JP2577493B2 - Silicon base glass, silicon-based sensor, and silicon-based pressure sensor - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a silicon pedestal glass used as a member for supporting a silicon base material on a support frame or a diaphragm of an X-ray mask. Furthermore, the present invention relates to a silicon-based sensor and a silicon-based pressure sensor having a silicon substrate with a silicon base glass.

[Conventional technology]

An example of a typical use of a unit in which a silicon base material is held by a silicon pedestal glass is described in IEICE Technical Report (Vol.89 No.288, P13-18, November 17, 1989).
A silicon-based pressure sensor that detects pressure as an external force, as proposed in “Residual Stress in Silicon / Glass Anodic Bonding” (Tetsuo Fukada, Katsuhiro Amano), is widely known. There are various types of silicon-based pressure sensors of this type in a conversion method for converting strain generated in a diaphragm made of silicon single crystal into an electric signal. Among them, a sensor called a semiconductor pressure sensor using the piezoresistance effect is a representative example, and is widely used in the automobile industry and the FA equipment industry. As a specific application, it is used as a sensor of an automatic control system for controlling a fuel flow rate, a hydraulic pressure, and the like in order to measure a pressure and a flow rate of a gas or a liquid.

The feature of this type of semiconductor pressure sensor is that a well-known semiconductor circuit forming technique is applied to the surface of a thin-film silicon single crystal substrate formed so as to be elastically deformable to form a part of a strain gauge. It constitutes a diaphragm.
The mechanism of the pressure detection is that when a pressure is applied to the silicon single crystal substrate, a strain is generated, and the specific resistance of the strain gauge changes according to the strain. It is measured in exchange for change.

In recent years, a glass material has been used for a holding member for holding a diaphragm made of a silicon single crystal substrate of the semiconductor pressure sensor so that anodic bonding to a silicon base material can be performed. Anodic bonding refers to "a pressure sensor whose characteristic variation is reduced to 1/3 of the conventional value" (Akihiro Aoi, Yumasa Abe, OMRON TECHNICS VOL.26 No.3 (Tour Volume 79) 1986, P2
15 to P222), a technique in which a voltage is applied while a silicon base material and glass are heated to 300 to 600 ° C. to join them together. As a glass material of this kind, a thermal expansion coefficient relatively similar to that of a silicon substrate (32 to
It has already been proposed to use a borosilicate glass having a temperature of 36 × 10 ⁻⁷ / ° C.) (see Japanese Patent Application Laid-Open No. 59-176639).

In order to obtain a high-precision pressure sensor, since the silicon base expands and contracts due to a temperature change, it is necessary to avoid the occurrence of strain in the unloaded silicon base due to thermal stress caused by the temperature change. Therefore, as a means for electrically calibrating to prevent a measurement error due to such a temperature change, a semiconductor pressure sensor is generally put into practical use with a temperature compensation circuit attached thereto (for example, hydraulic technology). '88 .5.47 See “Semiconductor Pressure Sensors” on pages 47 to 51).

[Problems to be solved by the invention]

As described above, the coefficient of thermal expansion of borosilicate glass has a value close to the coefficient of thermal expansion of silicon crystal. But,
Although they have similar values, they are only in a very limited range (from room temperature to around 230 ° C.). In other words, the borosilicate glass has a larger coefficient of thermal expansion than the silicon substrate up to around 230 ° C.
Conversely, when the distance exceeds the vicinity, the silicon substrate has a smaller thermal expansion coefficient than the borosilicate glass. In addition, when the coefficient of thermal expansion changes, the ratio of the amount of change in the coefficient of thermal expansion / the amount of change in the temperature is not uniform when viewed in a wide temperature range. This tendency is particularly remarkable at high temperatures (see FIG. 2 described later).

The problem here is that at around 400 ° C. or higher, which is considered suitable for anodic bonding with the silicon base material, the difference in thermal expansion coefficient with the silicon base material becomes extremely large at 1.3 × 10 ⁻⁴ or more. Large residual strain (residual deformation) on silicon substrates
Is to occur. When such a silicon substrate with a glass for a silicon pedestal (hereinafter, referred to as a silicon substrate with a pedestal) is applied to a sensor, the functional load imposed on the temperature compensation circuit increases, which is a problem.

Next, the fact that the thermal expansion coefficient variation / temperature variation is non-uniform depending on the temperature means that when a conventional silicon substrate with a pedestal is applied to a silicon substrate type sensor, the unit temperature of the offset variation of the temperature compensation circuit Since the change amount per unit becomes non-uniform depending on the temperature, a temperature compensation circuit requiring complicated control is required, which is a problem.

The present invention has been made in view of the above circumstances, and has excellent thermal expansion characteristic matching with a silicon substrate, in other words, a thermal expansion coefficient that is close to the thermal expansion coefficient of a silicon substrate over a wide temperature range. It is an object of the present invention to provide a silicon pedestal glass having:

Another object of the present invention is to provide a glass for a silicon pedestal having a thermal expansion coefficient close to that of a silicon substrate at a heating temperature at the time of anodic bonding with the silicon substrate.

It is another object of the present invention to provide a silicon pedestal glass capable of controlling residual strain generated by cooling from a heating state for anodic bonding when anodic bonding with a silicon substrate.

Another object of the present invention is to provide a glass for a silicon pedestal, which can perform good anodic bonding with a silicon base material and can be easily melted from a glass material.

Another object of the present invention is to provide a silicon-based sensor and a silicon-based pressure sensor in which residual strain (deformation) due to anodic bonding is controlled.

Another object of the present invention is to provide a silicon-based sensor and a silicon-based pressure sensor that can easily perform temperature compensation.

[Means for solving the problem]

The present inventors have made intensive studies and found that aluminum oxide is an important factor among glass components in order to impart glass with a thermal expansion coefficient close to that of a silicon substrate over a wide temperature range. I found something. As a result, they have come to the knowledge that the above-mentioned problem can be solved if the glass for the silicon pedestal is made of aluminosilicate glass, which is a glass type completely different from the conventional borosilicate glass.

The present invention is based on this finding, and the structure of the silicon pedestal glass of the first invention is a silicon pedestal glass bonded to a silicon base material, the aluminosilicate having silicon oxide and aluminum oxide as main components. It is characterized by being made of glass.

The structure of the silicon pedestal glass according to the second invention is characterized in that, in the above-mentioned first invention, the aluminosilicate glass contains movable carrier ions enabling anodic bonding. Examples of the mobile carrier ion include a sodium ion. Further, the content of sodium ions is suitably in the range of 1-5% by weight percent Na ₂ O.

The structure of the silicon pedestal glass of the third invention is the same as the first or second invention, except that the aluminosilicate glass is made of Al.
Characterized in that it contains 14 to 28% of ₂ O ₂ in weight percent.

The structure of the glass for a silicon pedestal according to the fourth invention is such that, in the first invention described above, the aluminosilicate glass is such that, by weight, SiO ₂ 50 to 70% Al ₂ O ₃ 14 to 28% Na ₂ O 1 to 5% MgO It contains 1 to 13% of components, and the total amount of the above components is at least 80%, and the content of other components is 20% or less.

In the silicon pedestal glass according to the fourth aspect of the present invention, it is preferable that each component is SiO ₂ 56 to 64% Al ₂ O ₃ 18 to 24% Na ₂ O 2 to 3% MgO 2 to 6% by weight.

The structure of the silicon pedestal glass of the fifth invention is the same as that of any of the first to fourth inventions, except that ZnO, B ₂ O ₃ , La
₂ O ₃ , BaO, SrO, CaO, PbO, K ₂ O, Li ₂ O, ZrO ₂ , TiO ₂ , P ₂
It is characterized by containing at least one or more components selected from the group consisting of O ₅ and Sb ₂ O ₃ .

In the glass for a silicon pedestal according to the fifth invention,
Suitably, the ZnO content is 2-11% by weight.

The structure of the silicon pedestal glass of the sixth invention is the same as that of the first invention, except that the aluminosilicate glass is, in terms of weight percent, SiO ₂ 56-64% Al ₂ O ₃ 18-24% Na ₂ O 2-3% MgO. 2 to 6% ZnO 2 to 11% is contained, the total amount of the above components is at least 85%, and the content of other components is 15% or less.

Further, the configuration of the seventh silicon pedestal glass is the same as that of any of the first to fourth inventions described above, except that Zn, B, La, Ba,
It is characterized by containing a fluoride of at least one element selected from the group consisting of Sr, Ca, Pb, K, Li, Zr, Ti, P and Sb.

Structure of glass silicon base of the eighth invention is a glass for a silicon base which is bonded to a silicon substrate, in a temperature range of 400 ° C. from room temperature and elongation alpha ₁ due to thermal expansion of the glass, the glass The ratio α ₁ / α ₂ to the elongation elongation α ₂ due to thermal expansion of the silicon base material to be joined is 0.8 to
1.2 and the difference between the two elongations (α ₁ −
α ₂ ) has the same sign in the temperature range, or the difference (α ₁ −α ₂ ) is zero.

The configuration of the silicon pedestal glass of the ninth invention is a silicon pedestal glass that is anodically bonded to a silicon substrate,
In the heating temperature near the time of anodic bonding, the elongation alpha ₁ due to thermal expansion of the glass, the ratio alpha ₁ / alpha ₂ between elongation alpha ₂ due to thermal expansion of the silicon substrate to be bonded to the glass 0.
It is characterized by a value in the range of 8 to 1.2.

According to a first aspect of the present invention, there is provided a silicon-based sensor comprising: a silicon base; and a silicon pedestal glass bonded to the silicon base to hold the silicon base so as to be elastically deformable. In the silicon substrate type sensor for detecting the applied external force from the amount of deformation of the silicon substrate, the silicon pedestal glass is any one of the above-described first to ninth inventions. .

A silicon-based sensor according to a second invention is characterized in that, in the silicon-based sensor according to the first invention, the silicon substrate and the silicon pedestal glass are anodically bonded.

A silicon-based pressure sensor according to a third invention is the silicon-based pressure sensor according to the first or second invention, wherein the external force is pressure.

A silicon-based sensor according to a fourth aspect of the present invention is the silicon-based pressure sensor of the third aspect described above, wherein the means for detecting the amount of deformation is a strain gauge, and the strain due to thermal stress is compensated for temperature based on the offset variation. The temperature compensating circuit is characterized in that the offset compensating amount per unit temperature in the operating temperature band of the sensor is substantially equal.

Hereinafter, the reason why the preferable ranges of the respective components are selected in the silicon base glass of the second to sixth inventions will be described.

If SiO ₂ is less than 50%, the coefficient of thermal expansion gradually increases and the chemical durability decreases. On the other hand, if SiO ₂ exceeds 70%, the viscosity tends to be too high, making melting difficult. Thus, SiO ₂ is preferably in the range of 50% to 70%, more preferably from 56 to 64%.

Al ₂ O ₃ is a component necessary for obtaining a thermal expansion coefficient close to that of the silicon base material. However, if it is less than 14%, the tendency of phase separation tends to increase and the viscosity in the high-temperature region tends to increase, and if it exceeds 28%, the devitrification resistance decreases. Therefore, the range is preferably 14 to 28%. More preferred is a range of 18 to 24%.

Na ₂ O is a preferred ion as a mobile carrier ion that enables anodic bonding. As the amount of added Na ₂ O increases, the electrical conductivity increases and anodic bonding can be performed at a low temperature. However, if it exceeds 5%, the coefficient of thermal expansion gradually increases. Therefore, the upper limit is preferably 5%. On the other hand, if it is less than 1%, the electric conductivity becomes small, so that anodic bonding becomes difficult and melting becomes difficult. Therefore, the addition amount of Na ₂ O is preferably 1% or more. A more preferred range is 2-3%.

MgO is an effective component for obtaining a stable glass, and makes it possible to introduce Na ₂ O, which is a mobile carrier ion during anodic bonding, to a maximum extent. If the content of MgO is less than 1%, the devitrification resistance is deteriorated and the phase separation tendency is increased. If it exceeds 13%, the thermal expansion coefficient tends to be too large. is there. A more preferred range is 2 to 6%. MgO also has the effect of reducing viscosity and improving meltability.

Next, the optional components will be described. ZnO is not an essential component, but is a preferable component because the effect of reducing the expansion coefficient is greater than that of MgO and the chemical durability is improved.
However, if it exceeds 14%, the tendency of phase separation tends to increase and the viscosity tends to be too high. The optimal range for the content of ZnO is 2-11%.

B ₂ O ₃ is not always necessary, but is effective for improving the melting property. However, the chemical durability deteriorates with an increase in the amount of addition, so the upper limit is preferably 15%. The most preferred range is less than 2%. La ₂ O ₃ has the effect of lowering viscosity and improving chemical durability. However, considering that it is relatively expensive, it is appropriate to set the upper limit to 5%.

BaO, SrO, CaO, PbO, K ₂ O, Li ₂ O, ZrO ₂ , TiO ₂ , P ₂ O
₅ and fluorides of these elements can be added in desired amounts in place of these oxides. Further, As ₂ O ₃ , Sb ₂ O ₃ , chloride and the like can be appropriately added as a defoaming agent at the time of melting.

(Operation)

The aluminosilicate glass constituting the silicon pedestal glass of the present invention is mainly composed of silicon oxide and aluminum oxide having a thermal expansion coefficient very similar to that of silicon as a base material. The coefficient difference is small over a wide temperature range. In addition, the change in the coefficient of thermal expansion coefficient due to the temperature change is small. In other words, the ratio of the thermal expansion coefficient change / temperature change is substantially equal over a wide temperature range, and the value is close to the ratio of the silicon substrate.

Since the above-mentioned temperature range includes the heating temperature at the time of anodic bonding, residual strain (residual deformation) generated in the silicon base material after anodic bonding is controlled to a minimum. It is preferable to apply the silicon substrate reduced in such residual strain (deformation) to the silicon substrate type sensor and the silicon substrate type pressure sensor because the function required for the temperature compensation circuit of the sensor is simplified.

In addition, the silicon pedestal glass of the present invention has a substantially uniform ratio of the thermal expansion coefficient change / temperature change and is close to the ratio of the silicon base material. The amount of change per unit temperature of the amount of offset fluctuation in the compensation circuit becomes substantially equal. As a result, a temperature control circuit that can be easily controlled can be used.

〔Example〕

Hereinafter, a silicon pedestal glass and a silicon substrate type pressure sensor according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3.

FIG. 1 is a longitudinal sectional view of a silicon substrate type pressure sensor of an embodiment.

FIG. 2 is a view showing a change in a coefficient of thermal expansion (hereinafter, referred to as an elongation in the example) of the glass for a silicon pedestal of the present example and a comparative example due to a temperature change.

FIG. 3 is a diagram showing a change in the amount of offset fluctuation due to a temperature change in the glass for the silicon pedestal of the present example and the glass of the comparative example.

Examples 1 to 12 [Production of glass for silicon pedestal] Each glass for silicon pedestal of Examples 1 to 12 was manufactured such that the glass composition finally obtained was as shown in Table 1. In addition, each component value in Table 1 is represented by weight percent.

The raw materials are selected so that the finally obtained glass composition becomes the composition of each example shown in Table 1, and the raw materials are weighed so that the weight in terms of oxide becomes 12 kg, and mixed with a mixer. I do. In addition, the raw materials are usually used silica powder, alumina, aluminum hydroxide, sodium carbonate, sodium nitrate,
Magnesium carbonate, zinc white, lanthanum oxide, boric acid, borax and the like can be appropriately selected and used. Then, the mixed raw material is poured into a platinum crucible having a capacity of 5, and the raw material is melted at 1600 ° C. for 16 hours in a Kanthal super furnace (electric furnace), and homogenized and defoamed. And then gradually cooled to obtain a glass block.

The average elongation percentage of each of the examples thus obtained was measured, and the values are shown in Table 1. In Table 1, the elongation is
It has an average elongation of 30 ° C to 400 ° C (× 10 ^-7 / ° C), and its durability is as follows.
This is the weight loss rate when treated for 0 hours. From Table 1,
The elongation rate of each example is the elongation rate of a silicon crystal (32 to 36 ×
10 ^-7 / ° C). Also, the chemical durability was good as seen in water resistance.

Next, from among these examples, Examples 1 and 2 will be described as examples, and FIG. 2 shows that the present example has good matching with respect to the thermal expansion characteristic with the silicon crystal. This will be described with reference to FIG.

The evaluation items indicating good matching of the thermal expansion characteristics described above are:
This is a change in elongation with a temperature change in comparison with a silicon crystal. Therefore, the elongation-temperature characteristic diagram of FIG. 2 shows the change in elongation of each of Examples 1 and 2 described above and the conventional borosilicate glass as a comparative example. As is clear from FIG. 2, the difference in the elongation percentage of the glass of the comparative example from the silicon crystal gradually increases when the temperature exceeds about 230 ° C., and when the temperature exceeds a suitable heating temperature (400 ° C.) during anodic bonding, the difference becomes larger. Become larger (1.3 × 10 ^-4 or more).

On the other hand, in Example 1, the elongation ratio with silicon is almost the same over a wide temperature range from room temperature to 500 ° C. or,
Example 2 has a slight difference in elongation percentage from the silicon crystal (about 0.9 × 10 ⁻⁴ ) as compared with Example 1, but the value is small. Assuming that the elongation percentages of Examples 1 and 2 are α ₁ ′ and α ₁ ″, respectively, and that the elongation percentage of the silicon crystal is α ₂ , α ₁ ′ / α ₂
Was in the range of 0.8 to 1.2. Therefore, even when the silicon pedestal glass of this embodiment is anodically bonded to a silicon crystal substrate at a high temperature of, for example, 400 ° C. or more,
Since the difference in elongation percentage from the silicon crystal is about 0 to 0.9 × 10 ^-4 , the residual strain (deformation) generated in the silicon crystal substrate is
It was extremely low compared to borosilicate glass.

In the characteristic diagram shown in FIG. 2, in addition to the above-described points, the first and second embodiments both show an elongation ratio (α ₁ −α ₂ ) with the silicon crystal and (α ₁ ″ − α ₂ ) is zero or a negative value over the above temperature range, which means that the ratio of elongation change / temperature change is substantially uniform over a wide temperature range, and the value of the ratio is This means that it is similar to a silicon crystal, and thus it can be seen that the elongation is a substantially linear function with respect to temperature.

On the other hand, in the comparative example, the difference in elongation percentage from the silicon crystal was 230
When the temperature exceeds 230 ° C., the difference in elongation from the silicon crystal gradually increases. Thus, in the comparative example, the elongation change amount / temperature change amount is non-uniform over a wide temperature range.

As described above, Examples 1 and 2 have been described. However, measurements were also performed on other Examples, and it was confirmed that they had similar thermal expansion characteristics.

Example 13 [Silicon base type pressure sensor] With reference to FIGS. 1 and 3, a silicon base type pressure sensor will be described as an example using the silicon pedestal glass of the present embodiment described above.

The silicon-based pressure sensor shown in FIG. 1 is a kind of a silicon-based pressure sensor that detects an external force, and is a silicon-based pressure sensor using piezoresistance.

Reference numeral 1 denotes a pressure-sensitive chip made of silicon crystal (having an elongation of 34 × 10 ⁻⁷ / ° C.). Reference numeral 2 denotes a pedestal glass made of the silicon pedestal glass of the above-described embodiment, and a central portion has a perforated shape. Pedestal glass 2 is pressure sensitive chip 1
Are joined by anodic bonding described later so that the diaphragm becomes a diaphragm. In addition, the above-mentioned pressure-sensitive chip 1
Is provided on the upper surface thereof. The strain sensing resistance gauge is connected to a temperature compensation circuit (not shown) via the lead pins 5 and 5. Pressure sensitive chip 1
The pedestal glass 2 bonded to the base 3 is fixed so that the center portion of the pierced glass coincides with the through hole of the base 3 (Kovar having a coefficient of thermal expansion of 46 × 10 ⁻⁷ / ° C.) serving as a passage of the medium to be measured. , Cap 4. Therefore, the pressure in the space surrounded by the base 4 and the cap 4 shows a constant value corresponding to the temperature at that time. The lead pins 5, 5 are also fixed to the base 3 by a perme chuck seal to obtain high airtightness.

Next, the anodic bonding between the pressure-sensitive chip 2 and the base glass 2 will be described in detail. In the anodic bonding, the polished pedestal glass 2 of the pressure-sensitive chip 1 is superposed, and then pressure is applied between the pressure-sensitive chip 1 and the pedestal glass 2 using the pressure-sensitive chip 1 as an anode and the pedestal glass 2 as a cathode. While at a temperature of 400 ℃ 8
The test was performed by applying a DC voltage of 00 volt. By such anodic bonding, Na ₂ O, which is a movable carrier ion in the pedestal glass 2, moves, so that the two can be adhered to each other with good airtightness in a short time without using an adhesive.

Next, the function of the semiconductor pressure sensor (silicon base type pressure sensor) of the present invention will be described. When a pressure of a medium to be measured such as a fluid is applied to the lower surface of the pressure-sensitive chip 1 from the direction of the arrow P as shown in FIG. The pressure tip 1 deforms and the gauge resistance changes. This change in resistance value is detected by a full bridge circuit or the like including the strain-resisting resistance gauge 6, and a weak pressure can be measured with high sensitivity in a temperature compensated state.

Next, the characteristics of the temperature-offset fluctuation amount of the silicon-based pressure sensor thus obtained will be described with reference to FIG.

FIG. 3 is a temperature-offset variation characteristic diagram in which the horizontal axis represents temperature T (° C.) and the vertical axis represents offset variation (mV). The offset fluctuation amount is a voltage fluctuation amount at each temperature output from the pressure-sensitive chip 1 in a no-load state. The temperature range of this characteristic diagram was selected from -30 ° C to 120 ° C, which is the range where the pressure sensor generally compensates for the characteristics.

FIG. 3 shows the amount of offset fluctuation of the pressure sensor when the pedestal glasses of Examples 1 and 2 are used. Also, as a comparative example, the offset fluctuation amount when borosilicate glass is applied to the pressure sensor is shown.

As is clear from FIG. 3, in the case of Examples 1 and 2, the amount of offset fluctuation is extremely small as compared with the comparative example.

Further, as is clear from the figures, in Examples 1 and 2, the ratio of the offset variation / temperature variation is substantially uniform over a wide temperature range, and the offset variation is a linear function of temperature. On the other hand, in the comparative example, the ratio of the off-seto fluctuation amount / temperature change amount changes near 60 ° C., and it can be seen that the offset change amount is non-uniform in a wide temperature range of 30 ° C. to 120 ° C. From these facts, when the temperature compensating circuits are the first and second embodiments, a temperature compensating circuit that requires only simple control can be used. However, in the comparative example,
It turns out that a temperature compensation circuit that requires complicated control is required.

Further, in addition to the examples 1 and 2, the glass for a silicon pedestal according to the example was also applied to a silicon-based sensor, and the same characteristics were measured. It was confirmed that the same effect was obtained.

〔The invention's effect〕

ADVANTAGE OF THE INVENTION According to the glass for silicon pedestals of this invention, favorable matching is obtained on the thermal expansion characteristic with a silicon base material. As a result, when the glass of the present invention is bonded to a silicon substrate,
Generation of distortion (deformation) due to thermal stress can be controlled.

Further, in the case of anodic bonding with a silicon substrate, it is possible to control the occurrence of residual strain (deformation) in the silicon substrate in an unloaded state after anodic bonding.

Further, according to the silicon substrate type displacement (pressure) sensor of the present invention, the functional load required for the temperature compensation circuit can be reduced. The amount of change in offset per unit temperature in the operating temperature band is substantially the same, so that it is possible to use a temperature compensation circuit that is easy to control in the comparative example.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view of a silicon-based pressure sensor according to an embodiment, FIG. 2 is an elongation-temperature characteristic diagram, and FIG. 3 is an offset variation-temperature characteristic diagram. 1 ... pressure-sensitive chip, 2 ... pedestal glass, 3 ... base,
4 ... Cap

Claims (16)

(57) [Claims] 1. A glass for a silicon pedestal bonded to a silicon substrate, the glass comprising aluminosilicate glass containing silicon oxide and aluminum oxide as main components. 2. The glass according to claim 1, wherein the aluminosilicate glass contains mobile carrier ions enabling anodic bonding. 3. The glass according to claim 2, wherein the mobile carrier ion is a sodium ion, and the sodium ion has a content of 1 to 5% by weight as Na ₂ O. 4. An aluminosilicate glass comprising 14% by weight.
Glass according to any one of claims 1 to 3 containing to 28% Al ₂ O _3. 5. An aluminosilicate glass containing, by weight, a component of 50 to 70% of SiO _2, 14 to 28% of Al ₂ O ₃ 1 to 5% of Na ₂ O, and 1 to 13% of MgO. The glass according to claim 1, wherein the amount is at least 80% and the content of other components other than the above is 20% or less. 6. in weight _{percent, SiO 2 56~64% Al 2 O} 3 18~24% Na 2 O 2~3% MgO 2~6% of claim 5 glass according containing component. (7) ZnO, B ₂ O ₃ , La ₂ O ₃ , BaO, SrO, CaO, PbO,
K ₂ O, Li ₂ O, claim containing at least one or more components selected from the group consisting of _{ZrO 2, TiO 2, P 2} O 5 and Sb ₂ O _3. 1 to
7. The glass according to any one of the above items 6. 8. The content of ZnO is 2 to 11% by weight.
The glass according to claim 7, which is: 9. The aluminosilicate glass contains the following components by weight: 56-64% SiO ₂ 18-24% Al ₂ O ₃ 2-3% Na ₂ O 2-3% MgO 2-6% ZnO 2-11% The glass according to claim 6, wherein the total amount of the components is at least 85%, and the content of other components other than the above is 15% or less. 10. Zn, B, La, Ba, Sr, Ca, Pb, K, Li,
At least one selected from the group consisting of Zr, Ti, P and Sb
The glass according to any one of claims 1 to 6, comprising a fluoride of the above element. 11. A glass for a silicon pedestal bonded to a silicon substrate, wherein in a temperature range from room temperature to 400 ° C.,
Wherein the elongation percentage alpha ₁ due to thermal expansion of the glass, the value of the range ratio alpha ₁ / alpha ₂ is 0.8 to 1.2 and elongation alpha ₂ due to thermal expansion of the silicon substrate to be bonded to the glass, and the The glass characterized in that the difference (α ₁ −α ₂ ) between the two elongation percentages has the same sign in the temperature range, or the difference (α ₁ −α ₂ ) is zero. 12. A glass for silicon pedestal is anodically bonded to the silicon substrate, in the heating temperature range at the time of anodic bonding, the elongation alpha ₁ due to thermal expansion of the glass, silicon group is bonded to the glass Elongation α due to thermal expansion of material
_{2. The} glass for a silicon pedestal, wherein the ratio α ₁ / α ₂ to ₂ is a value in the range of 0.8 to 1.2. 13. A silicon base and a silicon pedestal glass joined to the silicon base to hold the silicon base so as to be elastically deformable, and apply an external force applied to the silicon base to the silicon base. In a silicon substrate type sensor for detecting from a deformation amount, the silicon pedestal glass is any one of claims 1 to 12.
The sensor according to any one of the preceding claims, wherein the sensor is glass. 14. The sensor according to claim 13, wherein the silicon substrate and the silicon pedestal glass are anodic-bonded. 15. The silicon-based pressure sensor according to claim 13, wherein the external force is pressure. 16. A means for detecting the amount of deformation is a strain gauge, comprising a temperature compensation circuit for temperature-compensating residual strain generated in the silicon substrate due to a temperature change based on the amount of offset variation. 16. The circuit according to claim 15, wherein the amount of change in offset variation per unit temperature in the operating temperature band of the sensor is substantially equal.
The described sensor.