JP2020088311A - Dicing machine - Google Patents
Dicing machine Download PDFInfo
- Publication number
- JP2020088311A JP2020088311A JP2018224662A JP2018224662A JP2020088311A JP 2020088311 A JP2020088311 A JP 2020088311A JP 2018224662 A JP2018224662 A JP 2018224662A JP 2018224662 A JP2018224662 A JP 2018224662A JP 2020088311 A JP2020088311 A JP 2020088311A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- frame
- supporting
- adhesive tape
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Confectionery (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
【課題】ダイシング装置と紫外線照射装置を必要とする加工を実施するに際し、装置の省スペース化を実現し、設備費を抑えることができるダイシング装置を提供する。【解決手段】本発明によれば、粘着テープＴを介してフレームＦに支持されたウエーハＷを個々のデバイスチップ４’に分割するダイシング装置１であって、ウエーハＷを支持するウエーハ支持テーブル１２と、ウエーハ支持テーブル１２の外周に配設されたフレームＦを支持するフレーム支持部１３とから構成されるチャックテーブル１０と、ウエーハ支持テーブル１２に支持されたウエーハＷに切削加工を施す切削手段２０と、を少なくとも備え、ウエーハ支持テーブル１２は、紫外線（ＵＶ）を照射してウエーハＷに対応する領域の粘着テープＴの粘着力を低減する紫外線照射手段６０を備えるダイシング装置１が提供される。【選択図】図３Kind Code: A1 A dicing apparatus is provided that can save the space of the apparatus and reduce equipment costs when carrying out processing that requires a dicing apparatus and an ultraviolet irradiation apparatus. Kind Code: A1 According to the present invention, there is provided a dicing apparatus for dividing a wafer W supported on a frame F via an adhesive tape T into individual device chips, and a wafer support table for supporting the wafer W. and a frame supporting portion 13 for supporting a frame F arranged on the outer periphery of the wafer supporting table 12, and a cutting means 20 for cutting the wafer W supported on the wafer supporting table 12. , and the wafer support table 12 is provided with an ultraviolet irradiation means 60 for reducing the adhesive force of the adhesive tape T in a region corresponding to the wafer W by irradiating ultraviolet rays (UV). [Selection drawing] Fig. 3
Description
本発明は、粘着テープを介してフレームに支持されたウエーハを個々のデバイスチップに分割するダイシング装置に関する。 The present invention relates to a dicing apparatus that divides a wafer supported by a frame via an adhesive tape into individual device chips.
ＩＣ、ＬＳＩ等の複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハは、ダイシング装置によって個々のデバイスチップに分割され携帯電話、パソコン等の電気機器に利用される（例えば、特許文献１を参照。）。 A wafer formed on the surface by dividing a plurality of devices such as IC and LSI by dividing lines is divided into individual device chips by a dicing device and used for electric equipment such as mobile phones and personal computers (for example, Patent Document 1). See 1.).
また、ウエーハは、個々のデバイスチップに分割される前にウエーハを収容する開口部を有するフレームの該開口部に位置付けられフレームと共に粘着テープが貼着されて一体に構成される。 Further, the wafer is positioned in the opening portion of the frame having the opening portion for accommodating the wafer before being divided into individual device chips, and the adhesive tape is adhered together with the frame to be integrally formed.
そして、ウエーハにダイシング加工が施され個々のデバイスチップに分割された後、ウエーハに対応する粘着テープの領域に紫外線が照射されて粘着力が低減される。その後、個々のデバイスチップは粘着テープからピックアップされて配線基板にボンディングされる。 Then, after the wafer is diced and divided into individual device chips, the region of the adhesive tape corresponding to the wafer is irradiated with ultraviolet rays to reduce the adhesive force. Thereafter, the individual device chips are picked up from the adhesive tape and bonded to the wiring board.
従来においては、ウエーハを個々のデバイスチップに分割するダイシング装置と、粘着テープに紫外線を照射する紫外線照射装置とを別個に備える必要があり、各装置を設置する設置スペースが必要になると共に、設備費が高額になるという問題がある。 Conventionally, it is necessary to separately provide a dicing device that divides the wafer into individual device chips and an ultraviolet irradiation device that irradiates the adhesive tape with ultraviolet rays, and an installation space for installing each device is required. There is a problem that the cost becomes high.
本発明は、上記事実に鑑みなされたものであり、その主たる技術課題は、ダイシング装置と紫外線照射を必要とする加工を実施するに際し、装置の省スペース化を実現し、設備費を抑えることができるダイシング装置を提供することにある。 The present invention has been made in view of the above facts, and its main technical problem is to achieve space saving of the device when performing processing that requires dicing device and ultraviolet irradiation, and to reduce equipment cost. An object of the present invention is to provide a dicing device that can do this.
上記主たる技術課題を解決するため、本発明によれば、粘着テープを介してフレームに支持されたウエーハを個々のデバイスチップに分割するダイシング装置であって、ウエーハを支持するウエーハ支持テーブルと、該ウエーハ支持テーブルの外周に配設されたフレームを支持するフレーム支持部とから構成されるチャックテーブルと、該ウエーハ支持テーブルに支持されたウエーハに切削加工を施す切削手段と、を少なくとも備え、該ウエーハ支持テーブルは、紫外線を照射してウエーハに対応する領域の粘着テープの粘着力を低減する紫外線照射手段を備えるダイシング装置が提供される。 In order to solve the main technical problems described above, according to the present invention, there is provided a dicing apparatus for dividing a wafer supported by a frame via an adhesive tape into individual device chips, and a wafer supporting table for supporting the wafer, The wafer support table is provided with at least a chuck table including a frame support portion that supports a frame disposed on the outer periphery of the wafer support table, and a cutting unit that performs a cutting process on the wafer supported by the wafer support table. The supporting table is provided with a dicing device provided with ultraviolet irradiation means for irradiating ultraviolet rays to reduce the adhesive force of the adhesive tape in the region corresponding to the wafer.
該ウエーハ支持テーブルは、ウエーハを支持する表面部を有し紫外線を透過する支持基板を備え、該紫外線照射手段は、該支持基板の裏面側に配設される紫外線照射源を備えるようにすることが好ましい。また、該ダイシング装置は、該チャックテーブルに支持されたウエーハ、粘着テープ、及びフレームに洗浄水を噴射して洗浄する洗浄手段を備えることが好ましい。 The wafer support table includes a support substrate having a surface portion for supporting the wafer and transmitting ultraviolet rays, and the ultraviolet ray irradiation means includes an ultraviolet ray irradiation source disposed on the back surface side of the support substrate. Is preferred. Further, it is preferable that the dicing apparatus includes a cleaning unit that sprays cleaning water onto the wafer supported by the chuck table, the adhesive tape, and the frame to clean the wafer.
本発明のダイシング装置は、粘着テープを介してフレームに支持されたウエーハを個々のデバイスチップに分割するダイシング装置であって、ウエーハを支持するウエーハ支持テーブルと、該ウエーハ支持テーブルの外周に配設されたフレームを支持するフレーム支持部とから構成されるチャックテーブルと、該ウエーハ支持テーブルに支持されたウエーハに切削加工を施す切削手段と、を少なくとも備え、該ウエーハ支持テーブルは、紫外線を照射してウエーハに対応する領域の粘着テープの粘着力を低減する紫外線照射手段を備えるように構成されていることから、ダイシング装置とは別個の紫外線照射装置を配設する必要がなくなり、装置の省スペース化を実現し、設備費を抑えることができる。特に、ウエーハ支持テーブルに対し、ウエーハを支持する表面部を配設し、紫外線を透過する支持基板を備えさせ、該支持基板の裏面側に紫外線照射源を備えるようにすることで、より効果的に装置の省スペース化を実現することができる。 The dicing apparatus of the present invention is a dicing apparatus that divides a wafer supported by a frame via an adhesive tape into individual device chips, the wafer supporting table supporting the wafer, and the wafer supporting table provided on the outer periphery of the wafer supporting table. A chuck table composed of a frame supporting part for supporting the frame, and a cutting means for cutting the wafer supported by the wafer supporting table, and the wafer supporting table irradiates ultraviolet rays. Since it is configured to have an ultraviolet irradiation means for reducing the adhesive force of the adhesive tape in the area corresponding to the wafer, it is not necessary to provide an ultraviolet irradiation device separate from the dicing device, and the space saving of the device can be achieved. Can be realized and equipment costs can be reduced. In particular, it is more effective to dispose a surface portion supporting the wafer on the wafer supporting table, provide a supporting substrate that transmits ultraviolet rays, and provide an ultraviolet irradiation source on the back surface side of the supporting substrate. In addition, space saving of the device can be realized.
以下、本発明に基づいて構成されたダイシング装置に係る実施形態について添付図面を参照しながら、詳細に説明する。 Hereinafter, embodiments of a dicing apparatus configured according to the present invention will be described in detail with reference to the accompanying drawings.
図１に、本実施形態に係るダイシング装置１の全体斜視図を示し、図２に、図１に示すダイシング装置１の要部の斜視図を示す。 FIG. 1 shows an overall perspective view of the dicing apparatus 1 according to the present embodiment, and FIG. 2 shows a perspective view of a main part of the dicing apparatus 1 shown in FIG.
ダイシング装置１は、被加工物（図２に示すウエーハＷ）を載置して保持するチャックテーブル１０を備えると共に、個々の粘着テープＴを介してフレームＦに支持されたウエーハＷを個々のデバイスチップに分割する切削手段２０を備える。 The dicing apparatus 1 includes a chuck table 10 on which a workpiece (wafer W shown in FIG. 2) is mounted and held, and the wafer W supported by the frame F via individual adhesive tapes T is used as an individual device. A cutting means 20 for dividing into chips is provided.
図１に示すように、チャックテーブル１０は、矢印Ｘで示すＸ軸方向において進退し、チャックテーブル１０に対してウエーハＷを載置して保持させたり、切削加工後のウエーハＷをチャックテーブル１０から取り出して搬出したりする脱着領域Ａと、チャックテーブル１０に保持されたウエーハＷに切削手段２０により切削加工を施す加工領域Ｂとに位置付けられる。ダイシング装置１の全体は、ハウジング部材２で覆われ、脱着領域Ａ、及び加工領域Ｂの側方部には開口部が設けられる。図１では省略されているが、それぞれの脱着領域Ａ、及び加工領域Ｂの該開口部には、開閉扉が設けられ、加工中は、ハウジング部材２の内部が閉空間となる。また、チャックテーブル１０は、後述するチャックテーブル１０を移動させるための移動手段をカバーする蛇腹状カバー部材３０を備える。ハウジング部材２における脱着領域Ａの上方には、作業者がダイシング装置１における種々の作業に関連する情報を確認したり、作業の指示を行ったりするタッチパネルＭが配設される。 As shown in FIG. 1, the chuck table 10 moves back and forth in the X-axis direction indicated by the arrow X, and the wafer W is placed and held on the chuck table 10 or the wafer W after cutting is held on the chuck table 10. It is positioned in a desorption area A that is taken out of the apparatus and carried out, and a processing area B in which the wafer W held by the chuck table 10 is cut by the cutting means 20. The entire dicing device 1 is covered with the housing member 2, and openings are provided at the sides of the attachment/detachment area A and the processing area B. Although not shown in FIG. 1, an opening/closing door is provided at the opening of each of the attachment/detachment area A and the processing area B, and the inside of the housing member 2 becomes a closed space during processing. The chuck table 10 also includes a bellows-shaped cover member 30 that covers a moving unit for moving the chuck table 10 described later. Above the attachment/detachment area A of the housing member 2, a touch panel M is provided on which a worker can check information related to various works in the dicing device 1 and can give a work instruction.
ハウジング部材２における脱着領域Ａと加工領域Ｂとの境界の上方には、矢印Ｙで示すＹ軸方向に延びる洗浄手段４０が配設される。また、ハウジング部材２における脱着領域Ａに臨む開口部の上方には、Ｘ軸方向に延びるエアブロー手段５０が配設される。洗浄手段４０は、下方に向けてチャックテーブル１０のＸ軸方向における全域に跨るように洗浄水を高圧で吹付ける機能、又は、洗浄水を高圧エアーで噴射する２流体機能を有し、チャックテーブル１０が加工領域Ｂから、脱着領域Ａに移動する際に、チャックテーブル１０上に支持されたウエーハＷ、粘着テープＴ、及びフレームＦに洗浄水を供給する。また、エアブロー手段５０からは、下方に向けて少なくともフレームＦの外径に及ぶ領域に対し高圧の空気が噴射されるように構成されており、作業者が脱着領域Ａに位置付けられたチャックテーブル１０上からフレームＦと共にウエーハＷを取り出す際に、開口部の上方から高圧の空気を吹付けて水分を飛ばすことができる。 Above the boundary between the attachment/detachment area A and the processing area B in the housing member 2, a cleaning means 40 extending in the Y-axis direction shown by the arrow Y is arranged. Further, an air blow means 50 extending in the X-axis direction is arranged above the opening of the housing member 2 which faces the attachment/detachment area A. The cleaning means 40 has a function of spraying cleaning water at a high pressure downwardly over the entire area of the chuck table 10 in the X-axis direction, or a two-fluid function of injecting cleaning water with high-pressure air. When the processing area 10 moves from the processing area B to the desorption area A, cleaning water is supplied to the wafer W, the adhesive tape T, and the frame F supported on the chuck table 10. Further, the air blow means 50 is configured to inject high-pressure air downward to at least an area extending to the outer diameter of the frame F, and the chuck table 10 in which the worker is positioned in the attachment/detachment area A is arranged. When taking out the wafer W together with the frame F from above, high-pressure air can be blown from above the opening to remove water.
図２を参照しながら、図１に示すダイシング装置１のハウジング部材２を除いた要部についてさらに詳細に説明する。 With reference to FIG. 2, a main part of the dicing device 1 shown in FIG. 1 excluding the housing member 2 will be described in more detail.
チャックテーブル１０は、図に示す粘着テープＴを介してフレームＦに支持されたウエーハＷを吸引保持するものであり、板状のカバー部材１１と、カバー部材１１の中央に配設される略円柱状のウエーハ支持テーブル１２と、ウエーハ支持テーブル１２の外周に均等に配置されウエーハＷを保持するフレームＦを固定するためのフレーム支持部１３とを備える。 The chuck table 10 sucks and holds the wafer W supported by the frame F via the adhesive tape T shown in the figure, and has a plate-shaped cover member 11 and a substantially circular shape arranged in the center of the cover member 11. A columnar wafer support table 12 and a frame support portion 13 for evenly disposing the wafer F on the outer circumference of the wafer support table 12 for fixing a frame F holding a wafer W are provided.
チャックテーブル１０をＸ軸方向における脱着領域Ａと、加工領域Ｂとの間で移動させる移動手段は、支柱１４を介してウエーハ支持テーブル１２を固定する台座部１５と、基台１ａ上に配設された一対の案内レール１７と、案内レール１７間に配設されるボールねじ１８と、ボールねじ１８を回転駆動するモータ１６と、により実現される。台座部１５は、上記した案内レール１７に沿って摺動可能に構成されており、台座部１５の底部下面に適宜形成された図示しない係合手段によりボールねじ１８と係合させられている。モータ１６によりボールねじ１８を正回転、又は逆回転させることにより、台座部１５と共にチャックテーブル１０がＸ軸方向において移動させられる。案内レール１７と台座部１５との間には、図示しない位置検出手段が配設されており、該位置検出手段、及びモータ１６は、図示しない制御手段に接続されチャックテーブル１０を所望の位置に正確に位置付けることが可能になっている。 The moving means for moving the chuck table 10 between the attachment/detachment area A and the processing area B in the X-axis direction is provided on the pedestal portion 15 for fixing the wafer support table 12 via the columns 14 and on the base 1a. It is realized by a pair of guide rails 17 formed as described above, a ball screw 18 arranged between the guide rails 17, and a motor 16 that rotationally drives the ball screw 18. The pedestal portion 15 is configured to be slidable along the guide rail 17 described above, and is engaged with the ball screw 18 by an engaging means (not shown) that is appropriately formed on the bottom surface of the pedestal portion 15. By rotating the ball screw 18 forward or backward by the motor 16, the pedestal 15 and the chuck table 10 are moved in the X-axis direction. Position detecting means (not shown) is arranged between the guide rail 17 and the pedestal portion 15. The position detecting means and the motor 16 are connected to control means (not shown) to move the chuck table 10 to a desired position. It can be positioned accurately.
次に、切削手段２０について説明する。切削手段２０は、回転スピンドル２２１の先端部に固定された切削ブレード２１を備えており、切削ブレード２１は、回転スピンドル２２１を介して、スピンドルユニット２２に支持されている。スピンドルユニット２２の後端側には、スピンドルモータ２３が配設され、スピンドルモータ２３により、回転スピンドル２２１を介して切削ブレード２１が高速で回転駆動させられる。スピンドルユニット２２は、スライド部材２４におけるスライド板２５に配設されており、スライド板２５は、スライド部材２４に配設されたＺ軸方向移動モータ２６によってスライド部材２４に沿って矢印Ｚで示すＺ軸方向に精密に進退させられる。 Next, the cutting means 20 will be described. The cutting means 20 includes a cutting blade 21 fixed to the tip of the rotary spindle 221, and the cutting blade 21 is supported by the spindle unit 22 via the rotary spindle 221. A spindle motor 23 is arranged on the rear end side of the spindle unit 22, and the spindle motor 23 drives the cutting blade 21 to rotate at high speed via a rotary spindle 221. The spindle unit 22 is arranged on a slide plate 25 of the slide member 24, and the slide plate 25 is moved by a Z-axis direction movement motor 26 arranged on the slide member 24 along the slide member 24 as indicated by an arrow Z. It can be accurately moved back and forth in the axial direction.
スライド部材２４は、基台１ａ上に起立させた壁部１ｂの手前側の側面に設けられたスライド移動手段によって、水平方向（Ｙ軸方向）に対してスライド自在に移動させられる。このスライド移動手段は、壁部１ｂの側面の水平方向に平行で配設された一対の案内レール２７と、一対の案内レール２７の間に水平に配設されたボールねじ２８と、ボールねじ２８を正回転、又は逆回転方向に回転駆動するＹ軸方向移動モータ２９とで構成されている。そして、スライド部材２４は、一対の案内レール２７にスライド自在に懸架されると共に、スライド部材２４の背面側においてボールねじ２８と適宜の係合手段により係合される。このように構成されたスライド移動手段によれば、Ｙ軸方向移動モータ２９を正回転方向、又は逆回転方向に回転させることにより、スライド部材２４をＹ軸方向において精密に進退させる。 The slide member 24 is slidably moved in the horizontal direction (Y-axis direction) by a slide moving unit provided on the front side surface of the wall portion 1b standing on the base 1a. The slide moving means includes a pair of guide rails 27 arranged in parallel to the horizontal direction of the side surface of the wall portion 1b, a ball screw 28 horizontally arranged between the pair of guide rails 27, and a ball screw 28. And a Y-axis direction moving motor 29 that drives the motor to rotate in the forward or reverse direction. The slide member 24 is suspended slidably on the pair of guide rails 27, and is engaged with the ball screw 28 on the rear surface side of the slide member 24 by an appropriate engaging means. According to the slide moving unit thus configured, the slide member 24 is advanced and retracted precisely in the Y-axis direction by rotating the Y-axis direction moving motor 29 in the forward rotation direction or the reverse rotation direction.
図２に示すように、チャックテーブル１０のカバー部材１１の中央に配設されるウエーハ支持テーブル１２は、円形状の支持基板１２２と、支持基板１２２を囲繞する枠部１２１とからなる表面部１２０を備えている。さらに、支持基板１２２を表面部１２０から取り外した状態を示す図３から理解されるように、枠部１２１に囲まれた領域であって、支持基板１２２の裏面側に、紫外線を上方に向けて照射する紫外線照射手段６０が配設される。紫外線照射手段６０は、枠部１２１の底部に配設される紫外線照射基板６２を備え、紫外線照射基板６２上の格子状に区画された複数の領域に紫外線照射源（紫外線ＬＥＤ）６４を備えている。また、図４に示すように、紫外線照射基板６２の紫外線照射源６４が配設されない領域には、上下（表裏）に貫通する連通孔６６が配設される。各紫外線照射源６４には、枠部１２１の下面から接続される電源供給回路７０を介して電源７２が接続される。 As shown in FIG. 2, the wafer support table 12 disposed in the center of the cover member 11 of the chuck table 10 has a surface portion 120 including a circular support substrate 122 and a frame portion 121 surrounding the support substrate 122. Is equipped with. Further, as can be understood from FIG. 3 showing a state where the support substrate 122 is removed from the front surface portion 120, ultraviolet rays are directed upward toward a back surface side of the support substrate 122 in a region surrounded by the frame portion 121. An ultraviolet irradiation means 60 for irradiating is provided. The ultraviolet ray irradiating means 60 includes an ultraviolet ray irradiating substrate 62 arranged at the bottom of the frame 121, and an ultraviolet ray irradiating source (ultraviolet LED) 64 in a plurality of areas on the ultraviolet ray irradiating substrate 62 divided into a grid pattern. There is. Further, as shown in FIG. 4, a communication hole 66 penetrating vertically (front and back) is provided in a region of the ultraviolet irradiation substrate 62 where the ultraviolet irradiation source 64 is not provided. A power supply 72 is connected to each ultraviolet irradiation source 64 via a power supply circuit 70 connected from the lower surface of the frame 121.
支持基板１２２は、透明な通気性を有する板状部材、例えば、ポーラスガラス（多孔質硝子）から構成される。図３及び図４に示すように、支持基板１２２は、上記した枠部１２１内の紫外線照射手段６０上に載置され、支持基板１２２の上面は、枠部１２１の上面と一致させられる。ウエーハ支持テーブル１２内を通る吸引通路１４１には、吸引通路１４１に負圧を生じさせる吸引手段（図示は省略する。）が接続され、紫外線照射基板６２の連通孔６６と通気性を有する支持基板１２２を介して、支持基板１２２の上面に保持されるウエーハＷに粘着テープＴを介して負圧を作用させる。なお、支持基板１２２は、必ずしも全体で通気性を有するポーラスガラスである必要はなく、平坦な略円形状の単なるガラス板とすることもできる。その場合は、支持基板１２２の外周部と枠部１２１との境界に上下に連通する間隙を複数箇所に形成し、該間隙を介して支持基板１２２上に負圧を作用させればよい。 The support substrate 122 is made of a transparent plate member having air permeability, for example, porous glass (porous glass). As shown in FIGS. 3 and 4, the support substrate 122 is placed on the ultraviolet irradiation means 60 in the frame 121 described above, and the upper surface of the support substrate 122 is aligned with the upper surface of the frame 121. A suction means (not shown) for generating a negative pressure in the suction passage 141 is connected to the suction passage 141 passing through the wafer support table 12, and is connected to the communication hole 66 of the ultraviolet irradiation substrate 62 and a support substrate having air permeability. A negative pressure is applied to the wafer W held on the upper surface of the support substrate 122 via the adhesive tape T. The support substrate 122 does not necessarily need to be porous glass having air permeability as a whole, and may be a simple flat glass plate having a substantially circular shape. In that case, a gap that communicates vertically is formed at a boundary between the outer peripheral portion of the support substrate 122 and the frame portion 121, and a negative pressure may be applied to the support substrate 122 through the gaps.
本実施形態のダイシング装置１は、概ね上記したように構成されており、上記したダイシング装置１を使用してウエーハＷを個々のデバイスチップに分割する手順について以下に説明する。 The dicing apparatus 1 of the present embodiment is generally configured as described above, and a procedure of dividing the wafer W into individual device chips using the above dicing apparatus 1 will be described below.
ダイシング装置１を使用してウエーハＷを切削するに際し、図５に示すように、粘着テープＴを介して、開口部を有する環状のフレームＦに支持されたウエーハＷを用意する。ウエーハＷは、複数のデバイス４が分割予定ライン６を介して区画され表面Ｗａに形成されている。粘着テープＴは、紫外線が照射されることにより粘着力が低下するテープであり、例えば、ポリ塩化ビニル（ＰＶＣ）からなるシート状基材の貼着面（ウエーハＷが貼着される面）に紫外線を照射することにより硬化して粘着力が低下するアクリル系ベース樹脂等からなるＵＶ硬化糊が塗布されたものを使用することができる。なお、紫外線が照射されることにより粘着力が低下するテープは周知であり、紫外線を照射することにより粘着力が低下するテープであれば、上記した粘着テープＴ以外のテープを使用することを妨げない。 When the wafer W is cut using the dicing device 1, as shown in FIG. 5, a wafer W supported by an annular frame F having an opening is prepared via an adhesive tape T. The wafer W is formed by dividing a plurality of devices 4 via planned dividing lines 6 on the front surface Wa. The adhesive tape T is a tape whose adhesive force is reduced by being irradiated with ultraviolet rays, and is, for example, on the sticking surface (the surface to which the wafer W is stuck) of the sheet-shaped substrate made of polyvinyl chloride (PVC). It is possible to use a product to which a UV-curing paste made of an acrylic base resin or the like, which is cured by irradiation with ultraviolet rays and whose adhesive strength is reduced, is applied. Note that a tape whose adhesive strength is reduced by being irradiated with ultraviolet rays is well known, and a tape whose adhesive strength is reduced by being irradiated with ultraviolet rays prevents the use of a tape other than the above-mentioned adhesive tape T. Absent.
上記したように、粘着テープＴを介してフレームＦに支持されたウエーハＷを用意したならば、脱着領域Ａに位置付けられたチャックテーブル１０のウエーハ支持テーブル１２の表面部１２０上に粘着テープＴ側を下にして載置して吸引保持し、ウエーハＷを支持するフレームＦをフレーム支持部１３で固定する。チャックテーブル１０にウエーハＷを保持したならば、チャックテーブル１０を加工領域Ｂ側に移動する。 As described above, when the wafer W supported by the frame F via the adhesive tape T is prepared, the adhesive tape T side is provided on the surface portion 120 of the wafer support table 12 of the chuck table 10 positioned in the desorption area A. Is placed downward and is suction-held, and the frame F supporting the wafer W is fixed by the frame support portion 13. After holding the wafer W on the chuck table 10, the chuck table 10 is moved to the processing area B side.
図６に示すように切削手段２０のスピンドルユニット２２は、回転スピンドル２２１の先端部に固定され外周に切り刃を有する切削ブレード２１と、切削ブレード２１を保護するブレードカバー２２３とを備えている。切削ブレード２１は、例えば、電鋳砥石であり、直径が５０ｍｍ、厚みが３０μｍに設定されている。切削ブレード２１は、スピンドルモータ２３の駆動により、例えば２０，０００ｒｐｍの速度で回転される。ブレードカバー２２３には、切削ブレード２１に隣接する位置に切削水供給手段２２４が配設されており、切削水を切削ブレード２１による切削位置に向けて供給する。切削ブレード２１によって切削加工を実施する際には、予め図示しないアライメント手段を用いて、切削ブレード２１と、チャックテーブル１０に保持されたウエーハＷの加工位置との位置合わせ（アライメント）を行う。該アライメント手段には、少なくとも図示しない照明手段、及び撮像手段が備えられ、ウエーハＷの表面Ｗａの分割予定ライン６を、ウエーハＷの表面Ｗａ側から撮像、検出することが可能に構成されている。 As shown in FIG. 6, the spindle unit 22 of the cutting means 20 includes a cutting blade 21 fixed to the tip of the rotary spindle 221 and having a cutting edge on the outer circumference, and a blade cover 223 that protects the cutting blade 21. The cutting blade 21 is, for example, an electroformed grindstone, and has a diameter of 50 mm and a thickness of 30 μm. The cutting blade 21 is driven by the spindle motor 23 to rotate at a speed of 20,000 rpm, for example. Cutting water supply means 224 is arranged in the blade cover 223 at a position adjacent to the cutting blade 21, and supplies the cutting water toward the cutting position by the cutting blade 21. When performing the cutting process by the cutting blade 21, alignment (alignment) between the cutting blade 21 and the processing position of the wafer W held on the chuck table 10 is performed by using an alignment means (not shown) in advance. The alignment means is provided with at least an illuminating means and an image capturing means, which are not shown, and is configured so that the planned dividing line 6 on the front surface Wa of the wafer W can be captured and detected from the front surface Wa side of the wafer W. ..
該アライメント手段によるアライメントを実施したならば、回転スピンドル２２１と共に高速回転させられる切削ブレード２１を、ウエーハＷ上の所定の加工開始位置に位置付けて、切削ブレード２１の下端位置を、ウエーハＷを完全に切削し、粘着テープＴに僅かに達する高さ位置まで下降させて切り込ませ、ウエーハＷを保持したチャックテーブル１０を切削ブレード２１に対して矢印Ｘで示すＸ軸方向（加工送り方向）に移動させる。この時の加工送り速度は、例えば、５０ｍｍ／秒に設定される。これにより、図６に示すように、ウエーハＷの分割予定ライン６に対応する領域を切削して切削溝１００を形成する。そして、上記した移動手段によって、チャックテーブル１０を、Ｘ軸方向、及びＸ軸方向と直交する方向に適宜移動させながら、ウエーハＷの所定方向における全ての分割予定ライン６に対し、上記した切削ブレード２１により切削溝１００を形成する。チャックテーブル１０の所定方向における全ての分割予定ライン６に対応して切削溝１００を形成したならば、ウエーハ支持テーブル１２を９０度回転させて、上記した所定方向に直交する方向において、分割予定ライン６に対応する領域に上記と同様にして切削溝１００を形成する。これにより、ウエーハＷの全ての分割予定ライン６に対応する領域に切削溝１００が形成される。その結果、図７に示すように、ウエーハＷの表面Ｗａに形成されたデバイス４が、個々のデバイスチップ４’に分割される。 After performing the alignment by the alignment means, the cutting blade 21 that is rotated at high speed together with the rotary spindle 221 is positioned at a predetermined processing start position on the wafer W, and the lower end position of the cutting blade 21 is completely moved to the wafer W. The chuck table 10 that has been cut and lowered to a height position where it slightly reaches the adhesive tape T is cut, and the chuck table 10 holding the wafer W is moved in the X-axis direction (processing feed direction) indicated by the arrow X with respect to the cutting blade 21. Let The machining feed rate at this time is set to, for example, 50 mm/sec. Thereby, as shown in FIG. 6, the region corresponding to the planned dividing line 6 of the wafer W is cut to form the cutting groove 100. Then, while appropriately moving the chuck table 10 in the X-axis direction and the direction orthogonal to the X-axis direction by the above-mentioned moving means, the above-mentioned cutting blade for all the planned dividing lines 6 in the predetermined direction of the wafer W. The cutting groove 100 is formed by 21. When the cutting grooves 100 are formed corresponding to all the planned dividing lines 6 in the predetermined direction of the chuck table 10, the wafer support table 12 is rotated by 90 degrees and the planned dividing lines are formed in the direction orthogonal to the predetermined direction. The cutting groove 100 is formed in the region corresponding to 6 in the same manner as above. As a result, the cutting grooves 100 are formed in the regions corresponding to all the planned dividing lines 6 of the wafer W. As a result, as shown in FIG. 7, the device 4 formed on the front surface Wa of the wafer W is divided into individual device chips 4'.
上記したように切削手段２０によって切削溝１００を形成する切削加工が施されたならば、図８に示すように、洗浄手段４０から下方に向けて洗浄水４２を高圧で吐出させながら、チャックテーブル１０をＸ軸方向、すなわち、加工領域Ｂ側から脱着領域Ａに向けて移動させる。これにより、ウエーハＷ、粘着テープＴ、及びフレームＦを洗浄して、切削加工時に飛び散った図示しない切削屑を除去する。なお、洗浄水４２を洗浄手段４０から吐出する際には、洗浄効果を向上させるべく、洗浄水４２を高圧エアーで噴射する２流体噴射とすることが好ましい。 When the cutting process for forming the cutting groove 100 is performed by the cutting means 20 as described above, as shown in FIG. 8, the chuck table is discharged while the cleaning water 42 is discharged downward from the cleaning means 40. 10 is moved in the X-axis direction, that is, from the processing area B side toward the desorption area A. As a result, the wafer W, the adhesive tape T, and the frame F are washed to remove cutting chips (not shown) scattered during cutting. When the cleaning water 42 is discharged from the cleaning means 40, it is preferable that the cleaning water 42 is a two-fluid jet in which high-pressure air is sprayed in order to improve the cleaning effect.
上記したように、ウエーハＷ、粘着テープＴ、及びフレームＦを洗浄したならば、チャックテーブル１０を脱着位置Ａに位置付けて停止させる。脱着位置Ａにてチャックテーブル１０を停止させたならば、ウエーハ支持テーブル１２及びウエーハＷの一部拡大断面図として示す図９から理解されるように、紫外線照射源６４を所定時間（例えば、３０秒程度）作動させる。紫外線照射源６４から照射される図中ＵＶで示す紫外線は、ポーラスガラスからなる支持基板１２２を透過して、ウエーハＷに対応する領域の粘着テープＴに照射され、粘着テープＴの粘着力を低減する。すなわち、粘着テープＴに紫外線が照射されると、粘着テープＴの表面（ウエーハＷが貼着されている面）に被覆されたＵＶ硬化糊が硬化して、粘着力が低下する。なお、この際の粘着力の低下は、粘着テープＴ上の個々のデバイスチップ４’がある程度保持される程度に低下するものであり、完全に粘着力を消失するほどの低下ではない。また、当該紫外線の照射は、上記した洗浄手段４０による洗浄の直後、すなわち、ウエーハＷ、テープＴ上に洗浄水４２が残存した状態で実施される。一般に、紫外線を照射することにより粘着力が低下するＵＶ硬化糊は、酸素を含む空気内で紫外線を照射すると粘着力の低下が小さい。よって、上記したように、洗浄水４２をウエーハＷ、粘着テープＴ上に残したまま、粘着テープＴの下面側から紫外線を照射することで、粘着テープＴが空気中の酸素から隔離され、効率よく粘着力を低下させることができる。 After cleaning the wafer W, the adhesive tape T, and the frame F as described above, the chuck table 10 is positioned at the attachment/detachment position A and stopped. If the chuck table 10 is stopped at the attachment/detachment position A, as will be understood from FIG. 9 showing a partially enlarged sectional view of the wafer support table 12 and the wafer W, the ultraviolet irradiation source 64 is kept for a predetermined time (for example, 30 Operate for about a second). Ultraviolet rays indicated by UV in the figure, which are emitted from the ultraviolet ray irradiation source 64, pass through the support substrate 122 made of porous glass and are applied to the adhesive tape T in the region corresponding to the wafer W, so that the adhesive force of the adhesive tape T is reduced. To do. That is, when the pressure-sensitive adhesive tape T is irradiated with ultraviolet rays, the UV-curing glue coated on the surface of the pressure-sensitive adhesive tape T (the surface on which the wafer W is adhered) is cured and the pressure-sensitive adhesive force is reduced. The decrease in the adhesive force at this time is such that the individual device chips 4'on the adhesive tape T are held to some extent, and is not such a decrease that the adhesive force is completely lost. The irradiation of the ultraviolet rays is performed immediately after the cleaning by the cleaning means 40, that is, in a state where the cleaning water 42 remains on the wafer W and the tape T. In general, the UV-curable glue, the adhesive strength of which is reduced by irradiating ultraviolet rays, has a small decrease in adhesive force when it is irradiated with ultraviolet rays in air containing oxygen. Therefore, as described above, by irradiating ultraviolet rays from the lower surface side of the adhesive tape T with the cleaning water 42 left on the wafer W and the adhesive tape T, the adhesive tape T is isolated from oxygen in the air, and the efficiency is improved. The adhesive strength can be lowered well.
上記したように、ウエーハＷを支持する粘着テープＴの下面側から紫外線を照射して粘着テープＴの粘着力を低下させたならば、図１０に示すように、脱着領域Ａにあるチャックテーブル１０に保持されたフレームＦを作業員の手（Ｈで示す）で把持し、脱着領域Ａに対応して設けられた開口部から、フレームＦと共にウエーハＷを取り出す。この際、エアブロー手段５０の下面から高圧の空気５２を噴射して、ウエーハＷ、粘着テープＴ、フレームＦ上に残存する洗浄水４２を吹き飛ばし、水分が除去された乾燥状態とする。なお、図１０では、フレームＦを取り出す作業を作業員の手作業で実施した例を示したが、必ずしも手作業によって取り出すことに限定されず、吸着手段を備えたアーム等による自動搬出装置を用いても良い。上記したようにして脱着領域Ａから搬出されたウエーハＷは、次工程（例えば、ピックアップ工程、ボンディング工程等。）に搬送されるか、又は、ウエーハＷをフレームＦと共に収容する図示しない収容カセットに搬送され収容される。 As described above, when the adhesive force of the adhesive tape T is lowered by irradiating the adhesive tape T with ultraviolet rays from the lower surface side of the adhesive tape T supporting the wafer W, as shown in FIG. The frame F held at is grasped by the hand of the worker (shown by H), and the wafer W is taken out together with the frame F from the opening provided corresponding to the attachment/detachment area A. At this time, high-pressure air 52 is jetted from the lower surface of the air blow means 50 to blow away the cleaning water 42 remaining on the wafer W, the adhesive tape T, and the frame F, and a dry state in which water is removed is obtained. Although FIG. 10 shows an example in which the work of taking out the frame F is carried out manually by a worker, it is not necessarily limited to the case where the work is taken out manually, and an automatic carrying-out device such as an arm equipped with a suction means is used. May be. The wafer W carried out from the desorption area A as described above is carried to the next step (for example, a pickup step, a bonding step, etc.), or a wafer cassette (not shown) that houses the wafer W together with the frame F. Transported and housed.
上記したように、本実施形態のダイシング装置１によれば、チャックテーブル１０を構成するウエーハ支持テーブル１２に対し、紫外線を照射してウエーハＷに対応する領域の粘着テープＴの粘着力を低減する紫外線照射手段６０を備えるようにした。これにより、ダイシング装置１とは別個の紫外線照射装置を配設する必要がなくなり、装置の省スペース化を実現し、設備費を抑えることができる。特に、ウエーハ支持テーブル１２に対し、ウエーハＷを支持し、紫外線を透過する支持基板１２２を備え、支持基板１２２の裏面側に紫外線照射源６４を備えるようにすることで、より効果的に装置の省スペース化を実現する。 As described above, according to the dicing apparatus 1 of the present embodiment, the wafer supporting table 12 forming the chuck table 10 is irradiated with ultraviolet rays to reduce the adhesive force of the adhesive tape T in the region corresponding to the wafer W. The ultraviolet irradiation means 60 was provided. This eliminates the need for disposing an ultraviolet irradiation device separate from the dicing device 1, realizes space saving of the device, and can reduce equipment costs. In particular, by providing the wafer supporting table 12 with the supporting substrate 122 that supports the wafer W and transmitting ultraviolet rays, and by providing the ultraviolet irradiation source 64 on the back surface side of the supporting substrate 122, the apparatus of the present invention can be more effectively used. Realize space saving.
１：ダイシング装置
１ａ：基台
１ｂ：壁部
２：ハウジング部材
１０：チャックテーブル
１１：カバー部材
１２：ウエーハ支持テーブル
１２０：表面部
１２１：枠部
１２２：支持基板
１３：フレーム支持部
１４：支柱
１６：モータ
１８：ボールねじ
２０：切削手段
２１：切削ブレード
２２：スピンドルユニット
２２１：回転スピンドル
２３：スピンドルモータ
２４：スライド部材
２５：スライド板
２６：Ｚ軸方向移動モータ
２７：案内レール
２８：ボールねじ
２９：Ｙ軸方向移動モータ
３０：蛇腹状カバー部材
４０：洗浄手段
４２：洗浄水
５０：エアブロー手段
５２：高圧の空気
６０：紫外線照射手段
６２：紫外線照射基板
６４：紫外線照射源
６６：連通孔
７０：電源供給回路
７２：電源
Ａ：脱着領域
Ｂ：加工領域
Ｆ：フレーム
Ｔ：粘着テープ
1: Dicing apparatus 1a: Base 1b: Wall part 2: Housing member 10: Chuck table 11: Cover member 12: Wafer support table 120: Surface part 121: Frame part 122: Support substrate 13: Frame support part 14: Support 16 : Motor 18: Ball screw 20: Cutting means 21: Cutting blade 22: Spindle unit 221: Rotating spindle 23: Spindle motor 24: Slide member 25: Slide plate 26: Z axis direction moving motor 27: Guide rail 28: Ball screw 29 : Y-axis direction moving motor 30: Bellows-shaped cover member 40: Cleaning means 42: Cleaning water 50: Air blow means 52: High pressure air 60: Ultraviolet irradiation means 62: Ultraviolet irradiation substrate 64: Ultraviolet irradiation source 66: Communication hole 70: Power supply circuit 72: Power supply A: Desorption area B: Processing area F: Frame T: Adhesive tape
Claims (3)
ウエーハを支持するウエーハ支持テーブルと、該ウエーハ支持テーブルの外周に配設されたフレームを支持するフレーム支持部とから構成されるチャックテーブルと、
該ウエーハ支持テーブルに支持されたウエーハに切削加工を施す切削手段と、
を少なくとも備え、
該ウエーハ支持テーブルは、紫外線を照射してウエーハに対応する領域の粘着テープの粘着力を低減する紫外線照射手段を備えるダイシング装置。 A dicing device for dividing a wafer supported by a frame via an adhesive tape into individual device chips,
A chuck table composed of a wafer support table for supporting the wafer, and a frame support section for supporting a frame arranged on the outer periphery of the wafer support table,
Cutting means for cutting the wafer supported by the wafer support table,
At least
The wafer supporting table is a dicing device provided with ultraviolet irradiation means for irradiating ultraviolet rays to reduce the adhesive force of the adhesive tape in the area corresponding to the wafer.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018224662A JP7242268B2 (en) | 2018-11-30 | 2018-11-30 | Dicing machine |
| CN201911125388.7A CN111261504B (en) | 2018-11-30 | 2019-11-18 | Cutting device |
| SG10201910880QA SG10201910880QA (en) | 2018-11-30 | 2019-11-19 | Dicing apparatus |
| TW108142877A TWI805870B (en) | 2018-11-30 | 2019-11-26 | cutting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018224662A JP7242268B2 (en) | 2018-11-30 | 2018-11-30 | Dicing machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2020088311A true JP2020088311A (en) | 2020-06-04 |
| JP7242268B2 JP7242268B2 (en) | 2023-03-20 |
Family
ID=70908968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018224662A Active JP7242268B2 (en) | 2018-11-30 | 2018-11-30 | Dicing machine |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7242268B2 (en) |
| CN (1) | CN111261504B (en) |
| SG (1) | SG10201910880QA (en) |
| TW (1) | TWI805870B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112078036A (en) * | 2020-07-08 | 2020-12-15 | 大同新成新材料股份有限公司 | Cutting equipment for processing semiconductor graphite round crystal and cutting method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57135738U (en) * | 1981-02-19 | 1982-08-24 | ||
| JP2002141392A (en) * | 2000-11-06 | 2002-05-17 | Mitsubishi Electric Corp | Pickup method and equipment for semiconductor chip and die bonding equipment provided therewith |
| JP2008071892A (en) * | 2006-09-13 | 2008-03-27 | Disco Abrasive Syst Ltd | Method for manufacturing device for lamination |
| JP2015119029A (en) * | 2013-12-18 | 2015-06-25 | 株式会社ディスコ | Processing method of package substrate |
| JP2018074082A (en) * | 2016-11-02 | 2018-05-10 | 株式会社ディスコ | Wafer processing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004160483A (en) * | 2002-11-12 | 2004-06-10 | Disco Abrasive Syst Ltd | Laser processing method and laser processing apparatus |
| JP6486176B2 (en) * | 2015-04-15 | 2019-03-20 | 株式会社ディスコ | Workpiece cutting method |
| JP2018160577A (en) * | 2017-03-23 | 2018-10-11 | 株式会社ディスコ | Processing method |
-
2018
- 2018-11-30 JP JP2018224662A patent/JP7242268B2/en active Active
-
2019
- 2019-11-18 CN CN201911125388.7A patent/CN111261504B/en active Active
- 2019-11-19 SG SG10201910880QA patent/SG10201910880QA/en unknown
- 2019-11-26 TW TW108142877A patent/TWI805870B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57135738U (en) * | 1981-02-19 | 1982-08-24 | ||
| JP2002141392A (en) * | 2000-11-06 | 2002-05-17 | Mitsubishi Electric Corp | Pickup method and equipment for semiconductor chip and die bonding equipment provided therewith |
| JP2008071892A (en) * | 2006-09-13 | 2008-03-27 | Disco Abrasive Syst Ltd | Method for manufacturing device for lamination |
| JP2015119029A (en) * | 2013-12-18 | 2015-06-25 | 株式会社ディスコ | Processing method of package substrate |
| JP2018074082A (en) * | 2016-11-02 | 2018-05-10 | 株式会社ディスコ | Wafer processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7242268B2 (en) | 2023-03-20 |
| SG10201910880QA (en) | 2020-06-29 |
| TWI805870B (en) | 2023-06-21 |
| CN111261504B (en) | 2024-09-24 |
| CN111261504A (en) | 2020-06-09 |
| TW202021724A (en) | 2020-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5436917B2 (en) | Laser processing equipment | |
| JP6208956B2 (en) | Annular convex removing device | |
| US20070238264A1 (en) | Method and apparatus for supporting wafer | |
| JP5580066B2 (en) | Cutting equipment | |
| KR102251263B1 (en) | Grinding apparatus, method for attaching protective tape and protective tape | |
| JP2012151275A (en) | Resin peeling device and grinding device | |
| KR102084269B1 (en) | Laser machining apparatus and method for coating protection film | |
| JP2011224642A (en) | Protective material and ablation processing method | |
| JP2010021397A (en) | Method of cleaning wafer | |
| JP5993729B2 (en) | Package substrate division method | |
| JP2020096035A (en) | Cutting device | |
| JP5965815B2 (en) | Cutting equipment | |
| JP2020088311A (en) | Dicing machine | |
| JP2016119370A (en) | Wafer processing method | |
| JP5637769B2 (en) | Laser processing equipment | |
| JP2009130315A (en) | Wafer cutting method | |
| JP2009018368A (en) | Processing equipment | |
| TWI789518B (en) | Processing device | |
| JP2021034647A (en) | Protective film coating device and laser processing apparatus equipped with protective film coating device | |
| JP2010272639A (en) | Grinding equipment | |
| CN115570461A (en) | Method for processing laminated wafer | |
| JP5784298B2 (en) | Processing method and processing apparatus | |
| JP7002400B2 (en) | Cleaning equipment | |
| JP2020088334A (en) | Tape applying device | |
| JP2016207820A (en) | Wafer processing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210921 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220930 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221004 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221130 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20221130 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230214 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230308 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7242268 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |