JP2022056377A - Film forming equipment and film forming method - Google Patents

Abstract

To provide a film deposition apparatus capable of depositing a GaN film at a high productivity, and a film deposition method.SOLUTION: A film deposition apparatus 1 according to an embodiment has a chamber 20 of which internal space can be evacuated, a turntable 31 that is arranged in the chamber 20, holds a work 10, and circularly transports the work 10 in a periphery trajectory, a target 42 composed of a film deposition material containing GaN, and a plasma generator for generating a plasma with a sputtering gas that is introduced between the target and the turntable. The film deposition apparatus has a GaN deposition treatment part 40A that deposits a particle of a film deposition material containing GaN and Ga on the work 10 circularly transported by the turntable 31 by sputtering, and a nitriding treatment part 50 that nitrides the particle of the film deposition material deposited in the GaN deposition treatment part 40A on the work 10 circularly transported by the turntable 31.SELECTED DRAWING: Figure 1

Description

The present invention relates to a film forming apparatus and a film forming method.

GaN (Gallium Nitride) is attracting attention as a next-generation device material. For example, devices using GaN include light emitting devices, power devices, high frequency communication devices, and the like. Such a GaN device is manufactured by forming a GaN film on a silicon (Si) wafer, a silicon carbide (SiC) wafer, a sapphire substrate, or a glass substrate. Conventionally, GaN film formation has been performed by the MO-CVD (metal organic chemical vapor deposition) method. The MO-CVD method is a film formation method in which a material gas containing an organic metal is carried on a heated substrate by a carrier gas, and the film is deposited by chemical vapor deposition in which the material is decomposed and chemically reacted at a high temperature. Is.

JP-A-2015-103652

However, the film formation of GaN by the MO-CVD method has a problem in productivity as follows. First, gallium (Ga) is a liquid at normal temperature and pressure, but in order to suppress the evaporation of Ga and to react Ga with nitrogen (N), a large amount of _NH3 gas used for the treatment is required. Therefore, the efficiency of using the material is poor. Further, it is difficult to handle the material gas and it is difficult to maintain the state of the device stably, so that the yield is poor. Since the MO-CVD method completely decomposes NH ₃ gas, high temperature treatment at a level of 1000 ° C. is required, a high output heating device is required, and the cost is high. Further, since hydrogen (H) contained in the processing gas during the treatment is taken into the formed GaN film, an extra step of dehydrogenation treatment is required.

The present invention has been proposed to solve the above-mentioned problems, and an object of the present invention is to provide a film forming apparatus and a film forming method capable of forming a GaN film with high productivity.

In order to achieve the above object, the film forming apparatus of the present embodiment has a chamber in which the inside can be made into a vacuum, a work is provided in the chamber, and the work is held in a circular locus. It has a rotary table for circulating transportation, a target made of a film-forming material containing GaN, and a plasma generator that turns the sputter gas introduced between the target and the rotary table into plasma, and is circulated by the rotary table. The GaN film forming processing section for depositing particles of a film forming material containing GaN on the transported work, and the GaN film forming section deposited on the work circulated and transported by the rotary table. It has a nitrided portion that nitrides the particles of the film-forming material.

The film forming method of the present embodiment is a film forming method of forming a film on the work while holding the work by a rotary table and circulating and transporting the work along a circumferential locus in a chamber where the inside can be made a vacuum. A GaN film forming processing unit having a target made of a film forming material containing GaN and a plasma generator for converting sputter gas introduced between the target and the rotary table into plasma is provided by the rotary table. A GaN film forming process for depositing particles of a film forming material containing GaN on the work to be circulated and transported, and a GaN film forming section on the work to be circulated and transported by the rotary table. Includes a nitriding process that nitrides the particles of the film-forming material deposited in.

According to the embodiment of the present invention, it is possible to provide a film forming apparatus and a film forming method capable of forming a GaN film with high productivity.

It is a perspective plan view schematically showing the structure of the film forming apparatus which concerns on embodiment. FIG. 1 is a cross-sectional view taken along the line AA in FIG. 1 and is a detailed view of the internal configuration seen from the side surface of the film forming apparatus according to the embodiment of FIG. It is a flowchart of the process by the film forming apparatus which concerns on embodiment. It is a perspective plan view schematically showing the modification of the embodiment. It is a perspective plan view schematically showing the modification of the embodiment. It is sectional drawing (A) which shows an example of the layer structure of LED, and is the enlarged sectional view (B) of a buffer layer.

An embodiment of the film forming apparatus will be described in detail with reference to the drawings.
[overview]
The film forming apparatus 1 shown in FIG. 1 is an apparatus for forming a GaN (Gallium Nitride) film and an AlN (Aluminum Nitride) film on the work 10 to be formed by sputtering. The work 10 is, for example, a silicon (Si) wafer, a silicon carbide (SiC) wafer, a sapphire substrate, or a glass substrate.

The film forming apparatus 1 includes a chamber 20, a transporting unit 30, a film forming processing unit 40, a nitriding processing unit 50, a heating unit 60, a transfer chamber 70, a preheating chamber 80, a cooling chamber 90, and a control device 100. The chamber 20 is a container whose inside can be evacuated. The chamber 20 has a cylindrical shape, and the inside thereof is divided into a plurality of sections. The film forming processing section 40 is partitioned by a partitioning section 22 and is arranged in two fan-shaped sections. The nitriding treatment section 50 and the heating section 60 are arranged in a section other than the section in which the film formation processing section 40 is arranged.

In the film forming processing section 40, one section uses a material containing GaN as a target 42, a GaN film forming section 40A for forming a GaN film, and the other section uses a material containing Al as a target 42. The Al film forming processing unit 40B for forming an Al film. By orbiting the inside of the chamber 20 many times along the circumferential direction, the work 10 alternately circulates through the GaN film forming processing section 40A and the nitriding processing section 50, and passes through the GaN film on the work 10. And nitriding of Ga are alternately repeated to grow a GaN film having a desired thickness.

Further, the work 10 orbits in the chamber 20 many times along the circumferential direction, so that the work 10 alternately circulates through the Al film forming processing unit 40B and the nitriding processing unit 50, and passes on the work 10. The formation of the Al film and the nitriding of Al are alternately repeated to grow an AlN film having a desired thickness. In this way, the film formation of the GaN film and the film formation of the AlN film are repeated, and the GaN film and the AlN film are alternately laminated.

The reason why the nitriding processing unit 50 is further provided while using the material containing GaN as the target 42 is as follows. That is, since Ga has a low melting point and is in a liquid state at normal temperature and pressure, it is necessary to contain nitrogen (N) in order to make it a solid target 42. Therefore, it is conceivable to simply increase the nitrogen content of the target 42 and form a film only by sputtering the target 42.

Here, in order to improve the film formation rate, DC discharge sputtering is preferable to RF discharge. However, if the target 42 contains a large amount of nitrogen, the surface becomes an insulator. In the target 42 whose surface is an insulator in this way, DC discharge may not occur in some cases.

That is, there is a limit to the amount of nitrogen that can be contained in the target 42 of GaN, and the nitriding of Ga in the target 42 remains insufficient. That is, the target 42 containing GaN contains a Ga atom lacking a bond with an N (nitrogen) atom.

Further, when nitrogen gas is added to the sputtering gas introduced into the film forming processing unit 40 and sputtering is performed, the surface of the target 42 is nitrided and the surface becomes an insulator. Therefore, in order to supplement the insufficient nitrogen, the GaN film forming processing unit 40A cannot add nitrogen gas to the sputtering gas. On the other hand, if the nitrogen content of the formed GaN film is low and there is a nitrogen defect, the crystallinity of the film deteriorates and the flatness is impaired. Therefore, in order to make up for the lack of nitrogen in the GaN film formed by the GaN film forming process section 40A, nitriding is further performed by the nitriding process section 50 after the film formation by the GaN film forming process section 40A.

[Chamber]
As shown in FIG. 2, the chamber 20 is formed by being surrounded by a disk-shaped ceiling 20a, a disk-shaped inner bottom surface 20b, and an annular inner peripheral surface 20c. The partition portion 22 is a square wall plate radially arranged from the center of the cylindrical shape, extends from the ceiling 20a toward the inner bottom surface 20b, and does not reach the inner bottom surface 20b. That is, a columnar space is secured on the inner bottom surface 20b side.

A rotary table 31 for transporting the work 10 is arranged in this columnar space. The lower end of the partition portion 22 faces the mounting surface of the work 10 on the rotary table 31 with a gap through which the work 10 mounted on the rotary table 31 passes. The partitioning portion 22 partitions the processing space 41 in which the work 10 is processed by the film forming processing section 40. Further, the processing space 59 is partitioned by the cylindrical body 51 described later of the nitriding processing unit 50. That is, the film forming processing unit 40 and the nitriding processing unit 50 are smaller than the chamber 20, respectively, and have processing spaces 41 and 59 separated from each other. The partitioning portion 22 can prevent the sputter gas G1 of the film forming processing portion 40 from diffusing into the chamber 20. Further, the tubular body 51 of the nitriding treatment unit 50 can prevent the process gas G2 from diffusing into the chamber 20.

Further, as will be described later, in the film forming processing unit 40 and the nitriding processing unit 50, plasma is generated in the processing spaces 41 and 59, but the pressure in the processing spaces 41 and 59 partitioned into a space smaller than the chamber 20 is applied. Since it may be adjusted, the pressure can be easily adjusted and the plasma discharge can be stabilized. Therefore, if the above-mentioned effect can be obtained, at least two dividing portions 22 sandwiching the film forming processing portion 40 may be sufficient in a plan view.

The chamber 20 is provided with an exhaust port 21. An exhaust unit 23 is connected to the exhaust port 21. The exhaust unit 23 includes piping, a pump, a valve and the like (not shown). The inside of the chamber 20 can be depressurized to create a vacuum by exhausting from the exhaust unit 23 through the exhaust port 21. The exhaust unit 23 exhausts air until, for example, the degree of vacuum reaches 10 ^-4 Pa in order to keep the oxygen concentration low.

[Transport section]
The transport unit 30 has a rotary table 31, a motor 32, and a holding unit 33, and circulates and transports the work 10 along a transport path L which is a circumferential locus. The rotary table 31 has a disk shape and is greatly expanded to the extent that it does not come into contact with the inner peripheral surface 20c. The motor 32 continuously rotates at a predetermined rotation speed about the center of the circle of the rotary table 31 as a rotation axis. The rotary table 31 rotates at a speed of, for example, 1 to 150 rpm.

The holding portion 33 is a groove, a hole, a protrusion, a jig, a holder, or the like arranged on the upper surface of the rotary table 31 at a uniform circumferential position, and holds the tray 34 on which the work 10 is placed by a mechanical chuck or an adhesive chuck. do. The works 10 are arranged in a matrix on the tray 34, for example, and six holding portions 33 are arranged on the rotary table 31 at intervals of 60 °. That is, since the film forming apparatus 1 can collectively form a film on a plurality of works 10 held by the plurality of holding portions 33, the productivity is very high. The tray 34 may be omitted and the work 10 may be placed directly on the upper surface of the rotary table 31.

[Film film processing unit]
The film forming processing unit 40 generates plasma and exposes the target 42 made of the film forming material to the plasma. As a result, the ions contained in the plasma collide with the target 42 to deposit the particles of the film-forming material (hereinafter referred to as sputtered particles) that have been knocked out to form a film. As shown in FIG. 2, the film forming processing unit 40 includes a sputter source composed of a target 42, a backing plate 43 and an electrode 44, and a plasma generator composed of a power supply unit 46 and a sputter gas introduction unit 49. ..

The target 42 is a plate-shaped member made of a film-forming material deposited on the work 10 to form a film. The film forming material constituting the target 42 in the GaN film forming processing unit 40A of the present embodiment is a material containing Ga and GaN, and the target 42 is a source of spatter particles containing Ga atoms to be deposited on the work 10. Due to the limited nitrogen content as described above, the target 42 contains a nitrogen-deficient incomplete GaN, i.e., a Ga atom lacking a bond with N (nitrogen). ..

Further, the film forming material constituting the target 42 in the Al film forming processing unit 40B is a material containing Al, and the target 42 is a supply source of sputter particles containing Al atoms to be deposited on the work 10. As long as it is a target 42 for sputtering that can supply sputtered particles containing Ga atoms and sputtered particles containing Al atoms, it is permissible to contain other than Ga, Al, and N (nitrogen).

The target 42 is provided apart from the transport path L of the work 10 placed on the rotary table 31. The surface of the target 42 is held on the ceiling 20a of the chamber 20 so as to face the work 10 placed on the rotary table 31. For example, three targets 42 are installed. The three targets 42 are provided at positions arranged on the vertices of the triangle in a plan view.

The backing plate 43 is a support member that holds the target 42. The backing plate 43 holds each target 42 individually. The electrode 44 is a conductive member for individually applying electric power to each target 42 from the outside of the chamber 20, and is electrically connected to the target 42. The electric power applied to each target 42 can be changed individually. In addition, the spatter source is appropriately provided with a magnet, a cooling mechanism, and the like, if necessary.

The power supply unit 46 is, for example, a DC power supply that applies a high voltage, and is electrically connected to the electrode 44. The power supply unit 46 applies electric power to the target 42 through the electrode 44. The rotary table 31 has the same potential as the grounded chamber 20, and a potential difference is generated by applying a high voltage to the target 42 side.

As shown in FIG. 2, the sputter gas introduction unit 49 introduces the sputter gas G1 into the chamber 20. The sputter gas introduction unit 49 has a supply source of spatter gas G1 such as a cylinder (not shown), a pipe 48, and a gas introduction port 47. The pipe 48 is connected to the supply source of the sputter gas G1 and airtightly penetrates the chamber 20 to extend into the inside of the chamber 20, and its end is opened as a gas introduction port 47. The sputter gas introduction unit 49 of the present embodiment introduces the sputter gas G1 into the processing space 41 so that the processing space 41 is 0.3 Pa or less and 0.1 Pa or more.

The gas introduction port 47 opens between the rotary table 31 and the target 42, and introduces the spatter gas G1 for film formation into the processing space 41 formed between the rotary table 31 and the target 42. A rare gas can be adopted as the sputter gas G1, and an argon (Ar) gas or the like is suitable. The sputter gas G1 is a gas that does not contain nitrogen (N), and can be an argon (Ar) single gas.

In such a film forming processing unit 40, when the sputtering gas G1 is introduced from the sputtering gas introducing unit 49 and the power supply unit 46 applies a high voltage to the target 42 through the electrode 44, it is formed between the rotary table 31 and the target 42. The sputter gas G1 introduced into the processing space 41 is turned into plasma, and active species such as ions are generated. The ions in the plasma collide with the target 42 and knock out the sputtered particles. In the GaN film forming processing unit 40A, the sputtered particles containing Ga atoms are ejected by colliding with the target 42 made of a material containing Ga and GaN. In the Al film forming processing unit 40B, the sputtered particles containing Al atoms are knocked out by colliding with the target 42 made of a material containing Al.

Further, the work 10 circulated and conveyed by the rotary table 31 passes through the processing space 41. The spatter particles that have been knocked out are deposited on the work 10 when the work 10 passes through the processing space 41, and a film containing a Ga atom or a film containing an Al atom is formed on the work 10. The work 10 is circulated and conveyed by the rotary table 31, and the film forming process is performed by repeatedly passing through the processing space 41. The formation of the GaN film containing Ga and the formation of the AlN film containing Al are not performed in parallel, but are performed by forming one film and then forming the other film.

[Nitriding processing unit]
The nitriding treatment unit 50 generates inductively coupled plasma in the treatment space 59 into which the process gas G2 containing nitrogen gas is introduced. That is, the nitriding unit 50 turns nitrogen gas into plasma to generate chemical species. The nitrogen atoms contained in the generated chemical species collide with the film containing Ga atoms and the film containing Al atoms formed on the work 10 by the film forming processing unit 40, and collide with the nitrogen in the film containing Ga atoms. It bonds with the Ga atom and the Al atom in the film containing the Al atom, which lacks the bond. This makes it possible to obtain a GaN film or an AlN film without nitrogen defects.

As shown in FIG. 2, the nitriding unit 50 has a plasma generator composed of a cylindrical body 51, a window member 52, an antenna 53, an RF power supply 54, a matching box 55, and a process gas introduction unit 58.

The tubular body 51 is a member that covers the periphery of the processing space 59. As shown in FIGS. 1 and 2, the tubular body 51 is a cylinder having a rectangular shape with rounded horizontal cross sections and has an opening. The tubular body 51 is fitted into the ceiling 20a of the chamber 20 so that its opening is separated from the rotary table 31 side, and protrudes into the internal space of the chamber 20. The tubular body 51 is made of the same material as the rotary table 31.

The window member 52 is a flat plate of a dielectric material such as quartz having a shape substantially similar to the horizontal cross section of the tubular body 51. The window member 52 is provided so as to close the opening of the tubular body 51, and partitions the inside of the tubular body 51 from the processing space 59 in which the process gas G2 containing nitrogen gas is introduced in the chamber 20. The window member 52 needs to suppress oxidation due to the inflow of oxygen into the processing space 59. For example, the required oxygen concentration is as low as 10 ¹⁹ (atom / cm ³ ) or less. To deal with this, the surface of the window member 52 is coated with a protective coating. For example, by coating the surface of the window member 52 with Y ₂ O ₃ (yttrium oxide), the oxygen concentration is suppressed by suppressing the oxygen release from the surface of the window member 52 while suppressing the consumption of the window member 52 due to plasma. Can be kept low.

The processing space 59 is formed between the rotary table 31 and the inside of the tubular body 51 in the nitriding processing unit 50. The nitriding process is performed by repeatedly passing the work 10 circulated and conveyed by the rotary table 31 through the processing space 59. The window member 52 may be a dielectric such as alumina or a semiconductor such as silicon.

The antenna 53 is a conductor wound in a coil shape, is arranged in the internal space of the tubular body 51 separated from the processing space 59 in the chamber 20 by the window member 52, and an alternating current is passed through the antenna 53. Generates an electric field. It is desirable that the antenna 53 be arranged in the vicinity of the window member 52 so that the electric field generated from the antenna 53 is efficiently introduced into the processing space 59 via the window member 52. An RF power supply 54 for applying a high frequency voltage is connected to the antenna 53. A matching box 55, which is a matching circuit, is connected in series to the output side of the RF power supply 54. The matching box 55 stabilizes the plasma discharge by matching the impedances on the input side and the output side.

As shown in FIG. 2, the process gas introduction unit 58 introduces the process gas G2 containing nitrogen gas into the processing space 59. The process gas introduction unit 58 has a supply source of process gas G2 such as a cylinder (not shown), a pipe 57, and a gas introduction port 56. The pipe 57 is connected to the supply source of the process gas G2, penetrates the chamber 20 while airtightly sealing the chamber 20, extends into the inside of the chamber 20, and an end thereof is opened as a gas introduction port 56.

The gas introduction port 56 opens in the processing space 59 between the window member 52 and the rotary table 31, and introduces the process gas G2. As the process gas G2, a rare gas can be adopted, and argon gas or the like is suitable.

In such a nitriding processing unit 50, a high frequency voltage is applied from the RF power supply 54 to the antenna 53. As a result, a high-frequency current flows through the antenna 53, and an electric field due to electromagnetic induction is generated. An electric field is generated in the processing space 59 via the window member 52, and inductively coupled plasma is generated in the process gas G2. At this time, a chemical species of nitrogen containing a nitrogen atom is generated and collides with the film containing the Ga atom and the film containing the Al atom on the work 10 to bond with the Ga atom and the Al atom. As a result, the nitrogen content of the film on the work 10 can be increased, and a GaN film and an AlN film without nitrogen defects can be formed.

[Heating part]
The heating unit 60 heats the work 10 circulated and conveyed by the rotary table 31 in the chamber 20. The heating unit 60 has a heating source provided at a position facing the transport path L of the work 10 of the rotary table 31. The heating source is, for example, a halogen lamp. The heating temperature is preferably, for example, a temperature at which the work 10 is heated to about 500 ° C.

[Transfer room]
The transfer chamber 70 is a container for loading and unloading the work 10 into and out of the chamber 20 via a gate valve. As shown in FIG. 1, the transfer chamber 70 has an internal space in which the work 10 before being carried into the chamber 20 is accommodated. The transfer chamber 70 is connected to the chamber 20 via the gate valve GV1. Although not shown, the internal space of the transfer chamber 70 is provided with a transfer means for loading and unloading the tray 34 on which the work 10 is mounted from the chamber 20. The transfer chamber 70 is depressurized by an exhaust means such as a vacuum pump (not shown), and the tray 34 on which the unprocessed work 10 is mounted is carried into the chamber 20 while the vacuum of the chamber 20 is maintained by the transfer means. The tray 34 on which the processed work 10 is mounted is carried out from the chamber 20.

A load lock portion 71 is connected to the transfer chamber 70 via a gate valve GV2. The load lock unit 71 carries the tray 34 on which the unprocessed work 10 is mounted from the outside into the transfer chamber 70 by a transfer means (not shown) while maintaining the vacuum of the transfer chamber 70, and the processed work 10 This is a device for carrying out the tray 34 on which the tray 34 is mounted from the transfer chamber 70. The load lock unit 71 switches between a vacuum state in which the pressure is reduced by an exhaust means such as a vacuum pump (not shown) and an open state in which the vacuum is destroyed.

[Preliminary heating room]
The preheating chamber 80 heats the work 10 before it is carried into the chamber 20. The preheating chamber 80 includes a container connected to the transfer chamber 70, and has a heating source for heating the work 10 before being carried into the transfer chamber 70. As the heating source, for example, a heater or a heating lamp is used. The temperature for preheating is preferably a temperature at which the work 10 is heated to about 300 ° C. The tray 34 is transported between the preheating chamber 80 and the transfer chamber 70 by a transport means (not shown).

[Cooling room]
The cooling chamber 90 cools the work 10 carried out from the chamber 20. The cooling chamber 90 includes a container connected to the transfer chamber 70, and has a cooling means for cooling the work 10 mounted on the tray 34 carried out from the transfer chamber 70. As the cooling means, for example, a spraying portion for blowing cooling gas can be applied. As the cooling gas, for example, Ar gas from the source of the sputter gas G1 can be used. The cooling temperature is preferably a temperature that can be conveyed in the atmosphere, for example, 30 ° C. The tray 34 on which the processed work 10 of the transfer chamber 70 is mounted is carried into the cooling chamber 90 by a transport means (not shown).

[Control device]
The control device 100 includes an exhaust unit 23, a sputter gas introduction unit 49, a process gas introduction unit 58, a power supply unit 46, an RF power supply 54, a transport unit 30, a heating unit 60, a transfer chamber 70, a load lock unit 71, and a preheating chamber 80. , Cooling chamber 90, and various other elements that make up the film forming apparatus 1. The control device 100 is a processing device including a PLC (Programmable Logic Controller) and a CPU (Central Processing Unit), and stores a program describing control contents.

Specifically, the contents to be controlled include the initial exhaust pressure of the film forming apparatus 1, the electric power applied to the target 42 and the antenna 53, the flow rates of the sputter gas G1 and the process gas G2, the introduction time and the exhaust time, the film forming time, and the motor. The rotation speed of 32 and the like can be mentioned. As a result, the control device 100 can support a wide variety of film formation specifications. Further, the control device 100 also controls the heating temperature, the heating time, the heating temperature of the preheating chamber 80, the heating time, the cooling temperature of the cooling chamber 90, the cooling temperature, and the like of the heating unit 60.

[motion]
Next, the operation of the film forming apparatus 1 controlled by the control apparatus 100 will be described. In addition, as described below, a film forming method for forming a film by the film forming apparatus 1 is also one aspect of the present invention. FIG. 3 is a flowchart of the film forming process by the film forming apparatus 1 of the present embodiment. This film forming process is a process in which an AlN film and a GaN film are alternately laminated on the work 10 to further form a GaN layer. Since a silicon wafer or a sapphire substrate has a different crystal lattice from GaN, there is a problem that the crystallinity of GaN deteriorates when a GaN film is directly formed. In order to eliminate such inconsistency of the crystal lattice, a buffer layer is formed by alternately stacking AlN films and GaN films, and a GaN layer is formed on the buffer layer. This can be used, for example, in the manufacture of horizontal MOSFETs and LEDs, when a GaN layer is formed on a silicon wafer via a buffer layer.

First, the inside of the chamber 20 is exhausted from the exhaust port 21 by the exhaust unit 23, and is constantly depressurized to a predetermined pressure. Further, the heating unit 60 starts heating together with the exhaust gas, and the rotary table 31 starts rotating, so that the rotary table 31 passing through the heating unit 60 is heated. The inside of the chamber 20 is heated by the radiation from the heated rotary table 31. By heating together with the exhaust gas, desorption of residual gas such as water molecules and oxygen molecules in the chamber 20 is promoted. As a result, residual gas is less likely to be mixed as impurities during film formation, and the crystallinity of the film is improved. After detecting that the oxygen concentration in the chamber 20 is equal to or lower than a predetermined value by a gas analyzer such as Q-Mass, the heating of the heating unit 60 is stopped and the rotation of the rotary table 31 is stopped. Further, in the preheating chamber 80, the work 10 mounted on the tray 34 is preheated to about 300 ° C. (step S01).

The tray 34 on which the preheated work 10 is mounted is carried into the transfer chamber 70 by the transfer means, and is sequentially carried into the chamber 20 via the gate valve GV1 (step S02). In this step S02, the rotary table 31 sequentially moves the empty holding portion 33 to the carrying-in point from the transfer chamber 70. The holding unit 33 individually holds the trays 34 carried in by the transport means. In this way, all the trays 34 on which the work 10 is mounted are placed on the rotary table 31.

The work 10 is heated by the heating unit 60 starting heating again and the rotary table 31 on which the work 10 is placed starts rotating (step S03). After a predetermined time obtained in advance by simulation or experiment has elapsed, the work 10 is heated to about 500 ° C. At the time of heating, the rotary table 31 is rotated at a relatively high speed of about 100 rpm in order to perform heating more uniformly.

Then, the formation of the buffer layer is formed by alternately repeating the film formation of the AlN film by the Al film formation processing section 40B and the nitriding treatment section 50 and the film formation of the GaN film by the GaN film formation processing section 40A and the nitriding treatment section 50. I do. First, an AlN film is formed on the work 10 by the Al film forming processing unit 40B and the nitriding processing unit 50 (step S04). That is, the sputter gas introduction unit 49 supplies the sputter gas G1 through the gas introduction port 47. The sputter gas G1 is supplied around the target 42 composed of Al. The power supply unit 46 applies a voltage to the target 42. As a result, the sputter gas G1 is turned into plasma. The ions generated by the plasma collide with the target 42 and expel sputter particles containing Al atoms.

On the untreated work 10, a thin film in which sputter particles containing Al atoms are deposited is formed on the surface when passing through the Al film forming processing unit 40B. In the present embodiment, one or two Al atoms can be deposited at a film thickness at a level that can be contained in the thickness direction each time the Al film formation processing unit 40B is passed.

In this way, the work 10 that has passed through the Al film forming processing unit 40B due to the rotation of the rotary table 31 passes through the nitriding processing unit 50, and the Al atom of the thin film is nitrided in the process. That is, the process gas introduction unit 58 supplies the process gas G2 containing nitrogen gas through the gas introduction port 56. The process gas G2 containing nitrogen gas is supplied to the processing space 59 sandwiched between the window member 52 and the rotary table 31. The RF power supply 54 applies a high frequency voltage to the antenna 53.

The electric field generated by the antenna 53 through which the high-frequency current flows due to the application of the high-frequency voltage is generated in the processing space 59 via the window member 52. Then, this electric field excites the process gas G2 containing the nitrogen gas supplied to this space to generate plasma. The chemical species of nitrogen generated by the plasma collide with the thin film on the work 10 and combine with the Al atom to form a fully nitrided AlN film.

The rotary table 31 continues to rotate until a predetermined thickness of AlN film is formed on the work 10, that is, until a predetermined time obtained in advance by simulation or experiment has elapsed. In other words, the work 10 continues to circulate between the film forming process section 40 and the nitriding process section 50 until an AlN film having a predetermined thickness is formed. Since it is preferable to perform nitriding every time Al is deposited at the atomic level, the rotation speed of the rotary table 31 is set to a relatively slow speed of 50 to 60 rpm in order to balance film formation and nitriding. ..

After a lapse of a predetermined time, the operation of the Al film forming processing unit 40B is first stopped. Specifically, the voltage application to the target 42 by the power supply unit 46 is stopped.

Next, the GaN film forming processing unit 40A and the nitriding processing unit 50 form a GaN film on the work 10 (step S05). That is, the sputter gas G1 is turned into plasma by supplying the sputter gas G1 to the periphery of the target 42 by the sputter gas introduction unit 49 and applying a voltage to the target 42 by the power supply unit 46. The ions generated by the plasma collide with the target 42 and expel sputter particles containing Ga atoms.

As a result, a thin film in which sputter particles containing Ga atoms are deposited is formed on the surface of the AlN film. In the present embodiment, each time it passes through the film forming processing section 40, it can be deposited with a film thickness at a level capable of containing 1 to 2 Ga atoms.

In this way, the work 10 that has passed through the GaN film forming process section 40A due to the rotation of the rotary table 31 passes through the nitriding process section 50, and the Ga atom of the thin film is nitrided in the process. That is, as described above, the chemical species of nitrogen generated by the plasma collide with the thin film on the work 10 to bond with the Ga atom lacking the bond with nitrogen, and the GaN film without nitrogen defect is formed. It is formed.

The rotary table 31 first stops the operation of the film forming processing unit 40 after the time obtained by simulation or experiment has elapsed as the time for forming the GaN film having a predetermined thickness on the work 10. That is, after a predetermined time has elapsed, the operation of the GaN film forming processing unit 40A is stopped. Specifically, the voltage application to the target 42 by the power supply unit 46 is stopped. The formation of the AlN film and the GaN film as described above is repeated until a predetermined number of layers is reached (step S06 Nо). When the predetermined number of layers is reached (step S06 Yes), the formation of the buffer layer is completed.

Further, the GaN layer is formed by superimposing the buffer layer (step S07). The formation of this GaN layer is performed in the same manner as the formation of the GaN film in the buffer layer described above. However, the film is formed in a time having a predetermined thickness set as the GaN layer.

After forming the buffer layer and the GaN layer as described above, the operation of the GaN film forming processing unit 40A is stopped as described above, and then the operation of the nitriding processing unit 50 is stopped (step S09). Specifically, the supply of high frequency power to the antenna 53 by the RF power supply 54 is stopped. Then, the rotation of the rotary table 31 is stopped, and the tray 34 on which the film-formed work 10 is placed is carried into the cooling chamber 90 via the transfer chamber 70 by the transport means, and the work 10 is cooled to a predetermined temperature. After that, it is discharged from the load lock portion 71 (step S09).

In the above description, the nitriding unit 50 is continuously operated during the film formation of the buffer layer (steps S04 to S06), but each time each step of steps S04 to S06 is completed, the nitriding unit 50 is continuously operated. , The operation of the nitriding processing unit 50 may be stopped. In this case, the operation of the nitriding processing unit 50 is stopped after the operations of the Al film forming processing unit 40B and the GaN film forming processing unit 40A are stopped. As a result, the surface of the film formed on the work 10 can be sufficiently nitrided, and an AlN film and a GaN film without nitrogen defects can be obtained.

[effect]
(1) The film forming apparatus 1 according to the present embodiment has a chamber 20 capable of creating a vacuum inside, holds the work 10 in the chamber 20, and circulates and conveys the work 10 along a circumferential locus. The rotary table 31 has a target 42 made of a film forming material containing GaN, and a plasma generator for plasmaizing the sputtering gas G1 introduced between the target 42 and the rotary table 31. The GaN film forming processing section 40A for depositing particles of a film forming material containing GaN on the work 10 which is circulated and transported, and the GaN film forming section 40A which is deposited on the work 10 which is circulated and transported by the rotary table 31. It also has a nitrided portion 50 for nitriding particles of the film-forming material.

In the film forming method of the present embodiment, the work 10 is held by the rotary table 31 in the chamber 20 where the inside can be made a vacuum, and the work 10 is formed on the work 10 while being circulated and conveyed along the circumferential locus. A GaN film forming processing unit 40A having a target 42 made of a film forming material containing GaN and a plasma generator for converting sputter gas G1 introduced between the target 42 and the rotary table 31 into plasma, which is a film method. However, the GaN film forming process of depositing the particles of the film forming material containing GaN on the work 10 circulated and transported by the rotary table 31 and the nitriding process section 50 are circulated and transported to the work 10 by the rotary table 31. , A nitriding process for nitriding the particles of the film forming material deposited in the GaN film forming process section 40A.

In the present embodiment, a GaN film can be formed with high productivity by forming a film by sputtering on the work 10 which is circulated and conveyed by the rotary table 31 in the chamber 20. That is, unlike the MO-CVD method, it is not necessary to use a large amount of _NH3 gas, and the sputter gas G1 and the process gas G2 are flowed in a limited region in the vacuum chamber 20, and the material of the target 42 is atomized. The material is highly efficient because it is deposited and nitrided at the same thickness. Further, since the reaction gas containing hydrogen (H) is not used, an extra step such as dehydrogenation becomes unnecessary. Further, since the noble gas that is easy to handle may be introduced into the chamber 20, it is easy to maintain the state of the apparatus stably, and the yield is good. Since the heating temperature is also relatively low, about 500 ° C., the output required for the heating device is also low. Since a series of film formation processes of the buffer layer and the GaN layer are completed in the chamber 20, the oxygen concentration is the same without moving between the chambers in order to form another layer in a different chamber during the series of film formation. The film can be formed in a low environment.

In addition, since laminating and nitriding of film-forming materials having a film thickness at the atomic level are repeated, crystallinity is high and surface irregularities are small compared to the MO-CVD method, even though the film-forming time is short. A film can be formed.

Here, the results of evaluation of the film formed under the following film forming conditions are shown.
-Work: Si (111) substrate-Rotating table rotation speed: 60 rpm
・ High frequency applied power to the antenna (nitriding part): 4000W
-DC applied power to the spatter source: GaN film forming processing unit 800 to 1500 W, Al film forming processing unit 2000 to 3500 W (a film forming processing unit equipped with two sputter sources, the applied power to each sputter source value)
・ Film formation rate: GaN layer 0.28 nm / sec AlN layer 0.43 nm / sec
-Ar gas flow rate of the film formation processing unit: GaN film formation processing unit 80sccm Al film formation processing unit 45sccm
・ N2 gas flow rate of nitriding part: 30 sccm
In the above-described embodiment, the heating during the film formation is not performed.

AlN film 3 μm (No. 1), GaN film 3 μm (No. 2), AlN film 5 nm / GaN film 5 nm 30-layer laminated film (No. 3), AlN film 5 nm / GaN film formed on the work. An X-ray diffractometry analysis was performed on a laminated film (No. 4) in which a GaN film of 3 μm was laminated on a 30-layer laminated film of 5 nm. As a result, the half width (°) of the locking curve obtained by the 2θ / ω scan of the (002) plane of the film surface was No. 1 is 0.246, No. 2 is 0.182, No. 3 is 0.178, No. 4 showed 0.197.

In general, it can be said that the smaller the full width at half maximum, the smaller the variation in crystal orientation and the higher the crystallinity. In the present embodiment, a highly crystalline film having a half width (2θ / ω) of 0.2 ° or less can be formed. Further, the film thickness of the GaN buffer layer used for the GaN-based device is generally 3 to 10 μm, but the film thickness of the MO-CVD method is said to be several μm / h. In this embodiment, the film formation rate is about the same, but the hydrogen desorption step can be omitted, so that the film formation time can be shortened as compared with the MO-CVD method. Further, a film having high crystallinity can be obtained even in a low temperature film formation as compared with the MO-CVD method.

Furthermore, if the solid target 42 contains a large amount of nitrogen, there is a problem that the surface becomes an insulator, the target 42 cannot contain a large amount of nitrogen, and Ga atoms having a defective bond with nitrogen are contained. There is. When sputtered using such a target 42, a GaN film having a nitrogen defect is formed. However, in the present embodiment, by providing the nitriding processing unit 50 separately from the GaN film forming processing unit 40A, even if the target 42 contains a Ga atom having a defect in the bond with nitrogen, it is final. Therefore, the nitriding treatment unit 50 can increase the nitrogen content to obtain a GaN film without nitrogen defects. Further, in the GaN film forming process section 40A, the sputter gas G1 is used as a single argon gas without using nitrogen gas, and the film forming material deposited on the work W by the nitriding process section 50 separated from the GaN film forming section 40A. Particles can be nitrided. Therefore, the surface of the target 42 does not become an insulator, and the film formation rate can be improved by using DC discharge.

(2) The film forming apparatus 1 has an Al-forming target 42 made of a film-forming material containing Al, and deposits particles of the film-forming material containing Al on a work 10 circulated and conveyed by a rotary table 31. The film processing unit 40B has a film processing unit 40B, and the nitriding processing unit 50 nitrides particles of the film forming material deposited in the Al film forming processing unit 40B on the work 10 which is circulated and conveyed by the rotary table 31.

Therefore, for example, when a work 10 having a crystal lattice different from that of GaN such as silicon is used, the GaN film formation processing section 40A, the Al film formation processing section 40B, and the nitride processing section 50 alternately stack the GaN film and the AlN film. By forming a buffer layer, which is a thin film, it is possible to suppress a decrease in the crystallinity of GaN.

Further, since the GaN layer can be formed without being exposed to the atmosphere after the buffer layer is formed, deterioration of the outermost surface of the buffer layer is suppressed, and the GaN layer further formed on the buffer layer is formed. It is possible to prevent alteration. Further, in order to form the GaN layer, it is not necessary to move the buffer layer to an environment different from the film forming environment, and it is not necessary to reduce the transport time or to separately provide a space in which the oxygen concentration and the like are adjusted.

Further, also in the Al film forming processing section 40B, the sputtering gas G1 is used as a single argon gas without using nitrogen gas, and the film forming is deposited on the work W by the nitriding processing section 50 separated from the Al film forming processing section 40B. The particles of the material can be nitrided. Therefore, the surface of the target 42 does not become an insulator, and the film formation rate can be improved by using DC discharge.

(3) The film forming apparatus 1 has a heating unit 60 for heating the work 10 circulated and conveyed by the rotary table 31. This makes it possible to form a film having even higher crystallinity.

(4) The film forming apparatus 1 further has a preheating chamber 80 for heating the work 10 before being carried into the chamber 20. By heating the work 10 in advance by the preheating chamber 80, the heating time by the heating unit 60 can be shortened and the productivity can be improved.

[Modification example]
(1) In the above embodiment, as shown in FIG. 4, an impurity addition processing unit for adding an n-type or p-type impurity (dopant) to the formed GaN film may be provided. In this case, the GaN film formation processing unit, the nitriding processing unit, and the impurity addition processing unit are arranged in this order on the circulation transport path. The impurity addition processing unit has the same configuration as the film formation processing units of the film formation processing units 40A and 40B. More specifically, the impurity addition processing unit includes a target and a plasma generator made of a film-forming material containing n-type impurities or p-type impurities, and the film-forming material containing ions that become impurities by sputtering the target. Particles (sputtered particles) may be added to the film deposited on the work 10. For example, the Mg film forming process section 40C having a target 42 made of a film forming material containing Mg and the Si film forming process section 40D having a target 42 made of a film forming material containing Si can be used as an impurity addition processing section. .. The Mg film forming process section 40C and the Si film forming process section 40D have the same configuration as the GaN film forming process section 40A except for the material of the target 42. That is, the Mg film forming processing unit 40C and the Si film forming processing unit 40D are a plasma generator composed of a sputter source composed of a target 42, a backing plate 43 and an electrode 44, a power supply unit 46 and a sputter gas introduction unit 49. To prepare for.

In such an embodiment, the p-channel (p) in which Mg ions are added to the GaN layer by operating the Mg film forming section 40C together with the GaN film forming section 40A and the nitrided section 50 at the time of forming the GaN film. A layer containing (type semiconductor) can be formed. Further, when the GaN film is formed, the Si film forming section 40D is operated together with the GaN film forming section 40A and the nitrided section 50 to form an n-channel (n-type semiconductor) in which Si ions are added to the GaN layer. A layer containing the film can be formed.

In order to form n-channels and p-channels, conventionally, after forming a GaN film, Mg and Si ions are implanted by an ion implantation device such as an ion beam and added by heat treatment. However, in such a method, since ions are implanted into a membrane having a predetermined film thickness, the implantation depth and the implantation amount (dose amount) may differ from the design values, and it is not easy to control. .. According to this aspect, the deposition of the GaN film and the addition of Si ion or Mg ion are alternately repeated until the GaN film reaches a predetermined film thickness. As a result, it is easy to control the injection depth and injection amount of Mg ions and Si ions according to the film thickness of the GaN layer formed in each rotation by the electric power applied to the target 42 and the rotation speed of the rotary table 31. Will be.

Further, a series of film formation of a buffer layer, a GaN layer, a layer including n channels, and a layer including p channels can be performed in one chamber 20. Therefore, in order to form n-channels and p-channels, it is not necessary to move the GaN layer to an environment different from the film formation environment, and it is necessary to reduce the transport time and separately provide a space in which the oxygen concentration is adjusted. not.

(2) In addition to the above aspects, as shown in FIG. 5, the film forming process section 40 may include an InN film forming process section 40E having a target 42 made of a film forming material containing InN. Indium (In) alone has a low melting point, and in fact, it is an InN target to which nitrogen (N) is added in order to make it a solid target 42. It is the same as above that the InN target contains an In atom that is poorly bound to nitrogen.

In such an embodiment, the InGaN film can be formed by operating the InN film forming process section 40E together with the GaN film forming process section 40A and the nitriding process section 50 at the time of forming the GaN film. As shown in FIG. 6A, this InGaN film functions as a light emitting layer 14 of the LED. FIG. 6A shows a laminated structure of LEDs, on which a buffer layer 11, a GaN layer 12 including an n-channel, a buffer layer 11, a GaN layer 13 including a p-channel, and a light emitting layer 14 are shown on a silicon work 10. The transparent conductive film 15 is laminated. The transparent conductive film 15 is an ITO (Indium Tin Oxid) film. The electrodes are not shown. Further, FIG. 6B shows the buffer layer 11.

In such an embodiment, a series of film formation of the buffer layer 11 in the LED, the GaN layer 12 including the n-channel, the buffer layer 11, the GaN layer 13 including the p-channel, and the light emitting layer 14 can be performed in one chamber 20. .. Therefore, in order to form the light emitting layer 14, it is not necessary to move the GaN layer to an environment different from the film forming environment, and the transport time can be reduced. Alternatively, it is not necessary to separately provide a space in which the oxygen concentration or the like is adjusted. Further, the color can be changed depending on the thickness of the light emitting layer 14, but in this embodiment, the thickness can be easily controlled, so that the light emitting layer 14 having a different color can be easily produced.

(3) The power source used for the film forming processing unit for forming a different type of material may be a different type of power source. For example, the power supply used for one film forming processing unit may be a DC power supply, and the power supply used for the other film forming processing unit may be a pulse power supply including a pulse switch. In this case, when the above-mentioned Mg ion is added, the power supply used for the GaN film formation processing unit 40A may be a DC power supply, and the power supply used for the Mg film formation processing unit 40C may be a pulse power supply. Alternatively, when adding Si ions, the power supply used for the GaN film forming processing unit 40A may be a DC power supply, and the power source used for the Si film forming processing unit 40D may be a pulse power supply. In particular, by setting the pulse width and power so that a large amount of power due to pulse waves is applied in a short time, such as HiPIMS (High Power Impulse Magnetron Sputtering), high-density plasma is generated and the ionization rate of sputtered particles is dramatically increased. It is possible to improve the ion implantation more efficiently.

Alternatively, the power supply used for the film forming processing unit for forming the same type of material may be a combination of different types of power supplies and may be switched and used at a predetermined timing. For example, a DC power supply and a pulse power supply including a pulse switch may be combined and used by switching at a predetermined timing. In this case, when forming a GaN film, a pulse power supply may be used only for the initial layer in contact with the substrate or another type of film, and after forming a predetermined film thickness, the film formation may be switched to a DC power supply.

[Other embodiments]
Although the embodiment of the present invention and the modification of each part have been described, the embodiment and the modification of each part are presented as an example, and the scope of the invention is not intended to be limited. These novel embodiments described above can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the invention described in the claims.

Further, the type and number of film forming processing portions 40 and the number of nitriding processing units 50 provided in the chamber 20 are not limited to the above aspects. The film forming processing unit 40 may be configured as a film forming apparatus 1 for forming a GaN film by using only the GaN film forming processing unit 40A. Further, in addition to the film formation processing section 40 described above, the nitriding treatment section 50 may be added regardless of whether the film formation treatment section 40 made of a different target material is added or the film formation treatment section made of the same target material is added. May be added. For example, a film forming processing unit 40 having a target 42 containing indium oxide and tin oxide as a film forming material of ITO may be added so that the ITO film can be formed in the chamber 20. In this case, in the nitriding treatment unit 50, oxygen gas may be introduced instead of nitrogen gas to supplement the oxidation of the ITO film. Further, for example, the GaN film forming process section 40A, the Al film forming process section 40B, and the nitriding process section 50 are operated at the same time so that an AlGaN (Aluminum Gallium Nitride) film containing Ga, Al, and N can be formed. May be good.

Further, the n-type impurity or p-type impurity added in the impurity addition processing unit is not limited to the above-described embodiment. For example, Ge or Sn is also mentioned as an n-type impurity. In this case, as the film-forming material constituting the target provided in the impurity addition processing section, a film-forming material containing Ge or Sn can be applied instead of Si.

1 Film formation device 10 Work 11 Buffer layer 12 GaN layer 13 GaN layer 14 Light emitting layer 15 Transparent conductive film 20 Chamber 20a Ceiling 20b Inner bottom surface 20c Inner peripheral surface 21 Exhaust port 22 Separation part 23 Exhaust part 30 Transport part 31 Rotating table 32 Motor 33 Holding unit 34 Tray 40 Film forming processing unit 40A GaN film forming processing unit 40B Al film forming processing unit 40C Mg film forming processing unit 40D Si film forming processing unit 40E InN film forming processing unit 41 Processing space 42 Target 43 Backing plate 44 Electrode 46 Power supply unit 47 Gas introduction port 48 Piping 49 Spatter gas introduction unit 50 Membrane processing unit 51 Cylindrical body 52 Window member 53 Antenna 54 RF power supply 55 Matching box 56 Gas introduction port 57 Piping 58 Process gas introduction unit 59 Processing space 60 Heating unit 70 Transfer chamber 71 Load lock unit 80 Preheating chamber 90 Cooling chamber 100 Control device

Claims (12)

A chamber that can be evacuated inside,
A rotary table provided in the chamber, which holds the work and circulates and conveys the work in a circumferential locus.
The workpiece having a target made of a film forming material containing GaN and a plasma generator for converting sputter gas introduced between the target and the rotary table into plasma, is circulated and conveyed by the rotary table. A GaN film forming processing unit that deposits particles of a film forming material containing GaN by sputtering,
A nitriding unit for nitriding particles of the film-forming material deposited in the GaN film-forming processing unit on the work circulated and transported by the rotary table.
A film forming apparatus characterized by having. The film forming apparatus according to claim 1, wherein the sputter gas is a single argon gas. It has a target made of a film forming material containing Al, and has an Al film forming processing unit for depositing particles of the film forming material containing Al by sputtering on the work which is circulated and conveyed by the rotary table.
The first or second aspect of the present invention, wherein the nitriding unit nitrides particles of the film-forming material deposited in the Al film-forming material on the work circulated and transported by the rotary table. Film forming equipment. The film forming apparatus according to claim 3, wherein the GaN film forming processing section, the Al film forming processing section, and the nitriding processing section form a film in which a GaN film and an AlN film are alternately laminated. The GaN film forming section has an impurity addition processing section for adding n-type impurities or p-type impurities to the particles of the film-forming material containing GaN deposited on the work by sputtering.
The film forming apparatus according to any one of claims 1 to 4, wherein the GaN film forming processing section, the nitriding processing section, and the impurity adding processing section are arranged in this order on the circulation transport path. The impurity addition processing unit has a target made of a film forming material containing Mg, and a Mg film forming processing unit for depositing particles of the film forming material containing Mg on the work circulated and conveyed by the rotary table. And
The film forming apparatus according to claim 5, wherein the GaN film forming processing section, the nitriding processing section, and the Mg film forming processing section form a film obtained by adding Mg to GaN. The impurity addition processing unit has a target made of a film forming material containing Si, and a Si film forming processing unit for depositing particles of the film forming material containing Si on the work circulated and conveyed by the rotary table. And
The film forming apparatus according to claim 5, wherein the GaN film forming processing section, the nitriding processing section, and the Si film forming processing section form a film obtained by adding Si to GaN. It has an InN film forming processing unit which has a target made of a film forming material containing InN and deposits particles of the film forming material containing InN on the work which is circulated and conveyed by the rotary table.
The film forming apparatus according to any one of claims 1 to 7, wherein the GaN film forming processing section, the nitriding processing section, and the InN film forming processing section form an InGaN film. The film forming apparatus according to any one of claims 1 to 8, further comprising a heating portion for heating the work circulated and conveyed by the rotary table. The film forming apparatus according to claim 9, further comprising a preheating chamber for heating the work before being carried into the chamber. The film forming apparatus according to any one of claims 1 to 10, wherein the electric power applied to the impurity addition processing unit is applied by a pulse power source. It is a film forming method for forming a film on the work while holding the work by a rotary table and circulating and transporting the work along a circumferential locus in a chamber where the inside can be evacuated.
A GaN film-forming processing unit having a target made of a film-forming material containing GaN and a plasma generator for converting sputter gas introduced between the target and the rotary table into plasma is circulated and conveyed by the rotary table. A GaN film forming process for depositing particles of a film forming material containing GaN on the work.
The nitriding treatment in which the nitriding treatment unit nitrides the particles of the film-forming material deposited in the GaN film-forming processing section on the work circulated and transported by the rotary table.
A film forming method comprising.

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