JP2022046879A - Vaporizer, substrate processing apparatus, cleaning method, method for manufacturing semiconductor device and program - Google Patents

Abstract

A vaporization apparatus, a substrate processing apparatus, a cleaning method, a method for manufacturing a semiconductor device, and a program for stabilizing the flow rate of gas generated by vaporizing a liquid source are provided. A vaporizer provided in a substrate processing apparatus includes a raw material container (600) for storing a liquid raw material, a first heating section (an internal heater (610)) that is immersed in the liquid raw material and heats the liquid raw material, and a raw material container. a second heating unit (external heater 620) that heats the liquid raw material; a first temperature sensor 630 that is immersed in the liquid raw material and measures the temperature of the liquid raw material; 2 temperature sensor 640, and control to control the first heating unit based on the temperature measured by the first temperature sensor, and to control the second heating unit based on the temperature measured by the second temperature sensor and [Selection drawing] Fig. 4

Description

The present disclosure relates to vaporizers, substrate processing devices, cleaning methods, semiconductor device manufacturing methods, and programs.

In order to form a thin film used for semiconductor devices, raw material gas may be supplied on the substrate. Further, in order to remove the film accumulated in the treatment chamber or the like due to the formation of the thin film, cleaning gas may be supplied to the treatment chamber or the like to perform gas cleaning. In order to generate these raw material gases and cleaning gases, it is common practice to vaporize a liquid raw material (liquid gas source) by a vaporizer. (For example, Patent Document 1).

International Publication No. 2009/039791 Pamphlet

When the liquid raw material is vaporized to generate a gas such as a raw material gas or a cleaning gas, the temperature of the liquid raw material may drop sharply due to the vaporization of the liquid raw material, resulting in a decrease in the gas flow rate.

An object of the present disclosure is to provide a technique capable of stabilizing the flow rate of a gas produced by vaporizing a liquid raw material.

According to one aspect of the present disclosure
A raw material container for storing liquid raw materials and
A first heating unit that is immersed in the liquid raw material stored in the raw material container to heat the liquid raw material, and a first heating unit.
A second heating unit that heats the raw material container,
A first temperature sensor that is immersed in the liquid raw material stored in the raw material container and measures the temperature of the liquid raw material, and
A second temperature sensor that is immersed in the liquid raw material stored in the raw material container and measures the temperature of the liquid raw material, and
It is configured to control the first heating unit based on the temperature measured by the first temperature sensor and to control the second heating unit based on the temperature measured by the second temperature sensor. Control unit and
Technology is provided.

It is possible to provide a technique capable of stabilizing the flow rate of a gas produced by vaporizing a liquid raw material.

It is a schematic block diagram of the vertical processing furnace of the substrate processing apparatus preferably used in one Embodiment of this disclosure, and is the figure which shows the processing furnace part in the vertical sectional view. It is a schematic block diagram of the vertical processing furnace of the substrate processing apparatus preferably used in one Embodiment of this disclosure, and is the figure which shows the processing furnace part in the cross-sectional view taken along line AA of FIG. It is a schematic block diagram of the controller of the substrate processing apparatus preferably used in one Embodiment of this disclosure, and is the figure which shows the control system of the controller by the block diagram. It is a figure which shows the schematic structure of the vaporization apparatus provided in the substrate processing apparatus preferably used in one Embodiment of this disclosure in a vertical cross section. It is a figure which shows the schematic structure of the vaporization apparatus provided in the substrate processing apparatus preferably used in one Embodiment of this disclosure in a horizontal cross section. It is a film formation sequence diagram in the case of performing film formation on the wafer in one embodiment of the present disclosure. It is a figure which shows the schematic structure of the vaporization apparatus provided in the substrate processing apparatus preferably used in the other embodiment of this disclosure in a vertical cross section. It is a figure which shows the schematic structure of the vaporization apparatus provided in the substrate processing apparatus preferably used in the other embodiment of this disclosure in a vertical cross section. It is a figure which shows the schematic structure of the vaporization apparatus provided in the substrate processing apparatus preferably used in the other embodiment of this disclosure in a vertical cross section.

<Embodiment of the present disclosure>
Hereinafter, one embodiment of the present disclosure will be described with reference to FIGS. 1 to 5.

(1) Configuration of processing furnace The processing furnace 202 has a heater 207 as a heating means (heating mechanism, heating system). The heater 207 has a cylindrical shape and is vertically installed by being supported by the heater base.

Inside the heater 207, a reaction tube 203 constituting a reaction vessel (processing vessel) is arranged concentrically with the heater 207. The reaction draft 203 is a heat-resistant material (for example, quartz (SiO ₂ ).
), Silicon carbide (SiC), etc.), and is formed in a cylindrical shape with the upper end closed and the lower end open. Below the reaction tube 203, a manifold (inlet flange) 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS), and is formed in a cylindrical shape with open upper and lower ends. An O-ring 220a as a sealing member is provided between the upper end portion of the manifold 209 and the reaction tube 203. When the manifold 209 is supported by the heater base, the reaction tube 203 is in a vertically installed state. A processing chamber 201 is formed in the hollow portion of the cylinder of the processing container.

The processing chamber 201 is configured to accommodate the wafer 200 as a substrate in a state of being arranged in multiple stages in the vertical direction in a horizontal posture by a boat 217 described later.

Nozzles 410, 420, 430 are provided in the processing chamber 201 so as to penetrate the side wall of the manifold 209. Nozzles 410, 420, 430 have gas supply pipes 310,
320 and 330 are connected, respectively.

The gas supply pipes 310, 320, and 330 are provided with a mass flow controller (MFC) 512,522, 523, which is a flow control unit (flow control unit), and valves 314, 324, 334, which are on-off valves, in order from the upstream side. .. On the downstream side of the valves 314, 324, 334 of the gas supply pipes 310, 320, 330, the gas supply pipes 510,520 for supplying the inert gas
, 530 are connected respectively. The gas supply pipes 510, 520, and 530 are provided with MFC 512, 522, 523, which is a flow rate controller (flow control unit), and valves 514, 524, 534, which are on-off valves, in this order from the upstream side.

The nozzles 410, 420, 430 are configured as L-shaped nozzles, and their horizontal portions are provided so as to penetrate the side wall of the manifold 209. Nozzles 410, 420,
The vertical portion of the 430 rises upward (upper in the arrangement direction of the wafer 200) along the inner wall of the reaction tube 203 in the annular space formed between the inner wall of the reaction tube 203 and the wafer 200. It is provided (that is, so as to rise from one end side to the other end side of the wafer arrangement region). That is, the nozzles 410, 420, and 430 are provided along the wafer arrangement region in the region horizontally surrounding the wafer arrangement region on the side of the wafer arrangement region in which the wafer 200 is arranged.

Gas supply ports 410a, 42 for supplying gas are on the side surfaces of the nozzles 410, 420, 430.
0a and 430a are provided along the arrangement direction of the wafer 200 so as to correspond to the substrate arrangement region in which the wafer 200 is arranged. The gas supply ports 410a, 420a, and 430a are opened so as to face the center of the reaction tube 203. The gas supply ports 410a, 420a, 430a
Are provided from the lower part to the upper part of the reaction tube 203, each having the same opening area, and further provided with the same opening pucci. However, the gas supply ports 410a, 420a,
430a is not limited to the above-mentioned form. For example, the opening area may be gradually increased from the lower part to the upper part of the reaction tube 203. As a result, the gas supply ports 410a, 420a, 43
It is possible to make the flow rate of the gas supplied from 0a uniform.

From the gas supply pipe 310, a raw material gas (precursor) as a processing gas is supplied to the processing chamber 201 via the MFC 312, the valve 314, and the nozzle 410. The raw material gas is, for example, a gas produced by vaporizing a liquid raw material (liquid gas source) that is in a liquid state under normal temperature and pressure, and is a metal-containing gas (Al) containing aluminum (Al), which is a metal element. Trimethylaluminum (Al (CH ₃ ) ₃ , abbreviated as TMA), which is a contained raw material gas and an Al-containing gas), is used. TMA is an organic raw material and is an alkylaluminum in which an alkyl group is bonded to aluminum as a ligand.

When the raw material gas that self-decomposes at a predetermined temperature is supplied from the gas supply pipe 310, the raw material gas supply system is mainly composed of the gas supply pipe 310, the MFC 312, and the valve 314. The nozzle 410 may be included in the raw material gas supply system. The raw material gas supply system can also be referred to as a raw material supply system. When the metal-containing gas is supplied from the gas supply pipe 310, the raw material gas supply system can also be referred to as a metal-containing gas supply system.

When an aluminum-containing raw material is used as the metal-containing gas, the metal-containing gas supply system can also be referred to as an aluminum-containing raw material supply system. When TMA is used as the aluminum-containing raw material, the aluminum-containing raw material supply system can also be referred to as a TMA supply system.

When the reaction gas (reactant) is supplied from the gas supply pipe 320, the gas supply pipe 3 is mainly used.
A reaction gas supply system (reactant supply system) is configured by 20, MFC322, and a valve 324. The nozzle 420 may be included in the reaction gas supply system. When an oxygen-containing gas (oxidizing gas, oxidizing agent) is supplied as the reaction gas, the reaction gas supply system can also be referred to as an oxygen-containing gas (oxidizing gas, oxidizing agent) supply system. When O ₃ is used as the oxygen-containing gas, the oxygen-containing gas supply system can also be referred to as an O ₃ supply system. When the reaction gas flows from the nozzle 420, the nozzle 420 may be referred to as a reaction gas nozzle.

Cleaning gas (etching gas) is used as the processing gas from the gas supply pipe 330.
It is supplied into the processing chamber 201 via the MFC 332, the valve 334, and the nozzle 430. Examples of the cleaning gas include hydrogen chloride (HCl), silicon tetrachloride (SiCl ₄ ), and thionyl chloride, which are gases produced by vaporizing a liquid raw material (liquid gas source) that is in a liquid state under normal temperature and pressure. One or more gases selected from the group (SOCl ₂ ), boron tribromide (BBr ₃ ), silicon tetrabromide (SiBr ₄ ) and bromine (Br ₂ ) are used.

The cleaning gas supply system is mainly composed of the gas supply pipe 330, the MFC 332, and the valve 334. The nozzle 430 may be included in the cleaning gas supply system.

Further, from the gas supply pipes 510, 520, 530, the inert gas is MFC512,5.
For example, _N2 gas is used as the inert gas that is to be supplied to the processing chamber 201 via 22,532, valves 514,524,534, and nozzles 410,420,430.

The gas supply pipes 510, 520, 530, MFC 512, 522, 532, and valves 514, 524, 534 mainly constitute an inert gas supply system.

On the other hand, one end of the exhaust pipe 231 as an exhaust flow path for exhausting the atmosphere of the processing chamber 201 is connected to the wall surface of the manifold 209. The exhaust pipe 231 includes a pressure sensor 245 as a pressure detector (pressure detector) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 24 as an exhaust valve (pressure adjusting unit).
3 is attached, and a vacuum pump 246 as a vacuum exhaust device is attached to the end of the exhaust pipe 231.

The APC valve 243 can perform vacuum exhaust and vacuum exhaust stop of the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is operated, and further, the vacuum pump 246.
The valve is configured so that the pressure of the processing chamber 201 can be adjusted by adjusting the valve opening degree based on the pressure information detected by the pressure sensor 245 in the state of operating. The exhaust system is mainly composed of the exhaust pipe 231, the APC valve 243, and the pressure sensor 245. The vacuum pump 246 may be included in the exhaust system. The exhaust pipe 231 is not limited to the case where it is provided in the processing pipe 203, and may be provided in the manifold 209 in the same manner as the nozzles 410, 420, 430.

Below the manifold 209, a seal cap 219 is provided as a furnace palate body capable of airtightly closing the lower end opening of the manifold 209. The seal cap 219 is formed of a metal such as SUS and has a disk shape. An O-ring 220 as a sealing member that comes into contact with the lower end of the manifold 209 is provided on the upper surface of the seal cap 219. On the opposite side of the processing chamber 201 with respect to the seal cap 219, a rotation mechanism 267 for rotating the boat 217, which will be described later, is installed. The rotation shaft 255 of the rotation mechanism 267 penetrates the seal cap 219 and is connected to the boat 217.

The seal cap 219 is configured to be raised and lowered in the vertical direction by a boat elevator 115 as a raising and lowering mechanism installed vertically outside the processing pipe 203. The boat elevator 115 raises and lowers the seal cap 219 to move the boat 217 into the processing chamber 20.
1 It is configured so that it can be carried in and out inside and outside. Boat elevator 11
Reference numeral 5 is configured as a transport device (conveyance mechanism) for transporting the boat 217, that is, the wafer 200, inside and outside the processing chamber 201.

The boat 217 as a substrate support supports a plurality of wafers, for example, 25 to 200 wafers 200 in a horizontal position and vertically aligned with each other, that is, to support them in multiple stages. It is configured to be arranged at intervals. A top plate 215 is provided on the zenith of the boat 217. The boat 217 and the top plate 215 are, for example, quartz or S.
It is composed of a heat resistant material such as iC. In the heat insulating region at the lower part of the boat 217, a heat insulating plate 218 made of a heat-resistant material such as quartz or SiC is supported in multiple stages in a horizontal posture. With this configuration, the heat from the heater 207 is less likely to be transmitted to the seal cap 219 side. However, this embodiment is not limited to the above-mentioned embodiment. For example, boat 217
A heat insulating cylinder configured as a tubular member made of a heat-resistant material such as quartz or SiC may be provided without providing the heat insulating plate 218 at the lower portion of the above.

Further, in the processing chamber 201, as shown in FIG. 2, a temperature sensor 26 as a temperature detector 26
3 is arranged. Heater 207 based on the temperature information detected by the temperature sensor 263
By adjusting the degree of energization to, the temperature of the processing chamber 201 has a desired temperature distribution. The temperature sensor 263 is provided along the inner wall of the processing pipe 203 like the nozzles 410 and 420.

As shown in FIG. 3, the controller 121, which is a control unit (control means), is a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. It is configured. The RAM 121b, the storage device 121c, and the I / O port 121d are configured so that data can be exchanged with the CPU 121a via the internal bus. An input / output device 122 configured as, for example, a touch panel or the like is connected to the controller 121.

The storage device 121c may be, for example, a flash memory or an HDD (Hard Disk Dri).
It is composed of ve) and the like. In the storage device 121c, at least a control program for controlling the temperature of the liquid raw material, a control program for controlling the operation of the substrate processing device, a process recipe in which the procedure and conditions of the semiconductor device manufacturing method described later are described, and the like are contained. Either is stored readable. The process recipes are combined so that the controller 121 can execute each step (each step) in the method of manufacturing a semiconductor device described later and obtain a predetermined result, and functions as a program. Hereinafter, this process recipe, control program, etc. are collectively referred to simply as a program. When the term program is used in the present specification, it may include only a process recipe alone, a control program alone, or a combination of a process recipe and a control program. The RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily held.

The I / O port 280d is the above-mentioned MFC 312,322,332,512,522,5.
32, valve 314,324,334,344,514,524,534, pressure sensor 2
45, APC valve 243, vacuum pump 246, heater 207, temperature sensor 263, rotation mechanism 267, boat elevator 115, internal heater 610, external heater 620, first temperature provided in the vaporizer (vaporization gas supply system) described later. It is connected to at least one of a sensor 630, a second temperature sensor 640, a liquid level detection sensor 660, and the like.

The control unit (not shown) that controls the internal heater 610 and the external heater 620 and the control unit 121 that controls the substrate processing device 10 may be configured separately. When configured separately, the control unit that controls the internal heater 610 and the external heater 620 constitutes a vaporizer. When configured separately, the control unit that controls the internal heater 610 and the external heater 620 may be configured to be connected to the control unit 121 that controls the substrate processing device 10.

Regarding the control unit that controls the internal heater 610 and the external heater 620, at least one of the internal heater 610, the external heater 620, the first temperature sensor 630, the second temperature sensor 640, and the liquid level detection sensor 660 It suffices if it is connected.

The CPU 121a is configured to read a control program from the storage device 121c and execute it, and to read a recipe or the like from the storage device 121c in response to an input of an operation command from the input / output device 122 or the like. The CPU 121a has an operation of adjusting the flow rate of various gases by MFC 312, 322, 332, 512, 522, 532, an opening / closing operation of valves 314, 324, 334, 514, 524, 534, and an APC valve so as to follow the contents of the read recipe. Opening and closing operation of 243 and pressure adjustment operation based on pressure sensor 245 by APC valve 243, temperature adjustment operation of heater 207 based on temperature sensor 263, start and stop of vacuum pump 246, rotation and rotation speed adjustment of boat 217 by rotation mechanism 267. Operation, raising and lowering the boat 217 by the valve elevator 115, accommodating the wafer 200 in the boat 217, an internal heater 610 based on the first temperature sensor 630, and a second temperature sensor 64.
It is configured to control the temperature adjustment operation of the liquid raw material of the external heater 620 based on 0.

The controller 121 is stored in an external storage device (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or DVD, a magneto-optical disk such as MO, a semiconductor memory such as a USB memory or a memory card) 123. The above-mentioned program can be configured by installing it on a computer. The storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium. In the present specification, the recording medium is referred to as a recording medium.
The storage device 121c alone may be included, the external storage device 123 alone may be included, or both of them may be included. The program may be provided to the computer by using a communication means such as the Internet or a dedicated line without using the external storage device 123.

(2) Configuration of Vaporizer (Vaporization Gas Supply System) Next, a vaporizer that stores a liquid raw material and vaporizes it to generate a processing gas such as a cleaning gas will be described.

As shown in FIG. 4, the raw material container 600 includes a gas supply pipe 330 for supplying cleaning gas as a processing gas in the processing chamber 201, and a liquid raw material supply pipe 650 for supplying a liquid raw material for cleaning gas in the raw material container 600. Is connected.
For example, SiC ₄ liquid is stored in the raw material container 600 as a liquid raw material for cleaning gas, and the vaporized cleaning gas enters the gas supply pipe 330 and enters the gas supply pipe 330.
, MFC332, and valve 334, are supplied to the processing chamber 201. As a result, the film adhering to the inside of the processing chamber 201 is etched and the inside of the processing chamber 201 is cleaned.

Further, in the raw material container 600, an internal heater 610 (for example, a resistance heater) as a first heating device (first heating unit) for immersing the liquid raw material in the liquid raw material to heat the liquid raw material, and the internal heater 610 are controlled. A first temperature sensor 630 that measures the temperature of the liquid raw material by immersing it in the liquid raw material, and a second temperature sensor 630 that measures the temperature of the liquid raw material by immersing it in the liquid raw material to control the external heater 620 described later. A temperature sensor 640 and a liquid level detection sensor 660 for detecting the height (level) of the liquid level of the liquid raw material are provided. The first temperature sensor 630 and the second temperature sensor 640 are each composed of, for example, a thermocouple.

A power source (not shown) is connected to the internal heater 610, and the temperature of the internal heater 610 is adjusted so that the liquid temperature becomes a predetermined temperature based on the temperature measured by the first temperature sensor 630. More specifically, for example, the magnitude of the electric power supplied from the power source to the internal heater 610 is controlled by the controller 121 so that the temperature measured by the first temperature sensor 630 becomes a predetermined first temperature. ..

The raw material container 600 is covered with an external heater (for example, a jacket heater) 620 as a second heating device (second heating unit) for heating the raw material container 600 and the liquid raw material inside the raw material container 600. A power source is connected to the external heater 620, and the temperature of the external heater is adjusted so that the liquid temperature becomes a predetermined temperature based on the temperature measured by the second temperature sensor 640. More specifically, for example, the magnitude of the electric power supplied to the external heater 620 is controlled by the controller 121 so that the temperature measured by the second temperature sensor 640 becomes a predetermined second temperature.

It is desirable that both the predetermined first temperature and the second temperature are set to the same value as the temperature of the desired liquid raw material. However, different values may be set for the predetermined first temperature and the second temperature in consideration of the temperature distribution of the liquid raw material in the raw material container 600 and the like.

Further, the liquid level detection sensor 660 detects the height of the liquid level of the liquid raw material, and when the height of the detected liquid level becomes lower than a predetermined height, the internal heater 610 and the external heater 620 are reached. The controller 121 controls to stop the power supply of the liquid raw material or to supply the liquid raw material from the liquid raw material supply pipe 650.

An example of the operation of the vaporizer will be described. When the cleaning gas is supplied from the raw material container 600 to the processing chamber 201 via the supply pipe 330, the MFC 332, the valve 334, and the nozzle 430a, the temperature of the liquid raw material in the raw material container 600 is measured by the first temperature sensor 630 and the second temperature sensor 630. Measure with the temperature sensor 640. Here, when the supply of the cleaning gas, which is the vaporization gas, is started, the temperature of the liquid raw material in the raw material container 600 drops sharply due to the heat of vaporization. Therefore, the temperature of the internal heater 610 is adjusted so that the temperature of the liquid raw material becomes a predetermined temperature based on the temperature of the liquid raw material measured by the first temperature sensor 630, and the temperature is measured by the second temperature sensor 640. The temperature of the external heater 620 is adjusted so that the temperature of the liquid raw material becomes a predetermined temperature based on the temperature of the liquid raw material. As described above, the temperature of the liquid raw material, which has dropped sharply after the supply of the cleaning gas, can be raised to a predetermined temperature in a short time by heating with the internal heater 610 and the external heater 620.

Further, by individually controlling the internal heater 610 and the external heater 620, the temperature responsiveness of the liquid raw material to the control by the controller 121 is improved, and the liquid raw material can be raised to a predetermined temperature in a short time. .. In addition, since the liquid raw material can be raised to a predetermined temperature in a short time, it is possible to prevent the saturated vapor pressure from dropping due to the temperature drop of the liquid raw material due to the heat of vaporization when the cleaning gas is supplied, which is necessary for the liquid raw material. Since it is possible to secure a sufficient vapor pressure, it is possible to prevent a decrease in the flow rate of the cleaning gas.

Further, in the present embodiment, as shown in FIG. 4, the first temperature sensor 630 (more specifically, the temperature detection point of the first temperature sensor 630) and the second temperature sensor 640 (more specifically, the temperature detection point). It is desirable that the temperature detection points) of the second temperature sensor 640 are arranged so as to be located at the same height in the vicinity of the bottom surface of the raw material container 600, respectively. More specifically, it is desirable that each temperature sensor is arranged at a position lower than the internal heater 610. By arranging each temperature sensor in this way, even if the liquid level of the liquid raw material drops below the height in normal operation for some reason, the temperature of the liquid raw material can be continuously measured. For example, when it is detected that the temperature of the liquid raw material drops rapidly even though the power supply to the internal heater 610 is continued, the liquid level of the liquid raw material drops below the internal heater 610. Therefore, it is possible to perform control such as stopping the power supply to the internal heater 610.

Further, it is desirable that the first temperature sensor 630 is arranged at a position as far as possible from the internal heater 610 and the external heater 620 which are heating sources. By arranging the first temperature sensor 630 at a position away from the heating source, the temperature of the portion of the liquid raw material in the raw material container 600 where the temperature is relatively low is measured, and based on the measured temperature. Since the internal heater 610 is controlled, the entire liquid raw material can be heated to a temperature equal to or higher than a desired temperature. For example, as shown in FIG. 5, in the horizontal direction, the distance between the first temperature sensor 630 and the internal heater 610 (distance D1 in the figure) and the distance between the external heater 620 (for example, the distance D2 in the figure) are equal. (Ie, an intermediate position between the heating sources). Similarly, it is desirable that the second temperature sensor 640 is arranged at a position as far as possible from the internal heater 610 and the external heater 620 which are heating sources. For example, as shown in FIG. 5, in the horizontal direction, the distance between the second temperature sensor 640 and the internal heater 610 (for example, the distance D3 in FIG. 5) and the distance between the external heater 620 (for example, the distance D4 in FIG. 5) ) Are equal (that is, an intermediate position between the heating sources). Considering the distance not only in the horizontal direction but also in the vertical direction, the first temperature sensor 630 and / or the second temperature sensor 640 is arranged at a position where the distance between the internal heater 610 and the external heater 620 is equal. You may. The distance from the inner wall surface of the raw material container 600 heated by the external heater 620 may be regarded as the distance from the external heater 620 in the raw material container 600.

In the present embodiment, an example of using a main vaporizer to generate a cleaning gas has been described, but the main vaporizer is used as a vaporizer for generating a raw material gas or a reaction gas as a processing gas other than the cleaning gas. It can also be applied.

(2) Substrate processing step Next, as one step of the manufacturing process of the semiconductor device (device) according to the present embodiment, the above-mentioned substrate processing device 10 is used to form a film on the substrate to form a semiconductor device (device). An example of the manufacturing method will be described. In the following description, the operation of each part constituting the substrate processing apparatus 10 is controlled by the controller 280.

In addition, when the word "wafer" is used in this specification, it may mean "wafer itself" or "a laminate (aggregate) of a wafer and a predetermined layer or film formed on the surface thereof).
"(That is, a wafer including a predetermined layer, film, etc. formed on the surface) may be used. In addition, when the term "wafer surface" is used in the present specification, "
It may mean "the surface of the wafer itself (exposed surface)" or "the surface of a predetermined layer or film formed on the wafer, that is, the outermost surface of the wafer as a laminated body". The term "wafer" is also used in the present specification as if the term "wafer" is used.

(A) Film formation step A sequence diagram 6 for forming a film on a wafer 200 using a substrate processing apparatus 10 will be described. In the present embodiment, the processing chamber 201 in which a plurality of wafers 200 are loaded is housed.
Is heated at a predetermined temperature. Then, a raw material gas supply step of supplying TMA gas as a raw material gas from the supply hole 410a of the nozzle 410 to the processing chamber 201, and a supply hole 420a of the nozzle 420.
The reaction gas supply step of supplying the reaction gas from the above is performed a predetermined number of times (n times). As a result, an aluminum oxide film (AlO film) is formed on the wafer 200 as a film containing Al and O.

(Wafer delivery)
A plurality of wafers 200 are carried into the processing chamber 201. Specifically, when a plurality of wafers 200 are loaded into the boat 217, as shown in FIG. 1, the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and is lifted in the processing chamber. It is carried into 201. In this state, the seal cap 219 is in a state of closing the lower end opening of the manifold 209 via the O-ring 220.

(Pressure adjustment and temperature adjustment)
The inside of the processing chamber 201 is evacuated by the vacuum pump 246 so as to have a desired pressure (degree of vacuum). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 231a is feedback-controlled based on the measured pressure information (pressure adjustment).
.. The vacuum pump 246 is always kept in operation until at least the processing for the wafer 200 is completed. Further, the heater 20 is set so that the temperature inside the processing chamber 201 becomes a desired temperature.
Heated by 7. The heating in the processing chamber 201 by the heater 207 is continuously performed at least until the processing on the wafer 200 is completed.

Further, the boat 217 and the wafer 200 are rotated by the rotation mechanism 267. The rotation of the boat 217 and the wafer 200 by the rotation mechanism 267 is continued at least until the processing on the wafer 200 is completed.

After that, the raw material gas supply step (first gas supply step), the residual gas removal step, and the reaction gas supply step (second gas supply step) residual gas removal step are performed a predetermined number of times in this order.

(Raw material gas supply step)
The valve 314 is opened to allow the raw material gas (TMA gas) to flow to the gas supply pipe 310. The flow rate of TMA gas is adjusted by MFC312, and the processing chamber 2 is adjusted from the gas supply hole 410a of the nozzle 410.
It is supplied into 01. At the same time, the valve 514 is opened to allow the carrier gas ( _N2 gas) to flow into the gas supply pipe 510. The flow rate of the carrier gas is adjusted by the MFC 512, and the carrier gas is supplied together with the raw material gas from the supply hole 410a of the nozzle 410 into the processing chamber 201, and is supplied to the exhaust pipe 23.
Exhaust from 1. Further, in order to prevent the raw material gas from entering the nozzle 420 (preventing backflow), the valve 524 is opened and the carrier gas is allowed to flow into the gas supply pipe 520. The carrier gas is supplied to the processing chamber 201 via the gas supply pipe 520 and the nozzle 420, and is exhausted from the exhaust pipe 231.

At this time, the APC valve 243 is appropriately adjusted to reduce the pressure in the processing chamber 201, for example, 1 to 1.
The pressure is in the range of 1000 Pa, preferably 1 to 100 Pa, more preferably 10 to 50 Pa. In this specification, for example, when the numerical value is described as 1 to 1000 Pa, it means 1 Pa or more and 1000 Pa or less. That is, 1 Pa and 1000 Pa are included in the numerical range. The same applies not only to pressure but also to all numerical values described in the present specification such as flow rate, time and temperature.

The supply flow rate of TMA gas controlled by MFC312 is, for example, 10 to 2000 sccm.
The flow rate is preferably in the range of 50 to 1000 sccm, more preferably 100 to 500 sccm.

The supply flow rate of the carrier gas controlled by the MFC 512 is, for example, a flow rate within the range of 1 to 30 slm. The time for supplying the raw material gas to the wafer 200 is, for example, in the range of 1 to 60 seconds, preferably 1 to 20 seconds, and more preferably 2 to 15 seconds.

In the heater 207, the temperature of the wafer 200 is, for example, 200 to 600 ° C., preferably 35.
It is heated so as to be in the range of 0 ° C. to 550 ° C., more preferably 400 to 550 ° C.

By supplying TMA gas to the processing chamber 201 under the above-mentioned conditions, an Al-containing layer is formed on the outermost surface of the wafer 200. The Al-containing layer may contain C and H in addition to Al. Al
The containing layer is formed on the outermost surface of the wafer 200 by physical adsorption of TMA, chemical adsorption of a substance partially decomposed by TMA, thermal decomposition of TMA, and accumulation of Al. To. That is, the Al-containing layer may be an adsorption layer (physisorption layer or chemisorption layer) in which TMA or a part of TMA is decomposed, or may be an Al deposition layer (Al layer).

(Residual gas removal step)
After the Al-containing layer is formed, the valve 314 is closed and the supply of TMA gas is stopped. At this time, the APC valve 243 is left open, the processing chamber 201 is evacuated by the vacuum pump 246, and the raw material gas remaining in the processing chamber 201 after contributing to the formation of the unreacted or Al-containing layer is removed from the processing chamber 201. do. The valves 514 and 524 maintain the supply of the carrier gas to the processing chamber 201 in the open state.

(Reaction gas supply step)
After removing the residual gas in the processing chamber 201, the valve 324 is opened and the reaction gas (O3 gas) flows into the gas supply pipe ₃₂₀ . The flow rate of the reaction gas is adjusted by MFC322, and the nozzle 42
It is supplied to the wafer 200 in the processing chamber 201 from the supply hole 420a of 0, and is supplied to the exhaust pipe 231.
Is exhausted from. That is, the wafer 200 is exposed to the reaction gas.

At this time, the valve 524 is opened and the carrier gas flows into the gas supply pipe 520. The flow rate of the carrier gas is adjusted by the MFC 522, is supplied into the processing chamber 201 together with the reaction gas, and is exhausted from the exhaust pipe 231. At this time, the reaction gas is prevented from entering the nozzle 410 (
To prevent backflow), the valve 514 is opened and the carrier gas is allowed to flow into the gas supply pipe 510. The carrier gas is supplied into the processing chamber 201 via the gas supply pipe 510 and the nozzle 410, and is exhausted from the exhaust pipe 231.

At this time, the APC valve 243 is appropriately adjusted to reduce the pressure in the processing chamber 201, for example, 1 to 1.
The pressure shall be within the range of 1000 Pa. The supply flow rate of the reaction gas controlled by the MFC 322 is, for example, a flow rate within the range of 5 to 40 slm, preferably 5 to 30 slm, and more preferably 10 to 20 slm. The time for supplying the reaction gas to the wafer 200 is, for example, 1 to 6.
Within the range of 0 seconds. Other treatment conditions are the same as those of the raw material gas supply step described above.

At this time, the gas flowing in the processing chamber 201 is only the reaction gas and the inert gas ( _N2 gas). The reaction gas reacts with at least a part of the Al-containing layer formed on the wafer 200 in the raw material gas supply step. The Al-containing layer is oxidized to form an aluminum oxide layer (AlO layer) containing Al and O as a metal oxide layer. That is, the Al-containing layer is modified into an AlO layer.

(Residual gas removal step)
After the AlO layer is formed, the valve 324 is closed to stop the supply of the reaction gas. Then, by the same treatment procedure as the residual gas removal step after the raw material gas supply step, the reaction gas and reaction by-products remaining in the treatment chamber 201 after contributing to the formation of the unreacted or AlO layer are placed in the treatment chamber 201. Exclude from.

The cycle of sequentially performing the raw material gas supply step, the residual gas removal step, the reaction gas supply step, and the residual gas removal step described above is performed a predetermined number of times (one or more times). By batch processing (a plurality of steps are performed a plurality of times) in this way, an AlO film is formed on the wafer 200.

The batch process is a process in which a cycle of sequentially performing the raw material gas supply step, the residual gas removal step, the reaction gas supply step, and the residual gas removal step is performed a predetermined number of times to form an AlO film on the wafer 200. .. Then, in one batch, an AlO film is formed on the wafer 200.

(After purging and atmospheric pressure recovery)
_N2 gas is supplied into the processing chamber 201 from each of the gas supply pipes 510, 520, and 530, and is exhausted from the exhaust pipe 231. The N ₂ gas acts as a purge gas, which causes the treatment chamber 2
The inside of 01 is purged with an inert gas, and the gas and by-products remaining in the treatment chamber 201 are removed from the treatment chamber 2.
Removed from within 01 (after-purge). After that, the atmosphere in the processing chamber 201 is replaced with the inert gas (replacement of the inert gas), and the pressure in the treatment chamber 201 is restored to the normal pressure (return to atmospheric pressure).

(Wafer carry out)
After that, the seal cap 219 is lowered by the boat elevator 115, and the lower end of the manifold 209 is opened. Then, the processed wafer 200 is carried out of the reaction tube 203 from the lower end of the reaction tube 203 in a state of being supported by the boat 217. After that, the processed wafer 200 is taken out from the boat 217.

(B) Etching (Cleaning) Step Next, a step of etching the film adhering to the inside of the processing chamber 201 or the like will be described.

(Boat delivery)
The boat 217 is carried into the processing chamber 201 without loading the wafer 200. The boat 217 is lifted by the boat elevator 115 and carried into the processing chamber 201. In this state, the seal cap 219 is in a state of closing the lower end opening of the manifold 209 via the O-ring 220.

(Pressure adjustment and temperature adjustment)
The inside of the processing chamber 201 is evacuated by the vacuum pump 246 so as to have a desired pressure. At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 231a is feedback-controlled based on the measured pressure information (pressure adjustment). The vacuum pump 246 is always kept in operation until at least the etching process is completed. Further, the inside of the processing chamber 201 is heated by the heater 207 so as to have a desired temperature. The heating in the processing chamber 201 by the heater 207 is continuously performed at least until the etching process is completed.

(Etching (cleaning) step)
The step of cleaning the inside of the processing chamber 201 by etching the film adhering to the inside of the processing chamber 201 or the like is executed.

In this step, in the raw material container 600, SiCl ₄ as a liquid raw material is preheated to a predetermined temperature (for example, 100 ° C.). By opening the valve 334, the vaporized gas of SiCl ₄ is generated in the raw material container 600, and the generated SiCl ₄ gas is flowed into the gas supply pipe 330 as a cleaning gas (etching gas). The flow rate of the SiCl ₄ gas is adjusted by the MFC 332, is supplied into the processing chamber 201 from the gas supply hole 430a of the nozzle 430, and is exhausted from the exhaust pipe 231. At the same time, the valve 534 is opened to allow an inert gas such as _N2 gas to flow into the gas supply pipe 530. The flow rate of the N ₂ gas flowing in the gas supply pipe 530 is adjusted by the MFC 532, is supplied into the processing chamber 201 together with the SiC ₄ gas, and is exhausted from the exhaust pipe 231. At this time, in order to prevent the _SiCl4 gas from entering the nozzles 410 and 420, the valves 514 and 524 are opened to allow _N2 gas to flow into the gas supply pipes 510 and 520. The N ₂ gas is supplied into the processing chamber 201 via the gas supply pipes 310, 320 nozzles 410 and 420, and is exhausted from the exhaust pipe 231.

At least a part of the AlO film adhering to the inside of the treatment chamber 201 and S by supplying SiCl ₄ gas.
It reacts with the iCl ₄ gas and is removed from the processing chamber 201.

At this time, the heater 207 is controlled by the controller 121 to heat the inside of the processing chamber 201 to a predetermined temperature in the range of, for example, 200 to 800 ° C., preferably 400 to 650 ° C. to activate the _SiCl4 gas. To make it. Further, at this time, the APC valve 231a is closed or substantially closed to the extent that the treatment is not affected, and the _SiCl4 gas is contained in the treatment chamber 201. Then, the pressure in the processing chamber 201 is maintained at a first pressure, for example, 1 to 40,000 Pa, preferably 10,000 to 30,000 Pa, and more preferably 20,000 to 30,000 Pa. The supply flow rate of the SiCl ₄ gas controlled by the MFC 332 is, for example, 0.1 to 10 slm, preferably a flow rate within the range of 3 to 5 slm. The time for supplying SiC ₄ gas to the processing chamber 201 (SiCl ₄ gas supply time) is, for example, a time within the range of 60 to 600 seconds.

(Residual gas removal step)
After supplying SiCl ₄ gas to the processing chamber 201 for a predetermined time, the valve 334 is closed and Si is used.
Stop the supply of Cl ₄ gas. The APC valve 231a is closed, or if it is substantially closed to the extent that it does not affect the process, the APC valve 231a is opened. Then, by the same treatment procedure as the residual gas removal step of the TMA gas supply step, the SiCl ₄ gas remaining in the treatment chamber 201 after contributing to the removal of the unreacted or AlO layer is removed from the treatment chamber 201.

(Surface oxidation step)
The valve ₃₂₄ is opened to allow O3 gas to flow into the gas supply pipe 320. O3 gas is _MFC32
The flow rate is adjusted by 2, the gas is supplied into the processing chamber 201 from the gas supply hole 420a of the nozzle 420, and is exhausted from the exhaust pipe 231. At this time, the valve 524 is opened at the same time, and the gas supply pipe 52
An inert gas such as N ₂ gas is allowed to flow in 0. The _N2 gas that has flowed through the gas supply pipe 520 is MFC.
The flow rate is adjusted by 522 and supplied into the processing chamber 201 together with the O3 gas _, and the exhaust pipe 231 is used.
Is exhausted from. At this time, in order to prevent the intrusion of O3 gas into the nozzles 410 and 430 _, the valves 514 and 534 are opened to allow _N2 gas to flow into the gas supply pipes 510 and 530. The N ₂ gas is processed in the processing chamber 201 via the gas supply pipes 310, 330 and the nozzles 410, 430.
It is supplied to the inside and exhausted from the exhaust pipe 231.

When flowing O3 gas _, the APC valve 231a is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, a pressure in the range of 50 to 1330 Pa. The supply flow rate of the O3 gas controlled by the MFC 235b and 235c is _, for example, a flow rate within the range of 5 to 40 slm. The time for exposing the inner wall of the treatment chamber 201 to the O3 gas _, that is, the gas supply time (irradiation time) is, for example, a time within the range of 10 to 600 seconds. The temperature of the heater unit 207 at this time is the same as that of step S101.

The supply of _O3 gas oxidizes the inner wall of the processing chamber 201 and the surface of the boat 217 and the like. Also, the by-products produced in the etching step are reoxidized. For example, the Al—Cl bond of AlClx is cleaved, removed as Cl ₂ , and reoxidized to AlO. Further _, the organic matter remaining in the AlO film reacts with the O3 gas and is removed from the treatment chamber 201. For example, the carbon (C) remaining in the AlO film reacts with the O3 gas to become COx _, which is removed from the treatment chamber 201. At this time, on the outermost surface of the film, carbon defects are present after COx is desorbed, and a weak bond equilibrium state of Al—O and Al—Al is present. This state is considered to be a surface equilibrium state suitable for etching.

(Residual gas removal step)
After supplying O3 gas for a predetermined time _, the valve ₃₂₄ is closed and the supply of O3 gas is stopped. Then, by the same treatment procedure as the residual gas removal step of the TMA gas supply step _, the unreacted O3 gas remaining in the treatment chamber 201 or after reacting with the AlO membrane is removed from the treatment chamber 201.

(Implemented a predetermined number of times)
By performing the cycle of performing the above steps in order one or more times (predetermined number of times (m times)),
The AlO film adhering to the treatment chamber 201 is removed. The above cycle is preferably repeated multiple times.

In the above-described embodiment, the AlO film is exemplified as the high dielectric constant oxide film to be etched, but the present invention is not limited to this. It is also applicable when TixOy and TaxOy (x and y are integers or decimals larger than 0) are used. That is, it can be applied to a zirconium oxide film, a hafnium oxide film, a titanium oxide film, a tantalum oxide film, and a composite film thereof.

Further, in the above-described embodiment, TMA, which is an organic Al raw material, is exemplified as the raw material gas, but the present invention is not limited to this, and gas obtained from other liquid raw materials can also be applied. For example, organic Hf raw materials such as tetrakisethylmethylaminohafnium (Hf [N (CH ₃ ) CH ₂ CH ₃ ] ₄ , TEMAH), trisdimethylaminosilane (SiH (N (CH ₃ ) ₂ ) ₃ , TDMAS) and the like. Organic Si raw material, organic Ti raw material such as tetrakis dimethylaminotitanium (Ti [N (CH ₃ ) ₂ ] ₄ , TDMAT), pentakis dimethylaminotantalum (Ta (N (CH ₃ ) ₂ ) ₅ , PDMAT), etc. Gas obtained from a liquid raw material such as the organic Ta raw material of the above can also be applied.

Further, in the above-described embodiment _, an example in which O3 gas is used in the film forming step is shown, but the present invention is not limited to this, and other raw materials can be applied as long as they are oxygen-containing gas. For example, O ₂ , O ₂
Plasma, H ₂ O, H ₂ O ₂ , N ₂ O and the like can also be applied.

Further, in the above _- described embodiment, O3 is exemplified as the oxidation gas used in the surface oxidation step, but the present invention is not limited to this, and is an oxygen-containing gas and an element that reacts with the halogen element contained in the etching gas. As long as it is a gas containing the above, other gas may be used. For example, H ₂ O, H ₂ O ₂ , and the like can also be used.

The process recipe (program that describes the treatment procedure, treatment conditions, etc.) used for forming these various thin films includes the contents of substrate treatment, cleaning treatment, etc. (film type, composition ratio, film quality, film thickness, etc. of the thin film to be formed). It is preferable to prepare each individually (multiple preparations are made) according to the treatment procedure, treatment conditions, etc.). Then, when starting the board treatment, cleaning treatment, etc., an appropriate process recipe, cleaning recipe, etc. should be appropriately selected from a plurality of process recipes, cleaning recipes, etc. according to the contents of the board treatment, cleaning treatment, etc. Is preferable.
Specifically, a recording medium (external storage) in which a plurality of process recipes, cleaning recipes, etc. individually prepared according to the contents of substrate processing, cleaning processing, etc. are recorded on a telecommunication line, the process recipe, cleaning recipes, etc. It is preferable to store (install) in advance in the storage device 121c provided in the board processing device via the device 123). Then, when the substrate processing is started, the CPU 121a included in the substrate processing apparatus selects an appropriate process recipe from among a plurality of process recipes, cleaning recipes, etc. stored in the storage device 121c according to the content of the substrate processing. It is preferable to appropriately select a cleaning recipe or the like. With this configuration, it becomes possible to form thin films of various film types, composition ratios, film qualities, and film thicknesses with a single substrate processing device in a versatile and reproducible manner. In addition, the operator's operation load (input load such as processing procedure and processing conditions) can be reduced, and the board processing can be started quickly while avoiding operation mistakes.

Further, the present disclosure can also be realized by changing, for example, a process recipe, a cleaning recipe, or the like of an existing substrate processing apparatus. When changing the process recipe, cleaning recipe, etc., install the process recipe, cleaning recipe, etc. related to this disclosure on the existing board processing device via the telecommunications line or the recording medium on which the process recipe, cleaning recipe, etc. are recorded. Alternatively, it is also possible to operate the input / output device of the existing board processing device and change the process recipe, cleaning recipe, etc. itself to the process recipe, cleaning recipe, etc. according to the present disclosure.

<Other Embodiment 1 of the present disclosure>
In the vaporizer according to the above-described embodiment, as shown in FIG. 4, the first temperature sensor 630 and the second temperature sensor 640 are located at the same height in the vicinity of the bottom surface of the raw material container 600, respectively. Have been placed. However, as shown in FIG. 7, the first temperature sensor 630'and the second temperature sensor 640' may be arranged so as to be located at different heights from each other. Specifically, the first temperature sensor 630'is arranged in the vicinity of the liquid surface where a large amount of heat is locally taken away by the vaporization of the liquid raw material, and the second temperature sensor 640'is the same as the above-described embodiment. In addition, it can be arranged near the bottom surface of the raw material container 600. (Therefore, the first temperature sensor 630'is located above the second temperature sensor 640'.)

It is desirable that the first temperature sensor 630'is arranged at a position as close to the liquid level as possible, but since the liquid level fluctuates depending on the operation of the vaporizer, it is desirable to be arranged at least above the internal heater 610. .. In the present embodiment, the internal heater 610 is always arranged below the liquid level of the liquid raw material (so that the entire internal heater 610 is immersed in the liquid raw material). It is desirable that the height of the liquid level is controlled by the controller 121 so that the internal heater 610 is always located below the liquid level of the liquid raw material.

By arranging the first temperature sensor 630'in this way, the temperature near the liquid surface of the liquid raw material whose temperature has dropped locally due to vaporization is quickly (with good responsiveness) recovered to the desired temperature by the internal heater 610. Can be made to.

It is desirable that the first temperature sensor 630'is always located below the liquid surface (that is, always immersed in the liquid raw material). Therefore, although the liquid level fluctuates due to the vaporization or replenishment of the liquid raw material, it is desirable that the first temperature sensor 630'is arranged so as to be located below the operating range of the liquid level height. For example, the controller 121 monitors the liquid level position detected by the liquid level detection sensor 660 so that the height of the liquid level is within a predetermined operation range set above the first temperature sensor 630'. , The supply of the liquid raw material into the raw material container 600 can be controlled. Further, for example, when the controller 121 detects that the liquid level is lower than the predetermined operation range, the controller 121 may control the input / output device 122 to notify the operator or the like by displaying a screen or issuing an alarm. Alternatively, the power supply to the internal heater 610 and the external heater 620 may be stopped. Therefore, at least the height position of the first temperature sensor 630'is operated so as to always be located below this predetermined operating range.

<Other Embodiment 2 of the present disclosure>
In the vaporizer according to the above-described embodiment, the first temperature sensor 630 used to control the internal heater 610 and the second temperature sensor 640 used to control the external heater 620 are individually provided. There is. However, as shown in FIG. 8, the internal heater 610 and the external heater 620 may be controlled based on the temperature measured by the third temperature sensor 670, which is one common temperature sensor. More specifically, the controller 121 may control both the internal heater 610 and the external heater 620 so that the temperature measured by the third temperature sensor 670 becomes a predetermined temperature. According to the present embodiment, the temperature of the liquid raw material can be controlled to a predetermined value by a simpler configuration than that of the above-described embodiment.

Further, as still another embodiment, as shown in FIG. 9, a fourth temperature sensor 680 for detecting a heating abnormality may be further provided. When the temperature measured by the fourth temperature sensor 680 exceeds a predetermined threshold value, the controller 121 stops the power supply to the internal heater 610 and the external heater 620. By providing the fourth temperature sensor 680 in this way, even if an abnormality occurs in the third temperature sensor 670 and the liquid raw material is excessively heated by the internal heater 610 and the external heater 620, the internal heater is used. The 610 and the external heater 620 can be safely stopped. Therefore, it is possible to prevent excessive heating of the liquid raw material and damage to the heater.

10 ... Board processing device, 121 ... Controller, 200 ... Wafer (board), 201
... Processing chamber, 600 ... Raw material container, 610 ... Internal heater, 620 ... External heater, 630 ... First
Temperature sensor, 640 ... Second temperature sensor

Claims (17)

A raw material container for storing liquid raw materials and
A first heating unit that is immersed in the liquid raw material stored in the raw material container to heat the liquid raw material, and a first heating unit.
A second heating unit that heats the raw material container,
A first temperature sensor that is immersed in the liquid raw material stored in the raw material container and measures the temperature of the liquid raw material, and
A second temperature sensor that is immersed in the liquid raw material stored in the raw material container and measures the temperature of the liquid raw material, and
It is configured to control the first heating unit based on the temperature measured by the first temperature sensor and to control the second heating unit based on the temperature measured by the second temperature sensor. Control unit and
Vaporizer with. The control unit
The first heating unit is controlled so that the temperature measured by the first temperature sensor becomes a predetermined first temperature, and the temperature measured by the second temperature sensor becomes a predetermined second temperature. The vaporizer according to claim 1, which is configured to control the second heating unit so as to be. The vaporizer according to claim 2, wherein the first temperature and the second temperature are equal to each other. The vaporization device according to claim 1, wherein the first temperature sensor and the second temperature sensor are arranged so as to be located at the same height in the vicinity of the bottom surface of the raw material container. The vaporization device according to claim 4, wherein the first temperature sensor and the second temperature sensor are arranged at a position lower than the first heating unit. The vaporization device according to claim 1, wherein the first temperature sensor is arranged at a position where the distance from the first heating unit and the distance from the second heating unit are equal. The vaporization device according to claim 1 or 6, wherein the second temperature sensor is arranged at a position where the distance from the first heating unit and the distance from the second heating unit are equal. The vaporization device according to claim 1, wherein the first temperature sensor and the second temperature sensor are arranged at different heights from each other. The vaporizer according to claim 8, wherein the first temperature sensor is arranged at a position higher than that of the second temperature sensor. The vaporization device according to claim 8 or 9, wherein the first temperature sensor is arranged at a position higher than the first heating unit. The vaporization device according to claim 10, wherein the second temperature sensor is arranged at a position lower than that of the first heating unit. Further, a liquid level detection sensor for detecting the height of the liquid level of the liquid raw material in the raw material container is provided.
When the control unit detects that the position of the liquid level detected by the liquid level detection sensor is lower than the predetermined liquid level range set above the first temperature sensor, the control unit said. The vaporizer according to claim 1, wherein the heating by the first heating unit and the second heating unit is stopped. Further, a liquid level detection sensor for detecting the height of the liquid level of the liquid raw material in the raw material container is provided.
When the control unit detects that the position of the liquid level detected by the liquid level detection sensor is lower than the predetermined liquid level range set above the first temperature sensor, the control unit is turned on. The vaporization device according to claim 1, wherein the output device is controlled to perform notification. A processing room for processing the substrate and
A raw material container for storing a liquid raw material, a first heating unit immersed in the liquid raw material stored in the raw material container to heat the liquid raw material, a second heating unit for heating the raw material container, and the above. A vaporizer provided with a first temperature sensor immersed in a liquid raw material and measuring the temperature of the liquid raw material, and a second temperature sensor immersed in the liquid raw material and measuring the temperature of the liquid raw material.
A control unit configured to control the first heating unit based on the temperature measured by the first temperature sensor and control the second heating unit based on the temperature measured by the second temperature sensor. When,
A gas supply system that supplies the gas obtained by vaporizing the liquid raw material with the vaporizer to the processing chamber, and the gas supply system.
Substrate processing equipment with. A raw material container for storing a liquid raw material, a first heating unit immersed in the liquid raw material stored in the raw material container to heat the liquid raw material, a second heating unit for heating the raw material container, and the above. A first temperature sensor is immersed in the liquid raw material stored in the raw material container to measure the temperature of the liquid raw material, and the liquid raw material is immersed in the liquid raw material stored in the raw material container to measure the temperature of the liquid raw material. Using a vaporizer equipped with a second temperature sensor,
By controlling the first heating unit based on the temperature measured by the first temperature sensor and controlling the second heating unit based on the temperature measured by the second temperature sensor. The step of vaporizing the liquid raw material and
A step of cleaning the processing chamber by supplying the gas obtained by vaporizing the liquid raw material to the processing chamber in which the substrate is processed.
Cleaning method with. The process of bringing the board into the processing chamber and
The process of processing the substrate in the processing chamber and
A raw material container for storing a liquid raw material, a first heating unit immersed in the liquid raw material stored in the raw material container to heat the liquid raw material, a second heating unit for heating the raw material container, and the above. A first temperature sensor is immersed in the liquid raw material stored in the raw material container to measure the temperature of the liquid raw material, and the liquid raw material is immersed in the liquid raw material stored in the raw material container to measure the temperature of the liquid raw material. Using a vaporizer equipped with a second temperature sensor,
By controlling the first heating unit based on the temperature measured by the first temperature sensor and controlling the second heating unit based on the temperature measured by the second temperature sensor. The step of vaporizing the liquid raw material and
A step of cleaning the processing chamber by supplying the gas obtained by vaporizing the liquid raw material to the processing chamber.
A method for manufacturing a semiconductor device having. The procedure for bringing the board into the processing room of the board processing device and
The procedure for processing the substrate in the processing chamber and
A raw material container for storing a liquid raw material, a first heating unit immersed in the liquid raw material stored in the raw material container to heat the liquid raw material, a second heating unit for heating the raw material container, and the above. A first temperature sensor is immersed in the liquid raw material stored in the raw material container to measure the temperature of the liquid raw material, and the liquid raw material is immersed in the liquid raw material stored in the raw material container to measure the temperature of the liquid raw material. Using a vaporizer equipped with a second temperature sensor,
The liquid is controlled by controlling the first heating unit based on the temperature measured by the first temperature sensor and controlling the second heating unit based on the temperature measured by the second temperature sensor. The procedure for vaporizing the raw materials and
A procedure for cleaning the treatment chamber by supplying the gas obtained by vaporizing the liquid raw material to the treatment chamber.
A program that causes the board processing apparatus to execute the above.

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