JP2546500B2 - Film thickness measurement method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film thickness measuring method and apparatus, and more particularly to a method for measuring the film thickness of a film formed on a part of a substrate.

[0002]

2. Description of the Related Art The principle of a conventional film thickness measuring method using an electron beam will be described. When a substance is irradiated with an electron beam accelerated by a predetermined acceleration voltage, the arrival depth at which the electron beam penetrates the substance is related to the density and the acceleration voltage specific to the substance, and therefore the arrival depth. The shallower the material, the larger the reflected electrons. Therefore, the penetration depth and the amount of backscattered electrons of the substance can be measured by measuring the backscattered electrons of the substances having different densities in advance using the acceleration voltage as a parameter. The film thickness can be measured by comparing the relationship between the penetration depth and the amount of reflected electrons with the reflected electrons from the film actually formed on the substrate.

FIG. 5 shows a conventional method for measuring the film thickness using an electron beam. When the thin film 12 is formed on the silicon substrate 11 and the film thickness of the thin film 12 is measured, the film thickness of the thin film formed on the substrate is changed in advance, and the electron beam accelerated by a predetermined acceleration voltage on the film surface. Then, a calibration curve (FIG. 6) of the amount of backscattered electrons from the film and the film thickness is obtained.

The calibration curve will be described with reference to the calibration curve diagram of FIG. 6 showing the relationship between the molybdenum film thickness and the amount of backscattered electrons when the molybdenum film is formed on the silicon substrate. When the molybdenum film is a thin film, when the surface of the molybdenum film is irradiated with an electron beam, the amount of reflected electrons varies depending on the thickness of the molybdenum film. Without the molybdenum film, the reflected electron amount of the electron beam reflected only by the silicon substrate is measured as shown in the calibration curve, and when the thickness of the molybdenum film increases, both the silicon substrate and the molybdenum film show as shown in. The amount of reflected electrons of the reflected electron beam is measured. When the molybdenum film becomes thicker, the amount of backscattered electrons of the electron beam reflected by the molybdenum film is measured. After that, even if the molybdenum film becomes thick, the amount of backscattered electrons does not change and remains constant. Therefore, the amount of backscattered electrons when the thickness of the molybdenum film is changed is measured to obtain a calibration curve, which is used as a reference.

In actual film thickness measurement on a silicon substrate, a thin film 12 formed on a silicon substrate 11 is irradiated with an electron beam 13 accelerated by a predetermined acceleration voltage, and the film is reflected by the electron beam irradiation. After measuring the electron flow 14,
The thickness of the thin film is detected by comparing the measured backscattered electron flow 14 with a calibration curve obtained in advance (for example, see Japanese Patent Laid-Open No. 62-12808).

[0006]

In the conventional film thickness measuring method using the electron beam, the calibration curve was measured in order to determine the predetermined film thickness on the substrate from the calibration curve of the reflected electron amount and the film thickness. It was necessary to measure the backscattered electron flow from the flat film surface on the substrate under the same conditions, and the film thickness to be measured had to be a thin film.

However, since the film on the substrate in the semiconductor manufacturing process has a concavo-convex pattern and a step, the amount of reflected electrons reflected by the concavo-convex pattern or the stepped portion is the same as the amount of reflected electrons from the flat substrate when the calibration curve is created. Differently, when the film on the substrate is thick, the amount of backscattered electrons does not change, so the calibration curve becomes constant, and the film thickness cannot be accurately detected based on the calibration curve.

Further, in creating the calibration curve based on the amount of reflected electrons and the film thickness, the thickness of the film formed on the substrate is changed for each type of substrate on which the film is formed, and the reflected electron is reflected. There was a problem that the quantity had to be measured.

An object of the present invention is to provide a film thickness measuring method for measuring the thickness of a film on a substrate from the time difference of flight of electrons reflected respectively on the substrate and the film surface on the substrate. is there.

[0010]

In order to achieve the above object, a film thickness measuring method according to the present invention performs an electron beam irradiation process and a film thickness measuring process to measure the film thickness of a film formed on a substrate. The electron beam irradiation process is a method of measuring a film thickness, in which electron beams are applied to a surface of a substrate and a film on the substrate from a predetermined position, and reflected electrons are reflected by the surface of the substrate and the film on the substrate. Is detected at a predetermined position, and the film thickness measurement process is a process of detecting a difference in flight distance between the two reflected electrons and calculating the difference in flight distance to measure the film thickness.

Further, the electron beam is deflected and the electron beam is individually applied to the surface of the substrate and the film on the substrate.

Further, the beam diameter of the electron beam is expanded and the electron beam is simultaneously irradiated to the substrate and the film on the substrate.

Further, in the film thickness measurement processing, the fact that the difference in the flight distance of the reflected electrons reflected by the surface of the substrate and the film of the substrate corresponds to the film thickness is obtained, and the flight distance difference is obtained from the electron velocity,
The film thickness is calculated according to the distance difference.

[0014]

In the film formed on the substrate, particularly the film having a large film thickness or the film having the uneven pattern and the steps, the surface of the film 17 having the pattern and the surface of the substrate 11 as shown in FIG.
The surface of the film 13 having a step and the surface of the substrate 11 are individually irradiated with an electron beam, and the reflected electrons reflected on the surfaces of the films 13 and 17 and the reflected electrons reflected on the surface of the substrate 11 respectively have predetermined positions. The thickness of the film is measured by detecting the time difference due to the difference in the flight distance to reach the electron detector.

[0015]

EXAMPLES The principle of film thickness measurement in the present invention will be described with reference to FIG. As shown in FIG. 1B, the surface of the substrate 11 and the surface of the film 13 having steps are irradiated with an electron beam 15 to which a low acceleration voltage is applied, so that the surface of the silicon substrate 11 and the surface of the film 13 are exposed. The backscattered electrons 14a that are respectively reflected by are detected by the backscattered electron detector 16.

The flight distance of the reflected electrons 14a reflected on the surface of the silicon substrate 11 to reach the reflected electron detector 16 is
Compared with the flight distance that the backscattered electrons 14 a reflected on the surface of the film 13 reach the backscattered electron detector 16, it becomes longer by about twice the thickness of the film 13. Therefore, using the time difference of flight due to the difference in the flight distance, the time difference of flight is measured with an oscilloscope, and the film thickness of the film 13 is calculated from the electron velocity of the reflected electrons 14. Similarly, when the film thickness of the film 17 having the pattern shown in FIG. 1A is also measured, the surface of the silicon substrate 11 and the surface of the film 17 are irradiated with the electron beam 15, and the reflected electrons reflected by the electron beam 15 are reflected. 14 is used to measure the film thickness.

Next, the film thickness measuring device will be described with reference to FIG. As shown in FIG. 2, a control electrode 19 and a polarizer 20 are installed between the electron gun 18 and the wafer stage 21. Further, a plurality of backscattered electron detectors 16 are provided above the wafer stage 21. A pulse voltage is applied between the electron gun 18 and the control electrode 19 to generate an electron beam pulse. The polarizer 20 individually irradiates the polarized electron beam 15 on the film 13 or 17 of FIG. 1 formed on the substrate 11 and the substrate 11. Electron beam on substrate 1
3 and a plurality of backscattered electron detectors 16 shown in FIG.
Detect by. Since the detected electrons have a flight time difference, the time difference can be measured by inputting them to an oscilloscope.

The measurement signal processing circuit will be described with reference to FIG. Pulses are simultaneously input from the pulse generator 31 to the electron gun 18 and the polarizer 20. The electron gun 18 generates a pulsed electron beam, and the pulse generator 3 is supplied to the polarizer 20.
The pulse from 1 is converted into a class function by the flip-flop circuit 32, and this is D / A converted by the D / A converter 33. As a result, the electron beam can be polarized and scanned with respect to the one-pulse electron beam. Furthermore, after D / A conversion,
In order to scan a region where reflected electrons can be detected from the surface of a predetermined substrate and the surface of a film formed on the substrate, the voltage is amplified by an amplifier 34 to a predetermined voltage and input to the polarizer 20.

The trigger pulse is input from the pulse generator 31 to the oscilloscope 35, and the signal of the backscattered electron detector 16 detected for each pulse of the electron beam is output to the oscilloscope 3.
Input and store in 5, and measure the time difference of flight of backscattered electrons.

Then, the flight distance difference is calculated from the known electron velocity from the flight time difference, and the film thickness is calculated.

The pulse signal electron beam is used in the measurement signal processing circuit of the first embodiment shown in FIG. 4, but the electron beam diameter is large enough to detect the reflected electrons from the substrate surface and the film surface formed on the substrate simultaneously. When the pulsed electron beam included therein is used, the resolution is lowered, but the time difference of flight can be measured with an oscilloscope as in the first embodiment.

[0022]

As described above, according to the present invention, the film thickness is measured from the time difference of flight of the reflected electrons on the substrate and the surface of the film thickness. Therefore, the calibration curve for the film thickness and the reflected electrons as in the conventional measuring method is required. Not. Moreover, in the conventional measurement method, when the film thickness is large, the amount of backscattered electrons is saturated, the film thickness cannot be read from the calibration curve, and the film thickness cannot be detected. Even thick film thickness can be measured.

Further, the film thickness of the film having the uneven pattern and the step formed on the substrate in the semiconductor manufacturing process is partially measured by defining the scanning range of the electron beam by using a polarizer. be able to.

[Brief description of drawings]

FIG. 1 is a principle explanatory view showing a film thickness measuring method of the present invention.

FIG. 2 is a sectional view of a film thickness measuring device.

FIG. 3 is a layout view of a backscattered electron detector when the film thickness measuring device shown in FIG. 2 is viewed from above.

4 is a diagram showing a measurement signal processing circuit of the film thickness measuring device shown in FIG.

FIG. 5 is a cross-sectional view showing a conventional film thickness measuring method using an electron beam.

FIG. 6 is a calibration curve diagram of the molybdenum film thickness formed on a silicon substrate and the amount of backscattered electrons.

[Explanation of symbols]

 11 Silicon Substrate 12 Thin Film 13 Stepped Film 14 Backscattered Electron Flow 14a Backscattered Electron 15 Electron Beam 16 Backscattered Electron Detector 17 Patterned Film 18 Electron Gun 19 Control Electrode 20 Polarizer 21 Wafer Stage

Claims (4)

(57) [Claims] 1. A method of measuring a film thickness of a film formed on a substrate by performing an electron beam irradiation process and a film thickness measurement process, wherein the electron beam irradiation process is performed by using an electron beam from a predetermined position. The process of irradiating the beam on the surface of the substrate and the film on the substrate and detecting the reflected electrons reflected by the surface of the substrate and the film on the substrate at a predetermined position. The film thickness measurement process is the flight of both reflected electrons. Detect the difference in distance,
A film thickness measuring method, characterized in that the film thickness is measured by calculating a difference in the flight distance. 2. The film thickness measuring method according to claim 1, wherein the electron beam is deflected and the electron beam is individually applied to the surface of the substrate and the film of the substrate. 3. The film thickness measuring method according to claim 1, wherein the beam diameter of the electron beam is expanded and the electron beam is simultaneously irradiated to the substrate and the film on the substrate. 4. The film thickness measurement process utilizes the fact that the difference in the flight distance of the reflected electrons reflected by the surface of the substrate and the film of the substrate corresponds to the film thickness, and the flight distance difference is obtained from the electron velocity. The film thickness measuring method according to claim 1, wherein the film thickness is calculated according to the distance difference.