JP2566480Y2 - Bridge type semiconductor device - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bridge type semiconductor device.

[0002]

2. Description of the Related Art As shown in FIG. 1, a conventional bridge type semiconductor device in which four diode chips are mounted with the same polarity is a diode rectifier mounted on four metal electrode plates to obtain a semiconductor rectifier. The size of the diode chip varies from product to product along with the flow of the market for high-mix low-volume production, and in particular, the outer shape of the semiconductor chip tends to increase in recent years.

[0003]

However, it is not easy to manufacture a metal electrode plate, and it is expensive and troublesome. In addition, since there is not enough space for mounting the diode chip, it is necessary to newly manufacture a metal electrode plate when the outer shape of the diode chip becomes large. Further, two types of metal electrode plates are required for a diode chip having the same size as a diode chip having an N-type upper surface and a diode chip having a P-type upper surface.

[0004]

[Purpose of the Invention] The present invention is easy to manufacture and can cope with a slight change in chip size. In addition, when the N (cathode) surface is turned up and the polarity of the four diode chips is aligned to form a bridge, It is an object of the present invention to provide a semiconductor device which can mount a chip with the same metal electrode plate even when a bridge is assembled by aligning the polarity of four diode chips with the (anode) surface facing upward.

[0005]

FIG. 1 shows a conventional semiconductor device, FIG. 2 shows an embodiment of the semiconductor device of the present invention in which the P surface of the diode chip is up, and FIG. 3 shows an embodiment of the semiconductor device of the present invention in which the N surface of the diode chip is up. .

1 to 3, reference numeral 1 denotes an external lead;
Denotes a metal electrode plate, 3 denotes a diode chip, and 4 denotes a connector.

Conventionally, in a semiconductor device, there was no space for mounting two diode chips on all four metal electrode plates, but in the present invention, a space is provided for mounting at least two diode chips on all metal electrode plates. Then, by changing the mounting position of the diode chip between when the P surface of the diode chip is turned up and when the N surface is turned up, the type in which the diode chip is mounted on the N surface and the diode which is mounted on the P surface are A semiconductor device on which a chip is mounted can mount a diode chip on the same metal electrode plate.

Further, in the present invention, since the area utilization rate of the conventional semiconductor device was poor, the shape of the metal plate was changed as shown in FIGS. 2 and 3 in order to improve it. FIG. 2 shows an example in which all four diode chips are mounted with the P surface facing up.
FIG. 3 shows an example in which all four diode chips are mounted with the N surface facing up.

[0009]

[Effects of the Invention] A bridge is formed by aligning the polarities of four diode chips with the N (cathode) surface facing up,
The same metal electrode plate enables chip mounting even when a bridge is assembled with the polarity of the four diode chips aligned with the P (anode) surface facing up. The metal electrode plate for the P surface and the metal electrode for the N surface A diode bridge can be assembled with a common metal electrode plate without preparing two metal electrode plates. Further, the metal electrode plate can be easily manufactured, and the structure is such that the same metal electrode plate can cope with a slight change in chip size.

[Brief description of the drawings]

FIG. 1 shows a conventional bridge-type semiconductor device having an upper P-plane.

FIG. 2 is a diagram showing a semiconductor device in which the P-plane of the present invention has an upper bridge

FIG. 3 is a diagram showing an N-side upper bridge type semiconductor device according to the present invention;

[Explanation of symbols]

 1a-1d External lead 2 Metal electrode plate 3 Diode chip 4 Connector

Claims (1)

(57) [Scope of request for utility model registration] 1. A dual in-line bridge type semiconductor device in which four diode chips to be mounted are mounted with the same polarity, and a space having a space in which at least two diode chips can be mounted at least on the left and right.
Two metal electrode plates are arranged two above and two below, and the four metal electrode plates are clockwise clockwise from the upper left at 1a, 1b, 1c, 1
Assuming that d is the anode, the diode chip is not mounted on the metal electrode plate 1a when the anode of the diode chip is turned upward, and two diode chips are mounted on the metal electrode plate 1b.
The anode of the right diode chip is a metal electrode plate c.
The anode of the left diode chip is connected to the right side of the metal electrode plate 1a. The metal electrode plate 1c has a diode chip mounted on the left side of the metal electrode plate. The anode of the diode chip is a metal electrode plate. 1a, the metal electrode plate 1d has a diode chip mounted on the left side of the metal electrode plate, the anode of the diode chip is connected to the left side of the metal electrode plate 1a, and the cathode of the diode chip faces up. Has two diode chips mounted on the metal electrode plate 1a, the cathode of the right diode chip is connected to the left side of the metal electrode plate 1c, and the cathode of the left diode chip is connected to the left side of the metal electrode plate 1d. A diode chip is not mounted on the metal electrode plate 1b, and a diode chip is mounted on the right half of the metal electrode plate on the metal electrode plate 1c. The cathode of the diode chip is connected to the right side of the metal electrode plate 1b, the metal electrode plate 1d has a diode chip mounted on the right side of the metal electrode plate, and the cathode of the diode chip is connected to the left side of the metal electrode plate 1b. Thus, the bridge-type semiconductor device is characterized in that it is possible to form a bridge with the same metal electrode plate whether the four diode chips are all on the anode or all the cathodes are on.