JP2565156Y2 - Semiconductor manufacturing apparatus and wafer mounting table thereof - Google Patents

Description

[Detailed description of the invention]

[0001]

The present invention relates to a semiconductor manufacturing apparatus and its
Related to the wafer mounting table.

[0002]

2. Description of the Related Art A single-wafer type CV which is one of semiconductor manufacturing apparatuses.
D (Chemical VaporDiposition)
n) The apparatus mounts a wafer on a wafer stage in a vacuum processing chamber, generates plasma in a low-pressure reaction gas atmosphere, or
Is for heating a wafer and subjecting the wafer to a CVD process. In such a CVD apparatus, heating and cooling of the wafer are performed according to the processing conditions of the wafer, and the heating and cooling of the wafer are performed through the wafer mounting table.

As described above, the heating of the wafer is performed through the wafer stage, and the temperature control of the wafer greatly affects the processing quality of the wafer. Therefore, the zone temperature of the wafer stage is controlled.

A wafer stage of a conventional single wafer type CVD apparatus will be described with reference to FIGS.

A heater table 1 is provided with a wafer table 2,
A peripheral ring 3 is provided at a peripheral end portion around the wafer table 2, and a heat radiation shielding plate 4 is provided around the peripheral ring. The wafer mounting table 2 is concentrically divided into an outer circle 5, an intermediate section 6, and a central section 3, and the wafer mounting table 2 forms a discontinuous portion in the radial direction with respect to heat transfer, thereby enabling zone temperature control. ing. Also, the heater table 1 has heaters 8 corresponding to the respective outer circle portions 5, the intermediate portion 6, and the center portion 7 of the wafer mounting table 2.
Temperature control is performed so that the temperatures of the outer circle portion 5, the intermediate portion 6, and the center portion 7 of the wafer mounting table 2 are made uniform by controlling the energization state of the heaters 8, 9, and 10. Then, the wafer 11 placed on the wafer table 2 is uniformly heated via the wafer table 2.

The heat radiation shielding plate 4 is provided with a through hole 12 at a required position to evacuate the processing chamber.

[0007]

However, the above-mentioned CVD
When the apparatus is continuously operated, reaction products adhere to the surface of the wafer table 2 and the surface of the heater table 1, particularly to the peripheral portion, and the reaction products gradually adhere to the surface of the heater table 1 from the peripheral portion. Therefore, the amount of heat radiation from the heaters 8, 9, and 10 is reduced.

The heating state will be described with reference to FIGS. 5 and 6. The temperature distribution curve of the wafer stage 2 at first was shown by the solid line in FIG. 5, but the amount of heat radiation decreased due to the adhesion of reaction products. , The temperature drops to the state shown by the broken line. Due to such a change in the temperature distribution of the wafer table 2, the temperature distribution of the wafer 11 changes from the solid line state in FIG. 6 to the broken line state.

Accordingly, the temperature of the wafer 11 decreases and the uniformity of the temperature distribution of the wafer 11 is lost. For this reason, there has been a problem that the uniformity of the film thickness formed on the wafer 11 decreases and the film forming speed decreases.

[0010] The present invention has been made in view of the such circumstances, even when the CVD apparatus was operated continuously, it no CVD apparatus and its uniformity of the temperature distribution of the wafer during wafer processing is changed
Is intended to provide a wafer mounting table.

[0011]

SUMMARY OF THE INVENTION The present invention is directed to a wafer mounting table of a semiconductor manufacturing apparatus in which a wafer mounting table is divided concentrically and zone heat is controlled by concentrically divided heaters. Polymerizing at least a part of
Of a semiconductor manufacturing apparatus in which heat transfer is performed in the polymerization section.
Related to the wafer stage, divided into concentric shapes, and concentric
Wafer zone heat controlled by heater divided into
In the semiconductor manufacturing equipment having a table, each divided part
At least a part of the polymer is polymerized, and heat transfer is performed in the polymerized part.
The present invention relates to a semiconductor manufacturing apparatus configured as described above .

[0012]

[Action] By controlling the zone temperature of the wafer mounting table by the heater and causing the divided portions to mutually affect each other,
The temperature distribution of the wafer is made uniform.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

In FIG. 1, the same components as those shown in FIG. 4 are denoted by the same reference numerals, and description thereof will be omitted.

The wafer table 13 is moved to the outer circle portion 14 and the intermediate portion 1
5, the central portion 16; and the intermediate portion 15 further includes an inner intermediate portion 15a and an outer intermediate portion 15b.

A center hole 17 is formed in the outer circular portion 14, and a disc-shaped recess 18 is formed around the center hole 17.

The outer intermediate portion 15b has a step at the inner edge, the inner intermediate 15a has an eave at the outer edge, and the inner intermediate 15a and the outer intermediate 15b have an eave and a step. Are fitted together and integrated to form the intermediate portion 15.

The center 16 has a reverse convex shape in cross section, and a projection at the center fits into the center hole 17.

Thus, the intermediate portion 15 is fitted in the concave portion 18, and the central portion 16 is fitted in the central hole 17 and is fitted in the intermediate portion 15 to form the wafer mounting table 13. ing.

The position of the inner periphery of the heater 8 and the position of the outer periphery of the heater 9 substantially coincide with the position of the outer peripheral wall of the recess 18.
The position of the inner periphery of the heater 9 and the position of the outer periphery of the heater 10 substantially coincide with the position of the inner periphery of the intermediate portion 15 and the position of the outer periphery of the central portion 16.

In the above configuration, the heaters 8, 9, 1
When the amount of heat is controlled by controlling the amount of electricity supplied to the heaters 8, 9, and 10, the outer circle portion 14 is directed toward the center in a state where the outer circle portion 14 overlaps the intermediate portion 15 and a part of the center portion 16. The heat at the outer peripheral portion of the wafer mounting table 13 is easily transferred to the inner peripheral portion, and when the amount of heat received at the outer peripheral portion is large, the heat received at the outer peripheral portion is reduced by the outer circular portion 14. It moves to the center side via the extension.

Further, since the intermediate portion 15 is divided into the inner intermediate portion 15a and the outer intermediate portion 15b as described above, there is a discontinuous portion for heat transfer inside the intermediate portion 15a and the inner intermediate portion 15a. Smooth heat transfer between the outer intermediate portions 15b is hindered. Further, the inner intermediate portion 15a and the outer intermediate portion 1
Since the lower surface of 5b is in contact with the extended portion of the outer circle portion 14, the inner intermediate portion 15a and the outer intermediate portion 15b receive heat from the extended portions, respectively, Subject to thermal effects.

The size of the contact area between the outer intermediate portion 15b, the inner intermediate portion 15a, and the center portion 16 which is in contact with the extending portion of the outer circle portion 14 is determined according to the outer intermediate portion 15b> the inner intermediate portion 15a>, With the central portion 16, more heat is received on the outer diameter side.

Next, the temperature distribution of the wafer table 13 and the wafer 11 in this embodiment will be described with reference to FIGS.

The temperature distribution of the wafer stage 13 is initially shown in FIG.
Is the solid line, the amount of heat radiation decreases due to the adhesion of the reaction product, and the temperature drops to the state shown by the broken line. However, looking at the entire temperature distribution, it is in a state of being substantially translated. Due to such a change in the temperature distribution of the wafer table 13, the temperature distribution of the wafer 11 changes from the solid line state in FIG. 3 to the broken line state. The temperature change of the wafer 11 is also substantially parallel movement, and the uniformity of the temperature distribution of the wafer 11 is not broken.

In the present invention, the difference in heat reception between the outer peripheral portion and the inner peripheral portion of the heater base 1 is averaged by forming a superimposed portion between the outer circle portion 14, the middle portion 15, and the center portion 16. Therefore, it is needless to say that various modes of polymerization can be considered.

[0027]

According to the present invention, as described above, the following excellent effects are exhibited.

Even when the CVD process is continuously performed and the temperature of the peripheral portion is significantly lowered due to the adhesion of the reaction product or the heat radiation state is changed, the temperature uniformity of the wafer is maintained.

The decrease in the wafer temperature during the processing can be easily dealt with by increasing the calorific value of the heater.

Further, since the wafer temperature decreases proportionally without a change in the temperature distribution, a power supply amount to the heater for temperature control and a correction value table between the wafer temperature can be easily created.

Since the change in the temperature distribution of the wafer over time can be prevented, the film thickness of the wafer subjected to the CVD process in the continuous operation can be made uniform, thereby improving the processing accuracy and the yield.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention.

FIG. 2 is a diagram showing a temperature distribution of a wafer stage in the embodiment.

FIG. 3 is a diagram showing a temperature distribution of a wafer in the embodiment.

FIG. 4 is an explanatory sectional view showing a conventional example.

FIG. 5 is a diagram showing a temperature distribution of a wafer stage in the conventional example.

FIG. 6 is a diagram showing a temperature distribution of a wafer in the conventional example.

[Explanation of symbols]

 8 Heater 9 Heater 10 Heater 11 Wafer 13 Wafer Stand 14 Outer Circle 15 Middle 16 Central

Claims (2)

(57) [Scope of request for utility model registration] 1. A semiconductor device in which a wafer table is divided concentrically and zone heat is controlled by concentrically divided heaters.
A wafer mounting table for a semiconductor manufacturing apparatus , wherein at least one part of each divided portion is superimposed on the wafer mounting table of the body manufacturing apparatus , and heat transfer is performed in the superposed section. 2. In a semiconductor manufacturing apparatus having a wafer stage which is concentrically divided and which is zone-heat-controlled by a concentrically divided heater, at least one part of each divided part is polymerized, and A semiconductor manufacturing apparatus wherein heat transfer is performed in a section.