JP2025004388A - Coating treatment method, coating treatment apparatus, and substrate treatment system - Google Patents

Abstract

To prevent adhesion of metal in processing liquid from adhering to a peripheral part of a substrate when applying the processing liquid for forming a metal containing coating film to the substrate.SOLUTION: A coating processing method for forming a metal containing coating film onto a front surface of a substrate, comprises the steps of: (A) forming a masking film at a front surface peripheral part of the substrate by supplying masking liquid to the substrate; (B) forming the metal containing coating film on the front surface of the substrate by supplying metal containing coating liquid to the substrate; (C) removing the metal containing coating film at the front surface peripheral edge part by supplying first removing liquid for solving the metal containing film to the front surface peripheral part of the substrate; (D) supplying second removing liquid for solving the masking film to the substrate after Step (C) step to remove the masking film; and (E) irradiating an ultraviolet radiation to the masking film under an atmosphere of an inactive gas that does not generate an oxygen radical after Step (B) and before Step (C).SELECTED DRAWING: Figure 7

Description

This disclosure relates to a coating processing method, a coating processing apparatus, and a substrate processing system.

Patent Document 1 discloses a peripheral coating device that applies a coating liquid to the peripheral portion of a substrate to form a coating film.

JP 2014-110386 A

The technology disclosed herein is a coating method for forming a metal-containing coating film on the surface of a substrate, comprising: (A) a step of supplying a masking liquid to the substrate to form a masking film on the peripheral surface of the substrate; (B) a step of supplying a metal-containing coating liquid to the substrate to form the metal-containing coating film on the surface of the substrate; (C) a step of supplying a first removal liquid that dissolves the metal-containing coating film to the peripheral surface of the substrate to remove the metal-containing coating film on the peripheral surface of the substrate; and (D) after the step (C), a step of supplying a second removal liquid that dissolves the masking film to the substrate to remove the masking film, and (E) after the step (B) and before the step (C), a step of irradiating the masking film with ultraviolet light in an atmosphere of an inert gas that does not generate oxygen radicals.

One aspect of the present disclosure is to prevent metal in a treatment liquid for forming a metal-containing coating film from adhering to the peripheral edge of a substrate when the treatment liquid is applied to the substrate.

According to the present disclosure, when a treatment liquid for forming a metal-containing coating film is applied to a substrate, it is possible to prevent the metal in the treatment liquid from adhering to the peripheral edge of the substrate.

1 is an explanatory diagram showing an outline of an internal configuration of a coating and developing system as a substrate processing system including a coating processing apparatus according to an embodiment of the present invention; 2 is a diagram showing an outline of the internal configuration of the coating and developing system shown in FIG. 1 on the front side. 2 is a diagram showing an outline of the internal configuration of the coating and developing system shown in FIG. 1 on the front side. 1 is a vertical cross-sectional view showing an outline of a configuration of a hard mask film forming apparatus. 1 is a cross-sectional view showing an outline of the configuration of a hard mask film forming apparatus. 2 is a flowchart for explaining an example of a process performed by the coating and developing system of FIG. 1 . 1 is a flowchart illustrating an example of a hard mask film forming process using a hard mask film forming apparatus. 1A to 1C are explanatory views showing the operation of the hard mask film forming apparatus during a hard mask film forming process. 1A to 1C are explanatory views showing the operation of the hard mask film forming apparatus during a hard mask film forming process. 1A to 1C are explanatory views showing the operation of the hard mask film forming apparatus during a hard mask film forming process. 1A to 1C are explanatory views showing the operation of the hard mask film forming apparatus during a hard mask film forming process. 1A to 1C are explanatory views showing the operation of the hard mask film forming apparatus during a hard mask film forming process. 1A to 1C are explanatory views showing the operation of the hard mask film forming apparatus during a hard mask film forming process. FIG. 11 is a longitudinal sectional view showing an outline of a configuration example of a hard mask film forming apparatus according to a second embodiment. 15 is a flowchart for explaining an example of a hard mask film forming process using the hard mask film forming apparatus of FIG. 14 . 13A and 13B are diagrams showing another example of the form of ultraviolet irradiation on the masking film on the bevel of the wafer. 11A and 11B are diagrams showing another example of the form of ultraviolet irradiation on the masking film on the peripheral portion of the surface of the wafer. 13A to 13C are diagrams showing another example of the form of ultraviolet irradiation on the masking film on the peripheral portion of the back surface of the wafer.

In the manufacturing process of semiconductor devices, etc., a photolithography process is performed on a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer") to form a resist pattern on the substrate. Then, using this resist pattern as a mask, the layer to be processed is etched to form the desired pattern in the layer to be processed.

However, with the miniaturization of semiconductor devices, etching with a high aspect ratio is required when etching the layer to be processed. A known technique for this purpose is to form a hard mask film, which has a higher etching resistance than a resist film, as an underlying film of the resist film, and to etch using the hard mask film as a mask. In addition, with the emergence of 3D NAND devices, there is a demand for hard mask films with higher etching resistance. For example, some hard mask films contain metal.

The hard mask film is formed, for example, by applying a treatment liquid for forming the hard mask film to the surface of the substrate. Specifically, the treatment liquid is applied to the surface of the substrate and then the substrate is heated. However, when the hard mask film is formed in this manner, the treatment liquid may also adhere to the peripheral portion of the substrate. Metal in the treatment liquid that adheres to the peripheral portion of the substrate may adversely affect the substrate and the device used with the substrate, and is difficult to remove with a cleaning liquid. For example, even if the peripheral portion of the hard mask film is dissolved and removed after the hard mask film is formed, the metal may remain on the peripheral portion, and the remaining metal is difficult to remove with a cleaning liquid or the like.

One possible countermeasure is to form a protective film on the periphery of the substrate before forming a metal-containing hard mask film. However, some protective films are dissolved by the solvent in the treatment liquid used to form the hard mask film during hard mask film formation, making it impossible to adequately cover the periphery of the substrate.

The above points also apply to metal-containing coating films (e.g., metal-containing resist films) used in photolithography processing other than metal-containing hard masks.

Therefore, the technology disclosed herein prevents the metal in the liquid from adhering to the peripheral edge of the substrate when the treatment liquid for forming a metal-containing coating film, i.e., the metal-containing coating liquid, is applied to the substrate.

The coating processing apparatus, substrate processing system, and coating processing method according to this embodiment will be described below with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configurations are given the same reference numerals to avoid redundant description.

First Embodiment
<Coating and developing system>
Fig. 1 is an explanatory diagram showing an outline of the internal configuration of a coating and developing system as a substrate processing system including a coating processing apparatus according to the present embodiment. Fig. 2 and Fig. 3 are diagrams showing an outline of the internal configuration of the coating and developing system from the front side and rear side, respectively.

As shown in Figures 1 to 3, the coating and developing system 1 has a cassette station 2 where cassettes C, which are containers capable of housing multiple wafers W, are loaded and unloaded, and a processing station 3 equipped with multiple processing devices that perform predetermined processes such as resist coating. The coating and developing system 1 also has an interface station 5 that is provided between the processing station 3 and the exposure device 4 and transfers the wafer W to and from the exposure device 4. The coating and developing system 1 has a configuration in which the cassette station 2, processing station 3, and interface station 5 are integrally connected.

The cassette station 2 is divided, for example, into a cassette loading/unloading section 10 and a wafer transport section 11. For example, the cassette loading/unloading section 10 is provided at the end of the coating and developing system 1 on the negative Y-direction side (left direction in FIG. 1). The cassette loading/unloading section 10 is provided with a cassette mounting table 12. A plurality of mounting plates 13, for example four mounting plates 13, are provided on the cassette mounting table 12. The mounting plates 13 are arranged in a row in the horizontal X-direction (up and down direction in FIG. 1). The cassettes C can be placed on these mounting plates 13 when they are loaded or unloaded from the outside of the coating and developing system 1.

The wafer transport section 11 is provided with a transport device 20 that transports the wafer W. The transport device 20 is configured to be freely movable on a transport path 21 that extends in the X direction. The transport device 20 is also freely movable in the vertical direction and around the vertical axis (θ direction), and can transport the wafer W between the cassette C on each mounting plate 13 and a transfer device in the third block G3 of the processing station 3, which will be described later.

The processing station 3 is provided with multiple blocks, for example, the first to fourth blocks G1, G2, G3, and G4, each equipped with various devices. For example, the first block G1 is provided on the front side of the processing station 3 (the negative X-direction side in FIG. 1), and the second block G2 is provided on the rear side of the processing station 3 (the positive X-direction side in FIG. 1). The third block G3 is provided on the cassette station 2 side of the processing station 3 (the negative Y-direction side in FIG. 1), and the fourth block G4 is provided on the interface station 5 side of the processing station 3 (the positive Y-direction side in FIG. 1).

In the first block G1, as shown in FIG. 2, multiple liquid processing devices, such as a development processing device 30, a hard mask film forming device 31 as a coating processing device, and a resist coating device 32, are arranged in this order from the bottom.

The developing treatment device 30 performs a developing treatment on the wafer W. Specifically, the developing treatment device 30 develops the resist film on the wafer W that has been subjected to a post-exposure bake (PEB) treatment.

The hard mask film forming device 31 performs a hard mask film forming process on the wafer W to form a hard mask film as a metal-containing coating film using a metal-containing coating liquid, which is a processing liquid for forming a metal-containing coating film.

The resist coating device 32 performs a resist coating process in which a resist liquid is applied to the wafer W to form a resist film.

For example, three developing treatment devices 30, three hard mask film forming devices 31, and three resist coating devices 32 are arranged horizontally. The number and arrangement of the developing treatment devices 30, the hard mask film forming devices 31, and the resist coating devices 32 can be selected arbitrarily.

In the development processing device 30, the hard mask film forming device 31, and the resist coating device 32, a predetermined processing liquid is applied onto the wafer W, for example, by a spin coating method. In the spin coating method, for example, the processing liquid is supplied onto the wafer W from a nozzle, and the wafer W is rotated to diffuse the processing liquid onto the surface of the wafer W.

For example, in the second block G2, as shown in FIG. 3, heat treatment devices 40 for performing heat treatment on the wafer W are arranged vertically and horizontally. The number and arrangement of the heat treatment devices 40 can be selected as desired. The heat treatment device 40 performs a hard mask bake process for heating the wafer W after the hard mask film formation process and before the resist coating process. The heat treatment device 40 also performs a pre-baking process (hereinafter referred to as "PAB process") for heating the wafer W after the resist coating process, a PEB process for heating the wafer W after the exposure process, and a post-baking process (hereinafter referred to as "POST process") for heating the wafer W after the development process.

For example, the third block G3 is provided with a plurality of transfer devices 50. The fourth block G4 is provided with a plurality of transfer devices 60.

As shown in FIG. 1, a wafer transfer area D is formed in the area surrounded by the first block G1 to the fourth block G4. In the wafer transfer area D, a transfer device 70 is disposed as a substrate transfer device for transferring, for example, a wafer W.

The transfer device 70 has a transfer arm 70a that can move, for example, in the Y direction, the θ direction, and the vertical direction. The transfer device 70 moves the transfer arm 70a holding the wafer W within the wafer transfer area D, and can transfer the wafer W to a predetermined device in the surrounding first block G1, second block G2, third block G3, and fourth block G4. For example, multiple transfer devices 70 are arranged vertically as shown in FIG. 3, and can transfer the wafer W to a predetermined device at approximately the same height in each of the blocks G1 to G4.

In addition, a shuttle transfer device 71 is provided in the wafer transfer area D to transfer the wafer W linearly between the third block G3 and the fourth block G4.

The shuttle transport device 71 moves the supported wafer W linearly in the Y direction, and can transport the wafer W between the transfer device 50 in the third block G3 and the transfer device 60 in the fourth block G4, which are at approximately the same height.

As shown in FIG. 1, a transfer device 72 is provided on the positive X-direction side of the third block G3. The transfer device 72 has a transfer arm 72a that can move, for example, in the θ direction and in the vertical direction. The transfer device 72 can move the transfer arm 72a holding the wafer W up and down to transfer the wafer W to each delivery device 50 in the third block G3.

The interface station 5 is provided with a transfer device 73 and a delivery device 74. The transfer device 73 has a transfer arm 73a that is movable, for example, in the θ direction and in the vertical direction. The transfer device 73 holds a wafer W on the transfer arm 73a and can transfer the wafer W between each delivery device 60, delivery device 101, and exposure device 4 in the fourth block G4.

The coating and developing system 1 described above is provided with a control device 6. The control device 6 is, for example, a computer equipped with a processor such as a CPU and a memory, and has a program storage unit (not shown). The program storage unit stores a program including commands for controlling the operation of the drive systems of the various processing devices and various transport devices described above, and for controlling the processing by the coating and developing system 1.

The control device 6 may also function as a control unit for the hard mask film forming device 31. In this case, the program storage unit also stores a program including instructions for controlling the operation of the drive system of the hard mask film forming device 31 and controlling the processing by the hard mask film forming device 31.

The above program may be recorded on a computer-readable storage medium M and installed in the control device 6 from the storage medium M. The storage medium M may be temporary or non-temporary.

In the above, the coating and developing system 1 is directly connected to the exposure apparatus 4 and transports the wafer W between the interface station 5 and the exposure apparatus 4, but the substrate processing system according to the present disclosure does not need to be directly connected to the exposure apparatus 4.
In this case, for example, the wafer W is transferred from the cassette station 2 to the processing station 3, where the necessary processing is performed, and then transferred back to the cassette station 2 for removal from the system. Also, in this case, any of the above-mentioned various processing devices that are not used for the necessary processing may be omitted from the substrate processing system, and some of the processing that can be performed by the various processing devices in the substrate processing system may not be performed.

<Hard mask film forming apparatus 31>
Next, the configuration of the above-mentioned hard mask film forming apparatus 31 will be described with reference to Figures 4 and 5. Figures 4 and 5 are a vertical cross-sectional view and a horizontal cross-sectional view, respectively, showing an outline of an example of the configuration of the hard mask film forming apparatus 31.

The hard mask film forming apparatus 31 has a process vessel 120 whose interior can be sealed as shown in FIG. 4 and FIG. 5. A loading/unloading port (not shown) for the wafer W is formed on the side of the process vessel 120, and an opening/closing shutter (not shown) is provided at the loading/unloading port.

A spin chuck 121 is provided in the processing vessel 120 as a substrate holder that holds the wafer W. Specifically, the spin chuck 121 is a rotary holder that holds and rotates the wafer W, and more specifically, holds the wafer W and rotates it around the vertical axis P.

The spin chuck 121 has a horizontal upper surface, and the upper surface is provided with a suction port (not shown) for sucking in, for example, the wafer W. The wafer W can be held on the spin chuck 121 by suction from this suction port.

The spin chuck 121 is connected to a chuck drive mechanism 122. The chuck drive mechanism 122 has a rotation drive source (not shown) such as a motor that generates a drive force for rotating the spin chuck 121 around the vertical axis P. The rotation of the spin chuck 121 by the chuck drive mechanism 122 rotates the wafer W around the vertical axis P.

Furthermore, the chuck driving mechanism 122 is provided with a driving source such as a cylinder that generates a driving force for lifting and lowering the spin chuck 121. The spin chuck 121 is lifted and lowered by the chuck driving mechanism 122, whereby the wafer W is lifted and lowered.
The chuck driving mechanism 122 is controlled by the control device 6 serving as a control unit of the hard mask film forming apparatus 31 .

Lift pins 123 for supporting the wafer W from below and lifting and lowering the wafer W are provided so as to surround the lower side of the spin chuck 121. The lift pins 123 are connected to a pin drive mechanism 124. The pin drive mechanism 124 has a drive source (not shown) such as a motor that generates a drive force for lifting and lowering the lift pins 123. The pin drive mechanism 124 allows the lift pins 123 to protrude to a position higher than the upper surface of the spin chuck 121, so that the wafer W can be transferred to and from the spin chuck 121.
The pin drive mechanism 124 is controlled by the control device 6 .

A cup 130 is also provided to surround the wafer W held by the spin chuck 121. The cup 130 receives and collects liquid that splashes or falls from the wafer W.

The cup 130 has an outer cup 131 and an inner cup 132. The outer cup 131 surrounds the outer lateral side of the spin chuck 121. The inner cup 132 is located on the inner lateral side of the outer cup 131, below the wafer W held by the spin chuck 121.

The cup 130 is open at the top, specifically, the top of the outer cup 131 is open, and the wafer W can be transferred to the spin chuck 121 through the opening. A gap 133 that forms a discharge path is formed between the inner peripheral surface of the outer cup 131 and the outer peripheral surface of the inner cup 132.
The bottom of the cup 130 is provided with an exhaust port 134 for exhausting the inside of the cup 130 and a drain port 135 for discharging the treatment liquid collected in the cup 130 .

As shown in FIG. 5, rails 150a, 150b are formed on the negative X-direction (downward in FIG. 5) side of cup 130, extending along the Y-direction (left-right direction in FIG. 5). Rails 150a, 150b are formed, for example, from the outside of cup 130 on the negative Y-direction (leftward in FIG. 5) side to the outside of cup 130 on the positive Y-direction (rightward in FIG. 5). Rail 150a is provided with two arms 151, 153, and rail 150b is provided with one arm 152.

The first arm 151 supports a first application nozzle 161 as a first application part, a second application nozzle 162 as a second application part, a first removal nozzle 171 as a first removal part, and a second removal nozzle 172 as a second removal part.

The first application nozzle 161 supplies masking liquid, which is a processing liquid for forming a masking film, to the front surface of the wafer W held by the spin chuck 121 (specifically, to the peripheral portion of the front surface). As described below, the masking film formed from the masking liquid is irradiated with ultraviolet light in an atmosphere of an inert gas that does not generate oxygen radicals, and in a subsequent process, is irradiated with ultraviolet light in an atmosphere that may generate oxygen radicals. The masking liquid and masking film are, for example, a negative photoresist and a negative photoresist film, respectively.

The second coating nozzle 162 supplies a metal-containing coating liquid to the surface of the wafer W held by the spin chuck 121. The metal-containing coating liquid contains an organic solvent as a solvent in addition to the metal. The organic solvent in the metal-containing coating liquid can dissolve the masking film before ultraviolet irradiation in the inert gas atmosphere, but does not dissolve the masking film after ultraviolet irradiation in the inert gas atmosphere.

The first removal nozzle 171 supplies a first removal liquid that dissolves the hard mask film to the surface (specifically, the peripheral surface) of the wafer W held by the spin chuck 121. The first removal liquid is, for example, an organic solvent. That is, the masking film after ultraviolet irradiation in an inert gas atmosphere is not dissolved by the first removal liquid.

The second removal nozzle 172 supplies a second removal liquid that dissolves the masking film, i.e., the protective film, to the surface (specifically, the peripheral portion of the surface) of the wafer W held by the spin chuck 121. The second removal liquid is, for example, a developer or organic solvent for the negative photoresist discharged from the first application nozzle 161.

The first arm 151 is movable on the rail 150a by the moving mechanism 181. The moving mechanism 181 has a driving source (not shown) such as a motor that generates a driving force for moving the first arm 151 along the rail 150a. When the first arm 151 moves on the rail 150a by the moving mechanism 181, the first application nozzle 161, the second application nozzle 162, the first removal nozzle 171, and the second removal nozzle 172 can move from a waiting section 182 installed outside the cup 130 on the negative Y-direction side to above the wafer W in the cup 130. The moving mechanism 181 is also provided with a driving source (not shown) that generates a driving force for lifting and lowering the first arm 151. When the first arm 151 moves up and down by the moving mechanism 181, the first application nozzle 161, the second application nozzle 162, the first removal nozzle 171, and the second removal nozzle 172 move up and down.
The moving mechanism 181 is controlled by the control device 6 .

A supply source (not shown) of masking liquid is connected to the first application nozzle 161. A supply pipe (not shown) connecting the first application nozzle 161 and the supply source is provided with a group of supply devices (not shown) for controlling the supply of masking liquid from the supply source to the first application nozzle 161. The group of supply devices includes, for example, a supply valve that switches between supply and stop of the masking liquid and a flow rate adjustment valve that adjusts the flow rate of the masking liquid.
The above-mentioned supply devices are controlled by a control device 6 .

A supply source (not shown) of the metal-containing coating liquid is connected to the second coating nozzle 162. A supply pipe (not shown) connecting the second coating nozzle 162 and the supply source is provided with a group of supply devices (not shown) for controlling the supply of the metal-containing coating liquid from the supply source to the second coating nozzle 162. The group of supply devices includes, for example, a supply valve that switches between supply and stop of the metal-containing coating liquid and a flow rate regulating valve that adjusts the flow rate of the metal-containing coating liquid.
The above-mentioned supply devices are controlled by a control device 6 .

A supply source (not shown) of the first removal liquid is connected to the first removal nozzle 171. A supply pipe (not shown) connecting the first removal nozzle 171 and the supply source is provided with a supply device group (not shown) for controlling the supply of the first removal liquid from the supply source to the first removal nozzle 171. The supply device group includes, for example, a supply valve that switches between supply and stop of the first removal liquid and a flow rate adjustment valve that adjusts the flow rate of the first removal liquid.
The above-mentioned supply devices are controlled by a control device 6 .

A supply source (not shown) of the second removal liquid is connected to the second removal nozzle 172. A supply pipe (not shown) connecting the second removal nozzle 172 and the supply source is provided with a supply device group (not shown) for controlling the supply of the second removal liquid from the supply source to the second removal nozzle 172. The supply device group includes, for example, a supply valve that switches between supply and stop of the second removal liquid and a flow rate adjustment valve that adjusts the flow rate of the second removal liquid.
The above-mentioned supply devices are controlled by a control device 6 .

The second arm 152 supports an irradiation nozzle 190 as an irradiation unit. The irradiation nozzle 190 irradiates the surface of the wafer W held by the spin chuck 121 with ultraviolet light. Specifically, the irradiation nozzle 190 irradiates the peripheral surface portion of the wafer W with ultraviolet light from a position on the surface side of the wafer W held by the spin chuck 121. The wavelength of the ultraviolet light irradiated from the irradiation nozzle 190 is, for example, 150 to 250 nm. The irradiation nozzle 190 has, for example, a light source (not shown) that emits ultraviolet light. This light source is controlled by the control device 6.

The second arm 152 is movable on the rail 150b by a moving mechanism 191. The moving mechanism 191 has a driving source (not shown) such as a motor that generates a driving force for moving the second arm 152 along the rail 150b. The second arm 152 moves on the rail 150b by the moving mechanism 191, so that the irradiation nozzle 190 can move from the outside of the cup 130 on the positive Y-direction side to above the wafer W in the cup 130. The moving mechanism 191 is also provided with a driving source (not shown) that generates a driving force for raising and lowering the second arm 152. The second arm 152 is raised and lowered by the moving mechanism 191, so that the irradiation nozzle 190 is raised and lowered.
The moving mechanism 191 is controlled by the control device 6 .

A gas nozzle 200 serving as a gas supply unit is supported on the third arm 153. The gas nozzle 200 supplies an inert gas to the surface of the wafer W held by the spin chuck 121. Specifically, the gas nozzle 200 supplies an inert gas to a position on the surface side of the wafer W held by the spin chuck 121 and to the peripheral portion of the surface of the wafer W. The inert gas supplied from the gas nozzle 200 is a gas that does not generate oxygen radicals, specifically, a gas that does not generate oxygen radicals when irradiated with ultraviolet light, i.e., a gas that does not contain oxygen, such as nitrogen gas or helium gas.

The third arm 153 is movable on the rail 150a by a moving mechanism 201. The moving mechanism 201 has a driving source (not shown) such as a motor that generates a driving force for moving the third arm 153 along the rail 150a. The third arm 153 is moved on the rail 150a by the moving mechanism 201, so that the gas nozzle 200 can move from the outside of the cup 130 on the positive Y-direction side to above the wafer W in the cup 130. The moving mechanism 201 is also provided with a driving source (not shown) that generates a driving force for lifting and lowering the third arm 153. The gas nozzle 200 is lifted and lowered by the moving mechanism 201 lifting and lowering the third arm 153.
The moving mechanism 201 is controlled by the control device 6 .

A supply source (not shown) of an inert gas that does not generate oxygen radicals is connected to the gas nozzle 200. A supply pipe (not shown) connecting the gas nozzle 200 and the supply source is provided with a group of supply devices (not shown) for controlling the supply of the inert gas from the supply source to the gas nozzle 200. The group of supply devices includes, for example, a supply valve that switches between supply and stop of the inert gas and a flow rate adjustment valve that adjusts the flow rate of the inert gas.
The above-mentioned supply devices are controlled by a control device 6 .

In addition, an air supply section 125 is provided at the top of the processing vessel 120 to supply clean air from the FFU (not shown) downward as a downflow.

This hard mask film forming device 31 is connected to a control device 6, which controls the moving mechanisms 181, 191, 201, the aforementioned supply equipment group related to the supply of masking liquid and metal-containing coating liquid, the light source of the irradiation nozzle 190, etc., to form a hard mask film that covers the entire surface of the wafer W except for the peripheral portion. This coating film is used, for example, as a protective film for the peripheral portion of the resist pattern.

<Wafer Processing>
Next, a description will be given of an example of wafer processing using the coating and developing system 1. Fig. 6 is a flow chart for explaining an example of processing by the coating and developing system 1. Note that each of the following steps is performed under the control of the control device 6.

In wafer processing using the coating and developing system 1, as shown in FIG. 6, for example, first, a hard mask film forming process is performed on a wafer W (step S1).
Specifically, for example, the wafer W to be processed is removed from the cassette C by the transfer device 20 and transferred to the delivery device 50 in the third block G3 of the processing station 3. Next, the wafer W is transferred by the transfer device 70 to the heat treatment device 40 in the second block G2 where it is subjected to temperature adjustment processing. Thereafter, the wafer W is transferred by the transfer device 70 to the hard mask film forming device 31 in the first block G1 where it is subjected to hard mask film formation processing. A more specific example of step S1 will be described later.

Next, the wafer W is subjected to a hard mask bake process (step S2).
Specifically, for example, the wafer W is transferred to the heat treatment device 40 by the transfer device 70, and a hard mask bake process is performed on the wafer W. As a result, the hard mask film on the wafer W is solidified and exhibits sufficient etching resistance.

Thereafter, the wafer W is subjected to a resist coating process (step S3).
Specifically, the wafer W is transferred by the transfer device 70 to another heat treatment device 40, where it is subjected to a temperature adjustment process. Next, the wafer W is transferred to the resist coating device 32, where it is subjected to a resist coating process. As a result, a resist film is formed on the wafer W. Thereafter, the wafer W is transferred by the transfer device 70 to the heat treatment device 40, where it is subjected to a PAB process.

Next, the wafer W is subjected to an exposure process (step S4).
Specifically, the wafer W is transferred to the transfer device 50 in the third block G3 by the transfer device 70. Next, the wafer W is transferred to another transfer device 50 by the transfer device 72, and is transferred to the transfer device 60 in the fourth block G4 by the shuttle transfer device 80. Thereafter, the wafer W is transferred to the exposure device 4 by the transfer device 73 in the interface station 5, and is subjected to an exposure process with a predetermined pattern.

Next, the wafer W is subjected to a development process (step S5).
Specifically, for example, first, the wafer W is transferred to the delivery device 60 in the fourth block G4 by the transfer device 73. Thereafter, the wafer W is transferred to the heat treatment device 40 by the transfer device 70 and subjected to the PEB treatment.
Subsequently, the wafer W is transferred by the transfer device 70 to the developing treatment device 30, where it is developed. After the development is completed, the wafer W is transferred by the transfer device 70 to the heat treatment device 40, where it is subjected to POST treatment.
Thereafter, the wafer W is transferred by the transfer device 70 to the delivery device 50 in the third block G3, and then transferred by the transfer device 20 in the cassette station 2 to the cassette C on a predetermined mounting plate 13.

This completes the entire wafer processing sequence using the coating and developing system 1.

<Hard mask film formation process>
A more specific example of the hard mask film formation process using the hard mask film formation apparatus 31 in the above-mentioned step S1 will be described. Fig. 7 is a flow chart for describing the more specific example. Figs. 8 to 13 are explanatory diagrams showing the operation of the hard mask film formation apparatus 31 during the hard mask film formation process. Note that each of the following steps is performed under the control of the control device 6. Also, during the hard mask film formation process, clean air is continuously supplied as a downflow from the air supply part 125.

As shown in FIG. 7, for example, first, the wafer W is carried into the hard mask film forming apparatus 31 (step S11).
Specifically, for example, the wafer W that has been subjected to the temperature adjustment process is loaded into the processing vessel 120 through a load/unload port (not shown) by the transfer device 70. Thereafter, the wafer W is delivered to the spin chuck 121 in the cup 130 by lifting and lowering the lift pins 123, and is held by suction.

Next, a masking liquid is supplied to the wafer W, and a masking film F1 is formed on the peripheral surface of the wafer W, as shown in FIG. 8 (step S12).

Specifically, a masking liquid is supplied to the peripheral surface of the wafer W rotating around the vertical axis P, and a masking film F1 is formed to cover the peripheral surface.

More specifically, the first coating nozzle 161 is moved to above the peripheral portion of the wafer W. Furthermore, the wafer W held by the spin chuck 121 is rotated around the vertical axis P. During this rotation, a masking liquid is discharged from the first coating nozzle 161 onto the peripheral portion of the front surface of the wafer W. As a result, a masking film F1 is formed that covers the entire peripheral portion of the front surface of the wafer W. The formed masking film F1 may also cover the bevel including the edge face of the wafer W. That is, a masking film may also be formed on the bevel of the wafer W by this process.
The supply of the masking liquid from the first coating nozzle 161 is stopped, for example, after a predetermined time has elapsed since the start of the supply. Thereafter, the wafer W is rotated in a state in which the masking liquid or other processing liquids are not being supplied, and thus the masking film F1 may be dried.
When supplying the masking liquid, the first application nozzle 161 may be inclined so that the masking liquid is supplied from the center of the wafer W toward the outside.

Next, the masking film F1 is irradiated with ultraviolet light in an atmosphere of an inert gas that does not generate oxygen radicals (step S13).

Specifically, as shown in FIG. 9, the inert gas is supplied from a gas nozzle 200 located on the surface side of the wafer W to the peripheral surface of the wafer W rotating around a vertical axis P, while ultraviolet light is irradiated from an irradiation nozzle 190 located on the surface side of the wafer W. This forms a masking film F2 with at least the surface layer solidified (hereinafter, sometimes referred to as a solidified masking film F2).

More specifically, the irradiation nozzle 190 and the gas nozzle 200 are moved to above the peripheral portion of the wafer W. The wafer W held by the spin chuck 121 continues to rotate around the vertical axis P. During this rotation, the inert gas is sprayed from the gas nozzle 200 onto the masking film F1 on the peripheral portion of the front surface of the wafer W, and ultraviolet light is irradiated from the irradiation nozzle 190. As a result, at least the surface layer of the masking film F1 is solidified, that is, the masking film F1 is made insoluble in the first removal liquid and the solvent in the metal-containing coating liquid, and a solidified masking film F2 is formed. When the masking film F1 is a negative photoresist film, at least the surface layer of the masking film F1 is exposed to ultraviolet light and solidified. Note that, since the surroundings of the masking film F1 during ultraviolet light irradiation are in an inert gas atmosphere that does not generate oxygen radicals, it is possible to suppress the removal of the masking film F1 due to a reaction with oxygen radicals during ultraviolet light irradiation. Oxygen radicals are generated, for example, when oxygen is decomposed by irradiation with ultraviolet light, and also when ozone generated from oxygen radicals or the like is decomposed.
The supply of the inert gas from the gas nozzle 200 and the irradiation of the ultraviolet light from the irradiation nozzle 190 may be started simultaneously, but the irradiation of the ultraviolet light may be started after the supply of the inert gas is started. This makes it possible to suppress the generation of oxygen radicals during the irradiation of the ultraviolet light.
The supply of the inert gas from the gas nozzle 200 and the irradiation of the ultraviolet light from the irradiation nozzle 190 are stopped, for example, after a predetermined time has elapsed from the start of the supply and irradiation.

If a masking film has also been formed on the bevel of the wafer W in the previous step S12, then in this step S13, the masking film on the bevel of the wafer W is also irradiated with ultraviolet light in the above-mentioned inert gas atmosphere. To ensure that the bevel is also irradiated with ultraviolet light, the position of the irradiation nozzle 190 or the angle of the optical axis may be configured to be changeable so that the irradiation position of the ultraviolet light can be adjusted.

Then, a metal-containing coating liquid is supplied to the wafer W, and a hard mask film F11 is formed on the surface of the wafer W, as shown in FIG. 10 (step S14).

Specifically, a metal-containing coating liquid is supplied to the surface of the wafer W rotating around the vertical axis P, and a hard mask film F11 is formed to cover the surface.

More specifically, the second coating nozzle 162 is moved to above the center of the wafer W. In addition, the wafer W held by the spin chuck 121 continues to rotate around the vertical axis P. During this rotation, the metal-containing coating liquid is discharged from the second coating nozzle 162 to the center of the surface of the wafer W. As a result, the metal-containing coating liquid is spread over the surface of the wafer W, and a hard mask film F11 is formed that covers the entire surface including the solidified masking film F2.
The supply of the metal-containing coating liquid from the second coating nozzle 162 is stopped, for example, after a predetermined time has elapsed since the start of the supply. Thereafter, the wafer W is rotated in a state in which the metal-containing liquid or other processing liquids are not being supplied, and thus the hard mask film F11 may be dried.

Next, a first removal liquid is supplied to the peripheral surface portion of the wafer W, and the hard mask film F11 on the peripheral surface portion is removed (step S15), as shown in FIG. 11.

Specifically, a first removal liquid is supplied to the peripheral surface portion of the wafer W rotating around the vertical axis P, and the hard mask film F11 (dotted line portion in FIG. 11) on the peripheral surface portion is removed.

More specifically, the first removal nozzle 171 is moved to above the peripheral portion of the wafer W. Furthermore, the wafer W held by the spin chuck 121 continues to rotate around the vertical axis P. During this rotation, the first removal liquid is discharged from the first removal nozzle 171 onto the peripheral portion of the front surface of the wafer W. This removes the portion of the masking film F1 located on the peripheral portion of the front surface of the wafer W. The masking film F1 is removed, for example, in such a manner that the solidified masking film F2 is exposed but the surface of the wafer W is not exposed.
The supply of the first removing liquid from the first removal nozzle 171 is stopped, for example, after a predetermined time has elapsed since the start of the supply. Thereafter, the wafer W may be rotated in a state in which the first removing liquid or other processing liquids are not being supplied, thereby drying the wafer W.
When supplying the first removing liquid, the first removal nozzle 171 may be inclined so that the first removing liquid is supplied from the center side of the wafer W toward the outside.

Next, the masking film is irradiated with ultraviolet light in an atmosphere capable of generating oxygen radicals (e.g., air atmosphere) (step S16).

Specifically, the solidified masking film F2 on the peripheral surface of the wafer W rotating around the vertical axis P is irradiated with ultraviolet light from an irradiation nozzle 190 located on the surface side of the wafer W without supplying an inert gas, and as shown in FIG. 12, the solidified portion is dissolved in the second removal liquid to form a masking film F3 (hereinafter, sometimes referred to as the masking film F3 after two irradiations).

More specifically, the irradiation nozzle 190 is moved to above the peripheral portion of the wafer W. In addition, the wafer W held by the spin chuck 121 continues to rotate around the vertical axis P. During this rotation, the solidified masking film F2 on the peripheral portion of the front surface of the wafer W is irradiated with ultraviolet light from the irradiation nozzle 190 without being sprayed with inert gas from the gas nozzle 200. As a result, the solidified portion of the solidified masking film F2 is solubilized in the second removal liquid. Specifically, the solidified portion of the solidified masking film F2 reacts with oxygen radicals generated by the ultraviolet light from the atmosphere surrounding the film F2, and is solubilized in the second removal liquid.
The irradiation of ultraviolet rays from the irradiation nozzle 190 is stopped, for example, after a predetermined time has elapsed since the start of the supply and irradiation.

If a masking film has also been formed on the bevel of the wafer W in the previous step S12, in this step S14, the masking film on the bevel of the wafer W is also irradiated with ultraviolet light in an atmosphere capable of generating oxygen radicals.

Then, a second removal liquid is supplied to the surface of the wafer W, and the masking film is removed (step S17).

Specifically, the second removal liquid is supplied to the peripheral surface of the wafer W rotating around the vertical axis P, and the portions of the masking film F12 that have been solidified and are solubilized in the second removal liquid after the second irradiation and the portions that have not been solidified are removed.

13, the second removal nozzle 172 is moved to above the peripheral portion of the wafer W. In addition, the wafer W held by the spin chuck 121 continues to rotate about the vertical axis P. During this rotation, the second removal liquid is discharged from the second removal nozzle 172 onto the peripheral portion of the front surface of the wafer W. As a result, the hard mask film F11 is not removed and the entire post-second irradiation masking film F3 is removed.
The supply of the second removing liquid from the second removal nozzle 172 is stopped, for example, after a predetermined time has elapsed since the start of the supply. Thereafter, the wafer W may be rotated in a state in which the second removing liquid or other processing liquids are not being supplied, thereby drying the wafer W.
When the second removing liquid is supplied, the second removing nozzle 172 may be inclined so that the second removing liquid is supplied from the center side of the wafer W toward the outside.

If a masking film was also formed on the bevel of the wafer W in the previous step S12, the masking film on the bevel of the wafer W is also removed in this step S15.

Thereafter, the wafer W is unloaded in the reverse order to the loading procedure (step S18), thereby completing a series of steps of the hard mask film formation process.
As described above, after the hard mask film formation process, the wafer W is subjected to a hard mask bake process.

<Main Effects of the Present Embodiment>
As described above, in this embodiment, after the formation of the masking film F1 and before the formation of the hard mask film F11, the masking film is irradiated with ultraviolet rays in an inert gas atmosphere that does not generate oxygen radicals. This ultraviolet irradiation can prevent the masking film from dissolving in the solvent in the metal-containing coating film. Therefore, the masking film can protect an appropriate portion of the peripheral surface of the wafer W from the metal-containing coating liquid. Therefore, when the metal-containing coating liquid is applied to the wafer W, the metal in the coating liquid can be prevented from adhering to the peripheral surface of the wafer W.

According to the present embodiment, the masking film formation, the hard mask film formation, the removal of the hard mask film on the peripheral surface of the wafer W, and the masking film removal can be performed in the same hard mask film forming apparatus 31. Specifically, these processes can be performed using the same cup 130 without transporting the wafer W outside the apparatus between processes. This can eliminate the time required to transport the wafer W, thereby improving throughput. Furthermore, compared to the case where an apparatus is provided for each of these processes, the number of apparatuses mounted in the coating and developing system 1 can be reduced, thereby reducing the cost and the footprint (i.e., reducing the area occupied) of the coating and developing system 1.
Furthermore, according to this embodiment, there is no need for a heat treatment after the masking film is formed and before the hard mask film is formed, and there is no need for a heat treatment after the hard mask film is formed and before the hard mask film is removed, or a heat treatment after the hard mask film is removed and before the masking film is removed. Therefore, the time required to transport the wafer W for these heat treatments can be omitted, and the apparatus for these heat treatments can be omitted. From this viewpoint, the throughput can be improved, and the cost and footprint of the coating and developing system 1 can be reduced.

In addition, in this embodiment, the inert gas is supplied from the gas nozzle 200 located on the front side of the wafer W held by the spin chuck 121. Unlike this embodiment, if the inert gas is supplied only from the gas nozzle located on the back side, the inert gas from the gas nozzle is unlikely to reach the peripheral portion of the front surface due to the presence of an air flow formed by at least one of the downflow from the gas supply unit 125 or exhaust through the gap 133, the exhaust port 134, etc. In contrast, in this embodiment, the inert gas is supplied from the gas nozzle 200 located on the front side of the wafer W, so the inert gas easily reaches the peripheral portion of the front surface, and the concentration of the inert gas on the peripheral portion of the front surface during ultraviolet irradiation can be made sufficiently high to the extent that oxygen radicals are not generated by ultraviolet irradiation.

Second Embodiment
FIG. 14 is a vertical cross-sectional view showing an outline of an example of the configuration of a hard mask film forming apparatus according to the second embodiment.
The hard mask film forming apparatus 31A in FIG. 14 includes a third application nozzle 211 as a third application unit, a third removal nozzle 212 as a third removal unit, an irradiation nozzle 213 as another irradiation unit, and a gas nozzle 214 as another gas supply unit, which are provided below the wafer W supported by the spin chuck 121, specifically, at a position below the wafer W.

The third application nozzle 211 supplies the masking liquid to the rear surface (specifically, the peripheral portion of the rear surface) of the wafer W held by the spin chuck 121 .
A supply source (not shown) of masking liquid is connected to the third application nozzle 211. A supply pipe (not shown) connecting the third application nozzle 211 and the supply source is provided with a supply device group (not shown) for controlling the supply of masking liquid from the supply source to the third application nozzle 211. The supply device group has, for example, a supply valve that switches between supply and stop of the masking liquid and a flow rate adjustment valve that adjusts the flow rate of the masking liquid.
The above-mentioned supply devices are controlled by a control device 6 .

The third removal nozzle 212 supplies the second removing liquid to the rear surface (specifically, the peripheral portion of the rear surface) of the wafer W held on the spin chuck 121 .
A supply source (not shown) of the second removal liquid is connected to the third removal nozzle 212. A supply pipe (not shown) connecting the third removal nozzle 212 and the supply source is provided with a supply device group (not shown) for controlling the supply of the second removal liquid from the supply source to the third removal nozzle 212. The supply device group includes, for example, a supply valve that switches between supply and stop of the second removal liquid and a flow rate adjustment valve that adjusts the flow rate of the second removal liquid.
The above-mentioned supply devices are controlled by a control device 6 .

The irradiation nozzle 213 irradiates the back surface of the wafer W held by the spin chuck 121 with ultraviolet light. Specifically, the irradiation nozzle 213 irradiates the peripheral edge of the back surface of the wafer W held by the spin chuck 121 with ultraviolet light from a position on the back surface side of the wafer W. The irradiation nozzle 190 has, for example, a light source (not shown) that emits ultraviolet light. This light source is controlled by the control device 6.

The gas nozzle 214 supplies an inert gas to the back surface of the wafer W held by the spin chuck 121. Specifically, the gas nozzle 214 supplies an inert gas to the peripheral edge of the back surface of the wafer W from a position on the back surface side of the wafer W held by the spin chuck 121.

An inert gas supply source (not shown) is connected to the gas nozzle 200. A supply pipe (not shown) connecting the gas nozzle 214 and the supply source is provided with a supply device group (not shown) for controlling the supply of the inert gas from the supply source to the gas nozzle 214. The supply device group includes, for example, a supply valve that switches between supply and stop of the inert gas and a flow rate adjustment valve that adjusts the flow rate of the inert gas.
The above-mentioned supply devices are controlled by a control device 6 .

<Hard mask film formation process>
An example of a hard mask film formation process using the hard mask film formation apparatus 31A will be described. Fig. 15 is a flow chart for explaining the above example. Note that each of the following steps is performed under the control of the control device 6. Also, during the hard mask film formation process, clean air is continuously supplied as a downflow from the air supply unit 125.

As shown in FIG. 15, for example, after the wafer W is first loaded into the hard mask film forming device 31 in step S11, a masking liquid is supplied to the wafer W, and a masking film is formed on the peripheral edge of the front surface and the peripheral edge of the back surface of the wafer W (step S12A).

Specifically, a masking liquid is supplied to the peripheral edge of the front surface and the peripheral edge of the back surface of the wafer W rotating around the vertical axis P, and a masking film is formed to cover the peripheral edge of the front surface and the peripheral edge of the back surface.

A more specific example of the formation of the masking film on the peripheral portion of the surface is as described above.
More specifically, with regard to the peripheral edge of the back surface, while the wafer W held by the spin chuck 121 is rotating around the vertical axis P, the masking liquid is discharged from the third application nozzle 211 onto the peripheral edge of the back surface of the wafer W. As a result, a masking film F1 that covers the entire peripheral edge of the back surface of the wafer W is formed.
The supply of masking liquid from the third application nozzle 211 is started at the same timing as the supply of masking liquid from the first application nozzle 161, and is stopped at the same timing, for example.
When supplying the masking liquid, the third application nozzle 211 is inclined so that the masking liquid is supplied from the center side of the wafer W toward the outside.

Next, the masking film on the front and back surfaces is irradiated with ultraviolet light in an inert gas atmosphere that does not generate oxygen radicals (step S13A).

Specifically, while the inert gas is supplied from gas nozzle 200 located on the front side of wafer W to the peripheral surface of wafer W rotating around vertical axis P, ultraviolet light is irradiated from irradiation nozzle 190 located on the front side of wafer W. Also, while the inert gas is supplied from gas nozzle 214 located on the back side of wafer W to the peripheral surface of rear side of wafer W, ultraviolet light is irradiated from irradiation nozzle 213 located on the back side of wafer W. As a result, at least the surface layer of the masking film on the peripheral surface and rear side is solidified.

A more specific example of the ultraviolet irradiation of the masking film on the peripheral surface portion is as described above.
More specifically, as for the rear surface peripheral portion, while the wafer W held by the spin chuck 121 continues to rotate about the vertical axis P, the inert gas is sprayed from the gas nozzle 214 onto the masking film on the rear surface peripheral portion of the wafer W, and ultraviolet light is irradiated from the irradiation nozzle 213. As a result, at least the surface layer of the masking film on the rear surface peripheral portion is solidified, that is, made insoluble in the first removal liquid and the solvent in the metal-containing coating liquid.
The supply of the inert gas from the gas nozzle 214 is started at the same timing as the supply of the gas from the gas nozzle 200, and is stopped at the same timing, for example.
Furthermore, the irradiation of ultraviolet light from the irradiation nozzle 213 is started at the same timing as the irradiation of ultraviolet light from the irradiation nozzle 190, and is stopped at the same timing, for example.

Then, a hard mask film is formed in step S14, and the hard mask on the peripheral surface is removed in step S15.

Next, the masking film on the front and back surfaces is irradiated with ultraviolet light in an atmosphere capable of generating oxygen radicals (step S16A).

Specifically, ultraviolet light is irradiated from an irradiation nozzle 190 located on the front side of the wafer W while no inert gas is being supplied to the peripheral surface of the wafer W rotating around the vertical axis P. Also, ultraviolet light is irradiated from an irradiation nozzle 213 located on the back side of the wafer W while no inert gas is being supplied to the peripheral surface of the wafer W. As a result, the masking film on the peripheral surface and the peripheral surface of the wafer W is irradiated with ultraviolet light, and at least the portion of the masking film solidified in step S13A is removed.

A more specific example of the ultraviolet irradiation of the masking film on the peripheral surface portion is as described above.
More specifically, with respect to the rear surface peripheral portion, while the wafer W held by the spin chuck 121 continues to rotate around the vertical axis P, the masking film is irradiated with ultraviolet light from the irradiation nozzle 213 without being sprayed with inert gas from the gas nozzle 214. As a result, at least the portion of the masking film solidified in step S13A reacts with oxygen radicals generated by the ultraviolet light, and is decomposed and removed.
The irradiation of ultraviolet light from the irradiation nozzle 213 is started at the same timing as the irradiation of ultraviolet light from the irradiation nozzle 190, for example, and is stopped at the same timing.

Then, a second removal liquid is supplied to the front and back surfaces of the wafer W, and the masking film on the front and back surfaces is removed (step S17A).

Specifically, the second removal liquid is supplied to the peripheral edge of the front surface and the peripheral edge of the back surface of the wafer W rotating about the vertical axis P, and the portion of the masking film remaining after step S16A is removed.

A more specific example of removing the masking film from the peripheral portion of the surface is as described above.
More specifically, with respect to the peripheral edge of the back surface, while the wafer W held by the spin chuck 121 is rotating around the vertical axis P, the third removal nozzle 212 ejects the second removal liquid onto the peripheral edge of the back surface of the wafer W. As a result, a masking film F1 that covers the entire peripheral edge of the back surface of the wafer W is formed.
The supply of the second removal liquid from the third removal nozzle 212 is started at the same timing as the supply of the second removal liquid from the second removal nozzle 172, for example, and is stopped at the same timing.
When the second removing liquid is supplied, the third removing nozzle 212 is inclined so that the second removing liquid is supplied from the center side of the wafer W toward the outside.

Then, the wafer W is unloaded in the reverse order to the procedure for loading the wafer W (step S18). This completes the series of hard mask film formation processes.

<Main Effects of the Present Embodiment>
According to this embodiment, it is also possible to prevent the masking film on the peripheral back surface of the wafer W from dissolving in the solvent in the metal-containing coating film. Therefore, an appropriate portion of the peripheral back surface of the wafer W can be protected from the metal-containing coating liquid by the masking film. Therefore, it is also possible to prevent the metal in the coating liquid from adhering to the peripheral back surface of the wafer W when the metal-containing coating liquid is applied to the wafer W.

<Other Examples of Forms of Ultraviolet Irradiation on Bevel>
FIG. 16 is a diagram showing another example of the manner in which the masking film on the bevel of the wafer W is irradiated with ultraviolet rays.
In the above example, ultraviolet light from the irradiation nozzle 190 is directly irradiated onto the masking film of the bevel of the wafer W held by the spin chuck 121. Alternatively, as shown in Fig. 16, ultraviolet light from the irradiation nozzle 190 may be reflected by a reflecting member 220 and irradiated onto the masking film of the bevel.

Reflecting member 220 is attached to cup 130A, specifically, to a portion facing the bevel of outer cup 131A.
Reflecting member 220 does not have to be attached to cup 130A. In this case, reflecting member 220 may be configured to be movable so that it is positioned inside cup 130A only when ultraviolet light is irradiated, and may be configured to have an inclination that is changeable so that the reflection angle can be adjusted.

In addition, ultraviolet light from an irradiation nozzle 213 located on the back side of the wafer W, rather than from an irradiation nozzle 190 located on the front side of the wafer W, may be reflected by a reflecting member 220 and irradiated onto the masking film of the bevel.

<Other examples of the form of ultraviolet irradiation to the peripheral portion of the surface>
FIG. 17 is a diagram showing another example of the manner in which the masking film on the peripheral surface of the wafer W is irradiated with ultraviolet rays.
In the above example, ultraviolet light is irradiated from the irradiation nozzle 190 located on the front side of the wafer W onto the masking film on the peripheral portion of the front surface of the wafer W held by the spin chuck 121. Alternatively, as shown in Fig. 17, ultraviolet light from an irradiation nozzle 213 located on the back side of the wafer W may be reflected by a reflecting member 220 and irradiated onto the masking film on the peripheral portion of the front surface of the wafer W. In this case, at least one of the inclination of the reflecting member 220 and the position of the irradiation nozzle 213 may be configured to be changeable so that the irradiation position on the peripheral portion of the front surface can be adjusted.
Even when the irradiation nozzle 190 located on the front side of the wafer W is not provided as in this example, it is preferable to irradiate the peripheral portion of the front side of the wafer W with ultraviolet light and to supply an inert gas to the peripheral portion of the front side from the gas nozzle 200 located on the front side of the wafer W. This is because the inert gas from the gas nozzle 214 located on the back side is unlikely to reach the peripheral portion of the front side of the wafer W due to the downflow from the gas supply unit 125 and the like.

<Other Examples of Forms of Irradiating the Peripheral Edge of the Back Surface with Ultraviolet Rays>
FIG. 18 is a diagram showing another example of the manner in which the masking film on the peripheral portion of the rear surface of the wafer W is irradiated with ultraviolet rays.
In the above example, ultraviolet rays are irradiated from the irradiation nozzle 213 located on the back surface side of the wafer W to the masking film on the peripheral edge of the back surface of the wafer W held by the spin chuck 121. Alternatively, as shown in Fig. 18, ultraviolet rays from an irradiation nozzle 190 located on the front surface side of the wafer W may be reflected by a reflecting member 220 to be irradiated to the masking film on the peripheral edge of the back surface of the wafer W. In this case, at least one of the inclination of the reflecting member 220 and the position of the irradiation nozzle 190 may be configured to be changeable so that the irradiation position on the peripheral edge of the back surface can be adjusted.

<Modification>
In the above examples, the metal-containing coating film and the metal-containing coating liquid are a hard mask film and a treatment liquid for forming the hard mask film, respectively. Alternatively, the metal-containing coating film and the metal-containing coating liquid may be a photosensitive metal-containing resist film and a metal-containing resist liquid, respectively.

In addition, although the above does not specifically explain the relationship between the gas nozzle 214 located on the back surface side of the wafer W and the inner cup 132, these may be configured separately or integrally.
Although no particular explanation has been given above regarding the angle of the gas nozzle 200, the gas nozzle 200 may be tilted so that the inert gas is supplied from the center side toward the outside of the wafer W. This makes it possible to prevent particles in the cup 130 from adhering to the center of the wafer W.

As described above, the first removal liquid is, for example, an organic solvent, and the second removal liquid is, for example, a developer or an organic solvent for the negative photoresist discharged from the first application nozzle 161. That is, the first removal liquid and the second removal liquid may be the same processing liquid. In the case where the same processing liquid is used, the second removal nozzle 172 may be omitted, and the first removal nozzle 171 may also serve as the second removal nozzle 172.

The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be combined in any manner. Such combinations will naturally provide the functions and effects of each of the components in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description in this specification.

Furthermore, the effects described in this specification are merely descriptive or exemplary and are not limiting. In other words, the technology disclosed herein may achieve other effects that are apparent to a person skilled in the art from the description in this specification, in addition to or in place of the above effects.

Note that the following configuration examples also fall within the technical scope of the present disclosure.
(1) A coating method for forming a metal-containing coating film on a surface of a substrate, comprising the steps of:
(A) supplying a masking liquid to the substrate to form a masking film on a peripheral surface of the substrate;
(B) supplying a metal-containing coating liquid to the substrate to form the metal-containing coating film on the surface of the substrate;
(C) supplying a first removal liquid that dissolves the metal-containing coating film to the peripheral portion of the surface of the substrate to remove the metal-containing coating film from the peripheral portion of the surface;
(D) after the step (C), supplying a second removal liquid that dissolves the masking film to the substrate to remove the masking film,
(E) A coating treatment method further comprising the step of irradiating the masking film with ultraviolet light in an inert gas atmosphere that does not generate oxygen radicals after the step (B) and before the step (C).
(2) (F) The coating method according to (1) above, further comprising a step of irradiating the masking film with ultraviolet light in an atmosphere capable of generating oxygen radicals after the step (C) and before the step (D).
(3) (G) The coating method according to (1) or (2) above, further comprising a step of heating the metal-containing coating film after the step (D).
(4) The coating method according to any one of (1) to (3), wherein a solvent in the metal-containing coating liquid dissolves the masking film before the (F) step.
(5) The coating processing method according to any one of (1) to (4), wherein the second removal liquid is an organic solvent.
(6) The step (A) includes forming the masking film also on the peripheral portion of the rear surface of the substrate;
The step (D) also removes the masking film from the peripheral edge of the back surface,
The coating method according to any one of (1) to (5), wherein in the step (E), the masking film on the peripheral edge portion of the back surface is also irradiated with ultraviolet light under the inert gas atmosphere.
(7) The coating method according to any one of (1) to (6), wherein the masking liquid is a negative photoresist liquid.
(8) The coating method according to any one of (1) to (7), wherein the metal-containing coating film is a hard mask film or a metal-containing resist film.
(9) The coating processing method described in (6), wherein the (E) step irradiates ultraviolet light to the peripheral portion of the front surface while supplying the inert gas to the peripheral portion of the front surface from a gas supply unit located on the front surface side of the substrate, and irradiates ultraviolet light to the peripheral portion of the back surface while supplying the inert gas to the peripheral portion of the back surface from another gas supply unit located on the back surface side of the substrate.
(10) The coating processing method described in (9), wherein the (E) step irradiates the peripheral portion of the front surface with ultraviolet light from an irradiation unit located on the front surface side, and irradiates the peripheral portion of the back surface with ultraviolet light from another irradiation unit located on the back surface side.
(11) In the step (A), the masking film is also formed on an end surface of the substrate,
The step (D) also removes the masking film on the end surface,
The coating method according to any one of (1) to (10), wherein in the step (E), the masking film on the end surface is also irradiated with ultraviolet light in the inert gas atmosphere.
(12) The coating method according to (11), wherein in the (E) step, ultraviolet light from an irradiation nozzle that irradiates the peripheral portion of the surface is reflected and irradiated onto the masking film on the end face.
(13) The coating processing method according to any one of (1) to (12), wherein the first removing liquid and the second removing liquid are the same processing liquid and are supplied from a common removing unit.
(14) A coating treatment apparatus for forming a metal-containing coating film on a surface of a substrate, comprising:
A substrate holder for holding the substrate;
a first coating unit that supplies a masking liquid to a surface of the substrate;
a second coating unit that supplies a metal-containing coating liquid to a surface of the substrate;
a first removal unit that supplies a first removal liquid that dissolves the metal-containing coating film formed from the metal-containing coating liquid onto a surface of the substrate;
a second removal unit that supplies a second removal liquid to the surface of the substrate, the second removal liquid dissolving a masking film formed from the masking liquid;
an irradiation unit that irradiates a surface of the substrate with ultraviolet light;
a gas supply unit that supplies an inert gas that does not generate oxygen radicals to the surface of the substrate;
A control unit,
The control unit is
(a) supplying the masking liquid to the substrate to form a masking film on a peripheral portion of a surface of the substrate;
(b) supplying the metal-containing coating liquid to the substrate to form the metal-containing coating film on the surface of the substrate;
(c) supplying the first removal liquid to the peripheral portion of the front surface of the substrate to remove the metal-containing coating film from the peripheral portion of the front surface;
(d) after the step (c), supplying the second removal liquid to the substrate and removing the masking film;
(e) a coating treatment apparatus further comprising a step of irradiating the masking film with ultraviolet light in the inert gas atmosphere after the step (b) and before the step (c).
(15) The control unit
(f) The coating treatment apparatus according to (13) above, further comprising a step of irradiating the masking film with ultraviolet light in an atmosphere capable of generating oxygen radicals after the step (c) and before the step (d).
(16) The coating treatment device according to (14) or (15) above;
a heat treatment device for heating the substrate after the step (d).
(17) A third coating unit that supplies the masking liquid to a back surface of the substrate held by the substrate holding unit; and
a third removal unit that supplies the second removal liquid to a rear surface of the substrate held by the substrate holder;
The step (a) includes forming the masking film also on the peripheral portion of the rear surface of the substrate;
The step (d) also removes the masking film from the peripheral edge of the back surface;
The coating treatment device according to (14) or (15), wherein in the step (e), the masking film on the peripheral edge portion of the back surface is also irradiated with ultraviolet light under the inert gas atmosphere.
(18) The gas supply unit supplies the inert gas to a surface of the substrate from a position on the surface side of the substrate,
Further, the inert gas supply unit supplies the inert gas to the rear surface of the substrate from a position on the rear surface side of the substrate,
The coating treatment apparatus described in (17), wherein the (e) step irradiates ultraviolet light to the peripheral portion of the front surface while supplying the inert gas to the peripheral portion of the front surface from the gas supply unit located on the front surface side of the substrate, and irradiates ultraviolet light to the peripheral portion of the back surface while supplying the inert gas to the peripheral portion of the back surface from another gas supply unit located on the back surface side of the substrate.
(19) The irradiation unit irradiates ultraviolet light onto the surface of the substrate from a position on the surface side of the substrate,
Further, the apparatus includes another irradiation unit that irradiates the rear surface of the substrate with ultraviolet light from a position on the rear surface side of the substrate,
The coating treatment device described in (18), wherein the (e) step irradiates the front surface peripheral portion with ultraviolet light from the irradiation unit located on the front surface side of the substrate, and irradiates the back surface peripheral portion with ultraviolet light from the other irradiation unit located on the back surface side of the substrate.
(20) The coating processing apparatus according to any one of (14) to (10), wherein the first removing liquid and the second removing liquid are the same processing liquid, and the first removing unit also serves as the second removing unit.

6 Control device 31, 31A Hard mask film forming device 121 Spin chuck 161 First application nozzle 162 Second application nozzle 171 First removal nozzle 172 Second removal nozzle 190 Irradiation nozzle 200 Gas nozzle 213 Irradiation nozzle 220 Reflection member F1 Masking film F11 Hard mask film W Wafer

Claims (20)

A coating treatment method for forming a metal-containing coating film on a surface of a substrate, comprising the steps of:
(A) supplying a masking liquid to the substrate to form a masking film on a peripheral surface of the substrate;
(B) supplying a metal-containing coating liquid to the substrate to form the metal-containing coating film on the surface of the substrate;
(C) supplying a first removal liquid that dissolves the metal-containing coating film to the peripheral portion of the surface of the substrate to remove the metal-containing coating film from the peripheral portion of the surface;
(D) after the step (C), supplying a second removal liquid that dissolves the masking film to the substrate to remove the masking film,
(E) A coating treatment method further comprising the step of irradiating the masking film with ultraviolet light in an inert gas atmosphere that does not generate oxygen radicals after the step (B) and before the step (C). The coating method according to claim 1, further comprising the step of irradiating the masking film with ultraviolet light in an atmosphere capable of generating oxygen radicals after the step (C) and before the step (D). (G) The coating method according to claim 1 or 2, further comprising a step of heating the metal-containing coating film after step (D). The coating method according to claim 1 or 2, wherein the solvent in the metal-containing coating liquid dissolves the masking film before step (F). The coating processing method according to claim 1 or 2, wherein the second removal liquid is an organic solvent. The step (A) includes forming the masking film also on the peripheral portion of the rear surface of the substrate,
The step (D) also removes the masking film from the peripheral edge of the back surface,
3. The coating method according to claim 1, wherein in the step (E), the masking film on the peripheral edge of the back surface is also irradiated with ultraviolet light in the inert gas atmosphere. The coating process method according to claim 1 or 2, wherein the masking liquid is a negative photoresist liquid. The coating process method according to claim 1 or 2, wherein the metal-containing coating film is a hard mask film or a metal-containing resist film. The coating process method according to claim 6, wherein the (E) step irradiates the peripheral edge of the front surface with ultraviolet light while supplying the inert gas to the peripheral edge of the front surface from a gas supply unit located on the front surface side of the substrate, and irradiates the peripheral edge of the back surface with ultraviolet light while supplying the inert gas to the peripheral edge of the back surface from another gas supply unit located on the back surface side of the substrate. The coating method according to claim 9, wherein the (E) step irradiates the peripheral portion of the front surface with ultraviolet light from an irradiation unit located on the front surface side, and irradiates the peripheral portion of the back surface with ultraviolet light from another irradiation unit located on the back surface side. The step (A) includes forming the masking film also on an end surface of the substrate,
The step (D) also removes the masking film on the end surface,
3. The coating method according to claim 1, wherein in the step (E), the masking film on the end surface is also irradiated with ultraviolet light in the inert gas atmosphere. The coating method according to claim 11, wherein step (E) reflects ultraviolet light from an irradiation nozzle that irradiates the peripheral portion of the surface with ultraviolet light and irradiates the masking film on the end surface. The coating processing method according to claim 1 or 2, wherein the first removal liquid and the second removal liquid are the same processing liquid and are supplied from a common removal section. A coating treatment apparatus for forming a metal-containing coating film on a surface of a substrate, comprising:
A substrate holder for holding the substrate;
a first coating unit that supplies a masking liquid to a surface of the substrate;
a second coating unit that supplies a metal-containing coating liquid to a surface of the substrate;
a first removal unit that supplies a first removal liquid that dissolves the metal-containing coating film formed from the metal-containing coating liquid onto a surface of the substrate;
a second removal unit that supplies a second removal liquid to the surface of the substrate, the second removal liquid dissolving a masking film formed from the masking liquid;
an irradiation unit that irradiates a surface of the substrate with ultraviolet light;
a gas supply unit that supplies an inert gas that does not generate oxygen radicals to the surface of the substrate;
A control unit,
The control unit is
(a) supplying the masking liquid to the substrate to form a masking film on a peripheral portion of a surface of the substrate;
(b) supplying the metal-containing coating liquid to the substrate to form the metal-containing coating film on the surface of the substrate;
(c) supplying the first removal liquid to the peripheral portion of the front surface of the substrate to remove the metal-containing coating film from the peripheral portion of the front surface;
(d) after the step (c), supplying the second removal liquid to the substrate and removing the masking film;
(e) a coating treatment apparatus further comprising a step of irradiating the masking film with ultraviolet light in the inert gas atmosphere after the step (b) and before the step (c). The control unit is
The coating processing apparatus according to claim 14 , further comprising: (f) performing a step of irradiating the masking film with ultraviolet light in an atmosphere capable of generating oxygen radicals after the step (c) and before the step (d). The coating treatment device according to claim 14 or 15,
a heat treatment device for heating the substrate after the step (d). a third application unit that supplies the masking liquid to a rear surface of the substrate held by the substrate holding unit;
a third removal unit that supplies the second removal liquid to a rear surface of the substrate held by the substrate holder;
The step (a) includes forming the masking film also on the peripheral portion of the rear surface of the substrate;
The step (d) also removes the masking film from the peripheral edge of the back surface;
The coating treatment apparatus according to claim 14 or 15, wherein the step (e) comprises irradiating the masking film on the peripheral edge portion of the rear surface with ultraviolet light in the inert gas atmosphere. the gas supply unit supplies the inert gas to a surface of the substrate from a position on the surface side of the substrate;
Further, the inert gas supply unit supplies the inert gas to the rear surface of the substrate from a position on the rear surface side of the substrate,
18. The coating processing apparatus according to claim 17, wherein the step (e) comprises irradiating ultraviolet light to the front surface peripheral portion while supplying the inert gas to the front surface peripheral portion from the gas supply unit located on the front surface side of the substrate, and irradiating ultraviolet light to the back surface peripheral portion while supplying the inert gas to the back surface peripheral portion from the other gas supply unit located on the back surface side of the substrate. The irradiation unit irradiates the surface of the substrate with ultraviolet light from a position on the surface side of the substrate,
Further, the apparatus includes another irradiation unit that irradiates the rear surface of the substrate with ultraviolet light from a position on the rear surface side of the substrate,
20. The coating processing apparatus according to claim 18, wherein the step (e) comprises irradiating the front surface peripheral portion with ultraviolet light from the irradiation unit located on the front surface side of the substrate, and irradiating the rear surface peripheral portion with ultraviolet light from the other irradiation unit located on the rear surface side of the substrate. The coating processing apparatus according to claim 14 or 15, wherein the first removal liquid and the second removal liquid are the same processing liquid, and the first removal unit also serves as the second removal unit.

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