JP2020161482A - Semiconductor device, display device, method of manufacturing semiconductor device, and method of manufacturing display device - Google Patents

Abstract

To provide an element, a semiconductor device, a display device, and a light emitting device, which each are made into a thin film and reduced in weight; to provide an element, a semiconductor device, a display device, and a light emitting device, which each are not easily damaged; or to provide an element, a semiconductor device, a display device, and a light emitting device, which each have flexibility.SOLUTION: There is provided an element which includes a substrate, a first resin layer formed in contact with the substrate, a second resin layer formed in contact with the first resin layer, and a first layer formed in contact with the second resin layer. The second resin layer comprises a polyimide resin as main components. At the interface between the first resin layer and the second resin layer, a substance having a mass-to-charge ratio of 1,000 or more and 1,200 or less is detected, the substance being other than a substance that is detected in LC/MS measurement of the first resin layer on an opposite side to the interface between the first resin layer and the second resin layer. There are also provided a semiconductor device, a display device and a light emitting device, respectively, in which the element is used.SELECTED DRAWING: Figure 1

Description

One aspect of the present invention relates to an element, a semiconductor device, a display device, a peeling method, and a method for manufacturing an element display device.

One aspect of the present invention is not limited to the above technical fields. The technical field of one aspect of the invention disclosed in the present specification and the like relates to a product, a method, or a manufacturing method. Alternatively, one aspect of the invention is a process, machine, manufacture, or composition (composition.
It is about (of matter). Therefore, more specifically, the technical fields of one aspect of the present invention disclosed in the present specification include semiconductor devices, display devices, liquid crystal display devices, light emitting devices, lighting devices, power storage devices, storage devices, and driving methods thereof. Alternatively, those manufacturing methods can be given as an example.

Semiconductor elements, display elements, and the like are manufactured by laminating and processing various thin films on a glass substrate. Since glass has high heat resistance and high rigidity, it is possible to manufacture various elements on the substrate, and the elements manufactured on the glass substrate are widely applied to displays and the like. Has been done.

On the other hand, a glass substrate having sufficient rigidity requires a certain thickness, and the larger the glass substrate, the heavier the weight becomes, which makes it difficult to handle. In addition, glass is fragile and vulnerable to impact, so it is easily broken.

Therefore, semiconductor devices and display devices using a resin substrate that is light and hard to break are attracting attention.

However, resins are generally sensitive to heat and often cannot withstand the heat applied to fabricate high-performance devices. In addition, there is also a problem that high-precision processing is difficult because it is easily bent, expanded and contracted.

By the way, as a semiconductor device and a display device using a resin substrate, it is possible to give a curved surface or change the shape by using a flexible substrate. This is a feature that is difficult to realize with a device using a hard and brittle glass substrate.

Such semiconductor devices and display devices are expected to be applied to various applications. For example, Patent Document 1 discloses a flexible light emitting device to which an organic EL (Electroluminescence) element is applied.

Japanese Unexamined Patent Publication No. 2014-197522

An object of one aspect of the present invention is to provide a thin film and a lightweight element, a semiconductor device, a display device, and a light emitting device, respectively. Another object of the present invention is to provide an element, a semiconductor device, a display device, and a light emitting device that are not easily damaged. Another object of the present invention is to provide an integrated element or semiconductor device. Another object of the present invention is to provide a flexible element, a semiconductor device, a display device, and a light emitting device, respectively.

An object of one aspect of the present invention is to provide a thin film, a lightweight and inexpensive element, a semiconductor device, a display device and a light emitting device, respectively. Another object of the present invention is to provide an inexpensive element, a semiconductor device, a display device, and a light emitting device that are not easily damaged. Another object of the present invention is to provide an integrated and inexpensive element and semiconductor device. Alternatively, one aspect of the present invention is an object to provide a flexible and inexpensive element, a semiconductor device, a display device, and a light emitting device.

An object of the present invention is to provide a method for manufacturing a thin film and a lightweight element, a semiconductor device, a display device, and a light emitting device, respectively. Another object of the present invention is to provide a method for manufacturing an element, a semiconductor device, a display device, and a light emitting device that are not easily damaged. Another object of the present invention is to provide a method for manufacturing an integrated element or semiconductor device. Another object of the present invention is to provide a method for manufacturing a flexible element, a semiconductor device, a display device, and a light emitting device, respectively.

An object of one aspect of the present invention is to provide a method for manufacturing a thin film, a lightweight and inexpensive element, a semiconductor device, a display device, and a light emitting device, respectively. Another object of the present invention is to provide a method for manufacturing an element, a semiconductor device, a display device, and a light emitting device, which are hard to be damaged and inexpensive. Another object of the present invention is to provide a method for manufacturing an integrated and inexpensive element or semiconductor device. Another object of the present invention is to provide a method for manufacturing a flexible element, a semiconductor device, a display device, and a light emitting device, respectively.

The description of these issues does not prevent the existence of other issues. One aspect of the present invention does not necessarily have to solve all of these problems. It is possible to extract problems other than these from the description, drawings, and claims.

One aspect of the present invention is to cover a substrate, a first resin layer formed in contact with the substrate, a second resin layer formed in contact with the first resin layer, and the second resin layer. It has a first layer formed in contact with each other, and the second resin layer is composed of a polyimide resin as a main component, and at the interface between the first resin layer and the second resin layer, the first layer is formed. The mass-charge ratio in LC / MS measurement is 1000 or more and 1200, other than the substances detected when the first resin layer on the side opposite to the interface between the resin layer 1 and the second resin layer is measured by LC / MS. It is an element in which the following substances are detected.

Further, in the above configuration, another configuration of the present invention is opposite to the interface between the first resin layer and the second resin layer at the interface between the first resin layer and the second resin layer. It is a light emitting element in which the number of detected substances having a mass-to-charge ratio less than 1000 in the LC / MS measurement is less than 5, other than the substances detected when the first resin layer on the side is LC / MS measured.

Further, another configuration of the present invention is an element in which the substrate has flexibility in the above configuration.

Further, another configuration of the present invention is a semiconductor device in which a transistor is formed in the first layer in the above configuration.

Further, another configuration of the present invention is a semiconductor device in which the transistor is a transistor having a metal oxide in a channel forming region in the above configuration.

Further, another configuration of the present invention is a display device in which a display element is formed in the first layer in the above configuration.

Further, in another configuration of the present invention, a titanium oxide layer is formed on the fabrication substrate, a first resin layer containing polyimide as a main component is formed on the titanium oxide layer, and the first resin layer is formed. By forming a layer to be peeled on the first resin layer and irradiating the first resin layer with laser light, a portion of the first resin layer in contact with the titanium oxide layer is a first portion containing the polyimide as a main component. A separation region containing a substance having a mass-charge ratio of 1000 or more in the LC / MS measurement other than the substance detected when the material before film formation of the resin layer is measured by LC / MS is formed, and the fabrication substrate and the covering are formed. This is a peeling method for separating the peeling layer from the separation region.

Further, in another configuration of the present invention, a first resin layer containing polyimide as a main component is formed on the fabrication substrate, and a peelable layer containing a transistor is formed on the first resin layer. By irradiating the resin layer 1 with laser light, a material before film formation of the first resin layer containing the polyimide as a main component is LC / in the portion of the first resin layer in contact with the titanium oxide layer. A separation region is formed containing a substance having a mass-charge ratio of 1000 or more in LC / MS measurement other than the substance detected during MS measurement, and the fabrication substrate and the peeled layer are separated in the separation region. The method.

In addition, another aspect of the present invention is a method for manufacturing a semiconductor device in which the transistor contains a metal oxide in a channel forming region in the above configuration.

Further, in the other configuration of the present invention, in the above configuration, the number of substances detected in the mass-to-charge ratio of less than 1000 in the LC / MS measurement on the surface of the first resin layer facing the titanium oxide layer is 5. It is a less peeling method.

Further, another configuration of the present invention is a peeling method in which a cavity is formed between the separation region and the titanium oxide layer in the above configuration.

Further, another configuration of the present invention is a method for manufacturing a display device in which the peeled layer includes a display element in the above configuration.

Further, another configuration of the present invention is a method for manufacturing a display device in which the peeled layer includes a light emitting element in the above configuration.

The light emitting device in the present specification includes an image display device using a light emitting element. In addition, a connector to the light emitting element, for example, an anisotropic conductive film or TCP (Tape Carr)
A module in which an ier Package) is attached, a module in which a printed wiring board is provided at the end of TCP, or a module in which an IC (integrated circuit) is directly mounted on a light emitting element by a COG (Chip On Glass) method is a light emitting device. May have. In addition, the luminaire may have a light emitting device.

One aspect of the present invention can provide a thin film, a lightweight element, a semiconductor device, a display device, and a light emitting device, respectively. Alternatively, one aspect of the present invention can provide an element, a semiconductor device, a display device, and a light emitting device that are not easily damaged. Alternatively, one aspect of the present invention can provide an integrated element or semiconductor device. Alternatively, one aspect of the present invention can provide a flexible element, a semiconductor device, a display device, and a light emitting device, respectively.

One aspect of the present invention can provide a thin film, a lightweight and inexpensive element, a semiconductor device, a display device, and a light emitting device, respectively. Alternatively, one aspect of the present invention can provide an inexpensive element, a semiconductor device, a display device, and a light emitting device that are not easily damaged. Alternatively, one aspect of the present invention can provide an integrated and inexpensive element or semiconductor device. Alternatively, one aspect of the present invention can provide a flexible and inexpensive element, semiconductor device, display device and light emitting device.

One aspect of the present invention can provide a method for manufacturing a thin film and a lightweight element, a semiconductor device, a display device, and a light emitting device, respectively. Alternatively, one aspect of the present invention can provide a method for manufacturing an element, a semiconductor device, a display device, and a light emitting device that are not easily damaged. Alternatively, one aspect of the present invention can provide a method for manufacturing an integrated element or semiconductor device. Alternatively, one aspect of the present invention can provide a method for manufacturing a flexible element, a semiconductor device, a display device, and a light emitting device, respectively.

One aspect of the present invention can provide a method for producing a thin film, a lightweight and inexpensive element, a semiconductor device, a display device, and a light emitting device, respectively. Alternatively, one aspect of the present invention can provide a method for manufacturing an element, a semiconductor device, a display device, and a light emitting device, which are not easily damaged and are inexpensive. Alternatively, one aspect of the present invention can provide a method for manufacturing an integrated and inexpensive element or semiconductor device. Alternatively, one aspect of the present invention can provide a method for manufacturing a flexible element, a semiconductor device, a display device, and a light emitting device, respectively.

Alternatively, another aspect of the present invention can provide new light emitting elements, display modules, lighting modules, light emitting devices, display devices, electronic devices, and lighting devices, respectively. Alternatively, it is possible to provide a light emitting element having high luminous efficiency. Alternatively, a display module, a lighting module, a light emitting device, a display device, an electronic device, and a lighting device having low power consumption can be provided.

It is assumed that one aspect of the present invention exerts any one of the above-mentioned effects.

The figure which shows the peeling process. The figure which shows the peeling process. The figure which shows the peeling process. The figure which shows the peeling process. The figure which shows the peeling process and the element. The figure which shows the peeling process and a light emitting device or a display device. The figure which shows the peeling process. The figure which shows the peeling process. The figure which shows the peeling process. The figure which shows the peeling process. The figure which shows the peeling process. The figure which shows the peeling process and the element. The figure which shows an element and a light emitting device or a display device. The figure which shows the peeling process. The figure which shows the light emitting device or the display device. The figure which shows the electronic device. The figure which shows the electronic device. The figure which shows the electronic device. Chromatograph in a PDA detector obtained by LC / MS analysis on the surface of the exfoliated layer. Chromatograph in PDA detector obtained by LC / MS analysis of Comparative Samples 1 and 2. A cross-sectional TEM photograph of a polyimide film on titanium oxide irradiated with a laser beam.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the form and details of the present invention can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not construed as being limited to the description of the embodiments shown below.

Various methods have been proposed as methods for separating elements formed on a fabrication substrate such as a glass substrate from the substrate and adhering them to different substrates. Generally, a method is adopted in which a release layer made of a resin layer or an inorganic layer is used to form a portion having weak adhesion at the interface or inside thereof, and the elements formed on the production substrate are separated from the production substrate. If the adhesion to the manufactured substrate is weakened to the extent that it can be easily separated, peeling will occur in the process of forming the elements, while if the adhesion is too strong, damage due to the force applied during separation may occur. The sex grows.

Therefore, the present invention provides a peeling method capable of separating the elements formed in the non-peeling layer from the manufactured substrate with good yield. By being able to separate the elements with good yield,
It becomes possible to suppress the cost increase due to defective products, and it becomes possible to provide products at low cost.

In one aspect of the present invention, separation is performed using a release layer using a polyimide resin. Since the polyimide resin is relatively heat-resistant, the temperature limit for heating the element formed in the upper layer can be set high. Since sufficient heating can be performed, the reliability of the elements can be improved. Further, it becomes possible to use an element having a higher manufacturing temperature. Specifically 350
Since heating at ° C. is also possible, it becomes easy to form a semiconductor device having good characteristics using a metal oxide.

First, a layer of titanium oxide is formed on the fabrication substrate. Regarding the formation of the titanium oxide layer, the production method does not matter. For example, it can be formed by forming a titanium film and participating in it. Subsequently, a release layer made of a polyimide resin is formed on the titanium oxide layer. The polyimide resin is preferably formed by applying an available polyimide.

Subsequently, a layer to be peeled is formed on the peeled layer. The layer to be peeled may be a single layer or a layer composed of a plurality of layers, but the elements to be used are formed by separating them from the manufacturing substrate and transferring them onto another substrate or element. For example, a transistor, a display element, a light emitting element, and the like correspond to this. The layer to be peeled may contain a plurality of types of elements at the same time. Any other material that can be formed on the fabrication substrate can be formed as a layer to be peeled off.

After forming the peelable layer, the support substrate is attached to the side of the peelable layer opposite to the glass substrate side with a sealing material or an adhesive. The support substrate may be used without being separated as it is after that, or a temporary substrate may be used on the premise that the separation step is performed again.

After attaching the support substrate, the titanium oxide layer is irradiated with a laser beam via the fabrication substrate. The fabrication substrate transmits laser light and has sufficient heat resistance to form the element contained in the layer to be peeled off.
It shall have rigidity and a sufficiently small expansion coefficient. Specifically, a glass substrate or the like is preferable.

By irradiating the laser beam, titanium oxide absorbs the laser beam and generates heat. The heat generation causes decomposition of the polyimide molecules and other contained molecules on the contact surface of the polyimide film, which is the release layer, with the titanium oxide layer. As a result, the strength of the film at the portion where the decomposition has occurred decreases, and the peeled layer can be separated from the support substrate with a sufficiently small force. Further, at this time, a gap may be formed between the titanium oxide layer and the release layer.

At such a release layer interface, a mass-to-charge ratio of 1000 or more and 1200 or less in LC / MS analysis (liquid chromatography-mass spectrometry), which is a value not detected in the extract of soluble polyimide which is a material for forming a polyimide film. There are multiple substances. Further, when the substance existing at the peeling interface is washed away with an arbitrary organic solvent and the obtained solution is analyzed by LC / MS, the mass is a value not detected from the extract of soluble polyimide which is a material for forming a polyimide film. A plurality of substances having a charge ratio (m / z) of 1000 or more and 1200 or less are detected.

On the other hand, at the peeling layer interface on the polyimide side in the present invention, the polyimide is decomposed by the heat generated by the titanium oxide layer, but since the titanium oxide layer is mainly absorbed by the laser instead of the polyimide, the polyimide is not severely decomposed and the mass charge is increased. There are few substances that show a value less than 1000 in ratio (m / z). One of the features is that even if it exists, it is a small number (5 or less).

All of these substances or ions detected from the peeling interface are substances generated as a result of decomposition of the polyimide in contact with the titanium oxide layer heated by laser irradiation, and are substances or ions derived from the glass substrate or the film used for peeling. Is not included in the number.

In the peeling method using the structure in which the peeling layer made of polyimide is formed on the titanium oxide layer as described above, the titanium oxide layer absorbs the laser beam by irradiating the titanium oxide layer with the laser beam from the glass substrate side. , Fever. As a result, the polyimide layer in contact with the titanium oxide layer is decomposed to produce a substance having a mass-to-charge ratio (m / z) of 1000 to 1200 in LC / MS analysis. The substance formed by decomposing the polyimide layer in contact with the titanium oxide layer has a mass-to-charge ratio (m / z) that is not a substance contained in the original material. Good peeling performance is exhibited at the peeling interface where such decomposition products are formed, and by irradiating with laser light, products requiring a peeling method can be manufactured with good yield, and they can be manufactured at low cost. Will be able to provide.

When a glass substrate is used and a polyimide film of about 1 μm is used as the release layer, for example,
A XeCl excimer laser with a wavelength of 308 nm is used as the laser oscillator for the laser light, the set energy of the oscillator is 980 mJ, the repetition frequency is 60 Hz, and the scan speed is 11.7.
By adjusting the optical system to mm / sec, the cross section of the laser beam is formed into a linear shape of 0.6 mm x 300 mm, and an attenuator is used for the optical system, and the attenuation rate of the irradiation energy by the attenuator is 10%. Of course, other lasers may be used.

It is preferable that a transistor is formed on the layer to be peeled off. Further, it is preferable to have a metal oxide in the channel forming region of the transistor. The metal oxide can function as an oxide semiconductor.

Low temperature polysilicon (LTPS (Low Temper)) in the channel formation region of the transistor
When ature Poly-Silicon)) is used, it is necessary to apply a temperature of about 500 ° C. to 550 ° C., so that the release layer is required to have high heat resistance.

However, a transistor using a metal oxide in the channel forming region can be formed at 350 ° C. or lower, and further at 300 ° C. or lower. Therefore, high heat resistance is not required for the layer to be peeled off. Therefore, the heat resistant temperature of the layer to be peeled can be lowered, and the range of material selection is widened.
Further, as compared with the case of using LTPS, the process can be simplified, which is preferable.

In the present embodiment, since the separation region is formed inside the release layer, the thickness of the release layer is 15 n.
It is preferably m or more and 50 μm or less. The thickness of the release layer is 50 nm or more and 20 μm.
The following is preferable. By thinning the release layer as much as possible within the above film thickness range,
It is possible to realize weight reduction, thin film reduction, cost reduction, and improvement of flexibility.

Hereinafter, the elements, semiconductor devices, light emitting devices, and display devices of the present embodiment will be specifically described together with their manufacturing methods.

The thin films (insulating film, semiconductor film, conductive film, etc.) constituting these elements and devices are subjected to sputtering method and chemical vapor deposition (CVD: Chemical Vapor Deposition).
) Method, vacuum deposition method, pulsed laser deposition (PLD: Pulse Laser Depos)
ion) method, atomic layer deposition (ALD: Atomic Layer Deposition)
n) It can be formed by a method or the like. As a CVD method, plasma chemical vapor deposition (P)
The ECVD) method or the thermal CVD method may be used. As an example of the thermal CVD method, organometallic chemical vapor deposition (
MOCVD: Metalorganic CVD) method may be used.

The thin films (insulating film, semiconductor film, conductive film, etc.) that make up the display device are spin-coated, dip, etc.
It can be formed by spray coating, inkjet, dispense, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, knife coating and the like.

When processing a thin film, it can be processed by using a lithography method or the like. Alternatively, an island-shaped thin film may be formed by a film forming method using a shielding mask. Alternatively, the thin film may be processed by a nanoimprint method, a sandblast method, a lift-off method, or the like. As a photolithography method, a resist mask is formed on a thin film to be processed, the thin film is processed by etching or the like to remove the resist mask, and a thin film having photosensitivity is formed and then exposed and developed. There is a method of processing the thin film into a desired shape.

When light is used in the lithography method, the light used for exposure is, for example, i-line (wavelength 365n).
m), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these can be used. In addition, ultraviolet rays, KrF laser light, ArF laser light, or the like can also be used. Further, the exposure may be performed by the immersion exposure technique. Further, as the light used for exposure, extreme ultraviolet light (EUV: Extreme Ultra-violet) or X-ray may be used. Further, an electron beam can be used instead of the light used for exposure. It is preferable to use extreme ultraviolet light, X-rays or an electron beam because extremely fine processing is possible. A photomask is not required when exposure is performed by scanning a beam such as an electron beam.

A dry etching method, a wet etching method, a sandblasting method, or the like can be used for etching the thin film.

[Manufacturing method example 1]
Hereinafter, a peeling method according to one aspect of the present invention will be described using a display device as an example.
First, the titanium oxide layer 15 is formed on the fabrication substrate 14, and the release layer 23 is formed on the titanium oxide layer 15 (
Figure 1).

As the titanium oxide layer, a layer made of titanium may be formed on the entire surface of the manufactured substrate 14 by a sputtering method, and then the titanium oxide layer 15 may be formed by joining the titanium layer.

The resin layer 24 can be formed on the titanium oxide layer 15 by a coating method. Resin layer 24
The forming method is not limited to this, and a printing method or the like may be used.

The resin layer 24 can be formed by using various resin materials (including resin precursors). The resin layer 24 is preferably formed using a thermosetting material. In this embodiment,
The resin layer 24 is formed by using a non-photosensitive material (also referred to as a non-photosensitive material).

The resin layer 24 is preferably formed using a material containing a polyimide resin or a polyimide resin precursor. The resin layer 24 can be formed, for example, by applying a soluble polyimide.

The resin layer 24 is preferably formed using a spin coater. By using the spin coating method, a thin film can be uniformly formed on a large-format substrate.

The release layer 23 is preferably formed using a solution having a viscosity of 5 cP or more and less than 500 cP, preferably 5 cP or more and less than 100 cP, and more preferably 10 cP or more and 50 cP or less. The lower the viscosity of the solution, the easier it is to apply. Further, the lower the viscosity of the solution, the more air bubbles can be suppressed and a good quality film can be formed.

In addition, as a method for forming the resin layer 24, dipping, spray coating, inkjet, etc.
Examples include dispense, screen printing, offset printing, doctor knife, slit coat, roll coat, curtain coat, knife coat and the like.

The manufacturing substrate 14 has rigidity enough to facilitate transportation, heat resistance enough to withstand the temperature related to the manufacturing process of the elements to be formed later, and transparency to the laser beam irradiated in the peeling step. Use one that has light properties. Examples of the material that can be used for the manufacturing substrate 14 include, for example.
Examples include glass, quartz, sapphire and resin. Among these, glass has versatility and is preferable from the viewpoint of price and large area. Examples of the glass include non-alkali glass, barium borosilicate glass, aluminoborosilicate glass and the like.

Next, the resin layer 24 is subjected to the first heat treatment to form the release layer 23 (FIG. 1 (FIG. 1).
B)).

By the first heat treatment, the degassing component (for example, hydrogen, water, etc.) in the release layer 23 can be reduced. In particular, it is preferable to heat at a temperature equal to or higher than the production temperature of each layer formed on the release layer 23. As a result, degassing from the release layer 23 in the transistor manufacturing process can be significantly suppressed.

For example, when the manufacturing temperature of the transistor is up to 350 ° C., the film to be the release layer 23 is 35.
It is preferable to heat at 0 ° C. or higher and 450 ° C. or lower, more preferably 400 ° C. or lower, and 375 ° C.
It is more preferable to heat at ° C or lower. As a result, degassing from the release layer 23 in the transistor manufacturing process can be significantly suppressed.

It is preferable to make the maximum temperature in the fabrication of the transistor equal to the temperature in the first heat treatment because it is possible to prevent the maximum temperature in the fabrication of the display device from being increased by performing the first heat treatment.

By lengthening the treatment time, even when the heating temperature is relatively low, it may be possible to achieve the same peelability as when the heating temperature is higher. Therefore, when the heating temperature cannot be raised due to the configuration of the heating device, it is preferable to lengthen the treatment time.

The time of the first heat treatment is, for example, preferably 5 minutes or more and 24 hours or less, more preferably 30 minutes or more and 12 hours or less, and further preferably 1 hour or more and 6 hours or less. The time of the first heat treatment is not limited to this. For example, the first heat treatment is RTA (Rapid The).
It may be less than 5 minutes when the method is performed using the simulated annealing method.

As the heating device, various devices such as an electric furnace and a device for heating an object to be processed by heat conduction or heat radiation from a heating element such as a resistance heating element can be used. For example, GRTA (G
as Rapid Thermal Anneal device, LRTA (Lamp Rap)
An RTA device such as an id Thermal Anneal) device can be used. LR
The TA device is a device that heats an object to be treated by radiating light (electromagnetic waves) emitted from lamps such as halogen lamps, metal halide lamps, xenon arc lamps, carbon arc lamps, high-pressure sodium lamps, and high-pressure mercury lamps. The GRTA device is a device that performs heat treatment using a high-temperature gas. By using the RTA device, the processing time can be shortened, which is preferable for mass production. Further, the heat treatment may be performed using an in-line type heating device.

The thickness of the release layer 23 may change from the thickness of the resin layer 24 due to the heat treatment. For example, the volume may be reduced and the release layer 23 may be thinner than the resin layer 24 due to the removal of the solvent contained in the resin layer 24 or the progress of curing and the increase in density. Alternatively, the volume may increase due to the inclusion of the heated atmosphere component during the heat treatment, and the release layer 23 may be thicker than the resin layer 24.

Before the first heat treatment, a heat treatment (also referred to as a prebaking treatment) for removing the solvent contained in the resin layer 24 may be performed. The temperature of the prebaking treatment can be appropriately determined depending on the material used. For example, it can be carried out at 50 ° C. or higher and 180 ° C. or lower, 80 ° C. or higher and 150 ° C. or lower, or 90 ° C. or higher and 120 ° C. or lower. Alternatively, the first heat treatment may also serve as the prebaking treatment, and the solvent contained in the resin layer 24 may be removed by the first heat treatment.

The release layer 23 has flexibility. The production substrate 14 is less flexible than the release layer 23.

The coefficient of thermal expansion of the release layer 23 is preferably 0.1 ppm / ° C. or higher and 50 ppm / ° C. or lower, more preferably 0.1 ppm / ° C. or higher and 20 ppm / ° C. or lower, and 0.1 pp.
It is more preferably m / ° C or higher and 10 ppm / ° C or lower. The lower the coefficient of thermal expansion of the peeling layer 23, the more it is possible to suppress damage to the transistor and the like and crack generation in the layer and the like constituting the transistor and the like due to heating.

When the release layer 23 is finally located on the display surface side of the display device, the light from the display element is transmitted through the release layer 23 and observed, so that the release layer 23 is not included. It is preferable that the translucency with respect to visible light is high.

Next, the peeled layer 21 is formed on the peeled layer 23. As an element to be formed on the layer 21 to be peeled off, an example of forming a transistor and a display element is shown in the present embodiment. Any element may be formed.

As the peeling layer 21, the insulating layer 31 is first formed on the peeling layer 23 (FIG. 1 (C)).

The insulating layer 31 is formed at a temperature equal to or lower than the heat resistant temperature of the release layer 23. It is preferably formed at a temperature lower than the temperature of the first heat treatment.

The insulating layer 31 can be used as a barrier layer for preventing impurities contained in the peeling layer 23 from diffusing into transistors and display elements in the peeling layer to be formed later. For example, the insulating layer 3
No. 1 preferably has a function of preventing moisture and the like contained in the release layer 23 from diffusing into the transistor and the display element when the release layer 23 is heated. Therefore, the insulating layer 31 preferably has a high barrier property.

Examples of the insulating layer 31 include a silicon nitride film, a silicon oxide nitride film, and a silicon oxide film.
Inorganic insulating films such as silicon nitride film, aluminum oxide film, and aluminum nitride film can be used. In addition, hafnium oxide film, yttrium oxide film, zirconium oxide film,
A gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used. Further, two or more of the above-mentioned insulating films may be laminated and used. In particular, it is preferable to form a silicon nitride film on the release layer 23 and a silicon oxide film on the silicon nitride film.

In the present specification and the like, silicon oxide refers to a material having a higher oxygen content than nitrogen in its composition, and silicon nitride oxide has a higher nitrogen content than oxygen in its composition. Refers to the material.

The higher the film formation temperature, the denser the inorganic insulating film and the higher the barrier property, so it is preferable to form the inorganic insulating film at a high temperature.

The substrate temperature at the time of film formation of the insulating layer 31 is preferably room temperature (25 ° C.) or higher and 350 ° C. or lower, preferably 100.
It is more preferably ° C. or higher and 300 ° C. or lower.

Next, the transistor 40 is formed on the insulating layer 31 (FIG. 1 (C)).

The structure of the transistor included in the display device is not particularly limited. For example, it may be a planar type transistor, a stagger type transistor, or an inverted stagger type transistor. Further, a transistor structure having either a top gate structure or a bottom gate structure may be used. Alternatively, gate electrodes may be provided above and below the channel.

Here, as the transistor 40, a case where a transistor having a bottom gate structure having a metal oxide layer 44 is manufactured is shown. The metal oxide layer 44 can function as a semiconductor layer of the transistor 40. The metal oxide can function as an oxide semiconductor.

In the present embodiment, an oxide semiconductor is used as the semiconductor of the transistor. It is preferable to use a semiconductor material having a wider bandgap and a smaller carrier density than silicon because the current in the off state of the transistor can be reduced.

The transistor 40 is formed at a temperature equal to or lower than the heat resistant temperature of the release layer 23. The transistor 40 is preferably formed at a temperature lower than the temperature of the first heat treatment.

Specifically, first, the conductive layer 41 is formed on the insulating layer 31. The conductive layer 41 can be formed by forming a resist mask after forming a film on the conductive film, etching the conductive film, and then removing the resist mask.

The substrate temperature at the time of forming the conductive film is preferably room temperature or higher and 350 ° C. or lower, and more preferably room temperature or higher and 300 ° C. or lower.

The conductive layer of the display device has a single-layer structure or a metal such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or an alloy containing this as a main component. It can be used as a laminated structure. Alternatively, indium oxide, indium tin oxide (ITO), indium oxide containing tungsten, indium zinc oxide containing tungsten, indium oxide containing titanium, ITO containing titanium, indium zinc oxide, zinc oxide (ZnO). , ZnO containing gallium, ITO containing silicon, and other conductive materials having translucency may be used. Further, a semiconductor such as polycrystalline silicon or an oxide semiconductor, which has been reduced in resistance by containing an impurity element or the like, or a silicide such as nickel silicide may be used. A membrane containing graphene can also be used. The graphene-containing film can be formed by reducing, for example, a film-like film containing graphene oxide. Further, a semiconductor such as an oxide semiconductor containing an impurity element may be used. Alternatively, it may be formed by using a conductive paste such as silver, carbon or copper, or a conductive polymer such as polythiophene. Conductive pastes are inexpensive and preferred. The conductive polymer is preferable because it is easy to apply.

Subsequently, the insulating layer 32 is formed. As the insulating layer 32, an inorganic insulating film that can be used for the insulating layer 31 can be used.

Subsequently, the metal oxide layer 44 is formed. The metal oxide layer 44 can be formed by forming a metal oxide film, forming a resist mask, etching the metal oxide film, and then removing the resist mask.

The substrate temperature at the time of forming the metal oxide film is preferably 350 ° C. or lower, more preferably room temperature or higher and 200 ° C. or lower, and further preferably room temperature or higher and 130 ° C. or lower.

The metal oxide film can be formed by using either one or both of the inert gas and the oxygen gas. The oxygen flow rate ratio (oxygen partial pressure) at the time of forming the metal oxide film is not particularly limited. However, in the case of obtaining a transistor having high field effect mobility, the oxygen flow rate ratio (oxygen partial pressure) at the time of film formation of the metal oxide film is preferably 0% or more and 30% or less.
% Or more and 30% or less are more preferable, and 7% or more and 15% or less are further preferable.

The metal oxide film preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc.

The metal oxide preferably has an energy gap of 2.0 eV or more, preferably 2.5 eV.
The above is more preferable. It is more preferably 3.0 eV or more. As described above, by using the metal oxide having a wide energy gap, the off-current of the transistor can be reduced.

The metal oxide film can be formed by a sputtering method. In addition, the PLD method,
A PECVD method, a thermal CVD method, an ALD method, a vacuum deposition method, or the like may be used.

Subsequently, the conductive layer 43a and the conductive layer 43b are formed. The conductive layer 43a and the conductive layer 43b are
It can be formed by forming a resist mask after forming the conductive film, etching the conductive film, and then removing the resist mask. The conductive layer 43a and the conductive layer 43b are each connected to the metal oxide layer 44.

When processing the conductive layer 43a and the conductive layer 43b, a part of the metal oxide layer 44 not covered by the resist mask may be thinned by etching.

The substrate temperature at the time of forming the conductive film is preferably room temperature or higher and 350 ° C. or lower, and more preferably room temperature or higher and 300 ° C. or lower.

As described above, the transistor 40 can be manufactured (FIG. 1 (C)). In the transistor 40, a part of the conductive layer 41 functions as a gate, a part of the insulating layer 32 functions as a gate insulating layer, and the conductive layer 43a and the conductive layer 43b each function as either a source or a drain. ..

Next, the insulating layer 33 that covers the transistor 40 is formed (FIG. 1 (D)). The insulating layer 33 can be formed by the same method as that of the insulating layer 31.

Further, as the insulating layer 33, it is preferable to use an oxide insulating film such as a silicon oxide film or a silicon nitride film formed in an atmosphere containing oxygen. Further, it is preferable to laminate an insulating film such as a silicon nitride film on the silicon oxide film or the silicon oxide film, which is difficult to diffuse and permeate oxygen. The oxide insulating film formed in an atmosphere containing oxygen can be an insulating film that easily releases a large amount of oxygen by heating. Oxygen can be supplied to the metal oxide layer 44 by performing heat treatment in a state where such an oxide insulating film that releases oxygen and an insulating film that diffuses and does not easily permeate oxygen are laminated. As a result, oxygen deficiency in the metal oxide layer 44 and defects at the interface between the metal oxide layer 44 and the insulating layer 33 can be repaired, and the defect level can be reduced.
As a result, a display device with extremely high reliability can be realized.

By the above steps, the insulating layer 31, the transistor 40, and the insulating layer 33 can be formed on the peeling layer 23 (FIG. 1 (D)).

When an organic insulating film is used for the insulating layer 34, the temperature applied to the release layer 23 when the insulating layer 34 is formed is preferably room temperature or higher and 350 ° C. or lower, and more preferably room temperature or higher and 300 ° C. or lower.

When an inorganic insulating film is used for the insulating layer 34, the substrate temperature at the time of film formation is preferably room temperature or higher and 350 ° C. or lower, and more preferably 100 ° C. or higher and 300 ° C. or lower.

Next, an opening reaching the conductive layer 43b is formed in the insulating layer 34 and the insulating layer 33.

After that, the conductive layer 61 is formed (FIG. 1 (E)). A part of the conductive layer 61 is a light emitting element 60.
Functions as a pixel electrode of. The conductive layer 61 can be formed by forming a resist mask after forming a film on the conductive film, etching the conductive film, and then removing the resist mask.

The conductive layer 61 is formed at a temperature equal to or lower than the heat resistant temperature of the release layer 23. The conductive layer 61 is preferably formed at a temperature lower than the temperature of the first heat treatment.

The substrate temperature at the time of forming the conductive film is preferably room temperature or higher and 350 ° C. or lower, and more preferably room temperature or higher and 300 ° C. or lower.

Next, the insulating layer 35 that covers the end portion of the conductive layer 61 is formed (FIG. 1 (E)). As the insulating layer 35, an organic insulating film or an inorganic insulating film that can be used for the insulating layer 31 can be used.

The insulating layer 35 is formed at a temperature equal to or lower than the heat resistant temperature of the release layer 23. The insulating layer 35 is preferably formed at a temperature lower than the temperature of the first heat treatment.

When an organic insulating film is used for the insulating layer 35, the temperature applied to the release layer when the insulating layer 35 is formed is preferably room temperature or higher and 350 ° C. or lower, and more preferably room temperature or higher and 300 ° C. or lower.

When an inorganic insulating film is used for the insulating layer 35, the substrate temperature at the time of film formation is preferably room temperature or higher and 350 ° C. or lower, and more preferably 100 ° C. or higher and 300 ° C. or lower.

Next, the EL layer 62 and the conductive layer 63 are formed (FIG. 2 (A)). A part of the conductive layer 63 functions as a common electrode of the light emitting element 60.

The EL layer 62 can be formed by a method such as a thin film deposition method, a coating method, a printing method, or a ejection method. E
When the L layer 62 is formed separately for each pixel, it can be formed by a vapor deposition method using a shadow mask such as a metal mask, an inkjet method, or the like.

Either a low molecular weight compound or a high molecular weight compound can be used for the EL layer 62, and an inorganic compound may be contained.

The conductive layer 63 can be formed by using a vapor deposition method, a sputtering method, or the like.

The conductive layer 63 is formed at a temperature equal to or lower than the heat resistant temperature of the release layer 23 and lower than the heat resistant temperature of the EL layer 62. Further, it is preferable to form the film at a temperature lower than the temperature of the first heat treatment.

As described above, the light emitting element 60 can be formed (FIG. 2 (A)). Light emitting element 60
Has a configuration in which a conductive layer 61, a part of which functions as a pixel electrode, an EL layer 62, and a part of a conductive layer 63, which functions as a common electrode, are laminated.

The light emitting element may be any of a top emission type, a bottom emission type, and a dual emission type. A conductive film that transmits visible light is used for the electrode on the side that extracts light.
Further, it is preferable to use a conductive film that reflects visible light for the electrode on the side that does not take out light. Here, it is assumed that a top emission type light emitting element is manufactured.

Next, the insulating layer 74 is formed by covering the conductive layer 63 (FIG. 2B). The insulating layer 74 functions as a protective layer that suppresses the diffusion of impurities such as water into the light emitting element 60. Light emitting element 60
Is sealed by the insulating layer 74. After forming the conductive layer 63, it is preferable to form the insulating layer 74 without exposing it to the atmosphere.

The insulating layer 74 is formed at a temperature equal to or lower than the heat resistant temperature of the release layer 23 and lower than the heat resistant temperature of the light emitting element 60. The insulating layer 74 is preferably formed at a temperature lower than the temperature of the first heat treatment.

The insulating layer 74 is preferably configured to include, for example, an inorganic insulating film having a high barrier property that can be used for the above-mentioned insulating layer 31. Further, the inorganic insulating film and the organic insulating film may be laminated and used.

The insulating layer 74 can be formed by using an ALD method, a sputtering method, or the like. The ALD method and the sputtering method are preferable because low-temperature film formation is possible. It is preferable to use the ALD method because the coverage of the insulating layer 74 is good.

Next, the protective layer 75 is formed on the insulating layer 74 (FIG. 2 (C)). The protective layer 75 can be used as a layer located on the outermost surface of the display device. The protective layer 75 preferably has high transparency to visible light.

It is preferable to use an organic insulating film that can be used for the above-mentioned insulating layer 31 as the protective layer 75 because it is possible to prevent scratches and cracks on the surface of the display device.

In FIG. 3A, an adhesive layer 75b is used instead of the protective layer 75, and the substrate 75 is placed on the insulating layer 74.
An example in which a is pasted together is shown.

For the adhesive layer 75b, various resins of various curable adhesives such as a photocurable adhesive such as an ultraviolet curable type, a reaction curable adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used. Moreover, you may use an adhesive sheet or the like.

On the substrate 75a, for example, polyester resin such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethylmethacrylate resin, polycarbonate (PC) resin, polyether sulfone (PES). ) Resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) Resins, ABS resins, cellulose nanofibers and the like can be used. Various materials such as glass, quartz, resin, metal, alloy, and semiconductor may be used for the substrate 75a. When the substrate is peeled off again and attached to a different substrate, the substrate 7 is used.
Any substrate may be used for 5a. In addition, in order to make it flexible, the substrate 75a
Depending on the thickness and material of the substrate, a substrate having the required flexibility and shape may be used.

Next, the fabrication substrate 14 and the release layer 23 are separated. In order to separate, the titanium oxide layer 15 is irradiated with a laser beam from the manufacturing substrate 14 side through the manufacturing substrate 14, and a separation region 25 is formed at the interface between the titanium oxide layer 15 and the release layer 23 (FIG. 3). (B)). The separation region 25 is a portion in which the titanium oxide layer 15 generates heat when irradiated with laser light, and as a result, the molecules constituting the release layer 23 are decomposed and become brittle. When the release layer 23 is formed of a polyimide resin, LC / MS analysis (liquid chromatography) of a value that is not detected in the extract of soluble polyimide, which is a material for forming the polyimide film, in the separation region 25. There are a plurality of substances having a mass-to-charge ratio of 1000 or more and 1200 or less in (mass analysis). All of these molecules are produced as a result of decomposition of the polyimide in contact with the titanium oxide layer heated by laser irradiation, and the release layer 23 having a surface on which such a substance exists is easy with an appropriate force. It can be separated from the fabrication substrate 14 on which the titanium oxide layer 15 is formed. In the final product, the molecule remains on the separated surface, so its presence can be confirmed by measurement.

The laser to irradiate is, for example, XeCl having a wavelength of 308 nm as a laser oscillator for laser light.
Using an excimer laser, the set energy of the oscillator is 980mJ and the repetition frequency is 60H.
z, the scan speed is 11.7 mm / sec, and by adjusting the optical system, the cross section of the laser beam is formed into a linear shape of 0.6 mm x 300 mm, and an attenuator is used for the optical system, and irradiation with the attenuator is used. A method of setting the energy attenuation rate to 10% can be mentioned, and of course, other lasers may be used.

After that, for example, by applying a force that pulls the separation region 25 in the vertical direction, the layer to be peeled off can be peeled off from the manufactured substrate 14 on which the titanium oxide layer 15 is formed (FIG. 3C).
Specifically, the layer to be peeled off can be easily peeled off from the manufactured substrate 14 on which the titanium oxide layer 15 is formed by adsorbing a part of the upper surface of the substrate 75a and pulling it upward.

Here, at the time of peeling, a liquid containing water such as water or an aqueous solution is added to the peeling interface, and the peeling is performed so that the liquid permeates the peeling interface, whereby the peelability can be improved. Further, it is possible to suppress that the static electricity generated at the time of peeling adversely affects the functional element such as a transistor (such as the semiconductor element being destroyed by the static electricity).

Prior to separation, a starting point of separation may be formed by separating a part of the release layer 23 from the production substrate 14 on which the titanium oxide layer 15 is formed. For example, the starting point of separation may be formed by inserting a sharply shaped instrument such as a cutting tool into the separation region 25. Alternatively, the release layer 23 may be cut from the substrate 75a side with a sharp-shaped instrument to form a starting point for separation. Alternatively, the starting point of separation may be formed by a method using a laser such as a laser ablation method.

The separation region 25 exposed by separating from the production substrate 14 on which the titanium oxide layer 15 is formed and the substrate 29 may be bonded to each other by using the adhesive layer 28 (FIG. 3 (D)). The substrate 29 is
It can function as a support substrate for a display device.

A material that can be used for the adhesive layer 75b can be applied to the adhesive layer 28. A material that can be used for the substrate 75a can be applied to the substrate 29.

Through the above steps, a metal oxide is applied to the channel forming region of the transistor, and a display device to which the EL element is applied can be manufactured.

At the interface between the adhesive layer 28 and the release layer 23 of the display device produced in this way, the mass-to-charge ratio is 1000 or more and 1200 or less in LC / MS measurement, and the mass charge is not included in the material of the release layer. A plurality of substances derived from the ratio ion will be contained. In LC / MS measurement, substances derived from ions with a mass-to-charge ratio of 1000 or more and 1200 or less and a mass-to-charge ratio not included in the material of the release layer are generated by decomposition caused by heat generation of titanium oxide due to laser irradiation. However, it is not detected at the other portion, that is, the interface between the peeling layer 23 and the layer to be peeled (the interface with the insulating layer 31).

[Manufacturing method example 2]
In the following production method examples, the description of the same parts as those of the production method examples described above may be omitted.

First, the insulating layer 33 to the protective layer 75 are formed in the same manner as in the manufacturing method Example 1. When each of these components is produced, it is formed at a temperature equal to or lower than the heat resistant temperature of the release layer 23. Each of these components is preferably formed at a temperature lower than both the temperature of the first heat treatment and the temperature of the second heat treatment.

Then, by irradiating the laser beam, a separation region 25 is formed at the interface between the titanium oxide layer 15 and the release layer 23 at least in the portion of the manufactured substrate 14 on which the titanium oxide layer 15 is formed and where the element to be peeled is formed. (FIG. 4 (A)) The type, wavelength, output, etc. of the laser conform to the manufacturing method 1. At this time, the titanium oxide layer 15 is provided with a portion that is not irradiated with the laser beam. Since the separation region 25 is not formed in the portion corresponding to the position where the laser beam is not irradiated, it is possible to prevent accidental peeling due to transportation or the like.

Next, a starting point of separation is formed in the release layer 23 (FIGS. 4 (B1) and (B2)).

For example, from the protective layer 75 side, a sharp-shaped instrument 65 such as a blade is inserted inside the end of the separation region 25, and a cut 64 is made in a frame shape. This cut 64 is the starting point of separation.

Alternatively, the laser beam may be irradiated in a frame shape inside the separation region 25 in the release layer 23, and this may be used as the starting point of separation.

When a plurality of display devices are formed (multi-chamfered) with one manufacturing board, FIG. 4 (B2) is used.
It is preferable to arrange a plurality of display devices inside the cut 64 as in the separation region 25. As a result, a plurality of display devices can be collectively separated from the manufacturing substrate.

Alternatively, a plurality of separation regions 25 are formed on one manufacturing substrate, and the separation regions 2 for each display device are formed.
The display element and the semiconductor element may be made separately at the position of 5. FIG. 4 (B3) shows an example of forming four separation regions on the manufacturing substrate. Frame-shaped cuts 6 in each of the four separation areas
By inserting 4, each display device can be peeled off at different timings.

In the manufacturing method example 2, the portion where the separation region 25 is formed and the separation region 25 are formed on the manufacturing substrate 14.
A portion where is not formed and a portion are provided. Since the release layer 23 is not brittle in the portion where the separation region 25 is not formed, it is difficult to separate from the production substrate 14. Therefore, it is possible to prevent the layer 21 to be peeled from peeling from the manufactured substrate 14 at an unintended timing.
Then, by forming the starting point of separation, the manufacturing substrate 14 and the layer to be peeled 2 are formed at a desired timing.
It can be separated from 1. Therefore, the timing of peeling can be controlled and high peelability can be realized. As a result, the yield of the peeling process and the manufacturing process of the display device can be increased.

Next, the fabrication substrate 14 on which the titanium oxide layer 15 is formed and the transistor 40 are separated (FIG. 5 (A)).

In the production method Example 2, by irradiating the titanium oxide layer 15 with a laser beam, the molecules of the resin contained in the release layer 23 are decomposed to form a separation region 25 which is a brittle region, and the separation region 25 is used. The layer 21 to be peeled off from the fabrication substrate 14 on which the titanium oxide layer 15 was formed by separation.
Can be peeled off.

Next, the separation region 25 exposed by separating from the production substrate 14 on which the titanium oxide layer 15 is formed and the substrate 29 are bonded to each other using the adhesive layer 28 (FIG. 5 (B)). The substrate 29 is
It can function as a support substrate for a display device.

Through the above steps, a metal oxide is applied to the channel forming region of the transistor, and a display device to which the EL element is applied can be manufactured.

[Display device configuration example 1]
FIG. 6A is a top view of the display device 10A. 6 (B) and 6 (C) are examples of a cross-sectional view of the display unit 381 of the display device 10A and a cross-sectional view of the connection portion with the FPC 372, respectively.

The display device 10A can be manufactured by using the above-mentioned production method Example 2. Display device 10A
Can be held in a bent state, bent repeatedly, and the like.

The display device 10A has a protective layer 75 and a substrate 29. The protective layer 75 side is the display surface side of the display device. The display device 10A has a display unit 381 and a drive circuit unit 382. Display device 1
FPC372 is attached to 0A.

The conductive layer 43c and the FPC 372 are electrically connected via the connecting body 76 (FIG. 6 (FIG. 6).
B), (C)). The conductive layer 43c can be formed of the same material and the same process as the source and drain of the transistor.

The connecting body 76 includes various anisotropic conductive films (ACF: Anisotropic C).
onductive Film) and anisotropic conductive paste (ACP: Anisotrop)
icConductive Paste) and the like can be used.

The display device shown in FIG. 6 (C) differs from the configuration of FIG. 6 (B) in that it has a transistor 49 instead of the transistor 40 and has a colored layer 97 on the insulating layer 33. .. When the bottom emission type light emitting element 60 is used, the colored layer 97 may be provided between the light emitting element 60 and the substrate 29.

The transistor 49 shown in FIG. 6C has a conductive layer 45 that functions as a gate electrode in addition to the configuration of the transistor 40 shown in FIG. 6B.

A configuration in which a semiconductor layer on which a channel is formed is sandwiched between two gates is applied to the transistor 49. With such a configuration, the threshold voltage of the transistor can be controlled. The transistor may be driven by connecting two gates and supplying the same signal to them. Such a transistor can increase the field effect mobility as compared with other transistors, and can increase the on-current. As a result, a circuit capable of high-speed driving can be manufactured. Further, the occupied area of the circuit unit can be reduced. By applying a transistor with a large on-current, it is possible to reduce the signal delay in each wiring even if the number of wirings increases when the display device is enlarged or has high definition, and display unevenness is suppressed. can do.

Alternatively, the threshold voltage of the transistor can be controlled by giving one of the two gates a potential for controlling the threshold voltage and giving the other a potential for driving.

As described above, when these display devices are manufactured, the titanium oxide layer 15 is irradiated with laser light to decompose the resin molecules contained in the release layer 23, and the separation region 25, which is a brittle region, is formed. The layer to be peeled 21 can be peeled off from the manufacturing substrate 14 on which the titanium oxide layer 15 is formed by forming and separating from the separation region. Therefore, it is manufactured by applying the manufacturing method of the display device of the present embodiment. The region between the adhesive layer 28 and the release layer 23 (the interface between the adhesive layer 28 and the release layer 23) of the displayed display device was generated by decomposition of the release layer 23 due to irradiation with laser light. In LC / MS measurement, the mass charge ratio is 1000 or more and 1200 or less.
Moreover, at least one of the substances having a mass-to-charge ratio that is not contained in the material of the release layer is present. The peeling layer 23 in which these substances are present has a good peeling performance while suppressing the unintentional peeling of the peeled layer 21 due to the appropriate decomposition of the molecules, and thus has a good yield. The display device can be manufactured well.

Fourier Transform Infrared Spectroscopy (Fourier Transform Infrared S)
spectrumcopy, FTIR), nuclear magnetic resonance spectroscopy ( ¹ H-NMR), gas chromatograph mass spectrometry (GC / MS), liquid chromatograph mass spectrometry (LC / MS), time-of-flight secondary ion mass spectrometry (LC / MS) TOF-SIMS) and matrix-assisted laser desorption / ionization time-of-flight mass spectrometry (MALDI-TOFMS) using one or more analytical methods to separate the surface (separation region 25) or adhesive layer 28 of the release layer 23. By analyzing the surface of the surface, the molecules present at the interface between the release layer 23 and the adhesive layer 28 can be confirmed.

To perform analysis by LC / MS, the peeled layer interface after peeling is washed away with an arbitrary solvent (toluene, chloroform, 1,1,3,3-hexafluoro-2-propanol (abbreviation: HFIP), etc.) to obtain the obtained product. The cleaning solution is diluted with an arbitrary solvent (preferably an organic solvent used for LC / MS measurement such as acetonitrile) to prepare a measurement sample.

When analyzing a display device, first, in the transistor structure of the display device, a layer to be a peeling interface, for example, a layer in which polyimide and an adhesive (epoxy resin or the like) are in contact with each other is specified.
Examples of the analysis method used to identify the peeling interface include TEM-EDX (transmission electron microscope-energy dispersive X-ray analysis, etc.). A method of analyzing the vicinity of the specified interface by an analysis method such as TOF-SIMS (time-of-flight secondary ion mass spectrometry) that can obtain molecular weight distribution information in the depth direction, or M
Analysis can be performed using an analysis method such as ALDI-MS (matrix-assisted laser desorption / ionization mass spectrometry) that can obtain information on the molecular weight distribution in the lateral direction. Further, after the peeling interface is specified by the above method, the peeling interface is peeled off to expose the surface, and then the surfaces of both peeling interfaces are washed away with an arbitrary solvent (toluene, chloroform, HFIP, etc.) to obtain the obtained product. The cleaning solution can be diluted with an arbitrary solvent (preferably an organic solvent used for LC / MS measurement such as acetonitrile) to prepare a measurement sample, and LC / MS analysis can be performed.

[Manufacturing method example 3]
First, similarly to the production method Example 2, the release layer 23 to the insulating layer 31 are formed on the production substrate 14 on which the titanium oxide layer 15 is formed (FIG. 7 (A)).

Next, the transistor 80 is formed on the insulating layer 31 (FIG. 7 (B)).

Here, as the transistor 80, a case where a transistor having a metal oxide layer 83 and two gates is manufactured is shown.

The transistor 80 is formed at a temperature equal to or lower than the heat resistant temperature of the release layer 23. It is preferable to form at a temperature lower than both the temperature of the first heat treatment and the temperature of the second heat treatment.

Specifically, first, the conductive layer 81 is formed on the insulating layer 31. The conductive layer 81 can be formed by forming a resist mask after forming a film on the conductive film, etching the conductive film, and then removing the resist mask.

Subsequently, the insulating layer 82 is formed. As the insulating layer 82, an inorganic insulating film that can be used for the insulating layer 31 can be used.

Subsequently, the metal oxide layer 83 is formed. The metal oxide layer 83 can be formed by forming a metal oxide film, forming a resist mask, etching the metal oxide film, and then removing the resist mask. For the metal oxide layer 83, a material that can be used for the metal oxide layer 44 can be used.

Subsequently, the insulating layer 84 and the conductive layer 85 are formed. As the insulating layer 84, an inorganic insulating film that can be used for the insulating layer 31 can be used. The insulating layer 84 and the conductive layer 85 form a resist mask after forming an insulating film to be the insulating layer 84 and a conductive film to be the conductive layer 85, and after etching the insulating film and the conductive film, resist. It can be formed by removing the mask.

Next, the insulating layer 33 covering the metal oxide layer 83, the insulating layer 84, and the conductive layer 85 is formed. The insulating layer 33 can be formed by the same method as that of the insulating layer 31.

The insulating layer 33 preferably contains hydrogen. Hydrogen contained in the insulating layer 33 diffuses into the metal oxide layer 83 in contact with the insulating layer 33, and a part of the metal oxide layer 83 has a low resistance. Insulation layer 33
Since the metal oxide layer 83 in contact with the metal oxide layer 83 functions as a low resistance region, it is possible to increase the on-current of the transistor 80 and improve the field effect mobility.

Next, an opening is formed in the insulating layer 33 to reach the metal oxide layer 83.

Subsequently, the conductive layer 86a and the conductive layer 86b are formed. The conductive layer 86a and the conductive layer 86b are
It can be formed by forming a resist mask after forming the conductive film, etching the conductive film, and then removing the resist mask. The conductive layer 86a and the conductive layer 86b are each electrically connected to the metal oxide layer 83 via the opening of the insulating layer 33.

As described above, the transistor 80 can be manufactured (FIG. 7 (B)). In the transistor 80, a part of the conductive layer 81 functions as a gate, a part of the insulating layer 84 functions as a gate insulating layer, a part of the insulating layer 82 functions as a gate insulating layer, and a part of the conductive layer 85. Acts as a gate. The metal oxide layer 83 has a channel region and a low resistance region. The channel region overlaps with the conductive layer 85 via the insulating layer 84. The low resistance region has a portion connected to the conductive layer 86a and a portion connected to the conductive layer 86b.

Next, the insulating layer 34 to the light emitting element 60 are formed on the insulating layer 33 (FIG. 7 (C)). For these steps, reference to Production Method Example 1.

Further, the steps of FIGS. 8 (A) and 8 (B) are performed independently of the steps of FIGS. 7 (A) to 7 (C).
Similar to the step of forming the release layer 23 on the production substrate 14, the titanium oxide layer 92 is formed on the production substrate 91 to form the release layer 93.

Next, the insulating layer 95 is formed on the release layer 93. Next, the colored layer 97 and the light-shielding layer 98 are formed on the insulating layer 95 (FIG. 8 (B)).

As for the insulating layer 95, the description of the insulating layer 31 can be incorporated.

As the coloring layer 97, a color filter or the like can be used. The colored layer 97 is a light emitting element 60.
Arrange so that it overlaps with the display area of.

As the light-shielding layer 98, a black matrix or the like can be used. The light-shielding layer 98 is arranged so as to overlap the insulating layer 35.

Next, the surface of the production substrate 14 on which the transistor 80 and the like are formed and the surface of the production substrate 91 on which the colored layer 97 and the like are formed are bonded together using the adhesive layer 99 (FIG. 8C). ..

Next, the titanium oxide layer 15 is irradiated with a laser beam to form a separation region 25 (FIG. 9 (A)).
After that, the starting point of separation is formed (FIG. 9 (B)). Either the production substrate 14 or the production substrate 91 may be separated first. Here, an example in which the production substrate 14 is separated before the production substrate 91 is shown.

The laser irradiation conditions for forming the separation region 25 may be the same as the method described in Production Method Example 1.

As a method of forming the starting point of separation, for example, there is a method of irradiating the inside of the separation region 25 in the release layer 23a with the laser beam 66 in a frame shape from the production substrate 14 side (laser shown in FIG. 9C). Irradiation of light 67). This method is suitable when a hard substrate such as glass is used for the fabrication substrate 14 and the fabrication substrate 91.

The laser used to form the starting point of separation is not particularly limited. For example, a continuous oscillation type laser or a pulse oscillation type laser can be used. The irradiation conditions of the laser beam (frequency, power density, energy density, beam profile, etc.) are appropriately controlled in consideration of the thickness of the fabrication substrate, the titanium oxide layer and the release layer 23, the position of the separation region 25, the material, and the like.

In the production method Example 4, the titanium oxide layer 1 is irradiated when the laser beam is irradiated to form the separation region 25.
A portion to be irradiated with the laser beam and a portion not to be irradiated with the laser beam are provided in 5. The separation region 25 is formed in the portion irradiated with the laser beam to form the separation region 25, and the release layer 23 is in a state where it can be easily separated from the production substrate 14. On the other hand, in the portion where the separation region 25 is not formed, since there is no brittle portion in the release layer 23, the release layer 23 remains difficult to separate from the manufactured substrate 14. As a result, it is possible to prevent the layer 21 to be peeled from peeling from the manufactured substrate 14 at an unintended timing. Similarly, when the laser beam irradiation for forming the separation region 94 is performed from the fabrication substrate 91, the release layer 93 is not intended from the fabrication substrate 91 by providing a portion to be irradiated with the laser beam and a portion not to be irradiated with the laser beam. It is possible to suppress separation at the timing.

Then, by forming a separation starting point only on one of the release layer 23 and the release layer 93, the production substrate 14 and the production substrate 91 can be separated from each other in separate steps. As a result, the yield of the peeling process and the manufacturing process of the display device can be increased.

Next, when the starting point of separation is formed in the release layer 23 (separation region 25) from the production substrate 14 side, the production substrate 14 and the transistor 80 are separated (FIG. 10 (A)). Here, an example is shown in which the inner portion of the frame-shaped irradiation of the laser beam 66 (which can also be said to be the inner portion of the laser beam irradiation region 67 shown in FIG. 9B) is peeled off from the manufacturing substrate 14. Further, in FIG. 10A, separation occurs in the adhesive layer 99 in the outer portion of the frame-shaped irradiation of the laser beam 66 (adhesive layer 99).
Is agglomerated and fractured), but is not limited to this. For example, on the outside of the irradiation region 67, the adhesive layer 99 may be separated from the insulating layer 95 or the insulating layer 35 (also referred to as interfacial fracture or adhesive fracture).

Next, the release layer 23 exposed by separating from the production substrate 14 and the substrate 29 are separated from each other by the adhesive layer 2.
8 is used for bonding (FIG. 10 (B)). The substrate 29 functions as a support substrate for the display device.

Next, a separation starting point is formed in the release layer 93 (separation region 94) (FIG. 11 (A)).

In FIG. 11A, a sharp-shaped instrument 65 such as a cutting tool is inserted from the substrate 29 side inside the end of the separation region 94 in the release layer 93, and a cut is made in a frame shape. It is suitable when a resin is used for the substrate 29.

Alternatively, the titanium oxide layer 92 may be irradiated with laser light in a frame shape from the production substrate 91 side, as in the case where the separation starting point is formed in the release layer 23.

By forming the starting point of separation, the production substrate 91 and the release layer 93 can be separated at a desired timing. Therefore, the timing of peeling can be controlled and high peelability can be realized. As a result, the yield of the peeling process and the manufacturing process of the display device can be increased.

Next, the fabrication substrate 91 and the transistor 80 are separated (FIG. 11 (B)). Here, an example is shown in which the inner portion having a frame-shaped cut is peeled off from the manufacturing substrate 91.

Next, the release layer 93 exposed by separating from the production substrate 91 and the substrate 22 are separated from each other by the adhesive layer 1.
3 is used for bonding (FIG. 12 (A)). The substrate 22 can function as a support substrate for the display device.

In FIG. 12A, the light emitted from the light emitting element 60 is taken out of the display device through the colored layer 97 and the peeling layer 93. Therefore, it is preferable that the release layer 93 has a high visible light transmittance.

The release layer 93 may be removed. As a result, the light extraction efficiency of the light emitting element 60 can be further improved. In FIG. 12B, the release layer 93 is removed, and the adhesive layer 13 is used to remove the insulating layer 9.
An example in which the substrate 22 is attached to 5 is shown.

A material that can be used for the adhesive layer 75b can be applied to the adhesive layer 13.

A material that can be used for the substrate 75a can be applied to the substrate 22.

Production method Example 4 is an example in which a display device is produced by performing the peeling method of one aspect of the present invention twice.
In one aspect of the present invention, since all the functional elements and the like constituting the display device are formed on the manufactured substrate, even when the display device having high definition is manufactured, the position is high on the flexible substrate. No alignment accuracy is required. Therefore, a flexible substrate can be easily attached.

As described above, when these display devices are manufactured, the titanium oxide layer 15 and the titanium oxide layer 9 are produced.
By irradiating 2 with a laser beam, the molecules of the resin contained in the peeling layer 23 and the peeling layer 93 are decomposed to form a separated region 25 and a separated region 94, which are brittle regions, and separated from the separated region. Therefore, the element forming region can be peeled off from the manufactured substrate 14 and the manufactured substrate 91. Therefore, the adhesive layer 28 and the peeling layer 23 of the display device manufactured by applying the manufacturing method of the display device of the present embodiment are used. The region between (the interface between the adhesive layer 28 and the peeling layer 23) and the region between the adhesive layer 13 and the peeling layer 93 (the interface between the adhesive layer 13 and the peeling layer 93) were irradiated with laser light. LC / MS generated by the decomposition of the release layer 23 or the release layer 93.
In the measurement, there are a plurality of substances having a mass-to-charge ratio of 1000 or more and 1200 or less and having a mass-to-charge ratio not included in the material of the release layer. Exfoliation layer 2 in which molecules of these molecular weights are present
Since the peeling layer 93 and the peeling layer 93 have good peeling performance while suppressing the occurrence of unintended peeling due to the appropriate decomposition of molecules, a display device with good yield can be manufactured.

[Modification example]
In Production Method Example 4 (FIG. 18C), the case where the adhesive layer 99 is also formed outside the separation region 25 and the separation region 94 is shown. The adhesion on the outside of the separation region is high, and if separation is performed as it is, the peeling yield may decrease, such as poor peeling.

Therefore, as shown in FIGS. 13 (A) and 13 (B), it is possible to reduce peeling defects by forming the adhesive layer 99 so as not to overlap the outside of the separation region 25 and the outside of the separation region 94. It becomes.

For example, when an adhesive having low fluidity, an adhesive sheet, or the like is used for the adhesive layer 99, the adhesive layer 9 is used.
It is easy to form 9 in an island shape (FIG. 13 (A)).

Alternatively, a frame-shaped partition wall 96 may be formed, and the adhesive layer 99 may be filled inside the partition wall 96 and cured (FIG. 13 (B)).

When the partition wall 96 is used as a component of the display device, it is preferable to use a cured resin for the partition wall 96. At this time, it is preferable that the partition wall 96 does not overlap with the outside of the separation region 25 and the outside of the separation region 94.

When the partition wall 96 is not used as a component of the display device, it is preferable to use an uncured or semi-cured resin for the partition wall 96. At this time, the partition wall 96 may be overlapped with one or both of the outside of the separation region 25 and the outside of the separation region 94.

In this embodiment, an uncured resin is used for the partition wall 96, and the partition wall 96 does not overlap the outside of the separation region 25 and the outside of the separation region 94.

A method of forming a separation starting point in a configuration in which the adhesive layer 99 does not overlap the outside of the separation region 25 and the outside of the separation region 94 will be described. Below, an example of peeling off the manufacturing substrate 91 is shown.
The same method can be used when the manufacturing substrate 14 is peeled off.

In FIGS. 14A to 14E, the laser beam 66 when the fabrication substrate 91 and the release layer 93 are separated from each other.
The irradiation position of is described.

As shown in FIG. 14A, the starting point of separation can be formed by irradiating at least one region of the peeling layer 93 where the separation region 94 and the adhesive layer 99 overlap with the laser beam 66.

Since it is preferable that the force for separating the production substrate 91 and the release layer 93 is concentrated at the starting point of separation,
It is preferable to form a separation starting point near the end portion of the adhesive layer 99 rather than the central portion. In particular, among the vicinity of the end portion, it is preferable to form the starting point of separation in the vicinity of the corner portion as compared with the vicinity of the side portion.

14 (B) to 14 (E) show an example of the irradiation region 67 of the laser beam.

FIG. 14B shows a laser beam irradiation region 67 at one corner of the adhesive layer 99.

By irradiating the laser beam continuously or intermittently, a solid line or broken line starting point of peeling can be formed. In FIG. 14C, three laser beam irradiation regions 67 are shown at the corners of the adhesive layer 99. FIG. 16D shows an example in which the irradiation region 67 of the laser beam is in contact with one side of the adhesive layer 99 and extends along one side of the adhesive layer 99. As shown in FIG. 14 (E)
The irradiation region 67 of the laser beam may be located not only in the region where the adhesive layer 99 and the separation region 94 overlap, but also in the region where the partition wall 96 which is not in the cured state and the separation region 94 overlap.

After that, the fabrication substrate 91 and the release layer 93 can be separated. A part of the partition wall 96 may remain on the manufacturing substrate 14 side. The partition wall 96 may or may not be removed, and the process may proceed to the next step.

[Display device configuration example 2]
FIG. 15A is a top view of the display device 10B. FIG. 15B is an example of a cross-sectional view of the display unit 381 of the display device 10B and a cross-sectional view of the connection portion with the FPC 372.

The display device 10B can be manufactured by using the above-mentioned production method Example 5. Display device 10B
Can be held in a bent state, bent repeatedly, and the like.

The display device 10B has a substrate 22 and a substrate 29. The board 22 side is the display surface side of the display device 10B. The display device 10B has a display unit 381 and a drive circuit unit 382. FPC372 is attached to the display device 10B.

The conductive layer 86c and the FPC 372 are electrically connected via the connecting body 76 (FIG. 15).
(B)). The conductive layer 86c can be formed of the same material and the same process as the source and drain of the transistor.

As described above, when these display devices are manufactured, the titanium oxide layer 15 is irradiated with a laser beam to decompose the resin molecules contained in the release layer 23, and the separation region 25, which is a brittle region, is formed. The element forming region can be separated from the manufactured substrate 14 by forming and separating the release layer 23 from the separation region. Therefore, the region between the adhesive layer 28 and the release layer 23 (the interface between the adhesive layer 28 and the release layer 23) of the display device produced by applying the method for producing the display device of the present embodiment is provided. In LC / MS measurement generated by decomposition of the release layer 23 due to irradiation with laser light, there are a plurality of substances having a mass-to-charge ratio of 1000 or more and 1200 or less and not included in the material of the release layer. To do. The peeling layer 23 in which molecules having these molecular weights are present has good peeling performance while suppressing the occurrence of unintended peeling due to appropriate decomposition of the molecules. Therefore, a display device with a high yield should be manufactured. Can be done.

This embodiment can be appropriately combined with other embodiments. Further, in the present specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

(Embodiment 1)
In the present embodiment, a display device according to one aspect of the present invention and a method for manufacturing the display device will be described with reference to the drawings.

The display device of the present embodiment includes a first display element that reflects visible light and a second display element that emits visible light.

The display device of the present embodiment has a function of displaying an image by either one or both of the light reflected by the first display element and the light emitted by the second display element.

As the first display element, an element that reflects and displays external light can be used. Since such an element does not have a light source, it is possible to extremely reduce the power consumption during display.

As the first display element, a reflective liquid crystal element can be typically used. Or the first
As a display element of, a shutter type MEMS (Micro Electro Mech)
In addition to an organic system) element and an optical interference type MEMS element, an element to which a microcapsule method, an electrophoresis method, an electrowetting method, an electron powder fluid (registered trademark) method, or the like is applied can be used.

It is preferable to use a light emitting element as the second display element. Since the brightness and chromaticity of the light emitted by such a display element are not affected by external light, high color reproducibility (wide color gamut), high contrast, and vivid display should be performed. Can be done.

The second display element includes, for example, an OLED (Organic Light Emitting).
Diode), LED (Light Emitting Diode), QLED (Q)
A self-luminous light emitting device such as a unitum-dot Light Emitting Diode) can be used.

The display device of the present embodiment is a first mode in which an image is displayed using only the first display element.
It has a second mode for displaying an image using only a second display element, and a third mode for displaying an image using a first display element and a second display element, and these modes can be used. It can be used by switching automatically or manually.

In the first mode, an image is displayed using the first display element and external light. The first mode is an extremely low power consumption mode because it does not require a light source. For example, when external light is sufficiently incident on the display device (such as in a bright environment), the light reflected by the first display element can be used for display. For example, it is effective when the external light is sufficiently strong and the external light is white light or light in the vicinity thereof. The first mode is a mode suitable for displaying characters. In addition, since the first mode uses the light reflected from the outside light, it is possible to perform a display that is easy on the eyes.
It has the effect of reducing eye fatigue.

In the second mode, an image is displayed by utilizing the light emitted by the second display element. Therefore, it is extremely vivid (high contrast and high color reproducibility) regardless of the illuminance or the chromaticity of external light.
Can be displayed. For example, it is effective when the illuminance is extremely low, such as at night or in a dark room. In addition, when the surroundings are dark, the user may feel dazzling when the display is bright. In order to prevent this, it is preferable to display with reduced brightness in the second mode. As a result, in addition to suppressing glare, power consumption can also be reduced. The second mode is a mode suitable for displaying vivid images (still images and moving images) and the like.

In the third mode, the display is performed by using both the reflected light by the first display element and the light emission by the second display element. It is possible to reduce the power consumption as compared with the second mode while displaying more vividly than the first mode. For example, it is effective when the illuminance is relatively low, such as under indoor lighting, in the morning or evening time, or when the chromaticity of the outside light is not white. In addition, by using light that is a mixture of reflected light and light emission, it is possible to display an image that makes the person feel as if he / she is looking at a painting.

With such a configuration, it is possible to realize a highly visible and highly convenient display device or an all-weather display device regardless of the ambient brightness.

The display device of the present embodiment has a plurality of first pixels having a first display element and a plurality of second pixels having a second display element. It is preferable that the first pixel and the second pixel are arranged in a matrix, respectively.

The first pixel and the second pixel can each have one or more sub-pixels. For example, the pixel has a configuration having one subpixel (white (W), etc.), a configuration having three subpixels (red (R), green (G), and blue (B), or three colors, or Three colors of yellow (Y), cyan (C), and magenta (M), etc.) or a configuration having four sub-pixels (red (red (red ())
4 colors of R), green (G), blue (B), white (W), or red (R), green (G),
Blue (B), yellow (Y), etc.) can be applied.

The display device of the present embodiment can be configured to perform full-color display on both the first pixel and the second pixel. Alternatively, the display device of the present embodiment may be configured to perform black-and-white display or grayscale display on the first pixel and full-color display on the second pixel. Black-and-white display or grayscale display using the first pixel is suitable for displaying information that does not require color display, such as document information.

(Embodiment 2)
In this embodiment, CA that can be used for the transistor disclosed in one aspect of the present invention.
The configuration of C (Cloud-Aligned Complex) -OS will be described.

The CAC-OS is, for example, a composition of a material in which the elements constituting the metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or a size close thereto. In the following, in the metal oxide, one or more metal elements are unevenly distributed, and the region having the metal element is 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or a size in the vicinity thereof. The state of being mixed with is also called a mosaic shape or a patch shape.

The metal oxide preferably contains at least indium. In particular, it preferably contains indium and zinc. In addition to them, the element M (M is gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lantern, cerium, neodymium, hafnium. , Tantalum, tungsten, or gallium) may be included.

For example, the In-M-Zn oxide having a CAC-OS configuration is an indium oxide (hereinafter, InO _X1 (X1 is a real number larger than 0)) or an indium zinc oxide (hereinafter, In). _X2 Zn _Y2 O _Z2 (X2, Y2, and Z2 are real numbers larger than 0) and oxides of element M (hereinafter, MO _X3 (X3 is a real number larger than 0)),.
Or zinc oxide of element M (hereinafter, _MX4 Zn _Y4 O _Z4 (X4, Y4, and Z4 are 0).
Real number larger than). ), Etc., and the material is separated into a mosaic shape, and the mosaic-shaped InO _X1 or In _X2 Zn _Y2 O _Z2 is distributed in the film (hereinafter, also referred to as cloud shape).

That is, in the In-M-Zn oxide having the composition of CAC-OS, the region in which MO _X3 is the main component and the region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is the main component are mixed. It is a metal oxide. Therefore, the metal oxide may be described as a composite metal oxide. In the present specification, for example, the atomic number ratio of In to the element M in the first region is larger than the atomic number ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that of region 2.

The metal oxide having the structure of CAC-OS does not include a laminated structure of two or more kinds of films having different compositions. For example, it does not include a structure consisting of two layers, a film containing In as a main component and a film containing Ga as a main component.

Specifically, CAC-OS in In-Ga-Zn oxide (In-OS among CAC-OS)
Ga-Zn oxide may be particularly referred to as CAC-IGZO. ) Will be explained. I
CAC-OS in n-Ga-Zn oxide is InO _X1 or In _X2 Zn _Y2 O.
_Z2 and gallium oxide (hereinafter referred to as GaO _X5 (X5 is a real number larger than 0)),
Alternatively, gallium zinc oxide (hereinafter referred to as Ga _X6 Zn _Y6 O _Z6 (X6, Y6, and Z6 are real numbers larger than 0)) and the like are separated into a mosaic-like material, resulting in a mosaic-like InO. _X1 or In _X2 Zn _Y2 O _Z2 is a cloud-like metal oxide.

That is, the CAC-OS in the In-Ga-Zn oxide has a configuration in which a region containing GaO _X5 as a main component and a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component are mixed. It is a composite metal oxide having. In addition, the region in which GaO _X5 is the main component and In _{X
2 A} clear boundary may not be observable from the region where Zn _Y2 O _Z2 or InO _X1 is the main component.

In addition, IGZO is a common name, and may refer to one compound consisting of In, Ga, Zn, and O. As a typical example, InGaO ₃ (ZnO) _m1 (m1 is a natural number) or In ₍
Examples thereof include crystalline compounds represented by _{1 + x0)} Ga _(1-x0) O ₃ (ZnO) _m0 (-1 ≦ x0 ≦ 1, m0 is an arbitrary number).

The crystalline compound has a single crystal structure, a polycrystal structure, or a CAAC structure. In addition, it should be noted
The CAAC structure is a layered crystal structure in which a plurality of IGZO nanocrystals have a c-axis orientation and are connected without being oriented on the ab plane.

In the present specification and the like, CAC-IGZO refers to a metal oxide containing In, Ga, Zn, and O as having a plurality of regions containing Ga as a main component and a plurality of regions containing In as a main component.
It can be defined as a metal oxide in which each is randomly dispersed in a mosaic pattern.

The crystallinity of In-Ga-Zn oxide in CAC-OS can be evaluated by electron diffraction. For example, in the electron diffraction pattern image, a ring-shaped region with high brightness is observed. In addition, a plurality of spots may be observed in the ring-shaped region.

CAC-OS in In-Ga-Zn oxide has a structure different from that of the IGZO compound in which metal elements are uniformly distributed, and has properties different from those of the IGZO compound. That is, In-Ga
CAC-OS in −Zn oxide has a region in which GaO _{X5 and the} like are the main components and In _X2.
It has a structure in which Zn _Y2 O _Z2 or InO _X1 is separated from each other and the region containing each element is a mosaic.

Instead of gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lantern, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium When it is contained, CAC-OS has a region observed in the form of nanoparticles mainly containing the metal element and a region partially observed in the form of nanoparticles containing In as the main component. However, each of them is randomly dispersed in a mosaic pattern.

Here, the region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is the main component is GaO _X5.
This is a region with high conductivity as compared with the region where the main component is. That is, In _X2 Zn _Y
Conductivity is exhibited by the flow of carriers in the region where ₂ O _Z2 or InO _X1 is the main component. Therefore, a high field effect mobility (μ) can be realized by distributing the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as the main component in the metal oxide in a cloud shape.

On the other hand, the region in which GaO _X5 or the like is the main component is In _X2 Zn _Y2 O _Z2 or InO _X.
This is a region having high insulating properties as compared with the region in which ₁ is the main component. That is, since the region containing GaO _X5 or the like as the main component is distributed in the metal oxide, leakage current can be suppressed and good switching operation can be realized.

Therefore, when CAC-OS in In-Ga-Zn oxide is used for the semiconductor element, Ga
An insulating caused by such _{O X5, In X2 Zn Y2 O} Z2 or a conductive due to _{InO X1,,} by acting complementary, high on current _{(I on),} high field-effect mobility ( μ) and low off-current (I _off ) can be realized.

A semiconductor device using CAC-OS in In-Ga-Zn oxide has high reliability. Therefore, CAC-OS in In-Ga-Zn oxide is most suitable for various semiconductor devices such as displays.

This embodiment can be appropriately combined with other embodiments.

(Embodiment 3)
In the present embodiment, the display module and the electronic device of one aspect of the present invention will be described.

The display module 8000 shown in FIG. 16 has a touch panel 8004 connected to the FPC 8003, a display panel 8006 connected to the FPC 8005, a frame 8009, a printed circuit board 8010, and a battery 8011 between the upper cover 8001 and the lower cover 8002.
Have.

For example, a display device manufactured by using the peeling method of one aspect of the present invention can be displayed on the display panel 8006.
Can be used for. As a result, the display module can be manufactured with a high yield.

The upper cover 8001 and the lower cover 8002 include a touch panel 8004 and a display panel 8.
The shape and dimensions can be changed as appropriate according to the size of 006.

As the touch panel 8004, a resistive film type or capacitance type touch panel can be used by superimposing it on the display panel 8006. It is also possible to provide the display panel 8006 with a touch panel function without providing the touch panel 8004.

In addition to the protective function of the display panel 8006, the frame 8009 has a function as an electromagnetic shield for blocking electromagnetic waves generated by the operation of the printed circuit board 8010. Further, the frame 8009 may have a function as a heat radiating plate.

The printed circuit board 8010 has a power supply circuit, a signal processing circuit for outputting a video signal and a clock signal. The power source for supplying electric power to the power supply circuit may be an external commercial power source or a separately provided battery 8011. Battery 8011
It can be omitted when using a commercial power supply.

Further, the display module 8000 may be additionally provided with members such as a polarizing plate, a retardation plate, and a prism sheet.

According to one aspect of the present invention, an electronic device having a curved surface and high reliability can be manufactured. Further, according to one aspect of the present invention, a flexible and highly reliable electronic device can be manufactured.

Electronic devices include, for example, television devices, desktop or notebook personal computers, monitors for computers, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and acoustic devices. Examples include playback devices and large game machines such as pachinko machines.

Further, the display device of one aspect of the present invention can realize high visibility regardless of the intensity of external light. Therefore, it can be suitably used for portable electronic devices, wearable electronic devices (wearable devices), electronic book terminals, and the like.

The mobile information terminal 800 shown in FIGS. 17A and 17B has a housing 801 and a housing 802, and a display unit 8.
It has 03, a display unit 804, a hinge unit 805, and the like.

The housing 801 and the housing 802 are connected by a hinge portion 805. The mobile information terminal 800 is
From the folded state (FIG. 17 (A)), it can be unfolded as shown in FIG. 17 (B).

The display unit 803 and the display unit 80 are the display devices manufactured by using the peeling method of one aspect of the present invention.
It can be used for at least one of 4. As a result, a mobile information terminal can be manufactured with a high yield.

The display unit 803 and the display unit 804 can each display at least one of document information, a still image, a moving image, and the like. When displaying document information on the display unit, the mobile information terminal 800 can be used as an electronic book terminal.

Since the portable information terminal 800 can be folded, it is highly portable and has excellent versatility.

The housing 801 and the housing 802 may have a power button, an operation button, an external connection port, a speaker, a microphone, and the like.

The mobile information terminal 810 shown in FIG. 17C has a housing 811, a display unit 812, and an operation button 81.
3. It has an external connection port 814, a speaker 815, a microphone 816, a camera 817, and the like.

A display device manufactured by using the peeling method of one aspect of the present invention can be used for the display unit 812. As a result, a mobile information terminal can be manufactured with a high yield.

The mobile information terminal 810 includes a touch sensor on the display unit 812. All operations such as making a phone call or inputting characters can be performed by touching the display unit 812 with a finger or a stylus.

Further, by operating the operation button 813, the power can be turned on and off, and the type of the image displayed on the display unit 812 can be switched. For example, the mail composition screen can be switched to the main menu screen.

Further, by providing a detection device such as a gyro sensor or an acceleration sensor inside the mobile information terminal 810, the orientation (vertical or horizontal) of the mobile information terminal 810 is determined, and the orientation of the screen display of the display unit 812 can be determined. It can be switched automatically. Further, the orientation of the screen display can be switched by touching the display unit 812, operating the operation button 813, or performing voice input using the microphone 816.

The mobile information terminal 810 has one or more functions selected from, for example, a telephone, a notebook, an information browsing device, and the like. Specifically, it can be used as a smartphone. The personal digital assistant 810 can execute various applications such as mobile phone, e-mail, text viewing and creation, music playback, video playback, Internet communication, and games.

The camera 820 shown in FIG. 17D has a housing 821, a display unit 822, an operation button 823, a shutter button 824, and the like. A removable lens 826 is attached to the camera 820.

A display device manufactured by using the peeling method of one aspect of the present invention can be used for the display unit 822. As a result, the camera can be manufactured with a high yield.

Here, the camera 820 has a configuration in which the lens 826 can be removed from the housing 821 and replaced, but the lens 826 and the housing 821 may be integrated.

The camera 820 can capture a still image or a moving image by pressing the shutter button 824. Further, the display unit 822 has a function as a touch panel, and the display unit 82
It is also possible to take an image by touching 2.

The camera 820 can be separately equipped with a strobe device, a viewfinder, and the like. Alternatively, these may be incorporated in the housing 821.

18 (A) to 18 (E) are diagrams showing electronic devices. These electronic devices have a housing of 9000.
, Display 9001, speaker 9003, operation key 9005 (including power switch or operation switch), connection terminal 9006, sensor 9007 (force, displacement, position, speed, acceleration,
Function to measure angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared ray. Includes), microphone 9008 and the like.

A display device manufactured by using the peeling method of one aspect of the present invention can be suitably used for the display unit 9001. As a result, an electronic device can be manufactured with a high yield.

The electronic devices shown in FIGS. 18A to 18E can have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, etc., a function to control processing by various software (programs), Wireless communication function, function to connect to various computer networks using wireless communication function, function to transmit or receive various data using wireless communication function, read and display programs or data recorded on recording media It can have a function of displaying on a unit, and the like. The functions of the electronic devices shown in FIGS. 18A to 18E are not limited to these, and may have other functions.

FIG. 18A is a perspective view showing a wristwatch-type portable information terminal 9200, and FIG. 18B is a perspective view showing a wristwatch-type portable information terminal 9201.

The personal digital assistant 9200 shown in FIG. 18A can execute various applications such as mobile phone, e-mail, text viewing and creation, music playback, Internet communication, and computer games. Further, the display unit 9001 is provided with a curved display surface, and can display along the curved display surface. In addition, the personal digital assistant 9200 can execute short-range wireless communication standardized for communication. For example, by communicating with a headset capable of wireless communication, it is possible to make a hands-free call. Further, the mobile information terminal 9200 has a connection terminal 9006, and can directly exchange data with another information terminal via a connector. It is also possible to charge via the connection terminal 9006.
The charging operation may be performed by wireless power supply without going through the connection terminal 9006.

Unlike the mobile information terminal shown in FIG. 18A, the mobile information terminal 9201 shown in FIG. 18B does not have a curved display surface of the display unit 9001. Further, the outer shape of the display unit of the mobile information terminal 9201 is non-rectangular (circular in FIG. 18B).

18 (C) to 18 (E) are perspective views showing a foldable mobile information terminal 9202. Note that FIG. 32 (C) is a perspective view of the mobile information terminal 9202 deployed, and FIG. 18 (D) is shown in FIG.
Is a perspective view of a state in which the mobile information terminal 9202 is in the process of changing from one of the expanded state or the folded state to the other, and FIG. 18 (E) is a perspective view of the mobile information terminal 9202 in the folded state.

The mobile information terminal 9202 is excellent in portability in the folded state, and is excellent in display listability due to a wide seamless display area in the unfolded state. The display unit 9001 included in the mobile information terminal 9202 is supported by three housings 9000 connected by a hinge 9055.
By bending between the two housings 9000 via the hinge 9055, the mobile information terminal 9
The 202 can be reversibly transformed from the unfolded state to the folded state. For example, the portable information terminal 9202 can be bent with a radius of curvature of 1 mm or more and 150 mm or less.

This embodiment can be appropriately combined with other embodiments.

In this embodiment, a titanium oxide layer is formed on a glass substrate, then a polyimide thin film is formed on the titanium oxide layer, and then a peeling film is adhered to the polyimide and then peeled by irradiating a laser from the glass substrate side. The method of forming the layer will be described. As the glass substrate, a glass substrate having a thickness of about 0.7 mm was used. A titanium film was formed on the glass substrate by a sputtering method. When forming the titanium film, the process gas has a flow rate of 100 mL / min (100).
Argon gas (sccm) was used, the pressure was 0.3 Pa, the power was 8 kW, and the thickness of the titanium film was 5 nm. Titanium oxide was obtained by subsequently oxidizing the formed titanium layer. Oxidation conditions of the titanium thin film, a method of firing oxygen and 1 hour at 450 ° C. The substrate was formed of titanium on a glass under an atmosphere of nitrogen (sample 1), the titanium thin film surface of the methods of H _{2 O} plasma treatment I did two ways. An appropriate amount of a solution of soluble polyimide (product number: SO0100001 at Tochigi Plant) was added dropwise to the surface of the titanium oxide thin film formed by the two methods (Sample 2) on the obtained glass substrate, and spin-coated. A film was formed. After film formation, the substrate was fired at 400 ° C. for 1 hour, and after firing, a release film was adhered. As an adhesive method, an adhesive (manufactured by Nissin Resin Co., Ltd., product number: CEP-5) is linearly applied on polyimide, and PET
A film (manufactured by Panac Co., Ltd., product name: CT100 / Lumirror 125UF83) of 125 μm was placed and stretched with a laminator to bond the polyimide layer and the PET film which is a peeling film. Then, an excimer laser (wavelength: 308 nm) was irradiated from the glass substrate side so as to have an energy density of 440 (mJ / cm ² ). After the irradiation, the layer to be peeled off was peeled off by making a notch in the release film.

LC / MS analysis was performed on the peeled surface on the glass substrate side and the peeled surface on the peeled layer side of the obtained peeling film having the peeled layer and the glass substrate after peeling. The peeling film having the peeled layer to be analyzed and the glass substrate after peeling the peeled layer are cut out to an arbitrary size, and the surface on the peeling interface side of the glass substrate after peeling and the peeling interface side of the peeled layer The surface was rinsed three times with 15 drops of a solution of acetonitrile and chloroform in a volume ratio of 7: 3, and the obtained cleaning solution was used as a measurement sample. Acetonitrile and 1,1,1,3,3,3-hexafluoro-2-propanol were used in a volume ratio of 7 as the solvent used to wash off the peeled surface.
A solution mixed at a ratio of 3 to 3 was also used. As a reference, release film (PET \ CE)
Similarly, the surfaces of P05) and the glass substrate were washed away with the above-mentioned two kinds of mixed solvents to prepare a reference sample.

The sample and reference sample prepared as described above were subjected to LC / MS analysis.
LC / MS analysis uses LC (Liquid Chromatography) Separation by Waters Acqui
MS analysis (mass spectrometry) by ty UPLC by Waters Xevo G2 To
f MS was used. The column used for LC separation is Accuracy UPLC BEH.
C8 (2.1 × 100 mm 1.7 μm), column temperature was 40 ° C. As the mobile phase, mobile phase A was made of acetonitrile and mobile phase B was made of 0.1% formic acid aqueous solution. The injection volume of the sample was 5.0 μL.

For LC separation, a gradient method that changes the composition of the mobile phase is used, and 0 minutes to 1 after the start of measurement.
Up to minutes, mobile phase A: mobile phase B = 30: 70, then the composition is changed so that the ratio of mobile phase A to mobile phase B at 9 minutes is mobile phase A: mobile phase B = 95: 5. Was linearly gradientized and then held at the same rate for up to 15 minutes.

In MS analysis, electrospray ionization (ElectroSpray Ioni)
Ionization by zation (abbreviation: ESI), capillary voltage is 3.0107
The measurement was performed at 5 kV, the sample cone voltage was 30 V, and the detection was performed in the positive mode and the negative mode. The mass range to be measured is m / z = 100 to 1200.
And said.

PDA (photodiode array) obtained by LC / MS analysis performed as described above.
The chromatograph of the detector is shown in FIGS. 19A and 19B. Note that FIG. 19 (A) shows sample 1.
, FIG. 19 (B) is the result of sample 2. Area ratio (%) of peaks detected in FIG.
The detected mass-to-charge ratio (m / z) is summarized in Table 1. Since no ions were detected in the positive mode, only the mass-to-charge ratios detected in the negative mode are shown in Table 1.

In Table 1, the "PI surface after peeling" is the surface on the peeling interface side of the layer to be peeled, and the "diox surface after peeling" is the surface on the peeling interface side of the glass substrate.

As can be seen from Table 1, a plurality of molecular weights of 10 are seen from the polyimide side surface of the peeling interface of the peeled layer.
Compounds having a molecular weight of about 00 to 1800 were detected. On the other hand, almost no ions were detected from the surface of titanium oxide in the measurement range. Multiple compounds having a molecular weight of about 1000 to 1800 detected from the polyimide side surface of the peeling interface of the layer to be peeled generate heat when the titanium oxide layer absorbs the laser, and the polyimide decomposes with the heat generated by titanium oxide as a notch. It was generated.

Here, the soluble polyimide solution used (product number at Tochigi Plant: SO0100001)
) Will be described for LC / MS analysis of low molecular weight components. When the solution of soluble polyimide and chloroform were mixed so as to have a volume ratio of 1: 1, precipitation of polyimide was confirmed. The mixture was left to stand for 1 hour until the polyimide was precipitated, and the obtained supernatant and acetonitrile were diluted to a volume ratio of 10: 1 to prepare Comparative Sample 1.

Similarly, a sample prepared by using 1,1,1,3,3,3-hexafluoro-2-propanol (abbreviation: HFIP) instead of chloroform was used as Comparative Sample 2.

LC / MS analysis was performed on the two comparative samples prepared as described above. LC /
The apparatus and analysis conditions used for the MS analysis are the same as when the above-mentioned release layer surface was analyzed.

A chromatograph of a PDA (photodiode array) detector obtained by LC / MS analysis is shown in FIG. 20 (A) is the result of comparison sample 1, and (B) is the result of comparison sample 2. As can be seen from FIGS. 20A and 20B, nothing was detected from the PDA chromatograph. On the other hand, some ions were detected by the MS detector. Table 2 summarizes the detected mass-to-charge ratio and retention time. Table 2 shows only the mass-to-charge ratio detected in the negative mode because no ions were detected in the positive mode.

As can be seen from Table 2, a solution of soluble polyimide (manufactured by SOMAR Corporation, product name: SPI)
It was confirmed that XAREA spixeria (product number: GR series) contains several types of low molecular weight components that are soluble in chloroform and HFIP to the extent that they can be detected by MS.

Comparing this comparative sample with the peeled sample, it can be seen that in the peeled sample, components having a mass-to-charge ratio (m / z) of 1000 or more and 1200 or less, which are not detected in the comparative sample, are detected. It was confirmed that this component was not contained in the soluble polyimide solution but was generated in the peeling step.

FIG. 21 shows a cross-sectional TEM observation result after laminating a titanium oxide layer and a polyimide layer on a glass substrate and irradiating the glass substrate with an XeCl excimer laser having a wavelength of 308 nm so as to have an energy density of 360 mJ / cm ² . As shown in FIG. 21, at the interface between the titanium oxide layer and the polyimide layer, it was observed that the polyimide was decomposed and voids were formed due to the irradiation of titanium oxide with laser light to generate heat. Since such voids were not confirmed in the cross-sectional TEM observation before peeling, it is considered that these voids were formed by irradiation with laser light.

As described above, these decomposition products are generated by the heat generation of the titanium oxide layer due to the irradiation of the laser beam, so that the generated portion becomes embrittled and peeling occurs in the notch at the embrittled portion. In the peeling method of the present invention in which a brittle layer is formed due to a deteriorated product of polyimide, a peeling portion can be provided on the polyimide side of the interface between titanium oxide and polyimide when peeling is desired, so that the peeling is extremely excellent in the substrate manufacturing process. It can be said that it is a method. That is, in the process that should not be peeled off, the layer to be peeled off can be held on the substrate. Therefore, the substrate produced by using the peeling method of the present invention can obtain a highly reliable peeled layer at low cost and short tact time.

10A Display device 10B Display device 13 Adhesive layer 14 Fabrication substrate 15 Titanium oxide layer 21 Detachable layer 22 Substrate 23 Peeling layer 24 Resin layer 25 Separation region 28 Adhesive layer 29 Substrate 31 Insulation layer 32 Insulation layer 33 Insulation layer 34 Insulation layer 35 Insulation Layer 40 Transistor 41 Conductive layer 43a Conductive layer 43b Conductive layer 43c Conductive layer 44 Metal oxide layer 45 Conductive layer 49 Transistor 60 Light emitting element 61 Conductive layer 62 EL layer 63 Conductive layer 64 Cut 65 Instrument 66 Laser light 67 Irradiation area 74 Insulation layer 75 Protective layer 75a Substrate 75b Adhesive layer 76 Connection 80 Transistor 81 Conductive layer 82 Insulation layer 83 Metal oxide layer 84 Insulation layer 85 Conductive layer 86a Conductive layer 86b Conductive layer 86c Conductive layer 91 Fabrication board 92 Titanium oxide layer 93 Peeling layer 94 Separation area 95 Insulation layer 96 Partition 97 Colored layer 98 Light-shielding layer 99 Adhesive layer 372 FPC
381 Display unit 382 Drive circuit unit 800 Mobile information terminal 801 Housing 802 Housing 803 Display unit 804 Display unit 805 Hinge unit 810 Mobile information terminal 811 Housing 812 Display unit 813 Operation button 814 External connection port 815 Speaker 816 Microphone 817 Camera 820 Camera 821 Housing 822 Display unit 823 Operation button 824 Shutter button 826 Lens 8000 Display module 8001 Top cover 8002 Bottom cover 8003 FPC
8004 touch panel 8005 FPC
8006 Display panel 8009 Frame 8010 Printed circuit board 8011 Battery 9000 Housing 9001 Display 9003 Speaker 9005 Operation key 9006 Connection terminal 9007 Sensor 9008 Microphone 9055 Hing 9200 Mobile information terminal 9201 Mobile information terminal 9202 Mobile information terminal

Claims (1)

A substrate, a first resin layer formed in contact with the substrate, a second resin layer formed in contact with the first resin layer, and a second resin layer formed in contact with the second resin layer. Has one layer and
The second resin layer is composed mainly of polyimide resin.
When the first resin layer on the opposite side of the interface between the first resin layer and the second resin layer is measured by LC-MS at the interface between the first resin layer and the second resin layer. An element in which a substance having a mass-to-charge ratio of 1000 or more and 1200 or less in LC-MS measurement is detected in addition to the substance detected in.