JP2628064B2 - Object processing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an apparatus for processing an object to be processed.

(Prior Art) Conventionally, in semiconductor wafer processing, in order to perform fine selective processing, first, an image of a reticle (photomask) having a pattern indicating a processed portion is transferred to a resist applied on the wafer, This creates a mask layer on the wafer surface, and if necessary, transfers this resist image to a film of a material with even better heat and corrosion resistance, such as a SiO ₂ film, and then collectively performs chemical or physical Alternatively, a process (for example, oxidation, annealing, doping, film formation, etc.) having both elements is performed, and further, a method of removing an unnecessary resist or a mask layer such as SiO ₂ is used.

The large number of steps is mainly due to the fact that various processing apparatuses do not have a fine position selectivity. That is, if there is a processing apparatus having a fine position selectivity corresponding to the processing accuracy of the VLSI pattern, it is possible to omit the step of forming a mask layer indicating a processing portion on a wafer. One method is to use a narrow beam (EB,
Laser or the like) has been considered. In this method, a thin beam is used to selectively cause photochemical or photothermal reactions on the surface of a wafer previously placed in a gas atmosphere or the like necessary for processing, thereby performing direct wafer processing. It is.

(Problems to be Solved by the Invention) However, when a thin beam is used, the processing is inevitably performed as a line drawing by raster or vector sweep. However, there is a problem that compatibility with an excimer laser or the like, which is a high-power pulse light source, is poor. For example, an excimer laser has a pulse width of about 100 nS with respect to a pulse period of 10 mS, and when scanned, it becomes a discrete point and scanning as a line drawing is difficult.

An object of the present invention is to provide an apparatus for selectively and directly processing an object to be processed, which eliminates the step of transferring a pattern to a resist using a photomask such as a reticle, and improves the throughput.

[Configuration of the invention]

(Means for Solving the Problems) According to claim 1, a reaction chamber that covers the surface of the object to be processed is provided in the chamber, and this reaction chamber is partitioned into a reaction space and an exhaust space by a partition plate, and the reaction is performed. A gap is formed between a lower end of the chamber and a processing surface of the object to be processed, and a gas supply unit that supplies a predetermined processing gas to a reaction space of the reaction chamber, and an atmosphere in the exhaust space is exhausted. Exhaust means, comprising a projection optical system that forms an optical pattern of light of 1 J / cm ² / pulse or more on the processing surface of the object to be processed,
An object processing apparatus is provided.

In the apparatus for processing an object to be processed according to the first aspect, as described in the second aspect, a gap sensor that detects an interval between the gaps may be provided.

According to the third aspect, a gas supply for introducing a predetermined processing gas into the processing chamber, and a projection for imaging an optical pattern of light of 1 J / cm ² / pulse or more on a processing target disposed in the processing chamber. An object processing apparatus is provided, comprising: an optical system; and an exhaust unit arranged around a projection area of the object on which the optical pattern is projected and configured to perform multiple exhausts on concentric circles. You.

(Operation) According to the processing apparatus of the object to be processed according to the first aspect, since the reaction chamber that covers the surface of the object to be processed is further provided in the chamber, the consumption of the processing gas is reduced by reducing the size of the reaction chamber. Can be reduced. Further, since the processing gas introduced into the reaction chamber in this manner is exhausted from the exhaust space by the exhaust means, the processing gas does not leak out and is safe. Further, no outside air enters the reaction chamber.

According to the processing apparatus of the object to be processed according to the second aspect, the gap interval can be detected by the gap sensor, so that it is easy to control the gap interval, and the pressure in the reaction space is set to a desired value. Be able to control.

Further, according to the apparatus for processing an object to be processed according to the third aspect, the safety is further improved by the exhaust means arranged around the projection area and performing multiple exhausts concentrically.

(Embodiment) Hereinafter, an embodiment in which the processing apparatus of the present invention is applied to a laser doping apparatus in a semiconductor manufacturing process will be described with reference to the drawings.

A light source (1) is provided so as to selectively project light on a target object to perform doping processing. This light source (1)
For example, an excimer laser or the like is used, the oscillation may be continuous or pulsed, and the wavelength may be the absorption wavelength of the object to be processed and, if a photochemical reaction is caused in the gas, The output may vary depending on conditions, for example, about 1 J / cm ² / pulse is required.

A beam shaper (3) is provided so that the beam (2) emitted from the light source (1) can be adjusted. The beam shaper (3) adjusts the size of the beam (2) and is shaped so that the intensity distribution becomes uniform. The beam shaper (3) turns the beam (2) into a shaped beam (4). .
That is, when the excimer laser is used, the intensity distribution of the excimer laser has a rectangular spread and is distributed in a Gaussian distribution along each side. A waveform beam (4) having a desired size is formed by using two sets of orthogonal parallel beam forming cylindrical lenses and light distribution uniforming fly-eye lenses.

A photomask (5) having a processing pattern so as to form a patterned light image from the molded beam (4) is provided. The photomask (5) has a pattern of an unprocessed portion made of a material that does not transmit the forming beam (4), such as a thin film of chromium, on an optical material that transmits the forming beam (4), such as quartz. Is formed. A plurality of photomasks (5) having such a configuration are managed by, for example, a mask exchanger (6) including a clean mask storage mechanism and a mask exchange mechanism (not shown) provided near the photomask (5). The photomask (5) necessary for each process is automatically loaded.

The light beam of the shaped beam (4) passes through the photomask (5) and is formed on the optical path of the shaped beam (4) so that an image of the patterned light of the shaped beam (4) can be formed on an object to be processed, for example, a semiconductor wafer (7). For example, a projection optical system (8) using a lens such as quartz is provided. That is, the pattern of the photomask (5) is projected on the surface of the semiconductor wafer (7) by the light source (1), the beam shaper (3), and the projection optical system (8). I have.

In the transmission optical path of the projection optical system (8), the chamber (11) is formed so as to form an image of the patterned light on the semiconductor wafer (7) housed in the cylindrical chamber (11). On the wall surface, for example, a circular window (9) made of quartz is provided in an airtight manner.

The semiconductor wafer (7) is held and set on a positioning stage (10) capable of adjusting the position in the XYZ directions. The stage (10) is made of, for example, anodized aluminum. That is, the chamber (11) is configured to dope the semiconductor wafer (7).

Also, a desired processing gas used for the doping process, for example,
A gas supply (12) that can supply Ar gas or the like containing about 10% PH ₃ at a desired flow rate and can supply the desired pressure, for example, about 100 to 500 Torr, inside the chamber (11). An exhaust decompressor (13) constituted by a rotary pump capable of exhausting gas (for example, an oil diffusion pump or a turbo molecular pump may be used if a lower pressure is required) is provided in the chamber (11). Connected and installed. Then, these chamber (11), window (9) and gas supply (1
2) and the exhaust pressure reducer (13) form means for setting at least the region where the projected light is incident as a predetermined gas region. In addition, a rectangular opening / closing transfer port (14) such as a gate valve is provided on the side wall of the chamber (11) so that the semiconductor wafer (7) can be loaded and unloaded into the chamber (11). An airtight aluminum load lock chamber (15) having a transfer mechanism and an opening / closing mechanism (not shown) is provided inside the load lock chamber (15). The load lock chamber (15) and the transfer port ( The semiconductor wafer (7) can be taken in and out without returning the chamber (11) to the atmospheric pressure by the transfer mechanism (14) and the load lock chamber (15) (not shown), and the chamber (11) is evacuated. Pressure reducer (13)
Thus, a desired pressure can be obtained in a short period of time and dust can be kept small and clean.

Here, the optical system from the light source (1) to the semiconductor wafer (7), that is, the beam shaper (3), the photomask (5), and the projection optical system (8) transmit light to be used as much as possible (in the case of a mirror, Although it is made of a material that reflects (eg, quartz), its transmittance is finite, and a part of the power of the beam (2) and the shaping beam (4) is converted into heat in the optical component and the temperature of the optical component is changed. Will rise. This rise in temperature not only causes damage to the optical components but also causes distortion even if it does not lead to damage, and it is necessary to perform temperature management to deteriorate the projection accuracy of the pattern projected on the semiconductor wafer (7). The optical system cooler (16) is provided so as to be able to supply, for example, cooling air to the beam shaper (3), the photomask (5) and the projection optical system (8) as shown by an arrow (17) so as to perform this function. ing. As shown in FIG. 1, if the optical path of the shaped beam (4) is bent, for example, by 90 ° via the reflecting mirror (18), the apparatus can be made compact. In addition, the positioning stage (10) can hold the semiconductor wafer (7) by a suction mechanism (not shown), for example, vacuum suction or electrostatic suction, so that the device pattern on the semiconductor wafer (7) and the patterned beam ( 4) and because it requires a consistent i.e. fine positioning in order to alignment, positioning stage (10), for example a plane three-axis (X, Y, theta ₁ direction) perpendicular uniaxial (Z-direction) and a tilt adjusting And a six-axis stage having _two rotation axes (θ ₂ and θ ₃ directions). Further, a portion for holding the semiconductor wafer (7) of the positioning stage (10) has a built-in temperature control mechanism (not shown) for cooling or heating the semiconductor wafer (7) to a desired temperature as required.

In addition, through-the-lens, which performs high-precision position detection through the main lens of the projection optical system (8) so that the positional relationship between the semiconductor wafer (7) and the photomask (5) can be detected.
An alignment detector (20) using a lens (TTL) type measurement beam (19) is provided, and position information detected by the alignment detector (20) is sent to a control unit (not shown). Positioning stage (1
0) can be controlled. The positioning stage (10) and the alignment detector (20)
Means for adjusting the position of the pattern of the semiconductor wafer (7) and the pattern of the photomask (5) relative to each other are formed.

Further, this laser doping apparatus may be mounted on a vibration isolating table using an air spring or the like in order to avoid erroneous processing due to external vibration. The operation and setting of the laser doping apparatus having the above configuration are controlled by a control unit (not shown).
As described above, an apparatus that performs processing by directly using the light image of the pattern that defines the processing region on the held target object is configured.

Next, a method of doping a semiconductor wafer by the above-described apparatus will be described.

First, a semiconductor wafer (7) to be processed is transferred via a transfer mechanism (not shown) and a transfer port (14) of the load lock chamber (15).
Is held on the positioning stage (10) in the chamber (11). Here, in general, when the positioning stage (10) is made to have a high precision, the adjustment range of the rotation direction in the XY plane of the semiconductor wafer (7) is limited. In many cases, a pre-alignment mechanism is used in which the attitude in the inner rotation direction is determined to some extent. However, in this embodiment, it is similarly desirable to have the pre-alignment mechanism inside or outside the load lock chamber (15). Then, the temperature of the semiconductor wafer (7) is controlled to a desired temperature by a temperature control mechanism (not shown) built in the positioning stage (10).

On the other hand, when the semiconductor wafer (7) is transferred from the load lock chamber (15) to the positioning stage (10), the inside of the chamber (11) is kept for safety so that harmful gas used for processing is not released to the outside. it is desirable to purge with N ₂ and the like.

Next, the semiconductor wafer (7) held on the positioning stage (10) is first adjusted with the positioning stage (10) and the alignment detector (20) in order to match the coordinate system of the semiconductor wafer (7) with the coordinate system of the apparatus. Using semiconductor wafer (7)
Of alignment. This operation is based on the through-the-lens alignment detector (2
0) or another alignment detection method that does not involve the projection optical system (8).

On the other hand, a desired photomask (5) is selectively loaded by the mask exchanger (6), and the posture of the photomask (5) is aligned with the apparatus coordinates by the mask exchanger (6).

On the other hand, the interior of the chamber (11) is controlled to a desired pressure, for example, 100 Torr by the gas supply device (12) and the exhaust pressure reducing device (13).
A processing gas atmosphere having a desired composition of about 500 Torr, for example, PH ₃
The atmosphere is 10% and Ar is 90%, and at least the surface of the semiconductor wafer (7) is exposed to the processing gas.

During setting of these conditions, the light source (1) is in an extinguished state. When the condition setting is completed, the positioning stage (10) is moved to position the semiconductor wafer (7) at the doping processing position, that is, the desired doping processing position of the semiconductor device. Fine adjustment (over the required degree of freedom of the six degrees of freedom of position and rotation) using the alignment detector (20) every time to achieve die-by-die alignment. By the way, the light source (1) is pulse-oscillated, for example, and the semiconductor wafer (7) is irradiated with the beam (2). At this time, the alignment detector (20) may have an automatic focus detection function of the projection optical system (8). And
The beam (2) emitted from the light source (1) was converted into a desired shaped beam (4) optimal for doping processing by a beam shaper (3), and was patterned via a reflecting mirror (18) and a photomask (5). A light image is formed, and this light image is formed on a semiconductor wafer (7) held on a positioning stage (10) through a projection optical system (8) and a window (9) of a chamber (11). A desired position of the semiconductor wafer (7) is subjected to doping processing by the light image projected on the semiconductor wafer (7) and the gas atmosphere in the chamber (11). At this time, the beam forming unit (3), the photomask (5), and the projection optical system (8) have already been cooled to desired temperatures by the cooling air of the optical system cooler (16) as shown by the arrow (17). Here, the processing amount of the doping process is controlled by a control unit (not shown) based on the power per pulse of the light source (1) and the number of pulses. Thereafter, the positioning stage (10) is moved in the same manner, and iteratively repeats (step and repeat) to a desired position of all the semiconductor elements on the semiconductor wafer (7).
Perform processing. When a different process such as annealing, CVD, etching, or oxidation is performed on the semiconductor wafer (7) after this process, the photomask (5) and the gas used for the process are changed. A desired position may be repeatedly processed. When all the processes are completed, the inside of the chamber (11) is purged with N ₂ or the like, and the processed semiconductor wafer (7) is removed from the load lock chamber (15) through the load lock chamber (15) and the transfer port (14). It is taken out by a transport mechanism (not shown), and the process ends. Thus, the semiconductor wafer (7) is formed by the photomask (5) having a pattern.
A desired portion of the surface to be processed can be selectively and directly doped, so that a resist processing step usually used in a semiconductor manufacturing process or the like, that is, a photoresist transfer step by a photolithography process is not required, and processing in the semiconductor manufacturing process is not required. Accuracy can be improved, and the yield, especially in highly integrated circuits, is greatly improved. In addition, there is an effect that the manufacturing cost can be reduced. In addition, since the processing can be performed simultaneously as a surface instead of a method of sweeping a thin beam or the like, the throughput can be improved.

Since the capability of the high-output light source (1), for example, an excimer laser or the like can be sufficiently used, compatibility between the light source (1) and the processing content can be improved. In addition, since selective processing can be performed over a plurality of steps without using a resist, the number of steps can be significantly reduced, and high cleanliness can be maintained.

Here, in general, a wafer stepper or the like that performs processing such as reduction projection exposure of a photomask image on a resist has an area of an integral multiple of a die, such as one or more dies being exposed one time. .

Similarly, the laser doping apparatus of this embodiment can simultaneously process a region of an integral multiple of the die. However, if the output of the light source (1) is not always enough to process an area that is an integral multiple of the die, it is possible to process one die by dividing it into plural times. That is, one die is divided into several parts, and one photomask (5) is prepared for each of the divided areas. By doing so, the power required for the desired processing from the same light source (1) (the minimum power required for one pulse application to perform the processing. Unit J /
Expressed in cm ² / pulse. ) Can be obtained. For example, in the case of CMOS channel doping, when one die is divided into four, four photomasks (5) for P-channel and four photomasks for N-channel are prepared, and P-channel processing is performed for P-channel processing. dopant gas, e.g., B ₂ H ₆ or the like, N to channel processing N-channel dopant gas for example AsH ₃
Or by performing the process at 8 photomasks while switching the gas so as PH _3, etc. (5), the same chamber without using a resist P, and formation of N each channel (1
In 1), a series of doping processes can be performed. In this case, the pattern of the photomask (5) for each of the P and N channels has a processing region which is a discrete region having a size (for example, several μm square) of each of the P and N MOS transistors, for example, a rectangular shape. Therefore, the MO at the boundary of the divided area
An area where the photomasks overlap each other is provided so that the pattern for the S transistor is not divided into two photomasks, and the pattern for each MOS transistor is divided into any one of the photomasks (5) without division. In this case, the connecting process of the connecting portions can be facilitated. The doping of the channel region is several times (more than 5 times) the design rule.
The projection optical system (8) does not necessarily need to have the resolution of the design rule because the rectangular area having the dimensions is processed and the arrangement is separated from the element isolation region which is several times the minimum design rule. The accuracy is good enough not to protrude from the element isolation region, and the cost of the apparatus is reduced.

In this doping apparatus, as shown in FIG. 2, a quartz circular window (25) for introducing a light image of a patterned shaped beam (4) onto a positioning stage (10) in a chamber (11). For example, a reaction chamber (26) having a cylindrical shape made of aluminum and having a semiconductor wafer side opened is provided. The reaction chamber (26) is provided with, for example, one supply port (27) connected to the gas supply device (12) and, for example, two exhaust ports (28) connected to the exhaust pressure reducer (13). The inside of the reaction chamber (26) is formed with a reaction space (30) and an exhaust space (31) by an annular partition (29). At the end of the partition (29) on the open side of the reaction chamber (26), for example, a gap sensor (32) of a capacitance detection type for detecting the interval between the semiconductor wafer (7) and the partition (29) is provided. Have been. A reaction chamber (26) for performing a doping process is disposed above the semiconductor wafer (7), and a minimum necessary portion is formed at a portion where processing by a light image of the patterned shaping beam (4) is performed. It can be a window (25) and a reaction space (30). The reaction space (30) has a supply port (27) and an exhaust port (2
By 8) via a connecting gas supply (12) and the exhaust pressure reducer (13), a pressure of about 100~500Torr processing sites in the desired gaseous example PH ₃ or B ₂ H ₆ of the semiconductor wafer (7) Environment. The treated gas is mainly exhausted by an exhaust pressure reducer (13) connected to the reaction chamber (26) via an exhaust port (28). This is because an extremely small gap (for example, several μm to several tens μm) is formed between the end of the partition plate (9) and the semiconductor wafer (7) so that the pressure in the reaction space (30) of the reaction chamber (26) is maintained. In order to keep the gap, the gap is detected by the gap sensor (32) and the positioning is controlled by moving the positioning stage (10) and the reaction chamber (26) relative to each other according to a command from a control unit (not shown). The control of the gap may be performed by moving the reaction chamber (26). Further, a well-known capacitance detection type gap sensor may be used as the gap sensor (32). In addition, the use of three or more gap sensors (32) may make it possible to perform the tilt adjustment. Further, on the outer periphery of the reaction chamber (26), there is an exhaust space (31) connected to the exhaust pressure reducer (13) via the exhaust port (28). The pressure in the exhaust space (31) is always kept lower than the inside of the reaction chamber space (30) and the chamber (11) by the exhaust pressure reducer (13), and the inside and outside air of the chamber (11) flows into the reaction chamber (26). Control is performed so that the gas (generally toxic) in the reaction chamber (26) does not flow out of the chamber (11). Exhaust space if necessary (31)
It is possible to enhance the safety by providing multiple concentric circles. Therefore, in order to further ensure safety, it is only necessary to use the chamber (11) as described above. In this case, the chamber (11) does not necessarily need to be hermetically sealed, and the inside of the chamber (11) is always exhausted ( Only weakly decompressed) and prepared for the case of gas outflow from the gap between the semiconductor wafer (7) and the reaction chamber (26). If the gas is not toxic and does not require much safety, The chamber (11) is not necessary, and the chamber (11) can be omitted, and the positioning stage (10) and the surface of the semiconductor wafer (7) other than the surface facing the reaction chamber (26) can be exposed to the atmosphere. Then, the reaction chamber (26) and the positioning stage (1) at least the area to be projected is set as a predetermined gas area.
The semiconductor wafer (7) gripped by the (0) is moved by the positioning stage (10) to perform doping.
It is sufficient that the processing can be performed while the relative movement of the positioning stage (10) and the positioning stage (10) is relatively repeated.

With such a configuration, a simple method such as a vacuum chuck can be used for gripping the semiconductor wafer (7). Further, the load lock chamber (15) for transferring between the semiconductor wafer (7), the atmosphere, and the inside of the chamber (11) becomes unnecessary, so that the cost and the throughput are improved. In addition, since the reaction chamber (26) can be made smaller, the gas consumption can be reduced.
There are advantages such as easy control of the air flow and pressure in the reaction chamber (26).

In the above-described embodiment, the configuration has been described in which the light source of the laser, the beam shaper, and the projection optical system project a light image onto a semiconductor wafer via a photomask and perform processing.
Other configurations may be used as long as an image of light can be projected onto the object to be processed through a photomask having a pattern. The light source is not limited to a laser, and is not limited to the above embodiment.

In the above embodiment, the region where light is projected by the chamber, the window, the gas supply device, and the exhaust pressure reducer, or the reaction chamber, the gas supply device, and the exhaust pressure reducer is described as a predetermined gas region. It is sufficient that the region into which the light is incident is a predetermined gas region. Naturally, various methods can be considered in addition to the above embodiment, and the present invention is not limited to the above embodiment.

Moreover, in the above embodiment, the position is adjusted so that the semiconductor wafer is moved by the positioning stage and the alignment detector to match the pattern of the photomask.
Any method can be used as long as the position of the pattern of the object to be processed and the pattern of the photomask can be adjusted relative to each other. For example, the position of the object to be processed and the optical system may be adjusted by moving the entire optical system or the photomask. It goes without saying that the position adjustment may be performed by moving the entire object or both the object and the photomask.

In the above embodiment, the laser doping apparatus for performing the doping process in the semiconductor manufacturing process has been described. However, if the process can be performed by directly using the light image of the pattern that defines the processing region on the held processing target, For example, it may be used for an annealing process, a CVD process, an etching process, an oxidation process, or the like, and may be configured to perform a plurality of processes, and it is needless to say that the present invention is not limited to the above embodiment.

Next, an embodiment in which the object processing apparatus of the present invention is applied to a laser doping apparatus in a semiconductor manufacturing process will be described with reference to FIG.

The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description is omitted. The light source (1), the light beam (2), and the mirror (33) are actually to be arranged perpendicularly to the plane of the paper, but are turned downward by 90 ° for convenience of description.

The light beam (2) emitted from the light source (1) has its optical path bent by, for example, 90 ° by a movable mirror (33) that moves along the light beam (2), and enters the beam shaper (3). Is done. A photomask (5) is provided in the optical path of the shaped beam (4) adjusted by the beamformer (3), and the photomask (5) is used for processing by a mask exchanger (6). Is automatically filled.

The patterned shaped beam (4) that has passed through the photomask (5) passes through the reflecting mirror (18) and passes through the optical path, for example, 90 degrees.
{Circle around (4)} Bending upward, entering the projection optical system (8), and facing the semiconductor wafer (7).

The light source (1) is provided on a stage base (35), the mirror (33) is provided on an X stage (not shown) that moves one-dimensionally on the stage base (35), the beam former (3) and the reflecting mirror (18). ), The projection optical system (8), and the mask exchanger (6) are arranged on the stage base (35) and move in the Y direction along the X stage (not shown).
Each is attached to a positioning stage (34) that moves in the Y direction.

Further, plane rotation (theta ₁ direction) perpendicular uniaxial (Z direction)
A total of four rotation axes (θ ₂ , θ ₃ ) for tilt adjustment are provided in a chuck (36) described later.

Next, a window (9) made of, for example, quartz made of quartz is provided in the optical path near the upper part of the positioning stage (34), and the semiconductor wafer (7) is held inside with the processing surface facing downward. For example, an airtight chamber (3) made of anodized aluminum and having a chuck (36)
7) is provided. That is, the chamber (37) can form a patterned light image on the semiconductor wafer (7) held on the chuck (36) in the chamber (37) through the window (9). I have.

The chamber (37) is connected to a gas supply (12) capable of supplying a desired gas used for the doping process and an exhaust pressure reducer (13) capable of depressurizing and exhausting the inside of the chamber (37). Further, a transfer port (14) through which a semiconductor wafer (7) can be loaded and unloaded is provided on a side wall of the chamber (37).
A load lock chamber (15) is provided so as to be airtightly adjacent to the side wall, and the semiconductor wafer (7) is returned to the atmospheric pressure by a transfer mechanism (not shown) without returning the inside of the chamber (37) to atmospheric pressure.
It is configured to be able to take in and out.

Further, an optical system cooler (16) (not shown) for supplying cooling air, for example, to the beam shaper (3), the photomask (5), and the projection optical system (8) to cool the semiconductor wafer (7) is provided. ) the stage (36) for holding the θ ₁ θ ₂ θ
_A built-in mechanism for adjusting the ₃ and Z directions and a temperature control mechanism (not shown) for cooling or heating the semiconductor wafer (7) to a desired temperature as required.

The positioning stage (34) has an alignment detector (20) that performs high-precision position detection through a projection optical system (8) so that the positional relationship between the semiconductor wafer (7) and the photomask (5) can be detected. ) Is provided, and the position information detected by the alignment detector (20) is sent to a control unit (not shown) so that the positioning stage (34) and the chuck (36) can be controlled. And
The positioning stage (34), the chuck (36) and the alignment detector (20) allow the semiconductor wafer (7)
And means for relatively adjusting the position of the pattern of the photomask (5).

Further, this laser doping apparatus may be mounted on a vibration isolating table using an air spring or the like in order to avoid erroneous processing due to extraneous vibrations. Same as the example.

 Next, a doping method will be described.

The operation of the same portion as the embodiment shown in FIG. 1 is partially omitted or simply described.

First, the semiconductor wafer (7) to be processed is held on the stage (36) in the chamber (37) from the load lock chamber (15) via the transfer port (14). Then, the temperature of the semiconductor wafer (7) is controlled to a desired temperature.

Next, alignment is performed using the positioning stage (34), the chuck (36), and the alignment detector (20) to match the coordinate system of the semiconductor wafer (7) with the coordinate system of the apparatus.

On the other hand, the photomask (5) is selectively loaded, and the posture of the photomask (5) is aligned with the apparatus coordinates by the mask exchanger (6).

Next, after setting the inside of the chamber (37) to a desired pressure and gas atmosphere, the positioning stage (34) is moved to position the semiconductor device on the semiconductor wafer (7) at the doping processing position, that is, at the desired processing position. And the light source (1)
Is oscillated, for example, and a beam (2) is irradiated upward from the bottom toward the semiconductor wafer (7) to perform processing.

Other operations, configurations, effects, and the like are the same as those in the above-described embodiment, and thus description thereof is omitted here.

Note that, in this embodiment, X,
Since there is no drive mechanism with a large stroke where the drive unit such as Y is easily exposed, the airtightness of the chamber (37) can be configured high, so safety against gas systems is high, and dust generated by the mechanism in the chamber (37) is high. Occurrence is small.

In addition, since the holding process is performed with the processing surface of the semiconductor wafer (7) facing down, the adhesion of dust to the semiconductor wafer (7) can be reduced.

Further, the positioning stage (34) is not immersed in the gas, so that the reliability is improved and the cost of the positioning stage (34) can be reduced.

As described above, according to the embodiment, a light source for light processing used for light processing, a photomask for pattern projection having a pattern that defines a processing region, and light from the light source for light processing passed through the photomask are received. A projection optical system for projecting the object to be processed, a positioning device for holding the object to be processed and positioning it at a desired position, and a window having a window for introducing light passing through the projection optical system and allowing all or a part of the object to be processed to a predetermined A chamber for detecting the pressure and a predetermined gas, and a position detector for detecting a positional relationship between the photomask and the object to be processed,
The area that can be processed without moving the positioning device is a part of the object to be processed, and the processing is repeated while changing the relative position between the photomask and the object to be processed. That is, means for projecting an image of light on the object to be processed through a photomask having a pattern, and means for setting at least a region where light projected by this unit is incident as a predetermined gas region, Means for relatively adjusting the position of the pattern with the object to be processed, so that the surface to be processed of the object to be processed can be selectively used without raster or vector sweep without transferring the resist image to the object to be processed. Can cause photochemical or photothermal reaction, and can directly process the object to be processed.

〔The invention's effect〕

According to the present invention, the reaction chamber can be made as small as possible, so that the consumption of the processing gas can be reduced, which is extremely economical. Moreover, it is easy to control the air flow and pressure in the reaction chamber. Further, the processing gas in the reaction chamber is not leaked to the outside by the exhaust of the exhaust means, so that it is safe. Further, no outside air enters the reaction chamber. In particular, in the case of claim 2, it is easier to control the gap interval, and the pressure control is further simplified. And Claim 3
If the exhaust means for performing multiple exhausts is provided as described above, the safety is further improved.

[Brief description of the drawings]

FIG. 1 is a block diagram showing an embodiment in which the apparatus for processing an object to be processed of the present invention is applied to a laser doping apparatus, FIG. 2 is a block diagram showing a partially modified example of FIG. 1, and FIG. FIG. 11 is a configuration diagram illustrating another embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... Light source, 3 ... Beam shaper, 5 ... Photomask, 7 ... Semiconductor wafer, 8 ... Projection optical system, 10, 34 ... Positioning stage, 11, 37 ... Chamber, 12 ... Gas Feeder, 13 ... Exhaust pressure reducer, 20 ... Alignment detector, 26 ... Reaction chamber.

Claims (3)

(57) [Claims] 1. A reaction chamber for covering a surface of an object to be processed is provided in a chamber, the reaction chamber is partitioned into a reaction space and an exhaust space by a partition plate, and a lower end of the reaction chamber and a processing surface of the object to be processed. A gas supply unit for supplying a predetermined processing gas to the reaction space of the reaction chamber; an exhaust unit for exhausting an atmosphere in the exhaust space; and a processing surface of the object to be processed. And a projection optical system that forms an optical pattern of light of 1 J / cm ² / pulse or more. 2. The apparatus according to claim 1, further comprising a gap sensor for detecting an interval between the gaps. 3. A gas supply for introducing a predetermined processing gas into a processing chamber, and a projection optical system for forming an optical pattern of light of 1 J / cm ² / pulse or more on a processing object disposed in the processing chamber. Exhaust means disposed around a projection area of the object on which the optical pattern is projected and performing multiple exhausts on concentric circles.