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JP2568301Y2 - IC chip mounting structure to wiring board - Google Patents

IC chip mounting structure to wiring board

Info

Publication number
JP2568301Y2
JP2568301Y2 JP1991097288U JP9728891U JP2568301Y2 JP 2568301 Y2 JP2568301 Y2 JP 2568301Y2 JP 1991097288 U JP1991097288 U JP 1991097288U JP 9728891 U JP9728891 U JP 9728891U JP 2568301 Y2 JP2568301 Y2 JP 2568301Y2
Authority
JP
Japan
Prior art keywords
chip
wiring board
heat
diffusion plate
heat dissipating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1991097288U
Other languages
Japanese (ja)
Other versions
JPH0538981U (en
Inventor
直弥 中安
Original Assignee
日本セメント株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本セメント株式会社 filed Critical 日本セメント株式会社
Priority to JP1991097288U priority Critical patent/JP2568301Y2/en
Publication of JPH0538981U publication Critical patent/JPH0538981U/en
Application granted granted Critical
Publication of JP2568301Y2 publication Critical patent/JP2568301Y2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body

Landscapes

  • Cooling Or The Like Of Electrical Apparatus (AREA)

Description

【考案の詳細な説明】[Detailed description of the invention]

【0001】[0001]

【産業上の利用分野】本考案は、配線基板に装着される
ICチップの放熱構造に関し、特に、高出力用ICチッ
プのものに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat dissipation structure for an IC chip mounted on a wiring board, and more particularly to a high-output IC chip.

【0002】[0002]

【従来の技術】電子機器に用いられるICチップは、稼
働に伴って発熱する。その熱は、ICチップの装着密度
にもよるが、100℃以上に達する場合もあり、ICチ
ップ自身の損傷や回路に誤動作を与える要因となる。そ
のため、従来はICチップ装着配線基板を製造するにあ
たり、ICチップ表面温度が少なくとも85℃以下にな
るように、種々の工夫がなされている。
2. Description of the Related Art An IC chip used in electronic equipment generates heat as it operates. The heat may reach 100 ° C. or more, depending on the mounting density of the IC chip, and may cause damage to the IC chip itself or malfunction of the circuit. Therefore, conventionally, in manufacturing an IC chip mounting wiring board, various devices have been devised so that the surface temperature of the IC chip is at least 85 ° C. or lower.

【0003】従来、この種の放熱のための配線基板への
ICチップ取付構造の一例として、図2に示されるもの
がある。同図において、4層からなる多層配線基板1の
最下層基板1a上に、ICチップ2をはんだ付け、又は
共晶を用いて配設し、該ICチップ2から発生した熱
を、前記最下層基板1aの貫通穴3に充填した熱良導体
(例えば銀、銅、モリブデン、タングステンなど)4を
介して、前記配線基板1の裏面に被着したアルミニウム
放熱板5に放散している。なお、前記ICチップ2と前
記配線基板1とは、ワイヤボンダによる導線6で接続さ
れている。(実開平2−106856号公報)
FIG. 2 shows an example of a conventional structure for attaching an IC chip to a wiring board for this type of heat radiation. In FIG. 1, an IC chip 2 is mounted on a lowermost substrate 1a of a multilayer wiring board 1 composed of four layers by soldering or eutectic, and heat generated from the IC chip 2 is transferred to the lowermost layer. The heat is radiated to the aluminum radiator plate 5 attached to the back surface of the wiring board 1 via a good thermal conductor (for example, silver, copper, molybdenum, tungsten, etc.) 4 filled in the through hole 3 of the board 1a. The IC chip 2 and the wiring board 1 are connected by a conductive wire 6 using a wire bonder. (Japanese Utility Model Laid-Open No. 2-106856)

【0004】[0004]

【考案が解決しようとする課題】しかしながら、従来の
前記ICチップ2の取付構造においては、ICチップ2
が高出力用のものでは発熱量が大きく、そのためICチ
ップ2と前記最下層基板1aとの間の熱膨張の差による
熱応力が発生し、ICチップ2が該基板1aから剥離す
るという問題点があった。
However, in the conventional mounting structure of the IC chip 2, the IC chip 2
However, in the case of the high output type, a large amount of heat is generated, so that thermal stress is generated due to a difference in thermal expansion between the IC chip 2 and the lowermost substrate 1a, and the IC chip 2 is separated from the substrate 1a. was there.

【0005】また、前記最下層基板1aに設けられた熱
良導体4と被着されたアルミニウム放熱板5では高出力
用のICチップ2から発生した熱を十分放散できないと
いう問題点もあった。
In addition, there is a problem that the heat generated from the high-output IC chip 2 cannot be sufficiently dissipated by the good thermal conductor 4 provided on the lowermost substrate 1a and the attached aluminum radiator plate 5.

【0006】本考案はかかる点に鑑みてなされたもの
で、その目的は前記問題点を解消し、高出力用ICチッ
プが剥離しない取り付けであり、かつ同ICチップから
発生する熱を効率よく放熱できる配線基板へのICチッ
プ取付構造を提供することにある。
[0006] The present invention has been made in view of the above points, and an object of the present invention is to solve the above-mentioned problems, to provide a high-output IC chip that does not peel off, and to efficiently radiate heat generated from the IC chip. It is an object of the present invention to provide a structure for mounting an IC chip to a wiring board which can be mounted.

【0007】[0007]

【課題を解決するための手段】前記目的を達成するため
の本考案の構成は、次の(1)および(2)のとおりで
ある。 (1) 配線基板に装着されるICチップを配設するた
めの空間に該ICチップが配設され、前記配線基板の一
方の面に、該ICチップに接合された熱拡散部材を介し
放熱部材を固着するICチップ取付構造において、前
記熱拡散部材がけい素材からなる熱拡散板であり、該熱
拡散板をその平面方向の熱膨張に対して伸縮可能に保持
する前記放熱部材を、前記熱拡散板とともに前記配線基
板に固着することを特徴とする。
The structure of the present invention for achieving the above object is as follows (1) and (2). (1) said IC chip is disposed in a space for disposing the IC chip mounted on the wiring substrate, on one surface of the wiring board, heat dissipation through the heat diffusion member which is joined to the IC chip In the IC chip mounting structure for fixing a member , the heat dissipating member is a heat diffusing plate made of a silicon material, and the heat dissipating member for holding the heat dissipating plate so as to be able to expand and contract with respect to thermal expansion in a plane direction thereof, It is characterized by being fixed to the wiring board together with the heat diffusion plate.

【0008】(2) 前記(1)の前記熱拡散板は、熱
膨張係数がけい素材に近いもので、熱伝達率が配線基板
材より同等以上のものからなることを特徴とする。
(2) The heat diffusion plate of (1) is characterized by having a thermal expansion coefficient close to that of a silicon material and having a heat transfer coefficient equal to or higher than that of a wiring board material.

【0009】[0009]

【作用】本考案は以上説明したように構成されているの
で、ICチップは接合された熱拡散板を介して間接的に
配線基板に取り付けられるとともに、該熱拡散板はIC
チップと同材質のけい素材又は、熱膨張係数がけい素材
に近いものからなるので、ICチップと前記熱拡散板と
の間では熱膨張による熱応力は発生せず、互いに剥離す
ることはない。
Since the present invention is constructed as described above, the IC chip is indirectly attached to the wiring board via the bonded heat diffusion plate, and the heat diffusion plate is
Since the silicon chip is made of the same material as the chip or one having a thermal expansion coefficient close to that of the silicon material, no thermal stress is generated between the IC chip and the thermal diffusion plate due to thermal expansion, and the chips are not separated from each other.

【0010】また、前記ICチップで発生した熱は、前
記熱拡散板を介して、放熱部材にて効率的に放熱され
る。なお、前記熱拡散板は、その平面方向の熱膨張に対
して伸縮可能に、前記放熱部材に保持されるので、前記
熱拡散板の熱膨張による平面方向の応力の影響は全くな
い。
The heat generated by the IC chip is efficiently radiated by the heat radiating member via the heat diffusion plate. Since the heat diffusion plate is held by the heat radiating member so as to be able to expand and contract with respect to the thermal expansion in the plane direction, there is no influence of the stress in the plane direction due to the thermal expansion of the heat diffusion plate.

【0011】[0011]

【実施例】以下、図面に基づいて本考案の好適な実施例
を例示的に詳しく説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be illustratively described in detail below with reference to the drawings.

【0012】図1は本考案の配線基板へのICチップ取
付構造の一実施例を示す断面図である。
FIG. 1 is a sectional view showing an embodiment of a structure for attaching an IC chip to a wiring board according to the present invention.

【0013】図において、多層(本実施例では3層)配
線基板11内には、高出力用、例えば公称20W以上の
ICチップ12を配設できるように、図で上下方向に貫
通した空間13が設けられている。
In the drawing, a space 13 vertically penetrated in the drawing is provided in a multilayer (three in this embodiment) wiring board 11 so that an IC chip 12 for high output, for example, a nominal 20 W or more can be disposed. Is provided.

【0014】前記配線基板11の材質は、通常用いられ
るアルミナ、ムライト、コージライト、窒化アルミニウ
ム等、あるいはそれらとガラス粉末とを組み合せたもの
である。前記配線基板11を作製するには、焼成して基
板11を得る前のグリーンシートに、あらかじめICチ
ップ12が装着される位置に、パンチングマシンを用
い、基板各層に段差をつけた貫通空間13を設けて焼成
する。
The material of the wiring board 11 is usually used alumina, mullite, cordierite, aluminum nitride, or the like, or a combination thereof with glass powder. In order to manufacture the wiring substrate 11, a through-hole 13 having a step in each layer of the substrate is formed on a green sheet before firing to obtain the substrate 11 by using a punching machine at a position where the IC chip 12 is mounted in advance. Provide and fire.

【0015】前記ICチップ12は、該チップ材質と同
一材質のけい素材からなる円形、又は多角形状の熱拡散
板14上に、はんだ付け、又は共晶により接合して、取
り付けられる。ICチップ12が取り付けられた該熱拡
散板14は、放熱フィン15に設けられた凹部15a
に、その平面方向の熱膨張に対して伸縮できるように、
耐熱性クッション16および間隙17を介して、収容、
保持される。
The IC chip 12 is mounted on a circular or polygonal heat diffusion plate 14 made of the same silicon material as the chip material by soldering or eutectic bonding. The heat diffusion plate 14 to which the IC chip 12 is attached is provided with a concave portion 15 a provided in the radiation fin 15.
In order to be able to expand and contract against thermal expansion in the plane direction,
Accommodation through a heat-resistant cushion 16 and a gap 17,
Will be retained.

【0016】このようにICチップ12及び熱拡散板1
4を保持した前記放熱フィン15を、前記配線基板11
の前記貫通空間13に該ICチップ12が配設されるよ
うに、該配線基板11の下面11aに固定する。すなわ
ち、前記配線基板11の下面11aに、前記熱拡散板1
4を押圧しながら、該基板11に設けられた貫通穴11
bを介して、前記放熱フィン15を取り付けねじ18に
より固定する。
As described above, the IC chip 12 and the heat diffusion plate 1
The radiation fin 15 holding the wiring board 4 is connected to the wiring board 11.
The IC chip 12 is fixed to the lower surface 11 a of the wiring board 11 so that the IC chip 12 is disposed in the through space 13. That is, the heat diffusion plate 1 is provided on the lower surface 11a of the wiring board 11.
4 while pressing through holes 11 formed in the substrate 11.
The heat radiation fins 15 are fixed by mounting screws 18 through the “b”.

【0017】なお、19は導線で、前記ICチップ12
と配線基板11とをワイヤボンダによって接続する。2
0は耐熱性クッション、21は他のIC、又はチップ部
品である。
Reference numeral 19 denotes a conductor, and the IC chip 12
And the wiring board 11 are connected by a wire bonder. 2
0 is a heat-resistant cushion, 21 is another IC or chip component.

【0018】ところで、前記熱拡散板14は、その材質
がけい素材のほか、熱膨張係数がけい素材に近いもので
あり、かつ熱伝達率がけい素材又は配線基板材に比べて
同等以上のものが好ましい。例えば、この種の材質とし
ては表1のようなものがある。
The heat diffusion plate 14 has a thermal expansion coefficient close to that of the silicon material and a heat transfer coefficient equal to or higher than that of the silicon material or the wiring board material in addition to the silicon material. Is preferred. For example, there is a material shown in Table 1 as this kind of material.

【0019】[0019]

【表1】 [Table 1]

【0020】前記けい素材は半導体であるため、けい素
材からなる熱拡散板14の全表面に酸化けい素膜を形成
させておけば、絶縁体として利用することもできる。
Since the silicon material is a semiconductor, it can be used as an insulator if a silicon oxide film is formed on the entire surface of the thermal diffusion plate 14 made of the silicon material.

【0021】なお、本考案の技術は前記実施例における
技術に限定されるものではなく、同様な機能を有する他
の態様の手段によってもよく、また本考案の技術は前記
構成の範囲内において種々の変更、付加が可能である。
Note that the technique of the present invention is not limited to the technique in the above-described embodiment, but may be implemented by means of another embodiment having the same function. Can be changed or added.

【0022】[0022]

【考案の効果】以上の説明から明らかなように本考案の
配線基板へのICチップ取付構造によれば、該ICチッ
プにけい素材、又は熱膨張係数がけい素材に近いもので
あり、かつ熱伝達率がけい素材又は配線基板材と同等以
上のものからなる熱拡散板をはんだ付け、又は、共晶に
より接合し、該熱拡散板の平面方向の熱膨張に対して伸
縮可能に保持する放熱部材を、配線基板に、前記熱拡散
板とともに固着するので、高出力用ICチップは、前記
配線基板に間接的に取り付けられ、発熱により該配線基
板との剥離は全くなくなり、高出力用ICチップに適し
た取付構造となる。
As is clear from the above description, according to the structure for attaching an IC chip to a wiring board of the present invention, the IC chip has a silicon material or a thermal expansion coefficient close to that of the silicon material, A heat dissipating plate made of a material having a transmissivity equal to or greater than that of a silicon material or a wiring board material is soldered or joined by eutectic so that the heat dissipating plate can expand and contract with respect to the thermal expansion in the plane direction of the heat diffusing plate. Since the member is fixed to the wiring board together with the heat diffusion plate, the high-output IC chip is indirectly attached to the wiring board, and there is no separation from the wiring board due to heat generation. Mounting structure suitable for

【0023】同時に、ICチップからの熱を効率よく放
熱でき、高出力用ICチップが高温になることもなく、
同ICチップの損傷や誤動作をなくすことができる。
At the same time, the heat from the IC chip can be efficiently radiated, and the high-output IC chip does not become hot.
Damage and malfunction of the IC chip can be eliminated.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本考案の配線基板へのICチップ取付構造の一
実施例を示す断面図である。
FIG. 1 is a sectional view showing an embodiment of a structure for mounting an IC chip to a wiring board according to the present invention.

【図2】従来の配線基板へのICチップ取付構造の断面
図である。
FIG. 2 is a cross-sectional view of a conventional structure for mounting an IC chip on a wiring board.

【符号の説明】[Explanation of symbols]

11 多層配線基板 12 ICチップ 13 貫通空間 14 熱拡散板 15 放熱フィン 15a 凹部 16 耐熱性クッション 17 間隙 DESCRIPTION OF SYMBOLS 11 Multilayer wiring board 12 IC chip 13 Penetration space 14 Heat diffusion plate 15 Heat radiating fin 15a Depression 16 Heat resistant cushion 17 Gap

Claims (2)

(57)【実用新案登録請求の範囲】(57) [Scope of request for utility model registration] 【請求項1】 配線基板に装着されるICチップを配設
するための空間に該ICチップが配設され、前記配線基
板の一方の面に、該ICチップに接合された熱拡散部材
を介して放熱部材を固着する構造において、 前記熱拡散部材がけい素材からなる熱拡散板であり、該
熱拡散板をその平面方向の熱膨張に対して伸縮可能に保
持する前記放熱部材を、前記熱拡散板とともに前記配線
基板に固着することを特徴とする配線基板へのICチッ
ブ取付構造。
An IC chip is disposed in a space for disposing an IC chip to be mounted on a wiring board, and is provided on one surface of the wiring board via a heat diffusion member joined to the IC chip. The heat dissipating member is a heat dissipating plate made of a silicon material, and the heat dissipating member for holding the heat dissipating plate so as to be able to expand and contract with respect to thermal expansion in a plane direction thereof is formed by the heat dissipating member A structure for attaching an IC chip to a wiring board, wherein the IC chip is fixed to the wiring board together with a diffusion plate.
【請求項2】 前記熱拡散板は、熱膨張係数がけい素材
に近いもので、熱伝達率が配線基板材より同等以上のも
のからなることを特徴とする請求項1の配線基板へのI
Cチップ取付構造。
2. The wiring board according to claim 1, wherein the heat diffusion plate has a coefficient of thermal expansion close to that of the silicon material and has a heat transfer coefficient equal to or higher than that of the wiring board material.
C chip mounting structure.
JP1991097288U 1991-10-30 1991-10-30 IC chip mounting structure to wiring board Expired - Fee Related JP2568301Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1991097288U JP2568301Y2 (en) 1991-10-30 1991-10-30 IC chip mounting structure to wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1991097288U JP2568301Y2 (en) 1991-10-30 1991-10-30 IC chip mounting structure to wiring board

Publications (2)

Publication Number Publication Date
JPH0538981U JPH0538981U (en) 1993-05-25
JP2568301Y2 true JP2568301Y2 (en) 1998-04-08

Family

ID=14188323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1991097288U Expired - Fee Related JP2568301Y2 (en) 1991-10-30 1991-10-30 IC chip mounting structure to wiring board

Country Status (1)

Country Link
JP (1) JP2568301Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5939102B2 (en) * 2012-09-18 2016-06-22 富士通株式会社 Electronics

Also Published As

Publication number Publication date
JPH0538981U (en) 1993-05-25

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