force at the time of separation, the ease of peeling at the time of peeling, etc. Is preferred.
剥離を可能とする方式については特に限定はなく、剥
離工程において粘着層と熱可塑性接着フィルムとの接着
力を低下、ないし喪失させうる方式であればよい。その
例としては、粘着層の硬化方式、発泡方式ないし加熱膨
張方式、ブルーミング方式、粘着層ないし熱可塑性接着
フィルムの冷却方式、粘着層と熱可塑性接着フィルム層
との間に加熱処理で作用する接着力低減層を介在させる
方式などがあげられる。本発明ではこれらの方式を適宜
に組み合わせて用いてもよい。There is no particular limitation on a method that enables peeling, and any method may be used as long as the adhesive force between the adhesive layer and the thermoplastic adhesive film can be reduced or lost in the peeling step. Examples of the method include a curing method for an adhesive layer, a foaming method or a heat expansion method, a blooming method, a cooling method for an adhesive layer or a thermoplastic adhesive film, and an adhesive acting by a heat treatment between an adhesive layer and a thermoplastic adhesive film layer. Examples include a method in which a force reduction layer is interposed. In the present invention, these methods may be used in an appropriate combination.
前記した粘着層の硬化方式は、架橋度を増大させて接
着力を低下させるもので、その形成は紫外線硬化型や加
熱硬化型などの感圧接着剤を用いることにより行なうこ
とができる。The above-mentioned method of curing the pressure-sensitive adhesive layer increases the degree of cross-linking and lowers the adhesive strength, and the formation can be performed by using a pressure-sensitive adhesive such as an ultraviolet-curable or heat-curable adhesive.
紫外線硬化型の感圧接着剤の代表例としては、不飽和
結合を２個以上有する付加重合性化合物やエポキシ基を
有するアルコキシシランの如き光重合性化合物と、カル
ボニル化合物や有機硫黄化合物、過酸化物、アミン、オ
ニウム塩系化合物の如き光重合開始剤を配合したゴム系
感圧接着剤や、アクリル系感圧接着剤などがあげられる
（特開昭60−196956号公報）。光重合性化合物、光重合
開始剤の配合量は、それぞれベースポリマー100重量部
あたり10〜500重量部、0.1〜20重量部が一般的である。
なお、アクリル系ポリマーには、通例のもの（特公昭57
−54068号公報、特公昭58−33909号公報等）のほか、側
鎖にラジカル反応性不飽和基を有するもの（特公昭61−
56264号公報）や、分子中にエポキシ基を有するものな
ども用いうる。また、不飽和結合を２個以上有する付加
重合性化合物としては、例えばアクリル酸やメタクリル
酸の多価アルコール系エステルやオリゴエステル、エポ
キシ系やウレタン系化合物などがあげられる。さらに、
エチレングリコールジグリシジルエーテルの如き分子中
にエポキシ基を１個又は２個以上有するエポキシ基官能
性架橋剤を追加配合して架橋効率を上げることもでき
る。紫外線硬化型の粘着層を形成する場合には紫外線照
射処理を可能とすべく支持基材には透明なフィルムなと
が用いられる。Representative examples of UV-curable pressure-sensitive adhesives include addition-polymerizable compounds having two or more unsaturated bonds, photopolymerizable compounds such as alkoxysilanes having epoxy groups, carbonyl compounds, organic sulfur compounds, and peroxides. Pressure-sensitive adhesives and acrylic pressure-sensitive adhesives containing a photopolymerization initiator such as a compound, an amine or an onium salt-based compound (JP-A-60-196956). The compounding amounts of the photopolymerizable compound and the photopolymerization initiator are generally 10 to 500 parts by weight and 0.1 to 20 parts by weight, respectively, per 100 parts by weight of the base polymer.
In addition, the acrylic polymer is a common one (Japanese Patent Publication No. Sho 57
54068, Japanese Patent Publication No. 58-33909, etc., and those having a radically reactive unsaturated group in the side chain (Japanese Patent Publication No. 61-33909).
No. 56264) and those having an epoxy group in the molecule can also be used. Examples of the addition polymerizable compound having two or more unsaturated bonds include polyhydric alcohol esters and oligoesters of acrylic acid and methacrylic acid, and epoxy and urethane compounds. further,
The crosslinking efficiency can be increased by additionally blending an epoxy group-functional crosslinking agent having one or more epoxy groups in a molecule such as ethylene glycol diglycidyl ether. When forming an ultraviolet-curable pressure-sensitive adhesive layer, a transparent film is used as a supporting substrate so as to enable an ultraviolet irradiation treatment.
加熱架橋型の粘着剤の代表例としては、ポリイソシア
ネート、メラミン樹脂、アミン−エポキシ樹脂、過酸化
物、金属キレート化合物の如き架橋剤や、必要に応じジ
ビニルベンゼン、エチレングリコールジアクリレート、
トリメチロールプロパントリメタクリレートの如き多官
能性化合物からなる架橋調節剤などを配合したゴム系粘
着剤やアクリル系粘着剤などがあげられる。Representative examples of heat-crosslinkable pressure-sensitive adhesives include crosslinkers such as polyisocyanates, melamine resins, amine-epoxy resins, peroxides, metal chelate compounds, and, if necessary, divinylbenzene, ethylene glycol diacrylate,
Rubber-based pressure-sensitive adhesives and acrylic-based pressure-sensitive adhesives containing a cross-linking regulator composed of a polyfunctional compound such as trimethylolpropane trimethacrylate are exemplified.
粘着層の発泡方式、ないし加熱膨張方式は、加熱処理
で粘着層を発泡構造とすることにより、あるいは当該層
の膨張下に表面を凹凸構造とすることにより、接着面積
を減少させて接着力を低下させるもので、その形成は粘
着層に発泡剤、ないし加熱膨脹剤を含有させることによ
り行なうことができる。前記した硬化方式との併用は、
接着力の低下に特に有効である。The foaming method of the pressure-sensitive adhesive layer, or the heat expansion method, is to reduce the bonding area by forming the pressure-sensitive adhesive layer into a foamed structure by heat treatment, or by forming the surface of the pressure-sensitive adhesive layer with an uneven structure under expansion. The formation can be carried out by adding a foaming agent or a heat expansion agent to the adhesive layer. Combination with the curing method described above,
It is particularly effective for reducing the adhesive strength.
発泡剤としては、例えば炭酸アンモニウムやアジド類
の如き無機系発泡剤、アゾ系化合物やヒドラジン系化合
物、セミカルバジド系化合物、トリアゾール系化合物、
Ｎ−ニトロソ系化合物の如き有機系発泡剤など、公知物
を用いてよい。加熱膨脹剤としても、例えばガス等を封
入したマイクロカプセルなど、公知物を用いてよい。前
記のマイクロカプセルは、発泡剤としても用いることが
できて、前記した膨脹による表面凹凸構造とするか発泡
による発泡構造とするかを制御することができ、また粘
着剤中に容易に分散させることができて好ましく用いう
る。発泡剤ないし加熱膨脹剤の使用量は、ベースポリマ
ー100重量部あたり３〜300重量部が一般的である。Examples of the foaming agent include inorganic foaming agents such as ammonium carbonate and azides, azo compounds and hydrazine compounds, semicarbazide compounds, triazole compounds,
Known substances such as an organic foaming agent such as an N-nitroso compound may be used. As the heat-expanding agent, a known material such as a microcapsule in which gas or the like is sealed may be used. The microcapsules can also be used as a foaming agent, and can control whether to have a surface uneven structure due to expansion or a foamed structure due to foaming, and can be easily dispersed in an adhesive. Can be preferably used. The amount of the foaming agent or the heat expanding agent is generally 3 to 300 parts by weight per 100 parts by weight of the base polymer.
粘着層のブルーミング方式は、加熱処理で熱可塑性接
着フィルムとの界面にブルーミング剤を活発に滲出させ
て接着力を低下させるもので、その形成は粘着層にブル
ーミング剤を含有させることにより行なうことができ
る。用いるブルーミング剤は、熱可塑性接着フィルムと
の界面における接着力を低下させるものであればよく、
一般には界面活性剤やシリコーン組成物、パラフインや
ワックスなどの低融点物質などが用いられる。有機溶剤
や水などの液体もマイクロカプセル化して用いることが
できる。界面活性剤の使用は帯電防止能を付与しうる利
点などもある。ブルーミング剤の使用量は、ベースホリ
マー100重量部あたり10〜300重量部が一般的である。The blooming method of the pressure-sensitive adhesive layer is to reduce the adhesive force by actively leaching the blooming agent to the interface with the thermoplastic adhesive film by heat treatment, and the formation can be performed by including the blooming agent in the pressure-sensitive adhesive layer. it can. The blooming agent to be used may be any one that reduces the adhesive force at the interface with the thermoplastic adhesive film,
Generally, a surfactant, a silicone composition, a low-melting substance such as paraffin or wax is used. Liquids such as organic solvents and water can also be microencapsulated and used. The use of a surfactant also has an advantage that antistatic ability can be imparted. The amount of the blooming agent used is generally 10 to 300 parts by weight per 100 parts by weight of the base polymer.
粘着層ないし熱可塑性接着フィルムの冷却方式は、低
温化により接着力を低下させるもので、冷却温度は−30
℃程度までが一般的である。冷却方式は他の方式を適用
したあとに適用することもできる。The cooling method of the adhesive layer or the thermoplastic adhesive film is to lower the adhesive strength by lowering the temperature, and the cooling temperature is -30.
Generally up to about ° C. The cooling method can be applied after applying another method.
加熱処理で作用する接着力低減層を介在させる方式
は、熱可塑性接着フィルムと粘着層との間に、接着力低
減層を固形層として設け、加熱処理によって接着力低減
層を変化させて当該界面の接着力を低減させるものであ
る。接着力低減層の形成には、前記マイクロカプセル下
した発泡剤、ないし加熱膨脹剤やブルーミング剤のほ
か、加熱処理で軟化ないし流動体下するパラフインやワ
ックスなどの低融点物質も用いうる。接着力低減層は粘
着層等の面上に部分塗布やパターン塗布した状態のもの
として形成してもよく、熱可塑性接着フィルムと粘着層
との界面の前面を占有する必要はない。In the method of interposing an adhesive force reducing layer acting by heat treatment, an adhesive force reducing layer is provided as a solid layer between the thermoplastic adhesive film and the adhesive layer, and the adhesive force reducing layer is changed by heat treatment to form the interface. Is intended to reduce the adhesive strength. In order to form the adhesive force reducing layer, a low melting point substance such as paraffin or wax that softens or becomes a fluid under heat treatment can be used in addition to the foaming agent under the microcapsule, the heat expanding agent and the blooming agent. The adhesive strength reducing layer may be formed as a partially applied or pattern-coated state on the surface of the adhesive layer or the like, and does not need to occupy the front surface of the interface between the thermoplastic adhesive film and the adhesive layer.
本発明において粘着層の厚さは１〜100μｍ、就中１
〜40μｍが適当である。In the present invention, the thickness of the adhesive layer is 1 to 100 μm, preferably 1 to 100 μm.
4040 μm is appropriate.
本発明において用いる熱可塑性接着フィルムは、本発
明のダイシング・ダイボンドフィルムに半導体ウエハを
固着し、ダイシングしたのち、ピックアップ工程によっ
て半導体素子、ウエハ固定用接着層と共に、隣接する粘
着層の界面から剥離、除去され、ダイバンド時に加わる
熱によって溶融し、被取付体と接着するものであり、そ
の材質は特に限定されない。例えば、加熱温度150〜400
℃、好ましくは200〜350℃で溶融接着するものが使用で
き、具体的なフィルムとしては、ポリエーテルイミド、
シロキサン含有ポリイミド、含フッ素ポリイミドの如き
ポリイミド系フィルムの他、Ｕポリマー、アクリル系ポ
リマー、芳香族ポリエステルなどが挙げられる。なお、
該フィルムの厚さは１〜100μｍが適当である。The thermoplastic adhesive film used in the present invention, the semiconductor wafer is fixed to the dicing die-bonding film of the present invention, after dicing, the semiconductor element by the pick-up step, together with the wafer fixing adhesive layer, peeled from the interface of the adjacent adhesive layer, It is removed and melted by the heat applied during the die band and adheres to the attached body, and its material is not particularly limited. For example, heating temperature 150-400
C., preferably those that melt and adhere at 200 to 350 ° C., and specific films include polyetherimide,
In addition to polyimide-based films such as siloxane-containing polyimides and fluorine-containing polyimides, U polymers, acrylic polymers, aromatic polyesters and the like can be mentioned. In addition,
The thickness of the film is suitably from 1 to 100 μm.
ウエハ固定用接着層は、ダイシング工程時に半導体ウ
エハを支持し、素子に分断後、ピックアップ工程および
ダイボンド工程時に、その両面に半導体素子と熱可塑性
接着フィルムを接着、保持するものであり、常温から10
0℃の温度域で粘着性を有し、ダイボンド時の加熱にも
耐えうるものである。このような接着層を形成する接着
剤としては、熱可塑性樹脂や熱硬化性樹脂からなる適当
な接着剤を用いる。The wafer fixing adhesive layer supports the semiconductor wafer at the time of the dicing step, and after dividing into elements, adheres and holds the semiconductor element and the thermoplastic adhesive film on both surfaces thereof at the time of the pickup step and the die bonding step.
It has tackiness in the temperature range of 0 ° C. and can withstand heating during die bonding. As an adhesive for forming such an adhesive layer, an appropriate adhesive made of a thermoplastic resin or a thermosetting resin is used.
一般にはエチレン・酢酸ビニル共重合体、エチレン・
アクリル酸エステル共重合体、ポリエチレン、ポリプロ
ピレン、ポリアミドポリエーテルスルホン、ポリスルホ
ン、ポリエステル、ポリカーボネート、セルロース誘導
体、ポリビニルアセタール、ポリビニルエーテル、ポリ
ウレタン、フェノキシ樹脂の如き熱可塑性樹脂からなる
ホットメルト型接着剤、エポキシ樹脂、ポリイミド樹
脂、マレイミド樹脂、シリコーン樹脂、フェノール樹脂
の如き熱硬化性樹脂を用いた接着剤、その他アクリル樹
脂、ゴム系ポリマー、フッ素ゴム系ポリマー、フッ素樹
脂などからなる接着剤も用いられる。熱硬化性樹脂系接
着剤による固定用接着層は、Ｂステージ状態として形成
される。固定用接着層に、例えばアルミニウム、銅、
銀、金、パラジウム、カーボンの如き導電性物質からな
る微粉末を含有させて導電性を付与してもよい。また、
アルミナの如き熱伝導性物質からなる微粉末を含有させ
て熱伝導性を高めてもよい。Generally, ethylene-vinyl acetate copolymer, ethylene
Hot-melt adhesives made of thermoplastic resins such as acrylate copolymers, polyethylene, polypropylene, polyamide polyether sulfone, polysulfone, polyester, polycarbonate, cellulose derivatives, polyvinyl acetal, polyvinyl ether, polyurethane, and phenoxy resins, epoxy resins An adhesive using a thermosetting resin such as a polyimide resin, a maleimide resin, a silicone resin, and a phenol resin, and an adhesive made of an acrylic resin, a rubber-based polymer, a fluororubber-based polymer, a fluororesin, and the like are also used. The fixing adhesive layer made of the thermosetting resin-based adhesive is formed in a B-stage state. For the fixing adhesive layer, for example, aluminum, copper,
Conductivity may be imparted by incorporating fine powder made of a conductive substance such as silver, gold, palladium, or carbon. Also,
The thermal conductivity may be increased by including a fine powder made of a thermally conductive substance such as alumina.
本発明のフィルムはウエハ固定用接着用に半導体ウエ
ハを固定し、ダイシング時にウエハと共に固定用接着層
および熱可塑性接着フィルムを分断後、熱可塑性接着フ
ィルムと粘着層とを界面で剥離し、加熱によって半導体
素子を固定用接着層および熱可塑性接着フィルムを介し
て被取付体に接着固定して使用する。The film of the present invention fixes a semiconductor wafer for bonding for fixing a wafer, and after dicing the fixing adhesive layer and the thermoplastic adhesive film together with the wafer at the time of dicing, the thermoplastic adhesive film and the adhesive layer are separated at the interface, and heated. The semiconductor element is used by being adhered and fixed to a body to be attached via a fixing adhesive layer and a thermoplastic adhesive film.
＜発明の効果＞ 本発明によれば、粘着層の上に剥離可能に設けた熱可
塑性接着フィルムと固定用接着層を介して半導体ウエハ
を接着固定するようにしたので、半導体素子への分断時
に半導体ウエハを充分な保持力で固定することができる
と共に、形成した半導体素子を熱可塑性接着フィルムと
共にスムースに剥離することができ、その熱可塑性接着
フィルムを被取付体への固定にそのまま利用することが
できる。<Effects of the Invention> According to the present invention, a semiconductor wafer is bonded and fixed via a fixing adhesive layer and a thermoplastic adhesive film releasably provided on an adhesive layer. The semiconductor wafer can be fixed with sufficient holding force, and the formed semiconductor element can be smoothly peeled off together with the thermoplastic adhesive film, and the thermoplastic adhesive film can be used as it is for fixing to the attached body. Can be.
また、本発明では熱可塑性接着フィルムをピックアッ
プ時の粘着層との剥離面に設けているので、剥離性が良
好となると共に、ダイボンド時の高温接着強度の向上が
図れる。Further, in the present invention, since the thermoplastic adhesive film is provided on the peeling surface from the adhesive layer at the time of pickup, the peelability is improved and the high-temperature adhesive strength at the time of die bonding can be improved.
＜実施例＞ 以下に本発明の実施例を示し、さらに具体的に説明す
るが、本発明の技術的思想を逸脱しない範囲で種々変形
できるものである。<Examples> Examples of the present invention will be described below, and will be described more specifically. However, various modifications can be made without departing from the technical idea of the present invention.
実施例１ 図面に示すように、支持基材４として50μｍ厚のポリ
塩化ビニル上に、アクリル系共重合物を主成分とするUV
硬化型粘着剤層３を、乾燥厚が30μｍ厚となるように塗
工した。Example 1 As shown in the drawing, on a polyvinyl chloride having a thickness of 50 μm as a support substrate 4, a UV mainly containing an acrylic copolymer was used.
The curable pressure-sensitive adhesive layer 3 was applied so as to have a dry thickness of 30 μm.
一方、剥離処理したポリエステルフィルムに、Ｂステ
ージのエポキシ系ウエハ固定用接着剤層１（ビスフェノ
ールＡ型エポキシ酸無水物）を５μｍ厚となるように塗
工したのち、該接着剤層１の表面に20μｍ厚のポリエー
テルイミド系熱可塑性接着フィルム２（ウルテム1000,G
E社製）を積層した。On the other hand, a B-stage epoxy-based wafer fixing adhesive layer 1 (bisphenol A type epoxy anhydride) is applied to the peeled polyester film so as to have a thickness of 5 μm. 20 µm thick polyetherimide-based thermoplastic adhesive film 2 (Ultem 1000, G
E company).
次いで、上記粘着剤層３と接着フィルム２とを隣接す
るように貼り合わせ、ポリエステルフィルムを剥離して
本発明のダイシング・ダイボンドフィルムを得た。Next, the pressure-sensitive adhesive layer 3 and the adhesive film 2 were adhered so as to be adjacent to each other, and the polyester film was peeled off to obtain a dicing die-bonding film of the present invention.
得られたフィルムのウエハ固定用接着層面に４インチ
のミラーウエハを60℃でロール圧着し、2mm角の半導体
素子にダイシングしたところ、チップ飛び等の不良は認
められなかった。また、ダイシング後、UV照射により熱
可塑性接着フィルムと粘着層との界面がピックアップ工
程にて容易に剥離できた。次いで接着剤層付チップを35
0℃にてアロイ−42フレームにダイボンドし、その剪断
接着力を測定した。その結果、剪断接着力は3kg以上で
あり、高温時においても充分な接着力を有することが判
明した。When a 4-inch mirror wafer was roll-pressed at 60 ° C. to the wafer fixing adhesive layer surface of the obtained film and diced into a 2 mm square semiconductor element, no defects such as chip fly were found. After dicing, the interface between the thermoplastic adhesive film and the pressure-sensitive adhesive layer could be easily peeled off in the pickup step by UV irradiation. Next, insert the chip with adhesive layer into 35
It was die-bonded to an Alloy-42 frame at 0 ° C, and its shear adhesive strength was measured. As a result, the shear adhesive strength was 3 kg or more, and it was found that the adhesive strength was sufficient even at high temperatures.
実施例２ 実施例１で用いたポリエーテルイミド系熱可塑性接着
フィルムに代えて、ポリエステル系熱可塑性接着フィル
ム（エチレングリコール／テレフタル酸／イソフタル酸
共重合体Tm＝230℃）を用いた以外は、すべて実施例１
と同様にして本発明のダイシング・ダイボンドフィルム
を得た。これを実施例１と同様に評価したところ、各工
程における不良は認められず、ダイシング・ダイボンド
フィルムとして良好なものであることが明らかとなっ
た。Example 2 A polyester-based thermoplastic adhesive film (ethylene glycol / terephthalic acid / isophthalic acid copolymer Tm = 230 ° C.) was used instead of the polyetherimide-based thermoplastic adhesive film used in Example 1, except that All Example 1
In the same manner as in the above, a dicing die-bonding film of the present invention was obtained. When this was evaluated in the same manner as in Example 1, no defect was observed in each step, and it was clear that the film was good as a dicing die-bonding film.
図面は実施例に示す本発明のダイシング・ダイボンドフ
ィルムの断面図である。 １……ウエハ固定用接着層、２……熱可塑性接着フィル
ム、３……粘着層、４……支持基材The drawing is a cross-sectional view of the dicing die-bonding film of the present invention shown in Examples. DESCRIPTION OF SYMBOLS 1 ... Adhesive layer for wafer fixing, 2 ... Thermoplastic adhesive film, 3 ... Adhesive layer, 4 ... Support base material
Claims (2)
ムおよびウエハ固定用接着層を順次積層してなり、 前記粘着層と熱可塑性接着フィルムが剥離可能状態にて
積層されていることを特徴とするダイシング・ダイボン
ドフィルム。An adhesive layer, a thermoplastic adhesive film, and an adhesive layer for fixing a wafer are sequentially laminated on a supporting substrate, and the adhesive layer and the thermoplastic adhesive film are laminated in a peelable state. Dicing die-bonding film.
はポリエステル系フィルムである請求項（１）記載のダ
イシング・ダイボンドフィルム。2. The dicing die-bonding film according to claim 1, wherein the thermoplastic adhesive film is a polyimide-based or polyester-based film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29163989A JP2665383B2 (en) | 1989-11-09 | 1989-11-09 | Dicing die-bonding film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29163989A JP2665383B2 (en) | 1989-11-09 | 1989-11-09 | Dicing die-bonding film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03152942A JPH03152942A (en) | 1991-06-28 |
| JP2665383B2 true JP2665383B2 (en) | 1997-10-22 |
Family
ID=17771555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29163989A Expired - Lifetime JP2665383B2 (en) | 1989-11-09 | 1989-11-09 | Dicing die-bonding film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2665383B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101187591B1 (en) * | 2003-12-24 | 2012-10-11 | 다우 코닝 도레이 캄파니 리미티드 | Dicing/die bonding film and method of manufacturing the same |
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|---|---|---|---|---|
| US5762744A (en) * | 1991-12-27 | 1998-06-09 | Rohm Co., Ltd. | Method of producing a semiconductor device using an expand tape |
| CA2118994A1 (en) * | 1993-06-21 | 1994-12-22 | Claude L. Bertin | Polyimide-insulated cube package of stacked semiconductor device chips |
| JP2000038556A (en) | 1998-07-22 | 2000-02-08 | Nitto Denko Corp | Semiconductor wafer-retaining protective hot-melt sheet and method for application thereof |
| JP2000204332A (en) * | 1999-01-08 | 2000-07-25 | Minnesota Mining & Mfg Co <3M> | Heat-peeling adhesive composition and bonded structural form |
| JP2002217437A (en) * | 2001-01-23 | 2002-08-02 | Sony Corp | Manufacture of thin-film semiconductor element |
| JP4649792B2 (en) * | 2001-07-19 | 2011-03-16 | 日本電気株式会社 | Semiconductor device |
| US7399683B2 (en) | 2002-06-18 | 2008-07-15 | Sanyo Electric Co., Ltd. | Manufacturing method of semiconductor device |
| JP4690907B2 (en) * | 2006-02-22 | 2011-06-01 | 古河電気工業株式会社 | Dicing die bond sheet for laser dicing |
| KR100963675B1 (en) * | 2008-03-14 | 2010-06-15 | 제일모직주식회사 | Multifunctional tape for semiconductor packaging and manufacturing method of semiconductor device using same |
| JP4661889B2 (en) * | 2008-03-17 | 2011-03-30 | 住友ベークライト株式会社 | Die attach film with dicing sheet function and method for manufacturing semiconductor device using the same |
| WO2015029723A1 (en) * | 2013-08-30 | 2015-03-05 | Jsr株式会社 | Adherend recovery method, adherend recovery device, gas generation membrane, and resin composition |
| JP6616738B2 (en) * | 2016-06-09 | 2019-12-04 | 積水化学工業株式会社 | LAMINATED SHEET AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| CN113410164B (en) * | 2021-06-15 | 2024-04-09 | 珠海天成先进半导体科技有限公司 | Single-chip DAF adhesive tape crystal bonding method |
-
1989
- 1989-11-09 JP JP29163989A patent/JP2665383B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101187591B1 (en) * | 2003-12-24 | 2012-10-11 | 다우 코닝 도레이 캄파니 리미티드 | Dicing/die bonding film and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03152942A (en) | 1991-06-28 |
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