JP2524733Y2 - Semiconductor device - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the structure of a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, when a semiconductor device is formed by using a semiconductor chip such as a diode, for example, as shown in a sectional structural view of FIG. 1, two metal members, three metal plates, one semiconductor chip, and The metal connectors of No. 4 are sequentially placed, and are fixed to each other by a brazing material layer of No. 5. The metal connector No. 4 is used for circuit connection means, mechanical connection means, thermal fatigue prevention means and the like, and uses a material such as copper having low electric resistance and high thermal conductivity. However, bubbles 6 are easily generated in the brazing material layer 5 between the metal connector 4 and the semiconductor chip 1. In the brazing of the metal connector 4, a flux is applied to improve the wettability of the brazing material, and the brazing material is fixed by heating and cooling, but before the brazing material is melted and solidified. Vapors such as flux remain and remain as bubbles 6. These bubbles are disadvantageous in that the reliability of the semiconductor device is deteriorated, for example, the thermal fatigue resistance is lowered.

[0003]

The object of the present invention is to solve the above-mentioned disadvantages of the conventional device,
An object of the present invention is to provide a semiconductor device having a reduced bubble generation rate and a long thermal fatigue life. Further, the present invention also provides a semiconductor device mounted on a printed wiring board or a radiation fin.

[0004]

FIG. 2 is a sectional structural view of an embodiment of the present invention.
1 denote the same parts. The second metal member constitutes a radiation fin made of aluminum or copper having a concave portion in which the metal plate 3 and the semiconductor chip 1 can be accommodated. The metal connector 4 has a through hole 4a as shown in FIG. 3A, a side view, FIG. 3B is a plan view, and FIG. 3C is a sectional structural view of FIG.

In manufacturing, a first brazing material, a metal plate 3, a second brazing material,
The semiconductor chip 1, the third brazing material, and the metal connector 4 are stacked and accommodated, and the first, second, and third brazing materials are melted by heating, and then solidified by cooling to perform brazing. I have.

Here, since the metal connector 4 has a through hole 4a in the brazing portion, vaporized substances such as flux which cause air bubbles during the period from melting to solidification of the brazing material are not passed through the through hole 4a.
a, it became easy to escape, and the generation of bubbles after solidification of the brazing material layer was significantly reduced.

Although the through hole 4a is shown as a circle in FIG. 3, it can be arbitrarily selected such as an oval or a square depending on the design. By selecting the diameter of the through hole 4a to be larger than the thickness of the metal connector 4, particularly good results were obtained in terms of press working and reduction of bubble generation. Further, a plurality of through holes 4a may be provided as necessary.

FIG. 4 is a sectional structural view of another embodiment of the present invention, and the same reference numerals as those in FIGS. 1, 2 and 3 denote the same parts.
The metal member 3 is made of aluminum or copper radiating fins having a concave shape and capable of accommodating the semiconductor chip 1.

FIG. 5 is a sectional structural view of another embodiment of the present invention, and a metal member 3 is a conductive layer provided on a substrate 7 of a printed wiring board. There are various types of printed wiring boards, for example, a ceramic substrate, an aluminum copper-clad board, glass, and an epoxy copper-clad laminate. The present invention can be applied to any printed wiring board. Reference numeral 8 denotes another electronic component provided on the substrate 7, which constitutes various composite or hybrid integrated circuit devices. 4 and 5 show the same operations and effects as those described in the embodiment of FIG.

FIGS. 6A and 6B are structural views of the metal connector used in FIG. 5, wherein FIG. 6A is a plan view, FIG. 6B is a side view, and FIG.

FIG. 7 shows another embodiment of the metal connector 4.
(A) is a side view, (b) is a plan view, and (c) is a cross-sectional view. The brazing portion of the metal connector 4 with the semiconductor chip 1 (the lower surface in FIG. 7A, the surface in FIG. 7B) is made convex, and a through hole 4a is provided at the center of the convex portion. .

With the use of the metal connector 4, air bubbles in the brazing material escape in both directions, that is, the air flowing upward through the through-hole 4a and the peripheral air during melting of the brazing material. Further promote reduction. Also, as shown in FIG. 7, a similar effect can be obtained by forming the brazing portion in a convex shape on the metal connector 4 as shown in FIG.

In the above description, the term "radiation fin" means a conductive material having a heat radiation effect, and does not specify a shape such as a case shape, a plate shape, and a pleated shape. Also, the shape of each part in the above-described embodiment and addition of other parts can be arbitrarily made within the scope of the present invention.

[0014]

As described above, the semiconductor device of the present invention reduces bubbles in the brazing layer, improves thermal fatigue performance, and is effective as a semiconductor device mounted on a radiation fin or a printed wiring board. It can be used in various electronic devices requiring high reliability, including electrical components, and has a large practical effect.

[Brief description of the drawings]

FIG. 1 is a sectional structural view of a conventional semiconductor device.

FIG. 2 is a sectional view showing an embodiment of the present invention.

FIG. 3 is a structural view of a metal connector used in FIG. 2 (a).
3B is a side view, FIG. 3B is a plan view, and FIG. 3C is a cross-sectional view of FIG.

FIG. 4 is a sectional structural view showing an embodiment of the present invention.

FIG. 5 is a sectional structural view showing an embodiment of the present invention.

FIG. 6 is a structural view of a metal connector used in FIG. 5 (a).
Is a plan view, (b) is a side view, and (c) is a cross-sectional view.

FIG. 7 is a structural view showing another embodiment of the metal connector;
(A) is a side view (b) is a plan view (c) is a cross-sectional view

[Explanation of symbols]

 1. Semiconductor chip 2. Metal member 3. Metal plate 4 Metal connector 4a. 4. Through hole for metal connector Brazing material layer 6. Air bubbles 7. Substrate 8. Other electronic components

Claims (5)

(57) [Scope of request for utility model registration] 1. A metal plate is fixed to one surface of a semiconductor chip and a metal connector is fixed to the other surface via a brazing material.
A semiconductor device, wherein a through hole is provided in a brazing portion of the metal connector to a semiconductor chip, and a part of a brazing material is inserted into the through hole. 2. The semiconductor device according to claim 1, wherein the metal plate is a conductive layer on the printed wiring board. 3. The semiconductor device according to claim 1, wherein said metal plate is a radiation fin. 4. The semiconductor device according to claim 1, wherein the metal plate is further fixed to the radiation fin via a brazing material. 5. The semiconductor device according to claim 1, wherein the brazing portion of the metal connector to the semiconductor chip is formed in a convex shape toward the metal plate, and the convex portion is provided with a through hole. The semiconductor device according to claim 4.