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JP2501126B2 - Bonding method of gold wire to aluminum lead terminal - Google Patents

Bonding method of gold wire to aluminum lead terminal

Info

Publication number
JP2501126B2
JP2501126B2 JP24503589A JP24503589A JP2501126B2 JP 2501126 B2 JP2501126 B2 JP 2501126B2 JP 24503589 A JP24503589 A JP 24503589A JP 24503589 A JP24503589 A JP 24503589A JP 2501126 B2 JP2501126 B2 JP 2501126B2
Authority
JP
Japan
Prior art keywords
bonding
gold wire
wire
aluminum
lead terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP24503589A
Other languages
Japanese (ja)
Other versions
JPH03108347A (en
Inventor
辰夫 中野
清一 山崎
和男 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP24503589A priority Critical patent/JP2501126B2/en
Publication of JPH03108347A publication Critical patent/JPH03108347A/en
Application granted granted Critical
Publication of JP2501126B2 publication Critical patent/JP2501126B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/85424—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、回路基板に搭載された半導体等とアルミニ
ウムリード端子とをワイヤーボンディングする際に、特
定のキャピラリーツールを装着したボールボンダーを用
いて金線をボンディングすることにより接合性に富んだ
金線ボンディング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention uses a ball bonder equipped with a specific capillary tool when wire-bonding a semiconductor or the like mounted on a circuit board to an aluminum lead terminal. The present invention relates to a gold wire bonding method which is excellent in bondability by bonding a gold wire.

（従来の技術） 従来ワイヤーボンディング用部分にアルミニウム箔を
用いたプリント配線基板は、半導体等とアルミニウムリ
ード端子とをワイヤーボンディングやクロスオーバーワ
イヤーボンディングする際、接合性にすぐれたアルミニ
ウム線が使用されている。そしてアルミニウム箔をワイ
ヤーボンディング用部分に用いたプリント配線基板は、
めっき等に貴金属類を使用しないため配線基板も安価で
あり、産業上重要な位置を占めている。(Prior Art) Conventionally, a printed wiring board using an aluminum foil for a wire bonding portion uses an aluminum wire having excellent bonding properties when wire bonding or crossover wire bonding between a semiconductor or the like and an aluminum lead terminal. There is. And the printed wiring board using aluminum foil for the wire bonding part is
Wiring boards are inexpensive because they do not use precious metals for plating, etc., and they occupy an important position in the industry.

しかしアルミニウム線のワイヤーボンディング方法
は、一般にウエツジボンディング法が使用されており接
合性には信頼性があるが、ウエツジボンディング法は、
第１接合部から第２接合部へワイヤーを張る方向が制限
される欠点を有している。またこの方向性を解消する方
法として配線基板を回転台に乗せ回転させながらボンデ
ィングする方法もあるが、配線基板の大きさに制限もあ
り、全てを満足することができない。However, as the wire bonding method for the aluminum wire, the wet bonding method is generally used and the bondability is reliable.
It has a drawback that the direction in which the wire is stretched from the first joint portion to the second joint portion is limited. Further, as a method of eliminating this directionality, there is a method of mounting a wiring board on a turntable and performing bonding while rotating the wiring board.

また他のワイヤーボンディング方法としては金線のボ
ールボンディング法があるが、アルミニウムリード端子
はシリコン上に蒸着して形成したIC電極やニッケル上に
数μｍの金めっきをした金めっきリード端子とは異な
り、アルミニウムの肉厚が数10μｍと厚いアルミニウム
単独若しくは銅とアルミニウムとのクラッド箔又はアル
ミニウムに銅めっきした材料を使用するために第１接合
部は問題ないが第２接合部をボンディングする際にボー
ルボンダーに装着したキャピラリーツール先端が前記ア
ルミニウムへ過度に押し込まれたり、金線の変形が大き
く極くわずかな接合強度しか得られない。このために半
導体等と金線との間に断線等の不良現象が発生し、信頼
性低下の原因となる。Another wire bonding method is the gold wire ball bonding method, but aluminum lead terminals are different from IC electrodes formed by vapor deposition on silicon and gold-plated lead terminals with gold plating of several μm on nickel. Since the aluminum has a thickness of several tens of μm and aluminum is used alone, or a clad foil of copper and aluminum or a material obtained by copper-plating aluminum is used, there is no problem in the first joint, but a ball is used when bonding the second joint. The tip of the capillary tool attached to the bonder is excessively pushed into the aluminum, or the gold wire is greatly deformed, and only a very small bonding strength is obtained. Therefore, a defective phenomenon such as disconnection occurs between the semiconductor and the like and the gold wire, which causes a decrease in reliability.

（発明が解決しようとする課題） 本発明は、かかる欠点を解決するものであり、回路基
板に搭載された半導体等と表面がアルミニウムからなる
ボンディング用部分とをワイヤーでボンディングするに
際し、特定されたキャピラリーツールを装着したボール
ボンダーを使用し、接合ワイヤーとして金線を使用する
ことによりアルミニウムリード端子へ接合信頼性にすぐ
れた効果を有する金線ボンディング方法を見い出し本発
明を完成するに至った。(Problems to be Solved by the Invention) The present invention is to solve such a drawback, and was specified when bonding a semiconductor or the like mounted on a circuit board and a bonding portion whose surface is made of aluminum with a wire. By using a ball bonder equipped with a capillary tool and using a gold wire as a bonding wire, a gold wire bonding method having an excellent bonding reliability to an aluminum lead terminal has been found, and the present invention has been completed.

（課題を解決するための手段） すなわち本発明は、先端傾斜角度（θ）が６°〜10°
を有するキャピラリーツールを装着した加熱・超音波併
用型金線ボールボンダーを使用してアルミニウムリード
端子に金線をボンディングすることを特徴とする金線ボ
ンディング方法である。(Means for Solving the Problem) That is, in the present invention, the tip inclination angle (θ) is 6 ° to 10 °.
Is a method of bonding a gold wire to an aluminum lead terminal using a heating / ultrasonic type gold wire ball bonder equipped with a capillary tool.

（実施例） 以下図面により本発明を詳細に説明する。(Example) The present invention will be described in detail below with reference to the drawings.

第１図は本発明に用いられる加熱・超音波併用型金線
ボールボンダーに装置するキャピラリーツールの部分拡
大図である。本発明のボールボンダーに装着されるキャ
ピラリーツールの先端傾斜角度（θ）３は６°〜10°の
範囲が好ましい。角度が６°未満では、ボンディングの
際に金線の過度の変形が起こり、接合部分の強度が低下
するか又は接合不良となる。また10°を超えるとキャピ
ラリーツール先端の陥没が大きくなり、金線の超音波振
動でのアルミニウムに接合する面積が減少するため接合
強度が低下する。FIG. 1 is a partially enlarged view of a capillary tool installed in a heating / ultrasonic combined-type wire ball bonder used in the present invention. The tip inclination angle (θ) 3 of the capillary tool attached to the ball bonder of the present invention is preferably in the range of 6 ° to 10 °. If the angle is less than 6 °, the gold wire will be excessively deformed during bonding, and the strength of the bonding portion will be reduced or the bonding will be poor. On the other hand, if the angle exceeds 10 °, the tip of the capillary tool will be largely depressed, and the area of the gold wire bonded to aluminum by ultrasonic vibration will decrease, resulting in a decrease in bonding strength.

次に孔口１に連なる先端開口径４に関連する開口角度
７は90°〜120°の範囲が好ましく、90°未満では被着
体であるアルミニウムリード端子部分が開口角度７部に
詰まる傾向が強く、連続したワイヤーボンディングを阻
害する。また120°を超えると第２ボンディング終了後
の金線の切断性が悪くなる。Next, the opening angle 7 related to the tip opening diameter 4 connected to the hole opening 1 is preferably in the range of 90 ° to 120 °, and when it is less than 90 °, the aluminum lead terminal portion as the adherend tends to be clogged in the opening angle 7 part. Strongly interferes with continuous wire bonding. On the other hand, if it exceeds 120 °, the cutting property of the gold wire after the second bonding is deteriorated.

孔口１の径は使用する金線の径により、作業性、ワイ
ヤーボンディング位置精度等を良好に決められ、通常特
別な場合を除き使用金線径＋10〜25μｍ程度が使用され
る。The diameter of the hole opening 1 can be appropriately determined depending on the diameter of the gold wire used, workability, wire bonding position accuracy, etc. Normally, the gold wire diameter used is about 10 to 25 μm except in special cases.

更に、キャピラリーツール先端外径部６は大きいほど
接合面積が大きくなり、接合強度は増加するがIC側の電
極サイズや電極の配置で制限される。外側コーナー５は
使用する線径により変わるが小さいもの程接合部直前の
金線切断が起こり易くなり見かけの強度は減少する。ま
た大き過ぎると、接合面積が減少するため強度は低下す
る。Further, the larger the outer diameter portion 6 of the tip of the capillary tool, the larger the bonding area, and the bonding strength increases, but it is limited by the electrode size on the IC side and the arrangement of the electrodes. Although the outer corner 5 changes depending on the diameter of the wire used, the smaller the outer corner 5 is, the more easily the gold wire is cut immediately before the joining portion, and the apparent strength is reduced. On the other hand, if it is too large, the joint area decreases and the strength decreases.

一般的には金線径が30μｍでは外側コーナ５は40μｍ
程度が良好な結果をもたらす。Generally, when the gold wire diameter is 30 μm, the outer corner 5 is 40 μm
Degree gives good results.

このようにキャピラリーツールの先端主要部分を限定
した表面がアルミニウムより成形されたボンディング用
部分に金線が過度に変形せず安定した定格電流を流すこ
とができる。As described above, the gold wire is not excessively deformed in the bonding portion whose surface limiting the main part of the tip of the capillary tool is made of aluminum, and a stable rated current can be passed.

実施例１〜３、比較例１〜３ ワイヤーボンダー（超音波工業社製 サーモソニック
ボールボンダーUBB−５−1A）にキャピラリーツール
（品川白煉瓦社製）を装着し、アルミニウムリード端子
を有するプリント配線基板（電気化学工業社製HITTプレ
ートアルミニウムリード端子部厚さ40μｍ）にワイヤー
ボンディング間隔5mmで金線（田中貴金属社製 SRタイ
プ直径25μｍ）ボンディングした。次いでワイヤーボン
ディングした金線の２点間の中央をプルテスターで引張
り接合強度を測定した。Examples 1 to 3 and Comparative Examples 1 to 3 A wire bonder (Thermosonic Ball Bonder UBB-5-1A manufactured by Ultrasonic Industries Co., Ltd.) is equipped with a capillary tool (manufactured by Shinagawa White Brick Co., Ltd.), and a printed wiring having an aluminum lead terminal. A gold wire (SR type diameter 25 μm, manufactured by Tanaka Kikinzoku Co., Ltd.) was bonded to a substrate (HITT plate aluminum lead terminal thickness 40 μm, manufactured by Denki Kagaku Kogyo KK) with a wire bonding interval of 5 mm. Then, the center between two points of the wire-bonded gold wire was pulled with a pull tester to measure the bonding strength.

ワイヤーボンダー調整条件：温度175℃ 荷重 50g 第１ボンディング：超音波出力 0.04ワット ボンディングタイム 0.1秒 第２ボンディング：超音波出力 0.09ワット ボンディングタイム 0.3秒 共通：孔口径＝46μm, 孔口開口傾斜幅＝15μm, 先端開口径＝102μm, 外側コーナーＲ＝30μm, 先端外径＝254μｍ （発明の効果） 以上説明したとおり本発明は、回路基板のワイヤーボ
ンディング用リード端子にアルミニウムを使用するに際
し、先端傾斜角度（θ）が特定された治具（キャピラリ
ーツール）を装着した加熱・超音波併用型金線ボールボ
ンダーを使用することにより、信頼性の高い金線ボンデ
ィングが可能となり、半導体等と導電回路との接合性が
容易となり、高信頼性のある回路を得ることができる特
徴を有するものである。Wire bonder adjustment conditions: Temperature 175 ° C Load 50g 1st bonding: Ultrasonic output 0.04 watt Bonding time 0.1 seconds 2nd bonding: Ultrasonic output 0.09 watt Bonding time 0.3 seconds Common: Pore diameter = 46 μm, Pore opening inclination width = 15 μm , Tip opening diameter = 102μm, outer corner R = 30μm, tip outer diameter = 254μm (Effects of the Invention) As described above, the present invention, when using aluminum for the wire-bonding lead terminals of the circuit board, is equipped with a heating / superheater equipped with a jig (capillary tool) whose tip inclination angle (θ) is specified. By using the sonic combined-type gold wire ball bonder, highly reliable gold wire bonding becomes possible, the bondability between the semiconductor and the conductive circuit is facilitated, and a highly reliable circuit can be obtained. I have.

【図面の簡単な説明】[Brief description of drawings]

第１図は本発明に用いられるボールボンダー装置用キャ
ピラリーツール先端部の部分拡大図を示す。 符号 １……孔口、２……孔口開口傾斜部 ３……先端傾斜角度（θ）、４……先端開口径 ５……外側コーナー、６……先端外径部 ７……開口角度FIG. 1 shows a partially enlarged view of the tip of a capillary tool for a ball bonder device used in the present invention. Reference numeral 1 ... Hole opening, 2 ... Hole opening inclined portion 3 ... Tip inclination angle (θ), 4 ... Tip opening diameter 5 ... Outer corner, 6 ... Tip outer diameter portion 7 ... Opening angle

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】先端傾斜角度（θ）が６°〜10°を有する
キャピラリーツールを装着した加熱・超音波併用型金線
ボールボンダーを使用してアルミニウムリード端子に金
線をボンディングすることを特徴とする金線ボンディン
グ方法。1. A gold wire is bonded to an aluminum lead terminal by using a heating / ultrasonic type gold wire ball bonder equipped with a capillary tool having a tip inclination angle (θ) of 6 ° to 10 °. And gold wire bonding method.
JP24503589A 1989-09-22 1989-09-22 Bonding method of gold wire to aluminum lead terminal Expired - Fee Related JP2501126B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24503589A JP2501126B2 (en) 1989-09-22 1989-09-22 Bonding method of gold wire to aluminum lead terminal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24503589A JP2501126B2 (en) 1989-09-22 1989-09-22 Bonding method of gold wire to aluminum lead terminal

Publications (2)

Publication Number Publication Date
JPH03108347A JPH03108347A (en) 1991-05-08
JP2501126B2 true JP2501126B2 (en) 1996-05-29

Family

ID=17127616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24503589A Expired - Fee Related JP2501126B2 (en) 1989-09-22 1989-09-22 Bonding method of gold wire to aluminum lead terminal

Country Status (1)

Country Link
JP (1) JP2501126B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0525644A1 (en) * 1991-07-24 1993-02-03 Denki Kagaku Kogyo Kabushiki Kaisha Circuit substrate for mounting a semiconductor element
EP1158579B1 (en) 1996-10-01 2008-11-19 Panasonic Corporation Wire bonding capillary for forming bump electrodes
CN103809474A (en) * 2014-02-14 2014-05-21 中国电子科技集团公司第四十五研究所 Electronic ignition device and communication method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138850A (en) * 1979-04-17 1980-10-30 Toshiba Corp Bonding capillary
JPH01120332U (en) * 1988-02-08 1989-08-15

Also Published As

Publication number Publication date
JPH03108347A (en) 1991-05-08

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