JP2020526911A - リピータ欠陥検出 - Google Patents
リピータ欠陥検出 Download PDFInfo
- Publication number
- JP2020526911A JP2020526911A JP2019568762A JP2019568762A JP2020526911A JP 2020526911 A JP2020526911 A JP 2020526911A JP 2019568762 A JP2019568762 A JP 2019568762A JP 2019568762 A JP2019568762 A JP 2019568762A JP 2020526911 A JP2020526911 A JP 2020526911A
- Authority
- JP
- Japan
- Prior art keywords
- die
- images
- image
- inspection
- controller
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007547 defect Effects 0.000 title claims abstract description 64
- 238000001514 detection method Methods 0.000 title claims description 13
- 230000004927 fusion Effects 0.000 claims abstract description 51
- 238000007689 inspection Methods 0.000 claims description 90
- 238000000034 method Methods 0.000 claims description 36
- 238000005259 measurement Methods 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 39
- 239000004065 semiconductor Substances 0.000 description 20
- 238000013500 data storage Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000003252 repetitive effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000000513 principal component analysis Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 235000006719 Cassia obtusifolia Nutrition 0.000 description 1
- 235000014552 Cassia tora Nutrition 0.000 description 1
- 244000201986 Cassia tora Species 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- UJXZVRRCKFUQKG-UHFFFAOYSA-K indium(3+);phosphate Chemical compound [In+3].[O-]P([O-])([O-])=O UJXZVRRCKFUQKG-UHFFFAOYSA-K 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/001—Industrial image inspection using an image reference approach
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T5/00—Image enhancement or restoration
- G06T5/50—Image enhancement or restoration using two or more images, e.g. averaging or subtraction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/0008—Industrial image inspection checking presence/absence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/20—Special algorithmic details
- G06T2207/20212—Image combination
- G06T2207/20221—Image fusion; Image merging
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/20—Special algorithmic details
- G06T2207/20212—Image combination
- G06T2207/20224—Image subtraction
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Quality & Reliability (AREA)
- Biochemistry (AREA)
- Computer Hardware Design (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Immunology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Signal Processing (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Image Processing (AREA)
Abstract
Description
Claims (20)
- コントローラを用い複数個のダイ画像を統計的に融合することでダイ融合画像を形成するステップであり、各ダイ画像が別々のダイのものであり且つ当該複数個のダイ画像に複数個の検査チャネルからの画像が含まれるステップと、
上記コントローラを用い上記ダイ融合画像におけるリピータ欠陥の存在を検出するステップと、
を有する方法。 - 請求項1に記載の方法であって、上記検出に統計的画像処理を用いる方法。
- 請求項1に記載の方法であって、上記統計的な融合において信号が融合される方法。
- 請求項1に記載の方法であって、上記統計的な融合において信号対雑音比が融合される方法。
- 請求項1に記載の方法であって、上記複数個の検査チャネルに明視野検査チャネル及び暗視野検査チャネルが含まれる方法。
- 請求項1に記載の方法であって、各ダイ画像が単一ウェハのものである方法。
- 請求項1に記載の方法であって、更に、上記コントローラを用い背景を減ずるステップと、上記コントローラを用い背景雑音に関しスケーリングするステップと、を有する方法。
- 請求項1に記載の方法であって、上記複数個のダイ画像に少なくとも3個のダイ画像が含まれる方法。
- 請求項1に記載の方法であって、上記ダイ画像が、レーザ検査及び広帯域プラズマ検査のうち少なくとも一方を用い形成される方法。
- プログラムが格納された非一時的コンピュータ可読媒体であって、
複数個のダイ画像を統計的に融合することでダイ融合画像を形成すること、但し各ダイ画像を別々のダイのものとし且つ当該複数個のダイ画像に複数個の検査チャネルからの画像を含めること、並びに
上記ダイ融合画像におけるリピータ欠陥の存在を検出すること、
をプロセッサに指令するようそのプログラムが構成されている非一時的コンピュータ可読媒体。 - 請求項10に記載の非一時的コンピュータ可読媒体であって、上記リピータ欠陥が統計的画像処理を用い検出される非一時的コンピュータ可読媒体。
- 請求項10に記載の非一時的コンピュータ可読媒体であって、信号を融合させることで上記複数個のダイ画像が統計的に融合される非一時的コンピュータ可読媒体。
- 請求項10に記載の非一時的コンピュータ可読媒体であって、信号対雑音比を融合させることで上記複数個のダイ画像が統計的に融合される非一時的コンピュータ可読媒体。
- 請求項10に記載の非一時的コンピュータ可読媒体であって、上記複数個の検査チャネルに明視野検査チャネル及び暗視野検査チャネルが含まれる非一時的コンピュータ可読媒体。
- 請求項10に記載の非一時的コンピュータ可読媒体であって、各ダイ画像が単一ウェハのものである非一時的コンピュータ可読媒体。
- 請求項10に記載の非一時的コンピュータ可読媒体であって、上記プログラムが、更に、背景を減じること並びに背景雑音に関しスケーリングすることを上記プロセッサに指令するよう構成されている非一時的コンピュータ可読媒体。
- 請求項10に記載の非一時的コンピュータ可読媒体であって、上記複数個のダイ画像に少なくとも3個のダイ画像が含まれる非一時的コンピュータ可読媒体。
- ウェハを保持するよう構成されたチャックと、
上記チャック上のウェハを検査するよう構成されており、少なくとも2個の検査チャネルを有する計測システムと、
プロセッサ、メモリ及び通信ポートを有し上記計測システムと電子通信するコントローラと、
を備え、上記コントローラが、
複数個のダイ画像を統計的に融合することでダイ融合画像を形成するよう、但し各ダイ画像を別々のダイのものとし且つ当該複数個のダイ画像に上記少なくとも2個の検査チャネルそれぞれからの画像を含めるよう、並びに
上記ダイ融合画像におけるリピータ欠陥の存在を検出するよう、
構成されているシステム。 - 請求項18に記載のシステムであって、上記少なくとも2個の検査チャネルに明視野検査チャネル及び暗視野検査チャネルが含まれるシステム。
- 請求項18に記載のシステムであって、レーザ走査型検査システム及び広帯域プラズマ検査システムのうち一方であるシステム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762530699P | 2017-07-10 | 2017-07-10 | |
US62/530,699 | 2017-07-10 | ||
US15/704,900 US10957033B2 (en) | 2017-07-10 | 2017-09-14 | Repeater defect detection |
US15/704,900 | 2017-09-14 | ||
PCT/US2018/041178 WO2019014077A1 (en) | 2017-07-10 | 2018-07-08 | DETECTION OF REPEATER DEFECTS |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2020526911A true JP2020526911A (ja) | 2020-08-31 |
JP2020526911A5 JP2020526911A5 (ja) | 2021-08-19 |
JP7073413B2 JP7073413B2 (ja) | 2022-05-23 |
Family
ID=64903357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019568762A Active JP7073413B2 (ja) | 2017-07-10 | 2018-07-08 | リピータ欠陥検出 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10957033B2 (ja) |
EP (1) | EP3635772A4 (ja) |
JP (1) | JP7073413B2 (ja) |
KR (1) | KR102356945B1 (ja) |
CN (1) | CN110870053B (ja) |
TW (1) | TWI760523B (ja) |
WO (1) | WO2019014077A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110208284B (zh) * | 2019-05-27 | 2021-09-17 | 武汉中导光电设备有限公司 | 一种多通道缺陷合并分析的方法及系统 |
US11710227B2 (en) * | 2020-06-19 | 2023-07-25 | Kla Corporation | Design-to-wafer image correlation by combining information from multiple collection channels |
US11810284B2 (en) * | 2020-08-21 | 2023-11-07 | Kla Corporation | Unsupervised learning for repeater-defect detection |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005277395A (ja) * | 2004-02-23 | 2005-10-06 | Nano Geometry Kenkyusho:Kk | パターン検査装置および方法 |
JP2007149055A (ja) * | 2005-05-19 | 2007-06-14 | Nano Geometry Kenkyusho:Kk | パターン検査装置および方法 |
JP2015096866A (ja) * | 2009-01-26 | 2015-05-21 | ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation | ウエハ上の欠陥を検出するためのシステムおよび方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI345054B (en) * | 2003-05-30 | 2011-07-11 | Ebara Corp | Specimen inspection device and method, and method for making a semiconductor device using such specimen inspection device and method |
US20050105791A1 (en) * | 2003-10-29 | 2005-05-19 | Lee Ken K. | Surface inspection method |
KR100598381B1 (ko) | 2004-06-18 | 2006-07-07 | 삼성전자주식회사 | 인-라인 타입의 자동 웨이퍼결함 분류장치 및 그 제어방법 |
EP1766363A2 (en) * | 2004-07-12 | 2007-03-28 | Negevtech Ltd. | Multi mode inspection method and apparatus |
US7729529B2 (en) * | 2004-12-07 | 2010-06-01 | Kla-Tencor Technologies Corp. | Computer-implemented methods for detecting and/or sorting defects in a design pattern of a reticle |
US7711177B2 (en) * | 2006-06-08 | 2010-05-04 | Kla-Tencor Technologies Corp. | Methods and systems for detecting defects on a specimen using a combination of bright field channel data and dark field channel data |
US7796804B2 (en) * | 2007-07-20 | 2010-09-14 | Kla-Tencor Corp. | Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer |
US8126255B2 (en) | 2007-09-20 | 2012-02-28 | Kla-Tencor Corp. | Systems and methods for creating persistent data for a wafer and for using persistent data for inspection-related functions |
US8605275B2 (en) * | 2009-01-26 | 2013-12-10 | Kla-Tencor Corp. | Detecting defects on a wafer |
CN103210482B (zh) * | 2010-08-09 | 2016-06-22 | Bt成像股份有限公司 | 持久性特征检测 |
US9279774B2 (en) * | 2011-07-12 | 2016-03-08 | Kla-Tencor Corp. | Wafer inspection |
US9311698B2 (en) | 2013-01-09 | 2016-04-12 | Kla-Tencor Corp. | Detecting defects on a wafer using template image matching |
US9766186B2 (en) * | 2014-08-27 | 2017-09-19 | Kla-Tencor Corp. | Array mode repeater detection |
US9766187B2 (en) * | 2014-08-27 | 2017-09-19 | Kla-Tencor Corp. | Repeater detection |
US9816940B2 (en) | 2015-01-21 | 2017-11-14 | Kla-Tencor Corporation | Wafer inspection with focus volumetric method |
-
2017
- 2017-09-14 US US15/704,900 patent/US10957033B2/en active Active
-
2018
- 2018-07-08 WO PCT/US2018/041178 patent/WO2019014077A1/en unknown
- 2018-07-08 JP JP2019568762A patent/JP7073413B2/ja active Active
- 2018-07-08 KR KR1020207003424A patent/KR102356945B1/ko active Active
- 2018-07-08 CN CN201880044655.5A patent/CN110870053B/zh active Active
- 2018-07-08 EP EP18832428.9A patent/EP3635772A4/en active Pending
- 2018-07-09 TW TW107123615A patent/TWI760523B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005277395A (ja) * | 2004-02-23 | 2005-10-06 | Nano Geometry Kenkyusho:Kk | パターン検査装置および方法 |
JP2007149055A (ja) * | 2005-05-19 | 2007-06-14 | Nano Geometry Kenkyusho:Kk | パターン検査装置および方法 |
JP2015096866A (ja) * | 2009-01-26 | 2015-05-21 | ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation | ウエハ上の欠陥を検出するためのシステムおよび方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201909115A (zh) | 2019-03-01 |
US10957033B2 (en) | 2021-03-23 |
KR20200018703A (ko) | 2020-02-19 |
EP3635772A1 (en) | 2020-04-15 |
JP7073413B2 (ja) | 2022-05-23 |
US20190012778A1 (en) | 2019-01-10 |
EP3635772A4 (en) | 2021-03-10 |
CN110870053A (zh) | 2020-03-06 |
CN110870053B (zh) | 2023-09-15 |
WO2019014077A1 (en) | 2019-01-17 |
KR102356945B1 (ko) | 2022-02-08 |
TWI760523B (zh) | 2022-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10504213B2 (en) | Wafer noise reduction by image subtraction across layers | |
JP6826121B2 (ja) | 外れ値検出を通じた特徴選択及び自動処理窓監視 | |
US7570800B2 (en) | Methods and systems for binning defects detected on a specimen | |
JP7169344B2 (ja) | 透明又は半透明ウェハを対象にした欠陥検出 | |
JP7073413B2 (ja) | リピータ欠陥検出 | |
US9689805B2 (en) | Systems and methods eliminating false defect detections | |
CN109659245B (zh) | 监测光掩模缺陷率的改变 | |
US9569834B2 (en) | Automated image-based process monitoring and control | |
TW201710999A (zh) | 使用設計之預層缺陷現場審查 | |
US7243331B2 (en) | Method and system for controlling the quality of a reticle | |
CN107533994B (zh) | 自动化的基于图像的过程监测及控制 | |
JP6864738B2 (ja) | デフォーカス検出方法 | |
KR102589631B1 (ko) | 뉴슨스 맵에 기반한 광대역 플라즈마 검사 | |
JPH01119023A (ja) | 電子線露光方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210708 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210708 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20210708 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211019 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220117 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220419 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220511 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7073413 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |