JP2021062498A - Production method of metal structure forming original plate, production method of metal structure, metal structure forming original plate, metal structure, and resin molded article - Google Patents

Abstract

To provide a method of producing a metal structure forming original plate capable of producing a metal structure easily at a low cost.SOLUTION: A method of producing a metal structure forming original plate of this invention produces the original plate having a stepwise shape in which a second recess is disposed in a first bottom face. The method comprises the steps of: forming on a surface of a silicon substrate 1 a protective film 2' having a first pattern in which an opening part that exposes a part of the silicon substrate is disposed; etching the silicon substrate by masking with the protective film and forming a first recess 4 including the first bottom face parallel to the surface of the silicon substrate and a first side face, around the first bottom face, having an inclined angle with respect to the bottom face; forming on the silicon substrate a protective film having, on a surface of the first recess, a second pattern in which an opening part that exposes a part of the silicon substrate is disposed in the first bottom face; and etching the silicon substrate by masking with the protective film and forming a second recess including a second bottom face parallel to the surface of the silicon substrate and a second side face, around the second bottom face, having an inclined angle with respect to the bottom face.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to a method for producing an original plate for forming a metal structure, a method for producing a metal structure, an original plate for forming a metal structure, a metal structure, and a resin molded product.

The resin molded product is manufactured by injection molding, blow molding, or press molding using a metal mold (for example, Patent Document 1 and the like). As a method for producing a metal mold, a mold is used as an original plate, metal is deposited by plating to form a desired shape to produce a metal mold, or a metal mold is produced by a cutting method. The method of producing is mentioned.

However, when a metal mold is manufactured using a conventional mold, the accuracy of the mold is limited, so that the range of molding into a metal mold using the mold is limited. In addition, there is a problem that the metal mold is damaged when it is separated from the mold, and it is difficult to manufacture a metal mold having a fine structure.

Further, even when the metal mold is manufactured by the cutting method, the cutting accuracy of the cutting tool is limited, and when the fine metal mold is manufactured, a great deal of labor and cost are required.

In addition, the nested metal mold in which the main part (base material part) and the pin part (staircase structure part) are separated can realize a precise and fine shape, but when considering manufacturing by multi-imposition, it is made of metal. There was a problem that the cost of the mold became very high.

Therefore, no matter which method is used, a metal structure such as a metal mold having a fine structure cannot be easily and inexpensively obtained.

Japanese Unexamined Patent Publication No. 03-27920

A main object of the present disclosure is to provide a method for producing an original plate for forming a metal structure, which can easily and inexpensively produce a metal structure.

In the present disclosure, a step of forming a protective film having a first pattern in which an opening for partially exposing the silicon substrate is arranged on the surface of a silicon substrate having a (100) surface as a surface, and the first step. Wet anisotropic etching is performed on the silicon substrate using a protective film having a pattern as a mask, and the silicon substrate is arranged on the first bottom surface parallel to the surface of the silicon substrate and around the first bottom surface, and is placed on the first bottom surface. On the other hand, a step of forming a first recess having a first side surface having an inclination angle of 54.7 ° ± 1 °, and after forming a protective film on the surface of the first recess, on the first bottom surface. A step of forming a protective film having a second pattern on the silicon substrate on which an opening for partially exposing the silicon substrate is arranged, and using the protective film having the second pattern as a mask on the silicon substrate. A second bottom surface parallel to the surface of the silicon substrate and a second bottom surface that is arranged around the second bottom surface and has an inclination angle of 54.7 ° ± 1 ° with respect to the bottom surface. An original plate for forming a metal structure having a step of forming a second recess having a side surface and having a stepped shape of two or more steps in which the second recess is arranged on the first bottom surface. Provided is a method for manufacturing an original plate for forming a metal structure.

Further, the present disclosure comprises a step of forming a protective film having a first pattern on the surface of a silicon substrate having a (100) surface as a surface, in which an opening for partially exposing the silicon substrate is arranged. Wet anisotropic etching was performed on the silicon substrate using the protective film having the pattern of 1 as a mask to form a temporary recess, and the protective film arranged on the outer periphery of the temporary recess was removed. A step of forming a protective film having a second pattern having an opening larger than the temporary recess in a plan view on the silicon substrate, and using the protective film having the second pattern as a mask on the silicon substrate. On the other hand, by performing wet anisotropic etching, it is arranged around the first bottom surface parallel to the surface of the silicon substrate and the first bottom surface, and is inclined by 54.7 ° ± 1 ° with respect to the first bottom surface. A first side surface having a corner, a first recess having a corner, a second bottom surface formed on the first bottom surface and parallel to the surface of the silicon substrate, and a second bottom surface arranged around the second bottom surface and formed on the bottom surface. On the other hand, it has a step of simultaneously forming a second side surface having an inclination angle smaller than 54.7 ° and a second recess having the second recess, and the second recess is arranged on the first bottom surface. Provided is a method for manufacturing a metal structure forming original plate, which manufactures a metal structure forming original plate in which two or more steps are formed.

Further, the present disclosure is a method for manufacturing a metal structure, which is a step of manufacturing a metal structure forming original plate by the above-mentioned method for manufacturing a metal structure forming original plate, and plating on the metal structure forming original plate. Provided is a method for producing a metal structure, which comprises a step of depositing a metal by a treatment to form a metal structure and a step of separating the metal structure from the original plate for forming the metal structure. To do.

Further, the present disclosure is a method for manufacturing a resin molded product, in which a metal structure is manufactured by the above-mentioned manufacturing method for a metal structure, the metal structure is used as an injection molding mold, and the resin is in a fluid state. Provided is a method for producing a resin molded product, which comprises obtaining a resin molded product by injecting and molding the product.

Further, the present disclosure is arranged on the surface of a silicon substrate having a (100) surface as a surface, a first bottom surface parallel to the surface of the silicon substrate, and around the first bottom surface, and 54 with respect to the first bottom surface. A first recess having a first side surface having an inclination angle of .7 ° ± 1 °, a second bottom surface arranged on the first bottom surface and parallel to the surface of the silicon substrate, and the second bottom surface. It has a second side surface having an inclination angle of 54.7 ° ± 1 ° with respect to the second bottom surface, and a second recess having the first recess and the second recess. Provided is an original plate for forming a metal structure, in which two or more steps are formed by recesses.

Further, the silicon substrate having the (100) plane as the surface is arranged around the first bottom surface parallel to the surface of the silicon substrate and the first bottom surface, and is 54.7 ° ± 1 ° with respect to the first bottom surface. A first recess having a first side surface having an inclination angle of, and a second bottom surface arranged on the first bottom surface and parallel to the surface of the silicon substrate, and around the second bottom surface. It has a second side surface having an inclination angle smaller than 54.7 ° with respect to the second bottom surface, and a second recess having the first recess and the second recess, so that the stairs have two or more steps. Provided is an original plate for forming a metal structure having a configured shape.

Further, the present disclosure discloses a metal substrate, a first top surface protruding from the metal substrate and parallel to the surface of the metal substrate, and arranged around the first top surface at 54.7 ° with respect to the surface of the metal substrate. A first convex portion having a first side wall surface having an inclination angle of ± 1 °, a second top surface protruding from the first top surface and parallel to the first top surface, and the second top surface. It is composed of a second side wall surface arranged around the surface and a second convex portion having the first convex portion and the second convex portion, and a stepped shape of two or more steps is formed. , Provides a metal structure.

Further, in the present disclosure, the resin substrate is arranged around the first bottom surface parallel to the surface of the resin substrate and the first bottom surface, and has an inclination angle of 54.7 ° ± 1 ° with respect to the first bottom surface. A first side surface having a first side surface, a second bottom surface arranged on the first bottom surface and parallel to the surface of the resin substrate, and a second side surface arranged around the second bottom surface. Provided is a resin molded product having a second recess having a structure of two or more steps formed by the first recess and the second recess.

According to the present disclosure, there is an effect that it is possible to provide a method for producing an original plate for forming a metal structure, which can easily and inexpensively produce a metal structure having a fine structure.

It is a schematic process diagram which shows an example of the manufacturing method of the original plate for forming a metal structure of this disclosure. It is a schematic process diagram which shows an example of the manufacturing method of the original plate for forming a metal structure of this disclosure. It is a schematic process diagram which shows another example of the manufacturing method of the original plate for forming a metal structure of this disclosure. It is a schematic process diagram which shows another example of the manufacturing method of the original plate for forming a metal structure of this disclosure. It is a schematic top view, a schematic sectional view, and the schematic top view of the resin molded article obtained by using the metal structure forming original plate which shows an example of the metal structure forming original plate of this disclosure. It is a schematic top view, a schematic sectional view, and the schematic top view of the resin molded article obtained by using the metal structure forming original plate which shows another example of the metal structure forming original plate of this disclosure. It is schematic cross-sectional view which shows another example of the original plate for forming a metal structure of this disclosure. It is a schematic process diagram which shows an example of the manufacturing method of the metal structure of this disclosure. It is the schematic of the metal structure formation original plate during manufacturing of the metal structure formation original plate of an Example.

The present disclosure includes, in the embodiments, a method for producing a metal structure original plate, a method for producing a metal structure, a metal structure forming original plate, a metal structure, and a resin molded product. Hereinafter, embodiments of the present disclosure will be described with reference to drawings and the like.

However, the present disclosure can be implemented in many different embodiments and is not construed as limited to the description of the embodiments exemplified below. Further, in order to clarify the explanation, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the embodiment, but this is merely an example and the interpretation of the present disclosure is limited. It's not something to do. Further, in the present specification and each figure, the same elements as those described above with respect to the above-mentioned figures may be designated by the same reference numerals, and detailed description thereof may be omitted as appropriate. Further, for convenience of explanation, the phrase "upper" or "lower" may be used for explanation, but the vertical direction may be reversed.

Further, in the present specification, there is no particular limitation when a certain structure such as a certain member or a certain area is "above (or below)" another structure such as another member or another area. As long as this includes not only the case of being directly above (or directly below) the other configuration, but also the case of being above (or below) the other configuration, that is, separately above (or below) the other configuration. Including the case where the component of is included.

As a result of diligent studies to solve the above problems, the present inventors have formed a stepped shape of at least two steps or more by performing wet anisotropic etching on a silicon substrate having a (100) surface as a surface. According to the method, it has been found that a metal structure for forming a metal structure, which can easily and inexpensively manufacture a metal structure having a predetermined shape, can be manufactured.

I. Method for manufacturing original plate for forming metal structure (first embodiment)
The method for manufacturing the original plate for forming a metal structure of the present embodiment has a protection having a first pattern in which an opening for partially exposing the silicon substrate is arranged on the surface of a silicon substrate having a (100) surface as a surface. The step of forming the film and the first bottom surface parallel to the surface of the silicon substrate and the first bottom surface are obtained by performing wet anisotropic etching on the silicon substrate using the protective film having the first pattern as a mask. A step of forming a first recess having a first side surface having an inclination angle of 54.7 ° ± 1 ° with respect to the first bottom surface, and protection on the surface of the first recess. After forming the film, a step of forming a protective film having a second pattern on the silicon substrate in which an opening for partially exposing the silicon substrate is arranged on the first bottom surface and the second pattern are performed. Wet anisotropic etching was performed on the silicon substrate using the protective film as a mask, and the second bottom surface parallel to the surface of the silicon substrate and around the second bottom surface were arranged, and 54.7 with respect to the bottom surface. A two- or more staircase having a second side surface having an inclination angle of ° ± 1 ° and a step of forming a second recess having the second recess arranged on the first bottom surface. This is a method for manufacturing a metal structure forming original plate, which manufactures a metal structure forming original plate having a formed shape.

In the original plate for forming a metal structure of the present embodiment, the inclination angles of the first side surface and the second side surface can be easily set to the above-mentioned angles. Therefore, for example, the original plate for forming a metal structure of the above-mentioned metal structure can be used. It is possible to easily manufacture a metal structure forming original plate having a taper angle at which it is easy to separate the metal structure from the metal structure forming original plate. Further, since it is a manufacturing method using a protective film as a mask, it has an advantage that it is possible to manufacture a shape or the like with high definition. Further, since the inclination angle of each side surface can be set to a constant angle with high accuracy, there is an advantage that the shape of the opening of the mask can be accurately reflected in the shape of the bottom surface. The difference of ± 1 ° of 54.7 ° ± 1 ° is due to, for example, that the inclined surface may be uneven due to impurities contained in the silicon substrate.

Hereinafter, each step of the method for producing the original plate for forming a metal structure in the present embodiment will be described.
A. First Protective Film Forming Step This step is a step of forming a protective film having a first pattern in which an opening for partially exposing the silicon substrate is arranged on the surface of a silicon substrate having a (100) surface as a surface. is there. Specifically, as shown in FIGS. 1A to 1D, a protective film 2 is formed on the entire surface of the silicon substrate 1 having a surface (100) as a surface, and a photoresist film is formed on the protective film 2. A protective film 2'having a first pattern having an opening that partially exposes the silicon substrate 1 by forming a resist pattern 3 by forming, exposing, and developing the resist pattern 3 and etching using the resist pattern 3 as a mask. To form.

1. 1. Silicon Substrate The silicon substrate used in this step has a (100) surface on its surface. The silicon substrate having such a surface of (100) plane may be a generally used one, and for example, a silicon substrate produced by slicing from a silicon single crystal rod grown by the CZ method may be used. ..

The silicon substrate may be either an n-type or p-type doped or undoped silicon substrate.

The diameter of the silicon substrate is not particularly limited, but is easily available from about 12.7 mm (0.5 inches) to about 400 mm (16 inches), particularly from about 100 mm (4 inches) to about 200 mm (8 inches). Therefore, it is preferable. If the diameter is within such a range, many step shapes of two or more steps can be formed on one silicon substrate, and it can be used as a multi-imposed original plate of a metal structure, and can be manufactured at low cost. It becomes the original plate for forming a metal structure.

For example, the thickness of the silicon substrate is 280 ± 10 μm (2 inches in substrate diameter) to 775 ± 25 μm (12 inches in substrate diameter) according to the JEITA standard, and 279 ± 25 μm (2 inches in substrate diameter) to 775 ± 20 μm according to the SEMI standard. (Substrate diameter 12 inches) is used. This is because if the thickness is more than the above, the original plate for forming a metal structure having sufficient strength can be obtained, and the number of steps in the staircase shape can be easily set to two or more. Further, from the viewpoint of handling, it is preferably 400 μm or more.

2. Protective film The protective film may function as a mask (etching protective film) during wet anisotropic etching, and may be a silicon oxide film, a silicon nitride film, or a laminate of a silicon oxide film and a silicon nitride film. All of these protective films can be formed by the vapor phase growth method. When the protective film is a silicon oxide film, it is possible to form a film by thermal oxidation, and it is preferable because it can be easily removed in a subsequent step.

The film thickness of the protective film is preferably 50 nm or more and 2 μm or less, and more preferably 100 nm or more and 500 nm or less.
If the film thickness is within the above range, there is no possibility that the etching processing time will be long, and it is preferable because it functions sufficiently as a mask during wet anisotropic etching.

3. 3. Protective film having the first pattern The protective film having the first pattern has an opening that partially exposes the silicon substrate. The method for forming the protective film having such a first pattern is not particularly limited, but for example, a photoresist film is formed on a silicon substrate on which the protective film is formed, and the photoresist film is exposed through a photomask. It is obtained by forming a resist pattern on a photoresist film by developing with a developing solution and etching a protective film using the resist pattern as a mask.

(A) Forming of a photoresist film The photoresist film is composed of a photoresist composition, and can be usually formed by applying a photoresist composition by a spin coating method or the like and prebaking. The photoresist composition is preferably a chemically amplified resist composition, and may be either a positive type or a negative type. If a positive resist composition is used, only the resist in the exposed portion is removed during development, and if a negative resist composition is used, only the resist in the non-exposed portion is removed during development. Examples of the resist composition include a novolac-based positive resist, a cyclized rubber-based negative photoresist, and an epoxy resin-based negative photoresist. Moreover, you may use a dry film resist as a resist layer. Other examples of the resist layer coating method include a casting method, a dip coating method, a bar coating method, a blade coating method, a roll coating method, a gravure coating method, a spray coating method, and a flexographic printing method.

(B) Exposure and Development The photomask used during exposure is not particularly limited as long as it has a predetermined pattern capable of forming the shape of the first recess, which will be described later.

The exposure wavelength is generally 10 to 600 nm, preferably 190 to 500 nm. In this case, the photomask preferably shields light of the above wavelength, and may be, for example, a photomask in which a desired pattern is hollowed out. Examples of the light having the above wavelengths include light of various wavelengths generated by a radiation generator, such as ultraviolet light such as g-line, h-line, and i-line, and far-ultraviolet light (248 nm, 193 nm). .. Of these, light having a wavelength of 248 to 436 nm is particularly preferable. The exposure amount is preferably 10 to 10,000 mJ / cm ^2. In some cases, the exposure is performed by irradiating radiation through an immersion exposure solution such as water and a mask having a predetermined pattern.
After the exposure, it is preferable to perform heat treatment as needed.

As the developing solution, for example, a generally used organic alkaline developing solution can be used, or an inorganic alkaline developing solution or an aqueous solution capable of developing a resist layer can also be used. Usually, the resist pattern is formed by developing for 10 to 300 seconds, preferably 0.5 to 2 minutes, by a conventional method such as a dip method, a paddle method, or a spray method. After developing the resist layer, it is preferable to wash it with water or the like.

(C) Protective film etching process By etching the protective film using the resist pattern as a mask, a part of the silicon substrate is exposed, that is, a window opening process is performed on a portion to be a first recess, which will be described later. A protective film having the pattern of 1 can be obtained. The etching process can be performed by reactive ion etching, which has been conventionally used for dry etching of a silicon nitride film or a silicon oxide film.

In reactive ion etching, a silicon substrate on which the protective film and the resist pattern are formed is placed in a vacuum vessel having a parallel plate electrode, a reactive gas is introduced into the vacuum vessel, and then high frequency power is applied to the parallel plate electrode. This is a method in which the reactive gas is discharged by applying the above, and the protective film is etched by the reactive ions in the generated plasma to obtain a desired shape. As the reactive gas, a gas such as CF ₄ (carbon tetrafluoride) or CHF ₃ (trifluoromethane) can be used.
Further, the method for etching the protective film is not limited to dry etching, and wet etching can also be used.

B. First recess forming step As shown in FIG. 1 (E), in this step, wet anisotropic etching is performed on the silicon substrate 1 using the protective film 2'having the first pattern as a mask, and the first recess is formed. It is a step of forming 4.
Examples of the etching solution used for wet anisotropic etching include an alkaline aqueous solution. Specifically, it is an aqueous solution of tetrahydroxymethylammonium hydroxide, an aqueous solution of potassium hydroxide, an aqueous solution of sodium hydroxide, hydrazine hydrate, hydrazine and the like.

When wet anisotropic etching is performed on the (100) plane of a silicon substrate, the etching rate ratio between the (100) plane direction and the (111) plane direction becomes very large, and therefore, almost only the (100) plane direction is etched. Etching.
Therefore, the first recess is formed so that the area of the first bottom surface, which is the bottom surface of the first recess, is smaller than the area of the opening in the cross-sectional shape, and the first side surface, which is the side surface of the first recess. Has a (111) plane direction and the first bottom surface has a (100) plane direction. That is, the first side surface has an inclination angle of 54.7 ° ± 1 ° with respect to the surface of the silicon substrate and the (100) surface of the first bottom surface parallel to the surface.

The shape of the first recess in a plan view is not particularly limited and varies depending on the shape of the target metal structure, but is usually rectangular (for example, rectangular or square). The depth of the first recess and the opening width of the first recess will be described in "III. Original plate for forming a metal structure (first embodiment)" described later.

C. Second Protective Film Forming Step This step has a second pattern in which after forming a protective film on the surface of the first recess, an opening for partially exposing the silicon substrate is arranged on the first bottom surface. This is a step of forming a protective film on the silicon substrate.

Specifically, as shown in FIGS. 2 (F) to 2 (H), a protective film 5 is formed on the entire surface of the silicon substrate including the surface of the first recess, and a photoresist film is formed on the protective film 5. The resist pattern 3 is formed by exposure and development, and etching is performed using the resist pattern as a mask to partially expose the silicon substrate 1 in which the outer periphery of the opening is provided inside the outer periphery of the first bottom surface. A protective film 5'with a second pattern is formed.

1. 1. Protective film After the first recess forming step, the protective film is applied to the entire surface of the silicon substrate including the surface of the first recess by thermal oxidation or the like without removing the protective film having the first pattern. This can be done by reforming the protective film made of.

Further, after removing all the protective film having the first pattern with a hydrofluoric acid solution or the like, the protective film may be newly formed on the entire surface of the silicon substrate.
The protective film can be reformed in the same manner as in "A. First protective film forming step 2. Protective film" described above.

2. Protective film having a second pattern A protective film having a second pattern can be obtained by patterning a protective film reformed on the entire surface of a silicon substrate by photolithography. The same method as the above-mentioned "A. First protective film forming step 3. Protective film having the first pattern" can be used. However, when the photoresist film is exposed, the photomask is designed and the exposure conditions are adjusted so that the portion removed during development of the photoresist film is the portion inside the first bottom surface in a plan view. Is preferable. In addition, it is preferable to perform alignment exposure for alignment. By doing so, in a plan view, the protective film having the second pattern in which the outer circumference of the opening is provided inside the outer circumference of the first bottom surface and partially exposes the silicon substrate is accurately and reliably provided. Obtainable.

D. Second recess forming step As shown in FIG. 2 (I), in this step, wet anisotropic etching is performed on the silicon substrate using the protective film 5'having the second pattern as a mask, and the second recess 6 is formed. Is the process of forming.
As the etching solution used in this step, the same etching solution as that mentioned in the above "B. First recess forming step" can be used.

As described above, when wet anisotropic etching is performed on the (100) plane of a silicon substrate, the etching rate ratio between the (100) plane direction and the (111) plane direction becomes very large, and therefore, almost (100). Since only the surface direction is etched, the second side surface, which is the side surface of the second recess, has the (111) surface direction, and the second bottom surface, which is the bottom surface of the second recess, is (100). Has a plane direction. That is, the second side surface has an inclination angle of 54.7 ° ± 1 ° with respect to the substrate surface and the second bottom surface ((100) surface) parallel to the substrate surface.

The plan-view shape of the second bottom surface is not particularly limited and varies depending on the shape of the target metal structure, but is usually rectangular (for example, rectangular or square). The depth of the second recess and the opening width of the second recess will be described in "III. Original plate for forming a metal structure (first embodiment)" described later.

E. Others After forming the second recess, it is preferable to remove the protective film having the second pattern and the protective film formed on the back surface with a hydrofluoric acid solution.

The original plate for forming a metal structure thus produced has a stepped shape of two or more steps in which the second recess is arranged on the first bottom surface. The two or more staircase shapes may be formed on at least one side surface of the recess including at least the first recess and the second recess, or may be formed on all the side surfaces.

Further, in FIGS. 1 and 2, a case where one recess including the first recess and the second recess is formed is shown, but the first recess and the second recess are formed on one silicon substrate. It is also possible to use a multi-faceted original plate in which a large number of recesses including the recesses of the above are formed.

II. Method for manufacturing original plate for forming metal structure (second embodiment)
In the present embodiment, a step of forming a protective film having a first pattern in which an opening for partially exposing the silicon substrate is arranged on the surface of a silicon substrate having a (100) surface as a surface, and the first. Wet anisotropic etching is performed on the silicon substrate using the protective film having the above pattern as a mask to form a temporary recess, and the protective film arranged on the outer periphery of the temporary recess is removed to form a flat surface. A step of forming a protective film having a second pattern having an opening larger than the temporary recess on the silicon substrate, and using the protective film having the second pattern as a mask on the silicon substrate. By performing wet anisotropic etching, it is arranged around the first bottom surface parallel to the surface of the silicon substrate and the first bottom surface, and has an inclination angle of 54.7 ° ± 1 ° with respect to the first bottom surface. A first side surface having a silicon substrate, a first recess having a silicon substrate, a second bottom surface formed on the first bottom surface and parallel to the surface of the silicon substrate, and a second bottom surface arranged around the second bottom surface, with respect to the bottom surface. A step of simultaneously forming a second side surface having an inclination angle smaller than 54.7 ° and a second recess having the second recess is arranged on the first bottom surface. Provided is a method for manufacturing a metal structure forming original plate, which manufactures a metal structure forming original plate having a stepped shape of steps or more.

Hereinafter, each step of the method for producing the original plate for forming a metal structure in the present embodiment will be described.
A. First Protective Film Forming Step In this step, a protective film having a first pattern in which an opening for partially exposing the silicon substrate is arranged is formed on the surface of a silicon substrate having a (100) surface as a surface. 1 Protective film forming step.

Specifically, as shown in FIGS. 3A to 3D, a protective film 2 is formed on the entire surface of the silicon substrate 1 having a surface (100) as a surface, and a photoresist film is formed on the protective film 2. 3 is formed and exposed, developed, and etched to form a protective film 2'having a first pattern having an opening that partially exposes the silicon substrate 1.

The silicon substrate used in this step, the protective film to be formed, and the photoresist film have been described in the above-mentioned "I. Manufacturing method of original plate for forming metal structure (first embodiment) A. First protective film forming step". You can use something similar to the one.

B. Temporary recess forming step As shown in FIG. 3 (E), in this step, wet anisotropic etching is performed on the silicon substrate 1 using the protective film 2'having the first pattern as a mask to form the temporary recess 7. This is the process of forming.
As the etching solution used for wet anisotropic etching, the same etching solution as described in "I. Method for producing original plate for forming metal structure (first embodiment) B. First recess forming step" is used. be able to.

Similar to the first embodiment, when wet anisotropic etching is performed on the (100) plane of the silicon substrate, the etching rate ratio between the (100) plane direction and the (111) plane direction becomes very large, and therefore most of them ( 100) Etched only in the plane direction. Therefore, the side surface of the temporary recess has a (111) plane direction, and has an inclination angle of 54.7 ° ± 1 ° with respect to the bottom surface ((100) plane) of the recess.

The shape of the bottom surface of the temporary recess is not particularly limited, and is, for example, usually rectangular (for example, rectangular or square). Here, the bottom surface of the temporary recess refers to a region of the bottom surface of the temporary recess composed of the (100) surface of the silicon substrate.

Regarding the depth of the temporary recess and the opening width of the temporary recess, the first recess described in "I. Manufacturing method of original plate for forming a metal structure (first embodiment) B. First recess forming step" described above. Since it is the same as the above, the description here is omitted.

C. Second protective film forming step In this step, the protective film arranged on the outer peripheral portion of the temporary recess is removed, and the protective film has a second pattern having an opening larger than the temporary recess in a plan view. Is a step of forming on the silicon substrate.

Specifically, as shown in FIGS. 4 (F) to 4 (H), the photoresist film 3 is formed on the protective film having the first pattern, and is exposed, developed, and etched to obtain the first pattern. The outer peripheral portion of the opening of the protective film having a pattern is removed, and the outer periphery of the opening is provided outside the opening region of the temporary recess in a plan view, and has an opening that partially exposes the silicon substrate 1. A protective film 5'having a pattern of 2 is formed.

After the recess forming step, the protective film having the second pattern forms a photoresist film on the protective film having the first pattern, and is exposed and developed to form a resist pattern, and masks the resist pattern. It can be obtained by subjecting it to etching. These specific methods are the same as the above-mentioned "I. Method for manufacturing original plate for forming metal structure (first embodiment) A. First protective film forming step 3. Protective film having first pattern". Can be. However, it is preferable to design the photomask so that the portion of the photoresist film removed during development during exposure is larger than the opening region of the temporary recess in a plan view, and adjust the exposure conditions. In addition, it is preferable to perform alignment exposure for alignment. By doing so, it is possible to accurately and reliably obtain a protective film having a second pattern in which the outer periphery of the opening is provided outside the opening region of the first recess and the silicon substrate is partially exposed. Can be done.

Further, as described above, the protective film having the second pattern is preferably obtained by partially removing the protective film having the first pattern, but in some cases, the first concave portion is described above. After the forming step, all the protective film having the first pattern may be removed, the protective film may be reformed, and the protective film may be etched to form the protective film having the second pattern. Further, the protective film having the first pattern may not be removed after the first recess forming step, but the protective film may be re-formed on the entire surface and etched to form the protective film having the second pattern. ..

D. First concave portion and second concave portion forming step As shown in FIG. 4 (I), this step is performed by performing wet anisotropic etching on a silicon substrate using a protective film 5'having a second pattern as a mask. , Is a step of forming the first recess 4 and the second recess 6 at the same time.
As the etching solution used in this step, the same etching solution as that mentioned in "I. Manufacturing method of original plate for forming metal structure (first embodiment) B. First recess forming step" can be used.

The original plate for forming a metal structure manufactured in this way has a stepped shape of two or more steps in which the second recess is arranged on the first bottom surface.

The depth of the first recess, the opening width of the first recess, the depth of the second recess, and the opening width of the second recess are described in "III. Original plate for forming a metal structure (first embodiment)" described later. ) ”.

As described above, when wet anisotropic etching is performed on the (100) plane of a silicon substrate, the etching rate ratio between the (100) plane direction and the (111) plane direction becomes very large, and therefore, almost (100). Since only the plane direction is etched, the first side surface has a (111) plane direction, that is, an inclination angle of 54.7 ° ± 1 ° with respect to the bottom surface ((100) plane) of the first recess. Will have.

On the other hand, the second side surface of the second recess has an angle smaller than 54.7 ° with respect to the surface of the silicon substrate or the (100) surface which is the second bottom surface, specifically, 53.6 ° to 11. It has a tilt angle in the range of 2 °, more preferably in the range of 33.0 ° to 18.5 °.

The present inventors have found that the inclination angle of the second side surface varies depending on the etching depth in this step (second etching), and more specifically, the deeper the etching depth in this step, the more the first. It was found that the inclination angles of the two sides tend to be smaller. Such a fluctuation tendency of the inclination angle of the second side surface can be grasped by creating a calibration curve in advance. Therefore, by adjusting the etching depth in this step, the inclination angle of the second side surface can be adjusted, and the shape of the metal structure can also be adjusted.

III. Original plate for forming a metal structure (first embodiment)
In the present embodiment, the surface of the silicon substrate having the surface (100) is arranged around the first bottom surface parallel to the surface of the silicon substrate and the first bottom surface, and 54. A first recess having a first side surface having an inclination angle of 7 ° ± 1 °, a second bottom surface arranged on the first bottom surface and parallel to the surface of the silicon substrate, and the second bottom surface. It has a second side surface that is arranged around and has an inclination angle of 54.7 ° ± 1 ° with respect to the bottom surface, and has a second recess, which is formed by the first recess and the second recess. Provided is an original plate for forming a metal structure in which two or more steps are formed.

The original plate for forming a metal structure of the present embodiment will be described in detail with reference to FIG. 5 (A) and 5 (B) are a top view and a schematic cross-sectional view showing an example of the original plate for forming a metal structure of the present embodiment. As shown in FIG. 5, the original plate 10 for forming a metal structure communicates with a first recess 4 and a first recess 4 in a silicon substrate 1 having a (100) surface as a surface, and is viewed in a plan view. A second recess 6 provided inside the recess of 1 is formed, and a step shape of two or more steps including the first recess 4 and the second recess 6 is formed. is there. FIG. 5C is manufactured using the original plate for forming a metal structure of the present disclosure in which a plurality of recesses including the first recess and the second recess described in FIGS. 5A and 5B are formed. A schematic top view of a petri dish, which is a resin molded product molded by using the metal structure as a mold, is shown.

In the present embodiment, the first side surface 4a and the second side surface 6a have an inclination angle of 54.7 ° ± 1 ° (respectively) with respect to the first bottom surface and the second bottom surface ((100) surface of the silicon substrate), respectively. , Angle α, angle β) in FIG.

The shape of the second bottom surface in a plan view and the shape of the first bottom surface including the second recess in the plan view are not particularly limited, but are usually rectangular (for example, rectangular or square).

The opening width and depth of the first recess are appropriately set according to the use of the metal structure, and are not particularly limited. However, the original plate for forming a metal structure of the present embodiment is described above. Since it can be manufactured by lithography technology, etching, etc., it is possible to miniaturize the pattern of the recesses. The depth of the first recess is the distance in the vertical direction from the surface of the silicon substrate on the recess side to the first bottom surface, and refers to the distance shown in FIG. 5 (h1). The depth (h1) of the first recess is preferably 0.1 μm to 750 μm, particularly preferably 1 μm to 750 μm, and particularly preferably 10 μm to 200 μm. This is because, within the above range, the design can form a recessed structure capable of accommodating cells forming spheroids and cells such as a fertilized egg, and an uneven shape capable of responding such as cell orientation.

The opening width of the first recess is the width in the longitudinal direction of the opening region of the first recess in a plan view, and refers to the distance shown in FIG. 5 (X1). The opening width (X1) of the first recess has a shape of 1 μm to 100 mm in consideration of the use of the obtained metal structure and the like. If it is not more than the above upper limit value, it is possible to form a fine structure in the entire resin molded product (for example, a petri dish) when the resin molded product is finally manufactured. For example, if the opening width (X1) of the first recess is 100 mm, a fine structure can be formed on the entire petri dish having the maximum dimension (100 mm) described in JIS K 0950: 1988. On the other hand, considering the resolution of the photomask, it is preferably 20 μm or more. If it is 20 μm or more, it is not necessary to increase the resolution of the mask, and the mask manufacturing cost can be suppressed.

The opening width and depth of the second recess are appropriately set according to the use of the metal structure, and are not particularly limited. However, the original plate for forming the metal structure of the present embodiment is described above. Since it can be manufactured by lithography technology, etching, etc., it is possible to miniaturize the pattern of the recesses. The depth of the second recess is the distance in the vertical direction from the first bottom surface to the second bottom surface, and refers to the distance shown in FIG. 5 (h2). The depth (h2) of the second recess can be the same as the depth of the first recess.

The opening width of the second recess is the width in the longitudinal direction of the opening region of the second recess in a plan view, and refers to the distance shown in FIG. 5 (X2). The opening width (X2) of the second recess can be 1 μm or more and less than 100 mm in consideration of the resolution of the photomask, and is preferably in the range of 20 μm or more and less than 100 mm.

The depth and opening width of the second recess are not particularly limited, but it is preferable that the opening width (X2) and the depth (h2) satisfy the following relational expression.
(X2)> 2 × (h2) ÷ tan 54.7 °
By satisfying the above formula, the cross-sectional shape of the second recess does not become a V-groove shape, which is preferable in that a staircase shape can be formed.

As the silicon substrate on which the first recess and the second recess are formed, the above-mentioned "I. Manufacturing method of original plate for forming a metal structure (first embodiment) A. First protective film forming step 1. Silicon substrate ], Examples thereof can be mentioned.

Further, in the original plate for forming a metal structure of the present embodiment, as shown in FIG. 5, the staircase shape having two or more steps has all the side surfaces of the recess including the first recess and the second recess (in FIG. 5). It may be formed on four surfaces), and as shown in FIG. 6, a step shape having two or more steps is formed on a part of a side surface (in FIG. 6) of the recess including the first recess and the second recess. It may be formed on two sides).

The original plate for forming a metal structure of the present embodiment can be produced by the above-mentioned "I. Manufacturing method of original plate for forming a metal structure (first embodiment)".

IV. Original plate for forming a metal structure (second embodiment)
In the present embodiment, the silicon substrate having the (100) plane as a surface is arranged around the first bottom surface parallel to the surface of the silicon substrate and the first bottom surface, and is 54.7 ° with respect to the first bottom surface. A first recess having a first side surface having an inclination angle of ± 1 °, a second bottom surface arranged on the first bottom surface and parallel to the surface of the silicon substrate, and around the second bottom surface. It has a second side surface that is arranged and has an inclination angle of less than 54.7 ° with respect to the bottom surface, and has a second recess, which has two or more steps due to the first recess and the second recess. Provided is an original plate for forming a metal structure having a staircase shape.

The original plate for forming a metal structure of the present embodiment will be described in detail with reference to FIG. 7. As shown in FIG. 7, in the metal structure forming original plate 10, the first recess 4 is formed on the silicon substrate 1 having the (100) surface on the surface, and the first recess 4 is formed inside the first recess in a plan view. The provided second recess 6 is formed. Therefore, the original plate for forming a metal structure of the present embodiment has a stepped shape of two or more steps in which a first recess and a second recess communicate with each other.

In the present embodiment, the first side surface 4a has an inclination angle (angle α in FIG. 7) of 54.7 ° ± 1 ° with respect to the first bottom surface (the (100) surface of the silicon substrate). Further, the second side surface 6a has an inclination angle (angle β in FIG. 7) smaller than 54.7 ° with respect to the second bottom surface (the (100) surface of the silicon substrate), specifically 53.6 ° to 11 It has an angle of .2 °, especially 33.0 ° to 18.5 °.

The shape of the second bottom surface, the shape of the first bottom surface including the second recess, the opening width and depth of the first recess and the second recess are described in the above-mentioned "III. The same can be applied to the first embodiment).

Examples of the silicon substrate include those exemplified in the above-mentioned "I. Manufacturing method of original plate for forming a metal structure (first embodiment) A. First protective film forming step 1. Silicon substrate".

The original plate for forming a metal structure of the present embodiment can be produced by the above-mentioned "II. Method for producing an original plate for forming a metal structure (second embodiment)".

Further, the metal structure forming original plate of the present embodiment also has a stepped shape having two or more steps, like the metal structure forming original plate of the first embodiment, having a recess including a first recess and a second recess. It may be formed on all side surfaces, or may be formed on a part of the side surface of the recess including the first recess and the second recess.

V. Method for Manufacturing Metal Structure In the present disclosure, a method for manufacturing a metal structure, further comprising a step of manufacturing a metal structure original plate by the above-mentioned method for manufacturing a metal structure forming original plate, and the above-mentioned metal structure manufacturing method. A metal characterized by having a step of depositing a metal on a forming master plate by a plating treatment to form a metal structure, and a step of separating the metal structure from the metal structure forming master plate. A method for manufacturing a structure is provided.

A. Metal structure forming original plate manufacturing process This step includes the above-mentioned "I. Metal structure forming original plate manufacturing method (first embodiment)" and "II. Metal structure forming original plate manufacturing method (second embodiment)". Form) ”is a step of manufacturing the original plate 10 for forming a metal structure shown in FIG. 8 (A).

B. Metal deposition step As shown in FIG. 8B, this step is a step of depositing metal on the metal structure forming master plate by plating to form the metal structure 11.

The plating method for depositing metal is not particularly limited, and examples thereof include electrolytic plating and electroless plating. The metal used is not particularly limited, and examples thereof include nickel, copper, and gold, and nickel is preferably used from the viewpoint of economy, durability, and the like. The metal structure may be polished depending on its surface condition.

C. Metal structure separation step As shown in FIG. 8C, this step is a step of separating the metal structure 11 from the metal structure forming original plate 10. The metal structure separated in this way has a step structure of at least two steps or more, and the inclination angle of each step portion is about 54.7 ° or smaller than about 54.7 °. Therefore, when the metal structure is separated, there is little risk of damage.

According to the method for producing a metal structure of the present disclosure, it is possible to easily and inexpensively produce a metal structure having a fine structure. Details of the metal structure manufactured by such a method will be described in "VI. Metal Structure" described later.

VI. Metal Structure The metal structure of the present disclosure is a metal substrate, a first top surface that protrudes from the metal substrate and is parallel to the surface of the metal substrate, and is arranged around the first top surface, with respect to the surface of the metal substrate. , A first side wall surface having an inclination angle of 54.7 ° ± 1 °, a first convex portion having, and a second top surface protruding from the first top surface and parallel to the first top surface. , A second side wall surface arranged around the second top surface, and a second convex portion having the first convex portion and the second convex portion, two or more stairs. The shape is constructed.

A. First Embodiment The metal structure of the present embodiment is, for example, at least a metal substrate, a first convex portion protruding from the metal substrate, and a second convex portion protruding from the top surface of the first convex portion. It is a metal structure in which a step structure of two or more steps including a portion is formed, and the first side wall surface has an inclination angle of 54.7 ° ± 1 ° with respect to the plane direction of the metal substrate. An inclined surface is formed, and the second side wall surface forms an inclined surface having an inclination angle of 54.7 ° ± 1 ° with respect to the first top surface.

B. Second Embodiment As another embodiment, the first side wall surface forms an inclined surface having an inclination angle of 54.7 ° ± 1 ° with respect to the plane direction of the metal substrate, and the second side wall surface has a second side wall surface. An inclined surface having an inclination angle smaller than 54.7 ° with respect to the top surface of the convex portion of 1 can be mentioned.

C. Others The cross-sectional shapes of the first convex portion and the second convex portion in the first embodiment and the second embodiment are both tapered shapes, and the inclination angle of the metal substrate with respect to the plane direction is the above-mentioned angle.

Such a metal structure is the above-mentioned "V. metal structure" using the above-mentioned "III. Original plate for forming a metal structure (first embodiment)" and "IV. Original plate for forming a metal structure (second embodiment)". It can be manufactured by the "manufacturing method of the body".
Therefore, the first convex portion and the second convex portion of the metal structure of the present embodiment correspond to the first concave portion and the second concave portion of the original plate for forming the metal structure, respectively. The height and width of the convex portion 1 and the second convex portion can also be set to values that can be formed by the first concave portion and the second concave portion of the metal structure forming original plate.
Further, since the metal structure of the present embodiment has a tapered shape as described above, there is little risk of damage when the metal structure is separated from the original plate for forming the metal structure.

Examples of the metal constituting the metal structure include the same as those described in "V. Manufacturing method of metal structure B. Metal deposition process".

The use of the metal structure of the present disclosure is not particularly limited, but it can be used, for example, as a mold for injection molding, a mold for press molding, monomer cast molding, solvent cast molding, a roll transfer method by extrusion molding, or the like. ..

VII. Manufacturing Method of Resin Molded Product In the present disclosure, which is a manufacturing method of a resin molded product, a metal structure is manufactured by the above-mentioned manufacturing method of a metal structure, and the above metal structure is used as an injection molding mold to form a resin. Provided is a method for producing a resin molded product, which obtains a resin molded product by injecting and molding the product in a fluid state.
Specifically, it can be obtained by using the metal structure described in the above "VI. Metal structure" as a mold for injection molding, injecting a resin in a fluid state, and molding the resin. Therefore, the first recess and the second recess of the resin molded product of the present disclosure correspond to the first convex portion and the second convex portion of the metal structure, respectively, and the resin molded product to be manufactured. The opening width and depth of the first concave portion and the second concave portion of the metal structure can be set to values that can be formed by the first convex portion and the second convex portion of the metal structure.

The resin is basically not particularly limited and may be a known resin. It may be selected according to the required physical properties and cost of the product. For thermoplastic resins, ABS (acrylonitrile-butadiene-styrene copolymer) resin, polycarbonate resin, styrene resin, acrylic resin, vinyl chloride resin, polyolefin resin such as polyethylene resin and polypropylene resin, polyester resin, polylactic acid resin , Cycloolefin copolymer (COC), cycloolefin polymer (COP) and the like. Further, if it is a curable resin, it is a two-component curable resin, for example, an uncured resin solution such as a urethane resin, an unsaturated polyester resin, or an epoxy resin.
The thermoplastic resin is melted by heating and injected in a fluid state, and the curable resin (the uncured product) is injected in a fluid state by heating at room temperature or appropriately.

The above resin may be appropriately added with various known additives such as colorants, silica, alumina, talc, calcium carbonate, aluminum hydroxide and other inorganic powders, glass fiber fillers, stabilizers, lubricants and the like. The agent may be contained.

VIII. Resin molded product In the present disclosure, the resin substrate is arranged on the first bottom surface parallel to the surface of the resin substrate and around the first bottom surface, and has an inclination angle of 54.7 ° ± 1 ° with respect to the first bottom surface. A first side surface having a surface, a first recess having a surface, a second bottom surface arranged on the first bottom surface and parallel to the surface of the resin substrate, and a second side surface arranged around the second bottom surface. Provided is a resin molded product having a second recess having a, and having a stepped shape of two or more steps formed by the first recess and the second recess.

The resin molded product of the present disclosure includes a first embodiment in which the inclination angle of the second side surface is 54.7 ° ± 1 ° and a second embodiment in which the inclination angle of the second side surface is smaller than 54.7 °. ..
The resin molded product of the present disclosure can be manufactured by the above-mentioned "VII. Method for manufacturing a resin molded product". By using the above-mentioned metal structure as a mold, a resin molded product having a fine structure can be obtained.

The use of the resin molded product of the present disclosure is not particularly limited, but it can be used, for example, as a three-dimensional cell culture container, a micropattern cell culture container, a microwell fertilized egg culture container, or the like.

The present disclosure is not limited to the above embodiments. The above embodiment is an example, and any object having substantially the same structure as the technical idea described in the claims of the present disclosure and exhibiting the same effect and effect is the present invention. Included in the technical scope of the disclosure.

Examples are shown below, and the present disclosure will be described in more detail.
(Example)
An original plate for forming a metal structure was manufactured by the method shown in FIGS. 3 and 4. Specifically, a silicon substrate having a (100) surface on its surface was prepared (FIG. 3 (A)). The prepared silicon substrate was thermally oxidized to form an etching protective film composed of thermal oxide films on both sides (FIG. 3 (B)). Next, a photoresist film is formed on the etching protective film, exposure and development steps are performed to form a resist pattern (FIG. 3 (C)), and the resist pattern is used as a mask to form a concave portion on the protective film by the etching step. A protective film having the first pattern was formed by opening the window of the portion (FIG. 3 (D)).

Next, wet anisotropic etching was performed with an etching solution to form a temporary recess (FIG. 3 (E)). The depth of the temporary recess was 5 μm. Further, a photoresist film was formed, and a resist pattern was formed by exposure and development (FIG. 4 (F)). At this time, alignment exposure was performed so as to form a new pattern including the first concave region. Using the resist pattern as a mask, a new window opening process was performed on the protective film to form a protective film having the first pattern (FIGS. 4 (G) and 4 (H)). By performing wet anisotropic etching with an etching solution, a first recess and a second recess included inside the first recess in a plan view were formed at the same time (FIG. 4 (I)). The depth of both the first recess and the second recess was 5 μm. Finally, the etching protective film was removed with a hydrofluoric acid solution.

By the above method, a staircase structure having a depth of 5 μm in the first recess and a depth of 5 μm in the second recess was formed on the silicon substrate, and the inclination angle of the side surface of each recess was measured. α): 54.7 °, second recess (β): smaller than 54.7 ° and 25.7 ° or more, and the inclination angle of the side surface was different between the first recess and the second recess.

In addition, in FIG. 9, after forming a temporary recess (FIG. 9 (A)), after forming the first recess and the second recess at the same time (FIG. 9 (B)), the original plate for forming a metal structure. The change in the cross-sectional shape of is shown.
From this result, the inclination angle of the second side surface varies depending on the etching depth in the second etching. More specifically, the deeper the etching depth in the second etching, the more the inclination of the second side surface is inclined. It was found that the horns tended to be smaller.

1 ... Silicon substrate 2 ... First protective film 2'... Protective film with first pattern 3 ... Resist film 4 ... First recess 5 ... Second protective film 5'... Protective film with second pattern 6 ... Second recess 7 ... Temporary recess 10 ... Original plate for forming metal structure 11 ... Metal structure

Claims (12)

(100) A step of forming a protective film having a first pattern in which an opening for partially exposing the silicon substrate is arranged on the surface of a silicon substrate having a surface as a surface.
Wet anisotropic etching is performed on the silicon substrate using the protective film having the first pattern as a mask, and the silicon substrate is arranged on the first bottom surface parallel to the surface of the silicon substrate and around the first bottom surface. A step of forming a first recess having a first side surface having an inclination angle of 54.7 ° ± 1 ° with respect to the first bottom surface, and a step of forming the first recess.
After forming a protective film on the surface of the first recess, a protective film having a second pattern in which an opening for partially exposing the silicon substrate is arranged on the first bottom surface is formed on the silicon substrate. Process and
Wet anisotropic etching is performed on the silicon substrate using the protective film having the second pattern as a mask, and the second bottom surface is arranged parallel to the surface of the silicon substrate and around the second bottom surface. It has a second side surface having an inclination angle of 54.7 ° ± 1 ° with respect to the bottom surface, and a step of forming a second recess having the second side surface.
A method for producing a metal structure-forming original plate, which comprises producing a metal structure-forming original plate having two or more steps formed by arranging the second recess on the first bottom surface. (100) A step of forming a protective film having a first pattern in which an opening for partially exposing the silicon substrate is arranged on the surface of a silicon substrate having a surface as a surface.
A step of forming a temporary recess by performing wet anisotropic etching on the silicon substrate using the protective film having the first pattern as a mask.
A step of removing the protective film arranged on the outer peripheral portion of the temporary recess and forming a protective film having a second pattern having an opening larger than the temporary recess on the silicon substrate in a plan view. ,
By performing wet anisotropic etching on the silicon substrate using the protective film having the second pattern as a mask, it is arranged on the first bottom surface parallel to the surface of the silicon substrate and around the first bottom surface. , A first recess having a first side surface having an inclination angle of 54.7 ° ± 1 ° with respect to the first bottom surface, and a second surface formed on the first bottom surface and parallel to the surface of the silicon substrate. It has a step of simultaneously forming a bottom surface and a second recess having a second side surface arranged around the second bottom surface and having an inclination angle smaller than 54.7 ° with respect to the bottom surface. ,
A method for producing a metal structure-forming original plate, which comprises producing a metal structure-forming original plate having two or more steps formed by arranging the second recess on the first bottom surface. The metal structure formation according to claim 1 or 2, wherein the protective film having the first pattern and the protective film having the second pattern are formed by etching processing using a photomask. Manufacturing method of original plate. The metal according to any one of claims 1 to 3, wherein the protective film is a silicon oxide film, a silicon nitride film, or a laminate of a silicon oxide film and a silicon nitride film. A method for manufacturing an original plate for forming a structure. The method for producing a master plate for forming a metal structure according to any one of claims 1 to 4, wherein the wet anisotropic etching is performed using an alkaline aqueous solution as an etching solution. The metal structure for forming the metal structure according to any one of claims 1 to 5, wherein the protective film having the second pattern is removed after the second recess is formed. How to make the original plate. It is a method of manufacturing a metal structure.
A step of manufacturing a metal structure forming original plate by the method for manufacturing a metal structure forming original plate according to any one of claims 1 to 6.
A step of depositing metal by plating on the original plate for forming a metal structure to form a metal structure,
A step of separating the metal structure from the original plate for forming the metal structure, and
A method for producing a metal structure, which comprises. It is a manufacturing method of resin molded products.
A metal structure is manufactured by the method for manufacturing a metal structure according to claim 7.
A method for producing a resin molded product, which comprises using the metal structure as a mold for injection molding, injecting a resin in a fluid state, and molding the resin to obtain a resin molded product. (100) On the surface of a silicon substrate having a surface on the surface,
A first surface having a first bottom surface parallel to the surface of the silicon substrate and a first side surface arranged around the first bottom surface and having an inclination angle of 54.7 ° ± 1 ° with respect to the first bottom surface. A second bottom surface which is arranged in the recess and the first bottom surface and is parallel to the surface of the silicon substrate, and is arranged around the second bottom surface and has an inclination of 54.7 ° ± 1 ° with respect to the second bottom surface. It has a second side surface with corners and a second recess with.
An original plate for forming a metal structure, in which two or more steps are formed by the first recess and the second recess. (100) On a silicon substrate having a surface as a surface,
A first surface having a first bottom surface parallel to the surface of the silicon substrate and a first side surface arranged around the first bottom surface and having an inclination angle of 54.7 ° ± 1 ° with respect to the first bottom surface. A second bottom surface arranged in the recess and the first bottom surface parallel to the surface of the silicon substrate, and an inclination angle smaller than 54.7 ° with respect to the second bottom surface arranged around the second bottom surface. Has a second side surface, and has a second recess, which has.
An original plate for forming a metal structure, in which two or more steps are formed by the first recess and the second recess. Metal substrate,
A first top surface that protrudes from the metal substrate and is parallel to the surface of the metal substrate, and is arranged around the first top surface and has an inclination angle of 54.7 ° ± 1 ° with respect to the surface of the metal substrate. A first convex portion having one side wall surface, a second top surface protruding from the first top surface and parallel to the first top surface, and a second side arranged around the second top surface. Consists of a wall surface and a second convex portion having
A metal structure in which two or more steps are formed by the first convex portion and the second convex portion. On the resin substrate, a first bottom surface parallel to the surface of the resin substrate, a first side surface arranged around the first bottom surface and having an inclination angle of 54.7 ° ± 1 ° with respect to the first bottom surface, and A second recess having a first recess having a structure, a second bottom surface arranged on the first bottom surface and parallel to the surface of the resin substrate, and a second side surface arranged around the second bottom surface. Have,
A resin molded product in which two or more steps are formed by the first recess and the second recess.

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