JP2023091272A - Semiconductor module and method for manufacturing the same - Google Patents

Abstract

A semiconductor module capable of suppressing delamination and a method for manufacturing the same are provided.
A conductor plate (7) is provided on the lower surface of a laminated substrate (1). A semiconductor chip 8 is bonded onto a conductive plate 7 in a through hole 6 of the laminated substrate 1 with a die bonding resin 9 . A mold resin 11 seals the semiconductor chip 8 . The laminated substrate 1 has prepreg materials 2 and base materials 3 that are alternately laminated, and a projecting portion 12 in which a part of the prepreg material 2 projects into the through hole 6 . The outer peripheral portion of the die bond resin 9 is adhered to the upper surface of the projecting portion 12 of the prepreg material 2 .
[Selection drawing] Fig. 1

Description

The present disclosure relates to a semiconductor module and manufacturing method thereof.

A semiconductor module has been disclosed in which a semiconductor chip is bonded onto a conductor plate in a through hole of a laminated substrate (see, for example, Patent Document 1).

JP-A-11-040688

In assembling a semiconductor module, a semiconductor chip is fixed with a die-bonding resin and then sealed with a mold resin. However, die-bonding resin and molding resin have weak adhesion to Au plating on the outermost surface of the conductor plate. Therefore, when thermal stress is applied to the laminated substrate in a reliability test or the like, the peripheral portion of the die-bonding resin begins to peel off from the conductor plate. Also, peeling of the mold resin occurs at the corner where the side wall of the through hole and the conductor plate intersect. Since the mold resin and the semiconductor chip are adhered to each other, peeling occurs at the interface between the conductor plate and the semiconductor chip, where the adhesive force is weak. There is a problem that the semiconductor chip floats from the conductor plate, resulting in poor thermal conductivity and failing to satisfy the product quality.

The present disclosure has been made to solve the problems described above, and an object thereof is to obtain a semiconductor module capable of suppressing delamination and a method of manufacturing the same.

A semiconductor module according to the present disclosure includes a laminated substrate having a through hole, a conductor plate provided on the lower surface of the laminated substrate, and a semiconductor chip bonded to the conductor plate in the through hole with a die bonding resin. and a mold resin for sealing the semiconductor chip, the laminated substrate has a protruding portion in which a part of the prepreg material protrudes into the through hole, and the outer peripheral portion of the die bonding resin is the prepreg material. It is characterized in that it is adhered to the upper surface of the protrusion.

In the present disclosure, the laminated substrate has a protruding portion in which a portion of the prepreg material protrudes into the through hole. The outer peripheral portion of the die-bonding resin is adhered to the upper surface of the projecting portion of the prepreg material. Since the adhesive force between the die-bonding resin and the prepreg material is strong, peeling of the die-bonding resin can be suppressed.

1 is a cross-sectional view showing a semiconductor module according to Embodiment 1; FIG. FIG. 8 is a cross-sectional view showing a semiconductor module according to Embodiment 2; FIG. 11 is a cross-sectional view showing a method of manufacturing a semiconductor module according to Embodiment 3; FIG. 11 is a cross-sectional view showing a method of manufacturing a semiconductor module according to Embodiment 3;

A semiconductor module and a method of manufacturing the same according to embodiments will be described with reference to the drawings. The same reference numerals are given to the same or corresponding components, and repetition of description may be omitted.

Embodiment 1.
FIG. 1 is a cross-sectional view showing a semiconductor module according to Embodiment 1. FIG. A laminated substrate 1 is a glass epoxy substrate in which prepreg materials 2 and base materials 3 are alternately laminated. The prepreg material 2 is a material in which a layer of carbon fiber or glass fiber is impregnated with a resin such as an epoxy resin. The substrate 3 is, for example, glass cloth. Wiring 4 is provided on the inner layer and upper surface of the laminated substrate 1 . A solder resist 5 is provided on the upper surface of the laminated substrate 1 .

A through-hole 6 penetrates from the upper surface to the lower surface of the laminated substrate 1 . A conductor plate 7 is provided on the lower surface of the laminated substrate 1 and covers the lower portion of the through hole 6 . The conductor plate 7 has a laminated structure of Ni/Pd/Au. A space surrounded by the side wall of the through hole 6 and the conductor plate 7 constitutes a cavity.

A semiconductor chip 8 is bonded onto the conductor plate 7 in the through hole 6 with a die bonding resin 9 . The die bond resin 9 is, for example, sintered Ag paste or Ag paste. The upper surface electrodes of the semiconductor chip 8 and the wirings 4 of the laminated substrate 1 are connected by wires 10 such as gold wires. Mold resin 11 fills through hole 6 and seals semiconductor chip 8 and wire 10 . Mold resin 11 is, for example, epoxy resin.

In the present embodiment, laminated substrate 1 has protruding portion 12 in which part of prepreg material 2 protrudes into through hole 6 . The outer peripheral portion of the die bond resin 9 is adhered to the upper surface of the projecting portion 12 of the prepreg material 2 . Since the adhesive force between the die bonding resin 9 and the prepreg material 2 is strong, peeling of the die bonding resin 9 can be suppressed. In addition, since the entire rear surface of the semiconductor chip 8 is adhered to the conductor plate 7, good thermal conductivity can be ensured. In addition, since the range of resin selection is widened, it is effective for reducing resin costs and short-term product launch.

Also, the protruding portion 12 of the prepreg material 2 is router-processed to become thinner toward the center of the through-hole 6, and the upper surface thereof is tapered. As a result, the die-bonding resin 9 easily wets and spreads over the upper surface of the projecting portion 12 of the prepreg material 2 . Note that the protruding portion 12 of the prepreg material 2 may be rectangular.

Embodiment 2.
FIG. 2 is a cross-sectional view showing a semiconductor module according to Embodiment 2. FIG. The through hole 6 has a shape without corners from the side surface of the through hole 6 to the upper surface of the projecting portion 12 . For example, after the lamination press process of the laminated substrate 1, a bowl-shaped through hole 6 is formed using a drill cutter with a rounded tip.

Conventionally, when thermal stress is applied to the laminated substrate 1, the mold resin 11 begins to peel off from the corner where the through hole 6 and the conductor plate 7 intersect. In contrast, in the present embodiment, the through hole 6 does not have a corner where thermal stress concentrates. Then, the bonding area between the prepreg material 2 and the base material 3 of the laminated substrate 1 and the mold resin 11 increases. Therefore, the mold resin 11 becomes difficult to peel off. Other configurations and effects are the same as those of the first embodiment.

Embodiment 3.
3 and 4 are cross-sectional views showing the method of manufacturing a semiconductor module according to the third embodiment. First, as shown in FIG. 3, through holes 6 are formed in the laminated substrate 1 . A tape material 13 is attached to the lower surface of the laminated substrate 1 to cover the through hole 6 below. The adhesive force of the tape material 13 is used to attach the lower electrode 14 of the semiconductor chip 8 to the tape material 13 in the through hole 6 . A wire 10 connects the upper electrode of the semiconductor chip 8 and the wiring 4 of the laminated substrate 1 . A semiconductor chip 8 and wires 10 are sealed with a mold resin 11 . The prepreg material 2 exposed in the through holes 6 of the laminated substrate 1 serves as a bonding surface with the molding resin 11 . After sealing with the mold resin 11, as shown in FIG.

Since the die-bonding resin having poor adhesiveness to the Au plating is not used, the problem of peeling of the die-bonding resin does not occur. Moreover, since there is no conductor plate 7, the mold resin 11 does not separate from the conductor plate 7 either. In addition, since the lower surface electrodes 14 of the semiconductor chip 8 are exposed, solder can be applied directly to the lower surface electrodes 14 when mounting the module. Therefore, a state of good thermal conductivity can be ensured. Other configurations and effects are the same as those of the first or second embodiment.

The semiconductor chip 8 is not limited to being made of silicon, and may be made of a wide bandgap semiconductor having a larger bandgap than silicon. Wide bandgap semiconductors are, for example, silicon carbide, gallium nitride-based materials, or diamond. A semiconductor chip formed of such a wide bandgap semiconductor can be miniaturized because of its high withstand voltage and allowable current density. By using this miniaturized semiconductor chip, a semiconductor device incorporating this semiconductor chip can also be miniaturized and highly integrated. Moreover, since the heat resistance of the semiconductor chip is high, the radiation fins of the heat sink can be made smaller, and the water-cooled portion can be air-cooled, so that the semiconductor device can be further made smaller. Moreover, since the power loss of the semiconductor chip is low and the efficiency is high, the efficiency of the semiconductor device can be improved.

REFERENCE SIGNS LIST 1 laminated substrate 2 prepreg material 3 base material 6 through hole 7 conductor plate 8 semiconductor chip 9 die bond resin 11 mold resin 12 protrusion 13 tape material 14 lower surface electrode

Claims (6)

a laminated substrate having through holes;
a conductor plate provided on the lower surface of the laminated substrate;
a semiconductor chip bonded to the conductor plate in the through hole with a die-bonding resin;
A mold resin that seals the semiconductor chip,
The laminated substrate has a prepreg material and a base material that are alternately laminated, and a protruding portion in which a part of the prepreg material protrudes into the through hole,
A semiconductor module, wherein an outer peripheral portion of the die-bonding resin is adhered to an upper surface of the projecting portion of the prepreg material. The prepreg material is a material in which a layer of carbon fiber or glass fiber is impregnated with a resin,
2. The semiconductor module according to claim 1, wherein said die bond resin is, for example, sintered Ag paste or Ag paste. 3. The semiconductor module according to claim 1, wherein the upper surface of said projecting portion of said prepreg material is tapered. 4. The semiconductor module according to claim 3, wherein the through hole has a shape without corners from the side surface of the through hole to the upper surface of the projecting portion. 5. The semiconductor module according to claim 1, wherein said semiconductor chip is made of a wide bandgap semiconductor. forming a through-hole in the laminated substrate;
A step of attaching a tape material to the lower surface of the laminated substrate to cover the lower part of the through hole;
affixing a lower surface electrode of a semiconductor chip to the tape member in the through hole;
a step of sealing the semiconductor chip with a mold resin;
and exposing the bottom electrode by peeling off the tape material after sealing with the mold resin.

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