JP2638185B2 - Manufacturing method of photoreceptor for electrophotography - Google Patents
Manufacturing method of photoreceptor for electrophotographyInfo
- Publication number
- JP2638185B2 JP2638185B2 JP1053283A JP5328389A JP2638185B2 JP 2638185 B2 JP2638185 B2 JP 2638185B2 JP 1053283 A JP1053283 A JP 1053283A JP 5328389 A JP5328389 A JP 5328389A JP 2638185 B2 JP2638185 B2 JP 2638185B2
- Authority
- JP
- Japan
- Prior art keywords
- tellurium
- photoreceptor
- selenium
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 108091008695 photoreceptors Proteins 0.000 title description 22
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052714 tellurium Inorganic materials 0.000 claims description 19
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 19
- 229910001215 Te alloy Inorganic materials 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000004458 analytical method Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 40
- 230000035945 sensitivity Effects 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 10
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 6
- 229910052711 selenium Inorganic materials 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 4
- 238000012854 evaluation process Methods 0.000 description 3
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- QLNFINLXAKOTJB-UHFFFAOYSA-N [As].[Se] Chemical compound [As].[Se] QLNFINLXAKOTJB-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、アルミニウムを主成分とする材料からな
る基体上にセレン系光導電性材料からなる感光層を有
し、デジタル複写機,レーザプリンタ,ファクシミリあ
るいは発光ダイオードプリンタなどに好適に用いられる
電子写真用感光体の製造方法に関する。Description: BACKGROUND OF THE INVENTION The present invention relates to a digital copying machine, a laser printer, and the like, having a photosensitive layer made of a selenium-based photoconductive material on a base made of a material mainly containing aluminum. The present invention relates to a method of manufacturing an electrophotographic photoreceptor suitably used for a facsimile, a facsimile or a light emitting diode printer.
電子写真を応用したレーザプリンタ,ファクシミリあ
るいは発光ダイオードプリンタなどのプラス帯電方式の
高速型の装置では、近年、半減衰露光量が0.4μJ/cm2と
いう高感度の電子写真用感光体(以下単に感光体とも称
する)が要求されるようになってきた。また、高解像度
の低速プリンタやカラーデジタル複写機などの装置で
は、画像の再現性を良くするために、暗減衰が少なく、
帯電位の低下,残留電位の上昇などの疲労が少ない安定
した性能の感光体が要求されるようになってきた。In recent years, high-speed positive-charging type devices such as laser printers, facsimile machines, and light-emitting diode printers to which electrophotography is applied have recently been developed to provide highly sensitive electrophotographic photoconductors having a half-attenuation exposure of 0.4 μJ / cm 2 (hereinafter simply referred to as photosensitive (Also referred to as the body). Also, in devices such as high-resolution low-speed printers and color digital copiers, in order to improve image reproducibility, dark decay is small,
There has been a demand for a photoreceptor having stable performance with little fatigue such as a decrease in charged potential and an increase in residual potential.
このような要望にこたえるものとして、本出願人は、
導電性基体上にキャリア輸送層,キャリア発生層,表面
保護層を順次積層してなる機能分離型感光体において、
純セレンまたは低テルル濃度のセレン・テルル合金から
なるキャリア輸送層上に、高テルル濃度のキャリア発生
部と、このキャリア発生部とキャリア輸送層との間に介
在する,セレン・テルル合金からなりそのテルル濃度が
キャリア発生部側が高くキャリア輸送層側に向かって連
続的に低くなっているキャリア注入部とで構成されるキ
ャリア発生層を設け、その上に表面保護層を形成した感
光体(特開昭61−52648号公報)を提案した。また、純
セレンまたは低テルル濃度のセレン・テルル合金からな
るキャリア輸送層上に、5〜5000ppmのハロゲンを含む
セレン合金からなるトラップ層を介在させて高テルル濃
度のセレン・テルル合金からなるキャリア発生層を設
け、さらにその上に表面保護層を形成した感光体(特開
昭61−52650号公報)を提案した。In response to such a request, the applicant has
A function-separated type photoconductor in which a carrier transport layer, a carrier generation layer, and a surface protection layer are sequentially laminated on a conductive substrate,
On a carrier transporting layer made of pure selenium or a selenium-tellurium alloy having a low tellurium concentration, a carrier generating portion having a high tellurium concentration and a selenium-tellurium alloy interposed between the carrier generating portion and the carrier transporting layer are formed. Photoreceptor in which a carrier generating layer composed of a carrier injecting portion having a high tellurium concentration on the carrier generating portion side and continuously decreasing toward the carrier transport layer side is provided, and a surface protective layer is formed thereon No. 61-52648). In addition, a carrier layer composed of a selenium-tellurium alloy having a high tellurium concentration is formed on a carrier transport layer composed of pure selenium or a selenium-tellurium alloy having a low tellurium concentration by interposing a trap layer composed of a selenium alloy containing a halogen of 5 to 5000 ppm. A photoreceptor in which a layer is provided and a surface protective layer is further formed thereon has been proposed (JP-A-61-52650).
上述のような構成の感光体において、特にキャリア発
生層の膜厚とテルル濃度とが感度と暗減衰,疲労に大き
く影響する。膜厚は経時変化を防ぐために0.1μm以上
は必要であるが、膜厚0.3μm以上,テルル濃度48重量
%以上となると暗減衰,疲労が大きくなるので,これ以
下の範囲内で感光体の各層の材料,膜厚,特にキャリア
注入部のテルル濃度勾配あるいはトラップ層のハロゲン
量,膜厚の最適化を図ってきたが、製造上、高度の技術
が要求される。さらに、レーザプリンタなど長波長光用
の感光体の用途が拡大するにつれて、特性に対する要望
がますます厳しくなり、特性の改善,特に繰り返し使用
における暗減衰,疲労の改善が望まれていた。In the photoreceptor having the above-described configuration, the thickness of the carrier generation layer and the tellurium concentration particularly greatly affect sensitivity, dark decay, and fatigue. The film thickness is required to be 0.1 μm or more to prevent time-dependent changes. However, when the film thickness is 0.3 μm or more and the tellurium concentration is 48% by weight or more, dark decay and fatigue become large. The material and the film thickness, especially the tellurium concentration gradient at the carrier injection portion or the halogen amount and the film thickness of the trap layer have been optimized, but a high level of technology is required in manufacturing. Further, as the applications of photoreceptors for long-wavelength light such as laser printers have been expanded, demands for characteristics have become more severe, and there has been a demand for improvements in characteristics, particularly, in dark attenuation and fatigue in repeated use.
この発明は、これらの点に鑑みてなされたものであっ
て、高感度で、かつ、繰り返し使用における暗減衰,疲
労が少なく、長波長光を露光光源として用いる電子写真
装置にも好適に用いられる、安定した性能の感光体を容
易に製造することができる方法を提供することを目的と
する。The present invention has been made in view of these points, and is suitably used in an electrophotographic apparatus which has high sensitivity, has little dark attenuation and fatigue in repeated use, and uses long wavelength light as an exposure light source. It is another object of the present invention to provide a method for easily producing a photosensitive member having stable performance.
上記の目的は、この発明によれば、アルミニウムを主
成分とする材料からなる基体の表面を、ESCA分析による
酸化度が3.50以上のアルミニウムの酸化膜が生じるよう
に純水中で煮沸したのち、この基体上に純セレンからな
る電荷輸送層と40〜42重量%のテルルを含むセレン・テ
ルル合金からなるキャリア発生層とを含む感光層を形成
することによって達成される。According to the present invention, the object of the present invention is to boil the surface of a substrate made of a material containing aluminum as a main component in pure water such that an aluminum oxide film having a degree of oxidation by ESCA analysis of 3.50 or more is formed. This is achieved by forming a photosensitive layer including a charge transport layer composed of pure selenium and a carrier generation layer composed of a selenium-tellurium alloy containing 40 to 42% by weight of tellurium on the substrate.
この発明の方法により処理された基体を用いると、キ
ャリア発生層を形成するセレン・テルル合金のテルル濃
度を高くしたり、キャリア発生層の膜厚を厚くしたりす
ることなく、感光体の感度を向上させることができ、繰
り返し使用における暗減衰,疲労を悪化させることなく
高感度の感光体を得ることができる。また、同一感度の
感光体を製造する場合には、キャリア発生層のテルル濃
度を低減することができるので、暗減衰,疲労が少なく
なり、繰り返し使用においてより安定した性能の感光体
が得られることになる。When the substrate treated by the method of the present invention is used, the sensitivity of the photoreceptor can be improved without increasing the tellurium concentration of the selenium-tellurium alloy forming the carrier generation layer or increasing the thickness of the carrier generation layer. Thus, a photosensitive member having high sensitivity can be obtained without worsening dark decay and fatigue in repeated use. Also, when photoconductors having the same sensitivity are manufactured, the tellurium concentration in the carrier generation layer can be reduced, so that dark decay and fatigue are reduced, and photoconductors with more stable performance in repeated use can be obtained. become.
実施例1 感光体の基体としての直径80mmの円筒形アルミニウム
合金素管を外表面を砥石またはバイトで加工して、中心
線平均粗さRaが0.7μm,うねりが0.35μm,表面凹凸の平
均間隔Smが30μmの表面としたのち、トリクレンで脱脂
し、続いて、表面酸化処理として温度90℃の純水中で15
分間煮沸してアルミニウム酸化膜を形成した。この基体
を真空蒸着装置の回転支持軸に装着し、基体温度を54℃
として回転させながら、真空槽のベルジャー温度を40℃
に保ち、2〜4×10-5Torrの真空中で、基体上に純セレ
ンからなる膜厚48μmのキャリア輸送層,42重量%のテ
ルルを含むセレン・テルル合金からなる膜厚0.15μmの
キャリア発生層,3重量%のひ素を含むセレン・ひ素合金
からなる膜厚2μmの表面保護層を順次真空蒸着して感
光体とする。このようにして30本の感光体を作製した。Example 1 An outer surface of a cylindrical aluminum alloy tube having a diameter of 80 mm as a substrate of a photoreceptor was processed with a grindstone or a cutting tool, and the center line average roughness Ra was 0.7 μm, waviness was 0.35 μm, and average distance between surface irregularities. After the surface of Sm is 30 μm, the surface is degreased with trichlene, followed by surface oxidation treatment in pure water at a temperature of 90 ° C. for 15 minutes.
The mixture was boiled for minutes to form an aluminum oxide film. This substrate was mounted on a rotating support shaft of a vacuum evaporation apparatus, and the substrate temperature was set to 54 ° C.
While rotating, the bell jar temperature of the vacuum chamber is set to 40 ° C.
In a vacuum of 2 to 4 × 10 -5 Torr, a carrier transport layer made of pure selenium having a thickness of 48 μm and a carrier having a thickness of 0.15 μm made of selenium-tellurium alloy containing 42% by weight of tellurium are placed in a vacuum at 2 to 4 × 10 -5 Torr. A generating layer and a surface protective layer of 2 μm in thickness made of a selenium-arsenic alloy containing 3% by weight of arsenic are sequentially vacuum-deposited to obtain a photoconductor. Thus, 30 photoconductors were produced.
第1図は、この実施例の方法で作製した感光体の模式
的断面図であり、アルミニウム合金からなる基体1の表
面にアルミニウム酸化膜2が形成されており、その上
に、キャリア輸送層3,キャリア発生層4,表面保護層5が
順次設けられている。FIG. 1 is a schematic cross-sectional view of a photoreceptor manufactured by the method of this embodiment, in which an aluminum oxide film 2 is formed on a surface of a base 1 made of an aluminum alloy, and a carrier transport layer 3 is formed thereon. , A carrier generation layer 4 and a surface protection layer 5 are sequentially provided.
実施例2 キャリア発生層の蒸着材料として40重量%のテルルを
含むセレン・テルル合金を用いたこと以外は実施例1と
同様にして、30本の感光体を作製した。Example 2 Thirty photoconductors were produced in the same manner as in Example 1, except that a selenium-tellurium alloy containing 40% by weight of tellurium was used as a vapor deposition material for the carrier generation layer.
比較例1〜4 比較のために、基体の表面酸化処理の方法を次のよう
に変え、その他は実施例1と同様にして比較例1〜4の
感光体を各30本ずつ作製した。Comparative Examples 1 to 30 For comparison, 30 photoconductors of Comparative Examples 1 to 4 were manufactured in the same manner as in Example 1 except that the method of surface oxidation treatment of the substrate was changed as follows.
比較例1 酸化処理なし 比較例2 150℃,36分間加熱 比較例3 250℃,36分間加熱 比較例4 硝酸(31.3%)に20分間浸漬後、250℃,36分
間加熱 このようにして作製した実施例,比較例の感光体につ
いて、波長780nmの単色光による感度(半減衰露光量)
を測定した。また、基体と感光層との密着性を粘着テー
プによる剥離テストで相対比較した(数字が大きい程密
着強度が高い)。さらに、各感光体と同様に表面酸化処
理した同一バッチの各基体の表面をX線電子分光法(ES
CA)で分析し、アルミニウム酸化物とアルミニウム金属
との放出電子の強度比(酸化度:Alox/Almetall)と酸化
膜の膜厚および形態とを調べた。Comparative Example 1 No oxidation treatment Comparative Example 2 Heated at 150 ° C for 36 minutes Comparative Example 3 Heated at 250 ° C for 36 minutes Comparative Example 4 Dipped in nitric acid (31.3%) for 20 minutes and then heated at 250 ° C for 36 minutes Sensitivity of the photoconductors of Examples and Comparative Examples by monochromatic light having a wavelength of 780 nm (half-attenuation exposure)
Was measured. Further, the adhesion between the substrate and the photosensitive layer was relatively compared by a peeling test using an adhesive tape (the larger the number, the higher the adhesion strength). Furthermore, the surface of each substrate of the same batch subjected to surface oxidation treatment in the same manner as each photoconductor was subjected to X-ray electron spectroscopy (ES
CA), the intensity ratio of emitted electrons between aluminum oxide and aluminum metal (degree of oxidation: Alox / Almetall) and the thickness and morphology of the oxide film were examined.
また、これらの感光体について、第3図に概念図を示
したレーザプリンタプロセスと同等の評価プロセスで繰
り返し作用における疲労,暗減衰を測定し繰り返し特性
として評価した。第3図において、11は感光体,12は感
光体表面帯電用の帯電器,13は波長780nmのレーザ光,14
は現像器,15は転写用の帯電器,16は紙分離用の帯電器,1
7は除電光源である。これらはドラム状の感光体11の中
心軸に対して図示の配設中心角となるように配置されて
いる。感光体表面帯電用の帯電器12はスコロトロンを使
用、転写帯電はDC5.2kV、紙分離帯電はAC4.2kV,500Hz
(最大振幅)で行い、除電はNeランプを使用した。この
ような評価プロセスで、感光体11を矢印Aの方向に回転
させながら帯電,露光などのプロセスを繰り返し、繰り
返し250サイクル後の疲労と暗減衰とを測定した。疲労
は初期表面帯電位に対する電位低下、暗減衰は表面帯電
後1秒後の電位保持率である。Further, with respect to these photoreceptors, fatigue and dark decay in repeated action were measured by an evaluation process equivalent to the laser printer process shown in the conceptual diagram of FIG. 3, and evaluated as repetition characteristics. In FIG. 3, reference numeral 11 denotes a photoconductor, 12 denotes a charger for charging the photoconductor surface, 13 denotes a laser beam having a wavelength of 780 nm,
Is a developer, 15 is a charger for transfer, 16 is a charger for separating paper, 1
Reference numeral 7 denotes a static elimination light source. These are arranged so as to have the arrangement central angle shown in the drawing with respect to the central axis of the drum-shaped photoconductor 11. The charger 12 for charging the photoreceptor surface uses a scorotron, DC5.2kV for transfer charging, AC4.2kV, 500Hz for paper separation charging
(Maximum amplitude), and neutralization was performed using a Ne lamp. In such an evaluation process, processes such as charging and exposure were repeated while rotating the photoconductor 11 in the direction of arrow A, and fatigue and dark decay after 250 cycles were measured. Fatigue is a decrease in potential with respect to the initial surface charge level, and dark decay is a potential retention rate one second after surface charge.
以上の調査および測定結果を第1表に示す。 Table 1 shows the results of the above surveys and measurements.
第1図の形態のOHは、ESCA分析でOH基が認められたこ
とを示す。 The OH in the form of FIG. 1 indicates that an OH group was recognized by ESCA analysis.
また、第2図は、キャリア発生層として同じ42重量%
のテルルを含むセレン・テルル合金を用い、膜厚も同じ
く0.15μmとした実施例1,比較例1〜4の各感光体の感
度(平均値)と基体表面酸化度との関係を示した図であ
る。FIG. 2 shows the same 42% by weight as the carrier generation layer.
FIG. 5 is a graph showing the relationship between the sensitivity (average value) of each photoconductor of Examples 1 and Comparative Examples 1 to 4 and the degree of oxidation of the surface of a substrate using a selenium-tellurium alloy containing tellurium and having a film thickness of 0.15 μm. It is.
第1表および第2図から、実施例1の感光体は比較例
1〜4の各感光体よりも感度が向上しており、しかも繰
り返し特性の疲労,暗減衰特性も改善されていることが
判るが、第2図に見られるとおり、基体表面酸化度の大
きさと感度とはあまり直接的に密接な関係は認められ
ず、また、第1表に見られるとおり、酸化膜の膜厚や形
態からも感度,繰り返し特性の向上を適切に説明できな
い。しかしながら、基体を純水中で煮沸して酸化膜を形
成し、特にESCA分析による酸化度を3.50以上とすること
が、感光体の感度および繰り返し特性の向上に必要であ
り、しかも極めて有効であることは明らかである。From Table 1 and FIG. 2, it can be seen that the photoreceptor of Example 1 has higher sensitivity than the photoreceptors of Comparative Examples 1 to 4, and that the repetition characteristics of fatigue and dark decay characteristics are also improved. As can be seen, as shown in FIG. 2, there is no direct relationship between the degree of oxidation of the substrate surface and the sensitivity, and as shown in Table 1, the thickness and morphology of the oxide film Therefore, the improvement of sensitivity and repetition characteristics cannot be properly explained. However, it is necessary to improve the sensitivity and repetition characteristics of the photoreceptor, and it is extremely effective that the substrate is boiled in pure water to form an oxide film, and that the degree of oxidation by ESCA analysis is particularly 3.50 or more. It is clear.
さらにまた、第1表における実施例2,比較例1〜4の
各感光体の結果より、感度を同一レベルでよいとすれ
ば、純水中で煮沸して酸化膜を形成した基体を用いれ
ば、キャリア発生層に用いるセレン・テルル合金のテル
ル濃度を低減することができ、繰り返し特性を大幅に向
上させることが可能であることが判る。Furthermore, based on the results of the photoreceptors of Example 2 and Comparative Examples 1 to 4 in Table 1, if the sensitivity can be at the same level, it is possible to use a substrate having an oxide film formed by boiling in pure water. It can be seen that the tellurium concentration of the selenium-tellurium alloy used for the carrier generation layer can be reduced, and the repetition characteristics can be greatly improved.
また、このような煮沸処理を行うことにより、第1表
に見られるように、基体と感光層との密着性も改善され
ており、感光体の信頼性の向上の点でも有効である。Further, by performing such a boiling treatment, as shown in Table 1, the adhesion between the substrate and the photosensitive layer is also improved, which is effective in improving the reliability of the photoreceptor.
この発明によれば、アルミニウムを主成分とする材料
からなる基体の表面を、ESCA分析による酸化度が3.50以
上のアルミニウムの酸化膜が生じるように純水中で煮沸
したのち、この基体上に純セレンからなる電荷輸送層と
40〜42重量%のテルルを含むセレン・テルル合金からな
るキャリア発生層とを含む感光層を形成することによ
り、キャリア発生層を形成するセレン・テルル合金のテ
ルル濃度を高くしたりキャリア発生層の膜厚を厚くした
りすることなしに、感光体の感度を向上させることがで
き、しかも、繰り返し使用における暗減衰,疲労も低減
することが可能となる。また、感光体の感度を低下させ
ることなしに、キャリア発生層のテルル濃度を低減した
り、その膜厚を薄くしたりすることができ、繰り返し使
用における暗減衰,疲労を大幅に改善することが可能と
なる。According to the present invention, the surface of a substrate made of a material containing aluminum as a main component is boiled in pure water so as to form an aluminum oxide film having a degree of oxidation of 3.50 or more by ESCA analysis, and then the pure surface is formed on the substrate. A charge transport layer made of selenium;
By forming a photosensitive layer including a carrier generation layer made of a selenium-tellurium alloy containing 40 to 42% by weight of tellurium, the tellurium concentration of the selenium-tellurium alloy forming the carrier generation layer can be increased, The sensitivity of the photoreceptor can be improved without increasing the film thickness, and dark decay and fatigue in repeated use can be reduced. In addition, the tellurium concentration of the carrier generation layer can be reduced or the thickness thereof can be reduced without lowering the sensitivity of the photoreceptor, thereby greatly improving dark attenuation and fatigue in repeated use. It becomes possible.
かくして、キャリア注入部あるいはトラップ層を設け
る感光層構成を採ることなく、高感度で、暗減衰,疲労
の少なく、安定した性能の感光体を容易に製造すること
ができ、例えば、レーザプリンタのような長波長光を露
光光源とする電子写真装置にも好適に用いられる感光体
を提供することが可能となる。Thus, a photosensitive member having high sensitivity, low dark decay, little fatigue, and stable performance can be easily manufactured without employing a photosensitive layer configuration having a carrier injection portion or a trap layer. It is possible to provide a photoreceptor that is suitably used for an electrophotographic apparatus using an exposing light source of a long wavelength light.
また、基体と感光層との密着性が改善され、感光体の
信頼性が向上する効果も得られる。Further, the adhesion between the substrate and the photosensitive layer is improved, and the effect of improving the reliability of the photoconductor is also obtained.
第1図はこの発明の実施例の方法で作製した感光体の模
式的断面図、第2図は感光体の感度と基体表面酸化度と
の関係を示すプロット図、第3図は、感光体の繰り返し
特性の評価プロセスを示す概念図である。 1……基体、2……アルミニウム酸化膜、3……キャリ
ア輸送層、4……キャリア発生層、5……表面保護層。FIG. 1 is a schematic cross-sectional view of a photoreceptor manufactured by the method of the embodiment of the present invention, FIG. 2 is a plot showing the relationship between the sensitivity of the photoreceptor and the degree of oxidation of the substrate surface, and FIG. It is a conceptual diagram which shows the evaluation process of the repetition characteristic of. DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Aluminum oxide film, 3 ... Carrier transport layer, 4 ... Carrier generation layer, 5 ... Surface protective layer.
Claims (1)
基体の表面を、ESCA分析による酸化度が3.50以上のアル
ミニウムの酸化膜が生じるように純水中で煮沸したの
ち、この基体上に純セレンからなる電荷輸送層と40〜42
重量%のテルルを含むセレン・テルル合金からなるキャ
リア発生層とを含む感光層を形成することを特徴とする
電子写真用感光体の製造方法。1. A surface of a substrate made of a material containing aluminum as a main component is boiled in pure water so as to form an aluminum oxide film having an oxidation degree of 3.50 or more by ESCA analysis. Charge transport layer comprising 40 to 42
A method of manufacturing a photoconductor for electrophotography, comprising forming a photosensitive layer including a carrier generation layer made of a selenium-tellurium alloy containing tellurium by weight.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-325169 | 1988-12-23 | ||
JP32516988 | 1988-12-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02282266A JPH02282266A (en) | 1990-11-19 |
JP2638185B2 true JP2638185B2 (en) | 1997-08-06 |
Family
ID=18173782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1053283A Expired - Lifetime JP2638185B2 (en) | 1988-12-23 | 1989-03-06 | Manufacturing method of photoreceptor for electrophotography |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2638185B2 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4123267A (en) * | 1977-06-27 | 1978-10-31 | Minnesota Mining And Manufacturing Company | Photoconductive element having a barrier layer of aluminum hydroxyoxide |
JPS57147644A (en) * | 1981-03-10 | 1982-09-11 | Ricoh Co Ltd | Photoreceptor for electrophotography |
JPS61278858A (en) * | 1985-06-04 | 1986-12-09 | Fuji Electric Co Ltd | Selenium photoreceptor for electrophotography |
JPS6452165A (en) * | 1987-08-22 | 1989-02-28 | Fuji Electric Co Ltd | Electrophotographic sensitive body |
-
1989
- 1989-03-06 JP JP1053283A patent/JP2638185B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH02282266A (en) | 1990-11-19 |
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