JP2610624B2 - Optical displacement detector - Google Patents
Optical displacement detectorInfo
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- JP2610624B2 JP2610624B2 JP62213894A JP21389487A JP2610624B2 JP 2610624 B2 JP2610624 B2 JP 2610624B2 JP 62213894 A JP62213894 A JP 62213894A JP 21389487 A JP21389487 A JP 21389487A JP 2610624 B2 JP2610624 B2 JP 2610624B2
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、2つの部材の変位を光学的に検出する光学
式変位検出器に関する。Description: TECHNICAL FIELD The present invention relates to an optical displacement detector that optically detects displacement of two members.
一定ピッチの光学格子を有する測長または測角用のメ
インスケールと、このメインスケールの光学格子と対応
する光学格子を有する参照スケールとを相対変位可能に
対向配置し、これらのスケールを挟んで一方側に発光器
を、他方側に受光器をそれぞれ配置し、両スケールが相
対変位したとき、受光器によって複数相の検出信号(例
えば、Asinθ,Acosθ)を得、この検出信号を基に両ス
ケールの変位方向および変位量を検出する光学式変位検
出器が知られている。ここで、複数相の検出信号を得る
のは、相対変位方向の判別を行うため、および電気的な
補間パルスを得るためである。A main scale for length measurement or angle measurement having an optical grating of a fixed pitch, and a reference scale having an optical grating corresponding to the optical grating of the main scale are disposed to face each other so as to be relatively displaceable. A light-emitting device is placed on one side, and a light-receiving device is placed on the other side. When both scales are displaced relative to each other, detection signals of multiple phases (for example, Asinθ, Acosθ) are obtained by the light-receiving device, and both scales are An optical displacement detector for detecting a displacement direction and a displacement amount of the optical displacement is known. Here, the detection signals of a plurality of phases are obtained in order to determine the relative displacement direction and to obtain an electrical interpolation pulse.
最近、光学式変位検出器おいては、より小型化、低コ
スト化が求められていることから、受光器自体を一定ピ
ッチの受光素子アレイから構成して、参照スケールを兼
用させた構造の光学式変位検出器が各種提案されてい
る。In recent years, as optical displacement detectors have been required to be smaller and more cost-effective, the optical receiver itself is composed of a light-receiving element array with a constant pitch, and has an optical structure that also serves as a reference scale. Various types of displacement detectors have been proposed.
このような光学式変位検出器の一例として、本出願人
が先に提案(特開昭57−108621号)した光学式変位検出
器を第3図および第4図に示す。As an example of such an optical displacement detector, an optical displacement detector previously proposed by the present applicant (JP-A-57-108621) is shown in FIGS.
これは、ガラス基板11に略同一幅の光透過部12Aと光
遮蔽部12Bとを一定ピッチでかつ交互に配列した光学格
子12を有するメインスケール13と、このメインスケール
13の一方側に設けられた発光器14および発光器14からの
光を平行光線としてメインスケール13に照射させるコリ
メータレンズ15を含む照明系16と、前記メインスケール
13の光学格子12の映像が形成される面に配置されその映
像に基づく光を電気信号に変換する受光器21とから構成
されている。This is a main scale 13 having an optical grating 12 in which light transmitting portions 12A and light shielding portions 12B having substantially the same width are arranged at regular intervals and alternately on a glass substrate 11, and
An illumination system 16 including a light emitter 14 provided on one side of 13 and a collimator lens 15 for irradiating light from the light emitter 14 to the main scale 13 as parallel rays;
The optical receiver 12 is arranged on a surface of the optical grating 12 on which an image is formed and converts light based on the image into an electric signal.
受光器21は、ガラス基板22の表面にN型半導体基体23
を形成し、このN型半導体基体23に一定ピッチでP型半
導体層24を拡散形成して感光帯25を形成し、つまりN型
半導体基体23とP型半導体層24との接合面に感光体25を
形成し、さらに、その表面に前記メインスケール13を透
過してきた光の反射を防止して受光効率を向上させると
同時に半導体層が外部環境の影響で劣化するのを防止す
るために酸化シリコンなどの保護膜26を形成した構成で
ある。The light receiver 21 has an N-type semiconductor substrate 23 on the surface of a glass substrate 22.
And a photosensitive band 25 is formed by diffusing and forming a P-type semiconductor layer 24 at a constant pitch on the N-type semiconductor substrate 23, that is, a photosensitive member is formed on the bonding surface between the N-type semiconductor substrate 23 and the P-type semiconductor layer 24. 25, and furthermore, silicon oxide to prevent the reflection of the light transmitted through the main scale 13 on the surface to improve the light receiving efficiency and at the same time prevent the semiconductor layer from being deteriorated by the influence of the external environment. This is a configuration in which a protective film 26 is formed.
感光帯25を形成するP型半導体層24は、第4図に示す
如く、一定ピッチPで配列された一定幅の細帯状の第1
の半導体パターン24Aと、この第1の半導体パターン24A
と同一ピッチおよび同一幅でかつ第1の半導体パターン
24Aに対してδ(P/4)だけ相対移動方向へずれた第2の
半導体パターン24Bとから構成されている。ここで、各
半導体パターン24A,24BのピッチPは受光器21上に形成
されるメインスケール13上の光学格子12の映像のピッチ
と同一である。また、感光帯25の幅s、非感光帯の幅
(感光帯25の間隔)tは共にP/2である。As shown in FIG. 4, the P-type semiconductor layer 24 forming the photosensitive band 25 is formed of a narrow band-like first band having a constant width and arranged at a constant pitch P.
Semiconductor pattern 24A and the first semiconductor pattern 24A
Semiconductor pattern having the same pitch and the same width as the first semiconductor pattern
The second semiconductor pattern 24B is shifted in the relative movement direction by δ (P / 4) with respect to 24A. Here, the pitch P between the semiconductor patterns 24A and 24B is the same as the pitch of the image of the optical grating 12 on the main scale 13 formed on the light receiver 21. The width s of the photosensitive zone 25 and the width t of the non-sensitive zone (the interval between the photosensitive zones 25) are both P / 2.
照明系16からの光はメインスケール23の光透過部12A
を通ってP型半導体層24に到達する。ここで、メインス
ケール13と受光器21とが相対移動すると、例えば受光器
21に対してメインスケール13が移動すると、N型半導体
基体23とP型半導体層24との接合部、つまり感光帯25で
受光される光量が変化するから、それぞれの半導体パタ
ーン24A,24Bから得られる信号をプリアンプ27A,27Bで増
幅すれば、2相の検出信号Asinθ,Acosθが得られる。
よって、この検出信号から相対移動方向および変位量を
検出することができる。Light from the illumination system 16 passes through the light transmission section 12A of the main scale 23.
And reaches the P-type semiconductor layer 24. Here, when the main scale 13 and the light receiver 21 move relatively, for example, the light receiver
When the main scale 13 moves relative to 21, the junction between the N-type semiconductor substrate 23 and the P-type semiconductor layer 24, that is, the amount of light received by the photosensitive band 25 changes, so that it is obtained from the respective semiconductor patterns 24A and 24B. If the obtained signals are amplified by the preamplifiers 27A and 27B, two-phase detection signals Asinθ and Acosθ are obtained.
Therefore, the relative movement direction and the amount of displacement can be detected from the detection signal.
しかしながら、第3図および第4図に示す光学式変位
検出器では、次のような問題があった。However, the optical displacement detector shown in FIGS. 3 and 4 has the following problems.
第1に、複数相の検出信号を得るには、一定ピッチP
のP型半導体パターン24Aのほかに、これに対してP/4だ
けずらした一定ピッチPのP型半導体パターン24Bを形
成しなければならないので、受光器21の製造工程が複雑
化しコスト高の要因となっていた。First, in order to obtain detection signals of a plurality of phases, a constant pitch P
In addition to the P-type semiconductor pattern 24A, the P-type semiconductor pattern 24B having a constant pitch P shifted by P / 4 with respect to the P-type semiconductor pattern 24A must be formed. Had become.
第2に、感光帯25の幅sと間隔tとは略1:1であるか
ら、受光効率は従来の参照スケールを用いた場合と同程
度であり、受光効率の向上は望めなかった。Secondly, since the width s and the interval t of the photosensitive zone 25 are approximately 1: 1, the light receiving efficiency is almost the same as that in the case of using the conventional reference scale, and the improvement of the light receiving efficiency cannot be expected.
第3に、検出信号のピッチを4以上に分割した補間パ
ルスを得るには、電子回路を複雑化せざるを得なかっ
た。Third, in order to obtain an interpolation pulse in which the pitch of the detection signal is divided into four or more, the electronic circuit must be complicated.
以上のような問題は、受光素子をアレイ化した特開昭
52−131489号公報および英国特許1231029号公報などで
も同様であった。The above-mentioned problem is caused by the Japanese Patent Application Laid-Open
The same applies to JP-A-52-131489 and British Patent No. 1231029.
ここに、本発明の目的は、このような従来の問題を全
て解消し、安価かつ簡易な構成により、複数相の検出信
号を得ることができるとともに、受光効率を向上させる
ことがきる光学式変位検出器を提供することにある。Here, an object of the present invention is to solve all of the conventional problems described above, and to obtain a detection signal of a plurality of phases with an inexpensive and simple configuration, and to improve the light receiving efficiency. It is to provide a detector.
そのため、本発明では、光透過部と光遮蔽部または光
反射部と光非反射部を単位として、この複数単位が一定
ピッチで配列された光学格子を有する光学スケールと、
この光学スケールに光を照射する照明系とを含み、光学
スケールの光学格子の映像を用いて複数相の検出信号を
生成する光学式変位検出器において、前記映像のピッチ
をPとしたとき、幅がP/2の複数の感光帯を、P/4の間隔
でアレイ状にかつ前記光学格子の複数単位に相当する長
さ範囲以上に配列した受光器を前記映像が形成される面
に配置し、前記各単位において同相の位置関係にある感
光帯の出力をそれぞれ合成したことを特徴とするもので
ある。Therefore, according to the present invention, an optical scale having an optical grating in which a plurality of units are arranged at a constant pitch, with a light transmitting portion and a light shielding portion or a light reflecting portion and a light non-reflecting portion as units,
An optical displacement detector that includes an illumination system that irradiates light to the optical scale and generates a detection signal of a plurality of phases using an image of an optical grid of the optical scale; A plurality of photosensitive zones of P / 2, a photodetector arrayed at an interval of P / 4 in an array and at least a length range corresponding to a plurality of units of the optical grating is arranged on the surface on which the image is formed. In each of the units, outputs of photosensitive zones having the same phase positional relationship are synthesized.
照明系からの光が光学スケールに照射されると、光学
スケールの光学格子の映像が受光器上に形成される。例
えば、光透過部と光遮蔽部とが一定ピッチでかつ交互に
配列された光透過型の光学格子の場合では、照明系から
の光は光透過部のみを通って受光器へ達する。一方、光
反射部と光非反射部とが一定ピッチでかつ交互に配列さ
れた反射型の光学格子の場合には、照明系からの光は光
反射部で反射され受光器へ達する。When light from the illumination system irradiates the optical scale, an image of the optical grating of the optical scale is formed on the light receiver. For example, in the case of a light transmission type optical grating in which light transmission parts and light shielding parts are arranged alternately at a constant pitch, light from the illumination system reaches the light receiver only through the light transmission parts. On the other hand, in the case of a reflective optical grating in which light reflecting portions and light non-reflecting portions are alternately arranged at a constant pitch, light from the illumination system is reflected by the light reflecting portion and reaches the light receiver.
ここで、光学スケールと受光器とが相対移動すると、
受光器の各感光帯で受光される光量がそれぞれ相対移動
量に応じて変化するから、各感光帯から位相の異なる複
数相の検出信号が得られる。Here, when the optical scale and the receiver move relative to each other,
Since the amount of light received by each photosensitive band of the photodetector changes according to the relative movement amount, a plurality of phase detection signals having different phases can be obtained from each photosensitive band.
本発明では、光学格子の映像のピッチをPとしたと
き、各感光帯の幅をP/2に、間隔をP/4としてあるので、
複数相の検出信号を得ることができる。これにより、こ
の検出信号から相対移動方向および変位量を検出するこ
とができる。In the present invention, when the pitch of the image of the optical grating is P, the width of each photosensitive zone is P / 2, and the interval is P / 4.
Multiple phase detection signals can be obtained. Thus, the relative movement direction and the displacement can be detected from the detection signal.
従って、1つの感光帯のパターンによって複数相の検
出信号を得ることができるので、受光器の製造工程が簡
単になりコスト低減がはかれるとともに、従来のように
補間パルスを得るために電子回路も複雑化しなくてもよ
い。また、感光帯の幅に対して感光帯の間隔がP/4と狭
く、かつ、感光帯の幅がP/2としてあるので、従来のよ
うに感光帯の幅と間隔とを1:1とした参照スケール方式
に比べ、受光効率を一段と向上させることができる。Therefore, since the detection signals of a plurality of phases can be obtained by one photosensitive band pattern, the manufacturing process of the photodetector is simplified and the cost is reduced, and the electronic circuit for obtaining the interpolation pulse is also complicated as in the conventional case. It is not necessary to convert. Further, since the interval between the photosensitive zones is narrower as P / 4 with respect to the width of the photosensitive zone, and the width of the photosensitive zone is set as P / 2, the width and the interval of the photosensitive zone are set to 1: 1 as in the related art. The light receiving efficiency can be further improved as compared with the reference scale method described above.
以下、本発明の実施例を図面に基づいて説明する。な
お、以下の説明に当たって、第3図および第4図と同一
もしくは類似の構成要件については、同一符号を付し、
その説明を簡便にする。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the same or similar components as those in FIGS. 3 and 4 are denoted by the same reference numerals.
The explanation will be simplified.
本実施例を第1図および第2図に示す。同実施例の変
位検出器は、ガラス基板11の表面に同一幅の光透過部12
Aと光遮蔽部12Bとを一定ピッチ(例えば、20μm)でか
つ交互に配列した光学格子12を有する光学スケール13
と、この光学スケール13に光を平行光線として照射させ
る発光器14およびコリメータレンズ15を含む照明系16
と、前記光学スケール13の光学格子12の映像が形成され
る面に配置されその映像に基づく光を電気信号に変換す
る受光器31とから構成されている。This embodiment is shown in FIG. 1 and FIG. The displacement detector according to the embodiment has a light transmitting portion 12 having the same width on the surface of the glass substrate 11.
An optical scale 13 having an optical grating 12 in which A and light shielding portions 12B are alternately arranged at a constant pitch (for example, 20 μm).
And an illumination system 16 including a light emitter 14 and a collimator lens 15 for irradiating the optical scale 13 with light as parallel rays.
And a light receiver 31 that is arranged on the surface of the optical scale 13 on which the image of the optical grating 12 is formed and converts light based on the image into an electric signal.
受光器31は、光学スケール13を挟んで照明系16と反対
側で光学スケール13と対向するガラス基板32の表面にN
型半導体基体33を形成し、このN型半導体基体33に前記
光学格子12のピッチPより小さいピッチQ(Q<P)で
P型半導体層34をアレイ状に拡散形成して感光帯35を形
成し、つまりN型半導体基体33とP型半導体層34との接
合面に感光帯35を形成し、さらに、この表面に保護膜36
を形成した構成である。The light receiver 31 is provided on the surface of the glass substrate 32 facing the optical scale 13 on the side opposite to the illumination system 16 with the optical scale 13 interposed therebetween.
A photosensitive band 35 is formed by forming a P-type semiconductor layer 34 in an array at a pitch Q (Q <P) smaller than the pitch P of the optical grating 12 on the N-type semiconductor substrate 33. That is, a photosensitive band 35 is formed on the junction surface between the N-type semiconductor substrate 33 and the P-type semiconductor layer 34, and further, a protective film 36 is formed on this surface.
Is formed.
感光帯35を形成するP型半導体層34は、第2図に詳細
を示す如く、ピッチQ間隔で計8個形成されている。つ
まり、光学格子12の光透過部12Aと光遮蔽部12Bとを単位
としたとき、複数単位に相当する長さ範囲以上に配列さ
れている。各P型半導体層34の幅(つまり、感光帯35の
幅)をw、隣接する間隔(つまり、非感光帯の幅)をv
とすると、 w=P/2 v=P/4<w である。よって、 Q=w+v=3P/4<P である。As shown in detail in FIG. 2, a total of eight P-type semiconductor layers 34 forming the photosensitive zone 35 are formed at a pitch Q interval. In other words, when the light transmitting portion 12A and the light shielding portion 12B of the optical grating 12 are used as a unit, they are arranged in a length range corresponding to a plurality of units or more. The width of each P-type semiconductor layer 34 (that is, the width of the photosensitive zone 35) is w, and the adjacent interval (that is, the width of the non-sensitive zone) is v
Then, w = P / 2 v = P / 4 <w. Therefore, Q = w + v = 3P / 4 <P.
従って、隣接するP型半導体層34で得られる検出信号
の位相差は90゜であるから、各P型半導体層34を同相毎
に結線すると、位相差0゜,90゜,180゜,270゜の4相の
検出信号a1〜a4が得られる。さらに、これらの検出信号
a1〜a4をプリアンプ37で増幅するとともに、180゜位相
の異なる信号a1,a3、a2,a3を差動アンプ38A,38Bで差動
増幅すれば、2相の検出信号b1(Asinθ),b2(Acos
θ)が得られる。Therefore, since the phase difference between the detection signals obtained by the adjacent P-type semiconductor layers 34 is 90 °, when the respective P-type semiconductor layers 34 are connected for each phase, the phase differences are 0 °, 90 °, 180 °, 270 °. detection signals a 1 ~a 4 of 4 phase. In addition, these detection signals
If a 1 to a 4 are amplified by the preamplifier 37 and the signals a 1 , a 3 , a 2 , and a 3 having different phases by 180 ° are differentially amplified by the differential amplifiers 38A and 38B, a two-phase detection signal b 1 (Asinθ), b 2 (Acos
θ) is obtained.
このような実施例によれば、一定ピッチQの感光帯35
のパターンだけで、4相の検出信号a1〜a4を得ることが
できるから、受光器31の製造工程が簡単になりコスト低
減がはかれるとともに、従来のように補間パルスを得る
ために電子回路も複雑化しなくてもよい。According to such an embodiment, the photosensitive zone 35 having a constant pitch Q
The only pattern, since it is possible to obtain the detection signal a 1 ~a 4 four-phase, step together with cost can be reduced to simplify manufacture of the light receiver 31, an electronic circuit in order to obtain a conventional manner the interpolation pulse Need not be complicated.
また、感光帯の幅wが非感光帯の幅vより大きいの
で、換言すると、感光帯の幅wに対して感光帯の間隔が
P/4と狭く、かつ、感光帯の幅wがP/2としてあるので、
従来のように感光帯の幅と間隔とを1:1とした参照スケ
ール方式に比べ、受光効率を一段と向上させることがで
きる。Also, since the width w of the photosensitive zone is larger than the width v of the non-sensitive zone, in other words, the interval between the photosensitive zones is greater than the width w of the photosensitive zone.
Since it is as narrow as P / 4 and the width w of the photosensitive zone is P / 2,
The light receiving efficiency can be further improved as compared with the conventional reference scale system in which the width and the interval of the photosensitive zone are set to 1: 1.
なお、上記実施例では、N型半導体基体33にP型半導
体層34を形成して感光帯35を構成したが、感光帯35は受
光量を電気信号に変換するものであればよいから、P型
半導体基体上にN型半導体層を所定ピッチで形成して構
成するようにしてもよく、さらに、光導電素子(CdS)
などでもよい。In the above embodiment, the P-type semiconductor layer 34 is formed on the N-type semiconductor substrate 33 to form the photosensitive band 35. However, the photosensitive band 35 may be any as long as it converts the amount of received light into an electric signal. N-type semiconductor layers may be formed on the type semiconductor substrate at a predetermined pitch, and furthermore, a photoconductive element (CdS)
And so on.
また、上記実施例では、光透過型について説明した
が、反射型にも適用できる。この場合には、光学スケー
ル13の光学格子12を光反射部と光非反射部とが一定ピッ
チでかつ交互に配列する構成とし、この光学格子12に対
して照明系16からの光を照射させ、光反射部で反射され
た光が受光器へ入射できるように構成すればよい。In the above embodiment, the light transmission type is described, but the invention can be applied to a reflection type. In this case, the optical grating 12 of the optical scale 13 is configured such that the light reflecting portions and the light non-reflecting portions are arranged alternately at a constant pitch and the optical grating 12 is irradiated with light from the illumination system 16. What is necessary is just to comprise so that the light reflected by the light reflection part may be made incident on a light receiver.
また、本発明は、直線型の変位検出器に限らず、ロー
タリーエンコーダなどにも適用できる。さらに、2枚の
光学格子を用いたシステムだけでなく、3枚の光学格子
を用いた、いわゆるスリーグレイティングシステムにも
当然適用できる。Further, the present invention can be applied not only to a linear displacement detector but also to a rotary encoder and the like. Further, the present invention can be naturally applied to not only a system using two optical gratings but also a so-called three-grading system using three optical gratings.
以上の通り、本発明によれば、安価かつ簡易な構成に
より、複数相の検出信号を得ることができるととに、受
光効率を向上させることができる光学式変位検出器を提
供することができる。As described above, according to the present invention, it is possible to provide an optical displacement detector that can obtain a detection signal of a plurality of phases and can improve the light receiving efficiency with an inexpensive and simple configuration. .
第1図および第2図は本発明の実施例を示すもので、第
1図は概略構成図、第2図は第1図のII−II線方向から
みた図である。第3図および第4図は従来の変位検出器
を示すもので、第3図は概略構成図、第4図は第3図の
IV−IV方向からみた図である。 11……ガラス基板、12A……光透過部、12B……光遮蔽
部、12……光学格子、13……光学スケール、14……発光
器、15……コリメータレンズ、16……照明系、31……受
光器、32……ガラス基板、33……N型半導体基体、34…
…P型半導体層、35……感光帯、36……保護膜。1 and 2 show an embodiment of the present invention. FIG. 1 is a schematic configuration diagram, and FIG. 2 is a diagram viewed from the direction of line II-II in FIG. 3 and 4 show a conventional displacement detector. FIG. 3 is a schematic configuration diagram, and FIG. 4 is a diagram of FIG.
It is the figure seen from the IV-IV direction. 11 ... Glass substrate, 12A ... Light transmitting part, 12B ... Light shielding part, 12 ... Optical grating, 13 ... Optical scale, 14 ... Light emitter, 15 ... Collimator lens, 16 ... Lighting system, 31 photodetector 32 glass substrate 33 N-type semiconductor base 34
... P-type semiconductor layer, 35 ... photosensitive zone, 36 ... protective film.
Claims (2)
反射部を単位として、この複数単位が一定ピッチで配列
された光学格子を有する光学スケールと、この光学スケ
ールに光を照射する照明系とを含み、光学スケールの光
学格子の映像を用いて複数相の検出信号を生成する光学
式変位検出器において、 前記映像のピッチをPとしたとき、幅がP/2の複数の感
光帯を、P/4の間隔でアレイ状にかつ前記光学格子の複
数単位に相当する長さ範囲以上に配列した受光器を前記
映像が形成される面に配置し、 前記各単位において同相の位置関係にある感光帯の出力
をそれぞれ合成したことを特徴とする光学式変位検出
器。1. An optical scale having an optical grating in which a plurality of units are arranged at a fixed pitch in units of a light transmitting part and a light shielding part or a light reflecting part and a light non-reflecting part, and irradiating the optical scale with light. An optical displacement detector that generates a detection signal of a plurality of phases by using an image of an optical grid of an optical scale, wherein a pitch of the image is P, a plurality of widths of P / 2. Photosensitive bands are arranged on the surface on which the image is formed, and the photodetectors arranged in an array at intervals of P / 4 and in a length range corresponding to a plurality of units of the optical grating are arranged on the surface where the image is formed. An optical displacement detector characterized by combining outputs of photosensitive zones in a positional relationship.
器は、半導体基体上にこれと異なる極性の半導体層を所
定ピッチで形成して構成されていることを特徴とする光
学式変位検出器。2. An optical displacement detecting device according to claim 1, wherein said photodetector is formed by forming semiconductor layers having different polarities at a predetermined pitch on a semiconductor substrate. vessel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62213894A JP2610624B2 (en) | 1987-08-26 | 1987-08-26 | Optical displacement detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62213894A JP2610624B2 (en) | 1987-08-26 | 1987-08-26 | Optical displacement detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6457120A JPS6457120A (en) | 1989-03-03 |
| JP2610624B2 true JP2610624B2 (en) | 1997-05-14 |
Family
ID=16646775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62213894A Expired - Fee Related JP2610624B2 (en) | 1987-08-26 | 1987-08-26 | Optical displacement detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2610624B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7186969B2 (en) | 2003-02-12 | 2007-03-06 | Mitutoyo Corporation | Optical configuration for imaging-type optical encoders |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4951884B2 (en) * | 2005-06-29 | 2012-06-13 | ミツミ電機株式会社 | Encoder device |
| JP5112989B2 (en) * | 2008-08-20 | 2013-01-09 | 株式会社ミツトヨ | Photoelectric encoder |
| JP5641746B2 (en) | 2010-02-12 | 2014-12-17 | 株式会社ミツトヨ | Photoelectric encoder |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5652247A (en) * | 1979-10-01 | 1981-05-11 | Hiroaki Kikuchi | Residence |
-
1987
- 1987-08-26 JP JP62213894A patent/JP2610624B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7186969B2 (en) | 2003-02-12 | 2007-03-06 | Mitutoyo Corporation | Optical configuration for imaging-type optical encoders |
| US7435945B2 (en) | 2003-02-12 | 2008-10-14 | Mitutoyo Corporation | Optical configuration for imaging-type optical encoders |
| US7570433B2 (en) | 2004-02-11 | 2009-08-04 | Mitutoyo Corporation | Photoelectric encoder |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6457120A (en) | 1989-03-03 |
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