JP2024034661A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

To appropriately detect the state near the top surface of a substrate support during plasma generation.SOLUTION: A substrate processing apparatus includes a chamber, a gas supply unit that supplies processing gas into the chamber, a plasma generation unit that generates plasma from the processing gas inside the chamber, a substrate supporter that supports a substrate inside the chamber, and a light emission detector that detects arcing light emission inside the chamber, and the light emission detector includes a spectrometer, the substrate support includes a light emission transmission portion that receives the arcing light emission and transmits it to the light emission detector.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Patent Document 1 discloses a technique in which a photodetector sequentially detects the emission spectrum of plasma and detects the end point of etching based on changes in the emission spectrum. A spectroscope (polychromator) provided on the side wall of the chamber is described as the light detection means, and a configuration is disclosed in which the emission spectrum of the plasma during etching is detected from the side wall of the chamber.

Japanese Patent Application Publication No. 2000-331985

The technology according to the present disclosure appropriately detects the state near the top surface of the substrate supporter during plasma generation.

One aspect of the present disclosure is a substrate processing apparatus, which includes a chamber, a gas supply unit that supplies processing gas into the chamber, and a plasma generation unit that generates plasma from the processing gas inside the chamber. a substrate supporter that supports a substrate inside the chamber; and a light emission detector that detects arcing light emission inside the chamber, the light emission detector includes a spectrometer, and the substrate supporter includes: It has a light emission transmission section that receives the arcing light emission and transmits it to the light emission detector.

According to the present disclosure, the state near the top surface of the substrate supporter can be appropriately detected during plasma generation.

FIG. 1 is an explanatory diagram showing an example of the configuration of a plasma processing system according to an embodiment. FIG. 1 is a cross-sectional view showing a configuration example of a plasma processing apparatus according to an embodiment. 1 is a partial view showing a part of a substrate processing apparatus according to an embodiment, and a cross-sectional view schematically showing a system for detecting arcing. 1 is a partial view showing a part of a substrate processing apparatus according to an embodiment, and a cross-sectional view schematically showing a system for detecting an end point.

In the manufacturing process of semiconductor devices, a chamber housing a semiconductor wafer (hereinafter referred to as a "substrate") is brought into a reduced pressure state, and various treatments are performed on the substrate to perform desired processes. Additionally, the interior of the chamber may be cleaned after the process is finished.

When carrying a substrate into or out of a chamber, lift pins are used to raise and lower the substrate, and the lift pins move up and down while in contact with the substrate, thereby moving the substrate. The substrate carried into the chamber is attracted to a substrate supporter by an electrostatic chuck (ESC). In a state of electrostatic adsorption, a potential difference is generated between the substrate and the electrostatic chuck. When plasma is generated, the space between the substrate and the lift pins may be dielectrically broken down, causing current to flow between the substrate and the pins, resulting in so-called arcing. Arcing has conventionally been detected using an electrical detector installed on a power supply path such as a substrate support. However, according to studies conducted by the present inventors, it has been found that small arcing that cannot be detected by conventional electrical detectors may occur. Therefore, a means for detecting the arcing is required.

Further, after the above process is completed, deposits may remain on the surfaces of the members of the chamber. Cleaning of the chamber is performed with the aim of removing such deposits. Dry cleaning is performed as an example of cleaning. In dry cleaning, the deposit is denatured and removed using a cleaning oxygen-containing gas or the like. At the end of dry cleaning, endpoint detection is performed to determine if depot removal is complete. In endpoint detection as an example, plasma emission of carbon monoxide gas (CO) is detected by an optical emission spectrometer (OES) provided on a side wall of a processing chamber. When the residual amount of the deposit is large, the CO plasma emission intensity is high, and when the residual amount of the deposit is small, the CO plasma emission intensity is small. In the end point detection, it is determined that the dry cleaning is completed when the CO plasma emission intensity becomes less than or equal to a desired threshold value. While such dry cleaning is being performed, substrate processing cannot be performed. Therefore, from the viewpoint of throughput, it is preferable to shorten the dry cleaning time as much as possible. To this end, it is necessary to more accurately determine the timing of completion of dry cleaning by making the end point detection more accurate.

Hereinafter, the configuration of the substrate processing apparatus according to this embodiment will be explained with reference to the drawings. Note that, in this specification, elements having substantially the same functional configuration are designated by the same reference numerals and redundant explanation will be omitted.

FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, a plasma processing system includes a plasma processing apparatus 1 and a controller 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation section 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply section 20, which will be described later, and the gas discharge port is connected to an exhaust system 40, which will be described later. The substrate support 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasmas formed in the plasma processing space include capacitively coupled plasma (CCP), inductively coupled plasma (ICP), and ECR plasma (Electron-Cyclotron-resonance plasma). , helicon wave excited plasma (HWP: Helicon Wave Plasma) or surface wave plasma (SWP) may be used. Furthermore, various types of plasma generation units may be used, including an AC (Alternating Current) plasma generation unit and a DC (Direct Current) plasma generation unit. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency within the range of 100kHz to 150MHz.

Control unit 2 processes computer-executable instructions that cause plasma processing apparatus 1 to perform various steps described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized by, for example, a computer 2a. The processing unit two a1 may be configured to read a program from the storage unit two a2 and perform various control operations by executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2, and is read out from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

A configuration example of a capacitively coupled plasma processing apparatus 1 as an example of the plasma processing apparatus 1 will be described below. FIG. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus 1. As shown in FIG.

The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply section 20, a power supply 30, and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support 11 and a gas introduction section. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10 . The gas introduction section includes a shower head 13. Substrate support 11 is placed within plasma processing chamber 10 . The shower head 13 is arranged above the substrate support 11. In one embodiment, showerhead 13 forms at least a portion of the ceiling of plasma processing chamber 10 . The plasma processing chamber 10 has a plasma processing space 10s defined by a shower head 13, a side wall 10a of the plasma processing chamber 10, and a substrate support 11. Plasma processing chamber 10 is grounded. The shower head 13 and the substrate support 11 are electrically insulated from the casing of the plasma processing chamber 10 . In one embodiment, the sidewall 10a of the plasma processing chamber 10 is provided with a sidewall window 50 and a sidewall OES 60. The side wall window 50 transmits light emitted from plasma generated in the plasma processing space 10s. Sidewall OES 60 detects plasma emissions transmitted through sidewall window 50 . Further, the side wall OES 60 transmits information on detected plasma emission to the control unit 2.

The substrate support 11 includes a main body 111 and a ring assembly 112 . The upper surface 11a of the main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. Further, the main body portion 111 has a main body lower surface 111c. The lower surface 111c of the main body is a surface that faces the surfaces forming the central region 111a and the annular region 111b. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in plan view. The substrate W is placed on the central region 111a of the main body 111, and the ring assembly 112 is placed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

Further, the main body portion 111 is formed with a plurality of through holes 120 and a plurality of light emission transmitting portions. The plurality of light emission transmission parts may be the plurality of lift pins 122. The through hole 120 is provided to penetrate from the upper surface 11a to the lower surface 111c of the main body. The lift pin 122 passes through the through hole 120 and is provided to move up and down with respect to the substrate support surface. The lift pin 122 may be moved up and down by a drive mechanism (actuator) not shown. The through hole 120 has an inner diameter larger than the outer diameter of the lift pin 122 so as not to prevent the lift pin 122 from moving up and down. Lift pin 122 is selected from a material that is transparent to light of a predetermined wavelength, including at least the wavelength of the arcing emission. In one embodiment, lift pin 122 is quartz. In another example, lift pin 122 is sapphire. The number of through holes 120 and lift pins 122 is not particularly limited, and a desired number may be provided. The lift pin 122 is optically connected to the light emission detector 130, as shown by the dashed line in FIG. Details of the light emission detector 130 and details of optical connections will be described later. Note that in this specification, "optically connected" refers to a connection that transmits light of a desired wavelength from one end to the other end.

Further, the plurality of light emission transmitting parts may be the plurality of windows 140. The window 140 as an example is a rod that is provided to penetrate from the upper surface 11a to the lower surface 111c of the main body. The material of the window 140 is selected from materials that are transparent to light of predetermined wavelengths, including at least the wavelength of the arcing emission. In one embodiment, window 140 is quartz. In another example, window 140 is sapphire. The window 140 is optically connected to a light emission detector 130, which will be described later, as shown by a dashed line in the figure. The specific configuration of the window 140 will be described later.

Further, the plurality of light emission transmitting parts may be the plurality of windows 200. The window 200 as an example is a rod that is provided to penetrate from the upper surface 11a to the lower surface 111c of the main body. The material of window 200 is selected from transparent materials that are transparent to light of predetermined wavelengths, including at least the wavelength of plasma emission. In one embodiment, window 200 is quartz. In another example, window 200 is sapphire. Quartz and sapphire are preferable because they transmit light of 482.5 nm, which can be detected as the wavelength of CO plasma emission. The window 200 is optically connected to a light emission detector 130, which will be described later, as shown by a dashed line in the figure. The specific configuration of the window 200 will be described later.

In one embodiment, body portion 111 includes a base 1110 and an electrostatic chuck 1111. Base 1110 includes a conductive member. The conductive member of the base 1110 can function as a bottom electrode. Electrostatic chuck 1111 is placed on base 1110. Electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within ceramic member 1111a. Ceramic member 1111a has a central region 111a. In one embodiment, ceramic member 1111a also has an annular region 111b. Note that another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulation member, or may be placed on both the electrostatic chuck 1111 and the annular insulation member. Also, at least one RF/DC electrode coupled to an RF power source 31 and/or a DC power source 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, at least one RF/DC electrode functions as a bottom electrode. An RF/DC electrode is also referred to as a bias electrode if a bias RF signal and/or a DC signal, as described below, is supplied to at least one RF/DC electrode. Note that the conductive member of the base 1110 and at least one RF/DC electrode may function as a plurality of lower electrodes. Further, the electrostatic electrode 1111b may function as a lower electrode. Thus, the substrate support 11 includes at least one bottom electrode.

Ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge ring is made of a conductive or insulating material, and the cover ring is made of an insulating material.

Further, the substrate support 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, a channel 1110a is formed within the base 1110 and one or more heaters are disposed within the ceramic member 1111a of the electrostatic chuck 1111. Further, the substrate support 11 may include a heat transfer gas supply unit configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

The shower head 13 is configured to introduce at least one processing gas from the gas supply section 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the shower head 13, the gas introduction section may include one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 10a.

The gas supply 20 may include at least one gas source 21 and at least one flow controller 22 . In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 to the showerhead 13 via a respective flow controller 22 . Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, gas supply 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one process gas.

Power source 30 includes an RF power source 31 coupled to plasma processing chamber 10 via at least one impedance matching circuit. RF power source 31 is configured to supply at least one RF signal (RF power) to at least one bottom electrode and/or at least one top electrode. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation section 12. Further, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated in the substrate W, and ion components in the formed plasma can be drawn into the substrate W.

In one embodiment, the RF power source 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generation section 31a is coupled to at least one lower electrode and/or at least one upper electrode via at least one impedance matching circuit, and generates a source RF signal (source RF power) for plasma generation. It is configured as follows. In one embodiment, the source RF signal has a frequency within the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are provided to at least one bottom electrode and/or at least one top electrode.

The second RF generating section 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same or different than the frequency of the source RF signal. In one embodiment, the bias RF signal has a lower frequency than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 100kHz to 60MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are provided to at least one bottom electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

Power source 30 may also include a DC power source 32 coupled to plasma processing chamber 10 . The DC power supply 32 includes a first DC generation section 32a and a second DC generation section 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to at least one bottom electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one top electrode.

In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and/or at least one upper electrode. The voltage pulse may have a pulse waveform that is rectangular, trapezoidal, triangular, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and the at least one bottom electrode. Therefore, the first DC generation section 32a and the waveform generation section constitute a voltage pulse generation section. When the second DC generation section 32b and the waveform generation section constitute a voltage pulse generation section, the voltage pulse generation section is connected to at least one upper electrode. The voltage pulse may have positive polarity or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. Note that the first and second DC generation sections 32a and 32b may be provided in addition to the RF power source 31, or the first DC generation section 32a may be provided in place of the second RF generation section 31b. good.

The exhaust system 40 may be connected to a gas outlet 10e provided at the bottom of the plasma processing chamber 10, for example. Evacuation system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

<First embodiment>
Next, details of the system S1 according to the first embodiment for detecting arcing using the lift pins 122 and windows 140 and the light emission detector 130 in the substrate supporter 11 will be described using FIG. 3. FIG. 3 is a partial view showing a part of the substrate support 11 described above, and is a cross-sectional view schematically showing the optical connection between the lift pin 122 and the window 140 and the light emission detector 130 of the system S1.

In FIG. 3, a space (hereinafter referred to as arcing space AS) in which arcing may occur may exist between the lift pin tip 122a and the substrate lower surface WB. For example, a heat transfer gas supply path 150 where a heat transfer gas such as helium is supplied from a heat transfer gas supply source (not shown), between the substrate lower surface WB or the ring assembly back surface 112a, or at the center of the main body 111. An arcing space AS may also exist near the boundary between the region 111a and the annular region 111b. Furthermore, an arcing space AS may exist in a space where potential differences may occur between multiple substrates or components of the plasma processing chamber 10.

In the substrate support 11 according to this embodiment, a window 140 is provided for each of these arcing spaces AS. The window 140 is provided near the boundary between the central region 111a and the annular region 111b of the main body portion 111 and between the heat transfer gas supply path 150 and the substrate lower surface WB or the ring assembly rear surface 112a. Specifically, one end of the window 140 provided in the vicinity of the boundary between the central region 111a and the annular region 111b of the main body portion 111 is provided so as to be exposed to the plasma processing space 10s from the vicinity of the boundary. Further, one end of the window 140 provided between the heat transfer gas supply path 150 and the substrate lower surface WB or the ring assembly back surface 112a is provided so as to be exposed to the heat transfer gas supply path 150. Thereby, the lift pin 122 or the window 140 receives and transmits light emitted by arcing in the arcing space AS.

Further, the other end of the window 140 is provided so as to be exposed on the lower surface 111c of the main body. Further, the rear end portion of the lift pin 122 is provided so as to be exposed on the lower surface 111c of the main body. An optical fiber 152 is connected to the rear end portion of the lift pin 122 and the other end of the window 140. Optical fiber 152 is connected to luminescence detector 130. In this embodiment, the optical fiber 152 realizes optical connection between the lift pin 122 and the window 140 and the light emission detector 130. As the light emission detector 130, a known detector can be used. In one example, the presence or absence of light emission can be converted into an electrical signal by an O/E converter and detected electrically.

Hereinafter, a method for detecting arcing in the system S1 according to the first embodiment will be described. When light emission associated with arcing occurs in arcing space AS, the light emission associated with arcing passes through lift pin 122 or window 140 and reaches optical fiber 152. The light emission is transmitted to the light emission detector 130 by an optical fiber 152. The light emission detector 130 transmits information indicating that the light emission has been detected to the control unit 2. The control unit 2 executes desired control in the plasma processing chamber where arcing has occurred. Specific examples of control include the following (1) or (2). (1) Output an instruction signal to stop the process after detecting arcing for a substrate W that is highly likely to have been damaged by arcing. (2) Identify the members in the plasma processing chamber 10 that are likely to have been damaged by arcing, and output a log indicating that maintenance such as member replacement should be performed.

When plasma is generated, arcing may occur in the arcing space AS. Arcing with relatively large currents can be detected by electrical detectors installed on the power supply path. On the other hand, arcing involving relatively small currents may not be detected by electrical detectors. Even such arcing may cause damage to the substrate W, and according to the present embodiment, it is possible to detect even such arcing. This makes it possible to take desired action, such as immediately stopping the process.

<Second embodiment>
Next, details of the system S2 according to the second embodiment, which detects an end point during dry cleaning execution, will be described using FIG. 4. FIG. 4 is a partial view showing a part of the substrate support 11 described above, and is a cross-sectional view schematically showing the optical connection between the lift pin 122 and the window 200 and the light emission detector 130 of the system S2.

In FIG. 4, inside the plasma processing chamber 10, deposits DP generated by plasma processing such as etching processing adhere to the surfaces of various members. As an example, a deposit DP is attached to the central region 111a of the main body portion 111 near the boundary with the annular region 111b. In the system S2, the window 200 is provided at least near the boundary between the central region 111a and the annular region 111b of the main body portion 111. In this embodiment, the window 200 is selected from a material that is transparent to the wavelength of CO plasma emission. For example, the window 200 uses a material that is transparent to light having a wavelength of 482.5 nm. As for the optical fiber 152, the same one as that explained in FIG. 3 for the system S1 according to the first embodiment can be used. Furthermore, in this embodiment, the light emission detector 130 uses a spectroscopic analyzer that can detect the wavelength of CO plasma light emission, which will be described later. For example, the spectrometer detects CO plasma emission by detecting the emission intensity of light with a wavelength of 482.5 nm. Specifically, an OES or the like can be used as the spectroscopic analyzer.

Hereinafter, a method of executing dry cleaning and detecting end points in the system S2 shown in FIG. 4 will be described. In dry cleaning, for example, an oxygen-containing gas, in one example oxygen gas, is introduced into the plasma processing space 10s, and the deposit DP is denatured by the plasma of the gas and removed from the chamber. At this time, CO plasma emission occurs near the deposit DP. Here, the CO plasma light emission near the deposit DP passes through the window 200 and reaches the optical fiber 152, and is transmitted to the light emission detector 130 by the optical fiber 152. The light emission detector 130 continuously detects the intensity of CO plasma emission, and continuously transmits information on the intensity of the plasma emission to the control unit 2. Note that "continuously" means that the above-mentioned detection and transmission are performed continuously or intermittently at predetermined intervals from the start to the end of dry cleaning. The control unit 2 executes desired control based on the CO plasma emission information received from the light emission detector 130 or the sidewall OES 60. As a specific control, the dry cleaning may be terminated when the intensity of CO plasma emission detected by the light emission detector 130 and the side wall OES 60 is lower than a desired threshold value. .

Note that during dry cleaning, a dummy wafer may be placed to protect the substrate support 11. In this case, a dummy wafer similar to the substrate W shown in FIG. 2 or 3 may be placed at the same position as the substrate W. In another example, a dummy wafer having a smaller diameter than the substrate W may be used.

In conventional endpoint detection, plasma emission is detected by the sidewall OES 60 through the sidewall window 50 provided in the sidewall 10a of the plasma processing chamber 10. However, as shown in FIG. 4, the deposit DP adhering to the central region 111a of the main body 111 near the boundary with the annular region 111b may be in the shadow of the ring assembly 112 and may exist in a blind spot from the side wall OES 60. be. In this case, CO plasma emission in the vicinity of the deposit DP is difficult to detect from the side wall OES 60. Further, the deposited DP may have a small amount of adhesion. In this case, plasma emission from the deposit DP is difficult to detect from the side wall OES 60 due to emission from other deposits attached to other locations. In order to avoid finishing dry cleaning with deposit DP remaining, provide a sufficient margin period even after the CO plasma emission intensity has decreased, and wait for the removal of deposit DP to be completed before dry cleaning. It is conceivable to terminate the In this case, the time required for dry cleaning increases by the margin period, which is disadvantageous from the viewpoint of throughput.

On the other hand, in the dry cleaning system S2, CO plasma emission is detected not only by the side wall OES 60 but also by the emission detector 130 through the window 200. As shown in FIG. 4, one end of the window 200 is provided so as to be located near the boundary between the central region 111a and the annular region 111b of the main body portion 111. Thereby, CO plasma emission in the vicinity of the deposit DP can be detected by the emission detector 130 not only through the side wall OES 60 but also through the window 200. Therefore, in the dry cleaning, by integrating the detection results by the side wall OES 60 and the detection results by the light emission detector 130, the end point can be detected more accurately. Specifically, when the intensity of CO plasma emission detected by the light emission detector 130 and the sidewall OES 60 is lower than a desired threshold value, the dry cleaning can be finished. Therefore, since the end point can be detected accurately, the dry cleaning can be completed immediately after the removal of the deposit DP is completed. That is, the time required for dry cleaning can be shortened.

The embodiments disclosed this time should be considered to be illustrative in all respects and not restrictive. The embodiments described above may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.

In the above, the system S1 for detecting arcing and the system S2 for detecting endpoints have been described separately for convenience, but these are not mutually exclusive. The substrate support 11 described for the system S1 for detecting arcing can be applied to the system S2 for detecting endpoints, and vice versa. Specifically, lift pins 122, windows 140, 200, optical fibers 152, and luminescence detectors 130 may be used in common in both arcing detection system S1 and endpoint detection system S2. More specifically, for example, the windows 140 and 200 provided near the boundary between the central region 111a and the annular region 111b of the main body 111 are configured to transmit light emitted by arcing and to transmit CO plasma light. Good too. Optical fibers 152 connected to the windows 140, 200 may also be configured to transmit arcing light emissions from the windows 140, 200 to the light emission detector 130, as well as to transmit CO plasma emissions. Further, the light emission detector 130 may be configured to detect both light emission due to arcing and CO plasma light emission, and transmit the detected information to the control unit 2. By using the plasma processing apparatus 1 having such a configuration, more accurate arcing detection and end point detection are possible.

Moreover, although the configuration using the optical fiber 152 has been described above, the means for optically connecting the lift pin 122 or the windows 140, 200 and the light emission detector 130 is not limited to this.

Furthermore, for example, the constituent features of the above embodiments can be combined arbitrarily. This arbitrary combination naturally provides the effects and effects of the respective constituent elements of the combination, as well as other effects and effects that will be apparent to those skilled in the art from the description of this specification. Further, the effects described in this specification are merely explanatory or illustrative, and are not limiting. In other words, the technology according to the present disclosure can have other effects that are obvious to those skilled in the art from the description of this specification, in addition to or in place of the above effects.

The following configurations also belong to the technical scope of the present disclosure.
(1) A substrate processing apparatus,
a chamber;
a gas supply unit that supplies processing gas into the chamber;
a plasma generation unit that generates plasma from the processing gas inside the chamber;
a substrate supporter that supports a substrate inside the chamber;
a light emission detector that detects arcing light emission inside the chamber,
In the substrate processing apparatus, the substrate support includes a light emission transmission section that receives the arcing light emission and transmits it to the light emission detector.
(2) the light emission transmission section includes a lift pin that is provided through the substrate supporter and raises and lowers the substrate with respect to the substrate supporter;
The substrate processing apparatus according to (1) above, wherein the light emission detector is provided on the lower surface side of the substrate support.
(3) The light emission transmission section is provided at least below a through hole formed in the substrate support and includes a window that transmits the arcing light emission, and the light emission detector is arranged on the bottom side of the substrate support. The substrate processing apparatus according to (1) or (2) above.
(4) the substrate support has a central region that supports the substrate and an annular region that supports a ring assembly;
The substrate processing apparatus according to (3) above, wherein a portion of the window on the upper surface side of the substrate support is provided at a boundary between the central region and the annular region.
(5) The arcing light emission is arcing that occurs in a space between the lower surface of the substrate or the lower surface of the ring assembly and the light emission transmission section, or in a space between the lower surface of the substrate or the lower surface of the ring assembly and the heat transfer gas supply path. The substrate processing apparatus according to any one of (1) to (4) above, which emits light.
(6) A substrate processing apparatus,
a chamber;
a gas supply unit that supplies processing gas into the chamber;
a plasma generation unit that generates plasma from the processing gas inside the chamber;
a substrate supporter that supports a substrate inside the chamber;
a light emission detector that detects plasma light emission inside the chamber,
In the substrate processing apparatus, the substrate support includes a light emission transmission section that receives the plasma light emission and transmits it to the light emission detector.
(7) The light emission transmission section includes a lift pin that is provided through the substrate supporter and raises and lowers the substrate with respect to the substrate supporter,
The substrate processing apparatus according to (6) above, wherein the light emission detector is provided on the lower surface side of the substrate supporter.
(8)
The light emission transmitting section is provided at least below a through hole formed in the substrate support and includes a window that transmits the plasma light emission, and the light emission detector is provided on the bottom side of the substrate support. The substrate processing apparatus according to (6) or (7) above.
(9) the substrate support has a central region that supports the substrate and an annular region that supports a ring assembly;
The substrate processing apparatus according to (8), wherein a portion of the window on the upper surface side of the substrate supporter is provided at a boundary between the central region and the annular region.
(10) The substrate processing apparatus according to any one of (6) to (9) above, wherein the plasma emission is plasma emission generated near a deposit during plasma processing.
(11) A substrate processing method for processing a substrate using a substrate processing apparatus,
The substrate processing apparatus includes:
a chamber;
a gas supply unit that supplies processing gas into the chamber;
a plasma generation unit that generates plasma from the processing gas inside the chamber;
a substrate supporter equipped with a light emission transmitting part that supports the substrate inside the chamber;
a light emission detector that detects arcing light emission inside the chamber;
has
The substrate support has a light transmission part, and the light transmission part includes a lift pin or a window.
receiving arcing light emission in the light emission transmission section and transmitting it to the light emission detector;
A substrate processing method, comprising a step of detecting the arcing light emission in the light emission detector.
(12) The arcing light emission is arcing that occurs in a space between the lower surface of the substrate or the lower surface of the ring assembly and the light emission transmission section, or in a space between the lower surface of the substrate or the lower surface of the ring assembly and the heat transfer gas supply path. It is the luminescence of
The substrate processing method according to (11) above, including the step of stopping the processing of the substrate when the light emission detector detects the arcing light emission while processing the substrate.
(13) A substrate processing method for processing a substrate using a substrate processing apparatus, the method comprising:
The substrate processing apparatus includes:
a chamber;
a gas supply unit that supplies processing gas into the chamber;
a plasma generation unit that generates plasma from the processing gas inside the chamber;
a substrate supporter equipped with a light emission transmitting part that supports the substrate inside the chamber;
a light emission detector that detects plasma light emission inside the chamber;
has
The substrate support has a light transmission part, the light transmission part includes a lift pin or a window,
receiving plasma light emission in the light emission transmission section and transmitting it to the light emission detector;
A substrate processing method comprising the step of detecting the plasma light emission in the light emission detector.
(14)
The plasma light emission is plasma light emission generated near deposits attached to members inside the chamber during plasma processing,
The light emission detector continuously detects the plasma light emission during dry cleaning of the substrate processing apparatus,
The substrate processing method according to (13) above, including the step of terminating the dry cleaning when the detected luminescence intensity of the plasma emission becomes equal to or less than a threshold value.

1 Plasma processing apparatus 10 Plasma processing chamber 11 Substrate supporter 12 Plasma generation section 20 Gas supply section 130 Luminescence detector W Substrate

Claims (14)

A substrate processing device,
a chamber;
a gas supply unit that supplies processing gas into the chamber;
a plasma generation unit that generates plasma from the processing gas inside the chamber;
a substrate supporter that supports a substrate inside the chamber;
a light emission detector that detects arcing light emission inside the chamber,
In the substrate processing apparatus, the substrate support includes a light emission transmission section that receives the arcing light emission and transmits it to the light emission detector. The light emission transmitting unit includes a lift pin that is provided through the substrate supporter and raises and lowers the substrate with respect to the substrate supporter,
The substrate processing apparatus according to claim 1, wherein the light emission detector is provided on a lower surface side of the substrate supporter. The light emission transmitter is provided at least below a through hole formed in the substrate support and includes a window that transmits the arcing light, and the light emission detector is provided on the bottom side of the substrate support. The substrate processing apparatus according to claim 1. The substrate support has a central region that supports the substrate and an annular region that supports a ring assembly;
4. The substrate processing apparatus according to claim 3, wherein a portion of the window on the upper surface side of the substrate support is provided at a boundary between the central region and the annular region. The arcing light emission is arcing light emission that occurs in a space between the lower surface of the substrate or the lower surface of the ring assembly and the light emission transmission section, or in a space between the lower surface of the substrate or the lower surface of the ring assembly and the heat transfer gas supply path. The substrate processing apparatus according to any one of claims 1 to 4. A substrate processing device,
a chamber;
a gas supply unit that supplies processing gas into the chamber;
a plasma generation unit that generates plasma from the processing gas inside the chamber;
a substrate supporter that supports a substrate inside the chamber;
a light emission detector that detects plasma light emission inside the chamber,
the luminescence detector includes a spectrometer;
In the substrate processing apparatus, the substrate support includes a light emission transmission section that receives the plasma light emission and transmits it to the light emission detector. The light emission transmitting unit includes a lift pin that is provided through the substrate supporter and raises and lowers the substrate with respect to the substrate supporter,
7. The substrate processing apparatus according to claim 6, wherein the light emission detector is provided on a lower surface side of the substrate supporter. The light emission transmitting section is provided at least below a through hole formed in the substrate support and includes a window that transmits the plasma light emission, and the light emission detector is provided on the bottom side of the substrate support. 7. The substrate processing apparatus according to claim 6. The substrate support has a central region that supports the substrate and an annular region that supports a ring assembly;
9. The substrate processing apparatus according to claim 8, wherein a portion of the window on the upper surface side of the substrate support is provided at a boundary between the central region and the annular region. 10. The substrate processing apparatus according to claim 6, wherein the plasma emission is plasma emission generated near a deposit during plasma processing. A substrate processing method for processing a substrate using a substrate processing apparatus, the method comprising:
The substrate processing apparatus includes:
a chamber;
a gas supply unit that supplies processing gas into the chamber;
a plasma generation unit that generates plasma from the processing gas inside the chamber;
a substrate supporter that supports a substrate inside the chamber;
a light emission detector that detects arcing light emission inside the chamber;
has
The substrate support has a light emission transmission part, the light emission transmission part includes a lift pin or a window,
receiving arcing light emission in the light emission transmission section and transmitting it to the light emission detector;
A substrate processing method, comprising a step of detecting the arcing light emission in the light emission detector. The arcing light emission is arcing light emission that occurs in a space between the lower surface of the substrate or the lower surface of the ring assembly and the light emission transmission section, or in a space between the lower surface of the substrate or the lower surface of the ring assembly and the heat transfer gas supply path. can be,
12. The substrate processing method according to claim 11, further comprising the step of stopping processing of the substrate when the arcing light emission is detected during execution of processing of the substrate in the light emission detector. A substrate processing method for processing a substrate using a substrate processing apparatus, the method comprising:
The substrate processing apparatus includes:
a chamber;
a gas supply unit that supplies processing gas into the chamber;
a plasma generation unit that generates plasma from the processing gas inside the chamber;
a substrate supporter that supports a substrate inside the chamber;
a light emission detector that detects plasma light emission inside the chamber;
has
the luminescence detector includes a spectrometer;
The substrate support has a light emission transmission part, the light emission transmission part includes a lift pin or a window,
receiving plasma light emission in the light emission transmission section and transmitting it to the light emission detector;
A substrate processing method comprising the step of detecting the plasma light emission in the light emission detector. The plasma light emission is plasma light emission generated near deposits attached to members inside the chamber during plasma processing,
The light emission detector continuously detects the plasma light emission during dry cleaning of the substrate processing apparatus,
14. The substrate processing method according to claim 13, further comprising the step of terminating the dry cleaning when the detected light emission intensity of the plasma light emission becomes equal to or less than a threshold value.

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