JP2510853Y2 - Hydrogen burner - Google Patents

Description

[Detailed description of the device] [Industrial applications]

The present invention relates to a water vapor diffusion device that performs heat treatment to form circuits such as IC and LSI on a semiconductor wafer.
In particular, it relates to improvements in hydrogen burners used in such equipment.

[Prior art]

Generally, a water vapor diffusion device is a device for reacting high-purity hydrogen and oxygen and performing heat treatment for oxidizing and diffusing the surface of a semiconductor wafer with the obtained high-purity water vapor. There are roughly two types of water vapor diffusion devices. One of them, as disclosed in Japanese Utility Model Publication No. 61-201341, is called an external combustion type, and is equipped with an external combustion device for reacting hydrogen and oxygen separately from a furnace body for heat treating a semiconductor wafer. The steam obtained by the external combustion device is led to the processing tube in the furnace body through the pipe,
A semiconductor wafer contained in a processing tube is subjected to a water vapor diffusion process. The other one is referred to as an internal combustion type as disclosed in Japanese Utility Model Laid-Open No. 63-131124, and unlike the external combustion type, an apparatus for reacting hydrogen and oxygen is provided in the furnace body, That is, the semiconductor wafer, which is provided in the processing tube and is accommodated in the processing tube, is directly subjected to heat treatment for water vapor diffusion.

[Problems to be solved by the device]

In both the external combustion type and the internal combustion type, a hydrogen burner is used in a device for reacting hydrogen and oxygen. This hydrogen burner ejects high-purity hydrogen from a crater in a high-purity oxidizing atmosphere and burns the hydrogen by an appropriate ignition means to generate high-purity steam.
Further, since minute circuits such as IC and LSI are formed on the surface of the semiconductor wafer, it is important that the processing gas, water vapor, be of high purity, and that high purity hydrogen and oxygen be reacted. Is essential. Further, since the hydrogen burner itself must not contaminate water vapor, it is formed of quartz so as not to be a pollution source itself and easy to process. However, the crater of the hydrogen burner is heated to a high temperature by the reaction of hydrogen and oxygen, and partially evaporated to form SiO ₂ particles that contaminate water vapor as the processing gas and adhere to the surface of the semiconductor wafer to be heat treated. There is a problem that it becomes a kind of pollution, which causes a decrease in yield. Therefore, the conventional example has a problem that must be solved to prevent the evaporation of the crater of the hydrogen burner.

[Means for Solving the Problems]

The present invention is a hydrogen burner for a water vapor diffusion device, which is a concrete means for solving the problems of the conventional example. A crater cap made of silicon is attached to the crater of the hydrogen burner to completely cover the hydrogen jet port. The contamination of water vapor can be eliminated by attaching the crater cap.

【Example】

Next, the present invention will be described in more detail with reference to the illustrated embodiment. The shape of the hydrogen burner, the number of craters, and the direction of the craters are not particularly limited, but an internal combustion type hydrogen burner will be described in the illustrated embodiment. 1 and 2 are a plan view and a side view showing the whole of the hydrogen burner 1 according to the present invention. The hydrogen burner is housed in a processing tube (not shown) and reacts hydrogen with oxygen to generate steam. It constitutes a device for generating. Hydrogen is introduced from the inlet 2 and reaches the four craters 4 via the conduit 3. The inside of the processing tube is in an oxygen atmosphere, and the hydrogen reaching the four craters is ignited by an appropriate igniting means and reacts with oxygen to become water vapor. This water vapor oxidizes and diffuses the surface of a semiconductor wafer (not shown) housed in the processing tube to perform heat treatment. Here, as shown in FIG. 3, hydrogen ejected from the hydrogen ejection port 5 of the crater 4 reacts with oxygen to form a flame 6, which heats the hydrogen ejection port 5 to a high temperature. However, in the present invention, a crater cap 7 that covers the entire surface of the hydrogen ejection port 5 is attached so that it does not evaporate even when heated to a high temperature. That is, as shown in FIG. 4, the crater cap 7 made of silicon is attached to the crater 4,
The hydrogen ejection port 5 is formed by itself in order to protect the hydrogen ejection port of the crater body 8 formed of quartz as a whole from the reaction heat. In addition, although one crater 4 is shown in FIG. 4, the crater cap 7 is similarly attached to the other three craters. Since the melting point of silicon used for the crater cap 7 is higher than that of quartz, the tip of the crater 4 can be sufficiently protected from the high heat generated by the reaction between hydrogen and oxygen, and the evaporation of quartz can be prevented to become a pollution source. The generation of SiO ₂ particles can be suppressed. Further, the crater cap 7 is not limited to silicon as long as it does not become a pollution source itself and can protect the crater 4 from high heat and suppress the generation of SiO ₂ particles. It can be used. Further, the crater cap 7 only needs to be attached to the tip of the crater body 8 to the extent that it does not fall off, and may be attached using an appropriate means such as press fitting or screwing. Further, the hydrogen burner according to the present invention can be applied to various steam diffusion devices regardless of so-called vertical type, horizontal type, external combustion type, internal combustion type as long as the object of the present invention is achieved.

[Effect of device]

As described above, the hydrogen burner of the water vapor diffusion device according to the present invention is configured such that the crater cap formed of silicon covering the entire hydrogen jet port is attached to the crater of the hydrogen burner. Even if hydrogen is used to react with oxygen using quartz, the heat of reaction does not evaporate the quartz that forms the crater, and it does not contaminate the high-purity water vapor used as a processing gas in the diffusion processing of semiconductor wafers. Therefore, it has an excellent effect that the yield reduction can be significantly suppressed. Further, the crater cap does not evaporate even at a high temperature, and is made of, for example, silicon, and has an excellent effect that it has a good fit because it has a linear film tension coefficient similar to that of quartz which constitutes a hydrogen burner.

[Brief description of drawings]

FIG. 1 is a plan view showing the entire hydrogen burner according to the present invention, FIG. 2 is a side view of the hydrogen burner, and FIG. 3 is a side view showing an enlarged combustion port of the hydrogen burner and showing a combustion state. FIG. 4 is a sectional view of the crater portion. 1 ... Hydrogen burner, 2 ... Inlet port, 3 ... Conduit, 4 ... Crater, 5 ... Hydrogen spout, 6 ... Flame, 7 ... Crater cap, 8 ... Crater body

Claims (1)

(57) [Scope of utility model registration request] 1. A hydrogen burner for a steam diffusion device, comprising:
The hydrogen burner is characterized in that a crater cap made of silicon is attached to the crater of the hydrogen burner so as to entirely cover the hydrogen jet.