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JP2021026868A - Light source device - Google Patents

Light source device Download PDF

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JP2021026868A
JP2021026868A JP2019143096A JP2019143096A JP2021026868A JP 2021026868 A JP2021026868 A JP 2021026868A JP 2019143096 A JP2019143096 A JP 2019143096A JP 2019143096 A JP2019143096 A JP 2019143096A JP 2021026868 A JP2021026868 A JP 2021026868A
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closed container
curved surface
light source
surface portion
source device
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Inventor
芳紀 大西
Yoshinori Onishi
芳紀 大西
明浩 小松
Akihiro Komatsu
明浩 小松
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority to JP2019143096A priority Critical patent/JP2021026868A/en
Priority to KR1020190157248A priority patent/KR102807822B1/en
Priority to US16/814,418 priority patent/US11128097B2/en
Publication of JP2021026868A publication Critical patent/JP2021026868A/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70025Production of exposure light, i.e. light sources by lasers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70033Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70075Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Plasma Technology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lasers (AREA)

Abstract

【課題】劣化を抑制し,寿命を伸ばすことができる光源装置を提供すること。【解決手段】光源装置100は,レーザー光を受ける半球形状または半楕円球形状の第1曲面部111と,第1曲面部111と対向する半球形状または半楕円球形状の第2曲面部113と,第1曲面部111と第2曲面部113とを接続する筒部112とを備える密閉容器101と,密閉容器101内に封入されたアシストガス103と,密閉容器101の外から第1曲面部111にレーザー光を照射する光源102と,を備える。【選択図】図1PROBLEM TO BE SOLVED: To provide a light source device capable of suppressing deterioration and extending a life. A light source device 100 includes a hemispherical or semi-elliptical first curved surface portion 111 that receives laser light, and a hemispherical or semi-elliptical spherical second curved surface portion 113 that faces the first curved surface portion 111. , A closed container 101 having a tubular portion 112 connecting the first curved surface portion 111 and the second curved surface portion 113, an assist gas 103 sealed in the closed container 101, and a first curved surface portion from the outside of the closed container 101. A light source 102 that irradiates the 111 with a laser beam is provided. [Selection diagram] Fig. 1

Description

本発明は光源装置に関し,例えば,無電極型のLPP光源に適用可能な光源装置に関する。 The present invention relates to a light source device, for example, a light source device applicable to an electrodeless LPP light source.

検査機光源または半導体露光装置であるEUV(Extreme Ultraviolet)光源として,LPP(laser-produced plasma)光源が検討されている。LPP光源は,液体又は気体のターゲット材料にレーザー光を集光照射することにより,レーザー光を照射されてプラズマ化したターゲット材料からEUV光が放射される光源である。 An LPP (laser-produced plasma) light source is being studied as an inspection machine light source or an EUV (Extreme Ultraviolet) light source which is a semiconductor exposure apparatus. The LPP light source is a light source that emits EUV light from a target material that has been turned into plasma by being irradiated with laser light by condensing and irradiating a liquid or gas target material with laser light.

例えば,特許文献1には,球形のターゲットバルブにガスが封入され,ガスにレーザー光を照射させ,励起されたガスからプラズマ光を発光させるプラズマ発光装置が記載されている。 For example, Patent Document 1 describes a plasma light emitting device in which a gas is sealed in a spherical target bulb, the gas is irradiated with laser light, and plasma light is emitted from the excited gas.

特開2017−204442号公報Japanese Unexamined Patent Publication No. 2017-20442

高輝度のLPP光源では,その発光体が高温化に晒され,光学部品,それらを支持する筐体および発光体(バルブ)が過酷な環境にさらされる。このような過酷な環境は,装置メンテナンス周期や寿命期間に影響する。 In a high-brightness LPP light source, the illuminant is exposed to high temperatures, and the optical components, the housing supporting them, and the illuminant (bulb) are exposed to a harsh environment. Such a harsh environment affects the equipment maintenance cycle and lifespan.

したがって,光源の寿命を延ばすことが求められていた。 Therefore, it has been required to extend the life of the light source.

一実施形態の光源装置は,レーザー光を受ける半球形状または半楕円球形状の第1曲面部と,前記第1曲面部と対向する半球形状または半楕円球形状の第2曲面部と,前記第1曲面部と前記第2曲面部とを接続する筒部とを備える密閉容器と,前記密閉容器内に封入されたアシストガスと,前記密閉容器の外から前記第1曲面部にレーザー光を照射する光源と,を備えるようにした。 The light source device of one embodiment includes a hemispherical or semi-elliptical first curved surface portion that receives laser light, a hemispherical or semi-elliptical spherical second curved surface portion that faces the first curved surface portion, and the first curved surface portion. A closed container including a tubular portion connecting the first curved surface portion and the second curved surface portion, an assist gas sealed in the closed container, and a laser beam irradiating the first curved surface portion from outside the closed container. It is equipped with a light source to be used.

一実施形態の光源装置によれば,上述の第1曲面部,第2曲面部及び筒部を備えることにより,プラズマ化したアシストガスの高速気体分子流が密閉容器の壁面まで到達する距離が長くなり,壁面に到達した時点でのガスの温度が低下するので,密閉容器の壁面の温度上昇を抑制することができる。そして,密閉容器を含む光源装置の寿命を延ばすことができる。 According to the light source device of one embodiment, by providing the above-mentioned first curved surface portion, second curved surface portion, and tubular portion, the distance that the high-speed gas molecular flow of the assist gas turned into plasma reaches the wall surface of the closed container is long. As a result, the temperature of the gas decreases when it reaches the wall surface, so that the temperature rise of the wall surface of the closed container can be suppressed. Then, the life of the light source device including the closed container can be extended.

一実施形態の光源装置は,好ましくは,前記アシストガスを封入した後に前記密閉容器を閉じるチップ部を前記筒部に備えるようにしてもよい。 The light source device of one embodiment may preferably have a chip portion for closing the closed container after filling the assist gas in the tubular portion.

一実施形態の光源装置は,好ましくは,前記アシストガスを封入した後に前記密閉容器を閉じるチップ部を,レーザー光の光軸の延長上以外の前記第2曲面部に備えるようにしてもよい。 The light source device of one embodiment may preferably have a chip portion that closes the closed container after filling the assist gas in the second curved surface portion other than the extension of the optical axis of the laser beam.

一実施形態の光源装置によれば,プラズマ化したガスの流れがチップ部に当たらないので,強度の弱いチップ部での結晶化や亀裂の発生を避けることができる。 According to the light source device of one embodiment, since the flow of the plasmaized gas does not hit the chip portion, crystallization and the occurrence of cracks in the chip portion having low strength can be avoided.

一実施形態の光源装置は,好ましくは,前記光源からのレーザー光を反射させ,前記密閉容器の前記第1曲面部にレーザー光を照射させるミラーを備え,前記第1曲面部の曲面形状は,前記レーザー光が垂直に入射する形状であるようにしてもよい。 The light source device of one embodiment preferably includes a mirror that reflects the laser light from the light source and irradiates the first curved surface portion of the closed container with the laser beam, and the curved surface shape of the first curved surface portion is. The shape may be such that the laser beam is vertically incident.

一実施形態の光源装置によれば,このような形状とすることにより,レーザー光が第1曲面部111で屈折することなく,密閉容器で集光することができる。この結果,集光時にレーザー光の減衰(散乱)を抑制することができる。 According to the light source device of one embodiment, such a shape allows the laser light to be focused in a closed container without being refracted by the first curved surface portion 111. As a result, the attenuation (scattering) of the laser beam can be suppressed at the time of focusing.

一実施形態の光源装置は,好ましくは,前記アシストガスが,Ar,Kr,Xe,He,Ne,N,Br,Cl,I,HO,O,H,CH,NO,NO,CHOH,COH,CO,NH,1以上の金属ハロゲン化物,Ne/Xe混合物,Ar/Xe混合物,Kr/Xe混合物,Ar/Kr/Xe混合物,ArHg混合物,KrHg混合物,およびXeHg混合物の少なくとも1つを含むようにしてもよい。 In the light source device of one embodiment, preferably, the assist gas is Ar, Kr, Xe, He, Ne, N 2 , Br 2 , Cl 2 , I 2 , H 2 O, O 2 , H 2 , CH 4. , NO, NO 2 , CH 3 OH, C 2 H 5 OH, CO 2 , NH 3 , 1 or more metal halides, Ne / Xe mixture, Ar / Xe mixture, Kr / Xe mixture, Ar / Kr / Xe mixture , ArHg mixture, KrHg mixture, and XeHg mixture may contain at least one of them.

本発明の光源装置は,劣化を抑制し,寿命を伸ばすことができる。 The light source device of the present invention can suppress deterioration and extend the life.

実施の形態1にかかる光源装置の断面図である。It is sectional drawing of the light source apparatus which concerns on Embodiment 1. FIG. 球形状の密閉容器におけるアシストガスの挙動の一例を示す略図である。It is a schematic diagram which shows an example of the behavior of the assist gas in a spherical closed container. 実施の形態1の密閉容器101におけるアシストガスの挙動の一例を示す略図である。It is a schematic diagram which shows an example of the behavior of the assist gas in the closed container 101 of Embodiment 1. FIG. ガラスの温度と核形成速度及び成長速度との関係を示すグラフである。It is a graph which shows the relationship between the temperature of glass, the nucleation rate, and the growth rate. レーザーのCW(Continuous wave)パワーと密閉容器の温度との関係を示すグラフである。It is a graph which shows the relationship between the CW (Continuous wave) power of a laser, and the temperature of a closed container. レーザーのCWパワーとUV(Ultraviolet)パワーとの関係を示すグラフである。It is a graph which shows the relationship between the CW power of a laser, and UV (Ultraviolet) power. 実施の形態2にかかる光源装置の断面図である。It is sectional drawing of the light source apparatus which concerns on Embodiment 2. FIG. 他の実施の形態にかかる光源装置の密閉容器の断面図である。It is sectional drawing of the closed container of the light source device which concerns on another embodiment. 他の実施の形態にかかる光源装置の密閉容器の断面図である。It is sectional drawing of the closed container of the light source device which concerns on another embodiment. 他の実施の形態にかかる光源装置の密閉容器の断面図である。It is sectional drawing of the closed container of the light source device which concerns on another embodiment.

実施の形態1
以下,図面を参照して本発明の実施の形態について説明する。図1は,実施の形態1にかかる光源装置の断面図である。図1において,光源装置100は,密閉容器101と,光源102と,アシストガス103を備える。
Embodiment 1
Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view of the light source device according to the first embodiment. In FIG. 1, the light source device 100 includes a closed container 101, a light source 102, and an assist gas 103.

密閉容器101は,アシストガス103が封入された密閉容器である。密閉容器101は,レーザー光及び励起されたアシストガスが発する光を透過する材料で形成されている。例えば,密閉容器101の材料は,石英材料またはサファイア材料であってもよい。具体的には,密閉容器101の材料は,ガラス材料であることが望ましい。密閉容器101の材料は,特に溶融石英ガラス材料を含むことが望ましい。そして,密閉容器101は,形状で区別すると,第1曲面部111と,筒部112と,第2曲面部113と,チップ部114を含む。 The closed container 101 is a closed container in which the assist gas 103 is sealed. The closed container 101 is made of a material that transmits laser light and light emitted by an excited assist gas. For example, the material of the closed container 101 may be a quartz material or a sapphire material. Specifically, it is desirable that the material of the closed container 101 is a glass material. It is desirable that the material of the closed container 101 particularly contains a fused silica glass material. The closed container 101 includes a first curved surface portion 111, a tubular portion 112, a second curved surface portion 113, and a tip portion 114 when distinguished by shape.

第1曲面部111は,密閉容器101の外からレーザー光を受ける部分である。第1曲面部111は,レーザー光をロスなく透過させる形状であることが望ましい。すなわち,第1曲面部111は,レーザー光と直交する形状であることが望ましい。たとえば,第1曲面部111は,半球形状または半楕円球形状であることが望ましい。 The first curved surface portion 111 is a portion that receives laser light from the outside of the closed container 101. It is desirable that the first curved surface portion 111 has a shape that allows laser light to pass through without loss. That is, it is desirable that the first curved surface portion 111 has a shape orthogonal to the laser beam. For example, the first curved surface portion 111 is preferably hemispherical or semi-elliptical.

筒部112は,第1曲面部111と第2曲面部113とを接続する筒形状の部分である。例えば,第1曲面部111と第2曲面部113が半球形状である場合,筒部112は,中空の円筒形状または半楕円球形状であることが望ましい。 The tubular portion 112 is a tubular portion that connects the first curved surface portion 111 and the second curved surface portion 113. For example, when the first curved surface portion 111 and the second curved surface portion 113 have a hemispherical shape, it is desirable that the tubular portion 112 has a hollow cylindrical shape or a semi-elliptical spherical shape.

第2曲面部113は,密閉容器101内のアシストガス103を対流しやすい形状であることが望ましい。たとえば,第2曲面部113は,半球形状であってもよい。第2曲面部113は,第1曲面部111に対向するように位置している。 It is desirable that the second curved surface portion 113 has a shape that facilitates convection of the assist gas 103 in the closed container 101. For example, the second curved surface portion 113 may have a hemispherical shape. The second curved surface portion 113 is located so as to face the first curved surface portion 111.

チップ部114は,密閉容器101の形状を整形する際に吹き込む開口部を閉じたものである。チップ部114から密閉容器101内にアシストガス103を導入した後,開口を閉じることになる。したがってチップ部114は密閉容器101の他の部分よりも強度が弱い部分である。 The tip portion 114 closes the opening to be blown when shaping the shape of the closed container 101. After introducing the assist gas 103 into the closed container 101 from the tip portion 114, the opening is closed. Therefore, the tip portion 114 is a portion having a weaker strength than the other portions of the closed container 101.

したがって,チップ部114はレーザー光が直接照射されない位置に形成することが望ましい。例えば,チップ部114は,図1に示すように筒部112に形成されても良い。また,チップ部114は,レーザー光の光軸以外の第2曲面部113に形成されてもよい。 Therefore, it is desirable that the chip portion 114 is formed at a position where the laser beam is not directly irradiated. For example, the tip portion 114 may be formed on the tubular portion 112 as shown in FIG. Further, the chip portion 114 may be formed on the second curved surface portion 113 other than the optical axis of the laser beam.

光源102は,アシストガス103を励起するレーザー光を発する光源である。光源102の発するレーザー光の波長はアシストガス103を励起する波長であればいずれであってもよい。また光源102は一般的なレーザー光を発する装置が適用できる。光源102は,密閉容器101の第1曲面部111にレーザー光を照射できる位置及び方向に設置される。また,光源102は,必要に応じてミラー,レンズ等の光学素子を備えるようにしてもよい。なお,図1において,光源102は実際の形状ではなく機能ブロックとして表現している。 The light source 102 is a light source that emits a laser beam that excites the assist gas 103. The wavelength of the laser light emitted by the light source 102 may be any wavelength as long as it excites the assist gas 103. Further, a device that emits a general laser beam can be applied to the light source 102. The light source 102 is installed at a position and a direction in which the laser beam can be applied to the first curved surface portion 111 of the closed container 101. Further, the light source 102 may be provided with optical elements such as a mirror and a lens, if necessary. In FIG. 1, the light source 102 is represented not as an actual shape but as a functional block.

アシストガス103は,レーザー光の照射によってプラズマ化するガスである。例えば,アシストガス103は,Ar,Kr,Xe,He,Ne,N,Br,Cl,I,HO,O,H,CH,NO,NO,CHOH,COH,CO,NH,1以上の金属ハロゲン化物,Ne/Xe混合物,Ar/Xe混合物,Kr/Xe混合物,Ar/Kr/Xe混合物,ArHg混合物,KrHg混合物,およびXeHg混合物の少なくとも1つを含むガスであってもよい。具体的には,アシストガス103は,キセノンが好適である。アシストガス103は,作動ガスまたは電離ガスとも呼ばれることがある。また,アシストガス103は,温度の低下した状態で固体状態であってもよい。 The assist gas 103 is a gas that is turned into plasma by irradiation with laser light. For example, the assist gas 103, Ar, Kr, Xe, He , Ne, N 2, Br 2, Cl 2, I 2, H 2 O, O 2, H 2, CH 4, NO, NO 2, CH 3 OH , C 2 H 5 OH, CO 2 , NH 3 , 1 or more metal halides, Ne / Xe mixture, Ar / Xe mixture, Kr / Xe mixture, Ar / Kr / Xe mixture, ArHg mixture, KrHg mixture, and XeHg It may be a gas containing at least one of the mixtures. Specifically, xenon is preferably used as the assist gas 103. The assist gas 103 may also be referred to as a working gas or an ionized gas. Further, the assist gas 103 may be in a solid state in a state where the temperature is lowered.

以上の構成により,光源は,光を発する。次に密閉容器101内のアシストガスの挙動について,従来の球形状の密閉容器と比較して説明する。図2は,球形状の密閉容器におけるアシストガスの挙動の一例を示す略図である。また,図3は,実施の形態1の密閉容器101におけるアシストガスの挙動の一例を示す略図である。 With the above configuration, the light source emits light. Next, the behavior of the assist gas in the closed container 101 will be described in comparison with the conventional spherical closed container. FIG. 2 is a schematic diagram showing an example of the behavior of the assist gas in the spherical closed container. Further, FIG. 3 is a schematic diagram showing an example of the behavior of the assist gas in the closed container 101 of the first embodiment.

図2において,密閉容器内のアシストガスは,レーザー光の照射によりプラズマ化する。そしてプラズマ化したガスは励起したエネルギーの一部を光として放出すると共に,プラズマ荷電粒子であるガスは直ちに再結合を受ける。そしてガスは,ロケット作用により高速分子流となり,レーザー光の光軸方向(図2のZ軸正の方向)に進み,密閉容器のガラス壁面に向かう。このガスは,密閉容器の壁面に到達するまでにランダムに動く他の気体分子と衝突する確率(または回数)が低い。したがって,ガスはエネルギーをあまり奪われない状態で密閉容器の壁面に到達する。 In FIG. 2, the assist gas in the closed container is turned into plasma by irradiation with laser light. Then, the plasma-generated gas emits a part of the excited energy as light, and the gas, which is a plasma-charged particle, is immediately recombined. Then, the gas becomes a high-speed molecular flow by the rocket action, travels in the optical axis direction of the laser beam (the Z-axis positive direction in FIG. 2), and heads toward the glass wall surface of the closed container. This gas has a low probability (or number of times) of colliding with other gas molecules that move randomly before reaching the wall surface of the closed container. Therefore, the gas reaches the wall surface of the closed container without being deprived of much energy.

この高速分子流となったガスは,密閉容器のガラス壁面に到達すると同時に多くの運動エネルギーを失い,ガラスを加熱して低温気体分子へと還元される。このように,ガスは,運動エネルギーの一部が熱に変換されることにより密閉容器の壁面に伝熱する。その後,ガスは容器壁面に沿うように対流する。 The gas that has become this high-speed molecular flow loses a lot of kinetic energy as soon as it reaches the glass wall surface of the closed container, heats the glass, and is reduced to low-temperature gas molecules. In this way, the gas transfers heat to the wall surface of the closed container by converting part of the kinetic energy into heat. The gas then convects along the wall of the vessel.

このように,密閉容器においてガスが到達する部位は,最も高温な場所になる。ただし,密閉容器内のアシストガスも含めて温度を比較すると,局所的に生成されるプラズマ部位が最も高温である。ただし,このプラズマ部位からガラス壁面への輻射による加熱は少ないと考えられる。 In this way, the part where the gas reaches in the closed container is the hottest place. However, when comparing the temperatures including the assist gas in the closed container, the locally generated plasma part has the highest temperature. However, it is considered that there is little heating due to radiation from this plasma part to the glass wall surface.

一方,図3に示すように,密閉容器101内のアシストガス103は,レーザー光によりプラズマ化し,光を発する点では同じである。しかし密閉容器101は球形状の密閉容器に比べてガスの移動方向に長い形状である。したがって,ガスは,ロケット作用により密閉容器の壁面に到達するまでにランダムに動く他の気体分子と衝突する確率(または回数)は,図2に比べて高い。この結果,ガスは,他の気体分子との衝突によりエネルギーを奪われた状態で密閉容器の壁面に到達する。そして,ガスが密閉容器101の壁面に到達している時点で既にエネルギーを奪われているので,ガスが密閉容器の壁面に伝熱するエネルギーは,図2に比べて少ない。その後,ガスは容器壁面に沿うように対流する。 On the other hand, as shown in FIG. 3, the assist gas 103 in the closed container 101 is the same in that it is converted into plasma by laser light and emits light. However, the closed container 101 has a shape longer in the gas moving direction than the spherical closed container. Therefore, the probability (or the number of times) that the gas collides with other gas molecules that move randomly before reaching the wall surface of the closed container by rocket action is higher than that in FIG. As a result, the gas reaches the wall surface of the closed container in a state of being deprived of energy by collision with other gas molecules. Since the energy has already been deprived when the gas reaches the wall surface of the closed container 101, the energy transferred to the wall surface of the closed container is less than that in FIG. The gas then convects along the wall of the vessel.

実際に図2と図3の形状の密閉容器にアシストガスを封入してレーザー光を照射したところ,図2の球形状の密閉容器では,1000時間未満で密閉容器のガラスが結晶化して白濁する症状が現れた。そして結晶部分に亀裂が生じてしまった。図2の密閉容器では,高速粒子のガスが,ガラス組成の変質に足るエネルギーを持ち合わせ,高温条件と共に,ガラスの結晶化を促すことが考えられる。また,ガラス特有の塑性変形領域を超えると,ガラスは脆くなる。この結果,高圧の密閉容器が破裂に至る虞がある。また,球形状の密閉容器では光学的なデザイン上,ガス封止のチップ部は頭頂部に位置するので,ガラスの結晶化が特に強度に影響する。 When the assist gas was actually sealed in the closed containers of the shapes shown in FIGS. 2 and 3 and irradiated with laser light, the glass of the closed container crystallized and became cloudy in less than 1000 hours in the spherical closed container of FIG. Symptoms appeared. And a crack was generated in the crystal part. In the closed container of FIG. 2, it is considered that the gas of high-speed particles has enough energy for the alteration of the glass composition and promotes the crystallization of the glass under high temperature conditions. Moreover, when the plastic deformation region peculiar to glass is exceeded, the glass becomes brittle. As a result, the high-pressure airtight container may burst. In addition, in a spherical airtight container, the gas-sealed tip is located on the crown due to the optical design, so crystallization of glass particularly affects the strength.

一方,図3の密閉容器101では,アシストガス103が密閉容器101の壁面に到達するまでの距離が長い分,アシストガス103が他の気体分子と衝突する確率(または回数)が高く,アシストガス103が運動エネルギーをより多く失うことになる。この結果,図3の密閉容器101では,壁面の温度が,図2の密閉容器より低い(すなわち温度上昇幅が小さい)。 On the other hand, in the closed container 101 of FIG. 3, since the distance until the assist gas 103 reaches the wall surface of the closed container 101 is long, the probability (or the number of times) that the assist gas 103 collides with other gas molecules is high, and the assist gas 103 will lose more kinetic energy. As a result, in the closed container 101 of FIG. 3, the temperature of the wall surface is lower than that of the closed container of FIG. 2 (that is, the temperature rise width is small).

次に,密閉容器の壁面温度について説明する。図4は,ガラスの温度と核形成速度及び成長速度との関係を示すグラフである。図4において,縦軸はガラス中での核形成速度及び成長速度を示し,横軸はガラスの温度を示す。図4に示すように,ガラスの温度が転移温度より高くなると,核形成が進行する。そして,さらにガラスの温度が上昇すると,ガラスに結晶化が進行する。この結果,非晶質であるガラスが結晶化してしまう。そして,ガラスは強度を保てなくなり破損に至る。したがって,密閉容器の壁面温度はできる限り低いことが望ましい。 Next, the wall surface temperature of the closed container will be described. FIG. 4 is a graph showing the relationship between the temperature of glass and the nucleation rate and growth rate. In FIG. 4, the vertical axis shows the nucleation rate and the growth rate in the glass, and the horizontal axis shows the temperature of the glass. As shown in FIG. 4, when the temperature of the glass becomes higher than the transition temperature, nucleation proceeds. Then, when the temperature of the glass rises further, crystallization progresses in the glass. As a result, the amorphous glass crystallizes. Then, the glass cannot maintain its strength and is damaged. Therefore, it is desirable that the wall surface temperature of the closed container is as low as possible.

図5は,レーザーのCW(Continuous wave)パワーと密閉容器の温度との関係を示すグラフである。図5において,縦軸は密閉容器の温度(℃)であり,横軸は密閉容器に照射するレーザーのCWパワー(W)を示す。 FIG. 5 is a graph showing the relationship between the CW (Continuous wave) power of the laser and the temperature of the closed container. In FIG. 5, the vertical axis represents the temperature (° C.) of the closed container, and the horizontal axis represents the CW power (W) of the laser irradiating the closed container.

図5に示すように,従来の球形状の密閉容器では,CWパワーを2500Wとした時点で,密閉容器の壁面温度が650℃−750℃に達している。一方,実施の形態1の光学装置の密閉容器101では,CWパワーを2500Wとした時点で,壁面温度が350℃以下である。また,CWパワーを4000Wにあげても,密閉容器101の壁面温度が450℃程度である。したがって,実施の形態1の光学装置では,従来の球形状の密閉容器に比べて,密閉容器の壁面温度を250℃以上,下げることができている。 As shown in FIG. 5, in the conventional spherical closed container, the wall surface temperature of the closed container reaches 650 ° C.-750 ° C. when the CW power is 2500 W. On the other hand, in the closed container 101 of the optical device of the first embodiment, the wall surface temperature is 350 ° C. or lower when the CW power is 2500 W. Further, even if the CW power is raised to 4000 W, the wall surface temperature of the closed container 101 is about 450 ° C. Therefore, in the optical device of the first embodiment, the wall surface temperature of the closed container can be lowered by 250 ° C. or more as compared with the conventional spherical closed container.

図6は,レーザーのCWパワーとUV(Ultraviolet)パワーとの関係を示すグラフである。図6において,縦軸は発光するUVパワー(W)であり,横軸は密閉容器に照射するレーザーのCWパワー(W)を示す。 FIG. 6 is a graph showing the relationship between the CW power of the laser and the UV (Ultraviolet) power. In FIG. 6, the vertical axis represents the UV power (W) that emits light, and the horizontal axis represents the CW power (W) of the laser that irradiates the closed container.

図5と共に図6を参照すると,球形状の密閉容器の場合,CWパワーを2500Wとした時点で,密閉容器の壁面温度が650℃−750℃に達してしまう。これ以上の温度上昇は密閉容器の破損につながるので,CWパワーを上げることが困難である。この時点でのUVパワーは240W程度であり,発光するUVパワーをさらに上げることが困難である。 Referring to FIG. 6 together with FIG. 5, in the case of a spherical closed container, the wall surface temperature of the closed container reaches 650 ° C.-750 ° C. when the CW power is 2500 W. It is difficult to increase the CW power because a further temperature rise leads to damage to the closed container. The UV power at this point is about 240 W, and it is difficult to further increase the UV power emitted.

一方,実施の形態1の光学装置の密閉容器101では,CWパワーを4000Wにあげても,密閉容器101の壁面温度が450℃程度であるが,UVパワーは340Wにも達する。したがって,実施の形態1の光学装置は,密閉容器101の壁面温度が球形状の密閉容器より低く,且つ発光するUVパワーは壁面温度が球形状の密閉容器の場合よりも高い。また,密閉容器101の壁面温度は,ガラスの軟化点、結晶化点温度を大幅に下回るので,密閉容器101の寿命を延ばすことができる。 On the other hand, in the closed container 101 of the optical device of the first embodiment, even if the CW power is raised to 4000 W, the wall surface temperature of the closed container 101 is about 450 ° C., but the UV power reaches 340 W. Therefore, in the optical device of the first embodiment, the wall surface temperature of the closed container 101 is lower than that of the spherical closed container, and the UV power emitted is higher than that of the closed container having a spherical wall temperature. Further, since the wall surface temperature of the closed container 101 is significantly lower than the softening point and crystallization point temperatures of the glass, the life of the closed container 101 can be extended.

このように,実施の形態1の光学装置によれば,上述の第1曲面部,第2曲面部及び筒部を備えることにより,プラズマ化したアシストガスの高速気体分子流が密閉容器の壁面まで到達する距離が長くなり,壁面に到達した時点でのガスの温度が低下するので,密閉容器の壁面の温度上昇を抑制することができる。そして,密閉容器を含む光源装置の寿命を延ばすことができる。また,実施の形態1の光学装置によれば,密閉容器の壁面の温度上昇を抑制すると共に,密閉容器を破損せずに発光するUVパワーを更に上昇させることができる。 As described above, according to the optical device of the first embodiment, by providing the above-mentioned first curved surface portion, second curved surface portion and tubular portion, the high-speed gas molecular flow of the assist gas turned into plasma reaches the wall surface of the closed container. Since the reachable distance becomes longer and the temperature of the gas at the time of reaching the wall surface decreases, it is possible to suppress the temperature rise of the wall surface of the closed container. Then, the life of the light source device including the closed container can be extended. Further, according to the optical device of the first embodiment, it is possible to suppress the temperature rise of the wall surface of the closed container and further increase the UV power that emits light without damaging the closed container.

また,実施の形態1の光学装置によれば,プラズマ化したガスの流れがチップ部に当たらないので,強度の弱いチップ部での結晶化や亀裂の発生を避けることができる。 Further, according to the optical device of the first embodiment, since the flow of the plasmaized gas does not hit the chip portion, crystallization and the occurrence of cracks in the chip portion having low strength can be avoided.

実施の形態2
実施の形態2では,光学系にレンズ及びミラーを含む具体的な光学装置に適用した例について説明する。図7は,実施の形態2にかかる光源装置の断面図である。
Embodiment 2
In the second embodiment, an example applied to a specific optical device including a lens and a mirror in the optical system will be described. FIG. 7 is a cross-sectional view of the light source device according to the second embodiment.

図7において,光源装置700は,光源701と,レンズ702と,ミラー703と,ハーフミラー704と,楕円ミラー705と,密閉容器101と,レンズ706とを備える。図7において,図1と同一の構成は同じ番号を付して説明を省略する。 In FIG. 7, the light source device 700 includes a light source 701, a lens 702, a mirror 703, a half mirror 704, an elliptical mirror 705, a closed container 101, and a lens 706. In FIG. 7, the same configuration as in FIG. 1 is assigned the same number and the description thereof will be omitted.

光源701は,密閉容器101内のアシストガス103を励起するレーザー光を発する光源である。光源701はレンズ702に向かってレーザー光を発する。 The light source 701 is a light source that emits a laser beam that excites the assist gas 103 in the closed container 101. The light source 701 emits a laser beam toward the lens 702.

レンズ702は,光源701が発したレーザー光を屈折させるレンズである。例えばレンズ702は凹レンズであり,レーザー光の幅を広げても良い。 The lens 702 is a lens that refracts the laser light emitted by the light source 701. For example, the lens 702 is a concave lens, and the width of the laser beam may be widened.

ミラー703は,レンズ702を透過したレーザー光を反射するミラーである。ミラー703によりレーザー光はハーフミラー704の方向に反射する。 The mirror 703 is a mirror that reflects the laser beam transmitted through the lens 702. The laser beam is reflected by the mirror 703 in the direction of the half mirror 704.

ハーフミラー704は,ミラー703により反射されたレーザー光を透過させ,楕円ミラー705に進ませる。また,ハーフミラー704は,密閉容器101から発せられた光を反射して,レンズ706の方向に進ませる。 The half mirror 704 transmits the laser light reflected by the mirror 703 and advances to the elliptical mirror 705. Further, the half mirror 704 reflects the light emitted from the closed container 101 and advances in the direction of the lens 706.

楕円ミラー705は,ハーフミラー704を透過したレーザー光を収束させ,収束したレーザー光が密閉容器101に照射されるようにするミラーである。 The elliptical mirror 705 is a mirror that converges the laser light transmitted through the half mirror 704 so that the converged laser light is irradiated to the closed container 101.

レンズ706は,密閉容器101から発せられた光を平行光に屈折させる。この光は検査機等に用いられる。 The lens 706 refracts the light emitted from the closed container 101 into parallel light. This light is used for inspection machines and the like.

このように実施の形態2の光源装置によれば,集光したレーザー光を密閉容器に照射することにより出力の大きいレーザー光を照射でき,その結果,発光の出力を増加できる。 As described above, according to the light source device of the second embodiment, by irradiating the closed container with the focused laser light, it is possible to irradiate the laser light having a large output, and as a result, the output of the light emission can be increased.

また,第1曲面部111の曲面形状は,楕円ミラー705により反射したレーザー光が垂直に入射する形状であることが望ましい。例えば,第1曲面部111の曲面形状は,半球形状とすることが望ましい。このような形状とすることにより,レーザー光が第1曲面部111で屈折することなく,密閉容器101内で集光することができる。この結果,集光時にレーザー光の減衰(散乱)を抑制することができる。 Further, it is desirable that the curved surface shape of the first curved surface portion 111 is a shape in which the laser light reflected by the elliptical mirror 705 is vertically incident. For example, it is desirable that the curved surface shape of the first curved surface portion 111 is a hemispherical shape. With such a shape, the laser light can be focused in the closed container 101 without being refracted by the first curved surface portion 111. As a result, the attenuation (scattering) of the laser beam can be suppressed at the time of focusing.

なお,本発明は上記実施の形態に限られたものではなく,趣旨を逸脱しない範囲で適宜変更することが可能である。例えば,筒部は,光軸方向での断面形状が直線,曲線のいずれであってもよい。図8は,他の実施の形態にかかる光源装置の密閉容器の断面図である。図8の密閉容器101は,第2曲面部113の開口径が,第1曲面部111の開口径より大きい。そして,筒部112の開口が第1曲面部111の開口及び第2曲面部113の開口に対応する大きさとなっており,筒部112は,頂点部分をカットした円錐形状を有している。 The present invention is not limited to the above embodiment, and can be appropriately modified without departing from the spirit. For example, the cross-sectional shape of the tubular portion in the optical axis direction may be either a straight line or a curved line. FIG. 8 is a cross-sectional view of a closed container of the light source device according to another embodiment. In the closed container 101 of FIG. 8, the opening diameter of the second curved surface portion 113 is larger than the opening diameter of the first curved surface portion 111. The opening of the tubular portion 112 has a size corresponding to the opening of the first curved surface portion 111 and the opening of the second curved surface portion 113, and the tubular portion 112 has a conical shape with the apex portion cut off.

また,図8の筒部112は側面が曲面形状であってもよい。図9は,他の実施の形態にかかる光源装置の密閉容器の断面図である。図9では図8と同様に第2曲面部113の開口径が,第1曲面部111の開口径より大きい。そして,筒部112の開口が第1曲面部111の開口及び第2曲面部113の開口に対応する大きさとなっている。ただし,図9では,筒部112は,曲面形状の中空の筒形状を有している。 Further, the tubular portion 112 of FIG. 8 may have a curved side surface. FIG. 9 is a cross-sectional view of a closed container of the light source device according to another embodiment. In FIG. 9, the opening diameter of the second curved surface portion 113 is larger than the opening diameter of the first curved surface portion 111, as in FIG. The opening of the tubular portion 112 has a size corresponding to the opening of the first curved surface portion 111 and the opening of the second curved surface portion 113. However, in FIG. 9, the tubular portion 112 has a curved hollow tubular shape.

また,チップ部114は,筒部112以外に設けてもよい。具体的には,第2曲面部113のうち,レーザー光によってアシストガスが高速分子気流となって衝突する領域以外であればよい。すなわち,第2曲面部113のうち,レーザー光の光軸の延長上以外の領域であればよい。図10は,他の実施の形態にかかる光源装置の密閉容器の断面図である。図10において,チップ部114は,第2曲面部113上に設けられている。具体的には,第2曲面部の半球形状の中心からZ軸方向に対する角度αが0度より大きく且つ90度以下であることが好ましい。 Further, the tip portion 114 may be provided in addition to the tubular portion 112. Specifically, it may be a region other than the region of the second curved surface portion 113 where the assist gas becomes a high-speed molecular air flow due to the laser light and collides. That is, it may be a region other than the extension of the optical axis of the laser beam in the second curved surface portion 113. FIG. 10 is a cross-sectional view of a closed container of the light source device according to another embodiment. In FIG. 10, the chip portion 114 is provided on the second curved surface portion 113. Specifically, it is preferable that the angle α from the center of the hemispherical shape of the second curved surface portion in the Z-axis direction is larger than 0 degrees and 90 degrees or less.

100,700 光源装置
101 密閉容器
102,701 光源
103 アシストガス
111 第1曲面部
112 筒部
113 第2曲面部
114 チップ部
702,706 レンズ
703 ミラー
704 ハーフミラー
705 楕円ミラー
100,700 Light source device 101 Sealed container 102,701 Light source 103 Assist gas 111 First curved surface part 112 Tube part 113 Second curved surface part 114 Chip part 702,706 Lens 703 Mirror 704 Half mirror 705 Elliptical mirror

Claims (5)

レーザー光を受ける半球形状または半楕円球形状の第1曲面部と,前記第1曲面部と対向する半球形状または半楕円球形状の第2曲面部と,前記第1曲面部と前記第2曲面部とを接続する筒部とを備える密閉容器と,
前記密閉容器内に封入されたアシストガスと,
前記密閉容器の外から前記第1曲面部にレーザー光を照射する光源と,を備える光源装置。
A hemispherical or semi-elliptical first curved surface portion that receives a laser beam, a hemispherical or semi-elliptical spherical second curved surface portion that faces the first curved surface portion, and the first curved surface portion and the second curved surface portion. A closed container with a tubular part that connects the parts, and
The assist gas sealed in the closed container and
A light source device including a light source that irradiates the first curved surface portion with laser light from the outside of the closed container.
前記アシストガスを封入した後に前記密閉容器を閉じるチップ部を前記筒部に備える請求項1に記載の光源装置。 The light source device according to claim 1, wherein the cylinder portion is provided with a chip portion that closes the closed container after filling the assist gas. 前記アシストガスを封入した後に前記密閉容器を閉じるチップ部を,レーザー光の光軸の延長上以外の前記第2曲面部に備える請求項1に記載の光源装置。 The light source device according to claim 1, wherein a chip portion that closes the closed container after filling the assist gas is provided on the second curved surface portion other than the extension of the optical axis of the laser beam. 前記光源からのレーザー光を反射させ,前記密閉容器の前記第1曲面部にレーザー光を照射させるミラーを備え,
前記第1曲面部の曲面形状は,前記レーザー光が垂直に入射する形状である請求項1から3のいずれかに記載の光源装置。
A mirror that reflects the laser light from the light source and irradiates the first curved surface portion of the closed container with the laser light is provided.
The light source device according to any one of claims 1 to 3, wherein the curved surface shape of the first curved surface portion is a shape in which the laser beam is vertically incident.
前記アシストガスが,Ar,Kr,Xe,He,Ne,N,Br,Cl,I,HO,O,H,CH,NO,NO,CHOH,COH,CO,NH,1以上の金属ハロゲン化物,Ne/Xe混合物,Ar/Xe混合物,Kr/Xe混合物,Ar/Kr/Xe混合物,ArHg混合物,KrHg混合物,およびXeHg混合物の少なくとも1つを含む請求項1から4のいずれかに記載の光源装置。 It said assist gas, Ar, Kr, Xe, He , Ne, N 2, Br 2, Cl 2, I 2, H 2 O, O 2, H 2, CH 4, NO, NO 2, CH 3 OH, C 2 H 5 OH, CO 2 , NH 3 , 1 or more metal halides, Ne / Xe mixture, Ar / Xe mixture, Kr / Xe mixture, Ar / Kr / Xe mixture, ArHg mixture, KrHg mixture, and XeHg mixture The light source device according to any one of claims 1 to 4, which includes at least one.
JP2019143096A 2019-08-02 2019-08-02 Light source device Pending JP2021026868A (en)

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