JP2025042250A - Bonded structure and method for manufacturing the bonded structure - Google Patents

Abstract

To provide an adhesive structure that can be stably used even in a high-temperature environment and a clean environment and can achieve sufficient adhesive force.SOLUTION: Provided is an adhesive structure in which a fiber structure layer configured from a plurality of fiber bodies composed of an inorganic material is formed on at least a portion of the surface of a base material composed of an inorganic material, the equivalent circle diameter D of a cross-section orthogonal to the extension direction of a fiber body 21 constituting the fiber structure layer is within the range of 15-400 nm, and an aspect ratio H/D calculated from the height H and the equivalent circle diameter D of the fiber body 21 is 3 or greater.SELECTED DRAWING: Figure 4

Description

The present invention relates to an adhesive structure.

For example, in semiconductor manufacturing equipment, if particles or the like are present on the surface that holds a semiconductor wafer, the flatness of the surface will be impaired, causing manufacturing defects and reducing yields.
Conventionally, as a method for removing particles, for example, as disclosed in Patent Documents 1 and 2, a substrate having an adhesive substance adhered thereto is used as a cleaning wafer, and this cleaning wafer is transported idly to remove particles in a transport system and a processing unit.

Furthermore, in the case of a gripping member that grips an object and a transport member that transports an object, as shown in Patent Documents 2 and 3, for example, an adhesive structure having adhesive properties is disposed in the portion that comes into contact with the object in order to stably fix the object.
Furthermore, when handling an object, for example, as shown in Patent Document 4, an adhesive structure having adhesiveness is used to temporarily fix the object and prevent it from shifting position.
Here, since the bonded structure is required to have a sufficient frictional force between itself and the object, it is usually made of an organic material such as rubber, which is a viscoelastic body.

JP 2009-117440 A JP 2018-094704 A WO2009/005027 publication JP 2009-168860 A

However, in the method disclosed in Patent Document 1, it is necessary to temporarily stop the operation of the semiconductor manufacturing equipment or to lower the environmental temperature to 400° C. or lower when removing particles, and the downtime causes a problem of reduced productivity.
In addition, organic materials such as rubber have problems in that they cannot be used stably in high-temperature environments due to insufficient heat resistance, and they cannot be used in clean environments due to the risk of contamination by the organic materials.
Therefore, for example, bonded structures made of organic materials could not be applied to semiconductor manufacturing process applications, aerospace applications, and robot applications.

Here, the industrial materials constituting the various members are roughly divided into organic materials such as resin and rubber, and inorganic materials such as ceramics and metals.
As mentioned above, organic materials have excellent flexibility but poor heat resistance. In contrast, inorganic materials have excellent heat resistance but poor flexibility. In this way, when it comes to industrial materials, a trade-off in properties occurs depending on the material selected.

For this reason, when the adhesive structure is made of inorganic materials, it has excellent heat resistance and reduces contamination problems, but there is a risk that sufficient adhesive strength cannot be obtained, and the object cannot be adequately fixed or particles cannot be adsorbed and removed.

This invention was made in consideration of the above-mentioned circumstances, and aims to provide an adhesive structure that can be stably used even in high-temperature and clean environments and can obtain sufficient adhesive strength.

As a result of intensive research conducted by the present inventors to solve this problem, they discovered that by forming a special structure on the surface of a substrate made of an inorganic material such as ceramic or metal, sufficient adhesive strength is imparted to the surface, making it possible to use the substrate as an adhesive structure.

The present invention has been made based on the above findings, and the adhesive structure of aspect 1 of the present invention is characterized in that a fiber structure layer composed of a plurality of fiber bodies composed of an inorganic material is formed on at least a portion of the surface of a substrate composed of an inorganic material, the circular equivalent diameter D of a cross section perpendicular to the extension direction of the fiber bodies constituting the fiber structure layer is in the range of 15 nm to 400 nm, and the aspect ratio H/D calculated from the circular equivalent diameter D and height H of the fiber bodies is 3 or more.

According to the bonded structure of aspect 1 of the present invention, since it is made of an inorganic material such as ceramics or metal, it has excellent heat resistance and can sufficiently suppress the problem of contamination.
Furthermore, a fiber structure layer consisting of a plurality of fiber bodies is formed on at least a portion of the surface of the substrate, the circular equivalent diameter D of a cross section perpendicular to the extension direction of the fiber bodies is within a range of 15 nm or more and 400 nm or less, and the aspect ratio H/D calculated from the circular equivalent diameter D and height H of the cross section of the fiber bodies is 3 or more, so that it is possible to impart sufficient adhesive strength to the surface of the substrate.
Therefore, the adhesive structure of the first aspect of the present invention can be used stably even in a high-temperature environment and a clean environment, and can obtain a sufficient adhesive strength. That is, the adhesive structure of the first aspect of the present invention can be used as an anti-slip member or a foreign matter adsorbing member that can be used stably even in a high-temperature environment and a clean environment.

The bonded structure of Aspect 2 of the present invention is the bonded structure of Aspect 1, characterized in that the fibrous body constituting the fiber structure layer is made of a metal oxide.
According to the adhesive structure of aspect 2 of the present invention, the fibrous body constituting the fiber structure layer is made of metal oxide, so that the fiber structure layer can be reliably formed in the above-mentioned shape, sufficient adhesive strength can be obtained, and the heat resistance is excellent, and the problem of contamination can be sufficiently suppressed.

The bonded structure of Aspect 3 of the present invention is the bonded structure of Aspect 2, characterized in that the metal oxide is aluminum oxide.
According to the adhesive structure of aspect 3 of the present invention, the fibrous body constituting the fiber structure layer is made of aluminum oxide, so that sufficient adhesive strength can be obtained, the heat resistance is excellent, and the problem of contamination can be sufficiently suppressed.

The bonded structure of Aspect 4 of the present invention is the bonded structure of any one of Aspects 1 to 3, characterized in that the occupancy rate of the fiber structure layer on the surface is 20% or more.
According to the adhesive structure of aspect 4 of the present invention, the occupancy area ratio of the fiber structure layer on the surface is 20% or more, so that sufficient adhesive strength can be reliably obtained and particles can be reliably removed.

The bonded structure of Aspect 5 of the present invention is characterized in that in the bonded structure of any one of Aspects 1 to 4, the adsorption rate of particles having a particle diameter of 1 μm or more and 30 μm or less is 5% or more.
According to the bonded structure of aspect 5 of the present invention, the adsorption rate of particles having a particle diameter of 1 μm or more and 30 μm or less is 5% or more, so that the particles can be reliably adhered and removed.

The bonded structure of a sixth aspect of the present invention is the bonded structure of any one of the first to fifth aspects, characterized in that the surface of the substrate has a static friction coefficient with respect to silicon of 0.30 or more.
According to the bonded structure of aspect 6 of the present invention, the static friction coefficient of the surface of the base material with respect to silicon is set to 0.30 or more, so that the target member can be reliably fixed.

The bonded structure of aspect 7 of the present invention is a method for manufacturing a bonded structure according to any one of claims 1 to 6, which includes a pretreatment step of forming a mirror-finished metal surface on the surface of the base material, an anodizing step of anodizing the metal surface, and an etching step of dissolving and removing a portion of the resulting anodized layer, and is characterized in that the anodizing step and the etching step are repeated multiple times.

According to the adhesive structure of aspect 7 of the present invention, the mirror-finished metal surface is repeatedly subjected to anodizing and etching, so that the above-mentioned fiber structure layer can be formed on the surface of the substrate. This makes it possible to manufacture an adhesive structure that can be stably used even in high-temperature and clean environments and that can obtain sufficient adhesive strength.

The present invention provides an adhesive structure that can be stably used even in high-temperature and clean environments and that can obtain sufficient adhesive strength, as well as a method for manufacturing the adhesive structure.

1 is a schematic explanatory diagram of an adhesive structure according to an embodiment of the present invention; 1A and 1B are explanatory diagrams of a fiber structure layer in an adhesive structure according to one embodiment of the present invention, in which (a) is an SEM observation photograph and (b) is a schematic diagram. 1A and 1B are explanatory diagrams of a fiber structure layer in an adhesive structure according to one embodiment of the present invention, where (a) is an SEM observation photograph and (b) is a schematic diagram. FIG. 2 is an explanatory diagram of a fibrous body in a bonded structure according to one embodiment of the present invention. FIG. 2 is an explanatory diagram showing a method for measuring a particle adsorption rate. FIG. 2 is an explanatory diagram showing a method for measuring a static friction coefficient. FIG. 2 is a flow diagram showing a method for manufacturing a bonded structure according to the present embodiment.

Hereinafter, an adhesive structure 10 according to one embodiment of the present invention will be described with reference to the accompanying drawings.
The adhesive structure 10 of this embodiment is used, for example, in gripping devices, conveying devices, manufacturing devices, etc. that are used in high-temperature or clean environments in the aerospace field, semiconductor manufacturing process field, medical field, etc., to temporarily fix objects or adsorb and remove particles present on the surface of a substrate, etc.

The adhesive structure 10 of this embodiment has a substrate 11 made of an inorganic material such as ceramics or metal, and a fiber structure layer 20 made of a plurality of fiber bodies 21 is formed on at least a portion of the surface of the substrate 11.
There is no particular restriction on the shape or size of the substrate 11, but in this embodiment, as shown in FIG. 1, the substrate 11 is plate-shaped and has a thickness in the range of, for example, 10 μm to 10 cm.

Here, examples of inorganic materials constituting the substrate 11 include metals, ceramics, silicon, and glass. The inorganic material constituting the substrate 11 preferably has a melting point of 100°C or higher and a decomposition temperature of 100°C or higher, more preferably a melting point of 300°C or higher and a decomposition temperature of 300°C or higher, and even more preferably a melting point of 500°C or higher and a decomposition temperature of 500°C or higher.

The metal constituting the substrate 11 may be a simple metal or an alloy. Alloys include those made of multiple metal elements and those made of a metal element and a nonmetal element. Examples of simple metals include aluminum, nickel, iron, copper, titanium, tungsten, and magnesium. Examples of alloys include aluminum alloys, NiP, stainless steel, and copper alloys.

An oxide, a nitride, or a carbide can be used as the ceramic that constitutes the base material 11. Examples of the ceramic include aluminum oxide (alumina), titanium oxide, and quartz.
The inorganic material constituting the base material 11 is preferably a metal, and more preferably contains any one of copper, a copper alloy, aluminum, an aluminum alloy, and a NiP alloy.

The fiber structure layer 20 formed on the surface of the substrate 11 has a structure in which a plurality of fiber bodies 21 are arranged upright, as shown in FIG. 2 or FIG.
Here, the metal oxide constituting the fibrous body 21 is preferably aluminum oxide.
In this embodiment, the base material 11 is made of aluminum, and the fibrous body 21 is made of aluminum oxide.

The average circle-equivalent diameter D of the cross section perpendicular to the extension direction of the fibrous body 21 is in the range of 15 nm to 400 nm. The circle-equivalent diameter D of the fibrous body 21 can be measured from a cross-sectional SEM photograph of the fiber structure layer 20 taken with a SEM (scanning electron microscope). In this embodiment, as shown in Fig. 4, the fibrous body 21 has a roughly cone shape, and the circle-equivalent diameter D is the circle-equivalent diameter of the cross section of the bottom of the cone shape.
Here, the lower limit of the average value of the equivalent circle diameter D of the cross section of the fibrous body 21 is more preferably 30 nm or more, and even more preferably 50 nm or more. On the other hand, the average value of the equivalent circle diameter D of the cross section of the fibrous body 21 is preferably 300 nm or less, and even more preferably 200 nm or less.

Moreover, the aspect ratio H/D of the fibrous body 21, calculated from the average value of the equivalent circle diameter D and the average height H of the fibrous body 21, is preferably 3 or more. The aspect ratio of the fibrous body 21 can be measured from a cross-sectional SEM photograph of the fiber structure layer 20 taken with a SEM (scanning electron microscope).
The aspect ratio H/D of the fibrous body 21 is preferably 4 or more, and more preferably 5 or more. On the other hand, the aspect ratio H/D of the fibrous body 21 is preferably 50 or less, and more preferably 30 or less.

The average height H of the fibrous body 21 is preferably in the range of 50 nm to 3000 nm. The height of the fibrous body 21 can be measured from a cross-sectional SEM photograph of the fiber structure layer 20 taken with a SEM (scanning electron microscope).
The average height H of the fibrous body 21 is preferably 300 nm or more, and more preferably 500 nm or more, whereas the average height H of the fibrous body 21 is preferably 3000 nm or less, and more preferably 2000 nm or less.

In the bonded structure 10 of this embodiment, the area ratio (occupancy rate) of the fiber structure layer 20 on the surface (bonding surface) is preferably 20% or more.
In the bonded structure 10 shown in FIG. 1, the fiber structure layer 20 is formed on approximately 70% of the surface of the substrate 11 .
The area ratio of the fiber structure layer 20 to the surface of the base material 11 is preferably 25% or more, more preferably 50% or more. Also, the area ratio of the fiber structure layer 20 to the surface of the base material 11 is 100% or less.

In the bonded structure 10 of this embodiment, the adsorption rate of particles having a particle diameter of 1 μm or more and 30 μm or less is set to 5% or more.
The particle adsorption rate can be calculated by the procedure shown in Fig. 5. That is, a liquid containing particles having a particle diameter of 1 µm to 30 µm (PSL particles: polystyrene latex particles) is dropped onto the surface of an object to disperse the particles. The surface of the adhesive structure 10 on which the fiber structure layer 20 is formed is brought into contact with the object to adsorb the particles.
The number of particles in the contact area of the bonded structure 10 on the surface of the object before and after contact with the bonded structure 10 is counted, and the particle adsorption rate is calculated.

In the bonded structure 10 of this embodiment, the static friction coefficient μ of the surface of the substrate 11 on which the fiber structure layer 20 is formed is set to 0.30 or more.
The static friction coefficient μ on the surface of the substrate 11 is preferably 0.35 or more, and more preferably 0.40 or more. There is no particular upper limit to the static friction coefficient μ, but in reality, the static friction coefficient μ is 10 or less.
Here, the static friction coefficient μ on the surface of the substrate 11 can be calculated by the formula shown in Fig. 6. In Fig. 6, m is the mass of the object, g is the gravitational acceleration, _F0 is the maximum static friction force, and N is the normal force. Specifically, when the angle at which the sliding starts is θ, the static friction coefficient μ is expressed as μ=tan θ.

Next, a description will be given of an example of a method for manufacturing the bonded structure 10 of the present embodiment. In the bonded structure 10 of the present embodiment, as described above, the base material 11 is made of aluminum, and the fibrous body 21 is made of aluminum oxide.
As shown in the flow diagram of FIG. 7, this embodiment includes a pretreatment step S01, an anodization step S02, and an etching step S03.

In the pretreatment step S01, a mirror-finished metal surface is formed on the surface of the substrate 11. In this embodiment, since the substrate 11 is made of aluminum, the surface of the substrate 11 is electrolytically polished to give a mirror finish, thereby forming a mirror-finished metal surface.
In this embodiment, the substrate 11 is immersed in an electrolytic polishing solution (e.g., _HClO4 /EtOH) and electrolytic polishing is performed under the conditions of a temperature of 0°C to 5°C, a holding time of 4 minutes to 5 minutes, and a current density of 0.20 A/ ^cm2 to 0.25 A/ ^cm2 .

In the anodizing step S02, the metal surface formed in the pretreatment step S01 is anodized to form an anodized film.
In this embodiment, the anodization is performed using a treatment liquid (e.g., _H3PO4 aqueous solution) under conditions _of a temperature of 0°C to 5°C, a holding time of 60 minutes to 70 minutes, and a voltage of 160V to 170V.

In the etching step S03, a part of the anodized layer obtained in the anodizing step S02 is dissolved and removed.
In this embodiment, the etching _process is performed using an etching solution (e.g., _H2CrO4 / _HPO4 aqueous solution _{or H3PO4} aqueous solution) under conditions of a temperature of 70°C to 75°C and a retention time of 120 minutes to 130 minutes.

Here, the above-mentioned anodizing step S02 and etching step S03 are repeatedly performed, whereby a fiber structure layer 20 having a plurality of fiber bodies 21 standing upright is formed.
By adjusting the number of times the anodizing step S02 and the etching step S03 are repeated, it is possible to manufacture the fiber structure layer 20 having the structure shown in FIG. 2 or the fiber structure layer 20 having the structure shown in FIG.

The adhesive structure 10 of this embodiment is manufactured through the above-mentioned steps.

According to the adhesive structure 10 of this embodiment configured as described above, since it is made of inorganic materials such as ceramics and metals, it has excellent heat resistance and can sufficiently suppress the problem of contamination.
A fiber structure layer 20 consisting of a plurality of fiber bodies 21 is formed on at least a part of the surface of the base material 11, and the fiber body 21 constituting the fiber structure layer 20 has a circular equivalent diameter D of a cross section perpendicular to the extending direction in a range of 15 nm to 400 nm, and the aspect ratio H/D calculated from the circular equivalent diameter D and height H of the fiber body 21 is 3 or more, so that it is possible to impart a sufficient adhesive strength to the surface of the base material 11. Therefore, it is possible to stably use the fiber structure layer 20 even in a high temperature environment and a clean environment, and it is possible to obtain a sufficient adhesive strength.

In the adhesive structure 10 of this embodiment, when the fiber body 21 constituting the fiber structure layer 20 is composed of a metal oxide, the fiber structure layer 20 composed of the fiber body 21 of the above-mentioned configuration can be reliably formed, and sufficient adhesive strength can be obtained, while excellent heat resistance can be obtained and contamination problems can be sufficiently suppressed.

In the adhesive structure 10 of this embodiment, if the metal oxide constituting the fibrous body 21 is composed of aluminum oxide, a suitable fiber structure layer 20 can be formed to obtain sufficient adhesive strength.

In the adhesive structure 10 of this embodiment, when the area ratio of the fiber structure layer 20 on the surface of the substrate 11 is 20% or more, the fiber structure layer 20 can reliably obtain sufficient adhesive strength.

In the adhesive structure 10 of this embodiment, if the adsorption rate of particles with a particle diameter of 1 μm or more and 30 μm or less is 5% or more, particles present on the surface of the target object can be reliably adhered and removed.

In the adhesive structure 10 of this embodiment, if the static friction coefficient of the surface of the substrate 11 against silicon is 0.30 or more, the adhesive structure 10 can be used to reliably fix the target member.

In the manufacturing method of the adhesive structure 10 of this embodiment, a mirror-finished metal surface is formed on the surface of the substrate 11, and this metal surface is repeatedly subjected to anodizing and etching processes, so that the above-mentioned fiber structure layer 20 can be formed on the surface of the substrate 11. This makes it possible to manufacture an adhesive structure 10 that can be stably used even in high-temperature and clean environments and that can obtain sufficient adhesive strength.

Although the bonded structure according to the embodiment of the present invention has been described above, the present invention is not limited thereto, and can be modified as appropriate without departing from the technical concept of the invention.
For example, in this embodiment, the substrate is described as being aluminum and the fibrous body constituting the fiber structure layer is formed from aluminum oxide, but this is not limited to this, and the substrate and fibrous body may be made of other inorganic materials.

Below, we explain the results of the confirmation experiments conducted to confirm the effectiveness of the present invention.

(Example 1 of the invention)
First, a substrate (length: 7 mm, width: 7 mm, thickness: 1 mm) made of an inorganic material shown in Table 1 was prepared.
The prepared substrate was electrolytically polished using an electrolytic polishing solution (20 vol % HClO ₄ /80 vol % EtOH) at a current density of 0.2 A/cm ² , a temperature of 0° C., and a treatment time of 4 minutes to mirror-finish the surface of the substrate.

The obtained sample was anodized for 120 minutes in a 0.2 M malic acid aqueous solution containing 3 mM phosphoric acid at a bath temperature of 16° C. under a constant voltage of 350 V.
After anodization, the plate was immersed in an aqueous solution containing 1.8 mass% chromic acid and 6 mass% phosphoric acid at a bath temperature of 70°C for 2 hours to selectively dissolve and remove only the anodized layer, thereby obtaining an aluminum plate with a recessed pattern corresponding to the arrangement of the pores on the back surface of the anodized film.

Using the aluminum plate having the dimple pattern, anodization was again carried out for 35 seconds under the same conditions as the previous anodization.
The obtained sample was etched in a 10 mass % aqueous phosphoric acid solution at a bath temperature of 30° C. for 16 minutes.
By repeating five sets of anodization and etching, a pillar array structure with a diameter of 15 nm and a height of 50 nm was obtained.

(Example 2 of the invention)
A substrate (length: 7 mm, width: 7 mm, thickness: 1 mm) made of an inorganic material shown in Table 1 was prepared.
The prepared substrate was electrolytically polished using an electrolytic polishing solution (20 vol % HClO ₄ /80 vol % EtOH) at a current density of 0.2 A/cm ² , a temperature of 0° C., and a treatment time of 4 minutes to mirror-finish the surface of the substrate.

The electrolytically polished sample was anodized using a 0.1 mol H ₃ PO ₄ aqueous solution under conditions of a voltage of 160 V, a temperature of 0° C., and a treatment time of 60 minutes.
Next, the aluminum plate was etched using a 1.8 mass% _H2CrO4 /6.0 _mass % _HPO4 aqueous solution at 70°C for 120 minutes to remove a portion of the anodized film, thereby obtaining an aluminum plate with a recess pattern corresponding to the arrangement of the pores on the back surface of the anodized film.

An aluminum plate having a recess pattern was anodized using a 0.1 mol _{H3PO4 aqueous} solution at a voltage of 160 V, a temperature of 0°C, and a treatment time of 60 minutes, and then etched using _a 10 mass% _H3PO4 aqueous solution at a temperature of 30°C and a treatment time of 160 minutes to form an alumina pillar array structure.

(Example 3 of the invention)
The electrolytically polished sample was subjected to the same procedure as in Inventive Example 2, except that the anodization voltage was set to 250 V, to obtain a pillar array structure having a diameter of 200 nm and a height of 1000 nm.

(Example 4 of the invention)
The electrolytically polished sample was subjected to the same procedure as in Inventive Example 2, except that the anodization voltage was set to 350 V, to obtain a pillar array structure having a diameter of 300 nm and a height of 1200 nm.

(Example 5 of the invention)
The electrolytically polished sample was subjected to the same procedure as in Inventive Example 2, except that the anodization voltage was set to 130 V, to obtain a pillar array structure having a diameter of 72 nm and a height of 611 nm.

(Example 6 of the invention)
The electrolytically polished sample was subjected to the same procedure as in Inventive Example 2, except that the anodization voltage was set to 100 V, to obtain a pillar array structure having a diameter of 91 nm and a height of 23,300 nm.

(Comparative Example 1)
First, a substrate (length: 7 mm, width: 7 mm, thickness: 1 mm) made of an inorganic material shown in Table 1 was prepared.
The prepared substrate was electrolytically polished using an electrolytic polishing solution (20 vol % HClO ₄ /80 vol % EtOH) under conditions of a current density of 0.2 A/cm ² , a temperature of 0° C., and a treatment time of 4 minutes to obtain an aluminum mirror surface.

(Comparative Example 2)
The same operations as in Example 1 of the present invention were carried out except that the etching using the aluminum plate having a dent pattern was carried out for 25 minutes, thereby obtaining a pillar array structure having a diameter of 10 nm and a height of 35 nm.

(Comparative Example 3)
The same operations as in Example 1 of the present invention were carried out except that the etching using the aluminum plate having a dent pattern was carried out for 9 minutes, thereby obtaining a pillar array structure having a diameter of 25 nm and a height of 30 nm.

(Comparative Example 4)
The same operations as in Example 1 of the present invention were carried out except that the etching using the aluminum plate having a dent pattern was carried out for 5 minutes, thereby obtaining a pillar array structure having a diameter of 50 nm and a height of 100 nm.

The particle adsorption rate of the bonded structure obtained as described above was measured using the following procedure.

A 300 mm disk-shaped silicon wafer S was prepared. A liquid containing standard particles with an average particle diameter of 30 μm was dropped onto the surface of the silicon wafer to disperse the standard particles. In this state, the number of particles present in the area where the adhesive structure was to be laminated on the surface of the silicon wafer was measured using a particle counter.
Next, the adhesive structure and the silicon wafer were stacked so that the surface of the above-mentioned adhesive structure on which the tube array structure was formed was in contact with the surface of the silicon wafer S on which standard particles (polystyrene latex particles: 30 μm) were dispersed, and after keeping them in contact for 30 seconds, the adhesive structure was removed.

The number of particles present in the area on the surface of the silicon wafer where the adhesive structure was laminated was measured using a particle counter. The particle adsorption rate was calculated from the number of particles before and after laminating the adhesive structure. The results are shown in Table 1.

In Comparative Example 1, in which a fiber structure layer was not formed, and Comparative Examples 2 to 4, in which the circular equivalent diameter D of the cross section of the fiber body and the aspect ratio H/D of the circular equivalent diameter D were outside the range of the present invention, the particle adsorption rate was 0.0%, and no effect of removing particles was observed.

In contrast, in Examples 1 to 6 of the present invention, a fiber structure layer was formed in which the circular equivalent diameter D of the cross section of the fiber body and the aspect ratio H/D of the circular equivalent diameter D were within the range of the present invention, the particle adsorption rate was 5% or more, and it was confirmed that particles present on the surface of the target object could be removed.

From the above, it has been confirmed that the present invention can provide an adhesive structure that can be stably used even in high temperature and clean environments and can obtain sufficient adhesive strength.

10 Adhesive structure 11 Substrate 20 Fiber structure layer 21 Fiber body

Claims (7)

a fiber structure layer made of a plurality of fiber bodies made of an inorganic material is formed on at least a part of a surface of a base material made of an inorganic material;
An adhesive structure, characterized in that the circular equivalent diameter D of a cross section perpendicular to the extension direction of the fibrous body constituting the fiber structure layer is in the range of 15 nm to 400 nm, and the aspect ratio H/D calculated from the circular equivalent diameter D and height H of the fibrous body is 3 or more. The adhesive structure according to claim 1, characterized in that the fibrous body constituting the fiber structure layer is made of a metal oxide. The bonded structure according to claim 2, characterized in that the metal oxide is aluminum oxide. The adhesive structure according to claim 1, characterized in that the occupancy rate of the fiber structure layer on the surface is 20% or more. The adhesive structure according to claim 1, characterized in that the adsorption rate of particles having a particle diameter of 1 μm or more and 30 μm or less is 5% or more. The adhesive structure according to claim 1, characterized in that the static friction coefficient against silicon is 0.30 or more. A method for producing the bonded structure according to any one of claims 1 to 6, comprising the steps of:
A method for manufacturing an adhesive structure, comprising: a pretreatment step of forming a mirror-finished metal surface on the surface of the base material; an anodizing step of anodizing the metal surface; and an etching step of dissolving and removing a portion of the anodized layer obtained, the method being characterized in that the anodizing step and the etching step are repeated multiple times.

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