JP2500450B2 - Semiconductor wafer - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer, and more particularly to a semiconductor wafer having a contact check pattern.

[0002]

2. Description of the Related Art Conventionally, as shown in FIG. 4, when performing a probing test on a real chip portion of a semiconductor wafer (1), silicon is used instead of the semiconductor wafer (1) before or during continuous measurement. A contact check wafer (10) having an aluminum film formed by vapor deposition on the entire surface of the substrate is placed on a stage (7) in a prober as shown in FIG. 3, and the probe card (8) is placed on the contact check wafer (10). The probe resistance of the probe card (8) is measured by contacting the probe needle of (1), and the quality of the characteristic of the probe card (8) is automatically diagnosed based on the measurement result.
A method relating to such a self-diagnosis method of a probe card is proposed in, for example, Japanese Patent Application Laid-Open No. 61-295641.

[0003]

The above-mentioned conventional contact check method uses the contact check wafer in which an aluminum film is vapor-deposited on the entire surface of the silicon substrate and the semiconductor wafer is taken in and out by the time the semiconductor wafer probing test is completed. Since it requires multiple times, the work efficiency decreases, and after the contact check, the height and angle of the real chip of the semiconductor wafer and the probe card, the needle pressure of the bonding pad, etc. are adjusted,
The state at the time of contact check is not maintained, and the reliability of the semiconductor wafer probing test decreases. Also,
If a contact check is performed during the probing test of a semiconductor wafer, the measured real chip data stored in the prober will be erased when the semiconductor wafer and the contact check wafer are taken in and out. Remeasurement of the chip is required.

[0004]

SUMMARY OF THE INVENTION The present invention is to solve the above-mentioned problems. A semiconductor wafer is provided with a contact check pattern portion for measuring the contact resistance of a probe needle of a probe card in addition to the real chip portion. In addition, the contact check pattern portion is provided on a peripheral portion of the semiconductor wafer other than the real chip portion, and the contact check pattern portion is provided on the semiconductor wafer real chip portion. It is a semiconductor wafer in which a part or all of it is provided in a region within 5 mm from the periphery in the peripheral part other than.

[0005]

In the present invention, when the contact check is performed before the real chip probing test of the semiconductor wafer or during the continuous measurement, it is not necessary to carry out the semiconductor wafer and the contact check wafer for 1-3 times. The probe card can be adjusted at the time of contact check, and the state at the time of contact check is maintained even during the probing test of the real chip.

[0006]

Embodiments of the present invention will now be described with reference to the drawings. 1 is a plan view of an embodiment of the present invention, FIG.
3 is a sectional view of an embodiment of the present invention, and FIG. 3 is a sectional view of a semiconductor measuring prober. As shown in FIG. 1, a semiconductor wafer (1) in which a contact check pattern (2) is provided in addition to the real chip portion of the semiconductor wafer (1) is manufactured. This contact check pattern (2)
As shown in FIG. 2, until the aluminum wiring (4) is vapor-deposited, the PR method is used to make only the silicon substrate (3), and then aluminum vapor deposition (4) is performed. Further, after forming the passivation cover film (5), the bonding pad portion (6) is opened and formed by the PR method.
Further, the contact check pattern (2) is a region other than the real chip part of the semiconductor wafer (1) and a region within 5 mm from the periphery, in which a part or all of the contact check pattern (2) is included. To form.

According to the present embodiment, when the probing test of the real chip portion of the semiconductor wafer (1) is performed using the prober as shown in FIG. 3, the semiconductor wafer (1 ), It is not necessary to insert the contact check wafer (10) for contact check and work efficiency is improved. Furthermore, since the bonding pad (6) is opened in the contact check pattern (2), the height (Z), the angle (θ) of the probe card (8), the needle pressure of the bonding pad, etc. at the time of contact check. Can be adjusted,
Since the state at the time of contact check is maintained during the real chip measurement, the reliability of the probing test of the semiconductor wafer (1) is improved. If a contact check is performed during the probing test of the semiconductor wafer (1), the contact check can be performed while the semiconductor wafer (1) is still mounted on the stage (7). It is possible to prevent the data of the measured real chip stored in the prober from being erased by the removal.

[0008]

As described above, according to the present invention, the contact check pattern is provided in the portion other than the real chip portion of the semiconductor wafer, so that the contact check is performed before the probing test of the real chip of the semiconductor wafer or during the continuous measurement. At this time, it is not necessary to take in and out the semiconductor wafer and the wafer for contact check which are performed 1 to 3 times, and the working efficiency is improved. Furthermore, the probe card can be adjusted during contact check, and the state during contact check is maintained even during the real chip probing test, thus improving the reliability of the probing test. Also, when 50 to 100 consecutive real chips are defective during the semiconductor wafer probing test, the contact check is performed, but the contact check can be performed with the semiconductor wafer still on the stage. The data of the measured real chip stored in the prober when the wafer is taken in and out is not erased, and remeasurement of the measured real chip can be prevented.

[Brief description of drawings]

FIG. 1 is a plan view of an embodiment of the present invention.

FIG. 2 is a sectional view of an embodiment of the present invention.

FIG. 3 is a sectional view of a semiconductor measurement prober.

FIG. 4 is a plan view of a conventional semiconductor wafer and a contact check wafer.

[Explanation of symbols]

 1 Semiconductor Wafer 2 Contact Check Pattern 3 Semiconductor Substrate 4 Aluminum Wiring 5 Passivation Cover 6 Bonding Pad 7 Stage 8 Probe Card 9 Tester 10 Contact Check Wafer

Claims (3)

(57) [Claims] 1. A semiconductor wafer comprising a contact check pattern portion for measuring the contact resistance of a probe needle of a probe card, in addition to the real chip portion on the semiconductor wafer. 2. The semiconductor wafer according to claim 1, wherein the contact check pattern portion is provided in a peripheral portion of the semiconductor wafer other than the real chip portion. 3. The contact check pattern portion is partially or wholly provided in a region within 5 mm from the periphery in a peripheral portion other than the real chip portion of the semiconductor wafer. Alternatively, the semiconductor wafer according to claim 2.