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JP2021095622A - Gas supply method, substrate treatment method, and gas supply device - Google Patents

Gas supply method, substrate treatment method, and gas supply device Download PDF

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JP2021095622A
JP2021095622A JP2019229423A JP2019229423A JP2021095622A JP 2021095622 A JP2021095622 A JP 2021095622A JP 2019229423 A JP2019229423 A JP 2019229423A JP 2019229423 A JP2019229423 A JP 2019229423A JP 2021095622 A JP2021095622 A JP 2021095622A
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gas
supply
flow rate
supplied
mixed
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陽介 池田
Yosuke Ikeda
陽介 池田
俊二 山口
Shunji Yamaguchi
俊二 山口
卓也 石松
Takuya Ishimatsu
卓也 石松
亨明 峰原
Komei MINEHARA
亨明 峰原
健太 深井
Kenta FUKAI
健太 深井
拓矢 吉田
Takuya Yoshida
拓矢 吉田
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Shinwa Controls Co Ltd
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Shinwa Controls Co Ltd
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Priority to JP2019229423A priority Critical patent/JP2021095622A/en
Priority to TW109145275A priority patent/TW202135923A/en
Priority to CN202080081308.7A priority patent/CN114730705A/en
Priority to PCT/JP2020/047777 priority patent/WO2021125358A1/en
Priority to KR1020227018848A priority patent/KR20220116160A/en
Publication of JP2021095622A publication Critical patent/JP2021095622A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

To clean and remove effectively.SOLUTION: A first supply step (cleaning, removal) is performed, in which first gas is mixed with second gas as carrier gas for the second gas generated by evaporating a material, and mixed gas of the first gas and the second gas is supplied to a treatment object such as a substrate. Then, a second supply step (evaporation, drying) is performed, in which heated first gas is supplied to the treatment object. Hereby, cleaning and removal of a foreign matter on the treatment object can be performed effectively.SELECTED DRAWING: Figure 2

Description

本発明は、ガス供給方法、基板処理方法及びガス供給装置に関する。 The present invention relates to a gas supply method, a substrate processing method, and a gas supply device.

半導体製造プロセスでは種々の処理でガスが利用される。例えば成膜処理では、一般に材料ガスとキャリアガスとの混合ガスが利用される。また、異物の洗浄及び除去処理でも材料ガスとキャリアガスとの混合ガスが利用されることがある。 Gas is used in various processes in the semiconductor manufacturing process. For example, in the film forming process, a mixed gas of a material gas and a carrier gas is generally used. In addition, a mixed gas of a material gas and a carrier gas may be used for cleaning and removing foreign substances.

ガスを供給する装置としては従来から種々のものが提案されており、例えば特許文献１は成膜処理で利用される混合ガスの供給装置を開示し、特許文献２は除去処理で利用される混合ガスの供給装置を開示する。 Various devices have been conventionally proposed for supplying gas. For example, Patent Document 1 discloses a mixed gas supply device used in a film forming process, and Patent Document 2 discloses a mixing device used in a removal process. Disclose the gas supply device.

特開２０１９−９２１０号公報Japanese Unexamined Patent Publication No. 2019-9210 特開２０１３−１４５８８７号公報Japanese Unexamined Patent Publication No. 2013-145878

近年、半導体の回路パターンの微細化が進みつつあるが、回路パターンは微細であるほど、ウェット洗浄時における倒壊リスクが高まる。一方で、ドライ洗浄を行った場合には倒壊リスクは低減され得るが、ガスの反応生成物が生じやすくなる。そのため、近年の微細化に適した効果的な処理方式が求められている。 In recent years, the circuit pattern of semiconductors has been miniaturized, and the finer the circuit pattern, the higher the risk of collapse during wet cleaning. On the other hand, when dry cleaning is performed, the risk of collapse can be reduced, but gas reaction products are likely to be generated. Therefore, an effective processing method suitable for miniaturization in recent years is required.

また、上述したように半導体製造プロセスでは種々の処理でガスが利用されるが、一般的な半導体製造設備では、ガスを利用する複数の処理毎に専用のガス供給装置が用意される。しかしながら、この態様は半導体製造設備のサイズの増大や製造コストの増大を招いている虞がある。このような問題に鑑みると、設備サイズや製造コストの抑制を図り得るガス供給手法の実現は有益である。 Further, as described above, gas is used in various processes in the semiconductor manufacturing process, but in a general semiconductor manufacturing facility, a dedicated gas supply device is prepared for each of a plurality of processes using gas. However, this aspect may lead to an increase in the size of the semiconductor manufacturing equipment and an increase in the manufacturing cost. In view of these problems, it is beneficial to realize a gas supply method that can control the equipment size and manufacturing cost.

本発明は上記事情に着目してなされたものであり、洗浄及び除去を効果的に行うことができるガス供給方法、基板処理方法及びガス供給装置を提供することを目的とする。 The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a gas supply method, a substrate processing method, and a gas supply device capable of effectively performing cleaning and removal.

本発明の一実施の形態にかかるガス供給方法は、第１ガスを、材料を気化させることにより生成される第２ガスのキャリアガスとして前記第２ガスと混合させ、前記第１ガスと前記第２ガスとの混合ガスを処理対象に供給する第１供給工程と、加熱した前記第１ガスを、前記処理対象に供給する第２供給工程と、を備える。 In the gas supply method according to the embodiment of the present invention, the first gas is mixed with the second gas as a carrier gas of the second gas generated by vaporizing the material, and the first gas and the first gas are mixed. It includes a first supply step of supplying a mixed gas with the two gases to the treatment target, and a second supply step of supplying the heated first gas to the treatment target.

また、本発明の一実施の形態にかかる基板処理方法は、第１ガスを、材料を気化させることにより生成される第２ガスのキャリアガスとして前記第２ガスと混合させ、前記第１ガスと前記第２ガスとの混合ガスを基板に供給する第１供給工程と、加熱した前記第１ガスを、前記基板に供給する第２供給工程と、を備える。 Further, in the substrate processing method according to the embodiment of the present invention, the first gas is mixed with the second gas as a carrier gas of the second gas generated by vaporizing the material, and the first gas is combined with the first gas. It includes a first supply step of supplying a mixed gas with the second gas to the substrate, and a second supply step of supplying the heated first gas to the substrate.

また、本発明の一実施の形態にかかるガス供給装置は、第１ガスを貯留する第１ガス貯留部と、材料を気化させることにより第２ガスを生成する気化器を有し、前記第１ガス貯留部から供給される前記第１ガスを前記第２ガスのキャリアガスとして前記第２ガスと混合させ、前記第１ガスと前記第２ガスとの混合ガスを流出させる第１供給部と、前記第１ガス貯留部から供給される前記第１ガスを加熱して流出させる第２供給部と、を備える。 Further, the gas supply device according to the embodiment of the present invention has a first gas storage unit for storing the first gas and a vaporizer for generating a second gas by vaporizing the material. A first supply unit that mixes the first gas supplied from the gas storage unit with the second gas as a carrier gas of the second gas and causes a mixed gas of the first gas and the second gas to flow out. A second supply unit for heating and flowing out the first gas supplied from the first gas storage unit is provided.

本発明によれば、洗浄及び除去を効果的に行うことができる。 According to the present invention, cleaning and removal can be effectively performed.

本発明の一実施の形態にかかるガス供給装置の概略構成を示す図である。It is a figure which shows the schematic structure of the gas supply device which concerns on one Embodiment of this invention. 図１に示すガス供給装置の動作の一例を説明するグラフを示す図である。It is a figure which shows the graph explaining an example of the operation of the gas supply apparatus shown in FIG. 図１に示すガス供給装置の動作の他の例を説明するグラフを示す図である。It is a figure which shows the graph explaining another example of the operation of the gas supply apparatus shown in FIG. 図１に示すガス供給装置の変形例を示す図である。It is a figure which shows the modification of the gas supply device shown in FIG. 図１に示すガス供給装置の変形例を示す図である。It is a figure which shows the modification of the gas supply device shown in FIG.

以下、本発明の一実施の形態について説明する。図１は一実施の形態にかかるガス供給装置１の概略構成を示す図である。 Hereinafter, an embodiment of the present invention will be described. FIG. 1 is a diagram showing a schematic configuration of a gas supply device 1 according to an embodiment.

図１に示すガス供給装置１は、第１ガスを貯留する第１ガス貯留部２と、それぞれが第１ガス貯留部２に接続される第１供給部１０、第２供給部２０及び第３供給部３０と、これら供給部１０，２０，３０のうちのいずれかが流出させるガスを処理対象（供給対象）に供給する切り換え部４と、超純水を第１供給部１０に供給する超純水供給部６と、ガス供給装置１の動作を制御するコントローラ８と、を備えている。 The gas supply device 1 shown in FIG. 1 includes a first gas storage unit 2 for storing the first gas, and a first supply unit 10, a second supply unit 20, and a third supply unit 10, each of which is connected to the first gas storage unit 2. The supply unit 30, the switching unit 4 that supplies the gas discharged by any of the supply units 10, 20, and 30 to the processing target (supply target), and the ultrapure water that supplies ultrapure water to the first supply unit 10. It includes a pure water supply unit 6 and a controller 8 that controls the operation of the gas supply device 1.

第１ガス貯留部２は、第１ガスの例としての窒素ガス（Ｎ２ガス）を貯留し、窒素ガスを、第１供給部１０、第２供給部２０及び第３供給部３０に対して供給可能となっている。本実施の形態における第１供給部１０は、超純水供給部６から供給される超純水を気化させることにより第２ガスとしての水蒸気を生成し、この水蒸気のキャリアガスとして第１ガス貯留部２から窒素ガスを受け入れ、窒素ガスと水蒸気との混合ガスを処理対象上に存在する異物の除去及び洗浄のために処理対象に供給する。一方、第２供給部２０は、第１供給部１０が上記混合ガスを処理対象へ供給した後、同処理対象に加熱した窒素ガスを供給することにより、処理対象上に存在する水分を蒸発又は乾燥させるようになっている。 First gas reservoir 2, the nitrogen gas as an example of the first gas (N 2 gas) were pooled, the nitrogen gas, the first supply portion 10, the second supply unit 20 and the third supply unit 30 It can be supplied. The first supply unit 10 in the present embodiment generates steam as a second gas by vaporizing the ultrapure water supplied from the ultrapure water supply unit 6, and stores the first gas as a carrier gas of the steam. Nitrogen gas is received from Part 2 and a mixed gas of nitrogen gas and water vapor is supplied to the treatment target for removal and cleaning of foreign substances existing on the treatment target. On the other hand, the second supply unit 20 evaporates or evaporates the water existing on the treatment target by supplying the heated nitrogen gas to the treatment target after the first supply unit 10 supplies the mixed gas to the treatment target. It is designed to be dried.

すなわち、本実施の形態における第１ガスは、キャリアガスとして機能し得る特性と、水分を蒸発又は乾燥可能な程度にまでガス状態のまま加熱可能な特性と、を有するものである。本実施の形態における第１ガスは、これらの特性を有するものであれば特に限定されるものでなく、例えばアンモニアガス（ＮＨ３ガス）やアルゴンガス（Ａｒガス）等の希ガスであってもよい。なお、第１ガスは処理対象上での酸化物の生成を抑制するべく不活性ガスであることが望ましい。 That is, the first gas in the present embodiment has a property of being able to function as a carrier gas and a property of being able to heat water in a gas state to the extent that it can be evaporated or dried. First gas in the present embodiment, as long as it has these properties not limited in particular, be a rare gas such as for example ammonia gas (NH 3 gas), argon gas (Ar gas) Good. The first gas is preferably an inert gas in order to suppress the formation of oxides on the treatment target.

第１供給部１０は、材料としての超純水を貯留し且つ貯留された超純水を気化させることにより水蒸気（第２ガス）を生成する気化器１１と、気化器１１と第１ガス貯留部２とを接続する上流第１流路１２と、気化器１１と切り換え部４とを接続する下流第１流路１３と、を有している。 The first supply unit 10 stores the ultrapure water as a material and vaporizes the stored ultrapure water to generate water vapor (second gas), and the vaporizer 11 and the first gas storage unit 10. It has an upstream first flow path 12 that connects the unit 2 and a downstream first flow path 13 that connects the vaporizer 11 and the switching unit 4.

気化器１１は、上流第１流路１２を介して第１ガス貯留部２から供給される窒素ガスを、超純水を気化させた水蒸気のキャリアガスとして水蒸気と混合させ、窒素ガスと水蒸気との混合ガスを下流第１流路１３へ流出させる。気化器１１は、タンク１１Ａと、タンク１１Ａ内に配置された気化用ヒータ１１Ｂと、温度調節用ヒータ１１Ｃと、を有しており、気化用ヒータ１１Ｂはタンク１１Ａに貯留された超純水に浸漬されるように配置され、温度調節用ヒータ１１Ｃはタンク１１Ａに貯留された超純水の液面の上方に配置されている。 The vaporizer 11 mixes nitrogen gas supplied from the first gas storage unit 2 via the upstream first flow path 12 with steam as a carrier gas of steam vaporized from ultrapure water, and mixes the nitrogen gas with steam. The mixed gas of No. 1 is discharged to the downstream first flow path 13. The vaporizer 11 has a tank 11A, a vaporization heater 11B arranged in the tank 11A, and a temperature control heater 11C, and the vaporizer 11B is made of ultrapure water stored in the tank 11A. The temperature control heater 11C is arranged so as to be immersed, and is arranged above the liquid level of the ultrapure water stored in the tank 11A.

タンク１１Ａ内に貯留される超純水は超純水供給部６から供給されるようになっており、超純水供給部６は、例えば図示しない液位センサによって超純水の液面の高さが所定の高さ未満であることが検出された場合に、タンク１１Ａに超純水を供給し、液位センサによって超純水の液面の高さが所定の高さ以上になったことが検出された場合に、超純水の供給を停止する。これにより、タンク１１Ａに貯留された超純水の液面の高さが所定の高さ以上にならならないように制御され、所定の高さよりも上方に配置される上述した温度調節用ヒータ１１Ｃが超純水に浸漬されなくなる。 The ultrapure water stored in the tank 11A is supplied from the ultrapure water supply unit 6, and the ultrapure water supply unit 6 uses, for example, a liquid level sensor (not shown) to raise the liquid level of the ultrapure water. When it was detected that the height was less than the predetermined height, the ultrapure water was supplied to the tank 11A, and the height of the liquid level of the ultrapure water became higher than the predetermined height by the liquid level sensor. When is detected, the supply of ultrapure water is stopped. As a result, the height of the liquid level of the ultrapure water stored in the tank 11A is controlled so as not to exceed a predetermined height, and the temperature control heater 11C described above is arranged above the predetermined height. It will not be immersed in ultrapure water.

上流第１流路１２は、タンク１１Ａの上部側に接続され、タンク１１Ａ内に貯留された超純水の液面よりも上方の位置でタンク１１Ａ内に窒素ガスを供給する。上流第１流路１２は、上流側第１流量調節弁１２Ａと、その下流側に配置される第１流量センサ１２Ｂとを有し、上流側第１流量調節弁１２Ａ及び第１流量センサ１２Ｂは、コントローラ８に電気的に接続されている。 The upstream first flow path 12 is connected to the upper side of the tank 11A and supplies nitrogen gas into the tank 11A at a position above the liquid level of the ultrapure water stored in the tank 11A. The upstream first flow rate control valve 12 has an upstream side first flow rate control valve 12A and a first flow rate sensor 12B arranged on the downstream side thereof, and the upstream side first flow rate control valve 12A and the first flow rate sensor 12B have. , Electrically connected to the controller 8.

第１流量センサ１２Ｂは、第１ガス貯留部２から気化器１１に向かう窒素ガスの流量を検出し、その検出結果をコントローラ８に送る。上流側第１流量調節弁１２Ａは、第１流量センサ１２Ｂが検出する流量が目標の流量になるようにその開度をコントローラ８によって制御される。 The first flow rate sensor 12B detects the flow rate of nitrogen gas from the first gas storage unit 2 toward the vaporizer 11, and sends the detection result to the controller 8. The opening degree of the upstream first flow rate control valve 12A is controlled by the controller 8 so that the flow rate detected by the first flow rate sensor 12B becomes the target flow rate.

下流第１流路１３は、下流側第１流量調節弁１３Ａと、その下流側に配置される例えばエアオペレート弁や電磁弁である第１開閉弁１３Ｂと、これら下流側第１流量調節弁１３Ａと第１開閉弁１３Ｂとの間に配置される下流側流量センサ１３Ｃと、下流側第１流量調節弁１３Ａの上流側に配置される温度センサ１３Ｄ及び湿度センサ１３Ｅと、を有している。これら各弁１３Ａ、１３Ｂ及び各センサ１３Ｃ〜１３Ｅは、コントローラ８に電気的に接続されている。 The downstream first flow path 13 includes a downstream first flow rate control valve 13A, a first on-off valve 13B which is an air operated valve or a solenoid valve arranged on the downstream side thereof, and a downstream first flow rate control valve 13A. It has a downstream flow rate sensor 13C arranged between the first on-off valve 13B and a temperature sensor 13D and a humidity sensor 13E arranged on the upstream side of the downstream first flow rate control valve 13A. The valves 13A and 13B and the sensors 13C to 13E are electrically connected to the controller 8.

第１供給部１０から切り換え部４を介して処理対象に混合ガスを供給する場合、第１開閉弁１３Ｂはコントローラ８によって閉状態から開状態に切り換えられ、第１供給部１０から処理対象に混合ガスを供給しない場合には閉状態となる。 When the mixed gas is supplied from the first supply unit 10 to the processing target via the switching unit 4, the first on-off valve 13B is switched from the closed state to the open state by the controller 8 and mixed with the processing target from the first supply unit 10. If no gas is supplied, it will be closed.

下流側流量センサ１３Ｃは、混合ガスを処理対象に供給する場合において気化器１１から切り換え部４に向かう混合ガスの流量を検出し、その検出結果をコントローラ８に送る。下流側第１流量調節弁１３Ａは、下流側流量センサ１３Ｃが検出する流量が目標の流量になるようにその開度をコントローラ８によって制御される。 The downstream flow rate sensor 13C detects the flow rate of the mixed gas from the vaporizer 11 to the switching unit 4 when supplying the mixed gas to the processing target, and sends the detection result to the controller 8. The opening degree of the downstream first flow rate control valve 13A is controlled by the controller 8 so that the flow rate detected by the downstream flow rate sensor 13C becomes the target flow rate.

また、温度センサ１３Ｄは、混合ガスを処理対象に供給する場合において気化器１１から切り換え部４に向かう混合ガスの温度を検出し、その検出結果をコントローラ８に送る。湿度センサ１３Ｅは、混合ガスを処理対象に供給する場合において気化器１１から切り換え部４に向かう混合ガスの湿度を検出し、その検出結果をコントローラ８に送る。 Further, the temperature sensor 13D detects the temperature of the mixed gas from the vaporizer 11 to the switching unit 4 when supplying the mixed gas to the processing target, and sends the detection result to the controller 8. The humidity sensor 13E detects the humidity of the mixed gas from the vaporizer 11 to the switching unit 4 when supplying the mixed gas to the processing target, and sends the detection result to the controller 8.

コントローラ８は、温度センサ１３Ｄが検出する混合ガスの温度及び湿度センサ１３Ｅが検出する混合ガスの湿度に基づいて気化用ヒータ１１Ｂ及び温度調節用ヒータ１１Ｃを制御し、これにより、混合ガスの温度及び湿度を目標の値に調節することが可能となる。 The controller 8 controls the vaporization heater 11B and the temperature control heater 11C based on the temperature of the mixed gas detected by the temperature sensor 13D and the humidity of the mixed gas detected by the humidity sensor 13E, thereby controlling the temperature of the mixed gas and the temperature of the mixed gas. It is possible to adjust the humidity to the target value.

超純水供給部６は、超純水タンク６１と、超純水タンク６１と気化器１１とを接続する流路６２と、流路６２上に設けられる流量調節弁６３とを有し、超純水タンク６１に貯留された超純水を流路６２を介して気化器１１に供給する。詳しくは、流量調節弁６３の開閉がコントローラ８によって制御されることにより、気化器１１への超純水の流入及び遮断が切り替わる。 The ultrapure water supply unit 6 has an ultrapure water tank 61, a flow path 62 connecting the ultrapure water tank 61 and the vaporizer 11, and a flow control valve 63 provided on the flow path 62. The ultrapure water stored in the pure water tank 61 is supplied to the vaporizer 11 via the flow path 62. Specifically, by controlling the opening and closing of the flow rate control valve 63 by the controller 8, the inflow and shutoff of ultrapure water into the vaporizer 11 is switched.

本実施の形態では、流路６２の下流側端部が気化器１１のタンク１１Ａの底部に接続され、流路６２からタンク１１Ａ内に流入した超純水が上方に向かう。ここで、気化器１１のタンク１１Ａ内には、流路６２の下流側端部と対向するように配置される邪魔板１１Ｄが設けられている。この邪魔板１１Ｄは流路６２から流出した超純水が低温のまま液面から放出されることを抑制し、処理対象に向かう混合ガスの温度及び湿度の乱れを抑制する。 In the present embodiment, the downstream end of the flow path 62 is connected to the bottom of the tank 11A of the vaporizer 11, and the ultrapure water flowing into the tank 11A from the flow path 62 goes upward. Here, in the tank 11A of the vaporizer 11, a baffle plate 11D arranged so as to face the downstream end of the flow path 62 is provided. The baffle plate 11D suppresses the ultrapure water flowing out of the flow path 62 from being released from the liquid surface at a low temperature, and suppresses turbulence in the temperature and humidity of the mixed gas toward the treatment target.

本実施の形態では、処理対象を極めて異物が少なくなるレベルまで洗浄するべく第２ガスの気化前材料として超純水を用いるが、要求される洗浄レベルに応じて、超純水に代えて純水や水道水が用いられてもよい。また、気化状態になった際に処理対象上の異物に対する洗浄及び除去処理が可能な物質であれば、超純水に代えて水以外の液体や固体を用いてもよい。具体的には、例えばＩＰＡ（イソプロピルアルコール）等の有機溶媒等を第１供給部１０で気化させてもよい。 In the present embodiment, ultrapure water is used as the pre-vaporization material of the second gas in order to clean the object to be treated to a level where the amount of foreign matter is extremely reduced. Water or tap water may be used. Further, a liquid or solid other than water may be used instead of ultrapure water as long as it is a substance that can be cleaned and removed from foreign substances on the object to be treated when it is in a vaporized state. Specifically, for example, an organic solvent such as IPA (isopropyl alcohol) may be vaporized in the first supply unit 10.

また、第１供給部１０は処理対象に対する洗浄及び除去処理とは異なる用途でも使用することができ、例えば成膜処理における材料ガスの供給等の用途でも使用することができる。この場合、第１供給部１０は、ＰＨ３、Ｂ２Ｈ６、ＳｉＨ４、ＴＥＯＳ、ＴＥＰＯ等を気化させ、キャリアガスとともに通流させてもよい。 Further, the first supply unit 10 can be used in an application different from the cleaning and removal treatment for the processing target, and can also be used in an application such as supply of a material gas in a film forming process. In this case, the first supply unit 10 may vaporize PH 3 , B 2 H 6 , SiH 4 , TEOS, TEPO, etc. and allow them to flow together with the carrier gas.

第２供給部２０は、第１ガス貯留部２から供給される窒素ガスを加熱する第２ガスヒータ２１と、第２ガスヒータ２１と第１ガス貯留部２とを接続する上流第２流路２２と、第２ガスヒータ２１と切り換え部４とを接続する下流第２流路２３と、を有している。 The second supply unit 20 includes a second gas heater 21 that heats the nitrogen gas supplied from the first gas storage unit 2, and an upstream second flow path 22 that connects the second gas heater 21 and the first gas storage unit 2. , A downstream second flow path 23 that connects the second gas heater 21 and the switching unit 4.

第２ガスヒータ２１は、上流第２流路２２を介して第１ガス貯留部２から供給される窒素ガスを加熱して下流第２流路２３へ流出させる。 The second gas heater 21 heats the nitrogen gas supplied from the first gas storage unit 2 via the upstream second flow path 22 and causes it to flow out to the downstream second flow path 23.

上流第２流路２２は、上流側第２流量調節弁２２Ａと、その下流側に配置される第２流量センサ２２Ｂとを有し、上流側第２流量調節弁２２Ａ及び第２流量センサ２２Ｂは、コントローラ８に電気的に接続されている。 The upstream second flow rate control valve 22 has an upstream side second flow rate control valve 22A and a second flow rate sensor 22B arranged on the downstream side thereof, and the upstream side second flow rate control valve 22A and the second flow rate sensor 22B have. , Electrically connected to the controller 8.

第２流量センサ２２Ｂは、第１ガス貯留部２から第２ガスヒータ２１に向かう窒素ガスの流量を検出し、その検出結果をコントローラ８に送る。上流側第２流量調節弁２２Ａは、第２流量センサ２２Ｂが検出する流量が目標の流量になるようにその開度をコントローラ８によって制御される。 The second flow rate sensor 22B detects the flow rate of nitrogen gas from the first gas storage unit 2 to the second gas heater 21, and sends the detection result to the controller 8. The opening degree of the upstream side second flow rate control valve 22A is controlled by the controller 8 so that the flow rate detected by the second flow rate sensor 22B becomes the target flow rate.

下流第２流路２３は、下流側第２流量調節弁２３Ａと、その下流側に配置される例えばエアオペレート弁や電磁弁である第２開閉弁２３Ｂと、これら下流側第２流量調節弁２３Ａと第２開閉弁２３Ｂとの間に配置される下流側流量センサ２３Ｃと、下流側第２流量調節弁２３Ａの上流側に配置される温度センサ２３Ｄと、を有している。これら各弁２３Ａ、２３Ｂ及び各センサ２３Ｃ，２３Ｄは、コントローラ８に電気的に接続されている。 The downstream second flow path 23 includes a downstream second flow rate control valve 23A, a second on-off valve 23B which is an air operated valve or a solenoid valve arranged on the downstream side thereof, and a downstream second flow rate control valve 23A. It has a downstream flow rate sensor 23C arranged between the second on-off valve 23B and a temperature sensor 23D arranged on the upstream side of the downstream second flow rate control valve 23A. The valves 23A and 23B and the sensors 23C and 23D are electrically connected to the controller 8.

第２供給部２０から切り換え部４を介して処理対象に混合ガスを供給する場合、第２開閉弁２３Ｂはコントローラ８によって閉状態から開状態に切り換えられ、第２供給部２０から処理対象に混合ガスを供給しない場合には閉状態となる。 When the mixed gas is supplied from the second supply unit 20 to the processing target via the switching unit 4, the second on-off valve 23B is switched from the closed state to the open state by the controller 8 and mixed with the processing target from the second supply unit 20. If no gas is supplied, it will be closed.

下流側流量センサ２３Ｃは、混合ガスを処理対象に供給する場合において第２ガスヒータ２１から切り換え部４に向かう混合ガスの流量を検出し、その検出結果をコントローラ８に送る。下流側第２流量調節弁２３Ａは、下流側流量センサ２３Ｃが検出する流量が目標の流量になるようにその開度をコントローラ８によって制御される。 The downstream flow rate sensor 23C detects the flow rate of the mixed gas from the second gas heater 21 toward the switching unit 4 when supplying the mixed gas to the processing target, and sends the detection result to the controller 8. The opening degree of the downstream second flow rate control valve 23A is controlled by the controller 8 so that the flow rate detected by the downstream flow rate sensor 23C becomes the target flow rate.

また、温度センサ２３Ｄは、混合ガスを処理対象に供給する場合において第２ガスヒータ２１から切り換え部４に向かう混合ガスの温度を検出し、その検出結果をコントローラ８に送る。そして、コントローラ８は、温度センサ２３Ｄが検出する混合ガスの温度に基づいて第２ガスヒータ２１を制御し、これにより、混合ガスの温度を目標の値に調節することが可能となる。 Further, the temperature sensor 23D detects the temperature of the mixed gas from the second gas heater 21 toward the switching unit 4 when supplying the mixed gas to the processing target, and sends the detection result to the controller 8. Then, the controller 8 controls the second gas heater 21 based on the temperature of the mixed gas detected by the temperature sensor 23D, whereby the temperature of the mixed gas can be adjusted to the target value.

第３供給部３０は、第１ガス貯留部２から供給される窒素ガスを加熱する第３ガスヒータ３１と、第３ガスヒータ３１と第１ガス貯留部２とを接続する上流第３流路３２と、第３ガスヒータ３１と切り換え部４とを接続する下流第３流路３３と、を有している。 The third supply unit 30 includes a third gas heater 31 that heats the nitrogen gas supplied from the first gas storage unit 2, and an upstream third flow path 32 that connects the third gas heater 31 and the first gas storage unit 2. , A downstream third flow path 33 that connects the third gas heater 31 and the switching unit 4.

第３ガスヒータ３１は、上流第３流路３２を介して第１ガス貯留部２から供給される窒素ガスを加熱して下流第３流路３３へ流出させる。本実施の形態では、第３ガスヒータ３１で加熱される窒素ガスを、第２供給部２０で加熱される窒素ガスよりも低い温度に制御して流出させるようになっている。 The third gas heater 31 heats the nitrogen gas supplied from the first gas storage unit 2 via the upstream third flow path 32 and causes it to flow out to the downstream third flow path 33. In the present embodiment, the nitrogen gas heated by the third gas heater 31 is controlled to flow out at a temperature lower than that of the nitrogen gas heated by the second supply unit 20.

上流第３流路３２は、上流側第３流量調節弁３２Ａと、その下流側に配置される第３流量センサ３２Ｂとを有し、上流側第３流量調節弁３２Ａ及び第３流量センサ３２Ｂは、コントローラ８に電気的に接続されている。 The upstream third flow rate control valve 32 has an upstream side third flow rate control valve 32A and a third flow rate sensor 32B arranged on the downstream side thereof, and the upstream side third flow rate control valve 32A and the third flow rate sensor 32B have. , Electrically connected to the controller 8.

第３流量センサ３２Ｂは、第１ガス貯留部２から第３ガスヒータ３１に向かう窒素ガスの流量を検出し、その検出結果をコントローラ８に送る。上流側第３流量調節弁３２Ａは、第３流量センサ３２Ｂが検出する流量が目標の流量になるようにその開度をコントローラ８によって制御される。 The third flow rate sensor 32B detects the flow rate of nitrogen gas from the first gas storage unit 2 to the third gas heater 31, and sends the detection result to the controller 8. The opening degree of the upstream third flow rate control valve 32A is controlled by the controller 8 so that the flow rate detected by the third flow rate sensor 32B becomes the target flow rate.

下流第３流路３３は、例えばエアオペレート弁や電磁弁である第３開閉弁３３Ｂと、第３開閉弁３３Ｂの上流側に配置される温度センサ３３Ｄと、を有し、第３開閉弁３３Ｂ及び温度センサ３３Ｄは、コントローラ８に電気的に接続されている。 The downstream third flow path 33 includes, for example, a third on-off valve 33B which is an air-operated valve or a solenoid valve, and a temperature sensor 33D arranged on the upstream side of the third on-off valve 33B, and the third on-off valve 33B. And the temperature sensor 33D is electrically connected to the controller 8.

第３供給部３０から切り換え部４を介して処理対象に混合ガスを供給する場合、第３開閉弁３３Ｂはコントローラ８によって閉状態から開状態に切り換えられ、第３供給部３０から処理対象に混合ガスを供給しない場合には閉状態となる。 When the mixed gas is supplied from the third supply unit 30 to the processing target via the switching unit 4, the third on-off valve 33B is switched from the closed state to the open state by the controller 8 and mixed with the processing target from the third supply unit 30. If no gas is supplied, it will be closed.

温度センサ３３Ｄは、混合ガスを処理対象に供給する場合において第３ガスヒータ３１から切り換え部４に向かう混合ガスの温度を検出し、その検出結果をコントローラ８に送る。そして、コントローラ８は、温度センサ３３Ｄが検出する混合ガスの温度に基づいて第３ガスヒータ３１を制御し、これにより、混合ガスの温度を目標の値に調節することが可能となる。 The temperature sensor 33D detects the temperature of the mixed gas from the third gas heater 31 toward the switching unit 4 when supplying the mixed gas to the processing target, and sends the detection result to the controller 8. Then, the controller 8 controls the third gas heater 31 based on the temperature of the mixed gas detected by the temperature sensor 33D, whereby the temperature of the mixed gas can be adjusted to the target value.

切り換え部４は、第１供給部１０の下流第１流路１３、第２供給部２０の下流第２流路２３及び第３供給部３０の下流第３流路３３の各下流側端部と接続する主管４１と、主管４１から分岐する第１枝管４２及び第２枝管４３と、第１枝管４２に設けられた第１枝管開閉弁４４と、第２枝管４３に設けられた第２枝管開閉弁４５と、を有している。 The switching unit 4 includes the downstream first flow path 13 of the first supply unit 10, the downstream second flow path 23 of the second supply unit 20, and the downstream end portions of the downstream third flow path 33 of the third supply unit 30. The main pipe 41 to be connected, the first branch pipe 42 and the second branch pipe 43 branching from the main pipe 41, the first branch pipe opening / closing valve 44 provided in the first branch pipe 42, and the second branch pipe 43 are provided. It also has a second branch pipe on-off valve 45.

第１枝管４２の下流側端部は第１処理対象Ｔ１にガスを供給し、第２枝管４３の下流側端部は第２処理対象Ｔ２にガスを供給する。本実施の形態では、第１処理対象Ｔ１が、ガス供給装置１による洗浄及び除去工程を受ける。一方で、第２処理対象Ｔ２は、ガス供給装置１による窒化処理を受ける。詳細は後述するが、第１処理対象Ｔ１は、第１供給部１０、第２供給部２０及び第３供給部３０のそれぞれからガスを供給され、第２処理対象Ｔ２は、第２供給部２０のみからガスを供給される。本実施の形態では、第２処理対象Ｔ２は、第２供給部２０のみからガスを供給されるが、第２処理対象Ｔ２も、第１処理対象Ｔ１と同様に、第１供給部１０、第２供給部２０及び第３供給部３０のそれぞれからガスを供給されてもよい。 The downstream end of the first branch pipe 42 supplies gas to the first treatment target T1, and the downstream end of the second branch pipe 43 supplies gas to the second treatment target T2. In the present embodiment, the first processing target T1 undergoes a cleaning and removing step by the gas supply device 1. On the other hand, the second processing target T2 is subjected to the nitriding treatment by the gas supply device 1. Although the details will be described later, the first processing target T1 is supplied with gas from each of the first supply unit 10, the second supply unit 20, and the third supply unit 30, and the second processing target T2 is the second supply unit 20. Gas is supplied only from. In the present embodiment, the second processing target T2 is supplied with gas only from the second supply unit 20, but the second processing target T2 is also supplied with the first supply unit 10 and the first processing unit T2 as well as the first processing target T1. Gas may be supplied from each of 2 supply part 20 and 3rd supply part 30.

第１処理対象Ｔ１又は第２処理対象Ｔ２へのガスの供給を行う際には、第１枝管開閉弁４４及び第２枝管開閉弁４５の開閉がコントローラ８によって制御される。なお、本実施の形態では主管４１から２つの第１枝管４２と第２枝管４３とが分岐するが、３以上の枝管が分岐してもよい。また、枝管は無くてもよい。 When supplying gas to the first processing target T1 or the second processing target T2, the controller 8 controls the opening and closing of the first branch pipe on-off valve 44 and the second branch pipe on-off valve 45. In the present embodiment, the two first branch pipes 42 and the second branch pipe 43 branch from the main pipe 41, but three or more branch pipes may branch. Moreover, the branch pipe may be omitted.

本実施の形態では第１処理対象Ｔ１及び第２処理対象Ｔ２が半導体ウェハやガラス基板等の基板であることを想定しているが、処理対象はガスによる処理を受け得るものであれば特に限定されるものではない。 In the present embodiment, it is assumed that the first processing target T1 and the second processing target T2 are substrates such as semiconductor wafers and glass substrates, but the processing target is particularly limited as long as it can be processed by gas. It is not something that is done.

コントローラ８は、ＣＰＵ，ＲＯＭ，ＲＡＭ等を備えるコンピュータで構成されてもよく、この場合、記憶されたプログラムに従って各部の動作を制御してもよい。コントローラ８は、上述したが弁（１３Ｂ，２３Ｂ，３３Ｂ，４４，４５）の開閉や、弁（１２Ａ，２２Ａ，３２Ａ，１３Ａ，２３Ａ）の開度調節や、ヒータの加熱量の調節などを行う。 The controller 8 may be composed of a computer including a CPU, ROM, RAM, and the like. In this case, the operation of each unit may be controlled according to a stored program. As described above, the controller 8 opens and closes the valves (13B, 23B, 33B, 44, 45), adjusts the opening degree of the valves (12A, 22A, 32A, 13A, 23A), adjusts the heating amount of the heater, and the like. ..

次に、ガス供給装置１の動作例について図２及び図３を参照しつつ説明する。 Next, an operation example of the gas supply device 1 will be described with reference to FIGS. 2 and 3.

図２は、第１処理対象Ｔ１が、プレ加熱工程、洗浄及び除去工程、蒸発及び乾燥工程をこの順で受けることを説明するグラフを示している。グラフの横軸は、時間軸を示し、縦軸は、第１処理対象Ｔ１に供給されるガスの温度を示している。 FIG. 2 shows a graph for explaining that the first processing target T1 undergoes a preheating step, a washing and removing step, and an evaporation and drying step in this order. The horizontal axis of the graph shows the time axis, and the vertical axis shows the temperature of the gas supplied to the first processing target T1.

プレ加熱工程は、窒素ガスを第３供給部３０から第１処理対象Ｔ１に供給することにより行われる。 The preheating step is performed by supplying nitrogen gas from the third supply unit 30 to the first processing target T1.

プレ加熱工程では、第３流量センサ３２Ｂが検出する窒素ガスの流量が目標の流量となるようにコントローラ８によって上流側第３流量調節弁３２Ａの開度が調節される。また、第３ガスヒータ３１の加熱量は、温度センサ３３Ｄが検出する窒素ガスの温度が目標の温度となるようにコントローラ８によって調節される。この例では、窒素ガスの温度が５０度以上９０度以下の範囲に設定される目標の温度に調節される。また、第３開閉弁３３Ｂはコントローラ８によって開状態にセットされる。
一方で、切り換え部４の第１枝管開閉弁４４はコントローラ８によって開状態にセットされ、第２枝管開閉弁４５はコントローラ８によって閉状態にセットされる。また、第１供給部１０の第１開閉弁１３Ｂ及び第２供給部２０の第２開閉弁２３Ｂも閉状態にセットされる。 In the preheating step, the opening degree of the upstream third flow rate control valve 32A is adjusted by the controller 8 so that the flow rate of the nitrogen gas detected by the third flow rate sensor 32B becomes the target flow rate. Further, the heating amount of the third gas heater 31 is adjusted by the controller 8 so that the temperature of the nitrogen gas detected by the temperature sensor 33D becomes the target temperature. In this example, the temperature of the nitrogen gas is adjusted to a target temperature set in the range of 50 degrees or more and 90 degrees or less. Further, the third on-off valve 33B is set to the open state by the controller 8.
On the other hand, the first branch pipe on-off valve 44 of the switching unit 4 is set to the open state by the controller 8, and the second branch pipe on-off valve 45 is set to the closed state by the controller 8. Further, the first on-off valve 13B of the first supply unit 10 and the second on-off valve 23B of the second supply unit 20 are also set in the closed state.

次いで、洗浄及び除去工程は、混合ガスを第１供給部１０から第１処理対象Ｔ１に供給することにより行われる。第１流量センサ１２Ｂを通過した窒素ガスは、気化器１１に流入し、気化用ヒータ１１Ｂによって超純水を気化させた水蒸気と混合され、これにより、混合ガスが生成される。そして、混合ガスは、下流第２流路２３を通して第１処理対象Ｔ１に向かう。なお、洗浄及び除去工程は、第１処理対象Ｔ１が半導体ウェハである場合、半導体ウェハに存在するフッ素等の異物を洗浄、除去する。 Next, the cleaning and removing steps are performed by supplying the mixed gas from the first supply unit 10 to the first processing target T1. The nitrogen gas that has passed through the first flow rate sensor 12B flows into the vaporizer 11 and is mixed with the water vapor obtained by vaporizing the ultrapure water by the vaporization heater 11B, whereby the mixed gas is generated. Then, the mixed gas goes to the first processing target T1 through the downstream second flow path 23. In the cleaning and removing steps, when the first processing target T1 is a semiconductor wafer, foreign substances such as fluorine existing on the semiconductor wafer are cleaned and removed.

洗浄及び除去工程では、第１流量センサ１２Ｂが検出する窒素ガスの流量が目標の流量となるようにコントローラ８によって上流側第１流量調節弁１２Ａの開度が調節される。また、気化器１１における気化用ヒータ１１Ｂの加熱量及び温度調節用ヒータ１１Ｃの加熱量は、温度センサ１３Ｄが検出する混合ガスの温度及び湿度が目標の温度及び湿度となるようにコントローラ８によって調節される。この例では、混合ガスの温度が９０度、湿度が９０％ｒｈとなるように調節される。また、この例では、混合ガスの目標温度がプレ加熱工程における窒素ガスの目標温度よりも高く設定されている。
また、下流側第１流量調節弁１３Ａの開度は、下流側流量センサ１３Ｃが検出する混合ガスの流量が目標の流量となるようにコントローラ８によって調節される。また、第１開閉弁１３Ｂはコントローラ８によって開状態にセットされる。
一方で、切り換え部４の第１枝管開閉弁４４はコントローラ８によって開状態にセットされ、第２枝管開閉弁４５はコントローラ８によって閉状態にセットされる。また、第２供給部２０の第２開閉弁２３Ｂ及び第３供給部３０の第３開閉弁３３Ｂも閉状態にセットされる。 In the cleaning and removing steps, the opening degree of the upstream first flow rate control valve 12A is adjusted by the controller 8 so that the flow rate of the nitrogen gas detected by the first flow rate sensor 12B becomes the target flow rate. Further, the heating amount of the vaporizing heater 11B and the heating amount of the temperature adjusting heater 11C in the vaporizer 11 are adjusted by the controller 8 so that the temperature and humidity of the mixed gas detected by the temperature sensor 13D become the target temperature and humidity. Will be done. In this example, the temperature of the mixed gas is adjusted to 90 degrees and the humidity is adjusted to 90% rh. Further, in this example, the target temperature of the mixed gas is set higher than the target temperature of the nitrogen gas in the preheating step.
Further, the opening degree of the downstream side first flow rate control valve 13A is adjusted by the controller 8 so that the flow rate of the mixed gas detected by the downstream side flow rate sensor 13C becomes the target flow rate. Further, the first on-off valve 13B is set to the open state by the controller 8.
On the other hand, the first branch pipe on-off valve 44 of the switching unit 4 is set to the open state by the controller 8, and the second branch pipe on-off valve 45 is set to the closed state by the controller 8. Further, the second on-off valve 23B of the second supply unit 20 and the third on-off valve 33B of the third supply unit 30 are also set in the closed state.

次いで、蒸発及び乾燥工程は、窒素ガスを第２供給部２０から第１処理対象Ｔ１に供給することにより行われる。第２流量センサ２２Ｂを通過した窒素ガスは、第２ガスヒータ２１に流入して加熱される。加熱された窒素ガスは、下流第３流路３３を通して第１処理対象Ｔ１に向かう。蒸発及び乾燥工程は、加熱した窒素ガスによって第１処理対象Ｔ１上に存在する水分を蒸発又は乾燥させる。水分とは、典型的には第２ガスである水蒸気が凝縮した物質（超純水）である。 Next, the evaporation and drying steps are performed by supplying nitrogen gas from the second supply unit 20 to the first processing target T1. The nitrogen gas that has passed through the second flow rate sensor 22B flows into the second gas heater 21 and is heated. The heated nitrogen gas goes to the first processing target T1 through the downstream third flow path 33. In the evaporation and drying step, the water existing on the first treatment target T1 is evaporated or dried by the heated nitrogen gas. Moisture is typically a substance (ultrapure water) in which water vapor, which is a second gas, is condensed.

蒸発及び乾燥工程では、第２流量センサ２２Ｂが検出する窒素ガスの流量が目標の流量となるようにコントローラ８によって上流側第２流量調節弁２２Ａの開度が調節される。また、第２ガスヒータ２１の加熱量は、温度センサ２３Ｄが検出する窒素ガスの温度が目標の温度となるようにコントローラ８によって調節される。この例では、窒素ガスの温度が２００度以上に設定される目標の温度に調節される。また、下流側第２流量調節弁２３Ａの開度は、下流側流量センサ２３Ｃが検出する窒素ガスの流量が目標の流量となるようにコントローラ８によって調節される。また、第２開閉弁２３Ｂはコントローラ８によって開状態にセットされる。蒸発及び乾燥工程で供給する窒素ガスの温度は、超純水、すなわち第２ガスの材料の沸点の２倍以上の温度とするのがよい。 In the evaporation and drying steps, the opening degree of the upstream second flow rate control valve 22A is adjusted by the controller 8 so that the flow rate of the nitrogen gas detected by the second flow rate sensor 22B becomes the target flow rate. Further, the heating amount of the second gas heater 21 is adjusted by the controller 8 so that the temperature of the nitrogen gas detected by the temperature sensor 23D becomes the target temperature. In this example, the temperature of the nitrogen gas is adjusted to a target temperature set to 200 degrees or higher. Further, the opening degree of the downstream side second flow rate control valve 23A is adjusted by the controller 8 so that the flow rate of nitrogen gas detected by the downstream side flow rate sensor 23C becomes the target flow rate. Further, the second on-off valve 23B is set to the open state by the controller 8. The temperature of the nitrogen gas supplied in the evaporation and drying steps is preferably ultrapure water, that is, a temperature at least twice the boiling point of the material of the second gas.

一方で、切り換え部４の第１枝管開閉弁４４はコントローラ８によって開状態にセットされ、第２枝管開閉弁４５はコントローラ８によって閉状態にセットされる。また、第１供給部１０の第１開閉弁１３Ｂ及び第３供給部３０の第３開閉弁３３Ｂも閉状態にセットされる。 On the other hand, the first branch pipe on-off valve 44 of the switching unit 4 is set to the open state by the controller 8, and the second branch pipe on-off valve 45 is set to the closed state by the controller 8. Further, the first on-off valve 13B of the first supply unit 10 and the third on-off valve 33B of the third supply unit 30 are also set in the closed state.

また、図３は、図２で示した動作の変形例である。この例では、図３に示すようにプレ加熱工程における窒素ガスの温度が、洗浄及び除去工程で第１処理対象Ｔに供給する混合ガスの温度よりも高く設定されている。プレ加熱工程における窒素ガスの温度は、例えば１００度でもよく、この場合、洗浄及び除去工程における混合ガスの温度は、上述と同様に９０度でもよい。 Further, FIG. 3 is a modified example of the operation shown in FIG. In this example, as shown in FIG. 3, the temperature of the nitrogen gas in the preheating step is set higher than the temperature of the mixed gas supplied to the first treatment target T in the washing and removing steps. The temperature of the nitrogen gas in the preheating step may be, for example, 100 degrees, and in this case, the temperature of the mixed gas in the cleaning and removing steps may be 90 degrees as described above.

図２及び図３で示したガス供給（基板処理又は洗浄方法）では、混合ガスを第１処理対象Ｔ１に供給することで、第１処理対象Ｔ１に対して水蒸気による洗浄・除去処理を行うことができる。このように水蒸気が用いられることで、第１処理対象Ｔ１が微細構造物（極微細パターン）有する場合であっても効果的な洗浄及び除去処理を行うことができる。 In the gas supply (board treatment or cleaning method) shown in FIGS. 2 and 3, the mixed gas is supplied to the first treatment target T1 to perform cleaning / removal treatment with steam on the first treatment target T1. Can be done. By using water vapor in this way, even when the first treatment target T1 has a fine structure (ultrafine pattern), effective cleaning and removal treatment can be performed.

また、図２及び図３の例ではプレ加熱工程を行うことにより、その後の洗浄及び除去工程の洗浄及び除去効果を向上させることが可能となる。すなわち、プレ加熱工程で第１処理対象Ｔ１を予め加温しておけば、混合ガスを第１処理対象Ｔ１に供給した際に生じ得る第１処理対象Ｔ１上の結露が抑制され、その結果、洗浄・除去効果の低下を抑制できる。したがって、第１処理対象Ｔ１に微細構造物（極微細パターン）が存在する場合において特に有益な洗浄・除去を実施することが可能となる。 Further, in the examples of FIGS. 2 and 3, by performing the preheating step, it is possible to improve the cleaning and removing effect of the subsequent cleaning and removing steps. That is, if the first treatment target T1 is preheated in the preheating step, dew condensation on the first treatment target T1 that may occur when the mixed gas is supplied to the first treatment target T1 is suppressed, and as a result, the dew condensation is suppressed. It is possible to suppress a decrease in the cleaning / removing effect. Therefore, it is possible to carry out particularly useful cleaning / removal when a fine structure (ultrafine pattern) is present in the first treatment target T1.

一方で、ガス供給装置１は、上述した洗浄及び除去に関する一連の動作の他に、第２処理対象Ｔ２に対する窒化処理も行うことができる。この窒化処理は、窒素ガスを第２供給部２０から第２処理対象Ｔ２に供給することにより行われる。この際、切り換え部４の第２枝管開閉弁４５はコントローラ８によって開状態にセットされ、第１枝管開閉弁４４はコントローラ８によって閉状態にセットされる。 On the other hand, the gas supply device 1 can also perform nitriding treatment on the second processing target T2 in addition to the series of operations related to cleaning and removal described above. This nitriding treatment is performed by supplying nitrogen gas from the second supply unit 20 to the second treatment target T2. At this time, the second branch pipe on-off valve 45 of the switching unit 4 is set to the open state by the controller 8, and the first branch pipe on-off valve 44 is set to the closed state by the controller 8.

以上に説明した実施の形態では、基板等の処理対象上の異物の洗浄及び除去を効果的に行うことができる。特に、第１供給部１０、第２供給部２０及び第３供給部３０は共有のガス源からガスを導入するため、占有範囲やコストを抑制しつつガスを用いた所望の処理を行うことができる。また、混合ガスによる洗浄及び除去工程の前にプレ加熱工程を行うことで、洗浄及び除去効果を向上できる。 In the embodiment described above, it is possible to effectively clean and remove foreign substances on the processing target such as a substrate. In particular, since the first supply unit 10, the second supply unit 20, and the third supply unit 30 introduce the gas from the shared gas source, it is possible to perform the desired treatment using the gas while suppressing the occupied range and cost. it can. Further, by performing the preheating step before the cleaning / removing step with the mixed gas, the cleaning / removing effect can be improved.

以上、本発明の一実施の形態を説明したが、本発明は上述の実施の形態に限られるものではなく、上述の実施の形態には各種の変更を加えることができる。 Although one embodiment of the present invention has been described above, the present invention is not limited to the above-described embodiment, and various modifications can be made to the above-described embodiment.

例えば図４に示す変形例では、気化器１１における邪魔板１１Ｄの設置態様が上述の実施の形態と異なる。すなわち、図４に示す変形例では、邪魔板１１Ｄが、その板面を上下方向に沿わせ、且つ水平方向で流路６２の下流側端部と気化用ヒータ１１Ｂとの間に位置している。さらに、邪魔板１１Ｄの下端部は気化用ヒータ１１Ｂよりも下方に位置している。 For example, in the modified example shown in FIG. 4, the installation mode of the baffle plate 11D in the vaporizer 11 is different from the above-described embodiment. That is, in the modified example shown in FIG. 4, the baffle plate 11D is located along the plate surface in the vertical direction and horizontally between the downstream end of the flow path 62 and the vaporization heater 11B. .. Further, the lower end of the baffle plate 11D is located below the vaporization heater 11B.

図４に示す構成では、流路６２の下流側端部から気化器１１内に流入した超純水が低温のまま気化用ヒータ１１Ｂに当たり、気化用ヒータ１１Ｂの加熱能力が乱れることを抑制できる。 In the configuration shown in FIG. 4, it is possible to prevent the ultrapure water flowing into the vaporizer 11 from the downstream end of the flow path 62 from hitting the vaporizer 11B at a low temperature and disturbing the heating capacity of the vaporizer 11B.

また、図５に示す変形例では第３供給部３０が設けられていない。この変形例においては、上述したプレ加熱工程及び蒸発及び乾燥工程が、第２供給部２０によって行われる。 Further, in the modified example shown in FIG. 5, the third supply unit 30 is not provided. In this modification, the preheating step and the evaporation and drying step described above are performed by the second supply unit 20.

１…ガス供給装置、２…第１ガス貯留部、４…切り換え部、６…超純水供給部、８…コントローラ、１０…第１供給部、１１…気化器、１１Ａ…タンク、１１Ｂ…気化用ヒータ、１１Ｃ…温度調節用ヒータ、１１Ｄ…邪魔板、１２…上流第１流路、１２Ａ…上流側第１流量調節弁、１２Ｂ…第１流量センサ、１３…下流第１流路、１３Ａ…下流側第１流量調節弁、１３Ｂ…第１開閉弁、１３Ｃ…下流側流量センサ、１３Ｄ…温度センサ、１３Ｅ…湿度センサ、２０…第２供給部、２１…第２ガスヒータ、２２…上流第２流路、２２Ａ…上流側第２流量調節弁、２２Ｂ…第２流量センサ、２３…下流第２流路、２３Ａ…下流側第２流量調節弁、２３Ｂ…第２開閉弁、２３Ｃ…下流側流量センサ、２３Ｄ…温度センサ、３０…第３供給部、３１…第３ガスヒータ、３２…上流第３流路、３２Ａ…上流側第３流量調節弁、３２Ｂ…第３流量センサ、３３…下流第３流路、３３Ｂ…第３開閉弁、３３Ｄ…温度センサ、４１…主管、４２…第１枝管、４３…第２枝管、４４…第１枝管開閉弁、４５…第２枝管開閉弁、６１…超純水タンク、６２…流路、６３…流量調節弁、Ｔ１…第１処理対象、Ｔ２…第２処理対象 1 ... Gas supply device, 2 ... 1st gas storage unit, 4 ... Switching unit, 6 ... Ultra pure water supply unit, 8 ... Controller, 10 ... 1st supply unit, 11 ... Vaporizer, 11A ... Tank, 11B ... Vaporization Heater, 11C ... Temperature control heater, 11D ... Baffle plate, 12 ... Upstream first flow path, 12A ... Upstream side first flow control valve, 12B ... First flow sensor, 13 ... Downstream first flow path, 13A ... Downstream 1st flow control valve, 13B ... 1st on-off valve, 13C ... Downstream flow sensor, 13D ... Temperature sensor, 13E ... Humidity sensor, 20 ... 2nd supply unit, 21 ... 2nd gas heater, 22 ... Upstream 2nd Flow path, 22A ... upstream side second flow rate control valve, 22B ... second flow rate sensor, 23 ... downstream second flow path, 23A ... downstream side second flow rate control valve, 23B ... second on-off valve, 23C ... downstream side flow rate Sensor, 23D ... Temperature sensor, 30 ... Third supply unit, 31 ... Third gas heater, 32 ... Upstream third flow path, 32A ... Upstream third flow control valve, 32B ... Third flow sensor, 33 ... Downstream third Flow path, 33B ... 3rd on-off valve, 33D ... Temperature sensor, 41 ... Main pipe, 42 ... 1st branch pipe, 43 ... 2nd branch pipe, 44 ... 1st branch pipe on-off valve, 45 ... 2nd branch pipe on-off valve , 61 ... Ultra pure water tank, 62 ... Flow path, 63 ... Flow control valve, T1 ... First processing target, T2 ... Second processing target

Claims (14)

第１ガスを、材料を気化させることにより生成される第２ガスのキャリアガスとして前記第２ガスと混合させ、前記第１ガスと前記第２ガスとの混合ガスを処理対象に供給する第１供給工程と、
加熱した前記第１ガスを、前記処理対象に供給する第２供給工程と、を備える、ガス供給方法。 The first gas is mixed with the second gas as a carrier gas of the second gas generated by vaporizing the material, and the mixed gas of the first gas and the second gas is supplied to the processing target. Supply process and
A gas supply method comprising a second supply step of supplying the heated first gas to the processing target. 前記第１供給工程で用いる前記第１ガスと、前記第２供給工程で用いる前記第１ガスとを、共通のガス貯留部から導入する、請求項１に記載のガス供給方法。 The gas supply method according to claim 1, wherein the first gas used in the first supply step and the first gas used in the second supply step are introduced from a common gas storage unit. 前記第２供給工程では、加熱した前記第１ガスによって前記第２ガスを蒸発させる、請求項１又は２に記載のガス供給方法。 The gas supply method according to claim 1 or 2, wherein in the second supply step, the second gas is evaporated by the heated first gas. 前記第１供給工程の前に行われるプレ加熱工程をさらに備え、
前記プレ加熱工程では、加熱した前記第１ガスを前記処理対象に供給する、請求項１乃至３のいずれかに記載のガス供給方法。 A preheating step performed before the first supply step is further provided.
The gas supply method according to any one of claims 1 to 3, wherein in the preheating step, the heated first gas is supplied to the processing target. 前記第１供給工程で用いる前記第１ガスと、前記第２供給工程で用いる前記第１ガスと、前記プレ加熱工程で用いる前記第１ガスとを、共通のガス貯留部から導入する、請求項４に記載のガス供給方法。 A claim that the first gas used in the first supply step, the first gas used in the second supply step, and the first gas used in the preheating step are introduced from a common gas storage unit. 4. The gas supply method according to 4. 第１ガスを、材料を気化させることにより生成される第２ガスのキャリアガスとして前記第２ガスと混合させ、前記第１ガスと前記第２ガスとの混合ガスを基板に供給する第１供給工程と、
加熱した前記第１ガスを、前記基板に供給する第２供給工程と、を備える、基板処理方法。 A first supply in which the first gas is mixed with the second gas as a carrier gas of the second gas generated by vaporizing the material, and the mixed gas of the first gas and the second gas is supplied to the substrate. Process and
A substrate processing method comprising a second supply step of supplying the heated first gas to the substrate. 前記第１供給工程で用いる前記第１ガスと、前記第２供給工程で用いる前記第１ガスとを、共通のガス貯留部から導入する、請求項６に記載の基板処理方法。 The substrate processing method according to claim 6, wherein the first gas used in the first supply step and the first gas used in the second supply step are introduced from a common gas storage unit. 前記第２供給工程では、加熱した前記第１ガスによって前記第２ガスを蒸発させる、請求項６又は７に記載の基板処理方法。 The substrate processing method according to claim 6 or 7, wherein in the second supply step, the second gas is evaporated by the heated first gas. 前記第１供給工程の前に行われるプレ加熱工程をさらに備え、
前記プレ加熱工程では、加熱した前記第１ガスを前記基板に供給する、請求項６乃至８のいずれかに記載の基板処理方法。 A preheating step performed before the first supply step is further provided.
The substrate processing method according to any one of claims 6 to 8, wherein in the preheating step, the heated first gas is supplied to the substrate. 前記第１供給工程で用いる前記第１ガスと、前記第２供給工程で用いる前記第１ガスと、前記プレ加熱工程で用いる前記第１ガスとを、共通のガス貯留部から導入する、請求項９に記載の基板処理方法。 A claim that the first gas used in the first supply step, the first gas used in the second supply step, and the first gas used in the preheating step are introduced from a common gas storage unit. 9. The substrate processing method according to 9. 前記材料が、超純水である、請求項６乃至１０のいずれかに記載の基板処理方法。 The substrate processing method according to any one of claims 6 to 10, wherein the material is ultrapure water. 前記第１ガスは、窒素ガスである、請求項１１に記載の基板処理方法。 The substrate processing method according to claim 11, wherein the first gas is nitrogen gas. 第１ガスを貯留する第１ガス貯留部と、
材料を気化させることにより第２ガスを生成する気化器を有し、前記第１ガス貯留部から供給される前記第１ガスを前記第２ガスのキャリアガスとして前記第２ガスと混合させ、前記第１ガスと前記第２ガスとの混合ガスを流出させる第１供給部と、
前記第１ガス貯留部から供給される前記第１ガスを加熱して流出させる第２供給部と、を備える、ガス供給装置。 The first gas storage unit that stores the first gas and
It has a vaporizer that generates a second gas by vaporizing the material, and the first gas supplied from the first gas storage unit is mixed with the second gas as a carrier gas of the second gas, and the above. A first supply unit that allows a mixed gas of the first gas and the second gas to flow out, and
A gas supply device including a second supply unit that heats and flows out the first gas supplied from the first gas storage unit. 前記第１ガス貯留部から供給される前記第１ガスを加熱して流出させる第３供給部をさらに備え、
前記第３供給部は、前記第１ガスを、前記第２供給部で加熱される前記第１ガスよりも低い温度になるように加熱して流出させる、請求項１３に記載のガス供給装置。 A third supply unit for heating and flowing out the first gas supplied from the first gas storage unit is further provided.
The gas supply device according to claim 13, wherein the third supply unit heats the first gas to a temperature lower than that of the first gas heated by the second supply unit and causes the first gas to flow out.
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JPH03137401A (en) * 1989-10-11 1991-06-12 Applied Materials Inc steam generator
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JPH03137401A (en) * 1989-10-11 1991-06-12 Applied Materials Inc steam generator
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